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Dr. Martin M. Frank is a Research Staff Member at IBM T.J. Watson Research Center in Yorktown Heights, NY. His research focuses on new materials for CMOS transistor scaling, including high-permittivity (high-k) gate dielectrics, metal gate electrodes, high-carrier-mobility materials such as Ge and InGaAs, and ferroelectrics.

In 1996, Dr. Frank earned a Diplom degree in physics from Ruhr-Universität Bochum, Germany. He then joined Fritz-Haber-Institut der Max-Planck-Gesellschaft in Berlin, Germany, studying the catalytic activity of oxide-supported metal nanoparticles using surface science techniques in ultra-high vacuum. In 2000, Dr. Frank received a Ph.D. degree in physics from Humboldt-Universität zu Berlin, and was awarded the Otto Hahn Medal for outstanding scientific achievements. During a postdoctoral appointment at Rutgers University, he commenced his work on high-k dielectrics, while also investigating self-assembled monolayers for molecular electronics. In 2003, Dr. Frank joined IBM. During an assignment to IMEC in Leuven, Belgium, he worked in the field of photoresist chemistry. In 2007, he was recognized as an IBM Master Inventor. In 2013, he received an IBM Research Division Award for his contributions to high-k/metal gate technology.

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