The heteroepitaxial quality of (100) Si films on (1102) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350 Â°C for at least several seconds. For a 6000-Ã… (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

Presents a study that examined the annealing behaviors of dislocation formed near the projected range in silicon. Use of Rutherford backscattering spectrometry; Factors influencing the formation and growth of the loops; Temperature range by which silicon was annealed.

Negative and positive charge trapping in a constant current regime under high-field electron injection both from Al electrode and Si substrate in high-dose Ge[sup +] ion implanted and then rapid thermal annealed thin-film dioxide has been studied. Negatively charged traps as well as generated...

This work describes the laser annealing of a-SiC and a-SiCN films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of a-SiCN thin films were produced under different N/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier...

Very thin Au layer was deposited on Si(100) using the sputtering technique. By annealing at 873 K Au/Si nanodroplets were formed and their self-organization was induced changing the annealing time. The evolution of droplet size distribution, center-to-center distance distribution, and droplet...

Presents a study which reported results on the behavior of implanted indium (In) and on the structural damage in silicon during rapid thermal annealing for different implanted In doses. Experimental techniques used; Result of Rutherford back scattering spectrometry and channeling spectra for an...

The diffusion of ion-implanted cesium in thermally grown SiO2 has been examined in the temperature range 700â€“1000 Â°C using Rutherford backscattering spectrometry (RBS). Silicon samples were oxidized and implanted with 5Ã—1014 cm-2 133Cs at 145 keV and then annealed in nitrogen using...

Interfacial reactions as a function of the stack structure of Al2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al2O3 film with a buffer layer of HfO2, reactions between the Al2O3 and Si layers were suppressed,...