M.S. Materials Science + Engineering

Materials Science & Engineering is a fascinating area in which interdisciplinary talent leads to synergies that help solve problems. Students with backgrounds in physics, chemistry, computer science, and nearly all engineering disciplines are welcome. RIT's MSE faculty focus on a variety of materials (polymers, semiconductors, metals, thin films, composites, nanomaterials) for a variety of applications (solar energy, batteries, sensors, advanced electronics).

For more information, contact Prof. Casey W. Miller, Director of the MSE Program

1. Bachelor's Degree in a relevant science or engineering field with an overall GPA of 2.5 (where A = 4.0).
2. Official Transcripts.
3. GRE general test. GRE scores will be incorporated as one portion of the application package, and will not be used in isolation to filter applicants.
4. Two letters of recommendation. Choose faculty or employers that can comment on your scientific abilities.
5. Personal Statement. Tell us about your background, relevant science or engineering experiences and goals, and why you are interested in earning a degree in Materials Science and Engineering.
6. International Students: TOEFL is required.

Admissions Deadlines

The Masters of Science program in Materials Science & Engineering program at RIT has its academic home in the School of Chemistry & Materials Science, where they receive advising and administrative support. However, faculty and students in this program include physicists and chemists in the College of Science, as well as mechanical, chemical and microelectronic engineers in the Kate Gleason College of Engineering. Students take courses and complete these research with faculty members from all of these programs. Faculty research interests include energy, renewable resources, soft materials and nanomaterials. Many of our students and faculty members travel regularly to the Materials Research Society meetings and we have an active MRS chapter at RIT

Wyatt Strong (BS 2011, MS 2013) from Pompey, NY, was attracted to the Physics program at RIT. In the spring of 2009, he started working for the NanoPower Research Labs as an undergraduate researcher under the guidance of Dr. Seth Hubbard and continued to do so for the rest of his undergraduate career. Thereafter, he received his BS in Physics from RIT and from the lab experience he had already gained, he desired to further his understanding of semiconductor materials. Enjoying his time with NanoPower Research Labs, he applied to and was admitted into the RIT Materials Science and Engineering MS program. He worked on a material characterization project with Dr. Seth Hubbard and successfully defended his MS project "Investigation of Deep Level Defects in Electron Irradiated Indium Arsenide Quantum Dots Embedded in a Gallium Arsenide Matrix." As a direct result of the gallium arsenide wafer processing experience gained in the RIT Semiconductor & Microsystem Fabrication Laboratory as well as the electrical characterization of gallium arsenide materials, he was hired as a Development Engineer for HRL Laboratories in Malibu, California to fabricate and test infrared photodetector arrays. Some advice he has kept in mind is this, "You can achieve anything if you work hard enough."