Self-exciting electronic ballast, of small size, and low cost, and high power, with no stroboscopic effect, no noise, is widely used in the general lighting market. This paper describes the cause of high switching loss of self-exciting electronic ballast, based on its operational principle; then, to reduce the switch temperature and increase the reliability of the product, the drive circuit has been improved, to achieve soft-switching. The theory analysis, simulation and experimental result prove the feasibility and compatibility of this new method in practice. Finally, the design procedure and winding method of the self-exciting current transformer are introduced.

The Polarization and Depolarization Current (PDC) measurement is an efficient and effective diagnostic technique based on time domain measurement, for evaluating the high voltage insulation condition. This paper presents a review and comparison results from several published papers on the application of the PDC method to finding the conductivity and moisture content of various types of insulators. For solid insulation, the study was focused on cable insulation, electric machine stator insulation, and paper insulator in transformer insulation with different conditions. For liquid insulation, the review and comparison was done on biodegradable and mineral transformer oils, with fresh oil condition, and aged condition. The results from previous researchers tests were complied, analyzed and discussed, to evaluate the application of the PDC method to monitor the conductivity and moisture of HV equipment insulation systems. From the review results, the PDC technique successfully gives an indication of the conductivity and moisture level of high voltage insulation.

At the moment of transformer energization by the supply voltage, a high current called transient inrush current, which may rise to ten times the transformer full load current, could be drawn by the primary winding. This paper discusses a microcontroller circuit with the intention of controlling and limiting the inrush current for a transformer, by the method of ramping up the supply voltage feeding to the transformer primary. Simulations and the experimental results show a significant reduction of inrush current, when the ramping up voltage is applied to the three-phase transformer load. The inrush current could be almost eliminated if the correct switching step rate is chosen.

Charge trapping nonvolatile memory capacitors with as charge trapping layer were fabricated, and the effects of post annealing atmosphere ( and ) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at , and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using annealing.

Dual phase steels have a microstructure comprising of a polygonal ferrite matrix together with dispersed islands of martensite. There are clear differences between the image quality (IQ) map of the dual phase and the corresponding ferritic/pearlitic structures, both in the as-heat treated and cold rolled conditions. Electron backscatter diffraction (EBSD) techniques were used to study the evolution substructure of steel due to plastic deformation. The martensite-ferrite and ferrite-pearlite interfaces were observed. The interface can be a source of mobile dislocations which the bands seem to originate from the martensite islands. In particular, the use of image quality is highlighted.

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al//Au and Al//Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al//Cu device, the ratio of the HRS to LRS is above , and the memory characteristics are maintained for sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

This study aims to develop an electronic moxibustion device for the quantification of moxibustion, which progresses a critical role in traditional oriental medicine as well as to assess the characteristics of heating. The assessment revealed that the proposed electronic moxibustion treatment device can reduce the time required for reaching the desired heat level and continue to provide heat consistently. Moreover, heat transmitted to the treated area was found to correspond to a heating pattern of the proposed electronic moxibustion device. It proved both quantitative control and safe treatment for the proposed electronic moxibustion device.

In this study, the etching characteristics of titanium dioxide () thin films were investigated with the addition of to CF4/Ar plasma. The crystal structure of the was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an (

A novel memory is reported, in which (GST) has been used as a floating gate. The threshold voltage was shifted due to the phase transition of the GST layer, and the hysteretic behavior is opposite to that arising from charge trapping. Finite Element Modeling (FEM) was adapted, and a new simulation program was developed using c-interpreter, in order to analyze the small shift of threshold voltage. The results show that GST undergoes a partial phase transformation during the process of RESET or SET operation. A large shift was observed when the thickness of the GST layer was scaled down from 50 nm to 25 nm. The novel 1 transistor PCM (1TPCM) can achieve a faster write time, maintaining a smaller cell size.

Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N`-Bis(3-methylphenyl)-N,N`-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) () (60 nm)/Al(100 nm). We investigated the luminescence properties of which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD//Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.

We have investigated the effects of an Ag capping layer on the emission characteristics of transparent organic light-emitting devices with Ca/Ag double-layer cathodes. The thickness of the Ag layer was varied from 10 to 30 nm, whereas the Ca was fixed to be a 10 nm in the Ca/Ag structure. The luminance and current efficiency on the cathode and anode sides are significantly dependent on the Ag thickness. For example, the current efficiency on the anode side increases from 8.4 to 11.7 cd/A, whereas, on the cathode side, it decreases from 3.2 to 0.2 cd/A as the Ag thickness increases from 10 to 30 nm. These changes in emission characteristics were investigated by measuring electroluminescence, transmission, and reflection spectra.

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to in plasma. The etch rate of the Si film was decreased on adding gas, and the selectivity of Si to was increased, on adding gas to the plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of (