Poster Session

Advanced Power Modules

Schedule

Chairperson

Description

15:15

Influence of Auxiliary Gate and Emitter Connections on Short Circuit Behaviour of Multichip IGBT Modules

Dr. Helong Li, Dynex Semiconductor, Lincoln, Grossbritannien

This paper investigates the influence of the auxiliary emitter and the gate connections on short circuit current behaviour of multichip IGBT power module. It reveals that the position of the auxiliary emitter connection has significant impact on the short circuit current of the power module. Experimental results validate the analysis of the short circuit current. The conclusion of this paper helps DBC layout design in terms of short circuit performance.

15:15

Impact of I2t Capability of RC-IGBT and Leadframe Combined Structure in xEV Active Short Circuit Survival

M.Eng. Hayato Nakano, Fuji Electric, Matsumoto, Nagano, Japan

This presentation describes the new investigate results of s I2t capability for automotive IGBT power module used for xEV powertrain application. Experimental done with combination matrix of :(RC-IGBT or the conventional FWD ) x (leadframe interconnection or bondwires), These results gives giant impact on vehicle safety in terms of much higher capability in active short-circuit failure mode, in which the inverter must open all-low side switches to protect batteries from abnormally high motor surge.

15:15

New Developed 3.3kV/1500A IGBT Module

Daohui Li, Dynex Semiconductor, Lincoln, Grossbritannien

One set of new internal design and assembly process have been utilised into high power IGBT module with 140mmX190mm footprint. There are several key improvements for the module: (a) 3D busbar-substrate assembly has shown 40% less inductance than the traditional 2D structural busbars; (b) 12.5% reduction of IGBT?s thermal resistance and 25% reduction of FRD?s thermal resistance, (c) FRD performance has been enhanced, (d) ohmic losses from both metal busbars and metal layer of substrates are much lower for the new design.

This paper describes newly developed 7th Generation 1,700V IGBT module. The 7th Generation 1,700V IGBT modules have been developed based on concepts of higher power density and higher reliability. To realize the concepts, many advanced technologies are applied such as power dissipation improvement by newly developed 7th generation IGBT and FWD Si dies, lower thermal resistance by high thermal conductive thinner AlN ceramics and upgrade the operation temperature up to 175deg.C.

15:15

Analytical Modelling of Dynamic Power Losses Inside Power Modules for 2-Level Inverters

Arne Bieler, Danfoss Silicon Power, Flensburg, Deutschland

Simplified power loss calculation models are commonly based on linear scaling of losses from datasheets, which reduces their accuracy, and do not allow dynamic load profile investigations in most cases, but stop at steady state considerations of losses and temperature.This paper proposes a modelling approach considering time discrete modelling of load profiles and obtaining electrical input data of chips from more accurately scaled algorithms.

15:15

Failure Protection in Power Modules with Auxiliary-Emitter Bond-Wires

Dr. Nick Baker, Aalborg University, Aalborg East, Dänemark

In this study we show how including an auxiliary-emitter resistor in the design of the power module prevents loss of gate control after device failure, and provides a large warning signal that allows a fault control strategy to be implemented immediately and save the module from explosion.

15:15

An Efficient Active Mains Rectifier Bridge Based on Bipolar Technology

Nick Koper, WeEn Semiconductors, Groningen, Niederlande

The combination of bipolar technology and an innovative driving method enables the implementation of a cost-effective active mains rectifier bridge. With the new rectifier bridge the power dissipation in the rectification stage of a power converter can be reduced by 70% and the overall system efficiency is increased by up to 1%. In power converters that operate 24/7, the active bridge pays for itself within one year.

15:15

Development of New 600V Smart Power Module for Home Appliances Motor Drive Application

Samuell Shin, ON Semiconductor, Bucheon-Si, Südkorea

This paper presents a new 600V SPM package, which combines with the features of the latest trench Field-Stop technology IGBT and optimized gate driver IC to achieve the excellent solution for motor drives applications in home appliances. Especially, this module is adopted and optimized to integrated bootstrap circuitry in drive IC which can be fully supported for a simple layout and less PCB space to develop a motor drive power stage.

Speaker

Speaker detail

Dr. Nick Baker

Aalborg University, Aalborg East, Dänemark

Nick Baker received the M.Eng. degree in electrical and electronic engineering from Loughborough University, Leicestershire, U.K., in 2011. In 2013, he started working toward the Ph.D. degree at Aalborg University, Aalborg, Denmark, in temperature measurements of power semiconductor devices. He now works as a post-doc at Aalborg University.

Arne Bieler

Danfoss Silicon Power, Flensburg, Deutschland

Arne Bieler has studied electrical engineering and economics at Unisversity of Kiel finishing with master's degree working on reliability of DC-link capacitors in wind turbine systems in his final thesis. Since 2016 he works as an application engineer for Danfoss Silicon Power in Flensburg with focus on pre-development of power modules for industry and automotive and technology assessment.

Nick Koper

WeEn Semiconductors, Groningen, Niederlande

Author has been active in the field of (bipolar) semiconductors and switched-mode power converters in Philips, NXP and WeEn semiconductors for the last 30 years.

Daohui Li

Dynex Semiconductor, Lincoln, Grossbritannien

Obatined PhD degree from Queen Mary University of London in 2006, joined in Dynex in 2013, currently working as Module group manager in R&D Center, Dynex Semiconductor.

Dr. Helong Li

Dynex Semiconductor, Lincoln, Grossbritannien

Helong Li is an Senior R&D Engineer in Dynex Semiconductor Ltd. He got his PhD degree from Aalborg University, 2015. His research interests are power semiconductor packaging, characterization, and application.

M.Eng. Hayato Nakano

Fuji Electric, Matsumoto, Nagano, Japan

Hayato Nakano has been belonged to Fuji Electric since 2005. Key experiences are IGBT and FWD chip design, silicon carbide device development and power module design for industrial and automotive applications.

Samuell Shin

ON Semiconductor, Bucheon-Si, Südkorea

To seek power module development and application engineer position, based on the accumulated knowledge and technology from 8-years experience of power module development and customer support in the power semiconductor industry

M.Eng. Takuya Yamamoto

Fuji Electric, Matsumoto, Nagano, Japan

He received the B.Eng. and M.Eng. degrees in electrical engineering from Oita University, Japan in 2004 and 2006, respectively. In 2006, he joined Fuji Electric Co., Ltd. Since then, he has been engaged in the design and development of IGBT module and application technologies.