We report on the comparative studies of photoluminescence (PL) properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the growth. Both samples exhibit strong midinfrared (MIR) emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.

We present the Stark energy sublevels of Nd3+ ions in GaN grown by plasma-assisted molecular beam epitaxy as determined by luminescence spectra. We correlate the photoluminescence spectra with transitions from the 4F3/2 excited state to the 4I9/2, 4I11/2, and 4I13/2 multiplets of the Nd3+ ion...

Investigates the unintentional growth of doped gallium antimonide (GaSb) through molecular-beam epitaxy on gallium arsenide and GaSb. Description of the device structure; Analysis on the photoluminescence of bulk GaSb; Growth morphology of GaSb.

The strain dynamic of thin film AlN is investigated before and after the deposition of a GaN epitaxial layer using plasma assisted molecular beam epitaxy. X-ray diffraction Ï‰/2Î¸ -scan and asymmetric reciprocal space mapping analysis show that the deposition of GaN alters the strain state...

Arsenic doped GaN grown by molecular beam epitaxy has been studied by room temperature photoluminescence. In addition to the wurzite band edge transition, luminescence from the cubic phase and very strong blue emission at âˆ¼2.6 eV are observed. The intensities of the blue and the cubic band...

We have studied the broad blue band, which emerges in the photoluminescence (PL) spectrum of c-plane GaN layers after etching in hot H[sub 3]PO[sub 4] and subsequent exposure to air. This band exhibited a 100 meV blueshift with increasing excitation intensity and a thermal quenching with...

The fundamental band gap of InN films grown by molecular beam epitaxy have been measured by transmission and photoluminescence spectroscopy as a function of temperature. The band edge absorption energy and its temperature dependence depend on the doping level. The band gap variation and Varshni...

Photoluminescence (PL) studies were performed on a 1.5-Î¼m-thick GaN layer grown by molecular-beam epitaxy on a freestanding GaN template that in turn was grown by hydride vapor-phase epitaxy. PL spectra from both the epilayer and the substrate contain a plethora of sharp peaks related to...

Investigates the atomic structure of the inversion domain boundaries in gallium nitride layers grown by molecular beam epitaxy. Proposed method based on the comparison of the stacking sequences of gallium nitride on both of the boundary to distinguish between different models; Evidence shown...