Abstract

A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demonstrated by these devices at microwave frequencies. The prospects of utilizing the devices for high power integrated amplifiers are excellent although the issue of thermal management will need to be addressed especially for devices and circuits on sapphire.

Abstract

A summary of the performance of AlGaN/GaN heterostructure field effect transistors on sapphire and SiC substrates are presented. High total power have been demonstrated by these devices at microwave frequencies. The prospects of utilizing the devices for high power integrated amplifiers are excellent although the issue of thermal management will need to be addressed especially for devices and circuits on sapphire.