The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics p. 30. (2006)[Konferensbidrag, refereegranskat]

We present a Heterostructure Barrier Varactor (HBV) based tripler for power generation at ~100 GHz. The matching circuit for the HBV diode is implemented in microstrip on an AlN substrate with the diode flip-chip soldered. The microstrip circuit is mounted in a waveguide configuration. To simplify the fabrication and assembly no DC ground is used and the waveguides are full-height. 130 mW of output power at 114 GHz is achieved without the use of any tuners.

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BibTeX @conference{Bryllert2006,author={Bryllert, Tomas and Vukusic, Josip and Emadi, T. Arezoo and Stake, Jan},title={A High-Power Frequency Tripler for 100 GHz},booktitle={The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics},isbn={1-4244-0400-2},pages={30},abstract={We present a Heterostructure Barrier Varactor (HBV) based tripler for power generation at ~100 GHz. The matching circuit for the HBV diode is implemented in microstrip on an AlN substrate with the diode flip-chip soldered. The microstrip circuit is mounted in a waveguide configuration. To simplify the fabrication and assembly no DC ground is used and the waveguides are full-height. 130 mW of output power at 114 GHz is achieved without the use of any tuners.},place={Shanghai, China},year={2006},keywords={HBV, frequency multiplier, varactor diode, terahertz source},}

RefWorks RT Conference ProceedingsSR PrintID 22537A1 Bryllert, TomasA1 Vukusic, JosipA1 Emadi, T. ArezooA1 Stake, JanT1 A High-Power Frequency Tripler for 100 GHzYR 2006T2 The Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz ElectronicsSN 1-4244-0400-2AB We present a Heterostructure Barrier Varactor (HBV) based tripler for power generation at ~100 GHz. The matching circuit for the HBV diode is implemented in microstrip on an AlN substrate with the diode flip-chip soldered. The microstrip circuit is mounted in a waveguide configuration. To simplify the fabrication and assembly no DC ground is used and the waveguides are full-height. 130 mW of output power at 114 GHz is achieved without the use of any tuners.LA engOL 30