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IRVINE, Calif., June 23, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced a 9Gb (gigabit) DDR3 SDRAM memory device that is the first of its kind to be packaged in a single plastic ball grid array (PBGA) and offered as a compact x72 dual in-line memory module (DIMM). The solution enables designers to pack up to 4GByte memory densities into smaller, faster systems used in mission-critical applications. These include secure communications, missile systems, munitions and other applications that operate in demanding environments and require extended-temperature ranges.

"Microsemi's DDR3 SDRAM packaging further strengthens our industry-leading offering of custom and standard high-reliability, extended-temperature memory solutions," said Jack Bogdanski, director of marketing for Microsemi. "We have more than three decades of experience in packaging techniques for military and aerospace applications. We will continue to focus on providing our customers with high-performance, high-reliability solutions that solve space and density issues."

Microsemi's commercial off-the-shelf (COTS) DDR3 SDRAM devices give customers a standalone, high-density memory solution that also meets the data widths necessary for their applications. The DDR3 devices significantly reduce space requirements as compared to systems built from discrete memory components, and also use less board space than memory solutions using chip scale packages (CSPs) and other single-die solutions. The memory devices also streamline input/output (I/O) routing and reduce component count and placements while delivering superior signal integrity.

Key Features

Density – 1GByte, 9Gbits. Upgradeable to 4GBytes

Measures only 20.5 mm x 21.5 mm

Available in a 375 PBGA package

Offers 30 percent space savings and 21 percent reduced I/O routing as compared to solutions with similar capabilities built from discrete components

Supports data rates of 800, 1,066 and 1,333 megabits per second (Mb/s)

Operates on a 1.5 volt power supply

Available in commercial and industrial temperature ranges

Microsemi's high-speed memories optimize performance by using a four nanosecond (ns)-prefetch architecture with an interface that allows two data words to be transmitted per clock cycle. The devices can be ruggedized and processed for tamper resistance, and are offered in densities up to 4GByte with 2x256Mx72 configurations. The company plans to offer a low-profile option that will be footprint-compatible with the current 375 PBGA package. All devices are subjected to extensive environmental and temperature testing.

Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to the 9Gb DDR3 SDRAM memory device that is the first to be packaged in a single plastic ball grid array (PBGA) and offered as a compact x72 dual in-line memory module (DIMM)s, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.