Abstract

Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxialmagnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances tunnelingmagnetoresistance. A comparative study of the room temperature electron transport and low frequency noise in and magnetic tunnel junctions with reveals that V doping of the bottom electrode for reduces in nearly two orders of magnitude the normalized nonmagnetic and magnetic 1/f noise. We attribute the enhanced TMR and suppressed 1/f noise to strongly reduced misfit and dislocation density.