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Abstract:

An optical scanning device of the present invention includes: an
oscillating mirror that reflects incident light; a first beam unit that
is coupled to one end of the oscillating mirror; a second beam unit that
is coupled to another end of the oscillating mirror; a first driving unit
that is coupled to the first beam unit, is disposed between the first
beam unit and the first adjusting unit, and that causes the oscillating
mirror to oscillate; and a first adjusting unit that is coupled to the
first driving unit, and adjusts a modulus of elasticity of the first beam
unit by elastically deforming the first beam unit.

Claims:

1. An optical scanning device comprising: an oscillating mirror that
reflects incident light; a first beam unit that is coupled to one end of
the oscillating mirror; a second beam unit that is coupled to another end
of the oscillating mirror; a first driving unit that is coupled to the
first beam unit; and a first adjusting unit that is coupled to the first
driving unit, the first driving unit being disposed between the first
beam unit and the first adjusting unit, and causing the oscillating
mirror to oscillate, and the first adjusting unit adjusting a modulus of
elasticity of the first beam unit by elastically deforming the first beam
unit.

2. The optical scanning device according to claim 1, wherein the first
driving unit includes a piezoelectric element.

3. The optical scanning device according to claim 1, wherein the first
adjusting unit includes a piezoelectric element.

4. The optical scanning device according to claim 1, wherein the first
beam unit includes a beam supporting unit having a structure that
branches into at least two or more toward the first driving unit.

5. The optical scanning device according to claim 1, wherein the first
driving unit is formed at at least two or more of symmetric positions
with respect to the first beam unit.

6. The optical scanning device according to claim 1, wherein the first
adjusting unit is formed at at least two or more of symmetric positions
with respect to the first beam unit.

7. The optical scanning device according to claim 1, wherein the
oscillating mirror, the first beam unit, the first driving unit, and the
first adjusting unit are integrally formed.

8. The optical scanning device according to claim 1, further comprising:
a resonance frequency detecting unit that detects the resonance frequency
of the oscillating mirror, wherein the first adjusting unit is controlled
so that the resonance frequency becomes constant.

9. The optical scanning device according to claim 1, further comprising:
a second driving unit that is coupled to the second beam unit and that
causes the oscillating mirror to oscillate.

10. The optical scanning device according to claim 9, further comprising:
a second adjusting unit that that is coupled to the second driving unit,
elastically deforms the second beam unit, and adjusts a modulus of
elasticity of the second beam unit.

11. The optical scanning device according to claim 9, wherein the second
driving unit includes a piezoelectric element.

12. The optical scanning device according to claim 10, wherein the second
adjusting unit includes a piezoelectric element.

13. The optical scanning device according to claim 9, wherein the second
beam unit includes a beam supporting unit having a structure that
branches into at least two or more toward the second driving unit.

14. The optical scanning device according to claim 9, wherein the second
driving unit is formed at at least two or more of symmetric positions
with respect to the second beam unit.

15. The optical scanning device according to claim 9, wherein the second
adjusting unit is formed at at least two or more of symmetric positions
with respect to the first beam unit.

16. The optical scanning device according to claim 9, wherein the
oscillating mirror, the second beam unit, the second driving unit, and
the second adjusting unit are integrally formed.

17. The optical scanning device according to claim 9, further comprising:
a resonance frequency detecting unit that detects a resonance frequency
of the oscillating mirror, wherein the second adjusting unit is
controlled so that the resonance frequency becomes constant.

Description:

TECHNICAL FIELD

[0001] The present invention relates to an optical scanning device that,
by changing the angle between incident light and a reflecting surface,
performs scanning of that reflected light.

BACKGROUND ART

[0002] Optical scanning devices that scan light are widely used in digital
copiers, laser printers, bar code readers, scanners, projectors, and the
like. As this optical scanning device, conventionally a polygon mirror or
galvanometer mirror that uses a motor has generally been used.

[0003] On the other hand, with the developments in ultra-fine processing
technology in recent years, optical scanning devices manufactured by
applying MEMS technology have made significant advances. Among these, an
optical scanning device that scans light by causing an oscillating mirror
to oscillate in a reciprocating manner with a beam unit serving as a
rotating shaft has been attracting attention. Compared with a
conventional optical scanning device that uses rotation of a polygon
mirror or the like using a motor, due to an oscillating mirror that is
formed by MEMS technology having a simple structure and integral molding
by a semiconductor process being possible, there are the advantages of
miniaturization and cost reduction being easy, and speeding up being easy
due to the miniaturization.

[0004] In an oscillating mirror that utilizes MEMS technology, the drive
frequency and the resonance frequency of the structure are generally made
to match in order to increase the oscillation angle. The resonance
frequency fr of the mirror is given by the following equation from the
torsion spring constant k of the beam unit, and the inertia moment IM of
the oscillating mirror.

fr=1/(2π (k/IM)) (1)

[0005] With the width of the beam unit being w, the thickness t, the
length L, and assuming t<w, the torsion spring constant k in Equation
(1) is given by the following equation.

k=(Gβtw3)/L (2)

[0006] Here, G is the transverse elasticity constant, and is represented
by G=E/(2(1+v)), using the Young's modulus E and the Poisson's ratio v of
the material that forms the beam unit. β is a constant determined
from the ratio of w and t of the beam.

[0007] At the time of oscillation of the oscillating mirror, the beam unit
undergoes torsional deformation at high speed and for a long time.
However, since the beam unit and the oscillating mirror are integrally
molded with single-crystal silicon, it is considered to possess
sufficient endurance to this deformation.

[0008] Thus, the resonance frequency is determined from the inertia moment
of the oscillating mirror and the torsion spring constant of the beam
unit and the like. However, on the other hand, it is not possible to
avoid variations in these values due to differences in the processing
accuracy and ambient temperature. For that reason, variations also occur
in the resonance frequency.

[0009] Therefore, in order to solve the problem mentioned above, an
optical scanning device has been proposed in which an adjusting mechanism
for the resonance frequency of the oscillating mirror is provided. With
the adjusting mechanism of this optical scanning device, it is possible
to adjust fluctuations of the resonance frequency due to variations in
the processing accuracy of members and changes in the ambient
temperature, and to keep the resonance frequency constant.

[0010] As such a constitution, for example Patent Document 1 discloses a
resonance-type optical scanner that has a first beam unit, a second beam
unit, a first piezoelectric element unit, and a power supply unit. The
first beam unit is coupled to one end of the oscillating mirror. The
second beam unit is coupled to the other end of the oscillating mirror.
The first piezoelectric element unit causes the first beam unit to
undergo elastic deformation. The power supply unit applies a voltage for
driving the oscillating mirror to the first piezoelectric element unit.
This resonance-type optical scanner, by the first supply unit applying a
direct voltage component to the first piezoelectric element unit to
produce a tensile force in the first beam unit and the second beam unit,
changes the modulus of elasticity of the beam units, and performs
adjustment of the resonance frequency.

[0011] However, in Patent Document 1, the piezoelectric element (metal
thin film or ceramic polycrystalline body) that is laminated on the
surface of the beam unit is directly influenced by the torsional
deformation of the beam units during resonance, and so defects occur from
the grain boundary, and a fatigue breakdown easily occurs. That is to
say, the problems occur of the adjustment accuracy of the resonance
frequency falling, and adjustment no longer being possible.

[0012] In contrast to this, Patent Document 2 discloses a device that
includes a first beam unit that is coupled to one end of an oscillating
mirror, a second beam unit that is coupled to the other end of the
oscillating mirror, and a first structure for causing the first beam unit
to undergo elastic deformation. This device produces tensile force in the
first beam unit by applying a voltage to the first structure, to perform
adjustment of the resonance frequency. In this case, the oscillating
mirror is assumed to be driven by electrostatic force with electrodes
arranged on the lower unit or side surfaces of the mirror.

[0015] However, in the constitution of the device of Patent Document 2,
even in the case of driving the oscillating mirror by static electricity
from the bottom or side surfaces of the mirror, due to the first
structure and the first beam unit being coupled, swinging of the first
structure itself cannot be avoided. For that reason, there has been the
problem of the piezoelectric element of the first structure being
influenced by the mirror oscillation, and the adjustment accuracy of the
resonance frequency falling.

[0016] The present invention has been achieved in view of the above
circumstances, and an object thereof is to provide an optical scanning
device that can adjust the resonance frequency with a high degree of
accuracy by a simple constitution, and can maintain a stable operation.

Means for Solving the Problem

[0017] In order to solve the aforementioned problems, an optical scanning
device of the present invention includes: an oscillating mirror that
reflects incident light; a first beam unit that is coupled to one end of
the oscillating mirror; a second beam unit that is coupled to another end
of the oscillating mirror; a first driving unit that is coupled to the
first beam unit, is disposed between the first beam unit and the first
adjusting unit, and that causes the oscillating mirror to oscillate; and
a first adjusting unit that is coupled to the first driving unit, and
adjusts a modulus of elasticity of the first beam unit by elastically
deforming the first beam unit.

Effect of the Invention

[0018] According to the present invention, since the first adjusting unit
is disposed sandwiching the first driving unit with the first beam unit
on the opposite side, during the oscillation of the beam unit, the first
adjusting unit is hindered from being affected by deformation of the beam
unit. Thereby, since it is possible to perform adjustment of the
resonance frequency by the first adjusting unit with a high degree of
accuracy, it is possible to suppress variations of the resonance
frequency due to temperature changes and the fabrication process and the
like in the conventional manner. As a result, it is possible to provide a
highly reliable optical scanning device that can maintain a stable
operation.

[0019] Also, structurally, the simple constitution is adopted of arranging
the first adjusting unit that adjusts the modulus of elasticity of the
first beam unit at the first driving unit on the opposite side of the
first beam unit, and so there is an advantage of not requiring a new
process. Accordingly, it is possible to improve the work efficiency and
suppress an increase in costs by the addition of the first adjusting
unit.

BRIEF DESCRIPTION OF THE DRAWINGS

[0020] FIG. 1 is a block diagram that shows the overall constitution of an
image display device in exemplary embodiments of the present invention.

[0021]FIG. 2 is a plan view that shows the constitution of an optical
scanning element in a first exemplary embodiment of the present
invention.

[0023]FIG. 4A is a process diagram for describing a manufacturing method
of the optical scanning element shown in FIG. 2, and a cross-sectional
diagram corresponding to FIG. 3.

[0024] FIG. 4B is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0025]FIG. 4c is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0026]FIG. 4D is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0027]FIG. 4E is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0028]FIG. 5A is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0029] FIG. 5B is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0030]FIG. 5c is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0031] FIG. 5D is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0032] FIG. 5E is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0033] FIG. 6A is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0034]FIG. 6B is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0035]FIG. 6c is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0036] FIG. 6D is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0037]FIG. 6E is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0038]FIG. 7A is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0039] FIG. 7B is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0040] FIG. 7C is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0041]FIG. 7D is a process diagram for describing the manufacturing
method of the optical scanning element shown in FIG. 2, and a
cross-sectional diagram corresponding to FIG. 3.

[0042]FIG. 8 is a diagram that shows the constitution of an optical
scanning element in a second exemplary embodiment of the present
invention, and a cross-sectional diagram corresponding to FIG. 3.

[0043]FIG. 9 is a diagram that shows the constitution of an optical
scanning element in a third exemplary embodiment of the present
invention, and a cross-sectional diagram corresponding to FIG. 3.

[0044]FIG. 10 is a diagram that shows the constitution of an optical
scanning element in a fourth exemplary embodiment of the present
invention, and a cross-sectional diagram corresponding to FIG. 3.

[0045]FIG. 11 is a diagram that shows the constitution of an optical
scanning element in a fifth exemplary embodiment of the present
invention, and a cross-sectional diagram corresponding to FIG. 3.

EMBODIMENTS FOR CARRYING OUT THE INVENTION

[0046] Next, exemplary embodiments of the present invention shall be
described with reference to the figures.

First Exemplary Embodiment

[0047] Firstly, the overall constitution and operation of an image display
device in which optical scanning devices of exemplary embodiments of the
present invention are incorporated shall be described. FIG. 1 is a block
diagram that shows the overall constitution of the image display device
in the exemplary embodiments of the present invention.

[0048] As shown in FIG. 1, the image display device 1 of the present
exemplary embodiment includes a light ray generating device 11 that
generates light ray that is modulated in accordance with a video signal S
that is supplied from outside. The light ray generating device 11
includes a signal processing circuit 21, a light source unit 31, a
collimated optical system 12, and a combining optical system 13. The
signal processing circuit 21 generates a signal that serves as the
element for constituting an image based on the video signal S. The light
source unit 31 converts the three video signals (R, G, B) that are output
from the signal processing unit 21 into respective light beams. The
collimated optical system 12 makes the light beams parallel light beams.
The combining optical system 13 combines the light rays. The imaging
display device 1 also includes a horizontal scanning unit 14 that scans
in the horizontal direction in order to display the image of the light
that is combined by the combining optical system 13, and a vertical
scanning unit 15 that scans in the vertical direction the light rays
scanned in the horizontal direction by the horizontal scanning unit 14.
The image display device 1 emits on a screen 16 the light rays scanned in
the horizontal direction and the vertical direction by the horizontal
scanning unit 14 and the vertical scanning unit 15.

[0051] The light beams that are respectively emitted from the lasers 32 to
34 are made parallel by the collimated optical system 12, and then made
incident on dichroic mirrors 36 to 38 of the combining optical system 13.
By these dichroic mirrors 36 to 38, the laser lights are selectively
reflected or passed in relation to their wavelength.

[0052] The red, green and blue light rays that are made incident on the
three dichroic mirrors 36 to 38 are wavelength selectively reflected or
passed, and output to the horizontal scanning unit 14.

[0053] The horizontal scanning unit 14 scans a light beam in the
horizontal direction in order to project as an image the light beam made
incident from the combining optical system 13. The vertical scanning unit
15 scans a light beam in the vertical direction in order to project as an
image the light beam made incident from the combining optical system 13.

[0056] The vertical scanning unit 15 includes a vertical scanning element
43 for scanning a light beam in the vertical direction, and a vertical
scanning driving circuit 44 for driving the vertical scanning element 43.
The horizontal scanning driving circuit 41 drives based on the horizontal
synchronizing signal that is output from the horizontal scanning
synchronizing circuit 25. The vertical scanning driving circuit 44 drives
based on the vertical synchronizing signal that is output from the
vertical scanning synchronizing circuit 26.

[0057] (Optical Scanning Element)

[0058] Next, the aforementioned horizontal scanning element (hereinbelow
referred to as the optical scanning element) shall be described. FIG. 2
is a plan view that shows the constitution of an optical scanning element
in the first exemplary embodiment. FIG. 3 is sectional view taken along
line A-A in FIG. 2.

[0059] As shown in FIG. 2 and FIG. 3, the optical scanning element 51 is a
resonance-type optical scanning element. The optical scanning element 51
is formed by the bonding of an upper frame 52 and a lower frame 53 (refer
to FIG. 3) via an oxide film 54 that includes SiO2 or the like
(refer to FIG. 3). The upper frame 52 and the lower frame 53 are
integrally formed by single-crystal silicon substrate that is capable of
microfabrication and has suitable rigidity.

[0060] The upper frame 52 includes a base unit 56 with a rectangular frame
shape, an oscillating mirror 57 that has a rectangular shape in plan
view, and a pair of bridging units 59. The oscillating mirror 57 is
arranged in the center portion of the base unit 56. The pair of bridging
units 59 extend from opposite sides of the base unit 56 (hereinbelow
referred to as the short side units 58) to the oscillating mirror 57, and
support the oscillating mirror 57 from both ends.

[0061] The bridging units 59 have a pair of beam units (a first beam unit
and a second beam unit) 62, driving units (a first driving unit and a
second driving unit) 63, and adjusting units (a first adjusting unit and
a second adjusting unit) 64. The pair of beam units 62 extend along
mutually opposite directions from both end sides of the oscillating
mirror 57 along the extending direction of the long side units 61
(lengthwise direction). The driving units 63, by being respectively
coupled with these beam units 62, drive the oscillating mirror 57. The
adjusting units 64 couple each driving unit 63 and each short side unit
58 of the base unit 56, and adjust the modulus of elasticity of the beam
unit 62. These adjusting units 64, driving units 63 and beam units 62
extend so that the widths thereof from the short side unit 58 to the
oscillating mirror 57 gradually decrease, and are integrally formed from
the base unit 56 to the oscillating mirror 57. Since the bridging units
59 are members that are symmetrical centered on the oscillating mirror
57, the constitution of one bridging unit 59 shall be described in the
following description.

[0062] The oscillating mirror 57 is equipped with a mirror substrate 66
and a reflecting film 67 that is formed on the mirror substrate 66. By
the beam units 62 that are integrally formed at both side surfaces
thereof, the mirror substrate 66 is supported in the vicinity of the
center of each side. The reflecting film 67 is formed by a metal thin
film that has a sufficient reflectance with respect to the light that is
used. The dimensions of the oscillating mirror 57 and the two beam units
62 are designed so that the required resonance frequency is obtained.

[0063] The driving unit 63 includes a driving unit substrate 71 that is
formed to be wider than the beam unit 62, and a piezoelectric element 72
that is formed via an oxide film 60 on the driving unit substrate 71. The
distal end of the driving unit substrate 71 is integrally coupled to the
beam unit 62. On the other hand, the basal end of the driving unit
substrate 71 is integrally coupled to the adjusting unit 64. As shown in
FIG. 3, the piezoelectric element 72 is formed by a lower electrode 73, a
piezoelectric layer 74, and an upper electrode 75 being successively
laminated on the oxide film 60 of the driving unit substrate 71. An
electrode pad 76 is formed using an Al thin film or the like that is
formed by mask deposition such as sputtering on the piezoelectric element
72 (upper electrode 75).

[0064] The adjusting unit 64 includes an adjusting unit substrate 79 that
is formed between the driving unit 63 and the base unit 56, to be wider
than the driving unit 63, and a piezoelectric element 80 that is formed
via the oxide film 60 on the adjusting unit substrate 79. The distal end
of the adjusting unit substrate 79 is integrally coupled to the driving
unit substrate 71. The basal end of the adjusting unit substrate 79 is
integrally coupled to the inner circumferential surface of the short side
unit 58 of the base unit 56. The piezoelectric element 80 is formed by a
lower electrode 81, a piezoelectric layer 82 and an upper electrode 83
being successively laminated on the oxide film 60 of the adjusting unit
substrate 79. An electrode pad 84 is formed by an Al thin film or the
like that is formed by mask deposition such as sputtering on the upper
electrode 83. The electrode pads 76 and 84 may be formed at adequate
positions on the upper electrodes 75 and 83 in the piezoelectric region
(driving unit 63 and adjusting unit 64).

[0065] A land unit 86 that is connected to the lower electrodes 73 and 81
of the piezoelectric elements 72 and 80 is formed via an oxide film 60 at
the coupling portion with the adjusting unit 64 at the short side unit
58. The land unit 86 functions as a common electrode with the driving
unit 63 and the adjusting unit 64. The land unit 86 includes an electrode
film 87 that is continuously formed from the bottom electrodes 73 and 81
of the driving unit 63 and the adjusting unit 64, and an electrode pad 88
that is formed on this electrode film 87. That is to say, while the
bottom electrodes 73 and 81 of the driving unit 63 and the adjusting unit
64 and the electrode film 87 of the land unit 86 are integrally formed,
the piezoelectric layers 74 and 82 and the upper electrodes 75 and 83 are
not formed on the land unit 86. Between the driving unit 63 and the
adjusting unit 64, among the piezoelectric elements 72 and 80, the
piezoelectric layers 74 and 82 and the upper electrodes 75 and 83 are
separated from each other. Each piezoelectric element 72 and 80 is
constituted to be independently drivable. Here, as the aforementioned
electrode pads 76, 84, 88, an Al thin film is formed by sputtering, but
it is also possible to select another material such as Pt provided
sufficient adhesion and conduction with the silicon substrate are
obtained. Also, regarding the film formation method, it may be formed by
another method. Voltage is impressed from the aforementioned horizontal
scanning driving circuit 41 to the piezoelectric elements 72 and 80 via
the electrode pads 76, 84, 88.

[0066] The adjusting unit 64 is formed with a width and thickness so as
not to be influenced by deformation and the like during oscillation of
the beam unit 62. As described above, the oxide film 60 is formed on the
rear faces of the piezoelectric elements 72 and 80 and the land unit 86
at the upper frame 52, and via this oxide film 60, the piezoelectric
elements 72 and 80, the electrode film 87 and the electrode pads 76, 84,
88 are formed. The aforementioned base unit 56, the mirror substrate 66,
the driving unit substrate 71, and the adjusting unit substrate 79 are
integrally formed by a semiconductor process.

[0067] The lower frame 53 is a rectangular frame-shaped member that is
formed in the same shape as the base unit 56 in plan view. The lower
frame 53 has an opening portion 53a where the region in which the
oscillating mirror 57 oscillates is removed. The thickness of the lower
frame 53 is designed to be thicker than the oscillating range of the
oscillating mirror 57, and in consideration of not causing problems when
handling the oscillating mirror 57.

[0068] (Operation Method of Optical Scanning Element)

[0069] Next, the operation of the aforementioned optical scanning element
shall be described.

[0070] In the constitution of FIG. 2 and FIG. 3, an alternating voltage is
applied between the electrodes 73 and 75 that are arranged on the front
face or rear face of the piezoelectric layer 74 of the driving unit
substrate 71, from the horizontal scanning driving circuit 41 via the
electrode pads 76 and 88. Due to the application of this alternating
voltage, the piezoelectric layer 74 is driven, and the length of the
piezoelectric layer 74 changes along the extension direction of the beam
unit 62. In this case, by applying an alternating voltage to the
piezoelectric layer 74 of the driving unit 63, internal stress that is
produced in the driving unit 63 acts to cause the oscillating mirror 57
to oscillate.

[0071] Thus, after the oscillating mirror 57 is activated, it is possible
to increase the oscillation angle by resonant oscillation. Here, the case
was described of using a piezoelectric element 72 that includes the upper
electrode 75 and the lower electrode 73 sandwiching a piezoelectric layer
74 as the drive force for causing the oscillating mirror 57 to undergo
resonant oscillation, but it is not limited thereto. Electromagnetic
force or electrostatic force may be used as the driving force.

[0072] (Method of Adjusting Resonance Frequency)

[0073] The resonance frequency of the oscillating mirror 57 is determined
by the respective materials and shapes such as the inertia moment of the
oscillating mirror 57 and the rigidity of the beam unit 62. Accordingly,
due to the processing accuracy and temperature changes, there may be
cases of the target resonance frequency not being obtained.

[0074] The method of solving this problem is described as follows.

[0075] By applying a direct voltage to the piezoelectric element 80 of the
adjusting unit 64 from the horizontal scanning driving circuit 41 via the
electrode pads 84 and 88, the piezoelectric layer 82 is driven, whereby
the length of the piezoelectric layer 74 changes along the extension
direction of the beam unit 62 and stress is produced in the adjusting
unit 64. This stress is transmitted to the beam unit 62 via the driving
unit 63, and accompanying that, the beam unit 62 receives the stress.
Specifically, the length in the extension direction of the beam unit 62
and the lateral cross-sectional shape of the beam unit 62 change.
Specifically, in the case of the adjusting unit 64 becoming longer,
compressive internal stress acts on the beam unit 62, and in the case of
the adjusting unit 64 becoming shorter, tensile internal stress acts on
the beam unit 62. Thereby, due to the modulus of elasticity of the beam
unit 62 changing, it is possible to change the resonance frequency. The
modulus of elasticity of the beam unit 62 changes by controlling the
voltage that is applied to the piezoelectric element 80.

[0076] Therefore, if it is possible to detect the resonance frequency of
the optical scanning element 51, by applying feedback to the applied
voltage that is applied to the piezoelectric element 80 of the adjusting
unit 64 in accordance with the detection value, it is possible to
maintain the resonance frequency at a fixed value. As one method for
resonance frequency detection, for example a structure as shown in FIG. 3
is conceivable. The oscillating mirror 57 that constitutes an electrode
plane serves as one electrode, and an opposing electrode 90 is installed
facing this electrode. By detecting the electrostatic capacitance that
changes in accordance with changes between the electrode 90 and the
oscillating mirror 57 using an electrostatic capacitance detecting
circuit (resonance frequency detecting unit) 91, it is possible to detect
the resonance frequency. Thereby, the signal to the adjusting unit 64 is
suitably transmitted to the adjusting system, and it is possible to
maintain the resonance frequency at a desired value.

[0077] This electrostatic capacitance detecting circuit 91 is one example
of a resonance frequency detecting unit, and the resonance frequency may
be detected by another method. It is also possible to detect the
resonance frequency by the oscillation angle of the oscillating mirror
57. With the driving frequency set, it is possible to perform control so
that the resonance frequency matches the driving frequency by controlling
the piezoelectric element 80, while detecting the oscillation angle with
a photodetection element that detects the scanning beam from the
oscillating mirror 57 or a strain detection element that detects the
strain of a twisted beam. Moreover, it is also possible to accommodate a
reduction in the oscillation angle due to fluctuations in the
environmental temperature. For that reason, feedback control of the
displacement of the piezoelectric element 80 should be performed so that
the oscillation angle maintains a fixed value.

[0078] (Method of Manufacturing Optical Scanning Element)

[0079] A method of manufacturing the aforementioned optical scanning
element shall be described referring to FIGS. 4A to 4E, and FIGS. 5A to
5E.

[0080] Step 1

[0081] First, as shown in FIG. 4A, an SOI (silicon on insulator) substrate
103 is prepared in which a support Si layer 100 (for example, with a
thickness of 475 μm) and an active layer 101 (for example, with a
thickness of 50 μm) are joined by an oxide film 102 (for example, with
a thickness of 2 μm). In the present exemplary embodiment, the case is
described of forming a plurality of optical scanning elements 51
collectively from one SOI substrate 103 using a semiconductor process.
The support Si layer 100 is used as a device substrate that forms the
lower frame 53. The active layer 101 is used as a device substrate that
forms the upper frame 52. An oxidation treatment is performed in advance
on a surface of the active layer 101 to form the oxide film 60.

[0082] Step 2

[0083] Next, as shown in FIG. 4B, using a sputtering method or the like,
sputtered films 105 to 107 of the lower electrodes 73 and 81, the
piezoelectric layers 74 and 82, and the upper electrodes 75 and 83 and
the electrode film 87 of the land unit 86 are laminated over the entire
area of the active layer 101.

[0084] Step 3

[0085] Next, as shown in FIG. 4c, a resist 110 is applied on the sputtered
film 107 of the upper electrodes 75 and 83, and patterning is performed
so that the resist 110 remains at the formation regions of the upper
electrodes 75 and 83 by performing exposure and development using
photolithography.

[0086] Step 4

[0087] As shown in FIG. 4D, using the resist 110 as a mask, the sputtered
films 106 and 107 of the upper electrodes 75 and 83 and the piezoelectric
layers 74 and 82 are etched.

[0088] Step 5

[0089] Then, as shown in FIG. 4E, the resist 110 is exfoliated. Thereby,
the upper electrodes 75 and 83, and the piezoelectric layers 74 and 82
are formed.

[0090] Step 6

[0091] Next, as shown in FIG. 5A, a resist 111 is applied on the entire
region of the active layer 101 so as to cover the upper electrodes 75 and
83. By performing exposure and development using photolithography,
patterning is performed so that the resist 111 remains at the formation
regions of the lower electrodes 73 and 81 and the electrode film 87 and
the oxide film 60.

[0092] Step 7

[0093] Next, as shown in FIG. 5B, using the resist 111 as a mask, the
lower electrodes 73 and 81, the sputtered film 107 of and the electrode
film 87, and the oxide film 60 are etched.

[0094] Step 8

[0095] Then, as shown in FIG. 5c, the resist 111 is exfoliated. Thereby,
the lower electrodes 73 and 81, the electrode film 87, and the oxide film
60 are formed.

[0096] Step 9

[0097] Next, a reflecting film 67 is formed at the formation region of the
oscillating mirror 57 on the active layer 101. Specifically, as shown in
FIG. 5D, a resist 112 is applied on the entire region of the active layer
101. By performing exposure and development using photolithography,
patterning is performed so that the resist 112 remains at regions other
than the formation region of the reflecting film 67 (the formation region
of the oscillating mirror 57). That is to say, an opening portion 112a of
the resist 112 is formed at the formation region of the reflecting film
67.

[0098] Step 10

[0099] Next, as shown in FIG. 5E, using the resist 112 as a mask, when
silver or the like is deposited by vapor deposition or the like, a
vapor-deposited film 113 is formed on the active layer 101 through the
opening portion 112a of the resist 112.

[0100] Step 11

[0101] Then, as shown in FIG. 6A, the resist 112 is exfoliated. Thereby,
the reflecting film 67 is formed at the formation region of the
oscillating mirror 57.

[0102] Step 12

[0103] Next, the outer shapes of the oscillating mirror 57 and the
bridging unit 59 are formed. Specifically, as shown in FIG. 6B, a resist
114 is applied on the entire region of the active layer 101. By
performing exposure and development using photolithography, patterning is
performed so that the resist 114 remains at the formation region of the
upper frame 52 (the base unit 56, the oscillating mirror 57 and the
bridging unit 59).

[0104] Step 13

[0105] Then, as shown in FIG. 6c, with the resist 114 serving as a mask
etching (DRIE: Deep Reactive Ion Etching) is performed. Oxide film
removal (BOE etching or the like) is performed as needed prior to that.

[0106] Step 14

[0107] After that, as shown in FIG. 6D, the resist 114 is exfoliated.
Thereby, a state results in which the oscillating mirror 57 is coupled to
the bridging unit 59 at the inner side of the base unit 56 (refer to FIG.
3).

[0108] Step 15

[0109] Next, the lower frame 53 is formed. Specifically, as shown in FIG.
6E, first, a protective film 115 that covers the upper frame 52 is
formed.

[0110] Step 16

[0111] Next, as shown in FIG. 7A, a resist 116 is applied over the entire
region of the undersurface of the support Si layer 100. By performing
exposure and development using photolithography, patterning is performed
so that the resist 116 remains at the formation region of the lower frame
53.

[0112] Step 17

[0113] Next, as shown in FIG. 7B, by etching (DRIE) the support Si layer
100 with the resist 116 serving as a mask, the lower frame 53 is formed.

[0114] Step 18

[0115] Then, as shown in FIG. 7C, etching (DRIE) is again performed with
the resist 116 serving as a mask, and the oxide film 102 on the interior
side of the lower frame 53 is removed.

[0116] Step 19

[0117] As shown in FIG. 7D, the resist 116 and the protective film 115 are
exfoliated. Thereby, a plurality of the optical scanning elements 51 are
formed on the SOI substrate 103 in a coupled state.

[0118] Step 20

[0119] Finally, the SOI substrate 103 is fragmented into individual
optical scanning elements 51 by dicing. Thereby, it is possible to
manufacture a plurality of the aforementioned optical scanning elements
from a single SOI substrate 103.

[0120] In this way, the present exemplary embodiment has a constitution
that provides the adjusting unit 64 that adjusts the modulus of
elasticity of the beam unit 62 sandwiching the driving unit 63, with the
beam unit 62 the opposite side.

[0121] With this constitution, the driving unit 63, to which an
alternating voltage is applied during driving of the oscillating mirror
57, and the adjusting unit 64, to which a direct voltage is applied to
adjust the modulus of elasticity of the beam unit 62, are separated.
Accordingly, the influence of torsional oscillation of the beam unit 62
that acts on the adjusting unit 64 is reduced. Thereby, it is possible to
perform adjustment of the resonance frequency by the adjusting unit 64
with high accuracy. Therefore, it is possible to suppress variations of
the resonance frequency due to temperature changes and the fabrication
process and the like, as with before. Moreover, the adjusting unit 64 is
formed with a width and thickness so as not to be affected by deformation
and the like during oscillation of the beam unit 62. For that reason, it
is possible to reliably prevent deformation of the adjusting unit 64
associated with oscillation of the beam unit 62.

[0122] Accordingly, it is possible to provide the reliable optical
scanning element 51 that can raise the adjustment accuracy of the
resonant frequency and maintain a stable operation.

[0123] Also, since the driving unit 63 is provided at each bridging unit
59, stress is imparted from both end sides to the oscillating mirror 57.
For that reason, it is possible to increase the rotation angle
(oscillation angle) of the oscillation mirror 57, and drive it with a
high degree of accuracy.

[0124] Moreover, the adjusting unit 64 is provided at each bridging unit
59. For that reason, it is possible to increase the internal stress that
acts on the beam unit 62, and it is possible to raise the frequency
adjustment rate. Also, it is possible to evenly adjust the modulus of
elasticity of each beam unit 62. Thereby, it is possible to improve the
scanning accuracy.

[0125] Also, the driving unit 63 and the adjusting unit 64 respectively
include the piezoelectric elements 72 and 80. For this reason, it is
possible to independently perform driving of the oscillation mirror 57 by
the driving unit 63 and adjustment of the resonance frequency by the
adjusting unit 64. Moreover, since the piezoelectric elements 72 and 80
are integrally formed by a semiconductor process, it is possible to
suppress an increase in the fabrication processes, and achieve a cost
reduction.

[0126] In the present exemplary embodiment, by integrally forming the
optical scanning element 51 with a semiconductor process, it is possible
to achieve miniaturization and a cost reduction of the optical scanning
element 51. Also, due to the reduced size, it is possible to achieve a
speed increase. Also, since the stress that acts from the driving unit 63
to the beam unit 62 is directly transmitted, it is possible to obtain
high driving efficiency.

[0127] Furthermore, in the present exemplary embodiment, it is possible to
integrally form the adjusting unit 64 between the driving unit 63 and the
base unit 56. For that reason, a simplification of the constitution is
achieved, and a new process is not required for adding the adjusting unit
64. Accordingly, it is possible to improve the work efficiency and
suppress an increase in costs by the addition of the adjusting unit 64.

Second Exemplary Embodiment

[0128] Next, the second exemplary embodiment of the present invention
shall be described. FIG. 8 is a plan view of an optical scanning element
in the second exemplary embodiment. In the following description,
constitutions that are the same as those of the aforementioned first
exemplary embodiment shall be denoted by the same reference symbols, with
descriptions thereof being omitted.

[0129] As shown in FIG. 8, an optical scanning element 151 of the present
exemplary embodiment includes an oscillating mirror 57, a pair of beam
units 62, a driving unit 63, a plurality of adjusting units 164a and
164b, and a base unit 56. The pair of beam units 62 are coupled to the
oscillating mirror 57. The driving unit 63, by being coupled to the beam
unit 62, drives the oscillating mirror 57. A plurality of adjusting units
164a and 164b adjust the modulus of elasticity of the beam unit 62. The
base unit 56 fixes the adjusting units 164a and 164b from the outer side
thereof.

[0130] A coupling unit 165 that collectively couples the basal end of the
driving unit 63 and the distal ends of the adjusting units 164a and 164b
is formed at the basal end side of the driving unit 63. A pair of
adjusting units 164a and 164b that extend in a fork shape from both end
sides in the width direction of the coupling unit 165 toward the long
side unit 61 of the base unit 56 are coupled to this coupling unit 165.
These adjusting units 164a and 164b are arranged at symmetric positions
with respect to the width direction of the driving unit 63. The driving
unit 63, the coupling unit 165, and the adjusting units 164a and 164b are
integrally formed in a Y shape in plan view. That is to say, the
adjusting units 164a and 164b extend along directions that intersect with
the extension directions of the long side unit 61 and the short side unit
58. In the optical scanning element 151 of the present exemplary
embodiment, the driving unit 63 (coupling unit 165) and the long side
unit 61 are bridged by the pair of adjusting units 164a and 164b. Each
adjusting unit 164a and 164b is constituted so that piezoelectric
elements 180a and 180b are formed on the adjusting unit substrates 179a
and 179b in the same way as the aforementioned first exemplary
embodiment. The electrode film 187 and the electrode pad 188 are formed
on the coupling unit 165. The electrode film 187 is continuously formed
from the lower electrodes 73 and 81 of the piezoelectric elements 180a
and 180b (refer to FIG. 3). The electrode pad 188 is formed on the
electrode film 190, and is used for applying a voltage to the adjusting
units 164a and 164b and the lower electrodes 73 and 81 of the driving
unit 63.

[0131] The present exemplary embodiment exhibits the same effect as the
aforementioned first exemplary embodiment. Moreover, according to the
present exemplary embodiment, since a plurality (two) of the adjusting
units 164a and 164b are arranged at symmetrical positions with respect to
the width direction of the driving unit 63 and the beam unit 62, it is
possible to stably support the driving unit 63 and the beam unit 62.
Thereby, since the internal stress that acts from the driving unit 63 is
evenly dispersed to each of the adjusting units 164a and 164b, it is
possible to further reduce the influence by the oscillation of the
oscillating mirror 57.

[0132] Also, the adjusting unit 64 is inclined in an oblique direction
with respect to the extension direction of the beam unit 62. For this
reason, compared to the case of the adjusting unit 64 being perpendicular
to the extension direction of the beam unit 62, among the stress that is
generated in the piezoelectric elements 180a and 180b of the adjusting
unit 64, it is possible to utilize the force component along the
extension direction of the beam unit 62 to the maximum extent as a
compressive and tensile component of the beam unit 62.

Third Exemplary Embodiment

[0133] Next, the third exemplary embodiment of the present invention shall
be described. FIG. 9 is a plan view of an optical scanning element in the
third exemplary embodiment. In the following description, constitutions
that are the same as those of the aforementioned first exemplary
embodiment shall be denoted by the same reference symbols, with
descriptions thereof being omitted. In the aforementioned second
exemplary embodiment, the constitution was described of the driving unit
63 and the base unit 56 being coupled by the two adjusting units 164a and
164b via the coupling unit 165, but it is not limited thereto. There may
be a plurality of two or more of the adjusting unit.

[0134] Specifically, as shown in FIG. 9, an optical scanning element 251
of the present exemplary embodiment includes three adjusting units 164a,
164b, and 164c. The two adjusting units 164a and 164b extend from both
end sides of the coupling unit 165 in the width direction to the long
side units 61 in an oblique direction. The adjusting unit 164c extends
from the basal end side of the coupling unit 165 to the short side unit
58. That is to say, the optical scanning element 251 of the present
exemplary embodiment includes the pair of adjusting units 164a and 164b
that are connected in parallel to symmetrical positions with respect to
the width direction of the driving unit 63, and the adjusting unit 164c
that is connected in series along the extension direction of the driving
unit 63. Each driving unit 164c is constituted by a piezoelectric element
180c being formed on an adjusting unit substrate 179c, in the same manner
as the aforementioned first exemplary embodiment.

[0135] The present exemplary embodiment, in addition to exhibiting the
same effect as the aforementioned second exemplary embodiment, can more
stably support the driving unit 63 and the beam unit 62, by supporting
the driving unit 63 with the three adjusting units 164a to 164c. Thereby,
the internal stress that acts from the driving unit 63 is evenly
dispersed to each of the adjusting units 164a to 164c, and it is possible
to further reduce the influence due to oscillation of the oscillating
mirror 57.

Fourth Exemplary Embodiment

[0136] Next, the fourth exemplary embodiment of the present invention
shall be described. FIG. 10 is a plan view of an optical scanning element
in the fourth exemplary embodiment. In the following description,
constitutions that are the same as those of the aforementioned first
exemplary embodiment shall be denoted by the same reference symbols, with
descriptions thereof being omitted. The present exemplary embodiment
differs from the aforementioned exemplary embodiments on the point of a
plurality of driving units being provided.

[0137] As shown in FIG. 10, an optical scanning element 351 of the present
exemplary embodiment includes the oscillating mirror 57, the beam unit
62, a coupling unit 365, a plurality of driving units 363a and 363b, and
the adjusting unit 64. The beam unit 62 is coupled to the oscillating
mirror 57. The coupling unit 365 is coupled to the basal end side of the
beam unit 62. The plurality of driving units 363a and 363b respectively
extend in directions perpendicular to the extension direction of the beam
unit 62 via the coupling unit 365. The adjusting unit 64 extends along
the extension direction of the beam unit 62 via the coupling unit 365.

[0138] The driving units 363a and 363b extend from both end sides in the
width direction of the coupling unit 365 toward the long side units 61
that are respectively opposite. The driving units 363a and 363b are
formed so as to bridge between the long side units 61 by the driving
units 363a and 363b and the coupling unit 365. The driving units 363a and
363b are constituted by piezoelectric elements 372a and 372b being formed
on the driving unit substrates 371a and 371b, in the same manner as the
aforementioned first exemplary embodiment. Electrodes films 377a and 377b
that are continuously formed from the lower electrode 73 (refer to FIG.
3) of the driving units 363a and 363b are formed on each long side unit
61. The electrode pads 378a and 378b are formed on the electrode films
377a and 377b.

[0139] The adjusting unit 64 is the same as that in the aforementioned
first exemplary embodiment, and is constituted by the piezoelectric
element 80 being formed on the adjusting unit substrate 79. An electrode
film 385 that is formed continuously from the lower electrode 81 of the
piezoelectric element 80 in each adjusting unit 64 (refer to FIG. 3) is
formed on each short side unit 58. An electrode pad 386 is formed on the
electrode film 385.

[0140] In this case, when a voltage is applied between the electrodes 73
and 75 (refer to FIG. 3) that are arranged on the front surface or rear
surface of the piezoelectric layer 74 (refer to FIG. 3) at the driving
units 363a and 363b, the piezoelectric layer 74 is driven, whereby the
length of the piezoelectric layer 74 changes along the extension
direction of the beam unit 62. Specifically, by applying an alternating
voltage to the piezoelectric element 372a of the driving unit 363a that
supports one beam unit 62, internal stress is generated. Also, an
alternating voltage of a reverse phase than the driving unit 363a is
applied to the piezoelectric element 372b of the driving unit 363b that
supports the one beam unit 62. Thereby, the internal stress that is
produced in the beam unit 62 produces an action that causes the
oscillating mirror 57 to oscillate. After being started in this way, it
is possible to increase the oscillation angle by resonance oscillation.

[0141] In contrast to this, an alternating voltage of the same phase as
the driving unit 363a that supports the one beam unit 62 is applied to
the driving unit 363a that supports the other beam unit 62, and an
alternating voltage of the same phase as the driving unit 363b that
supports the one beam unit 62 is applied to the driving unit 363b that
supports the other beam unit 62. By applying the alternating voltage in
this way, it is possible to reinforce the internal stress that is
produced in the beam unit 62. That is to say, while applying alternating
voltages of reverse phase between the pair of driving units 363a and
363b, alternating voltages of the same phase are applied to the
corresponding driving units (the driving units 363a and the driving units
363b) between each beam unit 62.

[0142] In this way, according to the present exemplary embodiment, in
addition to exhibiting the same effect as the aforementioned exemplary
embodiments, the adjusting unit 64 is arranged at a position
perpendicular to the extension direction of the driving unit 363a and
363b. Thereby, it is possible to further reduce the internal stress that
acts from the driving units 363a and 363b to the adjusting unit 64.
Moreover, since the adjusting unit 64 is arranged parallel to the
extension direction of the beam unit 62, the component that acts in the
extension direction of the beam unit 62, among the stress that is
produced by the adjusting unit 64, comes to be maximized. Accordingly, it
is possible to perform adjustment of the resonance frequency by the
adjusting unit 64 with a high degree of accuracy, and it is possible to
reduce the effect of the oscillating mirror 57 that acts on the adjusting
unit 64.

[0143] Also, among the driving force that the driving units 363a and 363b
impart to the beam unit 62, the lateral oscillation (in the direction
perpendicular to the extension direction of the beam unit 62 in plan
view) is inhibited, and the driving force for the oscillating mirror 57
is utilized to the maximum extent.

Fifth Exemplary Embodiment

[0144] Next, the fifth exemplary embodiment of the present invention shall
be described. FIG. 11 is a plan view of the optical scanning element in
the fifth exemplary embodiment. In the following description,
constitutions that are the same as those of the aforementioned first
exemplary embodiment shall be denoted by the same reference symbols, with
descriptions thereof being omitted.

[0145] As shown in FIG. 11, a beam unit 462 of an optical scanning element
451 in the present exemplary embodiment includes a beam unit main body
401, and two beam supporting units 402 and 403. The beam unit main body
401 extends respectively from both end portions of the oscillating mirror
57. The two beam supporting units 402 and 403 extend in a fork shape from
the basal end side of the beam unit main body 401, and are integrally
coupled to both sides in the width direction of the driving unit 63. That
is to say, each beam unit 462 is formed in a Y shape in plan view.

[0146] In this case, by applying a direct voltage via the electrode pads
84 and 88 to the piezoelectric element 80 of the adjusting unit 64,
internal stress is produced in the adjusting unit 64. This stress, after
being transmitted to the beam supporting units 402 and 403 via the
driving unit 63, is transmitted to the beam unit main body 401. By doing
so, the length or shape of the beam supporting units 402 and 403 or the
beam unit main body 401 changes.

[0147] Thereby, due to the modulus of elasticity of the beam supporting
units 402 and 403 or the beam unit main body 401 changing, it is possible
to change the resonance frequency. Also, the variation in the modulus of
elasticity of the beam supporting units 402 and 403 or the beam unit main
body 401 changes by regulating the voltage that is applied to the voltage
element 80.

[0148] In the present exemplary embodiment, in addition to exhibiting the
same effect as the aforementioned exemplary embodiments, the stress that
is added from the adjusting unit 64 to the beam supporting units 402 and
403 via the driving unit 63 is easily utilized for the shape change of
the beam unit main body 401, and so it is possible to improve the
efficiency of frequency adjustment. In this case, since the torsion
spring constant of the entire beam unit main body 401 and the beam
supporting units 402 and 403 changes, it is suitable for enhancing the
effect of the stress due to the adjusting unit 64.

[0149] By the aforementioned second to fourth exemplary embodiments also
having the same beam supporting units 402 and 403, it is clear that the
effect of the frequency adjustment by the adjusting unit 64 is magnified.

[0150] The exemplary embodiments of the present invention were described
in detail hereinabove with reference to the drawings, but specific
constitutions are not limited to only these exemplary embodiments, and
design modifications are also included within a range that does not
depart from the scope of the present invention.

[0151] For example, the first exemplary embodiment adopts a constitution
that couples the respective driving units 63 to each beam unit 62, but is
not limited thereto. It is also acceptable to adopt a constitution that
couples the driving unit 63 to at least one beam unit 62. Also, it has a
constitution that arranges the adjusting units 64 between the driving
units 63 and the base units 56, but is not limited thereto. It is
acceptable to adopt a constitution that arranges the adjusting unit 64
only between one driving unit 63 and one base unit 56.

[0152] It is also acceptable to adopt a constitution that suitably
combines constitutions of the aforementioned exemplary embodiments.

[0153] A description was given above for a constitution that adopts the
optical scanning device of the exemplary embodiments of the present
invention for a horizontal scanning element 51 in the image display
device 1, but it may also be adopted for a vertical scanning element 43.

[0154] The optical scanning device of the exemplary embodiments of the
present invention described above can be adopted as an optical scanning
device of a digital copier, a laser printer, a bar code reader and the
like, without being limited to the optical scanning element 51 in the
image display device 1.

[0155] Also, the driving unit and the adjusting unit may be provided in a
plurality or two or more.

[0156] This application is based upon and claims the benefit of priority
from Japanese patent application No. 2009-260881, filed on Nov. 16, 2009,
the disclosure of which is incorporated herein in its entirety by
reference.

INDUSTRIAL APPLICABILITY

[0157] The present invention can be applied to an optical scanning device.
With this optical scanning device, it is possible to adjust the resonance
frequency with a high degree of accuracy by a simple constitution, and it
is possible to maintain a stable operation.