Entegris expands its Taiwan tech center to add new microcontamination analysis and tech development capacity

Entegris Inc. (NASDAQ: ENTG), a specialty materials provider, today announced the expansion of its Taiwan Technology Center for Research and Development (TTC) in Hsinchu, Taiwan. The expansion adds a new Microcontamination Control Lab (MCL) that focuses on filtration media development and is home to the company’s relocated Asia Applications and Development Labs (AADL) for trace metal, organic contaminant, and nanoparticle analysis. This addition to the Center’s existing R&D, formulation scale-up, and pilot production capabilities also creates a single, off-site collaboration location for our customers’ specialty chemical, CMP and liquid filtration needs.

Key facts for the $8.5 million USD investment:

Class 1000 cleanroom

5x increase in lab space

Facility renovations and equipment upgrades

“Interactions and dependencies between process materials and equipment are at a critical evolution point as device scaling continues to be a leading driver for efficient construction of today’s devices. Bringing the industry’s brightest minds together in a state-of-the-art facility enhances Entegris’ unique ability to meet these needs,” offered Entegris Chief Operations Officer, Todd Edlund. “By expanding the MCL facility, we bring together core-competencies in liquid filtration, specialty chemicals, and CMP to create more holistic analytical services and technology development solutions designed to meet our customer’s Logic, DRAM, and 3D NAND device manufacturing challenges.”

For more information on the new TTC and upgraded MCL lab, please visit the Entegris product display area, booth #176, during SEMICON Taiwan, Sept. 13-15, 2017, at the Taipei Nangang Exhibition Center.

FEATURED PRODUCTS

TECHNOLOGY PAPERS

As IP and IC designers and verification teams tackle increased complexity and expectations, reliability verification has become a necessary ingredient for success. Automotive, always-on mobile devices, IOT and other platforms require increasingly lower power envelopes and reduced device leakage while maintaining overall device performance. Foundries have also created new process nodes targeted for these applications. Having the ability to establish baseline checks for design and reliability requirements is critical to first pass success. January 08, 2018Sponsored by Mentor Graphics

The power amplifier (PA) – as either a discrete component or part of an integrated front end module (FEM) – is one of the most integral RF integrated circuits (RFICs) in the modern radio. In Part 2 of this white paper series, you will learn different techniques for testing PAs via an interactive white paper with multiple how-to videos.September 06, 2017Sponsored by National Instruments

WEBCASTS

Since 2006, many of new 3D NAND Flash cells have been proposed and commercialized on the market. Already, we have seen 3D NAND cell structure up to 64L/72L with single or multi-stack NAND string architecture. The memory density on Micron/Intel’s 64L 3D NAND 256 Gb/die reached 4.40 Gb/mm2 (256 Gb/die). In this session, we’ll overview 3D NAND Flash roadmap, products, cell design, structure, materials and process integration. The 3D NAND cell architecture from major NAND manufacturers including Samsung TCAT V-NAND, Toshiba/Western Digital BiCS, SK Hynix P-BiCS and Micron/Intel FG CuA will be reviewed and compared. Current and future technology challenges on 3D NAND will be discussed as well.

MEMS have quite different process and material requirements compared to mainstream microprocessor and memory types of devices. We will explore the latest trends in MEMS devices – including sensor fusion, biosensors, energy harvesting – new manufacturing challenges and potential equipment and materials solutions to those challenges.