From hsiung at snf.stanford.edu Tue Jun 3 16:29:33 2003
From: hsiung at snf.stanford.edu (Alan Hsiung)
Date: Tue, 03 Jun 2003 16:29:33 -0700
Subject: Thin LTO
Message-ID:
Hi Folks,
I am just wondering if anybody has the experience to deposit as thin as
200A LTO.
If so, how kind of condition have you ever tried? How is the result?
Uniformity and etc.
I have been struggling to deposit such a thin LTO using LTO450P recipe,
but no much luck.
Any advice will be greatly appreciated.
Alan
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From hjkim at exch.hpl.hp.com Tue Jun 3 17:00:40 2003
From: hjkim at exch.hpl.hp.com (Kim, Han-jun)
Date: Tue, 3 Jun 2003 17:00:40 -0700
Subject: Thin LTO
Message-ID: <40700B4C02ABD5119F0000902787664406C01522@hplex1.hpl.hp.com>
Hi,
Deposition rate of LTO is way too fast, in general, to make such
thin film deposition controllable.
In my experience (not at SNF), HTO deposited at 800~900 C using
DCS and N2O (instead of silane and oxygen which are for LTO)
provided high-quality film (as uniform and dense as thermal oxide)
at a very controllable rate (down to ~ 4 A/min). I didn't try it at SNF
yet, but maybe Gladys or Maurice might give an answer if this process
is available here.
Thanks!
Han-Jun
=====================================
Han-Jun Kim Hewlett-Packard Lab.
(650) 857-8525 1501 Page Mill Rd.
(650) 857-8948 FAX MS 1198
hjkim at hpl.hp.com Palo Alto, CA 94304
=====================================
-----Original Message-----
From: Alan Hsiung [mailto:hsiung at snf.stanford.edu]
Sent: Tuesday, June 03, 2003 4:30 PM
To: tylanbpsg at snf.stanford.edu
Subject: Thin LTO
Hi Folks,
I am just wondering if anybody has the experience to deposit as thin as 200A LTO.
If so, how kind of condition have you ever tried? How is the result? Uniformity and etc.
I have been struggling to deposit such a thin LTO using LTO450P recipe, but no much luck.
Any advice will be greatly appreciated.
Alan
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From hjkim at exch.hpl.hp.com Tue Jun 3 17:13:08 2003
From: hjkim at exch.hpl.hp.com (Kim, Han-jun)
Date: Tue, 3 Jun 2003 17:13:08 -0700
Subject: Thin LTO
Message-ID: <40700B4C02ABD5119F0000902787664406C01523@hplex1.hpl.hp.com>
Hi again,
If maintaing the processing temperature low is the main reason for you
to go for LTO, you may want to try with PECVD oxide instead.
Even though there is no good-quality PECVD deposition machine available
at SNF yet, there must be many service vendors available outside where
you can get well-controlled and nearly stress-free oxide films. But such
films are relatively porous than annealed LTO, so it may not be good for
working with very small devices.
Best,
Han-Jun
=====================================
Han-Jun Kim Hewlett-Packard Lab.
(650) 857-8525 1501 Page Mill Rd.
(650) 857-8948 FAX MS 1198
hjkim at hpl.hp.com Palo Alto, CA 94304
=====================================
-----Original Message-----
From: Kim, Han-jun [mailto:hjkim at exch.hpl.hp.com]
Sent: Tuesday, June 03, 2003 5:01 PM
To: 'Alan Hsiung'
Cc: tylanbpsg at snf.stanford.edu
Subject: RE: Thin LTO
Hi,
Deposition rate of LTO is way too fast, in general, to make such
thin film deposition controllable.
In my experience (not at SNF), HTO deposited at 800~900 C using
DCS and N2O (instead of silane and oxygen which are for LTO)
provided high-quality film (as uniform and dense as thermal oxide)
at a very controllable rate (down to ~ 4 A/min). I didn't try it at SNF
yet, but maybe Gladys or Maurice might give an answer if this process
is available here.
Thanks!
Han-Jun
=====================================
Han-Jun Kim Hewlett-Packard Lab.
(650) 857-8525 1501 Page Mill Rd.
(650) 857-8948 FAX MS 1198
hjkim at hpl.hp.com Palo Alto, CA 94304
=====================================
-----Original Message-----
From: Alan Hsiung [mailto:hsiung at snf.stanford.edu]
Sent: Tuesday, June 03, 2003 4:30 PM
To: tylanbpsg at snf.stanford.edu
Subject: Thin LTO
Hi Folks,
I am just wondering if anybody has the experience to deposit as thin as 200A LTO.
If so, how kind of condition have you ever tried? How is the result? Uniformity and etc.
I have been struggling to deposit such a thin LTO using LTO450P recipe, but no much luck.
Any advice will be greatly appreciated.
Alan
-------------- next part --------------
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From maurice at snf.stanford.edu Wed Jun 4 17:01:23 2003
From: maurice at snf.stanford.edu (Maurice Stevens)
Date: Wed, 04 Jun 2003 17:01:23 -0700
Subject: 4 hour prime time limit
Message-ID: <3EDE8853.66403455@snf.stanford.edu>
Hey LPCVD users,
It is time for that friendly reminder that comes out when a few of users
start hogging up the all the good time on the systems.
There is a four hour limit on reservations during prime time [7 am -
7pm]. If more time is needed, please schedule it during the off hours.
thanks
-maurice
From cm_richter at att.net Tue Jun 10 11:39:14 2003
From: cm_richter at att.net (cm_richter at att.net)
Date: Tue, 10 Jun 2003 18:39:14 +0000
Subject: Cancelled LTO Reservation 10am to 2pm Friday June 13
Message-ID:
From ehkim at stanford.edu Fri Jun 13 12:57:58 2003
From: ehkim at stanford.edu (Eun-Ha Kim)
Date: Fri, 13 Jun 2003 12:57:58 -0700
Subject: removed a reseravation for monday, 11-1:30
Message-ID: <00c901c331e6$16ab73c0$316340ab@EUN>
wafers are not going to be ready by then.
From maurice at snf.stanford.edu Fri Jun 20 16:53:47 2003
From: maurice at snf.stanford.edu (Maurice Stevens)
Date: Fri, 20 Jun 2003 16:53:47 -0700
Subject: Yellow light. 20% uniformity
Message-ID: <3EF39E8B.5099361D@snf.stanford.edu>
Uniformity across wafer is 20%. It is normally 9 to 12%.
From cm_richter at att.net Sat Jun 21 07:30:55 2003
From: cm_richter at att.net (Claudia Richter)
Date: Sat, 21 Jun 2003 07:30:55 -0700
Subject: Cancelled LTO reservation Monday 5pm - 8pm
Message-ID:
wafers will not be ready on time.