* Tesista de Ingeniería Física de la Facultad de Ingeniería de la UADY.

** On leave on the Programa de Corrosion del Golfo de México de la UAC.

Recibido el 24 de enero de 2005 Aceptado el 4 de noviembre de 2005

Abstract

Cadmium sulphide thin films prepared by chemical bath deposition (CBD) were deposited on indium tin oxide (ITO) substrates with different deposition times (i.e. thickness) and characterised by their morphology and band gap energy. Samples were analysed as deposited and after annealing at 90 and 150°C, in order to study the interface diffusion and its effects on the properties mentioned. Auger depth profiles were used to determine the mass diffusivity coefficient in the CdS/ITO interface. The initial surface rmsroughness measured with AFM, as well as the initial band gap energy, are reduced after the annealing process. We obtained very small diffusion coefficient values, around 1021 m2/s, for the different elements analysed in the interface.