SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

29

Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

66

Types of semiconductor device

68

controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched

76

Unipolar devices

772

Field-effect transistors

78

with field effect produced by an insulated gate

786

Thin-film transistors

H

ELECTRICITY

01

BASIC ELECTRIC ELEMENTS

L

SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

29

Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

02

Semiconductor bodies

06

characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions

10

with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

H

ELECTRICITY

01

BASIC ELECTRIC ELEMENTS

L

SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

21

Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof