Abstract

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure dB and associated gain dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.