The HYM72V16M636B(L)T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package a 144 pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB. The HYM72V16M636B(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes memory. The HYM72V16M636B(L)T6 Series are fully synchronous operation referenced to the positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 02 1