On the TCO, a (compact) blocking titanium oxide (Ti[O.sub.2.sup.b]) layer is deposited; on the latter, a mesoporous titanium oxide (Ti[O.sub.2.sup.m]) layer is grown as an n-type semiconductor material.

Sn[O.sub.2] is generally an n-type semiconductor due to the existence of intrinsic defects such as oxygen deficiencies and tin interstitials; but, SnO exhibits p-type conductivity and relatively high hole mobility originated from the tin vacancy.

In the system used in the present study, which is calibrated using well-known n-type and p-type silicon, negative PEC signal indicates an n-type semiconductor while positive PEC signal indicates a p-type semiconductor as a result of different directions of band bending in each case.

where [[epsilon].sup.sn.sub.k] is the n-type semiconductor dielectric constant; [[omega].sub.p] is the angular plasma frequency; [omega] = 2[pi]f is the angular frequency; f is the frequency of EM microwaves; [zeta] is the electrons total collision frequency with semiconductor lattice constant.

When we investigate the possible current conduction mechanisms in a MPS structure with n-type semiconductor, we also should consider the density of interface traps (Dit) and their location with respect to the bottom of conduction band.

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