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Abstract

Substrate bias voltage is controlled within a very narrow range to compensate for process variation in N-channel device fabrication.

Country

United States

Language

English (United States)

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FET N Channel Threshold Voltage Control Circuit

Substrate bias voltage is controlled within a very narrow range to
compensate for process variation in N-channel device fabrication.

The terminal E1 and node NS are connected to the gate electrode and
substrate electrode, respectively, of a field-effect transistor (FET) device, not
shown, for control of its threshold voltage. Devices A and B establish a reference
for the threshold voltage. This voltage is primarily determined by the size of
devices A and B and secondarily by the power supply and threshold voltage. NA
is chosen to be about a half a volt above the desired threshold voltage of a
grounded source device. Devices C and D form a conventional amplifier to
provide a voltage at node NB that controls the gate electrode of device E.

As the threshold voltage increases, node NB is increased to further bias
device E more positively. As device E turns on harder, device G is turned on
harder to increase the substrate voltage at node NS. Device F which is normally
off is turned on, to lower the potential difference between E1 and NS. In effect
device G and resistor R act as a voltage device that is controlled relative to a
reference voltage determined at node NA. Node NS is made less negative as
the threshold voltage increases. When the threshold voltage is below the
reference level, the substrate bias is made more negative.