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Abstract

A technique is described whereby blue and ultraviolet light is produced from a solid-state diode.

Country

United States

Language

English (United States)

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ULTRAVIOLET ELECTRO-LUMINESCENT DIODE IN SiC:AeN

A technique is described whereby blue and ultraviolet light is produced from
a solid-state diode.

Typically, SiC blue diodes have an upper limit determined by the bandgap of 3.3 ev for the 2H polytype, and in itself is a rare type generally not made into
large crystals. The more common poly types of blue diodes are nearer 3 ev.
The concept described herein involves a diode in a SiC:AeN mixed crystal which
can have a bandgap spanning the range 3 to 6 ev, depending on the particular
mixture of SiC and AeN.

When SiC:AeN is grown using prior art [*], it produces a layer of SiC:AeN on
sapphire with an absorption edge of 4.6 ev. Diodes, as shown in the figure, have
been made by alloying two Si dots, spaced .5 to 3 or more mils apart at 1900 -
2000oC in argon forming gas. When a voltage of > 200 V is applied, the
resistance between the dots, initially high, diminishes with increasing
temperature, to values low enough so that the voltage is less than 100 V at 20
ma. The light is emitted near the electrodes and appears blush white to the eye.
The spectrum, as measured by a spectrograph, spans wavelengths between
3900 angstroms and 4700 angstroms. Some diodes have shown emission from
wavelengths as low as 3000 angstroms.

Although, experimental diodes show relatively low efficiency, on the order of
10-5, improved technology should increase the efficiencies. AeNx-SiC1-x mixed
crystals for large X will be direct bandgap since t...