Triple-Level Cell (TLC) NAND Flash memory at, and
below, 20nm (nanometer) is still largely unexplored by researchers,
and with the ever more commonplace existence of Flash in consumer
and enterprise applications there is a need for such gaps in knowledge
to be filled. At the time of writing, there was little published data
or literature on TLC, and more specifically reliability testing, with
a further emphasis on both endurance and retention. This paper
will give an introduction to NAND Flash memory, followed by an
overview of the relevant current research on the reliability of Flash
memory, along with the planned future work which will provide
results to help characterise the reliability of TLC memory.