Intel plans to introduce sample chips with its next production process–also based on FinFETs and rated at 14 nanometers–in late 2013 and have volume production the next year. Globalfoundries says it expects to have its first FinFET-based process the same year.

But there’s a noticeable difference. Globalfoundries plans to introduce a hybrid process that combines FinFET transistors rated at 14 nanometers with a layer of interconnection circuitry based on its forthcoming 20-nanometer process.

The acceleration of its process technology development roadmap will likely give Globalfoundries a clear technology lead over other dedicated foundry suppliers. Taiwan Semiconductor Manufacturing Co. (TSMC) and United Microelectronics Corp. (UMC) have indicated that they plan to integrate FinFETs in their 20-nm processes, which UMC is set to put in production in the second half of 2014 and TSMC likely some time after.

Globalfoundries maintains that its 14-nm XM technology is expected to deliver a 40 to 60 percent improvement in battery life compared with today's two-dimensional transistors.