We demonstrate, for the first time, THz detection by Si CMOS, i.e. by both p-channel and n-channel Si MOS devices. Previous work demonstrated that Si n-MOS devices detect THz and sub-THz radiation via the excitation of plasma waves in the device channel, with responsivity and Noise Equivalent Power on the order of commercial pyroelectric detectors but capable of operating at much greater speed as shown by a theory of temporal response predicting the maximum operating frequency. The CMOS… CONTINUE READING