Contrary to ordinary solids, which are normally known to harden by compression, the compressibility of SiO2 (silica) glass has a maximum at about 2–4 GPa and its mechanical strength shows a minimum around 10 GPa. At this pressure, the compression of silica glass undergoes a change... (Read more)

The rate of spectral shift with applied biaxial stress [piezospectroscopic (PS) coefficient] was determined for the electron-stimulated F+ luminescence emitted from the c plane of sapphire (-Al2O3) as =1.18±0.03 nm/GPa. The PS dependence could be... (Read more)

The strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy electron diffraction, transmission electron microscopy, and high resolution... (Read more)

A microscopic procedure has been proposed for evaluating the stress dependence of the (room-temperature) cathodoluminescence (CL) excitonic band emitted from the (0001) crystallographic plane of GaN in a field-emission-gun scanning electron microscope. The room-temperature near-band-gap emission... (Read more)

We have reported depth and in-plane profiling of strain, Ge composition, and defects in strained-Si/Si1xGex/Si heterostructures using micro-Raman imaging. Raman profiling in the depth direction was carried out with a depth resolution of ~15 nm using a... (Read more)

X-ray topographic images of several dozens of diamonds have been recorded before and after their use as anvils in a diamond anvil high pressure cell. The aim of this study is to better understand and prevent the breakage of diamond anvils when they are used in contact with a helium sample. Indeed,... (Read more)

Photoluminescence (PL) spectra of single-crystal ZnO bulk under hydrostatic pressure are studied using the diamond-anvil-cell technique at room temperature. The PL spectrum of ZnO single crystal taken at atmospheric pressure was dominated by a strong near-band-edge exciton emission. The emission... (Read more)

High-resolution Laplace deep-level spectroscopy combined with the uniaxial stress technique has been used to study stress-energy piezospectroscopic tensor components of the platinum-dihydrogen complex in silicon. The effect of stress on the defect has been observed either as the stress-induced... (Read more)

We demonstrate that compressive uniaxial stress modifies the electronic structure of bond-centered muonium (MuBC0" align="middle">) in Si. The stress was applied along the 100 direction of the sample and results in a significant change in the hyperfine parameters of... (Read more)

Process-induced defects are a serious issue for modern sub-micron Si LSIs. To characterize such defects, two different techniques are useful: electrically detected magnetic resonance (EDMR) and transmission electron microscope (TEM), which can detect small (point) and extended defects, respectively. We applied EDMR and TEM to the issue of defect-induced leakage currents in dynamic-random-access memory (DRAM) cells. For our DRAM samples (a 0.25- μm-rule series), although TEM showed no extended defects, EDMR successfully detected two types of point defects: V2+O x (Si divacancy-oxygen complexes) and larger Si vacancies (at least larger than V6). We confirmed that these defects are the source of DRAM leakage currents. The observed defects were formed by ion implantation processes, but were more thermally stable than those in bulk Si crystals. The origins of this enhanced stability are attributed to the presence of oxygen atoms and a strong mechanical strain in LSIs. To clarify the origin of the complicated strain in LSI structures, we can directly measure the local-strain distribution in DRAM samples by means of convergent-beam electron diffraction (CBED) using TEM, which provides us with a valuable hint for understanding the formation mechanism of process-induced defects. (Read more)

Dislocation loops consisting of long and straight segments of 60 and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with... (Read more)

The B-H complex in Si can be aligned by stress and reorients with an activation energy of roughly 0.2 eV. We combine new measurements of the reorientation kinetics of the B-H complex made by the stress-induced dichroism technique with previous internal friction results to show that the reorientation... (Read more)

A total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)

A bistable interstitial-carbonsubstitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon molecule... (Read more)

The motion of hydrogen in the B-H complex in silicon has been studied. An applied stress is used to produce a preferential alignment of the B-H complex at temperatures sufficiently high for the H to move within the complex (above ∼60 K). This alignment of the complexes is detected by comparing the... (Read more)

Optical detection of magnetic resonance is reported for the 0.97-eV luminescence in neutron-irradiated silicon. The resonance is of an excited triplet (S=1) state of the defect, which is not the radiative state, known to be a singlet (S=0). The spectrum is unusual in that it is characteristic of a... (Read more)

The Si-P6 spectrum shows an intrinsic tetragonal symmetry with the C2 axis along ?100? and distortion forces the principal axes of the g tensor to be displaced in the {100} plane. The g tensor previously identified by Jung and Newell was found to be due to the motionally averaged state... (Read more)

The stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)

An electron-paramagnetic-resonance (EPR) study of irradiated, p-type silicon doped with carbon enriched with 13C has revealed that the Si-G11 spectrum possesses a 13C hyperfine structure. Owing to the complexity and lack of resolution in the observed spectrum, we found it... (Read more)

The excited states of the antimony, phosphorus, and arsenic impurities in silicon have been investigated by subjecting samples to a uniaxial stress and observing the change in the electron spin resonance spectrum. The experiments were performed at 1.25K and ?9000 Mc/sec on silicon samples subjected... (Read more)