Conference

Abstract

Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique.