Abstract

Ultrafast progressive breakdown has been observed in a metal gate metal-oxide-semiconductor field effect transistor (MOSFET) compared to a polycrystalline silicon gate MOSFET. Physical analysis by transmission electron microscopy and electrical characterization shows that the ultrafast progressive breakdown is likely to be associated with a metal-like filament formation of the breakdown path. It has been observed that the metal-like filament of the breakdown path is detrimental to the metal gate MOSFET progressive breakdown lifetime.