A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect.