1 Tera byte SSD using 3D NAND chips

The multistorey building-like vertically stacked semiconductor-wafers of flash-memory-cells inside a few square mm floor area is now the trend in NAND flash memory. The three-dimensional vertical integration helps in achieving more memory per chip without going for deeper nodes of semiconductor fabrication.

Toshiba, Micron and Samsung are leading in the area of 3-D Memory fabrication which not only covers Flash memory but also DRAM.

Samsung has announced solid state drive (SSD) with a capacity of 1 TB by using 3D vertical NAND flash memory chips. The new Samsung 850 PRO, unveiled at the 2014 Samsung SSD Global Summit in Seoul are expected to available globally across 53 markets from this month.

When you look at the performance of this SSD, it features sequential read performance up to 550 megabytes per second (MB/s), with write performance of up to 520MB/s. Random read performance is up to 100,000 input/output operations-per-second (IOPS), with write speeds of up to 90,000 IOPS.

Samsung has also added Dynamic Thermal Guard feature in these devices to prevent potential data loss from overheating.