Plasma Al2O3

Fiji1 vs. Fiji2 vs. Fiji3 vs. Savannah, Plasma vs. Thermal data

Thanks to Max Shulaker and Kye Okabe for the data in their EE412 Presentation and Report from Spring Quarter 2014.

Fiji1 vs. Fiji2, Plasma vs. Thermal data

Thank you to Kye Okabe for providing this data showing roughness and uniformity of Fiji1 and Fiji2 plasma and thermal AlsO3 and HfO2 films.

Surface Roughness and Uniformity Characterization

500 cycles of Plasma AlOx was deposited on a clean Si wafer. Surface roughness and uniformity was measured using AFM and Woollam, respectively by Kye Okabe (okabeATstanfordDOTedu). Data was obtained during February, 2014.

Sample B was immediately stored in a N2 desiccator after deposition. The others were stored under regular air conditions. XPS PHI measurements were performed roughly a week later for sample A & B and two weeks later for sample C to characterize stoichiometry and contamination as a function of sputter etch time (i.e. sample thickness). Sample B was etched until a significant amount of Si was detected. Sample A was assumed to have the same bulk composition as sample B, and only the surface was analyzed to study the difference in storage conditions. Al, O, C, N, Ti, Hf, Si were included in the analysis. (C, N, Ti, Hf are elements that are frequently introduced into the chamber due to commonly used precursors.)