Abstract

Silicon nitride films have been deposited using electron cyclotron resonance (ECR) plasma-assisted rf sputter deposition. Variation in composition and electrical properties of the deposited films has been studied. Films with specific resistivity of $10^1^3$ \Omega cm and a dielectric constant of 7 have been obtained at a ECR power of 100 W (corresponding to an ion flux of $1X10^1^0 cm^-^3$). These films exhibited minimum interface density of $2X10^1^0 eV^-^1 cm^-^2$ and have a critical field of 5 MV/cm. Detailed electrical characterization of the films has been carried out to study the variation of interface density with ECR power and to identify the conduction mechanism.