Author:

Yi Zheng
(National University of Singapore)

The unique linear energy band dispersion and its purely 2D
crystalline structure have made graphene a rising star not only
for fundamental research but also for nanoscale device
applications. Here we demonstrate a novel non-volatile memory
device using a combination of graphene and a ferroelectric thin
film. The binary information, i.e. ``1'' and ``0'', is
represented by the high and low resistance states of the graphene
working channels and is switched by the polarization directions
of the ferroelectric thin film. A highly reproducible resistance
change exceeding 300\% is achieved in our graphene-ferroelectric
hybrid devices under ambient conditions. The experimental
observations are explained by the electrostatic doping of
graphene by the remnant electrical field at the
ferroelectric/graphene interface.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.J28.4