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Dec- 18, 1962
A. H. BOBECK
3,069,665
MAGNETIC MEMORY CIRCUITS
Filed Dec. 14, 1959
5 Sheets-Sheet 1
FIG./
INFORM/1 T/ON U T/L IZA T/ON CIRCUITS
//v I/ENTOR
EVA. H. BOBECA’
ATTORNEY
Dec. 18, 1962
A. H. BOBECK
3,069,665
MAGNETIC MEMORY CIRCUITS
Filed Dec. 14, 1959
3 Sheets-Sheet 2
Q‘EIuHkbGsUmE.M
WU 4% _B
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INFORMATION U T/L /ZA 7'ION C/RCU/ T5
INFORMA TIO/V
INFORMAT/ON
ADDRESS
ADDRESS
I
MAGNET/C
BIAS
INVENTOR
By A. H. BOBECK
A TTORNEV
Dec. 18, 1962
A. H. BOBECK
3,069,665
MAGNETIC MEMORY CIRCUITS
Filed Dec. 14, 1959
3 Sheets~$heet 3
FIG.4A
STORE '0"
NFORMA T/O/V
ADDRESS
IN VENTOR
By A. H. BOBECK
mm?m
A TTORNE V
"ie
a ited rates
3??§£h5
Patented Dec. 18, 1962
2
1
whether toroidal cores or memory wires, the problem
is presented how most advantageously to bring an effec
3,069,6d5
MAGNETIC MEMORY QTRCUTTS
Andrew H. Boheclt, Chatharn, Ni, assignor to Bell Teie»
phone‘Laboratories, incorporated, New York, NY” a
corporation or New York
Filed Dec. 14, 1959, her. No. 859,443
26 Claims. (Ci. 34-0-1745)
tive magnetic ?eld into inductive relationship with a
switching memory element. In one such wire memory
element arrangement described in the copending applica
tion of the present inventor, Serial No. 858,636, filed
December 10, 1959, a plurality of parallelly arranged
This invention relates to information handling systems
and more particularly to coordinate magnetic ‘memory
magnetic wire memory elements constitute the Y co
ordinates of an XY coordinate array. The X coordi
nates of the array are made up of serially connected en
arrays adapted for use in such systems.
Coordinate memory arrays in which information is
stored in the form of a predetermined pattern of perma
ergizing windings which may conveniently be in the form
flat strip solenoids inductively coupled to the Y co
nent magnets arranged on an information card are well
known in the art. Further, such arrays in which mag
netic switching elements are employed to interrogate the
stored information are also well known.
In one such
ordinate wire memory elements. The X coordinate sole
noids are arranged in the memory array in conjunction
“ with an electrically conductive sheet, which sheet com
prises the information carrying portion of the memory
array.
Information is stored in the form of a prede
illustrative memory array a particular pattern of perma
termined pattern of apertures provided in the ‘sheet, which
nent magnets is arranged closely adjacent a correspond
ing coordinate array of magnetic switching elements.
The ?eld of each of the permanent magnets is suf?cient
apertures are arranged to coincide with information ad
dress segments of the wire memory elements at inter
sections or crosspoints of the X and Y coordinates of the
to magnetically saturate the adjacent corresponding mag
arm
netic elements. When an interrogation drive magneto
motive force is now applied to the memory elements
having permanent magnets adjacent thereto, the latter
memory elements, as a result, will be unable to respond
by flux switching. This result may be detected in the
conventional manner by the absence of readout signals
on sensing conductors coupled to the switching elements.
This absence is conventionally held indicative of stored
‘binary “Us” in the pattern of permanent magnets. Where
no permanent magnets appear adjacent the magnetic
switching elements, the interrogating drive will be e?ective
.
When an interrogating pulse is applied to a solenoid
during readout, magnetic ?elds are generated as a result,
2 01 which ?elds are operative in cooperation with the con
ductive sheet, to cause ?ux switching at the information
address segments of the wire memory elements. The
shielding effects of the conductive sheet at its solid por
tions as compared with the free operation of the ?elds
at the apertures of the sheet on the ability of an infor
mation address segment to switch ?ux, provides the basis
for discriminating between the two binary values. Thus,
as is determined by the particular relationship of the
to cause a ?ux switching in the adjacent switching ele
conductive sheet to the other element of the memory
As a result, and also in the conventional man~ 35 array assembly, the particular binary value to be read
ner, output signals will be induced in coupled sensing con
out of an information address is controlled by the solid
ments.
ductors, which signals will be indicative of stored binary
(‘£78,’
The pattern of permanent magnets is advantageously
affixed to a nonmagnetic card or plate.
The points on
the plate corresponding to the crosspoints of the associ
ated coordinate array of magnetic elements at which no
permanent magnets are ai?xed are thus representative
of binary “l’s.” An advantageous information storage
arrangement is thus achieved in which information, al
though permanently storable, is readily changed by simply
or apertured condition of the conductive sheet adjacent
that information address. A simple and advantageous
permanent memory array is thus achieved which does
not require the use of permanent magnets to in?uence
the switching behavior of the information address seg
ments.
It is an object of the present invention to provide a
new and novel means for controlling ?ux switching in
address segments of magnetic wire memory arrays.
Another object of the present invention is to accomplish
removing the permanent magnet card containing one
the patterned disabling of particular magnetic switching
grouping of information and substituting for it a sec
elements in a coordinate memory array in accordance
ond card containing another information grouping. Such 50 with stored information without the use of permanent
an information storage arrangement in which toroidal
magnetic cores are employed as switching elements is
described in detail in the copending application of the
administratrix of the estate of S. M. Shackell, deceased,
Serial No. 708,127, ?led January 10, 1958.
Although in the illustrative permanent magnet storage
arrangement referred to in the immediately foregoing,
toroidal cores are advantageously employed as inter
rogating elements, magnetic wire memory elements al
so of a character well known in the art may be employed
for this purpose with equal facility. By simply substi
uting a coordinate of toroidal core elements with a
magnets.
.
It is another object of this invention to provide a new
and novel means for permanently storing information
hitsin a coordinate memory array.
A further object of this invention is to simplify the
construction of a permanent information storage array
and at the same time to increase the reliability and per
formance of the readout circuitry.
The foregoing and other objects of this invention are
realized in one specific illustrative embodiment thereof
which comprises, like the coordinate memory array re
ferred to previously herein, a plurality of parallelly ar
ranged magnetic wire memory elements. The latter wire
of the wire element may be disabled from flux switching
elements have helical magnetizable components which
during interrogation ‘by adjaccntly disposed permanent 65 may be of substantially rectangular hysteresis character
magnets. Thus, the operation in terms of the manner
istic material, and the wire elements constitute the Y co
of information storage and interrogation of such a Wire
ordinates‘ of an XY coordinate array. The X coordinates
memory element arrangement is closely similar to that
of the array are made up or" serially-‘connected energizing
of an analogous arrangement employing toroidal cores.
windings which may conveniently also be in the form of
flat strip solenoids inductively coupled to the Y coordi
In such coordinate memory arrays where information
is stored in the form of patterns of discrete magnetic
nate wire memory elements. The X coordinate solenoids,
which de?ne the information word groupings of the
?elds operating upon magnetic switching elements,
single wire memory element, particular address segments
8,069,665
3
4
memory array, are arranged to face, on one side thereof,
the wire memory elements. On the other side, the strip
solenoids face flat information strips by means of which
the immediate information storage function of this inven
tion is performed. In a word-organized coordinate array
in that segment is already in the direction to which the
interrogating magnetomotive force tends to drive it. A
resulting absence of an appreciable voltage signal gener
arrangement presently contemplated, both the strip sole
noids and corresponding information strips de?ne the
mation strip of binary “Us.” The information strips may
advantageously be affixed to removable and interchange
ated across the ends of the wire memory element is thus
also conventionally indicative of the storage in an infor
able insulated information cards to achieve a simple per
manent information storage array in which information
ments by both the strip solenoids and corresponding infor 10 is easily alterable. Additional economy and ease of fab
mation strips. At each of the information addresses so
rication may be achieved by utilizing the advantages of
marked off the information strip is cut away in a manner
printed circuit techniques in preparing the information
corresponding to the particular binary information value
strips on the information cards.
to be stored at the address.
‘In another illustrative embodiment of this invention,
At an address where, say, a binary “l” is to be stored, 15 each of the information strips has superimposed thereon
the strip is cut away by having an aperture provided
another strip which is also cut away in accordance with the
word rows.
Individual information addresses are thus
marked off on the intersecting magnetic wire memory ele
therein. This aperture is located substantially centrally
of the information strip and, with respect to the asso
ciated wire memory element, such as to encompass the
information address thereon. On the other hand, where
a binary “0” is to be stored, the information strip is
notched on opposite edges to provide a central solid por
tion of the information strip which is located with respect
to the associated wire memory element such as also to
encompass the information address thereon. A biasing
current applied to the wire memory elements magnetically
biases the magnetizable components of address segments
thereof to one direction of magnetization.
When an
stored information, but in a reciprocal fashion. Thus,
where the lower strip has an aperture therein, the upper
strip is oppositely notched and where the lower strip is
notched the upper strip is apertured. The direct current
applied to the information strips in this embodiment is
oppositely poled for the upper and lower strips. At an
address where a ?ux switching is to be permitted responsive
to an interrogating current pulse, a ?eld is generated
by the information strips which here actually operates in
the direction opposite to that of the applied interrogating
drive.
Flux switching indicative of the presence of a
binary “1” in the information strips is thereby insured.
interrogating current pulse is applied to the strip solenoid
On the other hand, at an address where a flux switching
of a selected word to be read, the ?elds generated as a 30 is to be inhibited when an interrogating drive is applied
representative of the storage of a binary “0,” the ?eld
result act to switch the magnetic flux of the coupled ad
provided by the superimposed information strips main
dress segments of the memory elements to the opposite
tains the ?ux state of the interrogated information address
.clirection of magnetization. Any ?ux switching which
occurs in the wire memory elements as a result of the
segment of a wire memory element in the direction to
applied interrogating pulse may advantageously be de 35 which the interrogating drive tends to switch it. Advan
tected across the ends of the wire memory elements as
tageously in this embodiment the continuous magnetic
voltage signals in the known manner of operation of such
bias applied to the address segments of the Wire memory
elements is not necessary since the superimposed informa
tion strips themselves control the particular magnetic state
40 of the address segments. In this embodiment also the
wire memory elements. The voltage signals so gener
ated are also conventionally indicative of the storage in
the interrogated information addresses of binary “l’s.”
In the present invention a direct current is continu
information strips may be fabricated in conjunction with
a retaining card for ease of altering the information to be
ously applied to the information strips and the magnetic
?elds generated thereby will be differently manifested at
the apertured end notched points thereon. The ?elds
permanently stored.
information strip passes through the solid portions of the
of the address segments during interrogation of the mem
It is a feature of this invention that conductive strips
generated at each of the information addresses will be 45 are positioned adjacent the information address segments
of a magnetic wire memory array, the strips being aper
proportional to the current density in the information
tured at the adresses at which binary “l’s” are to be stored
'strip at those points. Thus, at an information address
and oppositely notched at the addresses at which binary
where a binary “l” is to be read out, that is where the
“O’s” are to be stored. The different ?elds generated at
information strip is centrally apertured, the magnetic
?eld acting on the address segment of the wire memory 50 notched and apertured portions of the information strips
when the latter are energized thus control the switching
element is substantially negligible. The current in the
strip on either side of the aperture encompassing the
information address with the result that the generated
?eld at that point is divided and therefore incapable of
effecting the flux switching ability of the associated address
segment of the wire memory element.
When an inter
rogating pulse is subsequently applied as above described,
ory array.
‘It is another feature of this invention that a ?rst in
formation strip, notched and apertured in accordance with
information stored therein, has another information strip,
reciprocally apertured and notched also in accordance
with the same information, superimposed thereon. The
?elds generated by the two strips when energized control
the interrogated information address is free to respond
by ?ux switching to generate a voltage signal across the 60 ?ux switching in the information address segments of a
magnetic wire memory array during interrogation.
ends of the memory element indicative of a binary “1.”
‘It is still a further feature of this invention that binary
At an information address in which the information
information, stored in the form of particular magnetic
strip stores a binary “0,” that is, where its edges are
oppositely notched, the magnetic ?eld acting on the ad 65 ?elds generated by energized information strips, notched
and apertured in accordance with the information, is in
dress segment of the wire memory element is also propor
terrogated by means of magnetic wire memory elements.
tional to the current density in the information strip at
. The foregoing and other objects and features of this
that point. However, at the latter address segment a
invention may be better understood from a consideration
solid portion of the strip appears and the generated ?eld
is concentrated at the address segment. As a result, the 70 of the detailed description of speci?c illustrative embodi
ments thereof which follows when taken in conjunction
?ux at the latter address segment is maintained in a mag
with the accompanying drawing in which:
netic ?ux state opposite to that of the continuously applied
FIG. 1 is a simpli?ed presentation of one illustrative
bias. Accordingly, when an interrogating current is ap
memory array according to the principles of this invention
plied to the associated word solenoid, no ?ux switching
with a portion thereof broken away better to show the
occurs in the interrogated address segment since the flux 75 details thereof;
3,069,665
5
6
FIGS. 2A and 2B are cross~sectional views of particular
portions of the memory array of FIG. 1 taken along the
lines 2A and 28, respectively;
FIG. 3 is a simpli?ed presentation of a portion of an
other illustrative memory array according to the principles
121 being connected at an output end to ground. Each
of the wire memory elements 10 is connected at one end
to a ground bus 20 and its other end to a source of posi
tive current 21 through a load resistor 22 via a conduc
tor 23;
FIGS. 4A and 4B are cross-sectional views of particular
portions of the memory array of FIG. 3 taken along the
Each of the wire memory elements It? is also con
nected at its other end through an amplifying means 24
to information utilization circuits 25. The solenoids 11
lines 4A and 413, respectively.
are connected at one end to a word selection switch
of this invention showing its essential details; and
The details of one speci?c illustrative embodiment of 10 26 to which the returns 11' are also connected. The
sources 19 and 21 may comprise any suitable current
this invention may now be described with par ’cular
generator capable of providing steady state currents of
reference to FIG. 1 of the drawing. The memory array
the character to be described herein. Similarly the am
there presented comprises a plurality of magnetic wire
memory elements ltil through 108. Each of the elements
plifying means 24- are of a character as may be deter
10 comprises an electrical conductor having, in this em 15 mined by the degree of ampli?cation needed to raise out
put voltage signals generated by the memory array to
bodiment, a helical magnetizable component wound there
levels suitable for use by the utilization circuits 25. The
around. Such a wire memory element is described in de
tail in another copending application of the present in
ventor, Serial No. 675,522, ?led August 1, 1957. The
word selection switch 26 may advantageously comprise
well-known magnetic core circuitry designed to selec
sarily, have substantially rectangular hysteresis charac
solenoids 11.
teristics. Although the foregoing magnetic wire memory
24, 25, and 26 will be known to and readily devisable
by one skilled in the art and accordingly need only be
helical magnetizable components may, but need not neces 20 tively provide drive interrogation current pulses for the
Each of the circuit components 19, 21,
elements are assumed for purposes of describing the prin
shown symbolically without further detailed description.
ciples of this invention, it is to be understood that other
magnetic wire memory elements operating on analogous 25 The memory array thus far described is organized as
an 8 x 8 array; however, it is to be undersood that this
?ux switching principles may equally well be used in prac
invention is not limited to arrays of any particular capac
ticing this invention and such use is included within the
ity and arrays of any size are equally within the scope of
scope thereof. The wire memory elements it) are ar
this invention. The memory array of FIG. 1 is further
ranged substantially parallelly and form the Y coordinates
of a coordinate array. Inductively coupled to the wire 30 described as word organized. Thus, each of the sole
noid-information strip alignments de?nes a word row of
memory elements 10 and lying transversely thereto are
the array.
a plurality of strip solenoids 111 through 113. The sole
With the foregoing organization and structural ele
noids 11 are also arranged in parallel and comprise the
X coordinates of the array.
The solenoids 11 are so ar
ranged with respect to the wire memory elements it) that
each passes above the latter elements as viewed in the
drawing and each has a return 11' passing beneath the
memory elements it) also as so viewed.
An information
address is de?ned at each of the coordinate intersections
by the solenoids 11 on the wire memory elements it}, the
information addresses taking the form of discrete seg
ments of the wire elements it).
Arranged above the plurality of strip solenoids 11 as
viewed in the drawing is a plurality of information strips
121 through 128, respectively.
The strips 12 are fur—
ther positioned with respect to the wire memory ele
ments it) such that when energized in the manner to he
ments of a memory array according to this invention in
mind, an illustrative operation thereof may now be de
scribed. This may conveniently be accomplished with
reference to FIGS. 2A and 2B which show respectively,
cross sections of the memory array of FIG. 1 at an in
forrnation address in which a binary “1” is stored and
one in which a binary “O” is stored. In describing
an illustrative operation it will be assumed that the word
row de?ned by the solenoid 11.13 is selected for interroga
tion. The individual bits making up the information word
stored at this row may be determined by inspection from
the aperture and notch representations of the binary
values as previously described as comprising the values,
0, 0, l, O, 0, O, l, l. A continuously applied direct
described, an inductive coupling is achieved. The strips
current postive bias is applied from the source 21 to each
tures 15 are each dimensioned so as to encompass an
1‘ and 7" in FIGS. 2A and 2B, respectively. As described
previously herein, the direct current from the source 1.9
of the wire memory elements 10, which bias maintains
12 are notched and apertured in accordance with the in
formation which is to be stored in the memory array 50 a magnetic flux in the helical magnetizable components
of the latter elements in a downward direction as viewed
of which they are part. Thus, a pair of opposite notches
in the drawing and as indicated by the arrows 27 in FIGS.
13 and 14 are provided at particular information ad
2A‘ and 2B. A continuous positive direct current is also
dresses and an aperture 15 is provided at other informa
applied from the source 19 to each of the serially con~
tion addresses. The notches 13 and‘14 are each dimen
s'ioned so that a solid portion 16 substantially‘ of a width 55 nected information strips 12 which latter current acts
to generate magnetic ?elds at the notched and apertured
equal to the length of an address segment of a wire
portions of the strips 12 as shown by the lines of ‘force
memory element 10 is left in the strip 12. The aper
address segment of a wire memory element it). As will
become apparent during the description of an illustrative 60 is divided around an aperture 15 in an information strip
12 and accordingly two ?elds f are generated at the
operation of the memory array hereinafter, the notched
solid portions of the strip 12 on either side of an aperture
portion 16 in an information strip 12 is representative
15. These ‘?elds however are of relatively small mag
of a binary “0” and the aperture 15 in an information
nitude and in any event are operative between the infor
strip 12 is representative of a binary “l.” The informa_
tion strips 12 may advantageously be all‘ixed on a hold 65 mation address segments of the wire memory elements
it) and thus are unable to affect the read out operation
ing sheet to maintain the relative positions of the com
of the array to be described. These ?elds f are shown in
ponents so far described in alignment. In the embodi
FIG. 2A. At a solid portion 16 of the information
ment of FIG. 1 the information strips 12 are shown as
strips l2, on the other hand, a larger ?eld)" is generated
affixed to a translucent insulating shee 17, which sheet
together with the information strips 125 through 128 are 70 by the current applied from the source 21 and this ?eld
is strong» enough to act on an address segment of a wire
depicted as partially broken away to show more clearly
memory element ‘itl. As may be determined from an in
the details of the memory array assembly. The informa
spection of FIG. 2B, the effect of the ?eld f’ is to drive
tion strips 12 are serially connected together by con
the address segment at a point adjacent thereto to a
ductors 13, the strip 123 being connected at an input end
to a source of positive direct current 19' and the strip 75 magnetic ?ux condition opposite to that of the magnetic
8,069,665
formation strip 123. Similarly, for illustrative purposes
bias resulting from the current applied from the source
21. The magnetic states of the information address seg
only, arbitrary groups of information values are shown as
stored in the other information strips 12 in FIG. 1.
ments of the wire memory elements 10 of the word row
Another illustrative embodiment of this invention is
shown in part in FIG. 3. Only sufficient portions of the
memory are there shown to gain a complete understand
ing of this embodiment of the invention. A plurality of
to be presently interrogated accordingly is as follows:
the address segments on the memory elements 101, 102,
104, 105, and 10B are maintained magnetized upward
against the bias of the source 21 by the direct current
applied to the information strips 12 by the source 19,
magnetic wire memory elements 301 through 308, similar
to those described in connection with the memory array
and the address segments on the memory elements 103,
107, and 108 are in their normal downward magnetiza 10 of FIG. 1, are arranged in a coordinate array with a
plurality of interrogating solenoids 311 through 318, only
tion as the result of the bias from the source 21, unin
?uenced by the continuously applied drive from the in
the solenoids 311, 312, and 313 of which are shown in
FIG. 3. The solenoids 31 are inductively coupled to the
formation strips 12. The magnetic directions indicated
memory elements 30 and de?ne thereon a coordinate ar
are for purposes of description as viewed in the draw
rng.
15 ray of information addresses thereon in the maner also
At the time that the selected word row is interrogated,
described for the embodiment of FIG.-l, each of the
a positive current pulse 28 is applied from the word
- solenoids 31 having a return 31’ passing beneath the ele
selection switch 26 to the interrogating solenoid 113. As
ments 31 as viewed in the drawing. Each of the wire
memory elements 30' is connected at one end through an
a result, magnetic ?elds are generated at each of the in
amplifying means 32 to information utilization circuits
formation addresses, which ?elds are designated by the
33 and at its other end to a ground bus 34. Each of
lines of force 1"’ in FIGS. 2A and 2B. As is apparent
from an inspection of the drawing, bearing in mind
‘the interrogating solenoids 31 is connected at one end,
and at its other end through its return 31’, to a word
the polarity of the interrogating current pulse 28, the
selection switch 35. The latter switch and the amplify
?elds thus developed are in a upward direction as viewed
ing means 32 may be of a character identical to that de
in the drawing, that is, in a direction opposing that of
scribed for the corresponding elements of the embodiment
the normal magnetic bias of the wire memory elements 10.
of FIG. 1. It may be noted at this point that no mag
Thus, as a result, at the information address segments of
netic biasing means is provided in the present embodi
the latter elements which are unin?uenced by the informa
tion ?elds generated by the information strip 123, a ?ux
ment nor, as will become clear hereinafter, is such a
switching occurs. A voltage signal of one polarity is ac 30 means required.
Arranged in alignment with the interrogating solenoids
cordingly generated across the ends of each of the Wire
31 and thereabove as viewed in the drawing, is a plu
memory elements 103, 107, and 108 at which the informa
rality of doubled information strips 36. The lower por
tion strip 123 is oppositely notched. The voltage signals
so generated are representative in the conventional man
tion of each of the strips, only the strips 361, 362, and
ner of the storage in the information strip 123 at those 35 363, of which are shown, is analogous in its informa~
tion bearing character to the information strips 12 of
addresses, of binary “1’s” and are transmitted via the am
plifying means 24, to the information utilization circuits
25. At the information adresses on the wire memory ele
the embodiment of FIG. 1. At an information address
where a binary “0” is to be stored an aperture 37 is
provided in the lower portion of the strip 36 and at an
ments 101, 102, 104, 105, and 106, at which points the in
formation strip 123 is apertured, the associated address 40 information address where a binary “l” is to be stored
the strip is oppositely notched. The upper portion 36'
segments are already in the magnetic direction to which
the interrogating drive pulse tends to drive them. Accord
ingly, the latter address segments are merely driven fur
of each of the information strips 36, on the other hand,
is reciprocally cut away to provide an aperture at an in
formation address Where the lower portion of the strip is
ther into magnetic saturation by the interrogating drive.
Only negligible voltage signals, which may be considered 45 notched and to provide a pair of opposite notches where
the lower portion is apertured. The strips 36 may ad
as an effective absence of such signals, are generated
address segments of the wire elements 10 not maintained
vantageously be affixed to an insulated sheet by means
of well known printed circuit techniques also in a man
ner similar to that referred to in connection with the
embodiment of FIG. 1. In the embodiment of FIG. 3
the strips 36 are depicted as being a?ixed to a translucent
insulated sheet 40 which is also doubled over to align the
notches and apertures and the apertures and notches of
in the opposite direction of magnetization by the ?elds pro
the opposing portions of the information strips 36. The
duced by the information strip 123 solid portions 16, are '
returned to the normal magnetic state by the bias supplied
from the source 21. A voltage signal of the opposite
polarity will be generated at this time also across the ends
strips 36 are also serially connected in a direct current
energizing circuit 38, which circuit is connected at one
end to the, ground bus 34 and at the other end to a
source of positive direct current 39. The latter current
across the ends of the wire memory elements 10 in ques
tion as a result. This absence of output signals is also
detected at the utilization circuits 25 as representative of
the storage in the information strip 123 at its apertures
15 of binary “O’s.”
At the termination of the interrogating pulse 28, the
is continuously applied during the operation of the mem~
of the Wire memory elements 10 in question. However,
these latter signals may be discriminated by the amplify 60 ory array of FIG. 3 in opposite directions in the two por
tions of the information strips 36. This follows from the
ing means 24. Interrogation of other word rows de?ned
serial connection of the latter strips in the circuit 38 with
by the remaining solenoids 11 is accomplished in a man
the current entering a strip 36 at its lower portion in one
ner similar to that just described for the word row de
?ned by the solenoid 113. In each case an interrogating
current pulse is selectively applied by the word selection
switch 26 to the solenoid 11 of the word row to be read.
65
direction and returning by way of the upper portion 36'
in the opposite direction.
The memory array of FIG. 3 is operated in a manner
Voltage signals generated across the ends of the wire mem
similar to that described for the embodiment of FIG. 1
ory elements 10 in each case will be representative of the
with the exception, as was mentioned previously herein,
binary information values stored in the notched and aper
that no continuous magnetic bias is necessary in con
tured information strips 12. The wire memory elements 70 nection with establishing a normal ?ux state in the ad
10 together with the energizing solenoids 11 thus effective
dress segments of the wire memory elements 30. An
ly become interrogating means for the information stored
information word is read out by applying an interrogating
in the information strips 12. In the foregoing illustra
current pulse from the word selection switch to one of the
tive read out operation a purely arbitrary sequence of
interrogating solenoids 31.‘ The binary values read out
information values was assumed to be stored in the in 75 are manifested by any ?ux switching, or absence of ?ux
aoeaaea
9
iii
switching, that occurs in the interrogated address seg
The ?elds ]‘5 will be of insufticient magnitude to induce a
flux in the wire memory element 302 and, in any event,
its effect is operative only at portions of the element 302
not comprising an information address segment. During
ments of the wire memory elements 3@ as these ?ux
switchings generate voltage signals across the ends of the
latter wire elements. The signals so generated are then
also transmitted via the amplifying means 32 to the in—
formation utilization circuits 33. The information repre
sentative ?elds generated by the information strips 36
a subsequent readout phase of operation a positive cur
rent pulse applied to the interrogating solenoid 312 gen
erates magnetic ?elds at each information address as
operate in a manner similar to that described for the‘
information strips 12 of FIG. 1, but achieve a more ad
represented by the lines of force is shown only in con
nection with the return 31' of the solenoid 312. The
vantageous flux switching control. The ?elds generated lt) interrogating ?elds ]‘6 are in opposition to the ?eld f4 main
at the reciprocally notched and apertured portions of
taining a magnetic ?ux in the information address seg
the information strip 36 and their effect on ?ux switching
ment and are of sufficient magnitude to cause a ?ux
in the address segments of the wire memory elements 30
switching in the latter segment. A resulting voltage
may be understood with reference to the cross-sectional
signal generated across the ends of the wire memory ele
views of FIGS. 4A and 4B.
" ment 3% is transmitted via an amplifying means 32 to
‘PKG. 4A shows a cross section of the memory array
of FIG. 3 at an address where a binary “0” is stored and
the information utilization circuits 33. This voltage sig
is taken along the lines 4A of that ?gure. The continu
ously applied positive direct current from the source 3h
generates magnetic ?elds represented in FIG. 4A by the
lines of force f1 and f2. In the lower portion of the in
formation strip 362 the current is caused to divide around
the aperture 37 thus causing the two ?elds f1. Whatever
in the information strip 362 at the interrogated informa
tion address. At the termination of the interrogating
current pulse the continuously applied ?eld 12; returns
effect the latter ?elds may have on the memory element
306 is immaterial since this effect is not within an address
nal is conventionally indicative of a binary “1” stored
the interrogated information address segment to its mag
netic information representative condition. As a result,
another voltage signal of opposite polarity is generated
across the ends of the wire memory element 302.
The
latter signal may also be discriminated by the amplifying
segment of the element 3%. In the upper portion 362'
means 32 and the information utilization circuits 33.
or" the information strip 362 the latter strip is notched at
Interrogation of each of the remaining information ad
the information address in question. Accordingly, a
dresses of the memory array of FIG. 3 is accomplished
single ?eld is generated opposite in polarity to that of
in a manner similar to that described for the information
the ?elds f1. This ?eld, represented in FIG. 4A by the a‘ addresses lying on the section lines 4A and 4B. The
lines of force f2, is su?iciently large to maintain the as
sequence of binary information values in each of the
sociated address segment of the wire memory element
366 in a downward magnetic direction as viewed in the
word rows of the memory array of FIG. 3, although simi
lar to that of the word rOWs depicted in the embodiment
drawing. When a positive interrogating current pulse is
applied from the word selection switch 35 to the inter
description only.
rogating solenoid 312 during a readout phase of opera
tion, a ?ux switching ?eld is developed around the latter
of FIG. 1, is also arbitrarily selected for purposes of
In each of the embodiments shown in the ?gures of the
drawing the component parts have been represented out
of scale and their relationship exaggerated also for pur
poses of illustration to gain a complete understanding of
solenoid at each of the information addresses. This
switching ?eld, represented in FIG. 4A only on the re‘
turn 31’ of the solenoid 312 by the lines of force 7% is 40 the organization of this invention and the manner of its
in a direction in which the address segment is already
practice. Further, what have been described are con
driven by the ?eld f2 of the information strip portion 362’.
sidered to be only illustrative embodiments of the princi
As a result of the applied interrogating drive, the ad
les of this invention and it is to be understood that vari
dress segment being interrogated is merely driven further
ous and numerous other arrangements may be devised by
into saturation with the further result that only a negligi
one skilled in the art Without departing from the spirit and
ble voltage signal is generated across the ends of the
scope of this invention.
memory element 306. This effective absence of a signal
What is claimed is:
condition on the latter element is transmitted via an
1. A memory circuit comprising a plurality of mag
amplifying means 32 to the information utilization cir
netic wire memory elements, an energizing winding means
cuit 33 as conventionally indicative that a binary “O” is
coupled to each of said wire memory elements and de?n
stored in the information strip 362 at the address being
ing a plurality of information address segments thereon,
interrogated. At the termination of the interrogating
current pulse an unappreciable ?ux excursion takes place
means including a pulse source for applying an energiz~
ing current pulse to said winding means for causing a
in the address segment being read as the ?ux of the latter
flux switching at each of said address segments of said
segment returns to the control of the ?eld being con 55 memory elements, a conductive information strip means
tinuously generated by the information strip 362. The
negligible Voltage signal of the opposite polarity generated
inductively coupled to each of said information segments
of said wire memory elements, said strip being oppositely
notched at particular ones of said information address
across the wire memory element 306 may be easily dis
segments representative of one information value and said
criminated by the amplifying means 32 and the utilization
circuits 33.
60 strip being apertured at others of said information address
FIG. 4B shows a cross section of the memory array of
FIG. 3 at an address where a binary “l” is stored and
segments representative of another information value,
means for applying a current to said information strip to
generate magnetic ?elds at the notched portions of said
is taken along the lines 43 of that ?gure. The continu
strip to prevent said flux switching at said particular ones
ously applied positive current from the source 39 gen
erates magnetic ?elds represented in FIG. 4B by the lines 65 of said information addresses, and means for detecting ?ux
switching in the wire memory elements having said others
of force 1%; and f5. In the lower portion of the informa
of said information address segments thereon.
tion strip 362 the current is here caused to follow the cen
tral solid portion thus causing a single ?eld 16;. The
2. A memory circuit as claimed in claim 1 also com
latter ?eld is operative at the associated information ad
prising means for magnetically biasing each of said plural
dress segment to induce a magnetic flux therein which is 70 ity of wire memory elements in a direction opposite to
the direction of said flux switching at said information ad~
maintained in preparation for a subsequent opposing
readout ?eld applied by the interrogating solenoid 312.
Fields f5 are generated by the upper portion 36’ of the
information strip 362 and speci?cally by the current di<
viding around the aperture 37 in the solid portions thereof.
dress segments.
3. A memory circuit comprising a plurality of wire
memory elements each having a magnetizable component
associated therewith, an interrogating winding means in
3,069,665
11
12
ductively coupled to said plurality of wire memory ele
conductive information strip means, said ?rst strip means
ments and de?ning a plurality of information address
segments thereon, means including a pulse source for ap
plying an energizing current pulse to said winding means
for causing a flux switching at each of said address seg
form a substantially narrower portion than the remainder
of said first strip means and having an aperture therein
ments of said memory elements, means for differently con
trolling'said ?uX switching at said information address seg
ments comprising an information strip means associated
with said winding means, said strip means being opposite
ly notched at particular ones of said information address
segments and said strip means being apertured at others
of said information address segments, and means for
applying a continuous current to said information strip
means; and means for detecting voltage signals generated
across the ends of each of said wire memory elements.
4. An information storage circuit comprising a ?rst and
second wire memory element, an energizing winding
means inductively coupled to each of said ?rst and said
second memory elements and de?ning a ?rst and a second
being notched at a ?rst information address thereon to
at a second information address thereon dividing said
?rst strip means into two branching portions, a second
conductive information strip means superimposed on said
?rst strip means, said second strip means being notched
at said second information address on said ?rst strip
means to form a substantially narrower portion than the
remainder of said second strip means and having an aper
ture therein at said ?rst information address of said ?rst
strip means dividing said second strip means into two
branching portions, means for applying a current of one
polarity to said ?rst strip means and of the opposite
polarity to said second strip means for generating a ?rst
magnetic ?eld in one direction at said ?rst information
address representative of one binary information value
and for generating a second magnetic ?eld in the oppo
information address segment thereon, respectively, means 20 site direction at said second information address repre
sentative of the other binary information value; and
for magnetically biasing said ?rst and said second memory
readout means for sensing said binary information values
element in one direction, means for applying an interroga
comprising a ?rst and a second magnetic wire memory
tion current pulse to said winding means for generating
magnetic ?elds operative at said ?rst and said second in
element, said ?rst element having an information address
segment thereof within said ?rst magnetic ?eld and said
formation address segments in the opposite direction, an
second element having an information address segment
information strip means inductively coupled to said ?rst
thereof within said second magnetic ?eld, an energizing
and said second information address segments, means for
winding means inductively coupled to said information
applying a current to said information strip means for
address segments of said ?rst and said second wire
generating magnetic ?elds operative in said opposite di
rection, said information strip means being cut away at 30 memory elements, means for applying'an interrogating
current pulse to said winding means for generating mag
portions thereof such that said last-mentioned ?elds are
netic ?elds operating on said ?rst and said second infor
operative on said ?rst wire memory element within the
mation address segments, and means for detecting ?ux
length of said ?rst information address segment representa
tive of a ?rst information value and operative on said sec
ond wire memory element outside the length of said sec
ond information address segment representative of a sec
ond information value.
5. An information storage circuit as claimed in claim
4 in which said information strip means is cut away to
a portion substantially narrower than the remainder of
said strip means at said ?rst information address segment
and said information strip means is divided to form two
portions thereof passing to either side of said second in
formation address segment.
changes in said ?rst and said second magnetic wire
memory elements.
9. A memory circuit comprising a plurality of mag
netic wire memory elements, an energizing winding means
coupled to each of Said wire memory elements and
de?ning a plurality of information address segments
thereon, means including a pulse source for applying an
energizing current pulse to said winding means for caus
ing a ?ux switching at each of said address segments of
said memory elements, a ?rst conductive information strip
means inductively coupled to each of said information
segments of said wire memory elements, said ?rst strip
means being oppositely notched at particular ones of
also comprising means for detecting voltage changes
said information address segments representative of one
across the ends of said ?rst and said second wire memory
information value and said ?rst strip means being aper
elements.
tured at others of said information address segments
7. An information storage circuit comprising a conduc
tive information strip means, said strip means being 50 representative of another information value, a second
conductive information strip means superimposed on
notched at a ?rst information address thereon to form a
substantially narrower portion than the remainder of
said ?rst strip means, said second strip means being
oppositely notched at said others of said information
said strip means and having an aperture therein at a sec
address segments and said second strip means being
ond information address thereon dividing said strip means
into two branching portions, means for applying a cur 55 apertured at said particular ones of said information
rent to said strip means for generating a ?rst magnetic
address segments, means for applying a current of one
polarity to said information strip means and of the oppo
?eld at said ?rst information address representative of one
site polarity to said second information strip means
binary information value and for generating a pair of
to generate magnetic ?elds in a direction opposite to that
second magnetic ?elds at said second information address
representative of the other binary information value; and 60 of said ?ux switching at said particular ones of said
information address segments and in the direction of
readout means for sensing said binary information values
said ?ux switching at said others of said information
comprising a ?rst and a second magnetic wire memory
address segments, and means for detecting ?ux switch
element, said ?rst element having an information address
ing in said wire memory elements.
segment thereof within said ?rst magnetic ?eld and said
second element having an information address segment 65
10. A memory circuit comprising a ?rst and a second
thereof between said pair of second magnetic ?elds, an
magnetic wire memory element, a ?rst conductive infor
energizing winding means inductively coupled to said in
mation strip means inductively coupled to said ?rst and
formation address segments of said ?rst and said second
said second wire memory elements, and de?ning a ?rst
wire memory elements, means for applying an interrogat
and a second information address segment thereon, re
ing current pulse to said winding means for generating
spectively, a second conductive information strip means
magnetic ?elds operating on said ?rst and said second in
superimposed on said ?rst strip means, means for apply
mg a current in one direction to said ?rst strip means
formation address segments, and means for detecting ?ux
changes in said ?rst and said second magnetic wire memory
and in the opposite direction to said second strip means
elements.
to generate magnetic information ?elds, said ?rst in
8. An information storage circuit comprising a ?rst 75 formation strip means being oppositely notched at said
6. An information storage circuit as claimed in claim 4
aoeaees
,
,
13
?rst address segment and apertured at said second address
segment and said second information strip means being
coupled to said memory element and de?ning a second
apertured at said ?rst address segment and oppositely
information address segment thereon, corresponding
?rst strips of said ?rst and said second pairs of strips
notched at said second address segment to induce a mag
netic ?ux in one direction in said ?rst address segment
having opposing notches in the edges thereof and an
aperture therein at said ?rst and said second information
:and induce a magnetic ?ux in the opposite direction
address segments, respectively, corresponding second
strips of said ?rst and said second pairs of strips having
apertures therein and opposing notches in the edges
in said second address segment, an interrogating winding
means inductively coupled to said ?rst and said second
address segments, means for applying an interrogating
current pulse to said winding means to induce a switch
ing ?ux in said one direction in said ?rst and said second
thereof at said ?rst and said second information address
segments, respectively, means for applying a current to
said corresponding ?rst strips in one direction and a
address segments, and means for detecting ?ux switching
in said ?rst and said second wire memory elements.
direction to induce a magnetic ?ux in one direction in said
current to said corresponding second strips in the opposite
prise folded portions of a single strip and said inter
rogating winding means comprises a ?at strip solenoid.
?rst address segment and to induce a magnetic flux in the
opposite direction in said second address segment, a
?rst and a second interrogating winding means inductively
coupled to said ?rst and said second address segments,
12. A memory circuit comprising a ?rst and a second
respectively, means for selectively applying interrogating
magnetic wire memory element, a conductive information
current pulses to said ?rst and said second winding means
11. A memory circuit as claimed in claim 10 in Which
said ?rst and said second information strip means com
strip inductively coupled to said ?rst and said second 20 to induce switching ?uxes in said one direction in said
magnetic wire memory elements and de?ning a ?rst and
a second information address segment thereon, respec
tively, means for applying a current to said information
?rst and said second information address segments, re
spectively, and means for detecting ?ux switching and the
absence of ?ux switching in said magnetic wire memory
element.
strip to generate magnetic information ?elds, said infor
18. An information storage circuit comprising a plural
mation strip being oppositely notched at said ?rst address 25
ity of magnetic wire memory elements, a conductive in
formation strip means inductively coupled to said wire
memory elements and de?ning information addresses
inductively coupled to said ?rst and said second address
thereon, means for applying a current to said strip means,
segments, means for applying an interrogating current 30 said strip means being oppositely notched at said informa_
pulse to said winding means to induce a switching ?ux
tion addresses to store one information value and being
apertured at said information addresses to store another
in said one direction in said ?rst and said second address
information value, an interrogating winding means also
segments, and means for detecting ?ux switching in said
inductively coupled to said wire memory elements at
?rst and said second wire memory elements.
said information addresses, means for applying an inter
13. A memory circuit as claimed in claim 12 also
rogating current pulse to said Winding means, and means
comprising means for inducing a biasing ?ux in said
for detecting ?ux switching in said plurality of wire
?rst and said second wire memory elements at said
memory elements.
address segments in a direction opposite to that of said
19. A magnetic memory array comprising a plurality
switching ?ux.
14. A memory circuit comprising a magnetic Wire 40 of magnetic wire memory elements, a plurality of con
ductive information strips inductively coupled to said
memory element, a ?rst conductive information strip in
plurality of wire memory elements and de?ning a co
ductively coupled to said memory element and de?ning
ordinate array of information address segments thereon,
a ?rst information address segment thereon, a second
said strips being ‘oppositely notched at said information
conductive information strip inductively coupled to said
segment and apertured at said second address segment
to induce a magnetic ?ux in one direction within said
?rst address segment, an interrogating Winding means
memory element and de?ning a second information ad
dress segment thereon, means for applying a current to
address segments to store one binary information value
said ?rst and second information strips to generate mag
to store the other binary information value, means for
‘applying a current to each of said plurality of information
netic information ?elds, said ?rst strip being oppositely
and being ‘apertured at said information address segments
strips in the same direction, a plurality of interrogating
notched at said ?rst address segment to induce a magnetic
flux in one direction within said ?rst address segment, 50 winding means inductively coupled to said plurality of
wire memory elements at said address segments corre
said second strip being apertured at said second address
sponding to said information strips, respectively, means
segment to divide said information ?elds from said sec
for selectively applying interrogating current pulses to
ond address segment, a ?rst and a second interrogating
said plurality of winding means, and means for detecting
winding means inductively coupled to said ?rst and said
second address segments, respectively, means for selec 55 voltage signals generated across the ends of said wire
memory elements.
tively applying an interrogating current pulse to said
20. A magnetic memory array as claimed in claim 19
?rst winding means to induce a switching magnetic ?eld
also comprising means for inducing a magnetic bias in
in said one direction at said ?rst address segment, and
each of said wire memory elements.
means for detecting ?ux switching and the absence of
21. A magnetic memory array comprising a plurality
?ux switching in said magnetic wire memory element.
of magnetic wire memory elements, a ?rst plurality of
15. A memory circuit as claimed in claim 14 also com
prising means for also selectively applying another in
terrogating pulse to said second winding means to induce
a switching ?ux in said one direction in said second ad
dress segment.
16. A memory circuit as claimed in claim 15 also
comprising means for inducing a magnetic bias in said
wire memory element at said ?rst and said second ad
dress segments in a direction opposite to said one direc
conductive information strips inductively coupled to said
plurality of wire memory elements and de?ning a coordi
nate array of information address segments thereon, a
65 second plurality of conductive information strips induc
tively coupled to said plurality of wire memory elements
at said information address segments, said ?rst strips being
oppositely notched and said second strips being apertured
at information address segments where one binary value is
tion.
70 stored and said ?rst strips being apertured and said second
strips being oppositely notched at information segments
17. A memory circuit comprising a magnetic wire
where the ‘other binary value is stored, means for apply
memory element, a ?rst pair of conductive information
ing a current to each of said ?rst strips in one direction
strips inductively coupled to said memory element and
and to each of said second strips in the opposite direction,
de?ning a ?rst'information ‘address segment thereon, a
second pair of conductive information strips inductively 75 a plurality of interrogating Winding means inductively
3,069,665
16
coupled to ‘said'plurality of wire memory elements at
said address segments corresponding to said information
strips, respectively, means for selectively applying inter
rogating current pulses ‘to said plurality of winding means,
and means for detecting voltage signals generated across
the ends of said wire memory elements.
22. A magnetic memory array comprising a plurality
of magnetic wire memory elements, a plurality of ?rst
conductive information strips inductively coupled to said
25. A magnetic memory array as claimed in claim 22
in which each of said plurality of conductive information
strips is carried on a removable insulating sheet.
26. A magnetic memory array as claimed- in claim 22
also comprising a plurality of second conductive informa
tion strips inductively coupled to said plurality of wire
memory elements and ‘superimposed on said plurality of
?rst information strips, respectively, said plurality of sec
ond information strips being apertured at ‘information
plurality of wire memory elements and de?ning a coordi 10 address segments where said one binary information‘value
is stored and oppositely notched at information address
nate array of information address segments thereon, said
strips being oppositely notched at information address
segments where one binary information value is stored
and being apertured at information address segments
where the other binary information value is stored, means 15
for applying a direct current to each of said plurality of
information strips in the same direction to generate
magnetic ?elds for inducing a magnetic flux in one direc
tion in the information address segments in which said
one binary information value is stored, a plurality of in
terrogating winding means inductively coupled to said
plurality of wire memory elements at said address seg
ments corresponding to said information strips, respec
tively, means for selectively applying an interrogating cur
rent pulse to a particular one of said winding means for 25
inducing a switching ?ux in the associated address seg
ments in said one direction, and means for detecting volt
age signals generated across the ends of said Wire memory
elements.
'
segments where said other binary information value is
stored, said plurality of second‘ information strips being
connected respectively to said plurality of ?rst informa
tion strips such that said direct current is applied to each
of said second information strips in the direction opposite
to that in which said direct current is applied to ‘said ?rst
strips to generate magnetic ?elds for inducing a magnetic
flux in the opposite direction in the information address
segments in which said other binary information value is
stored.
References Cited in the ?le of this patent
UNITED STATES PATENTS
2,740,110
Trimble _____________ __ Mar. 27,1956
2,769,873
2,931,023
Noregaard ____________ __ Nov. 6, 1956
Quade ________________ __ Mar. 29, 1960
1,105,870
France ________________ __ July 13, 1955
FOREIGN PATENTS
‘
23. A magnetic memory array as claimed in claim 22
also comprising means for inducing a magnetic bias in
each of said memory elements in said one direction.
24. A magnetic memory array as claimed in claim 22
in which each of said plurality of interrogating winding
means comprises a ?at strip solenoid.
OTHER REFERENCES
“Nondestructive Sensing,” etc., D. A. Buck et al., Com
munications and Electronics, pp. 822-830, January 1954.