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In conventional wire
bonding, a single wire bond from each functional pad of the silicon is
connected to the package interconnect substrate. For example, a 2-mm to 3-mm
long wire with a 25-µm diameter
results in ~175-mOhms resistance. Doubling the wire diameter to 50 µm reduces the resistance by 4X to ~44
mOhms. However, a larger nonstandard bonding pad, a larger passivation opening
of ~91 µm, and a larger silicon
surface area are required.

General description

The disclosed method
connects two wires instead of a single wire between the silicon pad and the
interconnect package substrate. The two wires are configured in an unparallel
noncontiguous shape to minimize mutual inductive coupling. This double
connection improves the electrical performance and bandwidth of the wire-bond
interconnection. The method extends the technology boundary to higher frequency
applications.

The disclosed method
applies to high-speed devices that operate in the 1-10 GHz range, such as RF
and wireless components. The method supports low package costs and small form
factors. Additionally, the disclosed method may benefit double data rate and
packetized interfaces.

Advantages

The disclosed method
provides advantages, including:
• Improved functionality due to
connecting two wires between the silicon pad and the interconnect package
substrate
• Improved performa...