Dual Tmos Mosfet 3.3 Amperes 60 Volts , Inc

TMOS V is a new technology designed to achieve an onresis-
tance area product about onehalf that of standard MOSFETsMMDF2N06V This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS EFET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power Motor Controls these devices are particularly well suited for
bridge circuits where Diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients. By Freescale Semiconductor, Inc