Abstract

In order to improve the dynamical conditions for possible formation of quasi-Fermi levelseparation between states in the conduction band, upon external illumination of an quantum dot based solar cells, we employ methods of quantum engineering to design the type II alignment, using a GaAsSb barrier buffer underneath InAs/GaAs QD. By changing the Sb amount in the buffer region, we predict an increase of the interband radiative time to the same time scale as interband radiative time, with simultaneous increase of the Auger electron cooling to .