Home » Selective Ge deposition on Si using thermal decomposition of GeH4

TITLE

Selective Ge deposition on Si using thermal decomposition of GeH4

AUTHOR(S)

Ishii, Hiromu; Takahashi, Yasuo; Murota, Junichi

PUB. DATE

October 1985

SOURCE

Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p863

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

Deposition characteristics of Ge using thermal decomposition of GeH4 are studied. The deposition rate of Ge in a surface reaction region at temperatures below 410 Â°C is formulated as a function of the deposition temperature and GeH4 partial pressure. Selective deposition of Ge occurs reproducibly in the lower temperature range below 410 Â°C. The cause of the suppression of selectivity and epitaxial growth at deposition temperatures above 450 Â°C is confirmed as oxide contamination on the substrate.

The Al/TiH2 precursor was heated in an infrared furnace to melt aluminium and to decompose TiH2, which resulted in the H2 gas generation in molten aluminium. Titanium hydride (TiH2) powder as a foaming agent was added to the aluminium melt. The aim of this paper is to understand the detailed...

Presents a method for nitriding iron at low temperatures. Application of a thin nickel layer coat; Prevention of oxidation of iron impurities in the NH[sub 3] gas; Role of the nickel layer as catalyst for the decomposition of NH[sub 3]; Diffusion of atomic nitrogen following decomposition.

Nanoparticulate zinc oxide can be prepared at low temperatures from solution processable zinc acetylacetonate. The use of this material as a cathode interfacial layer in nanoparticulate organic photovoltaic devices results in comparable performances to those based on reactive calcium layers....

Î±"-Fe16N2 nanopowder was sintered at high-pressure and low temperature in order to explore its feasibility as a bulk magnet. TEM observation confirmed that the nanopowder was densely consolidated by sintering at a pressure of 1.2GPa and temperatures around 200 Â°C. Increasing the sintering...

Experimental data on the thermal conductivity K(T) of crystals of natural and highly enriched germanium (99.99%) [sup 70]Ge with lapped and polished surfaces are analyzed in the temperature range âˆ¼1.5-8 K. In all the samples in the temperature range âˆ¼1.5-4 K the standard boundary...

The thermal decomposition pathway of an ultrathin oxide layer on Ge(100) and Si(100) surfaces is examined by synchrotron radiation photoelectron spectroscopy and ultraviolet photoelectron spectroscopy with helium I radiation. The as-prepared oxide layer consists of a mixture of oxides, namely,...

A series of Si:Ge alloys and structures has been prepared by ultrahigh-vacuum chemical vapor deposition. Alloys of composition 0â‰¤Ge/Siâ‰¤0.20 are readily deposited at T=550 Â°C. Commensurate, defect-free strained layers are deposited up to a critical thickness, whereupon the...