Abstract

The fabricated Au/Ti/TaOx/TiN devices demonstrate nonlinear behavior at a low resistance state and a complementary resistive switching (CRS) behavior that is dependent upon the thickness of the Ti insertion layer. The nonlinear behavior can be explained by the presence of an ultrathin TiOx layer that acts as a tunnel barrier. In addition, the CRS behavior can be understood in relation to the redistribution of oxygen vacancies between the Ti/TaOx top interfaces. A thicker Ti insertion layer forms a thicker TiOx layer at the Ti/TaOx interface, which can serve as another switching layer. The Au/Ti/TaOx/TiN devices in this study are fabricated with fully complementary metal-oxide-semiconductor-compatible materials and exhibit nonlinear behavior at a low resistance state and a CRS behavior that present possible solutions for the suppression of the sneak current in the crossbar arrays.

Key Topics

[Digital stores characterised by the use of storage
elements not covered by groups G11C11/00, G11C23/00, or G11C25/00, Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00]