Patent application title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract:

According to the present invention, a protective seal S1 for protecting a
transparent member 11 is composed of an organic base 16, adhesive layers
17, and a second adhesive layer 18 having low adhesion. The adhesive
layers 17 are provided only on edges corresponding, on the organic base
16, to sides 11b of the transparent member and the second adhesive layer
18 is provided on a portion corresponding, on the organic base 16, to a
surface 11a of the transparent member. The organic base is fixed to the
sides 11b and the surface 11a of the transparent member 11 with the
adhesive layers 17 and 18.

Claims:

1. A semiconductor device, comprising:a semiconductor element having an
element region including at least one of a light receiving region and a
light emitting region;a transparent member; anda protective seal for
covering a surface of the transparent member,wherein the transparent
member is disposed on the semiconductor element, andthe protective seal
is bonded only to sides of the transparent member.

2. The semiconductor device according to claim 1, wherein the
semiconductor element and the transparent member are bonded via a resin
adhesive.

3. The semiconductor device according to claim 1, wherein a hollow is
formed between the semiconductor element and the transparent member.

4. A semiconductor device, comprising:a semiconductor element which has an
element region including at least one of a light receiving region and a
light emitting region and has a plurality of bonding pads;a substrate
having a plurality of connecting terminals in a cavity for storing the
semiconductor element;wires for connecting the bonding pads and the
connecting terminals;a transparent member bonded to the substrate; anda
protective seal for covering a surface of the transparent member,wherein
the protective seal is bonded only to sides of the transparent member.

5. The semiconductor device according to claim 4, wherein the protective
seal is composed of a base so large as to cover the surface of the
transparent member; andadhesive layers provided only on portions
covering, on the base, the sides of the transparent member.

6. The semiconductor device according to claim 4, wherein the protective
seal has a first plane larger than the surface of the transparent member;
andsecond planes extending from sides around the first plane over the
sides of the transparent member and a top surface of the cavity.

7. The semiconductor device according to claim 5, wherein the protective
seal has a first plane larger than the surface of the transparent member;
andsecond planes extending from sides around the first plane over the
sides of the transparent member and a top surface of the cavity.

8. A semiconductor device, comprising:a semiconductor element which has an
element region including at least one of a light receiving region and a
light emitting region and has a plurality of bonding pads;a transparent
member attached to a top surface of the semiconductor element so as to
cover the element region;a substrate which includes a plurality of
connecting terminals and has the semiconductor element die bonded
thereon;wires for connecting the bonding pads and the connecting
terminals;a mold resin for sealing the semiconductor element, sides of
the transparent member, and the wires on the substrate; anda protective
seal for covering a surface of the transparent member and a top surface
of the mold resin,wherein the protective seal is bonded only to the top
surface of the mold resin.

9. The semiconductor device according to claim 8, wherein the protective
seal is composed of a base so large as to cover the surface of the
transparent member; andadhesive layers provided only on portions
covering, on the base, the top surface of the mold resin.

10. The semiconductor device according to claim 8, wherein the protective
seal has a third plane larger than the surface of the transparent member;
andfourth planes extending from sides around the third plane over the top
surface of the mold resin.

11. The semiconductor device according to claim 9, wherein the protective
seal has a third plane larger than the surface of the transparent member;
andfourth planes extending from sides around the third plane over the top
surface of the mold resin.

12. The semiconductor device according to claim 4, wherein the protective
seal includes at least one crease formed in parallel with one side of the
transparent member.

13. The semiconductor device according to claim 5, wherein the protective
seal includes at least one crease formed in parallel with one side of the
transparent member.

14. The semiconductor device according to claim 8, wherein the protective
seal includes at least one crease formed in parallel with one side of the
transparent member.

15. The semiconductor device according to claim 9, wherein the protective
seal includes at least one crease formed in parallel with one side of the
transparent member.

16. The semiconductor device according to claim 4, wherein in the
protective seal, the region covering the surface of the transparent
member is colorless and transparent or is transparently colored.

17. The semiconductor device according to claim 5, wherein in the
protective seal, the region covering the surface of the transparent
member is colorless and transparent or is transparently colored.

18. The semiconductor device according to claim 8, wherein in the
protective seal, the region covering the surface of the transparent
member is colorless and transparent or is transparently colored.

19. The semiconductor device according to claim 9, wherein in the
protective seal, the region covering the surface of the transparent
member is colorless and transparent or is transparently colored.

20. A method of manufacturing a semiconductor device, comprising the steps
of:preparing a semiconductor element beforehand which has an element
region including at least one of a light receiving region and a light
emitting region and has a plurality of bonding pads;preparing a substrate
which has a plurality of connecting terminals in a cavity for storing the
semiconductor element;storing the semiconductor element in the
cavity;connecting the bonding pads and the connecting terminals via
wires;bonding a transparent member to the substrate; andcovering a
surface of the transparent member with a protective seal for protecting
the surface of the transparent member, in a state in which the protective
seal is bonded only to sides of the transparent member.

Description:

FIELD OF THE INVENTION

[0001]The present invention relates to a semiconductor device such as a
semiconductor imaging device including, for example, a light receiving
element as an optical element, and a method of manufacturing the same.

BACKGROUND OF THE INVENTION

[0002]In the prior art, in semiconductor devices composing semiconductor
imaging devices and the like, each optical element having an element
region including at least one of a light receiving region and a light
emitting region is, for example, a CCD acting as a light receiving
element having a light receiving region or an image sensor having a CMOS
configuration. For such semiconductor devices, the following
configuration has been proposed: a semiconductor element which includes
an imaging region having an image sensor formed therein as a light
receiving element and includes a plurality of bonding pads is mounted in
a recessed cavity formed in a package body, a transparent member is
mounted over the cavity, and the transparent member and the package body
are secured with a resin adhesive.

[0003]In the proposed configuration of the semiconductor device, the
semiconductor element is die bonded to a die attachment surface in the
cavity of the package body made of ceramic, with a resin such as epoxy
resin or a resin sheet. Further, the connecting terminals of the package
body and the Al electrodes (bonding pads) of the semiconductor element
are electrically connected to each other by wire bonding, and then the
cavity is covered with the transparent member. Moreover, the transparent
member is fixed on the package body by bonding with a resin adhesive.
After that, a protective seal is bonded over the transparent member in
order to protect the transparent member during transportation or protect
a surface of the transparent member during mounting.

[0004]On a surface of the semiconductor element mounted in the
semiconductor device configured thus, a plurality of microlenses are
formed. Microlenses are called on-chip lenses and are made of acrylic
resin which increases a light condensing rate. Such lenses have
disadvantages in terms of heat resistance. To be specific, microlenses
are softened and deformed by heat applied for a long time. Further, the
resin adhesive used for fixing the transparent member to the package body
does not have heat resistance.

[0005]However, in recent years, there is a growing need for semiconductor
devices used with CCDs and image sensors having CMOS configurations under
high temperature and humidity conditions. In response to this need,
on-chip lens materials and resin adhesives have been improved, so that
heat resistance and humidity resistance under high temperature and
humidity conditions have been increased for the semiconductor devices and
resin adhesives used for the semiconductor devices. Thus the
semiconductor devices can be used in such an environment.

[0006]Further, the semiconductor device configured thus is mounted on a
mounting substrate under high temperature conditions and thus materials
resistant to the high temperature conditions during mounting have been
demanded. Moreover, when the semiconductor device is mounted on the
substrate, a protective seal is necessary for protecting the transparent
member from scratches and dust. The protective seal also has to be
resistant to heat under the high temperature conditions when the
semiconductor device is mounted. Further, it is important to prevent the
adhesive of the protective seal from being left on the surface of the
transparent member when the protective seal is peeled after passing under
the high temperature conditions during mounting.

[0007]As a method for preventing the adhesive of a protective seal from
being left, for example, Japanese Patent Laid-Open No. 2005-340752
discloses a technique in which a protective seal has a base made of
polyethylene naphthalate and is formed by bonding adhesive tapes, each
having an adhesive layer at least on one surface. In this technique, it
is preferable that the adhesive layer is not provided on a part extended
over a light receiving region on a glass surface composing a surface of a
video sensor.

[0008]In this case, the adhesive layer of the protective seal is not left
in the light receiving region on the glass surface but is left in the
other regions on the glass surface, so that it is necessary to wipe the
glass surface.

[0009]However, in the semiconductor device of the prior art, the
protective seal is composed of the base made of an organic material and
the adhesive layer, and thus when the protective seal is peeled, the
outside shape of the protective seal and the adhesive may be left on the
surface of the transparent member, that is, on an imaging surface. When
the adhesive is left on the imaging surface, the adhesive on the imaging
surface may be reflected in an image.

[0010]Comparing a heated protective seal and an unheated protective seal,
it is found that adhesive is more likely to be left when the protective
seal is heated by thermally decomposing the adhesive and the adhesive is
more likely to be left when the protective seal is processed under high
moisture conditions as compared with the adhesive of the protective seal
not processed under high moisture conditions.

[0011]Moreover, when the protective seal is bonded to the transparent
member, bubbles (voids) may be trapped. In this case, the adhesive is
likely to be left around the bubbles.

[0012]As a solution to the left adhesive, the surface of the transparent
member may be wiped after the protective seal of tape is peeled. In this
method, the left adhesive may be spread over the surface of the
transparent member during wiping, so that special chemicals have to be
used.

[0013]Further, when the surface of the transparent member is wiped, dirt
or dust left on the transparent member may cause quality defect. Thus
wiping has to be carefully performed, which leads to a distinct
disadvantage in terms of cost.

DISCLOSURE OF THE INVENTION

[0014]The present invention has been devised to solve the problems of the
prior art. An object of the present invention is to provide a
semiconductor device and a method of manufacturing the same which can
prevent a protective seal from leaving adhesive on a surface of a
transparent member even under high temperature conditions when the
semiconductor device is mounted, while sufficiently protecting the
transparent member from scratches and dust with the protective seal
during mounting.

[0015]In order to solve the problems, a semiconductor device of the
present invention includes: a semiconductor element having an element
region including at least one of a light receiving region and a light
emitting region; a transparent member; and a protective seal for covering
the surface of the transparent member, wherein the transparent member is
disposed on the semiconductor element and the protective seal is bonded
only to the sides of the transparent member.

[0016]Further, a semiconductor device of the present invention includes: a
semiconductor element which has an element region including at least one
of a light receiving region and a light emitting region and has a
plurality of bonding pads; a substrate having a plurality of connecting
terminals in a cavity for storing the semiconductor element; wires for
connecting the bonding pads and the connecting terminals; a transparent
member bonded to the substrate; and a protective seal for covering the
surface of the transparent member, wherein the protective seal is bonded
only to the sides of the transparent member.

[0017]Moreover, a semiconductor device of the present invention includes:
a semiconductor element which has an element region including at least
one of a light receiving region and a light emitting region and has a
plurality of bonding pads; a transparent member attached to the top
surface of the semiconductor element so as to cover the element region; a
substrate which includes a plurality of connecting terminals and has the
semiconductor element die bonded thereon; wires for connecting the
bonding pads and the connecting terminals; a mold resin for sealing the
semiconductor element, the sides of the transparent member, and the wires
on the substrate; and a protective seal for covering the surface of the
transparent member and the top surface of the mold resin, wherein the
protective seal is bonded only to the top surface of the mold resin.

[0018]Further, the protective seal includes at least one crease formed in
parallel with one side of the transparent member.

[0019]A method of manufacturing a semiconductor device of the present
invention includes the steps of: preparing a semiconductor element
beforehand which has an element region including at least one of a light
receiving region and a light emitting region and has a plurality of
bonding pads; preparing a substrate which has a plurality of connecting
terminals in a cavity for storing the semiconductor element; storing the
semiconductor element in the cavity; connecting the bonding pads and the
connecting terminals via wires; bonding a transparent member to the
substrate; and covering the surface of the transparent member with a
protective seal for protecting the surface of the transparent member, in
a state in which the protective seal is bonded only to the sides of the
transparent member.

[0020]Moreover, the protective seal includes at least one crease formed in
parallel with one side of the transparent member.

[0021]As described above, according to the present invention, it is
possible to prevent the adhesive layer from leaving adhesive on the
surface of the transparent member when the protective seal attached to
the transparent member is peeled, even in the event of a thermal stress
under high temperature conditions during mounting, while sufficiently
protecting the transparent member from scratches and dust with the
protective seal when the semiconductor device is mounted.

[0022]Thus the semiconductor device can obtain sufficient heat resistance
and moisture resistance, so that a semiconductor device such as a
semiconductor imaging device can be easily achieved with high
reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

[0023]FIG. 1 is a sectional view showing the configuration of a
semiconductor device according to a first embodiment of the present
invention;

[0024]FIG. 2 is a sectional view showing the configuration of a
semiconductor device according to a second embodiment of the present
invention;

[0025]FIG. 3 is a sectional view showing the configuration of a
semiconductor device according to a third embodiment of the present
invention;

[0026]FIG. 4 is a sectional view showing a method of manufacturing the
semiconductor device according to the first embodiment of the present
invention;

[0027]FIG. 5 is a sectional view showing the configuration of a
semiconductor device according to another embodiment of the present
invention; and

[0028]FIG. 6 is a sectional view showing the configuration of a
semiconductor device according to still another embodiment of the present
invention.

DESCRIPTION OF THE EMBODIMENTS

[0029]A semiconductor device and a method of manufacturing the same
according to embodiments of the present invention will be specifically
described below with reference to the accompanying drawings. In these
drawings, the thicknesses, lengths, and so on of components are made
different from the actual shapes in the preparation of the drawings.
Further, the electrodes and terminals of the components are made
different in number from actual components to simplify the illustration.
Moreover, the materials of the components are not limited to materials
described in the following explanation.

First Embodiment

[0030]The following will describe a semiconductor device according to a
first embodiment of the present invention.

[0031]FIG. 1 is a sectional view showing the configuration of the
semiconductor device according to the first embodiment. As shown in FIG.
1, the semiconductor device of the first embodiment includes a
semiconductor element 12 which has an element region J1 including at
least one of a light receiving region and a light emitting region and has
a plurality of bonding pads 15, a substrate 13 which includes a recessed
cavity C1 for storing the semiconductor element 12 and has a plurality of
connecting terminals T1 in the cavity C1, wires 14 for electrically
connecting the bonding pads 15 and the connecting terminals T1, a
transparent member 11 bonded to the substrate 13 with a resin adhesive 22
on positions outside the semiconductor element 12 disposed on the
substrate 13, and a protective seal S1 for covering a surface 11a and
sides 11b of the transparent member 11. The protective seal S1 is
composed of an organic base 16 so large as to cover the surface 11a and
the sides 11b of the transparent member 11 and adhesive layers 17
provided only on portions covering, on the organic base 16, the sides 11b
of the transparent member ii. The shape of the organic base 16 has a
first plane M1 larger than the surface 11a of the transparent member 11
and second planes M2 extending from sides around the first plane M1 over
the sides 11b of the transparent member 11 and the top surface of the
cavity C1.

[0032]The organic base 16 of the protective seal S1 has portions covering
the sides 11b of the transparent member 11 and only the portions are
bonded to the transparent member 11 with the adhesive layers 17.

[0033]Generally, the wires 14 are Au wires.

[0034]In the protective seal S1, the organic base 16 has a region covering
the surface 11a of the transparent member 11 and the region is generally
colorless and transparent or is transparently colored.

[0035]The organic base 16 of the protective seal S1 is mainly made of a
material such as polyimide and polyethylene terephthalate. The adhesive
layers 17 are mainly made of acrylic and silicone materials.

[0036]With this configuration, the adhesive layers 17 of the protective
seal S1 are not provided on a portion covering the surface 11a of the
transparent member 11 of the semiconductor device. Thus it is possible to
achieve a semiconductor device in which adhesive is not left on the
surface 11a of the transparent member 11 after the protective seal S1 is
peeled, even when heat is applied to mount the semiconductor device on a
mounting substrate.

[0037]Further, even when the semiconductor device is mounted on the
mounting substrate under high temperature conditions, the adhesive layers
17 of the protective seal S1 bonded to the transparent member 11 are not
left on the surface 11a of the transparent member 11. Thus it is possible
to achieve a reliable semiconductor device which does not allow left
adhesive to be reflected in an image.

Second Embodiment

[0038]The following will describe a semiconductor device according to a
second embodiment of the present invention.

[0039]FIG. 2 is a sectional view showing the configuration of the
semiconductor device according to the second embodiment. As shown in FIG.
2, the semiconductor device of the present embodiment includes a
semiconductor element 12 which has an element region J1 including at
least one of a light receiving region and a light emitting region and has
a plurality of bonding pads 15, a substrate 13 which includes a recessed
cavity C1 for storing the semiconductor element 12 and has a plurality of
connecting terminals T1 in the cavity C1, wires 14 for electrically
connecting the bonding pads 15 and the connecting terminals T1, a
transparent member 11 bonded to the substrate 13 with a resin adhesive 22
on positions outside the semiconductor element 12 disposed on the
substrate 13, and a protective seal S1 for covering a surface 11a and
sides 11b of the transparent member 11. The protective seal S1 is
composed of an organic base 16 so large as to cover the surface 11a and
the sides 11b of the transparent member 11, adhesive layers 17 provided
on portions covering, on the organic base 16, the sides 11b of the
transparent member 11, and a second adhesive layer 18 which is provided
on a portion covering, on the organic base 16, the surface 11a of the
transparent member 11 and has lower adhesion than the adhesive layers 17,
so that the adhesion of the second adhesive layer 18 is lower than in
other regions. The shape of the organic base 16 has a first plane M1
larger than the surface 11a of the transparent member 11 and second
planes M2 extending from sides around the first plane M1 over the sides
11b of the transparent member 11 and the top surface of the cavity C1.

[0040]The organic base 16 of the protective seal S1 has portions covering
the sides 11b of the transparent member 11 and the portions are bonded to
the transparent member 11 with the adhesive layers 17. Further, the
organic base 16 has a portion covering the surface 11a of the transparent
member 11 and the portion is bonded to the transparent member 11 with the
second adhesive layer 18.

[0041]Generally, the wires 14 are Au wires.

[0042]In the protective seal S1, the organic base 16 has a region covering
the surface 11a of the transparent member 11 and the region is generally
colorless and transparent or is transparently colored.

[0043]The organic base 16 of the protective seal S1 is mainly made of a
material such as polyimide and polyethylene terephthalate. The adhesive
layers 17 are mainly made of acrylic and silicone materials.

[0044]With this configuration, it is possible to more reliably protect the
surface 11a of the transparent member 11 from external contamination
during mounting and so on.

Third Embodiment

[0045]The following will describe a semiconductor device according to a
third embodiment of the present invention.

[0046]FIG. 3 is a sectional view showing the configuration of the
semiconductor device according to the third embodiment. As shown in FIG.
3, the semiconductor device of the third embodiment includes a
semiconductor element 12 which has an element region J1 including at
least one of a light receiving region and a light emitting region and has
a plurality of bonding pads 15, a substrate 13 which includes a recessed
cavity C1 for storing the semiconductor element 12 and has a plurality of
connecting terminals T1 in the cavity C1, wires 14 for electrically
connecting the bonding pads 15 and the connecting terminals T1, a
transparent member 11 bonded to the substrate 13 with a resin adhesive 22
on positions outside the semiconductor element 12 disposed on the
substrate 13, and a protective seal S1 for covering a surface 11a and
sides 11b of the transparent member 11. The protective seal S1 is
composed of an organic base 16 so large as to cover the surface 11a and
the sides 11b of the transparent member 11 and adhesive layers 17
provided only on portions covering, on the organic base 16, the sides 11b
of the transparent member 11. The shape of the organic base 16 has a
first plane M1 larger than the surface 11a of the transparent member 11
and second planes M2 extending from sides around the first plane M1 over
the sides 11b of the transparent member 11 and the top surface of the
cavity C1. The organic base 16 further includes at least one crease 19
formed in parallel with one side of the transparent member 11.

[0047]The organic base 16 of the protective seal S1 has portions covering
the sides 11b of the transparent member 11 and only the portions are
bonded to the transparent member 11 with the adhesive layers 17.

[0048]Generally, the wires 14 are Au wires.

[0049]In the protective seal S1, the organic base 16 has a region covering
the surface 11a of the transparent member 11 and the region is generally
colorless and transparent or is transparently colored.

[0050]The organic base 16 of the protective seal S1 is mainly made of a
material such as polyimide and polyethylene terephthalate. The adhesive
layers 17 are mainly made of acrylic and silicone materials.

[0051]As in the second embodiment, in the semiconductor device of the
third embodiment, the organic base 16 of the protective seal S1 may
further include a second adhesive layer 18 which is provided on a portion
covering the surface 11a of the transparent member 11 and has lower
adhesion than the adhesive layers 17, so that the adhesion of the second
adhesive layer 18 is lower than in other regions.

[0052]With this configuration, it is possible to peel the protective seal
S1 from the transparent member 11 without applying a stress to the
adhesive layers 17.

(Method of Manufacturing the Semiconductor Device)

[0053]The following will describe a method of manufacturing the
semiconductor device according to the embodiments of the present
invention. The semiconductor device of the first embodiment will be
illustrated as an example of the manufacturing method.

[0054]FIG. 4 is a sectional view showing the method of manufacturing the
semiconductor device according to the first embodiment. The process of
the method of manufacturing the semiconductor device is dividedly
illustrated in FIGS. 4(A) to 4(F).

[0055]The semiconductor element 12 is prepared beforehand which has the
element region J1 including at least one of the light receiving region
and the light emitting region and has the plurality of bonding pads 15.
Further, the substrate 13 is prepared which includes the recessed cavity
C1 for storing the semiconductor element 12 and has the plurality of
connecting terminals T1 in the cavity T1 (step (a)).

[0056]Next, the semiconductor element 12 is stored in the cavity C1 of the
substrate 13 by die bonding with a die bonding material (step (b)). After
that, the plurality of bonding pads 15 of the semiconductor element 12
and the plurality of connecting terminals T1 in the substrate 13 are
electrically connected to each other via the Au wires 14 (step (c)).
Next, the resin adhesive 22 for bonding the transparent member 11 is
applied on the substrate 13 (step (d)).

[0057]After that, the transparent member 11 is placed on the resin
adhesive 22 and is positioned at proper positions outside the
semiconductor element 12 on the substrate 13, and then the resin adhesive
22 is cured with ultraviolet radiation or heat, so that the transparent
member 11 is bonded to the substrate 13 (step (e)). Next, the protective
seal S1 made up of the organic base 16 and the adhesive layers 17 is
bonded to the sides 11b of the transparent member 11 with the adhesive
layers 17 to protect the surface 11a of the transparent member 11, so
that the surface 11a and the sides 11b of the transparent member 11 are
covered with the protective seal S1 (step (f)).

[0058]The semiconductor device is manufactured by the foregoing steps.

[0059]The semiconductor devices of the second and third embodiments can be
similarly manufactured by the steps of the manufacturing method.

Another Embodiment

[0060]The following will describe a structural example of a semiconductor
device according to another embodiment of the present invention.

[0061]FIG. 5 is a sectional view showing another structural example of the
semiconductor device according to the present embodiment. As shown in
FIG. 5, the semiconductor device of the present embodiment includes a
semiconductor element 12 which has an element region J1 including at
least one of a light receiving region and a light emitting region and has
a plurality of bonding pads 15, a transparent member 11 bonded to the top
surface of the semiconductor element 12 with a resin adhesive 22 so as to
cover the element region J1, a substrate 21 which includes a plurality of
connecting terminals T2 and has the semiconductor element 12 die bonded
thereon, wires 14 for electrically connecting the bonding pads 15 and the
connecting terminals T2, a mold resin 23 for sealing the semiconductor
element 12, sides 11b of the transparent member 11, and the wires on the
substrate 21, and a protective seal S1 for covering a surface 11a of the
transparent member 11 and a surface (will be referred to as a top surface
U1) of the mold resin 23 on the side where the surface 11a of the
transparent member 11 is exposed. The protective seal S1 is composed of
an organic base 16 so large as to cover the surface 11a of the
transparent member 11 and the top surface U1 of the mold resin 23, and
adhesive layers 17 provided only on portions covering, on the organic
base 16, the top surface U1 of the mold resin 23. The shape of the
organic base 16 has a third plane M3 larger than the surface 11a of the
transparent member 11 and fourth planes M4 extending from sides around
the third plane M3 over the top surface U1 of the mold resin 23.

[0062]The organic base 16 of the protective seal S1 has portions covering
the top surface U1 of the mold resin 23 and only the portions are bonded
to the mold resin 23 with the adhesive layers 17.

[0063]When the top surface U1 of the mold resin 23 is flush with the
surface 11a of the transparent member 11, the adhesive layers 17 of the
protective seal S1 may be provided at points other than the transparent
member 11.

[0064]In the protective seal S1, the organic base 16 has a region covering
the surface 11a of the transparent member 11 and the region is generally
colorless and transparent or is transparently colored.

[0065]Further, in the protective seal S1, the organic base 16 preferably
includes at least one crease 19 formed in parallel with one side of the
transparent member 11.

[0066]With this configuration, it is possible to peel the protective seal
S1 from the transparent member 11 without applying a stress to the
adhesive layers 17.

[0067]Generally, the wires 14 are Au wires.

[0068]The organic base 16 of the protective seal S1 is mainly made of a
material such as polyimide and polyethylene terephthalate. The adhesive
layers 17 are mainly made of acrylic and silicone materials.

[0069]The substrate 21 may be one of an organic substrate and a lead
frame.

[0070]As in the second embodiment, in the semiconductor device of the
present embodiment, the organic base 16 of the protective seal S1 may
further include a second adhesive layer 18 which is provided on a portion
covering the surface 11a of the transparent member 11 and has lower
adhesion than the adhesive layers 17, so that the adhesion of the second
adhesive layer 18 is lower than in other regions.

[0071]With this configuration, the same effect can be obtained as in the
foregoing embodiments.

[0072]In the foregoing embodiments, the organic base 16 of the protective
seal S1 may be mainly made of materials such as polyethylene
terephthalate, polyphenylene sulfide, polyallylate, polysulfone,
polyethersulfone, polyether ether ketone, polyether-imide,
polyamide-imide, liquid crystal polymer, polyimide, polyphthalamide,
polyethylene naphthalate, and fluororesin. In view of heat resistance and
a rate of shrinkage, it is particularly preferable that the organic base
16 is mainly made of polyimide.

[0073]Further, in the protective seal S1, it is desirable that the
adhesive layers 17 are 10 μm in thickness and the organic base 16 is
50 μm in thickness.

[0074]As shown in FIG. 6, the present invention is also applicable to a
Si-penetrating (bonded piece by piece) semiconductor device (package) in
which through wiring KH1 and balls B1 are provided on a semiconductor
element 12.

[0075]In this package, the chip-sized semiconductor device has an element
region J1 including at least one of a light receiving region and a light
emitting region. The protective seal S1 has portions covering sides 11b
of a transparent member 11 and only the portions are bonded with adhesive
layers 17.

[0076]In such a chip-sized semiconductor device, the characteristics are
quite seriously affected by contamination on a glass surface. However,
the present embodiment can prevent the protective seal from leaving
adhesive in the chip-sized semiconductor device.