Abstract

The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable -type single-crystalfield-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the -type operations for the single crystals with sufficiently large electron affinity. Mobility values are , which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of -type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.

Received 16 February 2008Accepted 10 June 2008Published online 27 June 2008

Acknowledgments:

We thank I. Tsukada for helpful discussions. This work was financially supported by a Grant-in-Aid for Scientific Research (Nos. 17069003, 18028029, and 19360009) from the Ministry of Education, Culture, Sports, Science, and Technology, Japan, and by Japan Science and Technology Agency of Osaka for the Seeds Innovating Project No. 11-054.

Abstract

The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable -type single-crystalfield-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the -type operations for the single crystals with sufficiently large electron affinity. Mobility values are , which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of -type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.