Abstract

We present a molecular dynamics study of grain boundary(GB) resistance to dislocation-mediated slip transfer and phonon-mediated heat transfer in nanocrystallinesilicon bicrystal. Three most stable ⟨110⟩ tilt GBs in silicon are investigated. Under mechanical loading, the nucleation and growth of hexagonal-shaped shuffle dislocation loops are reproduced. The resistances of different GBs to slip transfer are quantified through their constitutive responses. Results show that the Σ3 coherent twin boundary (CTB) in silicon exhibits significantly higher resistance to dislocation motion than the Σ9 GB in glide symmetry and the Σ19 GB in mirror symmetry. The distinct GB strengths are explained by the atomistic details of the dislocation-GB interaction. Under thermal loading, based on a thermostat-induced heat pulse model, the resistances of the GBs to transient heat conduction in ballistic-diffusive regime are characterized. In contrast to the trend found in the dislocation-GB interaction in bicrystal models with different GBs, the resistances of the same three GBs to heat transfer are strikingly different. The strongest dislocation barrier Σ3 CTB is almost transparent to heat conduction, while the dislocation-permeable Σ9 and Σ19 GBs exhibit larger resistance to heat transfer. In addition, simulation results suggest that the GB thermal resistance not only depends on the GB energy but also on the detailed atomic structure along the GBs.

The work was supported by the grant DOE/DE-SC0006539 funded by the U.S. Department of Energy, Office of Science. The work of X.C. was also supported in part by National Science Foundation under Award Nos. CMMI-1233113 and CMMI-1129976. A.C. acknowledges support from Idaho National Laboratory, LDRD # 13-105. X.C. would like to thank Shuozhi Xu from the Georgia Institute of Technology for insightful discussions.