Magnetic tunnel junction thesis

Unlike DRAM, which uses electrical charge to determine if a bit is a binary 1 or 0, magnetoresistive memory uses a pair of ferromagnetic metal plates separated by a thin insulating material layer. One plate is a permanent magnet, always magnetized, and the other can be magnetized. The orientation of the two magnetic fields defines the 1 or 0 in a binary bit. This basic structure is called a magnetic tunnel junction (MTJ). Arrays of such magnetic tunnel junctions make up the memory device, like arrays of transistors in an integrated circuit make up random access memory ( RAM ).