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Technique for Reducing Personalized Array Soft Errors

Publishing Venue

IBM

Related People

Chan, YH: AUTHOR

Abstract

A soft error is a random, non-recurring error in a single bit of a memory array caused by alpha particles which create charges that act as leakage current in the memory cell. If the leakage current is high enough, the state of the memory cell is flipped, causing an error. "Qcrit" is defined as the amount of charge required to flip the state of a memory cell.

Country

United States

Language

English (United States)

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Technique for Reducing Personalized Array Soft Errors

A soft error is a random, non-recurring error in a single bit of a memory array
caused by alpha particles which create charges that act as leakage current in the
memory cell. If the leakage current is high enough, the state of the memory cell
is flipped, causing an error. "Qcrit" is defined as the amount of charge required to
flip the state of a memory cell.

The present circuit (see figure) makes use of two transistors Tc and Td to
increase the cell Qcrit to reach 180 to 200fc with only a slight increase in write
path delay. The disclosed technique is DC testable.

Transistors Tc and Td function as diodes. In operation, diode Tc is reverse
biased by connecting its anode (TP1) to a voltage that reverse biases the diode
and gives the required capacitance relative to its cathode. Anode TP1 is
connected to ground during operation for the application. The cathode of diode
Tc is connected to output node Q1.

Diode Td is similarly connected to output node Q2 and TP2. Diodes Tc and
Td increase the capacitance at output nodes Q1 and Q2. Respective nodes TP1
and TP2 from other cells in an array are dotted together and brought outside of
the chip, so that they can be connected either to a test voltage during test mode
or to ground during operation.

The procedure for testing the connections between transistors Tc and Td to
the rest of the array cell is as follows.