Korean memory maker SK Hynix has successfully developed the world’s first 6Gb LPDDR3 chip. The new 20nm chips should end up in high-capacity modules used in next generation mobile devices.

At the moment Samsung is building 3GB LPDDR3 modules and they are starting to show up in some of its products. However, Samsung’s 3GB modules use six 20nm-class 4Gb chips, so 3GB modules based on SK Hynix 6Gb chips could get there with just four chips, ending up somewhat smaller and cheaper.

The new SK Hynix chip is rated at 1,866 Mbps and it can handle a maximum of 7.4GB/s in single channel mode. In dual channel mode the chip can hit 14.8GB/s. The chips are already sampling to potential customers.

Samsung is also working on 6Gb LPDDR3 chips that should end up in its 3GB modules and its high-end mobile products.

Samsung has started producing 4Gb low-power DDR3 chips using its 20nm manufacturing process. The new mobile DRAM is said to deliver comparable performance to standard DRAM used in mainstream PCs.

The new chips can sustain transfer speeds of up to 2,133 megabits per second, more than double the performance of LPDDR2 chips, which maxed out at 800Mbps. Compared to existing 30nm-class LPDDR3, the new chips offer 30 percent more performance with a 20 percent saving in power consumption.

Using the new chips OEMs will be able to cram 2GB of RAM in a single 0.8mm high package, Samsung said.