We have developed a novel EB lithography simulator, which can analyze pattern profiles and CDs for an unlimited area. The simulator has a parallel Monte Carlo calculation mode with unequal mesh dividing, works on PC cluster hardware, and the new convolution algorithm. The simulation pattern profiles well-reproduced, observable chemically amplified resist pattern profiles. Simulated CD errors also well agree with measured PEC errors, when we compare the CDs for isolated line, line in lines/spaces and isolated space. Finally, the simulator also predicts the CD error difference between low-density and high-density global areas, which is caused by the fogging effect. The developed simulator demonstrates that the simulator can be applied for all CD performance analyses and has the potential to be a mainstream device for EB lithography simulation.