Category

Published on

22 Jan 2014

Abstract

MIG contains a demonstration of Negative Bias Temperature Instability (NBTI), which is a major reliability issue for nanoscale MOS devices. When a device is stressed at negative voltage, depassivation of SiH bonds in the interface occurs. As a result, interface traps are generated (reaction) and the resulting hydrogen species diffuses away from the interface (diffusion). Hence, device characteristics (threshold voltage, mobility, drain current, etc) degrades with time and such degradation satisfies a power law (~ time^n) formula.
Implementing such Reaction-diffusion (RD) model, MIG shows how threshold voltage of a PMOS device can change with time at different voltages and temperatures.