White light interferometry analysis for a FBAR structure on
GaN membrane-the profile along the feeding line

SAW resonator manufactured on AlN/Si with 5 GHz resonance frequency

SAW structured were manufactured on AlN layer grown on high resistivity silicon having the resonance frequency around 5 GHz. The resonators have two identical interdigitated transducers (IDT) structures and two reflectors. The IDTs have digists and interdigits with 300nm width (spacial periodicity is λ = 1.2 µm), procesed by nanolithografic techniques.

SEM image of a SAW structure manufactured on AlN

Microwave characterization

Transmision measurements –S11 versus frequency

Input conductance measured for an IDT (left axe, curve with squares) and the measured susceptance (right axe ; curve with circles) obtained from the measurements from S11

Using nanolithografic techniques, SAW structures having IDTs with 30 digits having digists and interdigits with 200nm width and 50 µm legth. The IDT structures are face to face at four different distances d= 20µm, 100 µm, 200 µm and 600 µm.

SEM image of a SAW structure manufactured on GaN/Si; the full structure in the inset

Microwave characterization

Measured reflection losses (S11) versus the frequency for three structures with different distances between the IDTs compared with the electromagnetic simulated results (without the inclusion of the piezoelectric effect).

Transmission measurements for the SAW test structure having a 20-µm distance between the IDTs

Transmission measurements for the SAW test structure having a 1000-µm distance between the IDTs.

Transmission measurements for the SAW test structure having a 200-µm distance between the IDTs.

Transmission measurements for the SAW test structure having a 600-µm distance between the IDTs.