The invention relates to a method for producing optoelectronic semiconductor chips (1) comprising the following steps in the specified order: A) providing a semiconductor layer sequence (2), B) applying an electrical second contact structure (33) to a side of the semiconductor layer sequence (2) facing away from a growth substrate (20), C) applying at least one electrical insulating layer (41, 42) to the second contact structure (33) and to the semiconductor layer sequence (2), D) applying a first contact structure (31) such that the first contact structure (31) is electrically connected to a region (21) of the semiconductor layer sequence (2) facing the growth substrate (20), E) applying a further electrical insulating layer (43) at least to the first contact structure (31) in some locations, F) producing electrical contact surfaces (51, 53) such that an extent of the contact surfaces (51, 53) in the direction away from the semiconductor layer sequence (2) is defined with a tolerance of at most 5 μm by means of step F).