(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*

This guide provides a more detailed description of the syntax that is supported along with examples.

This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.

Concept Search - What can I type?

For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.

Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.

Complementary Metal Oxide Semiconductor Device

Publishing Venue

IBM

Related People

James, RP: AUTHOR

Abstract

The complementary metal-oxide semiconductor device is formed by diffusing an impurity region 10 into a P- substrate 12, as shown in Fig. 1. Subsequently, an N- epitaxial layer 14 is deposited on the surface of body 12 over diffused region 10, as shown in Fig. 2. Layer 16 of Si(3)N(4) is formed on the surface of layer 14 and a grid-like opening 18 formed by conventional photolithographic etching techniques.

Country

United States

Language

English (United States)

This text was extracted from a PDF file.

This is the abbreviated version, containing approximately
100% of the total text.

Page 1 of 1

Complementary Metal Oxide Semiconductor Device

The complementary metal-oxide semiconductor device is formed by diffusing
an impurity region 10 into a P- substrate 12, as shown in Fig. 1. Subsequently,
an N- epitaxial layer 14 is deposited on the surface of body 12 over diffused
region 10, as shown in Fig. 2. Layer 16 of Si(3)N(4) is formed on the surface of
layer 14 and a grid-like opening 18 formed by conventional photolithographic
etching techniques.

The exposed regions in opening 18 are then oxidized, until the oxide regions
20 contact the PN junction between layer 14 and semiconductor body 12.
Conventional masking and diffusion techniques are used to form P+ source and
drain regions 21 and 22 and N+ source and drain regions 24 and 26. The P
channel device 28 operates in the usual accepted manner. The N channel device
30 is turned off by causing a depletion region to extend through the epitaxial
layer 14.