Abstract

The effect of hydrogenation on the photoluminescence (PL) of InP:Mg, InP:Zn and undoped n-InP is presented. An increase in the near band edge PL intensity due to passivation of non-radiative centers was observed in all the samples. A donor-acceptor pair transition was observed before hydrogenation in the InP:Mg sample and after hydrogenation in the InP:Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation