Samsung company has announced 256 gigabit flash memory modules with the Toggle DDR 4.0 NAND interface.
The manufacturer claims that the new chips are 40% faster than the previous 64-layer ones. The data transmission speed will reach 1.4 gigabits per second, and the voltage will decrease from 1.8 to 1.2 volts.
Using this innovation, Samsung company plans to release high-speed, high-capacity storage devices.