6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and Bipolar Transistors These devices have the
high input impedance of a MOSFET and the low on-state con-
duction loss of a Bipolar Transistor The much lower on-state
voltage drop varies only moderately between 25oC and
150oC. By Harris Corporation