Abstract

Pentacene-based low voltage organic field-effect transistors were realized using an anodized gate dielectric. The gate dielectric layer with a surface roughness of was obtained by anodizing an e-beam evaporated Tafilm. The device exhibited values of saturation mobility, threshold voltage, and ratio of , , and , respectively. The gate leakage current was reduced by more than 70% with a hexamethyldisilazane (HMDS) treatment on the layer. The HMDS treatment also resulted in enhanced mobility values and a larger pentacene grain size.

Received 07 June 2007Accepted 18 October 2007Published online 08 November 2007

Acknowledgments:

The authors would like to thank Debarshi Basu, Daniel Fine, and Suvid Nardkarni for helpful advice and discussion. One of the authors (Y.T.J) appreciates a Graduate Study Fellowship from Samsung Electronics, Inc. We also gratefully acknowledge the use of Microelectronics Research Center (MER) facilities at The University of Texas at Austin.