Discrete electron states at the Si(100)/SiO2 interface

Discrete electron states at the Si(100)/SiO2 interface
Kirillova, S.; Primachenko, V.; Serba, A.; Chernobai, V.
2007-12-04 00:00:00
Electron states at thep-Si(100)/SiO2 interface were studied by the method of temperature dependence of surface photo-emf. Taking into account our earlier results on the n-Si(100)/SiO2 interface, we found that, in the absence of an external electric field, four electron states exist in the silicon energy gap. Their positions relative to the midgap Ei are Ei-0.22, Ei -0.11, Ei + 0.23, and Ei + 0.32 eV. It is believed that Pb0andP
b1 centers are responsible for these interface states, which are discovered by the EPR method.
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Abstract

Electron states at thep-Si(100)/SiO2 interface were studied by the method of temperature dependence of surface photo-emf. Taking into account our earlier results on the n-Si(100)/SiO2 interface, we found that, in the absence of an external electric field, four electron states exist in the silicon energy gap. Their positions relative to the midgap Ei are Ei-0.22, Ei -0.11, Ei + 0.23, and Ei + 0.32 eV. It is believed that Pb0andP
b1 centers are responsible for these interface states, which are discovered by the EPR method.