Category | MOSFET

ROHM Semiconductor introduced 1200V 120A full SiC (Silicon Carbide) power module composed of SiC Schottky barrier diodes (SBDs) and SiC MOSFETs. When compared with conventional IGBT modules, this module can reduce switching loss by 85%. However, this module is not necessarily enough to drive higher current, which is required from many industrial applications. This [...]

Overvoltage limitation between main terminals Measures to limit overvoltages between main terminals (collector-emitter voltage, DC link voltage) can be divided into passive snubber networks, active clamping, and dynamic gate control. Irrespective of the type of overvoltage limitation, the avalanche operation mode of a MOSFET can [...]

Power electronics largely use the vertical structure, where gate and source terminals are located on the chip surface and the drain terminal is on the underside of the chip. The load current is conducted vertically through the chip outside the channel. The VDMOSFET version ( Vertical Double Diffused [...]

The important features of driven power MOSFET or IGBT are dependent on VGG+, VGG-, and RG ratings. The table below lists many of these features and provides an initial overview of how they relate to VGG+, VGG-, and RG. The symbols in the table are to be interpreted [...]

To protect MOSFET or IGBT modules in the event of malfunction/errors, the use of different efficient, quick-response protection functions in the driver is recommended; for example, overcurrent and short circuit protection, protection from excessive drain-source or collector-emitter voltage, gate overvoltage protection, overtemperature protection and monitoring of the gate [...]

Power semiconductors have to be protected from non-permissible stress in every operational state. Leaving SOAs (Safe Operating Areas) leads to damage and therefore reduces component's life. In the worst case scenario, the component will be immediately destroyed. This is why it is important to detect critical states and [...]

Overload Essentially, the switching and on-state behavior of IGBTs and MOSFETs under overload does not differ from "standard operation" under rated conditions. In order not to exceed the maximum junction temperature and to ensure safe operation, the overload range has to be restricted since increased [...]

Power MOSFET properties are strongly influenced by the parasitic elements in the real structure. Forward off-state and avalanche breakdown If a positive drain-source voltage VDS and a gate-source voltage VGS below the gate-source threshold voltage level VGS(th) is applied, only a very small cut-off current IDSS will flow [...]

A Metal Oxide Semiconductor Field Effect Transistor is a transistor used for amplifying or switching electronic signals. The body of a MOSFET is usually connected to the source terminal which makes it a three-terminal device similar to other Field Effect Transistors (FET). Field effect transistors form a large [...]

Below are several important criteria that should be considered when selecting IGBT and MOSFET modules. 1.) Operating voltage Blocking voltage Since most power modules are used in DC voltage links which are AC-voltage supplied via single-phase or three-phase rectifier bridges, the blocking voltages of IGBT and MOSFET modules are adjusted to common line voltage [...]