Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin states in silicon based quantum computers.

Received 26 October 2007Accepted 06 November 2007Published online 12 December 2007

Acknowledgments:

The authors thank R. de Sousa for helpful discussions. This work was supported by the National Security Agency under MOD 713106A, the Department of Energy under Contract No. DE-AC02-05CH11231, the National Science Foundation under Grant No. 0404208, and the Nanoelectronics Research Initiative-Western Institute of Nanoelectronics. The support in device fabrication by the UC Berkeley Microlab staff is gratefully acknowledged.