Abstract

In this study, we have analyzed the Au/ZnO single nanowire based Schottky diode by investigating temperature dependent current voltage and x-ray photoelectron spectroscopy(XPS)measurements. The calculated barrier height of the Schottky diodes by using the thermionic emission model is in good agreement with the value obtained from the XPSmeasurements but lower than the theoretically predicted value. The ionization of interface states has been considered for explaining this discrepancy.

Received 19 January 2010Accepted 08 February 2010Published online 05 March 2010

Acknowledgments:

This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. R32-20031) and the IT R&D program of MKE/IITA (Grant No. 2008-F-023-01).