Title (de)

Title (fr)

Publication

Application

Priority

JP 7332593 A 19930331

JP 11005792 A 19920428

JP 29864492 A 19921109

Abstract (en)

[origin: EP0568269A2] A high speed soft recovery diode having a large breakdown voltage is disclosed. Anode P layers (3) are selectively formed in a top portion of an N<-> body (2). A P<-> layer (4a) is disposed in the top portion of the N<-> body (2) so as to be spacewise complementary to the anode P layers (3). In the N<-> body (2), P regions (5) are selectively formed below the P<-> layer (4a). On the N<-> body (2), an anode electrode (6) is disposed in contact with both the P<-> layer (4a) and the anode P layers (3). A cathode electrode (7) is disposed under the N<-> body (2) through a cathode layer (1). When the diode is reverse-biased, a depletion layer does not have a sharply curved configuration due to the P regions (5). Hence, concentration of electric field is avoided and a breakdown voltage would not deteriorate. During forward-bias state of the diode, injection of excessive holes from the anode P layers (3) into the N<-> body (2) is prevented, thereby reducing a recovery current. <IMAGE>