Abstract
We have investigated nanoparticles (NPs) formation in Si by 64Zn+ ion implantation at substrate temperature of 350 °C. Hot implantation was chosen to avoid amorphization of Si near‐surface layer. In as‐implanted samples the Zn crystal NPs were created. Then the samples were ...

Abstract
The effect of terbium (Tb) doping on the photoluminescence (PL) and cathodoluminescence (CL) spectra of amorphous aluminum nitride (a ‐AlN) and amorphous silicon nitride (a ‐SiN) thin films has been investigated for different temperature conditions. The samples were prepared by RF ...

Abstract
The first stages of growth of He‐based planar defects under H supply have been investigated in (001)‐oriented Si. The H atoms were introduced by implantation using the MIAMI facility. Implantations at different temperatures were conducted in the microscope chamber and thus the ...

Abstract
Experiments on chemical vapor deposition of W(CO)6‐derived films on silicon substrates were carried out at total pressure of 5‐10 Torr within the temperature range of 250‐350 °C; in Ar or H2 flow. Metallic, carbide and oxide phases composed the obtained films. Deposition in presence ...

Abstract
The behaviour of Fe atoms at the Si/SiO2 interface, as a modelisation of an involuntary Fe contamination before or during the oxidation process has been studied in Fe‐implanted wafers. As‐implanted and oxidized wafers were characterized by SIMS, APT, HR‐TEM and STEM‐HAADF. Successive ...

Abstract
The lowest temperature for initiating the film deposition was evaluated by in situ monitoring using a highly sensitive langasite crystal microbalance (LCM) in order to produce a thin boron doped silicon film using trichlorosilane gas and boron trichloride gas at low temperatures. The ...

Abstract
The development of a new process to obtain amorphous alumina thin films is presented. We show for the first time the direct liquid injection chemical vapor deposition (DLI CVD) of alumina thin films using dimethylaluminum isopropoxide (DMAI) precursor in two oxidizing atmospheres. At ...

Abstract
Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor grown by the low‐temperature molecular‐beam epitaxy technique on GaAs substrates have been investigated. High‐resolution X‐ray diffraction has been applied to characterize ...