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Concern Sozvezdie developed first in Russia transistor operating in extreme conditions

JSC Concern Sozvezdie (member of JSC United Instrument
Manufacturing Corporation of Rostec State Corporation) has developed the first
in Russia import-substituting high-power SHF Gallium Nitride transistors. The device
provides operation of aviation, space and military equipment in extreme
conditions – when undergoing special impact and when the ambient temperature
ranges between -60°C and +125°C.

Being developed by JSC Research Institute for
Electrotechnology, Voronezh, (member of JSC Concern Sozvezdie) this invention
complies with the leading world analogues. The transistor was produced with the
use of modern Gallium Nitride technology on semi-insulating silicized carbon
(GaN/SiC); the main advantage of such approach is high specific power output of
equipment (more than 3 W/mm) and its enhanced resistance to special external
impact. For instance, technical facilities equipped with these transistors
could operate in the Arctic or underwater.

“The use of the developed 10-Watt Gallium Nitride transistor
in SHF special- and dual-purpose equipment decreases mass-dimensional
characteristics of end products,” - said Dmitry Kozhanov, director general of
JCS Research Institute for Electrotechnology. “The invention could be used in
equipment operating at up to 6 GHz frequency with 28 V power supply voltage,
for example, in radio communication systems, radar equipment and EW facilities.”

Nowadays the companies of interest complete the tests of the
developed transistors within their equipment.

In the long term, serial production of high-power SHF GaN
transistors with 28 V and50 V working
supply voltage of is planned. Only in home market the demand for high-power SHF
Gallium Nitride transistors increases 100 thousand articles per year, roughly
estimated.