SST’s Smartbit™ based OTP Memory Technology

It all begins with expertise, imagination and dedication...

The SST Smartbit™ cell generates and confines the breakdown voltage entirely in the memory core allowing the unprogrammed cells to have the native reliability of the process while only the programmed cells see high voltage.

To ensure that a programmed cell has achieved hard breakdown, Smartbit™ applies the high voltage until it detects the current signature of hard breakdown. Complete bit cell programming and the longest OTP NVM data retention are guaranteed.