A comparative study of hydrogen-induced degradation in epitaxial and polycrystalline (Ba, Sr)TiO3 (BST) thin films has been carried out. Epitaxial BST was prepared on SrRuO3 (SRO)/SrTiO3 (STO), whereas polycrystalline BST was deposited on SRO/SiOx/Si. After the Pt top electrode deposition, we have measured the dielectric response and leakage current characteristics before and after annealing in forming gas (6% hydrogen/94% argon) at 450 Â°C for 1 h. Even though both samples have the same capacitor architecture, Pt/BST/SRO, the degree of degradation after annealing in forming gas was found to be quite different. Epitaxial BST films were highly immune to hydrogen degradation; however, polycrystalline BST films degraded severely in terms of both dielectric and electrical properties. We show that the grain boundary is one of the main sources of hydrogen-induced degradation.

The influence of laser intensity on absorption line broadening was investigated. Laser absorption spectroscopy was applied to low-pressure plasma, and the translational temperature deduced from the Doppler width was found to increase with laser intensity; this was in contrast to the conventional...

Pb[sub 0.4]Sr[sub 0.6]TiO[sub 3] films with submicron size grains have been prepared on Pt substrates by the metalorganic decomposition method. X-ray diffraction analysis reveals that the films are polycrystalline with a perovskite crystal structure and negligible tetragonal splitting at room...

Thin films of Sr[sub 2]FeMoO[sub 6] have been deposited on single-crystalline and polycrystalline SrTiO[sub 3] substrates by pulsed laser deposition from a stoichiometric target. In order to obtain high-quality films, the deposition parameters were systematically optimized. The films grown under...

Proposes a method for growth of polycrystalline silicon films on amorphous substrates. Production of nanocrystal seeds; Dependence of grain size and chemical vapor deposition growth rates on seed coverage; Use of nanocrystalline particles.

Examines a low-temperature growth technique for polycrystalline silicon. Effects of depositing silicon on glass substrates; Information on the preferred orientation of polycrystalline silicon on glass and zinc sulphide buffer layer; Impact of the zinc sulphide buffer layer on the crystallinity...

Studies the rate of resistance degradation of thin niobium-doped strontium titanate polycrystalline films with platinum top electrodes and iridium bottom electrodes. Reduction of the resistance degradation rate by increasing the amount of niobium.