DALLAS DS18S20

PRELIMINARY
DS18S20
High Precision
®
1-Wire Digital Thermometer
www.dalsemi.com
Unique 1–Wire interface requires only one
port pin for communication
Multidrop capability simplifies distributed
temperature sensing applications
Requires no external components
Can be powered from data line. Power supply
range is 3.0V to 5.5V
Zero standby power required
Measures temperatures from –55°C to
+125°C. Fahrenheit equivalent is –67°F to
+257°F
±0.5°C accuracy from –10°C to +85°C
Temperature is read as a 9–bit digital value
Converts temperature to digital word in
750 ms (max.)
User–definable, nonvolatile temperature
alarm settings
Alarm search command identifies and
addresses devices whose temperature is
outside of programmed limits (temperature
alarm condition)
Functionally compatible with DS1820 1-Wire
digital thermometer
Applications include thermostatic controls,
industrial systems, consumer products,
thermometers, or any thermally sensitive
system
PIN ASSIGNMENT
BOTTOM VIEW
DALLAS
DS18S20
1 2 3
1 2 3
DS18S20 To-92
Package
GND
DQ
VDD
FEATURES
NC
1
8
NC
NC
2
7
NC
VDD
3
6
NC
DQ
4
5
GND
DS18S20Z
8-Pin SOIC (150 mil)
PIN DESCRIPTION
GND
DQ
VDD
NC
-
Ground
Data In/Out
Power Supply Voltage
No Connect
DESCRIPTION
The DS18S20 Digital Thermometer provides 9–bit temperature readings which indicate the temperature
of the device.
Information is sent to/from the DS18S20 over a 1–Wire interface, so that only one wire (and ground)
needs to be connected from a central microprocessor to a DS18S20. Power for reading, writing, and
performing temperature conversions can be derived from the data line itself with no need for an external
power source.
Because each DS18S20 contains a unique silicon serial number, multiple DS18S20s can exist on the
same 1–Wire bus. This allows for placing temperature sensors in many different places. Applications
where this feature is useful include HVAC environmental controls, sensing temperatures inside buildings,
equipment or machinery, and process monitoring and control.
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050400
DS18S20
DETAILED PIN DESCRIPTION
PIN
8-PIN SOIC
5
4
PIN
TO92
1
2
SYMBOL
GND
DQ
DESCRIPTION
Ground.
Data Input/Output pin. For 1-Wire operation: Open drain.
(See “Parasite Power” section.)
3
3
VDD
Optional VDD pin. See “Parasite Power” section for details of
connection. VDD must be grounded for operation in parasite
power mode.
DS18S20Z (8-pin SOIC): All pins not specified in this table are not to be connected.
OVERVIEW
The block diagram of Figure 1 shows the major components of the DS18S20. The DS18S20 has three
main data components: 1) 64–bit lasered ROM, 2) temperature sensor, 3) nonvolatile temperature alarm
triggers TH and TL. The device derives its power from the 1–Wire communication line by storing energy
on an internal capacitor during periods of time when the signal line is high and continues to operate off
this power source during the low times of the 1–Wire line until it returns high to replenish the parasite
(capacitor) supply. As an alternative, the DS18S20 may also be powered from an external 3 volt – 5 volt
supply.
Communication to the DS18S20 is via a 1–Wire port. With the 1–Wire port, the memory and control
functions will not be available before the ROM function protocol has been established. The master must
first provide one of five ROM function commands: 1) Read ROM, 2) Match ROM, 3) Search ROM, 4)
Skip ROM, or 5) Alarm Search. These commands operate on the 64–bit lasered ROM portion of each
device and can single out a specific device if many are present on the 1–Wire line as well as indicate to
the bus master how many and what types of devices are present. After a ROM function sequence has
been successfully executed, the memory and control functions are accessible and the master may then
provide any one of the six memory and control function commands.
One control function command instructs the DS18S20 to perform a temperature measurement. The result
of this measurement will be placed in the DS18S20’s scratch-pad memory, and may be read by issuing a
memory function command which reads the contents of the scratchpad memory. The temperature alarm
triggers TH and TL consist of 1-byte EEPROM each. If the alarm search command is not applied to the
DS18S20, these registers may be used as general purpose user memory. Writing TH and TL is done
using a memory function command. Read access to these registers is through the scratchpad. All data is
read and written least significant bit first.
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DS18S20
DS18S20 BLOCK DIAGRAM Figure 1
MEMORY AND
CONTROL LOGIC
DQ
INTERNAL VDD
64-BIT ROM
AND
1-WIRE PORT
SCRATCHPAD
TEMPERATURE
SENSOR
HIGH TEMPERATURE
TRIGGER, TH
VDD
POWER
SUPPLY
SENSE
8-BIT CRC
GENERATOR
LOW TEMPERATURE
TRIGGER, TH
PARASITE POWER
The block diagram (Figure 1) shows the parasite-powered circuitry. This circuitry “steals” power
whenever the DQ or VDD pins are high. DQ will provide sufficient power as long as the specified timing
and voltage requirements are met (see the section titled “1–Wire Bus System”). The advantages of
parasite power are twofold: 1) by parasiting off this pin, no local power source is needed for remote
sensing of temperature, and 2) the ROM may be read in absence of normal power.
In order for the DS18S20 to be able to perform accurate temperature conversions, sufficient power must
be provided over the DQ line when a temperature conversion is taking place. Since the operating current
of the DS18S20 is up to 1.5 mA, the DQ line will not have sufficient drive due to the 5k pullup resistor.
This problem is particularly acute if several DS18S20s are on the same DQ and attempting to convert
simultaneously.
There are two ways to assure that the DS18S20 has sufficient supply current during its active conversion
cycle. The first is to provide a strong pullup on the DQ line whenever temperature conversions or copies
to the E2 memory are taking place. This may be accomplished by using a MOSFET to pull the DQ line
directly to the power supply as shown in Figure 2. The DQ line must be switched over to the strong
pull-up within 10 µs maximum after issuing any protocol that involves copying to the E2 memory or
initiates temperature conversions. When using the parasite power mode, the VDD pin must be tied to
ground.
Another method of supplying current to the DS18S20 is through the use of an external power supply tied
to the VDD pin, as shown in Figure 3. The advantage to this is that the strong pullup is not required on the
DQ line, and the bus master need not be tied up holding that line high during temperature conversions.
This allows other data traffic on the 1–Wire bus during the conversion time. In addition, any number of
DS18S20s may be placed on the 1–Wire bus, and if they all use external power, they may all
simultaneously perform temperature conversions by issuing the Skip ROM command and then issuing the
Convert T command. Note that as long as the external power supply is active, the GND pin may not be
floating.
The use of parasite power is not recommended above 100°C, since it may not be able to sustain
communications given the higher leakage currents the DS18S20 exhibits at these temperatures. For
applications in which such temperatures are likely, it is strongly recommended that VDD be applied to the
DS18S20.
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DS18S20
For situations where the bus master does not know whether the DS18S20s on the bus are parasite
powered or supplied with external VDD, a provision is made in the DS18S20 to signal the power supply
scheme used. The bus master can determine if any DS18S20s are on the bus which require the strong
pullup by sending a Skip ROM protocol, then issuing the read power supply command. After this
command is issued, the master then issues read time slots. The DS18S20 will send back “0” on the
1-Wire bus if it is parasite powered; it will send back a “1” if it is powered from the VDD pin. If the
master receives a “0,” it knows that it must supply the strong pullup on the DQ line during temperature
conversions. See “Memory Command Functions” section for more detail on this command protocol.
STRONG PULL-UP FOR SUPPLYING DS18S20 DURING TEMPERATURE
CONVERSION Figure 2
+3V - +5V
DS18S20
+3V - +5V
GND
µP
VDD
4.7k
I/O
USING VDD TO SUPPLY TEMPERATURE CONVERSION CURRENT Figure 3
TO OTHER
1-WIRE DEVICES
DS18S20
+3V - +5V
GND
4.7k
µP
VDD
EXTERNAL +3V - +5V
SUPPLY
I/O
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DS18S20
OPERATION – MEASURING TEMPERATURE
The core functionality of the DS18S20 is its direct-to-digital temperature sensor. The direct readout of
temperature data is 9 bits wide, equating to a resolution of 0.5°C; if higher resolution is desired, an
algorithm is described later in this section to achieve that need. Following the issuance of the Convert T
[44h] command, a temperature conversion is performed and the thermal data is stored in the scratchpad
memory in a 16-bit, sign-extended two’s complement format. The temperature information can be
retrieved over the 1-Wire interface by issuing a Read Scratchpad [BEh] command once the conversion
has been performed. The data is transferred over the 1-Wire bus, LSB first. The MSB of the temperature
register contains the “sign” (S) bit, denoting whether the temperature is positive or negative.
Table 2 describes the exact relationship of output data to measured. For Fahrenheit usage, a lookup table
or conversion routine must be used.
Temperature/Data Relationships Table 2
26
25
24
22
21
20 2-1
(unit = °C)
MSb
S
23
S
S
S
S
S
LSB
LSb
S
S
TEMPERATURE
DIGITAL OUTPUT
(Binary)
+85°C
+125°C
+25.0°C
+0.5°C
0°C
-0.5°C
-25.0°C
-55°C
0000 0101 0101 0000
0000 0000 1111 1010
0000 0000 0011 0010
0000 0000 0000 0001
0000 0000 0000 0000
1111 1111 1111 1111
1111 1111 1100 1110
1111 1111 1001 0010
MSB
DIGITAL
OUTPUT
(Hex)
0550h*
00FAh
0032h
0001h
0000h
FFFFh
FFCEh
FF92h
*The power on reset register value is +85°C
Higher resolutions may be obtained by the following procedure. First, read the temperature,
COUNT_REMAIN, and COUNT_PER_C registers from the scratchpad. Truncate the 0.5°C bit (the
LSB) from the temperature value. This value is TEMP_READ. The actual temperature may then be
calculated by using the following:
TEMPERATURE = TEMP _ READ − 0.25 +
COUNT _ PER _ C − COUNT _ REMAIN
COUNT _ PER _ C
OPERATION – ALARM SIGNALING
After the DS18S20 has performed a temperature conversion, the temperature value is compared to the
trigger values stored in TH and TL. Since these registers are 8–bit only, the 0.5°C bit is ignored for
comparison. The most significant bit of TH or TL directly corresponds to the sign bit of the 16–bit
temperature register. If the result of a temperature measurement is higher than TH or lower than TL, an
alarm flag inside the device is set. This flag is updated with every temperature measurement. As long as
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DS18S20
the alarm flag is set, the DS18S20 will respond to the alarm search command. This allows many
DS18S20s to be connected in parallel doing simultaneous temperature measurements. If somewhere the
temperature exceeds the limits, the alarming device(s) can be identified and read immediately without
having to read non–alarming devices.
64-BIT LASERED ROM
Each DS18S20 contains a unique ROM code that is 64–bits long. The first 8 bits are a 1–Wire family
code (DS18S20 code is 10h). The next 48 bits are a unique serial number. The last 8 bits are a CRC of
the first 56 bits. (See Figure 4.) The 64–bit ROM and ROM Function Control section allow the DS18S20
to operate as a 1–Wire device and follow the 1–Wire protocol detailed in the section “1–Wire Bus
System.” The functions required to control sections of the DS18S20 are not accessible until the ROM
function protocol has been satisfied. This protocol is described in the ROM function protocol flowchart
(Figure 5). The 1–Wire bus master must first provide one of five ROM function commands: 1) Read
ROM, 2) Match ROM, 3) Search ROM, 4) Skip ROM, or 5) Alarm Search. After a ROM functions
sequence has been successfully executed, the functions specific to the DS18S20 are accessible and the
bus master may then provide one of the six memory and control function commands.
CRC GENERATION
The DS18S20 has an 8–bit CRC stored in the most significant byte of the 64–bit ROM. The bus master
can compute a CRC value from the first 56–bits of the 64–bit ROM and compare it to the value stored
within the DS18S20 to determine if the ROM data has been received error–free by the bus master. The
equivalent polynomial function of this CRC is:
CRC = X8 + X5 + X4 + 1
The DS18S20 also generates an 8–bit CRC value using the same polynomial function shown above and
provides this value to the bus master to validate the transfer of data bytes. In each case where a CRC is
used for data transfer validation, the bus master must calculate a CRC value using the polynomial
function given above and compare the calculated value to either the 8–bit CRC value stored in the 64–bit
ROM portion of the DS18S20 (for ROM reads) or the 8–bit CRC value computed within the DS18S20
(which is read as a ninth byte when the scratchpad is read). The comparison of CRC values and decision
to continue with an operation are determined entirely by the bus master. There is no circuitry inside the
DS18S20 that prevents a command sequence from proceeding if the CRC stored in or calculated by the
DS18S20 does not match the value generated by the bus master.
The 1–Wire CRC can be generated using a polynomial generator consisting of a shift register and XOR
gates as shown in Figure 6. Additional information about the Dallas 1–Wire Cyclic Redundancy Check is
available in Application Note 27 entitled “Understanding and Using Cyclic Redundancy Checks with
Dallas Semiconductor Touch Memory Products.”
The shift register bits are initialized to “0”. Then starting with the least significant bit of the family code,
one bit at a time is shifted in. After the eighth bit of the family code has been entered, then the serial
number is entered. After the 48th bit of the serial number has been entered, the shift register contains the
CRC value. Shifting in the 8 bits of CRC should return the shift register to all “0s”.
64-BIT LASERED ROM Figure 4
8-BIT CRC CODE
MSB
48-BIT SERIAL NUMBER
LSB
MSB
LSB
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8-BIT FAMILY CODE (10h)
MSB
LSB
DS18S20
ROM FUNCTIONS FLOW CHART Figure 5
MASTER TX
RESET PULSE
DS18S20 TX
PRESENCE
PULSE
MASTER TX ROM
FUNCTION COMMAND
33h
READ ROM
COMMAND
N
55h
MATCH ROM
COMMAND
Y
Y
DS18S20 TX
FAMILY CODE
1 BYTE
F0h
N
SEARCH ROM
COMMAND
N
Y
ECh
ALARM
SEARCH
COMMAND
Y
ALARM
CONDITION ?
DS18S20 TX BIT 0
DS18S20 TX BIT 0
MASTER TX BIT 0
N
N
BIT 0
MATCH?
BIT 0
MATCH?
Y
DS18S20 TX
CRC BYTE
Y
DS18S20 TX BIT 1
MASTER TX
BIT 1
DS18S20 TX BIT 1
MASTER TX BIT 1
N
N
BIT 1
MATCH?
BIT 1
MATCH?
Y
Y
DS18S20 TX BIT 63
MASTER TX
BIT 63
DS18S20 TX BIT 63
MASTER TX BIT 63
N
N
BIT 63
MATCH?
BIT 63
MATCH?
Y
Y
MASTER TX MEMORY OR CONTROL
FUNCTION COMMAND
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CCh
SKIP ROM
COMMAND
Y
N
MASTER TX
BIT 0
Y
DS18S20 TX
SERIAL NUMBER
6 BYTES
N
N
DS18S20
1-WIRE CRC CODE Figure 6
INPUT
XOR
XOR
XOR
(MSB)
(LSB)
MEMORY
The DS18S20’s memory is organized as shown in Figure 7. The memory consists of a scratchpad RAM
and a nonvolatile, electrically erasable (E2) RAM, which stores the high and low temperature triggers, TH
and TL. The scratchpad helps insure data integrity when communicating over the 1–Wire bus. Data is
first written to the scratchpad where it can be read back. After the data has been verified, a copy
scratchpad command will transfer the data to the nonvolatile (E2) RAM. This process insures data
integrity when modifying the memory. The DS18S20 EEPROM is rated for a minimum of 50,000 writes
and 10 years data retention at T = +55°C.
The scratchpad is organized as 8 bytes of memory. The first 2-bytes contain the measured temperature
information. The third and fourth bytes are volatile copies of TH and TL and are refreshed with every
power–on reset. The next 2 bytes are not used; upon reading back, however, they will appear as all logic
“1s”. The seventh and eighth bytes are count registers, which may be used in obtaining higher
temperature resolution (see “Operation–measuring Temperature” section). There is a ninth byte which
may be read with a Read Scratchpad command. This byte contains a cyclic redundancy check (CRC)
byte which is the CRC over all of the 8 previous bytes. This CRC is implemented in the fashion
described in the section titled “CRC Generation."
DS18S20 MEMORY MAP Figure 7
SCRATCHPAD
E2 RAM
BYTE
TEMPERATURE LSB
0
TEMPERATURE MSB
1
TH/USER BYTE 1
2
TH/USER BYTE 1
TL/USER BYTE 2
3
TL/USER BYTE 2
RESERVED
4
RESERVED
5
COUNT REMAIN
6
COUNT PER °C
7
CRC
8
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DS18S20
1-WIRE BUS SYSTEM
The 1–Wire bus is a system which has a single bus master and one or more slaves. The DS18S20
behaves as a slave. The discussion of this bus system is broken down into three topics: hardware
configuration, transaction sequence, and 1–Wire signaling (signal types and timing).
HARDWARE CONFIGURATION
The 1–Wire bus has only a single line by definition; it is important that each device on the bus be able to
drive it at the appropriate time. To facilitate this, each device attached to the 1–Wire bus must have open
drain or 3–state outputs. The 1–Wire port of the DS18S20 (DQ pin) is open drain with an internal circuit
equivalent to that shown in Figure 8. A multidrop bus consists of a 1–Wire bus with multiple slaves
attached. The 1–Wire bus requires a pullup resistor of approximately 5 kΩ.
HARDWARE CONFIGURATION Figure 8
+3V - +5V
DS18S20 1-WIRE PORT
BUS MASTER
4.7k
RX
RX
5 µA
Typ.
TX
100Ω
Ω
MOSFET
TX
RX = RECEIVE
TX = TRANSMIT
The idle state for the 1–Wire bus is high. If for any reason a transaction needs to be suspended, the bus
MUST be left in the idle state if the transaction is to resume. Infinite recovery time can occur between
bits so long as the 1–Wire bus is in the inactive (high) state during the recovery period. If this does not
occur and the bus is left low for more than 480 µs, all components on the bus will be reset.
TRANSACTION SEQUENCE
The protocol for accessing the DS18S20 via the 1–Wire port is as follows:
•
Initialization
•
ROM Function Command
•
Memory Function Command
•
Transaction/Data
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DS18S20
INITIALIZATION
All transactions on the 1–Wire bus begin with an initialization sequence. The initialization sequence
consists of a reset pulse transmitted by the bus master followed by presence pulse(s) transmitted by the
slave(s).
The presence pulse lets the bus master know that the DS18S20 is on the bus and is ready to operate. For
more details, see the “1–Wire Signaling” section.
ROM FUNCTION COMMANDS
Once the bus master has detected a presence, it can issue one of the five ROM function commands. All
ROM function commands are 8 bits long. A list of these commands follows (refer to flowchart in
Figure 5):
Read ROM [33h]
This command allows the bus master to read the DS18S20’s 8–bit family code, unique 48–bit serial
number, and 8–bit CRC. This command can only be used if there is a single DS18S20 on the bus. If
more than one slave is present on the bus, a data collision will occur when all slaves try to transmit at the
same time (open drain will produce a wired AND result).
Match ROM [55h]
The match ROM command, followed by a 64–bit ROM sequence, allows the bus master to address a
specific DS18S20 on a multidrop bus. Only the DS18S20 that exactly matches the 64–bit ROM sequence
will respond to the following memory function command. All slaves that do not match the 64–bit ROM
sequence will wait for a reset pulse. This command can be used with a single or multiple devices on the
bus.
Skip ROM [CCh]
This command can save time in a single drop bus system by allowing the bus master to access the
memory functions without providing the 64–bit ROM code. If more than one slave is present on the bus
and a Read command is issued following the Skip ROM command, data collision will occur on the bus as
multiple slaves transmit simultaneously (open drain pulldowns will produce a wired AND result).
Search ROM [F0h]
When a system is initially brought up, the bus master might not know the number of devices on the
1-Wire bus or their 64–bit ROM codes. The search ROM command allows the bus master to use a
process of elimination to identify the 64–bit ROM codes of all slave devices on the bus.
Alarm Search [ECh]
The flowchart of this command is identical to the Search ROM command. However, the DS18S20 will
respond to this command only if an alarm condition has been encountered at the last temperature
measurement. An alarm condition is defined as a temperature higher than TH or lower than TL. The
alarm condition remains set as long as the DS18S20 is powered up, or until another temperature
measurement reveals a non–alarming value. For alarming, the trigger values stored in EEPROM are
taken into account. If an alarm condition exists and the TH or TL settings are changed, another
temperature conversion should be done to validate any alarm conditions.
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DS18S20
Example of a ROM Search
The ROM search process is the repetition of a simple three–step routine: read a bit, read the complement
of the bit, then write the desired value of that bit. The bus master performs this simple, three–step routine
on each bit of the ROM. After one complete pass, the bus master knows the contents of the ROM in one
device. The remaining number of devices and their ROM codes may be identified by additional passes.
The following example of the ROM search process assumes four different devices are connected to the
same 1–Wire bus. The ROM data of the four devices is as shown:
ROM1
ROM2
ROM3
ROM4
00110101...
10101010...
11110101...
00010001...
The search process is as follows:
1. The bus master begins the initialization sequence by issuing a reset pulse. The slave devices respond
by issuing simultaneous presence pulses.
2. The bus master will then issue the Search ROM command on the 1–Wire bus.
3. The bus master reads a bit from the 1–Wire bus. Each device will respond by placing the value of the
first bit of their respective ROM data onto the 1–Wire bus. ROM1 and ROM4 will place a 0 onto the
1–Wire bus, i.e., pull it low. ROM2 and ROM3 will place a 1 onto the 1–Wire bus by allowing the
line to stay high. The result is the logical AND of all devices on the line, therefore the bus master
sees a 0. The bus master reads another bit. Since the Search ROM data command is being executed,
all of the devices on the 1–Wire bus respond to this second read by placing the complement of the
first bit of their respective ROM data onto the 1–Wire bus. ROM1 and ROM4 will place a 1 onto the
1–Wire, allowing the line to stay high. ROM2 and ROM3 will place a 0 onto the 1–Wire, thus it will
be pulled low. The bus master again observes a 0 for the complement of the first ROM data bit. The
bus master has determined that there are some devices on the 1–Wire bus that have a 0 in the first
position and others that have a 1.
The data obtained from the two reads of the three–step routine have the following interpretations:
00
01
10
11
There are still devices attached which have conflicting bits in this position.
All devices still coupled have a 0–bit in this bit position.
All devices still coupled have a 1–bit in this bit position.
There are no devices attached to the 1–Wire bus.
4. The bus master writes a 0. This deselects ROM2 and ROM3 for the remainder of this search pass,
leaving only ROM1 and ROM4 connected to the 1–Wire bus.
5. The bus master performs two more reads and receives a 0–bit followed by a 1–bit. This indicates that
all devices still coupled to the bus have 0s as their second ROM data bit.
6. The bus master then writes a 0 to keep both ROM1 and ROM4 coupled.
7. The bus master executes two reads and receives two 0–bits. This indicates that both 1–bits and 0–bits
exist as the third bit of the ROM data of the attached devices.
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DS18S20
8. The bus master writes a 0–bit.
connected.
This deselects ROM1, leaving ROM4 as the only device still
9. The bus master reads the remainder of the ROM bits for ROM4 and continues to access the part if
desired. This completes the first pass and uniquely identifies one part on the 1–Wire bus.
10. The bus master starts a new ROM search sequence by repeating steps 1 through 7.
11. The bus master writes a 1–bit. This decouples ROM4, leaving only ROM1 still coupled.
12. The bus master reads the remainder of the ROM bits for ROM1 and communicates to the underlying
logic if desired. This completes the second ROM search pass, in which another of the ROMs was
found.
13. The bus master starts a new ROM search by repeating steps 1 through 3.
14. The bus master writes a 1–bit. This deselects ROM1 and ROM4 for the remainder of this search pass,
leaving only ROM2 and ROM3 coupled to the system.
15. The bus master executes two Read time slots and receives two 0s.
16. The bus master writes a 0–bit. This decouples ROM3, leaving only ROM2.
17. The bus master reads the remainder of the ROM bits for ROM2 and communicates to the underlying
logic if desired. This completes the third ROM search pass, in which another of the ROMs was
found.
18. The bus master starts a new ROM search by repeating steps 13 through 15.
19. The bus master writes a 1–bit. This decouples ROM2, leaving only ROM3.
20. The bus master reads the remainder of the ROM bits for ROM3 and communicates to the underlying
logic if desired. This completes the fourth ROM search pass, in which another of the ROMs was
found.
NOTE:
The bus master learns the unique ID number (ROM data pattern) of one 1–Wire device on each ROM
Search operation. The time required to derive the part’s unique ROM code is:
960 µs + (8 + 3 x 64) 61 µs = 13.16 ms
The bus master is therefore capable of identifying 75 different 1–Wire devices per second.
I/O SIGNALING
The DS18S20 requires strict protocols to insure data integrity. The protocol consists of several types of
signaling on one line: reset pulse, presence pulse, write 0, write 1, read 0, and read 1. All of these signals,
with the exception of the presence pulse, are initiated by the bus master.
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DS18S20
The initialization sequence required to begin any communication with the DS18S20 is shown in Figure
10. A reset pulse followed by a presence pulse indicates the DS18S20 is ready to send or receive data
given the correct ROM command and memory function command.
The bus master transmits (TX) a reset pulse (a low signal for a minimum of 480 ms). The bus master
then releases the line and goes into a receive mode (RX). The 1–Wire bus is pulled to a high state via the
5k pullup resistor. After detecting the rising edge on the DQ pin, the DS18S20 waits 15–60 µs and then
transmits the presence pulse (a low signal for 60–240 µs).
MEMORY COMMAND FUNCTIONS
The following command protocols are summarized in Table 2, and by the flowchart of Figure 9.
Write Scratchpad [4Eh]
This command writes to the scratchpad of the DS18S20, starting at the TH register. The next 2 bytes
written will be saved in scratchpad memory at address locations 2 and 3. Writing may be terminated at
any point by issuing a reset.
Read Scratchpad [BEh]
This command reads the contents of the scratchpad. Reading will commence at byte 0, and will continue
through the scratchpad until the ninth (byte 8, CRC) byte is read. If not all locations are to be read, the
master may issue a reset to terminate reading at any time.
Copy Scratchpad [48h]
This command copies the scratchpad into the E2 memory of the DS18S20, storing the temperature trigger
bytes in nonvolatile memory. If the bus master issues read time slots following this command, the
DS18S20 will output 0 on the bus as long as it is busy copying the scratchpad to E2; it will return a 1
when the copy process is complete. If parasite-powered, the bus master has to enable a strong pullup for
at least 10 ms immediately after issuing this command. The DS18S20 EEPROM is rated for a minimum
of 50,000 writes and 10 years data retention at T = +55°C.
Convert T [44h]
This command begins a temperature conversion. No further data is required. The temperature
conversion will be performed and then the DS18S20 will remain idle. If the bus master issues read time
slots following this command, the DS18S20 will output 0 on the bus as long as it is busy making a
temperature conversion; it will return a 1 when the temperature conversion is complete. If parasitepowered, the bus master has to enable a strong pullup for a time period greater than tconv immediately
after issuing this command.
Recall E2 [B8h]
This command recalls the temperature trigger values stored in E2 to the scratchpad. This recall operation
happens automatically upon power–up to the DS18S20 as well, so valid data is available in the scratchpad
as soon as the device has power applied. With every read data time slot issued after this command has
been sent, the device will output its temperature converter busy flag: 0=busy, 1=ready.
Read Power Supply [B4h]
With every read data time slot issued after this command has been sent to the DS18S20, the device will
signal its power mode: 0=parasite power, 1=external power supply provided.
13 of 27
DS18S20
MEMORY FUNCTIONS FLOW CHART Figure 9
MASTER TX MEMORY OR
CONTROL COMMAND
4Eh
WRITE
SCRATCHPAD
?
BEh
READ
SCRATCHPAD
?
N
Y
N
Y
DS18S20 SETS ADDRESS
COUNTER TO 2
DS18S20 SETS ADDRESS
COUNTER TO 0
MASTER TX DATA BYTE
TO SCRATCHPAD
MASTER RX DATA
FROM SCRATCHPAD
Y
Y
MASTER
TX RESET
?
MASTER
TX RESET
?
N
N
ADDRESS
=3
?
Y
ADDRESS
=7
?
Y
N
N
DS18S20 TX
DS18S20 INCREMENTS
SERIAL NUMBER
ADDRESS
6 BYTES
DS18S20 INCREMENTS
ADDRESS
N
MASTER RX 8-BIT
CRC OF DATA
MASTER
TX RESET
?
Y
MASTER
TX RESET
?
N
MASTER RX “1s”
DS18S20 TX
PRESENCE PULSE
14 of 27
Y
DS18S20
MEMORY FUNCTIONS FLOW CHART Figure 9 (cont’d)
48h
COPY
SCRATCHPAD
?
44h
CONVERT
TEMPERATURE
N
Y
Y
N
PARASITE
POWER
?
N
Y
N
PARASITE
POWER
?
Y
MASTER ENABLES
STRONG PULLUP FOR
10ms
MASTER ENABLES
STRONG PULL-UP
DS18S20 CONVERTS
TEMPERATURE
MASTER DISABLES
STRONG PULLUP
DS18S20 BEGINS
CONVERSION
MASTER DISABLES
STRONG PULL-UP
Y
Y
MASTER TX
RESET
?
MASTER TX
RESET
?
N
N
MASTER
RX “1”S
NONVOLATILE
MEMORY
BUSY
?
N
Y
N
MASTER
RX “0”S
MASTER
RX “1”S
15 of 27
DEVICE BUSY
CONVERTING
TEMPERATURE
?
Y
MASTER
RX “0”S
DS18S20
MEMORY FUNCTIONS FLOW CHART Figure 9 (cont’d)
B8h
RECALL
E2
?
Y
B4h
READ
POWERSUPPLY
?
N
N
Y
DS18S20 RECALLS
FROM E2 PROM
Y
Y
MASTER TX
RESET
?
MASTER TX
RESET
?
N
N
N
DEVICE
Y
BUSY CONVERTING
TEMPERATURE
?
N
PARASITE
POWERED
?
Y
MASTER
TX RESET
?
Y
MASTER
RX “1”S
MASTER
RX “1”S
MASTER
RX “0”S
16 of 27
MASTER
RX “0”S
N
DS18S20
INITIALIZATION PROCEDURE “RESET AND PRESENCE PULSES” Figure 10
Master TX "reset pulse"
480 µs minmum
960 µs maximum
Master RX
480 µs minmum
DS18S20 TX
waits
15-60 µs
DS18S20 TX
"presence Pulse"
60-240 µs
VCC
1-WIRE
BUS
GND
LINE TYPE LEGEND
Bus master active low
DS18S20 active low
Both bus master and
DS18S20 active low
Resistor pull-up
DS18S20 COMMAND SET Table 2
1-WIRE BUS
AFTER ISSUING
INSTRUCTION
DESCRIPTION
PROTOCOL
PROTOCOL
TEMPERATURE CONVERSION COMMANDS
Convert T
Initiates temperature
44h
<read temperature busy
conversion.
status>
MEMORY COMMANDS
Read Scratchpad
Reads bytes from
BEh
<read data up to 9 bytes>
scratchpad and reads
CRC byte.
Write Scratchpad
Writes bytes into
4Eh
<write data into 2 bytes
scratchpad at addresses 2
at addr. 2 and addr 3>
and 3 (TH and TL
temperature triggers).
Copy Scratchpad
Copies scratchpad into
48h
<read copy status>
nonvolatile memory
(addresses 2 and 3 only).
2
Recall E
Recalls values stored in
B8h
<read temperature busy
nonvolatile memory into
status>
scratchpad (temperature
triggers).
Read Power Supply Signals the mode of
B4h
<read supply status>
DS18S20 power supply
to the master.
17 of 27
NOTES
1
2
DS18S20
NOTES:
1. Temperature conversion takes up to 750 ms. After receiving the Convert T protocol, if the part does
not receive power from the VDD pin, the DQ line for the DS18S20 must be held high for at least
750 ms to provide power during the conversion process. As such, no other activity may take place on
the 1–Wire bus for at least this period after a Convert T command has been issued.
2. After receiving the Copy Scratchpad protocol, if the part does not receive power from the VDD pin, the
DQ line for the DS18S20 must be held high for at least 10 ms to provide power during the copy
process. As such, no other activity may take place on the 1–Wire bus for at least this period after a
Copy Scratchpad command has been issued.
READ/WRITE TIME SLOTS
DS18S20 data is read and written through the use of time slots to manipulate bits and a command word to
specify the transaction.
Write Time Slots
A write time slot is initiated when the host pulls the data line from a high logic level to a low logic level.
There are two types of write time slots: Write 1 time slots and Write 0 time slots. All write time slots
must be a minimum of 60 µs in duration with a minimum of a 1-µs recovery time between individual
write cycles.
The DS18S20 samples the DQ line in a window of 15 µs to 60 µs after the DQ line falls. If the line is
high, a Write 1 occurs. If the line is low, a Write 0 occurs (see Figure 11).
For the host to generate a Write 1 time slot, the data line must be pulled to a logic low level and then
released, allowing the data line to pull up to a high level within 15 µs after the start of the write time slot.
For the host to generate a Write 0 time slot, the data line must be pulled to a logic low level and remain
low for 60 µs.
Read Time Slots
The host generates read time slots when data is to be read from the DS18S20. A read time slot is initiated
when the host pulls the data line from a logic high level to logic low level. The data line must remain at a
low logic level for a minimum of 1 µs; output data from the DS18S20 is valid for 15 µs after the falling
edge of the read time slot. The host therefore must stop driving the DQ pin low in order to read its state
15 µs from the start of the read slot (see Figure 11). By the end of the read time slot, the DQ pin will pull
back high via the external pullup resistor. All read time slots must be a minimum of 60 µs in duration
with a minimum of a 1-µs recovery time between individual read slots.
Figure 12 shows that the sum of TINIT, TRC, and TSAMPLE must be less than 15 µs. Figure 13 shows that
system timing margin is maximized by keeping TINIT and TRC as small as possible and by locating the
master sample time towards the end of the 15-µs period.
18 of 27
DS18S20
READ/WRITE TIMING DIAGRAM Figure 11
Master Write "0" Slot
60 µs <Tx "0" < 120 µs
Master Write "1" Slot
1 µs < tREC < ∞
VCC
1-WIRE
BUS
GND
>1 µs
DS18S20 SAMPLES
MIN
TYP
MAX
15 µs
15 µs
30 µs
MIN
15 µs
DS18S20 SAMPLES
TYP
MAX
15 µs
30 µs
Master Read "1" Slot
Master Read "0" Slot
1 µs < tREC < ∞
VCC
1-WIRE
BUS
GND
Master Samples
Master Samples
>1 µs
15 µs
15 µs
30 µs
15 µs
30 µs
LINE TYPE LEGEND
Bus master active low
DS18S20 active low
Both bus master and
DS18S20 active low
Resistor pull-up
19 of 27
DS18S20
DETAILED MASTER READ 1 TIMING Figure 12
VCC
VIH OF MASTER
1-WIRE
BUS
GND
TINIT >1 µs
TRC
MASTER SAMPLES
15 µs
RECOMMENDED MASTER READ 1 TIMING Figure 13
VCC
VIH OF MASTER
1-WIRE
BUS
GND
TINIT =
SMALL
TRC =
SMALL
MASTER SAMPLES
15 µs
LINE TYPE LEGEND
Bus master active low
DS18S20 active low
Both bus master and
DS18S20 active low
Resistor pull-up
20 of 27
DS18S20
Related Application Notes
The following Application Notes can be applied to the DS18S20. These notes can be obtained from the
Dallas Semiconductor “Application Note Book,” via our website at http://www.dalsemi.com/.
Application Note 27: “Understanding and Using Cyclic Redundancy Checks with Dallas Semiconductor
Touch Memory Product”
Application Note 55: “Extending the Contact Range of Touch Memories”
Application Note 74: “Reading and Writing Touch Memories via Serial Interfaces”
Application Note 104: “Minimalist Temperature Control Demo”
Application Note 105: “High Resolution Temperature Measurement with Dallas Direct–to–Direct
Temperature Sensors”
Application Note 106: “Complex MicroLANs”
Application Note 108: “MicroLAN – In the Long Run”
Sample 1–Wire subroutines that can be used in conjunction with AN74 can be downloaded from the
website or our Anonymous FTP Site.
MEMORY FUNCTION EXAMPLE Table 3
Example: Bus Master initiates temperature conversion, then reads temperature (parasite power assumed).
MASTER MODE
TX
RX
TX
TX
TX
TX
DATA (LSB FIRST)
Reset
Presence
55h
<64-bit ROM code>
44h
<I/O LINE HIGH>
TX
RX
TX
TX
TX
RX
Reset
Presence
55h
<64-bit ROM code>
BEh
<9 data bytes>
TX
RX
Reset
Presence
COMMENTS
Reset pulse (480-960 µs).
Presence pulse.
Issue “Match ROM” command.
Issue address for DS18S20.
Issue “ Convert T” command.
I/O line is held high for at least 750 ms by bus master to
allow conversion to complete.
Reset pulse.
Presence pulse.
Issue “Match ROM” command.
Issue address for DS18S20.
Issue “Read Scratchpad” command.
Read entire scratchpad plus CRC; the master now
recalculates the CRC of the eight data bytes received
from the scratchpad, compares the CRC calculated and
the CRC read. If they match, the master continues; if
not, this read operation is repeated.
Reset pulse.
Presence pulse, done.
21 of 27
DS18S20
MEMORY FUNCTION EXAMPLE Table 4
Example: Bus Master writes memory (parasite power and only one DS18S20 assumed).
MASTER MODE
TX
RX
TX
TX
TX
TX
RX
TX
TX
RX
DATA (LSB FIRST)
Reset
Presence
CCh
4Eh
<2 data bytes>
Reset
Presence
CCh
BEh
<9 data bytes>
TX
RX
TX
TX
Reset
Presence
CCh
48h
TX
RX
Reset
Presence
COMMENTS
Reset pulse.
Presence pulse.
Skip ROM command.
Write Scratchpad command.
Writes 2 bytes to scratchpad (TH and TL).
Reset pulse.
Presence pulse.
Skip ROM command.
Read Scratchpad command.
Read entire scratchpad plus CRC. The master now
recalculates the CRC of the eight data bytes received
from the scratchpad, compares the CRC and the two
other bytes read back from the scratchpad. If data match,
the master continues; if not, repeat the sequence.
Reset pulse.
Presence pulse.
Skip ROM command.
Copy Scratchpad command; after issuing this command,
the master must wait 10 ms for copy operation to
complete.
Reset pulse.
Presence pulse, done.
22 of 27
DS18S20
MEMORY FUNCTION EXAMPLE Table 5
Example: Temperature conversion and interpolation (external power supply and only one DS18S20
assumed.)
MASTER MODE
TX
TR
TX
TX
RX
DATA (LSB FIRST)
Reset
Presence
CCh
44h
<1 data byte>
TX
RX
TX
TX
RX
Reset
Presence
CCh
BEh
<9 data bytes>
TX
RX
-
Reset
Presence
-
COMMENTS
Reset pulse.
Presence pulse.
Skip ROM command.
Convert T command.
Read busy flag eight times. The master continues
reading 1 byte (or bit) after another until the data is FFh
(all bits 1).
Reset pulse.
Presence pulse.
Skip ROM command.
Read Scratchpad command.
Read entire scratchpad plus CRC. The master now
recalculates the CRC of the eight data bytes received
from the scratchpad and compares both CRCs. If the
CRCs match, the data is valid. The master saves the
temperature value and stores the contents of the count
register and count per °C register as COUNT_REMAIN
and COUNT_PER_C, respectively.
Reset pulse.
Presence pulse, done.
CPU calculates temperature as described in the data
sheet for higher resolution.
23 of 27
DS18S20
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
–0.5V to +6.0V
–55°C to +125°C
–55°C to +125°C
See J-STD-020A specification
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Supply Voltage
Data Pin
Logic 1
Logic 0
SYMBOL
VDD
DQ
VIH
VIL
CONDITION
Local Power
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Thermometer Error
SYMBOL
tERR
Input Logic High
VIH
Input Logic Low
Sink Current
Standby Current
Active Current
DQ Input Load
Current
VIL
IL
IDDS
IDD
IDQ
MIN
3.0
-0.3
2.2
-0.3
TYP
MAX
5.5
VDD
VDD+0.3
+0.8
UNITS
V
V
V
V
NOTES
1
1
1,2
1,3,7
(-55°C to +125°C; VDD=3.0V to 5.5V)
CONDITION
-10°C to +85°C
-55°C to +125°C
Local Power
Parasite Power
VI/O=0.4V
MIN
TYP
2.2
3.0
-0.3
-4.0
MAX
±½
±2
5.5
+0.8
750
1
5
1000
1.5
UNITS
°C
NOTES
V
V
V
mA
nA
mA
µA
1,2
1,2
1,3, 7
1
6,8
4
5
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
(-55°C to +125°C; VDD=3.0V to 5.5V)
PARAMETER
NV Write Cycle Time
EEPROM Writes
EEPROM Data
Retention
SYMBOL
tWR
NEEWR
tEEDR
CONDITION
MIN
-55°C to +55°C
-55°C to +55°C
50k
10
24 of 27
TYP
2
MAX
10
UNITS
ms
writes
years
NOTES
DS18S20
AC ELECTRICAL CHARACTERISTICS:
(-55°C to +125°C; VDD=3.0V to 5.5V)
PARAMETER
SYMBOL
Temperature Conversion
tCONV
Time
Time Slot
tSLOT
Recovery Time
tREC
Write 0 Low Time
rLOW0
Write 1 Low Time
tLOW1
Read Data Valid
tRDV
Reset Time High
tRSTH
Reset Time Low
tRSTL
Presence Detect High
tPDHIGH
Presence Detect Low
tPDLOW
Capacitance
CIN/OUT
CONDITION
MIN
60
1
60
1
480
480
15
60
TYP
200
MAX
750
120
120
15
15
60
240
25
UNITS NOTES
ms
µs
µs
µs
µs
µs
µs
µs
µs
µs
pF
9
NOTES:
1. All voltages are referenced to ground.
2. Logic one voltages are specified at a source current of 1 mA.
3. Logic zero voltages are specified at a sink current of 4 mA.
4. Active current refers to either temperature conversion or writing to the E2 memory. Writing to E2
memory consumes approximately 200 µA for up to 10 ms.
5. Input load is to ground.
6. Standby current specified up to 70°C. Standby current typically is 3 µA at 125°C.
7. To always guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have
to be reduced to as much as 0.5V.
8. To minimize IDDS, DQ should be GND ≤ DQ ≤ GND + 0.3V or VDD – 0.3V ≤ DQ ≤ VDD.
9. Under parasite power, the max tRSTL before a power on reset occurs, is 960 ms.
25 of 27
DS18S20
1—WIRE WRITE ONE TIME SLOT
1—WIRE WRITE ZERO TIME SLOT
1—WIRE READ ZERO TIME SLOT
1—WIRE RESET PULSE
1-WIRE PRESENCE DETEST
26 of 27
DS18S20
TYPICAL PERFORMANCE CURVE
DS18S20 Typical Error Curve
0.5
0.4
0.3
+3σ Error
0.2
0.1
0
0
10
20
30
40
50
60
-0.1
-0.2
Mean Error
-0.3
-0.4
-3σ Error
-0.5
Reference Temp (C)
27 of 27
70