This paper presents a compact length-dependent saturation current (Idsat) model for deep-submicron MOSFETs based on accurate modeling of the threshold voltabe (Vth). The proposed unified model has considered all the important two-dimensional (2-D) short-channel effects, such as Vth roll-up and roll-off, drain induced barrier lowering (DIBL), transverse-field mobility degradation and series resistance. The unique feature of the compact model is its ability to correlate to process variations such as implantation dose and energy. The model is verified with measured Idsat data for various bias conditions and process splt-run.