Abstract

Electromigration results have provided clear evidence of a short or “Blech” length effect in dual- damascene, Cu/oxide, multilinked interconnects. The test structure incorporates a repeated chain of Blech-type line elements and is amenable to failure analysis tools such as focused ion beam imaging. This large interconnect ensemble provides a statistical representation of electromigrationinduced damage in the regime where steady-state interconnect stress is manifest. Statistical analysis yields a critical length of 90 μm for interconnects with line width 0.5 μm at and