Focused ion beam (FIB) machining has become a standard tool for sample
preparation and in combination with digital image correlation (DIC) for
the evaluation of local intrinsic stresses by measuring strain
relaxation. However, FIB milling always leads to irradiation damage of
the material. Current models for the formation of irradiation damage and
the sputter yield are based on two key parameters, the threshold
displacement energy (TDE) and surface binding energy (SBE), which are
usually determined from unstrained systems with idealized surfaces. Here
we use atomistic simulations to determine the TDE and SBE for strained
silicon and aluminum and compare the results to full cascade
simulations. A clear, material class dependent influence of the strain
state on the TDE is observed, and surface amorphisation is shown to
significantly increase the SBE of 001 surfaces. (C) 2016 Elsevier Ltd.
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