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Abstract

Low-loss ion-exchanged sol-gel channel waveguides on silicon substrate were fabricated. Ion-exchangeable aluminosilicate glass film was fabricated by sol-gel technique. Ag+-Li+ thermal ion-exchange was used to achieve single mode channel waveguide. Propagation loss of 0.50 dB/cm and coupling loss of 0.76 dB/facet were measured by cutback method. A Y-branch power splitter was also fabricated. The results demonstrate that ion-exchange technique can be applied to prepare low-loss channel waveguides in thin film structures.

Fig. 3. The characteristic of channel waveguide. (a) Contours of the numerical simulation of mode intensity profile (dashed lines) and the near field intensity distribution at 1550 nm of the waveguide (solid lines), corresponding to 0.2, 0.4, 0.6 and 0.8 times the maximum mode intensity value. The background is the measured near field intensity of the channel waveguide; (b) Loss characteristic of the channel waveguide measured by cutback method at 1550 nm.