Toshiba Corporation today unveiled the latest generation of its BiCS FLASH three-dimensional flash memory with a stacked cell structure, a 64-layer device that will be first in the world to start sample shipments today. The new device incorporates 3-bit-per-cell (TLC) technology and achieves a 256-gigabit capacity, an advance that underscores the potential of Toshiba’s proprietary architecture.

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Toshiba Corporation today announced that it is gearing up for future expanded production of “BiCS FLASH™”, its proprietary 3D flash memory, by acquiring 150,000m2 of land adjacent to its Yokkaichi Operations memory production complex in Mie prefecture. The land borders the eastern and northern parts of the complex, and will cost approximately 3 billion yen.

Toshiba announced development of the world's first 48-layer three dimensional stacked cell structure flash memory called BiCS, a 2-bit-per-cell 128-gigabit (16 gigabytes) device. Sample shipments of products using the new process technology start today.