Abstract

We investigated the structural, electrical, and optical properties as well as light-induced degradation characteristics of siliconfilms prepared by photochemicalvapor deposition at various hydrogen dilution ratios. The protocrystalline silicondeposited before the onset of the microcrystalline regime was most stable against light soaking. However, the filmsdeposited at the onset of the microcrystalline regime, known to have the most competent device quality and stability, were observed to be less stable. Such instability at the onset of the microcrystalline regime is correlated with the existence of the clustered phase hydrogen that indicates microvoids in the films.