A method is specified for producing an optoelectronic semiconductor component having a plurality of image points (71, 72), comprising the following steps: a) provision of a semiconductor layer sequence (11, 12, 13) comprising - an n-conducting semiconductor layer (11), - an active zone (13), and - a p-conducting semiconductor layer (12); b) application of a first layer sequence (22, 31), wherein the first layer sequence (22, 31) is divided into a multiplicity of regions (61, 62) which are arranged laterally spaced with respect to each other on a top surface (12a) of the p-conducting semiconductor layer (12) facing away from the n-conducting semiconductor layer (11); c) application of a second insulating layer (32); d) partial removal of the p-conducting semiconductor layer (12) and the active zone (13), in such a way that the n-conducting semiconductor layer (11) is exposed at points and the p-conducting semiconductor layer (12) is divided into individual regions (71, 72) which are laterally spaced with respect to each other, wherein each of the regions comprises a part of the p-conducting semiconductor layer (12) and a part of the active zone (13).