Articles Tagged with ''efficiency''

Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, announced the completion of a 1 kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards.

New research by engineers from the Universities of Bristol and Lund, working alongside National Instruments (NI), has demonstrated how a massive antenna system can offer a 12-fold increase in spectrum efficiency compared with current 4G cellular technology.

M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, announced its highly-anticipated MAGb series of GaN power transistors for use in wireless macro basestations. Leveraging MACOM’s Gen4 GaN technology, the new MAGb series is the industry’s first commercial basestation-optimized family of GaN transistors to achieve leadership efficiency, bandwidth and power gain with a linearity and cost structure like LDMOS, and a path to better than LDMOS cost at scaled volume production levels.

Skyworks Solutions, Inc., an innovator of high performance analog semiconductors connecting people, places and things, launched SkyBlue™, a new and revolutionary enabling technology that enhances both the power capability and efficiency in LTE amplifiers and front-end solutions. Designs utilizing SkyBlue™ technology not only deliver twice the power of envelope and average power tracking systems available on the market today, but across much broader power ranges.

JADAK LLC, a global leader and supplier of HF RFID, optical data collection and machine vision technologies to original equipment manufacturers (OEMs) in medical, security, gaming and kiosk industries, announced that it has acquired the assets of SkyeTek, a Denver, Colo.-based provider of embedded and stand-alone UHF RFID Solutions for OEM equipment suppliers.

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two new plastic-packaged 50V/60W GaN HEMT devices that provide the intrinsic GaN value of power and bandwidth in a low cost package platform. Supplied in miniature (4.5mm x 6.5mm), economical, plastic SMT packages, these new devices are ideal for LTE, small cell base transceiver station (BTS), radar, public safety radio, and other communications applications.

M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the MAAP-011246, a new 2-Watt power amplifier, and the MAAP-011139, a new 4-Watt power amplifier in a SMT package. These 4-stage, fully matched power amplifiers are ideally suited for Ka-Band SATCOM applications, and provide industry leading linearity for either final power amplification stages or driver stages in higher power applications.

M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the newNPT2022, a wideband transistor optimized for DC-2 GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process.