Abstract

AlGaInN laser diodes is an emerging technology for defence and security
applications such as underwater communications and sensing, atomic clocks
and quantum information. The AlGaInN material system allows for laser
diodes to be fabricated over a very wide range of wavelengths from u. v., similar to 380nm, to the visible similar to 530nm, by tuning the
indium content of the laser GaInN quantum well. Thus AlGaInN laser diode
technology is a key enabler for the development of new disruptive system
level applications in displays, telecom, defence and other industries.
Ridge waveguide laser diodes are fabricated to achieve single mode
operation with optical powers up to 100mW with the 400-440nm wavelength
range with high reliability. Visible free-space and underwater
communication at frequencies up to 2.5GHz is reported using a directly
modulated 422nm GaN laser diode.
Low defectivity and highly uniform GaN substrates allow arrays and bars to
be fabricated. High power operation operation of AlGaInN laser bars with
up to 20 emitters have been demonstrated at optical powers up to 4W in a
CS package with common contact configuration. An alternative package
configuration for AlGaInN laser arrays allows for each individual laser
to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.