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To compare the characteristics and risk factors for surgical site infections (SSIs) after total hip arthroplasty (THA) and total knee arthroplasty (TKA) in a nationwide survey, using shared case detection and recording systems.

From 2006 to 2009, all patients undergoing THA and TKA in KONIS were enrolled.

Results.

SSI occurred in 161 (2.35%) of 6,848 cases (3,422 THAs and 3,426 TKAs). Pooled mean SSI rates were 1.69% and 2.82% for THA and TKA, respectively. Of the cases we examined, 42 (26%) were superficial-incisional SSIs and 119 (74%) were “severe” SSIs; of the latter, 24 (15%) were deep-incisional SSIs and 95 (59%) were organ/space SSIs. In multivariate analysis, a duration of preoperative hospital stay of greater than 3 days was a risk factor for total SSI after both THA and TKA. Diabetes mellitus, revision surgery, prolonged duration of surgery (above the 75th percentile), and the need for surgery due to trauma were independent risk factors for total and severe SSI after THA, while male sex and an operating room without artificial ventilation were independent risk factors for total and severe SSI after TKA. A large volume of surgeries (more than 10 procedures per month) protected against total and severe SSI, but only in patients who underwent TKA.

Conclusions.

Risk factors for SSI after arthroplasty differ according to the site of the arthroplasty. Therefore, clinicians should take into account the site of arthroplasty in the analysis of SSI and the development of strategies for reducing SSI.

To evaluate the risk factors for surgical site infection (SSI) after gastric surgery in patients in Korea.

Design.

A nationwide prospective multicenter study.

Setting.

Twenty university-affiliated hospitals in Korea.

Methods.

The Korean Nosocomial Infections Surveillance System (KONIS), a Web-based system, was developed. Patients in 20 Korean hospitals from 2007 to 2009 were prospectively monitored for SSI for up to 30 days after gastric surgery. Demographic data, hospital characteristics, and potential perioperative risk factors were collected and analyzed, using multivariate logistic regression models.

The growth of ZnO film on (0001) sapphire substrates was studied using the high density helicon wave oxygen plasma (>1011/cm2) assisted evaporation process. The addition of Ar into oxygen plasma (Ar/O2=1/2) enhanced the production of excited atomic oxygen (O*). The effect of a grounded grid installed at the exit of the plasma source on the crystallinity and optical properties of film is discussed. The full width at half maximum (FWHM) of θ rocking curve for (0002) plane is 0.53° under grid installation while 0.63° without the grid, indicating slightly improved crystallinity when adopting a grounded grid. The AFM image for the film deposited with grid installation shows a smoother surface morphology than in the case of no grid. PL spectra for the film deposited with the aid of a grid show a strong near-band edge emission at 3.36 eV at 10K, but those without a grid show prominent deep-level emissions. The deep level emission is attributed to the impurities and native defects in the film. The optical properties were greatly improved by a grounded grid, which effectively eliminated the ionic species and selectively extracted the excited neutrals.

The epitaxial layers of AIN and GaN were grown on Si and Sapphire substrate at a relatively low temperature of around 500 °C using the process of reactive ion beam assisted deposition. The optimum ion beam energy for epitaxial growth of AIN and GaN films was found to be about 50 eV. Characterization of the epitaxial layers was carried out by GID (Grazing-Incidence x-ray Diffraction) and high resolution TEM observation. The orientational relations between epitaxial layer and substrate were determined through these analysis. Very thin amorphous layers were observed at the interfaces of bom AIN and GaN films grown on Si(111) substrate, whereas the films grown on Sapphire substrate has no amorphous layer. The amorphous layer may act as a buffer layer enabling the growth of the epitaxial layers of AIN and GaN by relaxing the misfit strain in the early growing stage.

Ferromagnetic Cu-doped GaN film was grown on a GaN-buffered sapphire (0001) substrate by a hybrid physical-chemical-vapor-deposition method (HPCVD). The GaCuN film (Cu: 3.6 at.%) has a highly c-axis-oriented hexagonal wurtzite crystal structure, which is similar to GaN buffer but without any secondary phases such as metallic Cu, CuxNy, and CuxGay compounds. Two weak near-band edge (NBE) emissions at 3.38 eV and donor-acceptor-pair (DAP) transition at 3.2 eV with a typical strong broad yellow emission were observed in photoluminescence spectra for GaN buffer. In contrast, the yellow emission was completely quenched in GaCuN film because Ga vacancies causing the observed yellow emission in undoped GaN were substituted by Cu atoms. In addition, GaCuN film exhibits a blue shift of NBE emission, which could be explained with the +2 oxidation state of Cu ions, replacing +3 Ga ions resulting in band gap increment. The valance sate of Cu in GaCuN film was also confirmed by x-ray photoelectron spectroscopy (XPS) analysis. The GaCuN film shows ferromagnetic ordering and possesses a residual magnetization of 0.12 emu/cm3 and a coercive field of 264 Oe at room temperature. The unpaired spins in Cu2+ ions (d9) are most likely to be responsible for the observed ferromagnetism in GaCuN.

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