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Abstract

Piezoelectric acoustic surface waves are detected by plane surface insulated-gate field-effect transistors IGFET's. External electric fields associated with a propagating piezoelectric acoustic surface wave are used to control the resistance channels between the source and the drain in a IGFET. Thus the output current of the IGFET is modulated.

Country

United States

Language

English (United States)

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Detection of Piezoelectric Surface Acoustic Waves

Piezoelectric acoustic surface waves are detected by plane surface
insulated-gate field-effect transistors IGFET's. External electric fields associated
with a propagating piezoelectric acoustic surface wave are used to control the
resistance channels between the source and the drain in a IGFET. Thus the
output current of the IGFET is modulated.

The IGFET device shown consists only of a P-type substrate 10 on which are
diffused two separated n/+/ regions 12 and 14 as the source and drain
connections. The oxide layer and the metal pattern of a usual IGFET device are
removed. The optical polished IGFET surface is then laid in the path of surface
acoustic waves. These are caused to propagate in piezoelectric substrate 16 by
transducer 18. The width of the acoustic beam has to be larger than the
separation between source 12 and drain 14.

As the propagating piezoelectric acoustic surface waves reach the IGFET
region, the external electric fields associated with the surface waves redistribute
the minority carriers in substrate 10 and create resistance channels between
regions 12 and 14. If the surface acoustic waves are sinusoidal, the associated
electric fields have alternate polarities in the direction of propagation. This
IGFET can operate in type C mode which is a normally-off device. As the
sinusoidal acoustic surface waves register under the IGFET, n channels of the
resistant channel between regions 12 and 14 make...