When SiO2 is reacted with â€˜Câ€™ at very high temperature in the
range of 1800Â°C then the metallargical grade Si (MGS) is formed. This type
of Si contains the impurities such as Fe, Al and heavy metals so
this is not useful for electronic applications. The metallargical grade Si
is refined further to get semiconductor grade or electronic grade Si (EGS)
in which the impurities are very less so it is a pure Si.

Next we have to convert the high purity electronic grade Si into single
crystal Si ingots or bouls. This is generally done today by a process
commonly called as Czochralski method shortly called as â€˜Czâ€™
method. In Cz crystal growth the shape of the ingot is
determined by combination of two physical properties i.e. the tendency of
cross section and the influence of surface tension.

The cross section of large ingot is almost circular. Figure below shows the
Czochralski (Cz ) process.

After growth the Si ingot is shown in Figure below. The large single
crystal ingot provides typically 12 inch diameter silicon wafers when
sliced using saw.

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