Title (fr)

Publication

Application

Priority

US 16500498 A 19981001

Abstract (en)

Disclosed is a method of fabricating a semiconductor field effect transistor, wherein the gate has a short foot portion in contact with the semiconductor substrate for a short gate length and consequent low capacitance, and a large amount of metal in a contact portion for low gate resistance. Salicides are formed on the T-gate source on drain contact areas resulting in large, low resistance contact areas. <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE>