The goal of this research program is to demonstrate processing techniques which can eliminate the need for high thermal cycling of silicon wafers in fabricating very large scale integrated (VLSI) devices. Maintaining low temperatures for all processing reduces plastic deformation, diffusion and autodoping problems which would limit the application of submicron geometry design rules. Pulsed electron beam surface heating of the top micron of material is being investigated for annealing of ion-implantation damage and epitaxial regrowth of low temperature chemical-deposition (CVD) polycrystalline silicon films. Research to date has demonstrated the epitaxial regrowth of 0.1 to 0.5 micron films deposited at 600 to 800 C, with and without etching the native oxide on the substrate.