Abstract

We present a study of photo‐ and electroluminescence of SiGe dots buried in Si and compare them with structures containing smooth SiGe layers. The SiGe dot structures were fabricated by low‐pressure chemical vapor deposition using the Stranski–Krastanov growth mode (island growth). We show that the localization of excitons in the dots leads to an increase of the luminescence efficiency at low excitation compared to smooth SiGe layers (e.g., quantum wells). At higher excitation the efficiency decreases which is attributed to nonradiative Auger recombination processes in the dots.