Abstract

A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parameters extraction procedure is reported. The model, which is implemented in Hewlett-Packard MDS software, is based on a physical description and includes the high order effects of HBT operation. The extraction process requires only conventional DC and microwave measurements and does not need any numerical optimisations. In order to demonstrate the accuracy of the model, simulations performed without convergence problems are compared to measurements data for a 2x30um2 GaInP/GaAS HBT.

Abstract

A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parameters extraction procedure is reported. The model, which is implemented in Hewlett-Packard MDS software, is based on a physical description and includes the high order effects of HBT operation. The extraction process requires only conventional DC and microwave measurements and does not need any numerical optimisations. In order to demonstrate the accuracy of the model, simulations performed without convergence problems are compared to measurements data for a 2x30um2 GaInP/GaAS HBT.