Patrick Lomenzo will present on ferroelectricity in HfO2-based thin films:

Ferroelectricity in HfO2-based thin films offers an intriguing pathway toward the realization of ferroelectric devices for next generation memory technologies. Understanding the reliability characteristics and underlying defects of HfO2 ferroelectrics is of critical importance for its successful adoption in emerging memory devices. The observation of asymmetric ferroelectric properties of HfO2 thin films with TaN electrodes is discussed in the context of charged defects and the chemical properties of the electrode interfaces.