Abstract

We report photoluminescence(PL) experiments on individual SiGe quantum dots(QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

This work was supported by the Austrian Science Funds (FWF) via Schrödinger Scholarship J3328-N19 and the Project Nos. F2502-N17 and F2512-N17 of SFB025: IRON. M.G. and O.G.S. acknowledge support from the Center for Advancing Electronics Dresden, CfAED. T.T. was supported by the ICR-KU International Short-term Exchange Program for Young Researchers. The authors thank T. Fromherz and F. Hackl for helpful discussions.

Abstract

We report photoluminescence(PL) experiments on individual SiGe quantum dots(QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.