Home » Comment on â€˜â€˜New evidence of small lattice relaxation for the DX center in AlxGa1-xAsâ€™â€™ [Appl. Phys. Lett. 51, 1358 (1987)]

TITLE

Comment on â€˜â€˜New evidence of small lattice relaxation for the DX center in AlxGa1-xAsâ€™â€™ [Appl. Phys. Lett. 51, 1358 (1987)]

AUTHOR(S)

Yu, Peter Y.; Li, Ming-fu

PUB. DATE

May 1988

SOURCE

Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1645

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

Deep level transient spectroscopy has been performed on the DX center in the Ga0.65Al0.35As:Te as a function of pressure. The lattice relaxation we observed showed that the results of Talwar et al. (small lattice relaxation) are inconsistent and inconclusive. Our results significantly weaken their evidence in favor of small lattice relaxation. (AIP)

Using deep level transient spectroscopy we have studied the DX center in a series of periodic GaAs/GaAlAs uniformly Si doped structures. The presence of the DX center is only detected when the structures do not exhibit superlattice behavior. This is understood by the fact that either the DX...

Examines the effect of uniaxial stress on deep level transient spectroscopy of the DX center in aluminum gallium arsenide alloys. Properties of deep centers (DC) in semiconductors; Importance of lattice distortion (LD) in semiconductors; Symmetry of LD in a DC.

We report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1-xAs of very low Al content. For the first time, discrete emission rates corresponding to different local configurations of Ga and Al atoms around the...

Discusses expressions for the depletion width and capacitance transient applicable to traps which may be deep and of high concentration. Use of deep level transient spectroscopy; Depletion-approximation solution to the Poisson equation; Difference between the free-carrier depletion with and the...

Deals with a study focused on a deep-level transient spectroscopy of deep donor traps existing in n-type gallium arsenide epitaxial layers grown by close-spaced vapor transport. Traps seen in other samples in addition to ELCS1; Information on the close-spaced vapor transport technique; Step...

We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect...

Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent...

Presents a correction to the article 'A Quantitative Treatment For Deep Level Transient Spectroscopy Under Minority-Carrier Injection,' by N. Fourches which appeared in the 1991 issue of 'Journal of Applied Physics.'