The DE-SERIES Fast Power MOSFETs are a new class of unique high-power devices designed as a circuit element from the ground up for high speed, high frequency, high power applications. DEI’s Fast Power TM technology features low insertion inductance (≈2nH), and a low profile low-cost plastic package, with a RthJC as low as 0.08ºC/W, which provides exceptional switching speeds and power handling capabilities.

The DE-SERIES offer 10 times the speed and 3 times the power dissipation, with 1/2 the volume, 1/3 the weight and greatly reduced die stress, of comparable conventional power MOSFET devices.

The DE-SERIES employs the most electrically, mechanically and thermally advanced high-speed device design available today. The combination of silicon die and packaging make the DE-SERIES the device of choice for high power, high-speed applications.

Application Guides

The DE-Series MOSFETs or ICs may be mounted in three different configurations, depending upon the application and power dissipation required. This document refers to MOSFET mounting, however these mounting instructions also apply to the gate drive ICs packaged in the DE Series packages.

The DE-SERIES Fast PowerTM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high frequency, high power applications. This technical note describes the patented technology utilized to achieve and optimize the electrical, thermal and mechanical performance of the DE-SERIES devices.

Product Notifications

An approved assembly subcontractor for IXYS Colorado, will change the location of the bond
wires from bonding to the device Lead Frame to the device DCB (Direct Copper Bond)
substrate. This change will improve the overall reliability of the devices, and will be phased in
on a lot by lot basis.