Abstract

The- paper presents a case study on the technological optimization of GaAs MESFETs by means of a. two-dimensional physical DC and small-signal simulator (MESS). Two examples are discussed, the first concerning the dose and recess optimization of an analog device, the second, the recess optimization of a MESFET series or parallel switch.

Abstract

The- paper presents a case study on the technological optimization of GaAs MESFETs by means of a. two-dimensional physical DC and small-signal simulator (MESS). Two examples are discussed, the first concerning the dose and recess optimization of an analog device, the second, the recess optimization of a MESFET series or parallel switch.