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Abstract

A technique is described for use of an electron (E)- beam system for efficient personalization of read-only store (ROS) memories. The E-beam system is used in conjunction with a processing technique to modify the electrical connections in an array of a ROS memory chip.

Country

United States

Language

English (United States)

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Personalization of ROS Memories Using an E Beam System

A technique is described for use of an electron (E)- beam system for efficient
personalization of read-only store (ROS) memories. The E-beam system is used
in conjunction with a processing technique to modify the electrical connections in
an array of a ROS memory chip.

A typical ROS memory is made up of a 2 dimensional array of diodes. The
presence of a diode represents a logical "1"; the absence a "0". The technique
proposed is that all diodes be formed in the normal ROS manufacturing process
with the diodes either all connected or all unconnected. Then at the last, or a
very late, processing step, personalize the ROS by either deleting or inserting
connections by means of programmed E-beam exposure.

A very fast personalizing exposure can be achieved by establishing a novel
sequence of deflection control commands which cause the magnetically deflectal
beam to step to and pause at each potential exposure area, rather than rastering
over the entire exposure field. At each such potential exposure site a small
electrostatic raster is superimposed on the deflection, covering the area which
may or may not require exposure. Thus, the electromagnetic and electrostatic
components of the writing cycle are tailored to each ROS family or masterslice.
The actual personality of the ROS is controlled by the exposure pattern, i.e.,
whether or not the beam is unblanked while it is being rastered over each
potential exposure area. The exposure pattern can be derived in a
straightforward fashion from the desired ROS personality, expressed as a set of
binary digits.