Right now efficiency is only one percent, but professor Baratunde Cola and colleagues at the Georgia Institute of Technology (Georgia Tech, Atlanta) convincingly argue that they can achieve 40 percent broad spectrum efficiency (double that of silicon and more even than multi-junction gallium arsenide) at a one-tenth of the cost of conventional solar cells (and with an upper limit of 90 percent efficiency for single wavelength conversion).

It is well suited for mass production, according to Cola. It works by growing fields of carbon nanotubes vertically, the length of which roughly matches the wavelength of the energy source (one micron for solar), capping the carbon nanotubes with an insulating dielectric (aluminum oxide on the tethered end of the nanotube bundles), then growing a low-work function metal (calcium/aluminum) on the dielectric and voila--a rectenna with a two electron-volt potential that collects sunlight and converts it to direct current (DC).

"Our process uses three simple steps: grow a large array of nanotube bundles vertically; coat one end with dielectric; then deposit another layer of metal," Cola told EE Times. "In effect we are using one end of the nanotube as a part of a super-fast metal-insulator-metal tunnel diode, making mass production potentially very inexpensive up to 10-times cheaper than crystalline silicon cells."

For commercialization, billions or even trillions of carbon-nanotube bundles could be grown side-by-side, ramping up the power output into the megaWatt range, after optimization for higher efficiency.

"We still have a lot of work to do to lower contact resistance which will improve the impedance match between the antenna and diode, thus raising efficiency," Cola told us."Our proof-of-concept was tuned to the near-infrared. We used infrared-, solar- and green laser-light and got efficiencies of less than one percent, but what was key to our demo was we showed our computer model matched our experimental results, giving us the confidence that we can improve the efficiency up to 40 percent in just a few years."

For the future, Cola's group has a three tiered goal--first develop sensor applications that don't require high efficiencies, second to get the efficiency to 20 percent for harvesting waste heat in the infrared spectrum, then start replacing standard solar cells with 40 percent efficient panels in the visible spectrum. The team is also seeking suitable flexible substrates for applications that require bending.

Schematic of the components making up the optical rectenna--carbon nanotubes capped with a metal-oxide-metal tunneling diode. (Credit: Thomas Bougher)
(Source: Georgia Tech)

An optical rectenna—a device that directly converts free-propagating electromagnetic waves at optical frequencies to direct current—was first proposed over 40 years ago, yet this concept has not been demonstrated experimentally due to fabrication challenges at the nanoscale. Realizing an optical rectenna requires that an antenna be coupled to a diode that operates on the order of 1 pHz (switching speed on the order of 1 fs). Diodes operating at these frequencies are feasible if their capacitance is on the order of a few attofarads but they remain extremely difficult to fabricate and to reliably couple to a nanoscale antenna. Here we demonstrate an optical rectenna by engineering metal–insulator–metal tunnel diodes, with a junction capacitance of ∼2 aF, at the tip of vertically aligned multiwalled carbon nanotubes (∼10 nm in diameter), which act as the antenna. Upon irradiation with visible and infrared light, we measure a d.c. open-circuit voltage and a short-circuit current that appear to be due to a rectification process (we account for a very small but quantifiable contribution from thermal effects). In contrast to recent reports of photodetection based on hot electron decay in a plasmonic nanoscale antenna a coherent optical antenna field appears to be rectified directly in our devices, consistent with rectenna theory. Finally, power rectification is observed under simulated solar illumination, and there is no detectable change in diode performance after numerous current–voltage scans between 5 and 77 °C, indicating a potential for robust operation.