Abstract

We developed self-aligned imprint lithography (SAIL) for top-gate amorphous silicon(a-Si)thin-film transistors(TFTs). Our SAIL process enables a device pattern definition in a single imprint step that uses a three-level mold. The various levels of the mold are defined by a stepwise opening of a chromium hardmask and subsequent dry-etching. For TFT fabrication we imprint, and consecutively etch the imprint resist levels and device layers. The imprinted top-gate a-SiTFTs have nickel silicide source/drain self-aligned to the gate with mobilities of .

Received 12 February 2010Accepted 03 June 2010Published online 28 June 2010

Acknowledgments:

This work was partially supported by the NILquantumdot project of the NILaustria project cluster (FFG project number 815803, www.nilaustria.at) through the Austrian NANO Initiative (bmvit and FFG, www.nanoinitiative.at). E.L. thanks the Austrian Fellowship Organizations of the University of Linz for financial support of her research stay and gratefully acknowledges the hospitality at Princeton University.