Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planar
mapping EBIC method with the control of accelerating voltages. Screw dislocation (SD), edge
dislocation (ED), and basal plane dislocation (BPD) were clearly observed through the 20nm-thick
Ni Schottky contact on SiC. From the analysis of BPD extended on {0001}, the intensity of EBIC
signals was proportional to the depth position of defect. In addition, the information of the
decomposition and combination for dislocations can be obtained from the fluctuation of EBIC signal
along the scanning position.