Abstract

We have characterized damage production in both (InGa)As/GaAs and Ga(AsP)/GaP strained‐layer superlattices (SLS’s) for fluences sufficient to induce compositional disordering at three different implant temperatures. Dramatically different implant temperatures are required to produce similar defect distributions between the two SLS systems. Implants at lower temperatures [80 K for the (InGa)As/GaAs system, 300 K and below for the Ga(AsP)/GaP system] exhibit amorphous zones at depths consistent with the predictions of ion range codes; while implants at elevated temperatures [25 °C in (InGa)As/GaAs, 400 °C in the Ga(AsP)/GaP system] exhibit greatly reduced damage levels characterized mainly by extended defects.