Exact solution in analytical form to the dopant diffusion equation for an arbitrary initial implanted profile is obtained with a judicious choice of variables. The diffusivity can be an arbitrary function of the dopant concentration and the temperature of a sample, provided only that their gradients at the front surface of an ion-implanted semi-infinite semiconductor wafer are zero. As an example, we derive a closed-form expression for the annealed concentration profile for the special case in which the diffusivity is a product of a certain power of the concentration and an arbitrary function of the temperature, the initial dopant concentration profile is a truncated Gaussian, and the temperature dependent part of the diffusivity is initially a Gaussian. The present calculation is a generalization of the data fitting analysis of ion-implanted dopant profile evolution during annealing by R. Ghez, A. S. Oehrlein, T. O. Sedgwick, F. F. Morehead, and Y. H. Lee [Appl. Phys. Lett. 45, 881 (1984)].

Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by which all these defects grow in size and...

In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100...

Examines the evolution of CoSi[sub2] and the fractional variation of A- versus B[sub0,1,2,3]-type precipitates as a function of implantation doses and annealing temperatures. Experimental details; Microstructure of arsenic-implanted and annealed samples.

Presents information on a study which examined the effect of annealing on the optical properties of ion-implanted germanium (Ge) using infrared reflection and transmission measurements. Optical states of amorphous Ge; Properties of Ge; Experimental results and discussion.

Presents a study that reported the depth profiles of manganese (Mn) implants, after annealing, obtained by secondary ion mass spectrometry. Correlations between the movement of the residual impurities and the implanted Mn atoms, or zinc in a comparative sample; Types of substrates;...

Clustering of point defects into dislocations as a consequence of ion implantation and annealing in silicon has been inhibited through the presence of cavities produced by helium ion implantation and located at depths up to 1 Î¼m. We will show that annealing at 1200 Â°C will result in the...

Presents information on a study which investigated the role of damage production and annealing in determining the iron (Fe) redistribution properties when implanting Fe at MeV energies in n-type InP. Experimental details; Results and discussion; Conclusions.

Presents an analysis of carbon films formed on single crystal copper by ion implantation and laser annealing. Survey of laser annealing conditions leading to the formation of carbon films in the implanted copper substrate; Distribution and morphology of carbon at different stages of sample...

Replies to a comment on 'Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon'. Absence of vacancy-type defects following annealing of the positron annihilation spectrometry (PAS); Sensitivity limit of PAS; Role of interstitial clusters as...