Total Reflection X-Ray Fluorescence (spectroscopy); very effective method for detection of metallic contaminants on the wafer surface; detection of the energy of photons emitted from atoms on the surface as a result of X-ray irradiation at the angle assuring total external reflectance.

metallic contaminant

atoms of metals deposited on the Si surface during device processing as a reult of process malfunction; common metallic contaminants: Fe, Al, Cu, Ca, Na; originate from process chemicals, ambient, and tools; major reliability problem; should not be allowed on Si surface in concentrations above 109 cm-2; designated cleans are applied to remove metallic contaminants from the surface.

X-ray Fluoroescence, XRF

method used to study chemical composition of solids; does not distinguish between surface and the bulk of the solid, and hence, is not very useful in characterization of semiconductor wafers .

Term (Index)

Definition

Total Reflection X-Ray Fluorescence spectroscopy, TXRF

a method very effective in detecting metallic contaminants on the wafer surface; detection of the energy of photons emitted from atoms on the surface as a result of X-ray irradiation at the angle assuring total external reflectance.