Abstract

We report on room-temperature, resonant detection of radiation by gate length heterostructure field-effect transistor. We show that the detection is strongly increased (and becomes resonant) when the drain current increases and the transistor is driven into the current saturation region. We interpret the results as due to resonant plasma wavedetection that is enhanced by increasing the electron drift velocity.

Received 21 February 2005Accepted 13 June 2005Published online 27 July 2005

Acknowledgments:

The work at Ioffe Physico-Technical Institute was supported by RFBR, a Grant of the RAS, and a Grant of Russian Scientific School 2192.2003.2. The work at RPI was supported by the STTR Grant by ARO (Subcontract from SET, Inc.). The authors are also very grateful to M. Dyakonov and M. E. Levinshtein for useful discussions.