Material: Sodium Silicate (Na2O:SiO2 ~ 1:3), film

Solution,used in low temperature wafer bonding, using silicon substrate, film thickness=83.7 nm,layer produced by spinning on(3000rpm) a diluted solution of sodium silicate on silicon substrate, content of sodium silicate in solution=5%(wt),homogenity=1.457%,wavelength not given.

IEEE Micro Electro Mechanical Systems Workshop,Feb 1992,Germany, p.51

Refractive index

1.4

Solution,used in low temperature wafer bonding, using silicon substrate, film thickness=35.6 nm,layer produced by spinning on(3000rpm) a diluted solution of sodium silicate on silicon substrate, content of sodium silicate in solution=2%(wt) ,homogenity=1.437%,wavelength not given.

IEEE Micro Electro Mechanical Systems Workshop,Feb 1992,Germany, p.51

Refractive index

1.1

Solution used in low temperature wafer bonding, using silicon substrate, film thickness=7.2 nm,layer produced by spinning on(3000rpm) a diluted solution of sodium silicate on silicon substrate, content of sodium silicate in solution=0.5%(wt),homogenity=1.45%,wavelength not given.

IEEE Micro Electro Mechanical Systems Workshop,Feb 1992,Germany, p.51

Refractive index

1.2

Solution,used in low temperature wafer bonding, using silicon substrate, film thickness=3.6 nm,layer produced by spinning on(3000rpm) a diluted solution of sodium silicate on silicon substrate, content of sodium silicate in solution=0.1%(wt),homogenity=1.45%,wavelength not given.