RFMD’s second high-power GaN HEMT process technology (GaN2) achieves 1 to 2 dB higher gain and 6 dB greater linearity than RFMD’s first high-power GaN process technology (GaN1) at moderately lower power density. RFMD’s GaN2 targets CATV broadband transmission products and other multi-market applications and is optimized for higher linearity, higher gain and lower voltage operation. RFMD’s first high-power GaN process technology (GaN1) was qualified in the June 2009 quarter and delivers much higher power density and voltage breakdown than competing technologies. RFMD’s GaN1 is ideally suited for high-performance devices such as power amplifiers for radar and communications.

RFMD’s GaN2 reliability measurements confirm a useful lifetime of over 17 million hours at a channel temperature of 200 deg C. This industry-leading reliability performance is especially noteworthy because GaN2 is an early stage process on RFMD’s GaN technology development roadmap. Additional technologies in development include MMIC process modules with complimentary Integrated Passive Component (IPC) technology.

RFMD is scheduled to present numerous white papers on GaN technology and product development at the upcoming IEEE MTT International Microwave Symposium conference. Scheduled presentations include: “GaN Applications Beyond the PA for RF Systems,” “GaN for High Power, High Bandwidth Applications,” “Defining Application Spaces for High Power GaN” and “RFMD Takes GaN Mainstream.” Industry participants interested in learning more about RFMD’s GaN technology development roadmap can visit RFMD at the IEEE MTT International Microwave Symposium, Anaheim, CA, May 25-27, 2010.