Description:
The TPMC917 is a standard single-width 32 bit PMC module providing 4Mbyte SRAM with battery backup by an on board lithium cell for all SRAM devises and four ESD protected RS232 channels. The 4Mbyte SRAM is organized in two banks, each of them provides 512k x 32 bit

Description:
The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not

Description:
The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not

Description:
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop

Description:
The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM,EPROM, EEPROM and RAMs. The HM-65642 is ideally suited for use in

Description:
TT Semiconductor is the leading manufacturer of electronic components designed to survive under extreme temperature ranges and harsh environmental conditions. The current standard product offering is focused on high performance analog and memory devices.
TT Semiconductor is a newly formed

Description:
The Microchip Technology Inc 47L04 EERAM is a 4Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 512 x 8 bits and utilizes the I2C serial interface. The 47L04 provides

Description:
The 723622 is a monolithic Bidirectional SyncFIFO (clocked) memory. Two independent 256 x 36 dual-port SRAM FIFOs on board each chip buffer data in opposite directions. Communication between each port may bypass the FIFOs via two 36-bit mailbox registers. The enables for each port are

Description:
(SPI) protocol. Operating at frequencies reaching 104 MHz, the SST26VF016B enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on an SRAM. The device’s high performance and reliability make it the ideal choice for Network Appliance, DSL and

There are applications where a significant amount of data memory is required beyond what is in the micro-controller. For example, buffering communications data, creating large volatile tables and arrays. One interesting application is voice storage and playback. Some applications require relatively

The release of the PIC16F87X devices introduces the first mid-range family of devices from Microchip Technology that has the capability to read and write to internal program memory. This family has FLASH-based program memory, SRAM data memory and EEPROM data memory. The FLASH program memory allows

FRAM is a non-volatile memory technology that behaves similar to SRAM while enabling a whole host of new applications, but also changing the way firmware should be designed. This application report outlines the how to and best practices of using FRAM technology in MSP430 from an embedded software

Alliance Semiconductor has placed the first volume order for chips from Tower Semiconductor's newest chip factory. The pure-play foundry says Alliance wants volume output of its 4-Mb asynchronous SRAM using Tower's 180-nm process. Shipments are scheduled for mid-2003. One of Tower's four partners

storage capacities of DRAM; has the same extremely high data retrieval speeds of SRAM (static RAM); and is nonvolatile (it has no moving parts), just like flash memory. MRAM chips should be smaller than other types of memory chips because MRAM data storage can be extremely dense. Best of all, MRAM

A prototype of the 80-core teraflop processor
with an SRAM layer stacked on top of the processor cores, which was designed and
fabricated by Intel, also demonstrated the benefits of stacking SRAM memories on
CMPs [2].