Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3×10−4 mbar without substrate heating and oxygen admittance. The use of pure argon ...

Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon
atmosphere at a high base pressure of 3 10 4mbar without substrate heating and oxygen admittance.
The use of pure argon ...