As early as 1948, Shockley and Pearson1 showed that the conductivity of an evaporated germanium film could be modulated by means of an electric field applied normal to the surface. One surprising result of this work was that only about 10% of the charge induced by the field contributed to the conductivity. The reason for this discrepancy was explained by J. Bardeen as being due to the p...
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Semipermanent changes in the semiconductor surface potential occur in insulator-covered semiconductors when external fields are applied for long times, particularly at elevated temperatures. An attempt to explain these changes in terms of the charging and discharging of interface states leads to conclusions that disagree with many of the experimental facts. Specifically, the semipermanent effects ...
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Measurements are reported on the stability of planar, npn silicon transistors with and without a phosphosilicate glass layer over the SiO2 passivation layer. The phosphosilicate layer forms during the emitter diffusion from a P2O5 source, and the data show that, to insure stability, it must not be removed in subsequent processing steps. The units tested were of con...
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New technologies for deposition of thin glass films on silicon substrates have generated interest in the resulting glass-silicon interface potentials and the interface stability under conditions of bias and temperature that might be experienced in device operation. Experiments are described which show accumulation of space-charge layers at glass-silicon interfaces under combined conditions of elec...
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Electric fields have been applied to the surface over a planar silicon junction by means of a metallic control-ring electrode on the oxide surface. Capacitance measurements have indicated that a large, positive, immobile charge is present at or near the interface between the silicon dioxide and the silicon. An improvement in breakdown voltage occurs when the control ring is biased negatively, prod...
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A study has been made of the effect of chemical additives and of annealing and electrical biasing procedures upon the state of charge of silica films grown on silicon. A model, proposed to account for the observations, is based on the assumption that phosphorus, aluminum, and boron, when present, substitute for Si in SiO2. The resulting species may be represented as PO2+...
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The field effect surface-channel conductance and transconductance of both p-type and n-type Si inversion layers were measured as a function of external field. In the small signal region, the channel conductance was found to vary logarithmically with the transverse field. The results are interpreted in terms of reduction of carrier mobility that is due to surface scattering. A model which consists ...
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Studies on insulated-gate field effect devices fabricated on both n- and p-type Si have shown the existence of inversion layers on p-type surfaces and of accumulation layers on n-type surfaces. The degree of inversion or accumulation was characterized by measuring the total series capacity of the SiO2 gate and the underlying Si as a function of an applied dc potential. The initial surfa...
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The effect of processing variables on the surface conduction properties of passivated silicon junction devices has been studied. Insulated gate field-effect transistors fabricated in p-type silicon were used as an experimental tool. Varying the metal used as the gate electrode is shown to strongly influence the surface conductivity of the field-effect device. The effects of heat treatments in vari...
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In the range of fields used, it seems well established that trapping does not play a major role in these n-p-n field effect devices. This range was extensive enough to indicate that there was no high density of states in the gap from 0.3 eV below the conduction band edge to 0.125 eV below the conduction band edge. Hence, in this range for samples so prepared, the transconductance may be used to st...
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The effect on the velocity of sound corresponding to the “Keyes effect,” for nonzero frequency and finite wavelength, is calculated by means of the electron Boltzmann equation. The result may be expressed as an effective electronic contribution to the elastic constant; the deviation, χdK0 of δK from the Keyes electronic contribution to the elastic ...
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The paper presents a solution to the elasticity problem where the discontinuity is in the displacement component parallel to the plane area inside the transversely isotropic medium. The work previously performed on discontinuity problems is also discussed.
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The operation of transformer read-only stores is explained and the main methods of construction described. The optimum turns ratio of the transformers is calculated. It is shown how a transformer can produce an output current even though the energised word line is not threaded through it. The value of this zero current depends on the information pattern and is found to be greatest with one of two ...
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The composition of the gas phase is calculated for various temperatures, pressures, and chlorine-to-hydrogen ratios for the two-phase system consisting of solid silicon in equilibrium with the gas phase. It is shown that in the range of variables most frequently used for vapor growth of silicon, the principal species under equilibrium conditions are H2, HCl, SiHCl3, and SiCl View full abstract»

An arbitrarily large network of bistable tunnel diode switching circuits is analyzed for stability. One condition derived indicates that increasing the total “fan” of each circuit might tend to make the whole network unstable. This condition is independent of the tunnel-diode characteristic. Another condition is also derived which depends on this characteristic but does not involve t...
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The optical interaction of lasers attracts widespread interest for a number of reasons, a prominent one being the possibility that logic or memory systems using optically coupled elements may some day be realized. The quenching of one laser by the coherent light of another has been observed for GaAs injection lasers1 and for neodymium glass lasers.2 When the coherent output o...
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Aims & Scope

The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems.

The following IBM journal articles are freely available for all users to view: