November 18, 2016 (datsyn.com) – PyroGenesis Canada Inc.’s (PYR.V) Purevap process can not only transform high-purity quartz to high-purity silicon metal, but the process can also transform low-purity quartz (97.5 per cent) to high-purity silicon metal.

“These results are significant as the prevailing proposition suggests that the quartz purity level required to make high-purity silicon metal is over 99.5 per cent (1),” said P. Peter Pascali, president and chief executive officer of PyroGenesis. “The Purevap has proven that to no longer be the case. We have demonstrated that the process can produce quartz of a significantly lower purity level (97.5 per cent) as feedstock, and still produce high-purity silicon metal. The implications of this are enormous when considering the potential commercial applications of the process. Conceivably, we can now take a cheap and abundant low-purity quartz feedstock and transform it into a high-value end product.”

“We are extremely pleased with the progress to date,” said Pierre Carabin, chief technology officer of PyroGenesis. “Particularly, when one considers today’s results in light of our press release dated Sept. 29, 2016, wherein we announced, amongst other things, that the Purevap process can remove one of the toughest impurities on the road to solar-grade silicon, namely boron, from the final material produced. It seems that we are truly on to something unique.”

In addition, Mr. Pascali provides a background/update in the following question and answer format.

What is the Purevap process?

The Purevap process is a process being developed by PyroGenesis which is targeting the transformation of quartz, in one step, into a solar-grade metal suitable for solar panel applications. This effectively eliminates significant overheads thereby creating a simple, pure and cheap alternative to that currently available. If successful, this process could have a significant impact on the solar panel industry. Of note, however, there are significant additional commercial applications at lower silicon purity levels as reflected in the attached table (2).