Students Conference on Engineering and Systems (SCES),16-18 March 2012, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, India

Abstract:

Dynamic CMOS gates are widely exploited in highperformance designs because of their speed. However, they suffer from high noise sensitivity. The main reason for this is the subthreshold
leakage current flowing through the evaluation network. This problem becomes more and more severe with continuous scaling of the technology. A new circuit technique for increasing the noise tolerance of dynamic CMOS gates is designed. A
comparison with previously reported schemes is presented. Simulations proved that, when 90 nm CMOS technology is used to realize wide fan-in gates, the proposed design technique can achieve the highest level of noise robustness.