Abstract

Er silicates have been fabricated on substrates by the sol-gel method. In contrast to Si(100) substrates, on which the phase in general crystallizes, the with the photoluminescence(PL) main peak at 1531 nm formed at . The integrated PL intensity of the phase was about five to ten times stronger than that of the phase, and the phase showed a relatively long decay time in contrast to several tens of microseconds of the phase. Excess O from layer may lead to the formation of the phase.

We thank Professor Dr. Albert Polman for his valuable discussions. The work was supported in part by the Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture of Japan (Grant Nos. 19360005 and 1907091 and on Priority Areas “Innovation for New Generation Optical Communication”).