Programmable Metallization
Cell memory (PMCm) represents a radical departure from all existing memory
technologies, including those currently in development. PMCm utilizes
solid state electrochemistry to attain large non-volatile resistance changes
in a simple, highly scalable structure at hitherto unattainable levels
of voltage and energy. PMCm is a solution to the memory scaling quandary
which can be developed to meet all memory requirements of the 2014 node
in the International Technology Roadmap for Semiconductors (ITRS)
and beyond.