Proceedings Paper

Taking GaAs and GaN as representation, negative electron affinity (NEA) photocathode has many virtues,
such as high quantum efficiency, low dark current, concentrated electrons energy distribution and angle distribution,
adjustive long-wave threshold, great potential to extend the long-wave spectral response waveband. Therefore it plays
more and more important effect in high performance image intensifiers and polarized electron sources. GaN NEA
photocathode and GaAs NEA photocathode are very similar because they all belong to III-V compound. But, GaN
photocathode and GaAs photocathode have many difference in such aspects as preparation process, activation manners,
stability and application field etc. In this paper, using the multi-information measurement and evaluation system of
photocathode, the preparation processes of native reflection-mode GaN photocathode and GaAs photocathode are
studied. The different activation manners of GaN photocathode and GaAs photocathode are compared and analyzed. The
spectral response and stability of the two kind of photocathode are compared also. The experiments indicate: the
atomically clean degree of NEA photocathode surface and the structure of activation layer are the main factors that
influence photocathode sensitivity and stability after activation. GaN photocathode and GaAs photocathode have good
NEA property and large quantum yield. Compare with GaAs photocathode, GaN photocathode has high stability, and the
decay of the quantum yield is comparatively slow.