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Intel has also integrated its own implementation of high-performance strained silicon into the new process.

By using strained silicon, current flows more smoothly, thereby increasing the speed of the transistors. This will be the first process in the industry to implement strained silicon in production.

One of the first commercial chips to be made on this process, codenamed Prescott, will be launched in the second half of 2003.

Dr Sunlin Chou, senior vice president and general manager of Intel's Technology and Manufacturing Group, said: "While some are slowly transitioning production to a 130 nanometer [0.13 micron] process on 200mm wafers, we are moving ahead with the most advanced 90 nanometer technology exclusively on 300mm wafers.

"This combination will allow Intel to make better products and reduce manufacturing costs."