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Abstract:

A vapor deposition apparatus and method for efficiently performing a
deposition process to form a thin film with improved characteristics on a
substrate, and a method of manufacturing an organic light-emitting
display apparatus. The vapor deposition apparatus includes a chamber
including an exhaust port; a stage disposed in the chamber, and including
a mounting surface on which the substrate is to be disposed; an injection
portion including at least one injection opening through which a gas is
injected in a direction parallel with a surface of the substrate on which
the thin film is to be formed; and a plasma generator disposed apart from
the substrate to face the substrate.

Claims:

1. A vapor deposition apparatus for forming a thin film on a substrate,
the vapor deposition apparatus comprising: a chamber having an exhaust
port; a stage disposed in the chamber, and including a mounting surface
configured for the substrate to be mounted thereon; an injection portion
having at least one injection opening through which a gas is injected in
a direction parallel with a surface of the substrate on which the thin
film is to be formed; and a plasma generator disposed apart from the
substrate to face the substrate.

2. The vapor deposition apparatus of claim 1, wherein the plasma
generator comprises: a supply portion via which a reaction gas is
injected; a first plasma electrode; a second plasma electrode spaced
apart from the first plasma electrode; and an outlet.

3. The vapor deposition apparatus of claim 2, wherein plasma is generated
between the first and second plasma electrodes, and is discharged toward
the substrate via the outlet.

4. The vapor deposition apparatus of claim 1, wherein the plasma
generator comprises a plurality of modules, wherein each of the plurality
of modules comprises; a supply portion via which the reaction gas is
injected; a first plasma electrode; a second plasma electrode spaced
apart from the first plasma electrode; and an outlet.

5. The vapor deposition apparatus of claim 1, wherein the plasma
generator is disposed to be parallel with the substrate.

6. The vapor deposition apparatus of claim 1, wherein the plasma
generator has the same size as the substrate to correspond to the
substrate, or is larger than the substrate.

7. The vapor deposition apparatus of claim 1, further comprising a mask
having apertures for depositing the thin film in a desired pattern on the
substrate, wherein the mask is disposed on the substrate.

8. The vapor deposition apparatus of claim 1, wherein the stage comprises
a plurality of mounting surfaces on which a plurality of substrates are
to be respectively disposed.

9. The vapor deposition apparatus of claim 8, wherein the plurality of
mounting surfaces are positioned to be parallel with one another.

10. The vapor deposition apparatus of claim 8, wherein the plurality of
mounting surfaces are respectively located on a first surface of the
stage and a second surface of the stage that is opposite to the first
surface.

11. The vapor deposition apparatus of claim 8, wherein a plurality of
plasma generators are disposed to correspond to the plurality of
substrates disposed on the plurality of mounting surfaces.

12. The vapor deposition apparatus of claim 1, further comprising a
driver for driving the stage and the plasma generator, and configured to
move the substrate mounted on the stage and the plasma generator within
the chamber.

13. The vapor deposition apparatus of claim 12, wherein the driver is
configured to move the stage and the plasma generator to thereby move the
substrate mounted on the stage in a direction perpendicular to the
surface of the substrate on which the thin film is to be deposited.

14. The vapor deposition apparatus of claim 12, wherein the driver is
configured to make a reciprocating movement.

15. The vapor deposition apparatus of claim 12, wherein the driver is
configured to concurrently move the stage and the plasma generator.

16. The vapor deposition apparatus of claim 12, wherein the driver
comprises: a first driver for moving the stage; and a second driver for
moving the plasma generator.

17. The vapor deposition apparatus of claim 1, wherein the mounting
surface is positioned in parallel with a direction in which a
gravitational force acts.

18. The vapor deposition apparatus of claim 1, wherein the injection
portion is disposed farther from ground than the stage.

19. The vapor deposition apparatus of claim 1, wherein the exhaust port
is connected to a pump.

20. The vapor deposition apparatus of claim 1, wherein the at least one
injection opening of the injection portion is an outlet into which a
source gas is injected.

21. The vapor deposition apparatus of claim 20, wherein the at least one
injection opening of the injection portion is an outlet via which a
reaction gas is supplied to the plasma generator.

22. The vapor deposition apparatus of claim 1, wherein the exhaust port
is disposed closer to the ground than the substrate is disposed to the
ground.

23. The vapor deposition apparatus of claim 1, wherein the injection
portion comprises a plurality of injection holes disposed apart from one
another in a direction perpendicular to the surface of the substrate on
which the thin film is deposited, so that a deposition process may be
performed on the substrate several times.

24. A vapor deposition method of forming a thin film on a substrate, the
vapor deposition method comprising: mounting the substrate on a mounting
surface of a stage disposed in a chamber; injecting a source gas toward a
space between the substrate and a plasma generator disposed to face the
substrate via an injection portion and in a direction parallel with a
surface of the substrate on which the thin film is to be deposited;
performing an exhaust process by using an exhaust port of the chamber;
generating plasma by using the plasma generator to discharge the plasma
toward the substrate; and performing another exhaust process by using the
exhaust port of the chamber.

25. The vapor deposition method of claim 24, wherein the plasma generator
comprises: a supply portion; a first plasma electrode; a second plasma
electrode spaced apart from the first plasma electrode; and an outlet,
wherein a reaction gas is supplied to the plasma generator via the supply
portion, is changed into plasma via the first and second plasma
electrodes, and is then discharged toward the substrate via the outlet of
the plasma generator.

26. The vapor deposition method of claim 24, wherein a reaction gas is
supplied to the plasma generator via the injection portion, is changed
into plasma via the plasma generator, and is then discharged toward the
substrate.

27. The vapor deposition method of claim 26, wherein the injection
portion comprises an injection hole, and the source gas and the reaction
gas are sequentially injected via the injection hole.

28. The vapor deposition method of claim 26, wherein the injection
portion comprises a plurality of injection holes, and the source gas and
the reaction gas are injected via different injection holes.

29. The vapor deposition method of claim 24, wherein the exhaust process
is performed using a pump.

30. The vapor deposition method of claim 24, wherein the mounting of the
substrate comprises disposing a mask on the substrate, wherein the mask
has apertures for depositing the thin film in a desired pattern on the
substrate.

31. The vapor deposition method of claim 24, wherein a deposition process
is performed while the substrate mounted on the stage is being moved
within the chamber in a direction perpendicular to the surface of the
substrate on which the thin film is to be deposited.

32. The vapor deposition method of claim 24, wherein the stage comprises
a plurality of mounting surfaces, wherein, during the mounting of the
substrate on the stage, a plurality of substrates are respectively
mounted on the plurality of mounting surfaces of the stage.

33. The vapor deposition method of claim 32, wherein a plurality of
plasma generators are disposed to correspond to the plurality of
substrates.

34. A method of manufacturing an organic light-emitting display apparatus
in which a thin film is formed on a substrate, and comprising a first
electrode, a second electrode, and an intermediate layer having an
organic emission layer between the first electrode and the second
electrode, the method comprising: mounting the substrate on a mounting
surface of a stage disposed in a chamber; injecting a source gas toward a
space between the substrate and a plasma generator disposed to face the
substrate via an injection portion and in a direction parallel with a
surface of the substrate on which the thin film is to be deposited;
performing an exhaust process by using an exhaust port of the chamber;
generating plasma by using the plasma generator to discharge the plasma
toward the substrate; and performing another exhaust process by using the
exhaust port of the chamber.

35. The method of claim 34, wherein an encapsulating layer is formed on
the second electrode.

36. The method of claim 34, wherein the thin film is formed to comprise
an insulating layer.

37. The method of claim 34, wherein the thin film is formed to comprise a
conductive layer.

Description:

CROSS-REFERENCE TO RELATED PATENT APPLICATION

[0001] This application claims priority to and the benefit of Korean
Patent Application No. 10-2011-0069489, filed on Jul. 13, 2011, in the
Korean Intellectual Property Office, the disclosure of which is
incorporated herein in its entirety by reference.

BACKGROUND

[0002] 1. Field of the Invention

[0003] Aspects of the present invention relate to a vapor deposition
apparatus and method, and a method of manufacturing an organic
light-emitting display apparatus.

[0004] 2. Description of Related Art

[0005] Semiconductor devices, display apparatuses, and other electronic
devices include a plurality of thin films. The plurality of thin films
may be formed according to various methods, one of which is a vapor
deposition method.

[0006] In the vapor deposition method, at least one gas is used to form a
thin film. Examples of the vapor deposition method include chemical vapor
deposition (CVD), atomic layer deposition (ALD), and the like.

[0008] An organic light-emitting display apparatus includes an
intermediate layer, which includes an organic emission layer, between a
first electrode and a second electrode that are arranged opposite to each
other, and further includes at least one thin film. A deposition process
may be used to form the thin film in the organic light-emitting display
apparatus.

[0009] As organic light-emitting display apparatuses are being developed
to be larger and have higher resolution, it is difficult to deposit a
large sized thin film with desired characteristics. Furthermore, there is
a limitation in increasing efficiency for a process of forming such a
thin film.

SUMMARY

[0010] Aspects of the present invention are directed toward a vapor
deposition apparatus and method for efficiently performing a deposition
process and improving characteristics of a deposited thin film, and a
method of manufacturing an organic light-emitting display apparatus.

[0011] According to an embodiment of the present invention, there is
provided a vapor deposition apparatus for forming a thin film on a
substrate, the vapor deposition apparatus including a chamber having an
exhaust port; a stage disposed in the chamber, and including a mounting
surface on which the substrate is to be disposed; an injection portion
having at least one injection opening through which a gas is injected in
a direction parallel with a surface of the substrate on which the thin
film is to be formed; and a plasma generator disposed apart from the
substrate to face the substrate.

[0012] The plasma generator may include a supply portion via which a
reaction gas is injected; a first plasma electrode; a second plasma
electrode spaced apart from the first plasma electrode; and an outlet.

[0013] Plasma may be generated between the first and second plasma
electrodes, and be discharged toward the substrate via the outlet of the
plasma generator.

[0014] The plasma generator may include a plurality of modules. Each of
the plurality of modules may include a supply portion via which the
reaction gas is injected; a first plasma electrode; a second plasma
electrode spaced apart from the first plasma electrode; and an outlet.

[0015] The plasma generator may be disposed to be parallel with the
substrate.

[0016] The plasma generator may have the same size as the substrate to
correspond to the substrate or may be larger than the substrate.

[0017] The vapor deposition apparatus may further include a mask having
apertures for depositing a thin film in a desired pattern on the
substrate. The mask may be disposed on the substrate.

[0018] The stage may include a plurality of mounting surfaces on which a
plurality of substrates are to be respectively disposed.

[0019] The plurality of mounting surfaces may be positioned to be parallel
with one another.

[0020] The plurality of mounting surfaces may be respectively located on a
first surface of the stage and a second surface of the stage that is
opposite to the first surface.

[0021] A plurality of plasma generators may be disposed to correspond to
the plurality of substrates disposed on the plurality of mounting
surfaces.

[0022] The vapor deposition apparatus may further include a driver for
driving the stage and the plasma generator, and configured to move the
substrate mounted on the stage and the plasma generator within the
chamber.

[0023] The driver may move the stage and the plasma generator, to move the
substrate mounted on the stage in a direction perpendicular to the
surface of the substrate on which a thin film is to be deposited.

[0024] The driver makes a reciprocating movement.

[0025] The driver may concurrently or simultaneously move the stage and
the plasma generator.

[0026] The driver may include a first driver for moving the stage; and a
second driver for moving the plasma generator.

[0027] The mounting surface may be positioned in parallel with a direction
in which a gravitational force acts.

[0028] The injection portion may be disposed farther from ground than the
stage.

[0029] The exhaust port may be connected to a pump.

[0030] The at least one injection opening of the injection portion may be
an outlet into which a source gas is injected.

[0031] The at least one injection hole of the injection portion may be an
outlet via which a reaction gas is supplied to the plasma generator.

[0032] The exhaust port may be disposed closer to the ground than the
substrate is disposed to the ground.

[0033] The injection portion may include a plurality of injection holes
disposed apart from one another in a direction perpendicular to the
surface of the substrate on which a thin film is deposited, so that a
deposition process may be performed on the substrate several times.

[0034] According to another embodiment of the present invention, there is
provided a vapor deposition method of forming a thin film on a substrate,
the vapor deposition method including mounting the substrate on a
mounting surface of a stage disposed in a chamber; injecting a source gas
toward a space between the substrate and a plasma generator disposed to
face the substrate via an injection portion and in a direction parallel
with a surface of the substrate on which the thin film is to be
deposited; performing an exhaust process by using an exhaust port of the
chamber; generating plasma by using the plasma generator to discharge the
plasma toward the substrate; and performing another exhaust process by
using the exhaust port of the chamber.

[0035] The plasma generator may include a supply portion; a first plasma
electrode; a second plasma electrode spaced apart from the first plasma
electrode; and an outlet. A reaction gas may be supplied to the plasma
generator via the supply portion, may be changed into plasma via the
first and second plasma electrodes, and may be then discharged toward the
substrate via the outlet of the plasma generator.

[0036] A reaction gas may be supplied to the plasma generator via the
injection portion, be changed into plasma via the plasma generator, and
be then discharged toward the substrate.

[0037] The injection portion may include an injection hole, and the source
gas and the reaction gas may be sequentially injected via the injection
hole.

[0038] The injection portion may include a plurality of injection holes,
and the source gas and the reaction gas may be injected via different
injection holes.

[0039] The exhaust process may be performed using a pump.

[0040] The mounting of the substrate may include disposing a mask on the
substrate, wherein the mask has apertures for depositing a thin film in a
desired pattern on the substrate.

[0041] A deposition process may be performed while the substrate mounted
on the stage is being moved within the chamber in a direction
perpendicular to the surface of the substrate on which the thin film is
to be deposited.

[0042] The stage may include a plurality of mounting surfaces. During the
mounting of the substrate on the stage, a plurality of substrates may be
respectively mounted on the plurality of mounting surfaces of the stage.

[0043] A plurality of plasma generators may be disposed to correspond to
the plurality of substrates.

[0044] According to another embodiment of the present invention, there is
provided a method of manufacturing an organic light-emitting display
apparatus in which a thin film at least including a first electrode, an
intermediate layer having an organic emission layer, and a second
electrode is formed on a substrate, wherein the forming of the thin film
includes mounting the substrate on a mounting surface of a stage disposed
in a chamber; injecting a source gas toward a space between the substrate
and a plasma generator disposed to face the substrate via an injection
portion and in a direction parallel with a surface of the substrate on
which the thin film is to be deposited; performing an exhaust process by
using an exhaust port of the chamber; generating plasma by using the
plasma generator to discharge the plasma toward the substrate; and
performing another exhaust process by using the exhaust port of the
chamber.

[0045] The forming of the thin film may include forming an encapsulating
layer on the second electrode.

[0046] The forming of the thin film may include forming an insulating
layer.

[0047] The forming of the thin film may include forming a conductive
layer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0048] The above and other features and aspects of the present invention
will become more apparent by describing in detail exemplary embodiments
thereof with reference to the attached drawings in which:

[0049] FIG. 1 is a schematic cross-section view of a vapor deposition
apparatus according to an embodiment of the present invention;

[0050]FIG. 2 is a schematic perspective view of a plasma generator of
FIG. 1, according to an embodiment of the present invention;

[0051]FIG. 3 is a cross-sectional view taken along a line III-III of FIG.
2;

[0052] FIG. 4 is a schematic cross-section view of a vapor deposition
apparatus according to another embodiment of the present invention;

[0053]FIG. 5 is a plan view of the vapor deposition apparatus of FIG. 4,
viewed in a direction indicated by an arrow A;

[0054]FIG. 6 is a schematic cross-section view of a vapor deposition
apparatus according to another embodiment of the present invention.

[0055]FIG. 7 is a schematic cross-sectional view of a vapor deposition
apparatus 400 according to another embodiment of the present invention.

[0056] FIG. 8 is a schematic cross-section view of a vapor deposition
apparatus according to another embodiment of the present invention.

[0057] FIG. 9 is a schematic cross-section view of a vapor deposition
apparatus according to another embodiment of the present invention.

[0058] FIG. 10 is a schematic cross-section view of a vapor deposition
apparatus according to another embodiment of the present invention.

[0059] FIG. 11 is a schematic cross-sectional view of a vapor deposition
apparatus according to another embodiment of the present invention; and

[0060]FIG. 12 is a schematic cross-sectional view of an organic
light-emitting display apparatus manufactured based a method of
manufacturing an organic light-emitting display apparatus according to an
embodiment of the present invention.

DETAILED DESCRIPTION

[0061] Hereinafter, exemplary embodiments of the present invention will be
described more fully with reference to the accompanying drawings.

[0062] FIG. 1 is a schematic cross-section view of a vapor deposition
apparatus 100 according to an embodiment of the present invention.
Referring to FIG. 1, the vapor deposition apparatus 100 includes a
chamber 110, a stage 120, an injection portion 130, and a plasma
generator 180.

[0063] The chamber 110 includes an exhaust port (e.g., an opening, a hole,
etc.) 111 on a bottom thereof. The exhaust port 111 is an outlet via
which a gas is exhausted, and may be connected to a pump (not shown) to
help exhaust the gas.

[0064] Although not shown, the pump is used to control pressure applied to
the chamber 110 so that the pressure is maintained constant. A heating
unit (not shown) may be disposed inside or outside the chamber 110 to
heat the inside of the chamber 110, thereby enhancing the efficiency of a
deposition process.

[0065] The stage 120 is disposed in the chamber 110. The stage 120
includes a mounting surface 121. The mounting surface 121 is positioned
in parallel with a direction in which a gravitational force acts. That
is, the mounting surface 121 is perpendicular to the ground. To this end,
the stage 120 is disposed perpendicularly to the ground.

[0066] A substrate 101 is disposed on the stage 120. Specifically, the
substrate 101 is mounted on the mounting surface 121 of the stage 120.

[0067] A fixing unit (not shown) may be used to fix the mounted substrate
101 onto the mounting surface 121. Any of various members, e.g., a clamp,
a pressurizing member, and an adhesive material, may be used as the
fixing unit.

[0068] The plasma generator 180 is disposed to face the substrate 101.
Specifically, the substrate 101 and the plasma generator 180 are disposed
apart from each other to form a space therebetween. The plasma generator
180 may be disposed in parallel with the substrate 101. Also, the plasma
generator 180 may have the same size as the substrate 101 to correspond
to the substrate 101 or may be larger than the substrate 101.

[0069] The shape of the plasma generator 180 is not limited to the one as
shown. In other words, the plasma generator 180 may have any of various
shapes, provided that the plasma generator 180 can receive a reaction
gas, generate plasma from the reaction gas, and discharge the plasma
toward the substrate 101.

[0070] The plasma generator 180 according to one embodiment is
specifically illustrated in FIG. 3. Referring to FIG. 3, the plasma
generator 180 includes a plurality of modules 180a, 180b, 180c, 180d, and
180e. The module 180a includes a first plasma electrode 181, a second
plasma electrode 182, a supply portion 183, and an outlet 185. The other
modules 180b, 180c, 180d, and 180e are the same as the module 180a and
will not be described again here. FIG. 3 illustrates that the plurality
of modules 180a, 180b, 180c, 180d, and 180e are disposed apart from one
another, but aspects of the present invention are not limited thereto and
the plurality of modules 180a, 180b, 180c, 180d, and 180e may be
integrated together in one unit.

[0071] When a reaction gas is injected through the plasma generator 180
via the supply portion 183, plasma is generated in a space 184 between
the first and second plasma electrodes 181 and 182 and is then discharged
toward the substrate 101 via the outlet 185.

[0072] The injection portion 130 is connected to the chamber 110. At least
one gas is injected toward the substrate 101 via the injection portion
130. Specifically, the injection portion 130 includes a first injection
hole (or opening) 131 and a second injection hole 132. A gas is injected
through the first and second injection holes 131 and 132 in a direction
parallel with a planar surface of the substrate 101. In other words, a
gas is injected through the first and second injection holes 131 and 132
in a direction parallel with a direction in which a gravitational force
acts.

[0073] In detail, a source gas S is injected through the first injection
hole 131. The second injection hole 132 may not need to be formed since a
reaction gas that is in a plasma state is injected via the plasma
generator 180. However, aspects of the present invention are not limited
thereto, and the reaction gas may be injected through the second
injection hole 132 rather than the supply portion 183 of the plasma
generator 180. That is, the reaction gas may be injected through the
second injection hole 132, be changed to the form of plasma within the
plasma generator 180, and then be injected toward the substrate 101.
Alternatively, if the second injection hole 132 is not formed, then the
source gas S may be injected through the first injection hole 131, a
suitable process (e.g., a predetermined process) may be performed using
the source gas S, and then, the reaction gas may be injected through the
first injection hole 131.

[0074] Shapes of the first and second injection holes 131 and 132 are not
limited.

[0075] For example, the first and second injection holes 131 and 132 may
each be in the form of a dot or a line corresponding to a width of the
first substrate 101.

[0076] An operation of the vapor deposition apparatus 100 according to the
current embodiment is briefly described below.

[0077] The substrate 101 is mounted on the mounting surface 121 of the
stage 120. Then, a source gas S is injected through the first injection
hole 131 of the injection portion 130. In this case, the source gas S may
be injected toward the space between the substrate 101 and the plasma
generator 180. While the source gas S is being injected, the plasma
generator 180 is controlled not to operate.

[0079] The source gas S is adsorbed onto the substrate 101. Then, an
exhaust process is performed using the exhaust port 111 to form either a
single atomic layer or multiple atomic layers of the source gas S on the
substrate 101. That is, a single layer or multiple layers of the aluminum
(Al) atoms are formed.

[0080] Then, a reaction gas is injected through the supply portion 183 of
the plasma generator 180. Then, plasma is generated in the space 184
between the first and second plasma electrodes 181 and 182. The plasma is
discharged toward the substrate 101 via the outlet 185.

[0081] Specifically, the reaction gas may contain oxygen (O) atoms. The
plasma of the reaction gas is adsorbed onto an upper surface (e.g., a
surface opposite to the surface facing the stage 120) of the substrate
101. Then, the exhaust process is performed using the exhaust port 111 to
form either a single atomic layer or multiple atomic layers of the
reaction gas on the substrate 101. In other words, a single layer or
multiple layers of oxygen atoms are formed.

[0082] Accordingly, a single layer or multiple atomic layers of the source
gas S and the reaction gas are formed on the substrate 101. In other
words, an aluminum oxide layer AlxOy is formed, wherein x and y may be
adjusted according to process conditions. In the current embodiment, a
process of forming the aluminum oxide layer AlxOy is described for
convenience of explanation, but aspects of the present invention are not
limited thereto. That is, the present invention may be applied to a
process of forming any of other various layers, e.g., an insulating layer
and a conductive layer.

[0083] In the current embodiment, the source gas S is injected through the
injection portion 130 in a direction parallel with the upper surface of
the substrate 101. In particular, the substrate 101 is disposed
perpendicularly to the ground, i.e., in a direction in which a
gravitational force acts. Since the source gas S is supplied via the
injection portion 130, it is possible to reduce an unnecessarily adsorbed
amount on the substrate 101 when the source gas S is adsorbed onto the
substrate 101. Similarly, it is possible to reduce an amount of the
plasma generated by the plasma generator 180 that ends up being
unnecessarily adsorbed onto the substrate 101.

[0084] In other words, an amount of surplus components adsorbed onto the
substrate 101 or an uneven lump of the components drop downward due to
gravity, thereby reducing the amounts of the surplus source gas S and the
surplus plasma.

[0085] Such surplus components may be easily removed by performing the
exhaust process using the exhaust port 111 below the substrate 101 (e.g.,
the exhaust port 111 is disposed closer to the ground than the substrate
101 is disposed to the ground). Thus, the source gas S is injected
through the first injection hole 131 of the injection portion 130, the
exhaust process is performed without performing a purging process using
an additional purge gas, the reaction gas is injected through the plasma
generator 180, and the exhaust process is performed again without
performing the purging process, thereby completing the deposition
process.

[0086] In particular, in the current embodiment, the plasma generator 180
is disposed to face the substrate 101. The plasma generator 180 is
disposed separately from the injection portion 130 via which the source
gas S is injected. Thus, the process using the source gas S and the
process using the reaction gas may be performed individually
(independently), thereby easily forming a thin film that does not contain
impurities.

[0087] Also, since the plasma generator 180 and the substrate 101 are
disposed apart from each other and the source gas S is injected through
the space therebetween via the injection portion 130, the plasma
generator 180 may be used as a guide member to block undesired
impurities. To this end, the plasma generator 180 may be formed to have
the same size as or to be larger than the substrate 101.

[0088] Accordingly, the efficiency of the deposition process of forming a
desired thin film may be greatly increased. Furthermore, since undesired
components may be easily prevented or blocked from being adsorbed onto
the substrate 101 and the purging process is not used, purge gas
impurities generated when a purge gas is used may be eliminated from
being deposited together with a desired thin film on the substrate 101.
Therefore, it is possible to form a thin film having uniform
characteristics that are physically and chemically improved.

[0089] FIG. 4 is a schematic cross-section view of a vapor deposition
apparatus 200 according to another embodiment of the present invention.
FIG. 5 is a plan view of the vapor deposition apparatus 200 of FIG. 4,
viewed in a direction indicated by an arrow A.

[0090] Referring to FIGS. 4 and 5, the vapor deposition apparatus 200
includes a chamber 210, a stage 220, an injection portion 230, a mask
240, and a plasma generator 280.

[0091] The chamber 210 includes an exhaust port 211 on a bottom thereof.
The exhaust port 211 is an outlet via which a gas is exhausted, and may
be connected to a pump (not shown) to help exhaust the gas.

[0092] Although not shown, the pump is used to control pressure applied to
the chamber 210 so that the pressure is maintained constant. A heating
unit (not shown) may be disposed inside or outside the chamber 210 to
heat the inside of the chamber 210, thereby enhancing the efficiency of
the deposition process.

[0093] The stage 220 is disposed in the chamber 210. The stage 220
includes a mounting surface 221. The mounting surface 221 is located to
be parallel with a direction in which a gravitational force acts. That
is, the mounting surface 221 is perpendicular to the ground. To this end,
the stage 220 is disposed perpendicularly to the ground.

[0094] A substrate 201 is disposed on the stage 220. Specifically, the
substrate 201 is mounted on the mounting surface 221 of the stage 220.

[0095] A fixing unit (not shown) may be used to fix the mounted substrate
201 onto the mounting surface 221. Any of various members, e.g., a clamp,
a pressurizing member, and an adhesive material, may be used as the
fixing unit.

[0096] The plasma generator 280 is disposed to face the substrate 201.
Specifically, the substrate 201 and the plasma generator 280 are disposed
apart from each other to form a space therebetween. The plasma generator
280 may be disposed in parallel with the substrate 201. Also, the plasma
generator 280 may have the same size as the substrate 201 to correspond
to the substrate 201 or may be larger than the substrate 201.

[0097] The mask 240 is disposed on the substrate 201. Referring to FIG. 5,
the mask 240 includes a plurality of apertures 240a each having a
suitable shape (e.g., a predetermined shape). Each of the plurality of
apertures 240a has a shape corresponding to a respective one of patterns
of a thin film to be formed on the substrate 201.

[0098]FIG. 5 illustrates a total of six apertures 240a, but aspects of
the present invention are not limited thereto. The total number and
shapes of the apertures 240a are determined based on the total number and
shapes of patterns to be formed on the substrate 201. For example, the
mask 240 may be an open type mask with one aperture 240a.

[0099] The shape of the plasma generator 280 is not limited to the one as
shown. In other words, the plasma generator 280 may have any of various
shapes, provided the plasma generator 280 can receive a reaction gas,
generate plasma from the reaction gas, and discharge the plasma toward
the substrate 201. For example, the plasma generator 280 may have the
same structure as the plasma generator 180 of FIG. 3.

[0100] The injection portion 230 is connected to the chamber 210. At least
one gas is injected toward the substrate 201 via the injection portion
230. Specifically, the injection portion 230 includes a first injection
hole 231 and a second injection hole 232. A gas is injected through the
first and second injection holes 231 and 232 in a direction parallel with
a planar surface of the substrate 201. In other words, a gas is injected
through the first and second injection holes 231 and 232 in a direction
parallel with a direction in which a gravitational force acts.

[0101] In detail, a source gas S is injected through the first injection
hole 231. The second injection hole 232 may not need to be formed since a
reaction gas that is in a plasma state is injected via the plasma
generator 280. However, aspects of the present invention are not limited
thereto, and the reaction gas may be injected through the second
injection hole 232 rather than a supply portion (not shown) of the plasma
generator 280. That is, the reaction gas may be injected through the
second injection hole 232, be changed to the form of plasma within the
plasma generator 280, and then be injected toward the substrate 201.

[0102] Shapes of the first and second injection holes 231 and 232 are not
limited. For example, the first and second injection holes 231 and 232
may each be in the form of a dot or a line corresponding to a width of
the first substrate 201.

[0103] An operation of the vapor deposition apparatus 200 according to the
current embodiment is briefly described below.

[0104] The substrate 201 is mounted on the mounting surface 221 of the
stage 220. The mask 240 with the apertures 240a corresponding to the
patterns of the thin film that is to be formed on the substrate 201, is
disposed on the substrate 201.

[0105] Then, a source gas S is injected through the first injection hole
231 of the injection portion 230. In this case, the source gas S may be
injected toward the space between the substrate 201 and the plasma
generator 280. While the source gas S is being injected, the plasma
generator 280 is controlled not to operate.

[0106] The source gas S is adsorbed onto the substrate 201. In particular,
the source gas S is adsorbed onto regions on an upper surface of the
substrate 201, which correspond to the apertures 240a. Then, an exhaust
process is performed using the exhaust port 211 to form either a single
atomic layer or multiple atomic layers of the source gas S on the regions
on the substrate 201 corresponding to the apertures 240a.

[0107] Then, a reaction gas is injected through the supply portion of the
plasma generator 280. When the reaction gas is injected, plasma is
generated in the space between the first plasma electrode and the second
plasma electrode. The plasma is discharged toward the substrate 201 via
the outlet of the plasma generator 280.

[0108] The plasma of the reaction gas is adsorbed onto the regions on the
substrate 201 corresponding to the apertures 240a. Then, the exhaust
process is performed using the exhaust port 211 to form either a single
atomic layer or multiple atomic layers of the reaction gas on the
substrate 201.

[0109] Accordingly, a single layer or multiple atomic layers of the source
gas S and the reaction gas are formed on the substrate 201.

[0110] In the current embodiment, the source gas S is injected through the
injection portion 230 in a direction parallel with the upper surface of
the substrate 201. In particular, the substrate 201 is disposed
perpendicularly to the ground, i.e., in a direction in which a
gravitational force acts. Since the source gas S is supplied via the
injection portion 230, it is possible to reduce an unnecessarily adsorbed
amount on the substrate 201 when the source gas S is adsorbed onto the
substrate 201. Similarly, it is possible to reduce an amount of the
plasma generated by the plasma generator 280 that ends up being
unnecessarily adsorbed onto the substrate 201.

[0111] In other words, an amount of surplus components adsorbed onto the
substrate 201 or an uneven lump of the components drop downward due to
gravity, thereby reducing the amounts of the surplus source gas S and the
surplus plasma. Such surplus components may be easily removed by
performing the exhaust process using the exhaust port 211 below the
substrate 201. Thus, the source gas S is injected through the first
injection hole 231 of the injection portion 230, the exhaust process is
performed without performing a purging process using an additional purge
gas, the reaction gas is injected through the plasma generator 280, and
the exhaust process is performed again without performing the purging
process, thereby completing the deposition process.

[0112] In particular, in the current embodiment, the plasma generator 280
is disposed to face the substrate 201. The plasma generator 280 is
disposed separately from the injection portion 230 via which the source
gas S is injected. Thus, the process using the source gas S and the
process using the reaction gas may be performed individually, thereby
easily forming a thin film that does not contain impurities.

[0113] Also, since the plasma generator 280 and the substrate 201 are
disposed apart from each other and the source gas S is injected through
the space therebetween via the injection portion 230, the plasma
generator 280 may be used as a guide member to block undesired
impurities. To this end, the plasma generator 280 may be formed to have
the same size as or to be larger than the substrate 201.

[0114] Also, in the current embodiment, the mask 240 is disposed on the
substrate 201 to help form the patterns of a thin film on the substrate
201.

[0115] Accordingly, the efficiency of the deposition process of forming a
desired thin film may be greatly increased. Furthermore, since undesired
components may be easily prevented or blocked from being adsorbed onto
the substrate 201 and the purging process is not used, purge gas
impurities generated when a purge gas is used may be eliminated from
being deposited together with a desired thin film on the substrate 201.
Therefore, it is possible to form a thin film having uniform
characteristics that are physically and chemically improved.

[0116]FIG. 6 is a schematic cross-section view of a vapor deposition
apparatus 300 according to another embodiment of the present invention.
Referring to FIG. 6, the vapor deposition apparatus 300 includes a
chamber 310, a stage 320, an injection portion 330, a first plasma
generator 381, and a second plasma generator 382.

[0117] The chamber 310 includes an exhaust port 311 on a bottom thereof.
The exhaust port 311 is an outlet via which a gas is exhausted, and may
be connected to a pump (not shown) to help exhaust the gas.

[0118] Although not shown, the pump is used to control pressure applied to
the chamber 310 so that the pressure is maintained constant. A heating
unit (not shown) may be disposed inside or outside the chamber 310 to
heat the inside of the chamber 310, thereby enhancing the efficiency of a
deposition process.

[0119] The stage 320 includes a first mounting surface 321 and a second
mounting surface 322. The first and second mounting surfaces 321 and 322
are located to be parallel with a direction in which a gravitational
force acts. In other words, the first and second mounting surfaces 321
and 322 are located perpendicularly to the ground. To this end, the stage
320 is disposed perpendicularly to the ground.

[0120] A first substrate 301 and a second substrate 302 are disposed on
the stage 320. Specifically, the first substrate 301 and the second
substrate 302 are respectively mounted on the first mounting surface 321
and the second mounting surface 322 of the stage 320.

[0121] The first and second mounting surfaces 321 and 322 are located to
be parallel with each other.

[0122] A fixing unit (not shown) may be used to respectively fix the
mounted first and second substrates 301 and 302 onto the first and second
mounting surfaces 321 and 322. Any of various members, e.g., a clamp, a
pressurizing member, and an adhesive material, may be used as the fixing
unit.

[0123] The first and second plasma generators 381 and 382 are disposed to
face the first and second substrates 301 and 302. Specifically, the first
and second plasma generators 381 and 382 are respectively disposed to
face the first and second substrates 301 and 302.

[0124] The first substrate 301 and the first plasma generator 381 are
disposed apart from each other to form a space therebetween, and the
second substrate 302 and the second plasma generator 382 are disposed
apart from each other to form a space therebetween. The first and second
plasma generators 381 and 382 may be disposed in parallel with the first
and second substrates 301 and 302, respectively. Also, the first plasma
generator 381 may have the same size as the first substrate 301 to
correspond to the first substrate 301 or may be larger than the first
substrate 301, and the second plasma generator 382 may have the same size
as the second substrate 302 to correspond to the second substrate 301 or
may be larger than the second substrate 302. Shapes of the first and
second plasma generators 381 and 382 are not limited. In other words, the
first and second plasma generators 381 and 382 may have any of various
shapes, provided they can receive a reaction gas, generate plasma from
the reaction gas, and respectively discharge the plasma toward the first
and second substrates 301 and 302. The first and second plasma generators
381 and 382 are as described above in the previous embodiments and are
thus not described in detail here.

[0125] The injection portion 330 is connected to the chamber 310. At least
one gas is injected toward the substrate 301 via the injection portion
330. Specifically, the injection portion 330 includes a first injection
hole 331 and a second injection hole 332. A gas is injected through the
first and second injection holes 331 and 332 in a direction parallel with
planar surfaces of the first and second substrates 301 and 302. In other
words, a gas is injected through the first and second injection holes 331
and 332 in a direction parallel with a direction in which a gravitational
force acts.

[0126] In detail, a source gas S is injected through the first injection
hole 331. The second injection hole 332 may not need to be formed since a
reaction gas that is in a plasma state is injected via the first and
second plasma generators 381 and 382. However, aspects of the present
invention are not limited thereto, and the reaction gas may be injected
through the second injection hole 332 rather than supply portions (not
shown) of the first and second plasma generators 381 and 382.

[0127] Shapes of the first and second injection holes 331 and 332 are not
limited. For example, the first and second injection holes 331 and 332
may each be in the form of a dot or a line corresponding to a width of
the first substrate 301.

[0128] An operation of the vapor deposition apparatus 300 according to the
current embodiment is briefly described below.

[0129] The first and second substrates 301 and 302 are respectively
mounted on the first and second mounting surfaces 321 and 322 of the
stage 320. Then, a source gas S is injected through the first injection
hole 333 of the injection portion 330. In this case, the source gas S may
be injected toward the space between the first substrate 301 and the
first plasma generator 381, and the space between the second substrate
302 and the second plasma generator 382. While the source gas S is being
injected, the first and second plasma generators 381 and 382 are
controlled not to operate.

[0130] The source gas S is adsorbed onto upper surfaces of the first and
second substrates 301 and 302. Then, an exhaust process is performed
using the exhaust port 311 to form either a single atomic layer or
multiple atomic layers of the source gas S on the first and second
substrates 301 and 302.

[0131] Then, a reaction gas is injected through the supply portions of the
first and second plasma generators 381 and 382. When the reaction gas is
injected, plasma is generated in the space between the first plasma
electrode and the second plasma electrode. The plasma is discharged
toward the first and second substrates 301 and 302 via the outlets of the
plasma generators 381 and 382.

[0132] Thus, the plasma of the reaction gas is adsorbed onto the first and
second substrates 301 and 302. Then, the exhaust process is performed
using the exhaust port 311 to form either a single atomic layer or
multiple atomic layers of the reaction gas on the first and second
substrates 301 and 302.

[0133] Accordingly, a single atomic layer or multiple atomic layers of the
source gas S and the reaction gas are formed on the first and second
substrates 301 and 302.

[0134] In the current embodiment, the source gas S is injected through the
injection portion 330 in a direction parallel with the upper surfaces of
the first and second substrates 301 and 302. In particular, the first and
second substrates 301 and 302 are disposed perpendicularly to the ground,
i.e., in a direction in which a gravitational force acts. Thus, when the
source gas S is supplied via the injection portion 330 to be adsorbed
onto the first and second substrates 301 and 302, it is possible to
reduce an unnecessarily adsorbed amount on the first and second
substrates 301 and 302 when the source gas S is adsorbed onto the first
and second substrates 301 and 302. Similarly, it is possible to reduce an
amount of the plasma generated by the first and second plasma generators
381 and 382 that ends up being unnecessarily adsorbed onto the first and
second substrates 301 and 302.

[0135] In other words, an amount of surplus components adsorbed onto the
first and second substrates 301 and 302 or an uneven lump of the
components drop downward due to gravity, thereby reducing the amounts of
the surplus source gas S and the surplus plasma. Such surplus components
may also be easily removed by performing the exhaust process using the
exhaust port 311 below the first and second substrates 301 and 302. Thus,
the source gas S is injected through the first injection hole 331 of the
injection portion 330, the exhaust process is performed without
performing a purging process using an additional purge gas, the reaction
gas is injected through the first and second plasma generators 381 and
382, and the exhaust process is performed again without performing the
purging process, thereby completing the deposition process.

[0136] In particular, in the current embodiment, the first and second
plasma generators 381 and 382 are disposed to face the first and second
substrates 301 and 302, respectively. The first and second plasma
generators 381 and 382 are disposed separately from the injection portion
330 via which the source gas S is injected. Thus, the process using the
source gas S and the process using the reaction gas may be performed
individually, thereby easily forming a thin film that does not contain
impurities.

[0137] Also, the first and second plasma generators 381 and 382 are
disposed apart from the first and second substrate 301 and 302 and the
source gas S is injected through the spaces between the first plasma
generator 381 and the first substrate 301, and between the second plasma
generator 382 and the second substrate 301 via the injection portion 330.
Thus, the first and second plasma generators 381 and 382 may be used as
guide members to block undesired impurities. To this end, the first and
second plasma generators 381 and 382 may be formed to have the same size
as or to be larger than the first and second substrates 301 and 302.

[0138] Accordingly, the efficiency of the deposition process of forming a
desired thin film may be greatly increased. Furthermore, since undesired
components may be easily prevented or blocked from being adsorbed onto
the first and second substrates 301 and 302 and the purging process is
not used, purge gas impurities generated when a purge gas is used may be
eliminated from being deposited together with thin films on the first and
second substrates 301 and 302. Therefore, it is possible to form a thin
film having uniform characteristics that are physically and chemically
improved.

[0139] Also, in the current embodiment, the first and second mounting
surfaces 321 and 322 are respectively formed on both surfaces of the
stage 320, and the first and second substrates 301 and 302 are
concurrently or simultaneously mounted on the stage 320. Accordingly, the
efficiency of the deposition process may be enhanced. Furthermore, since
the first and second substrates 301 and 302 are respectively disposed on
both surfaces of the stage 320 to be parallel with each other, surfaces
of the first and second substrates 301 and 302 on which a thin film is to
be formed are not disposed to face each other. Thus, a deposition process
performed on the first substrate 301 and a deposition process performed
on the second substrate 302 are not influenced by each other.
Accordingly, it is possible to form a thin film having uniform and
improved characteristics on both the first and second substrates 301 and
302.

[0140]FIG. 7 is a schematic cross-sectional view of a vapor deposition
apparatus 400 according to another embodiment of the present invention.
Referring to FIG. 7, the vapor deposition apparatus 400 includes a
chamber 410, a stage 420, an injection portion 430, a first mask 441, a
second mask 442, a first plasma generator 481, and a second plasma
generator 482.

[0141] The chamber 410 includes an exhaust port 411 on a bottom thereof.
The exhaust port 411 is an outlet via which a gas is exhausted, and may
be connected to a pump (not shown) to help exhaust the gas.

[0142] Although not shown, the pump is used to control pressure applied to
the chamber 410 so that the pressure is maintained constant. A heating
unit (not shown) may be disposed inside or outside the chamber 410 to
heat the inside of the chamber 410, thereby enhancing the efficiency of a
deposition process.

[0143] The stage 420 includes a first mounting surface 421 and a second
mounting surface 422. The first and second mounting surfaces 421 and 422
are located to be parallel with a direction in which a gravitational
force acts. In other words, the first and second mounting surfaces 421
and 422 are located perpendicularly to the ground. To this end, the stage
420 is disposed perpendicularly to the ground.

[0144] A first substrate 401 and a second substrate 402 are disposed on
the stage 420. Specifically, the first substrate 401 and the second stage
402 are respectively mounted on the first mounting surface 421 and the
second mounting surface 422 of the stage 420.

[0145] The first and second mounting surfaces 421 and 422 are located to
be parallel with each other.

[0146] A fixing unit (not shown) may be used to respectively fix the
mounted first and second substrates 401 and 402 onto the first and second
mounting surfaces 421 and 422. Any of various members, e.g., a clamp, a
pressurizing member, and an adhesive material, may be used as the fixing
unit.

[0147] The first and second masks 441 and 442 are disposed on the first
and second substrates 401 and 402. Specifically, the first and second
masks 441 and 442 may be respectively disposed on the first and second
substrates 401 and 402.

[0148] Although not shown, each of the first and second masks 441 and 442
includes apertures as in the previous embodiments. Each of the apertures
has a shape corresponding to a respective one of patterns of a thin film
to be formed on each of the first and second substrates 401 and 402.

[0149] The first and second plasma generators 481 and 482 are disposed to
face the first and second substrates 401 and 402. Specifically, the first
and second plasma generators 481 and 482 are respectively disposed to
face the first and second substrates 401 and 402, respectively.

[0150] The first substrate 401 and the first plasma generator 481 are
disposed apart from each other to form a space therebetween, and the
second substrate 402 and the second plasma generator 482 are disposed
apart from each other to form a space therebetween. The first and second
plasma generators 481 and 482 may be disposed in parallel with the first
and second substrates 401 and 402, respectively. Also, the first plasma
generator 481 may have the same size as the first substrate 401 to
correspond to the first substrate 401 or may be larger than the first
substrate 401, and the second plasma generator 482 may have the same size
as the second substrate 402 to correspond to the second substrate 402 or
may be larger than the second substrate 402.

[0151] The shapes of the first and second plasma generators 481 and 482
are not limited. In other words, the first and second plasma generators
481 and 482 may have any of various shapes, provided they can receive a
reaction gas, generate plasma from the reaction gas, and respectively
discharge the plasma toward the first and second substrates 401 and 402.
The first and second plasma generators 481 and 482 are as described above
in the previous embodiments and are thus not described in detail here.

[0152] The injection portion 430 is connected to the chamber 410. At least
one gas is injected toward the substrate 401 via the injection portion
430. Specifically, the injection portion 430 includes a first injection
hole 431 and a second injection hole 432. A gas is injected through the
first and second injection holes 431 and 432 in a direction parallel with
a planar surface of the substrate 401. In other words, a gas is injected
through the first and second injection holes 431 and 432 in a direction
parallel with a direction in which a gravitational force acts.

[0153] In detail, a source gas S is injected through the first injection
hole 431. The second injection hole 432 may not need to be formed since a
reaction gas that is in a plasma state is injected via the first and
second plasma generators 481 and 482. However, aspects of the present
invention are not limited thereto, and the reaction gas may be injected
through the second injection hole 432 rather than supply portions (not
shown) of the first and second plasma generators 481 and 482.

[0154] Shapes of the first and second injection holes 431 and 432 are not
limited. For example, the first and second injection holes 431 and 432
may each be in the form of a dot or a line corresponding to a width of
the first substrate 401.

[0155] An operation of the vapor deposition apparatus 400 according to the
current embodiment is briefly described below.

[0156] The first and second substrates 401 and 402 are respectively
mounted on the first and second mounting surfaces 421 and 422 of the
stage 420. The first mask 441 including apertures (not shown)
corresponding to patterns of a thin film that is to be deposited on the
first substrate 401, is disposed on the first substrate 402. The second
mask 442 including apertures (not shown) corresponding to patterns of a
thin film that is to be deposited on the second substrate 402, is
disposed on the second substrate 402.

[0157] Then, a source gas S is injected through the first injection hole
431 of the injection portion 430. In this case, the source gas S may be
injected toward the space between the first substrate 401 and the first
plasma generator 481, and the space between the second substrate 402 and
the second plasma generator 482. While the source gas S is being
injected, the first and second plasma generators 481 and 482 are
controlled not to operate.

[0158] The source gas S is adsorbed onto upper surfaces of the first and
second substrates 401 and 402. In particular, the source gas S is
adsorbed onto regions on the first and second substrates 401 and 402,
which correspond to the apertures. Then, an exhaust process is performed
using the exhaust port 411 to form either a single atomic layer or
multiple atomic layers of the source gas S on the regions of the first
and second substrates 401 and 402 which correspond to the apertures.

[0159] Then, a reaction gas is injected through the supply portions of the
first and second plasma generators 481 and 482. When the reaction gas is
injected, plasma is generated in the space between the first plasma
electrode and the second plasma electrode. The plasma is discharged
toward the first and second substrates 401 and 402 via the outlets of the
plasma generators 481 and 482.

[0160] The plasma of the reaction gas is adsorbed onto the regions on the
first and second substrates 401 and 402 corresponding to the apertures.
Then, the exhaust process is performed using the exhaust port 411 to form
either a single atomic layer or multiple atomic layers of the reaction
gas on the first and second substrates 401 and 402.

[0161] Accordingly, a single atomic layer or multiple atomic layers of the
source gas S and the reaction gas are formed on the first and second
substrates 401 and 402.

[0162] In the current embodiment, the source gas S is injected through the
injection portion 430 in a direction parallel with the upper surfaces of
the first and second substrates 401 and 402. In particular, the first and
second substrates 401 and 402 are disposed perpendicularly to the ground,
i.e., in a direction in which a gravitational force acts. Thus, when the
source gas S is supplied via the injection portion 430 to be adsorbed
onto the first and second substrates 401 and 402, it is possible to
reduce an unnecessarily adsorbed amount on the first and second
substrates 401 and 402 when the source gas S is adsorbed onto the first
and second substrates 401 and 402. Similarly, it is possible to reduce an
amount of the plasma generated by the first and second plasma generators
481 and 482 that ends up being unnecessarily adsorbed onto the first and
second substrates 401 and 402.

[0163] In other words, an amount of surplus components adsorbed onto the
first and second substrates 401 and 402 or an uneven lump of the
components drop downward due to gravity, thereby reducing the amounts of
the surplus source gas S and the surplus plasma. Such surplus components
may also be easily removed by performing the exhaust process using the
exhaust port 411 below the first and second substrates 401 and 402. Thus,
the source gas S is injected through the first injection hole 431 of the
injection portion 430, the exhaust process is performed without
performing a purging process using an additional purge gas, the reaction
gas is injected through the first and second plasma generators 481 and
482, and the exhaust process is performed again without performing the
purging process, thereby completing the deposition process.

[0164] In particular, in the current embodiment, the first and second
plasma generators 481 and 482 are disposed to face the first and second
substrates 401 and 402, respectively. The first and second plasma
generators 481 and 482 are disposed separately from the injection portion
430 via which the source gas S is injected. Thus, the process using the
source gas S and the process using the reaction gas may be performed
individually, thereby easily forming a thin film that does not contain
impurities.

[0165] Also, the first and second plasma generators 481 and 482 are
disposed apart from the first and second substrate 401 and 402, and the
source gas S is injected through the spaces between the first plasma
generator 481 and the first substrate 801 and between the second plasma
generator 482 and the second substrate 402 via the injection portion 430.
Thus, the first and second plasma generators 481 and 482 may be used as
guide members to block undesired impurities. To this end, the first and
second plasma generators 481 and 482 may be formed to have the same size
as or to be larger than the first and second substrates 401 and 402.

[0166] Also, in the current embodiment, the first and second masks 441 and
442 are disposed on the first and second substrates 401 and 402 to help
form the patterns of thin films on the first and second substrates 401
and 402.

[0167] Accordingly, the efficiency of the deposition process of forming a
desired thin film may be greatly increased. Furthermore, since undesired
components may be easily prevented or blocked from being adsorbed onto
the first and second substrates 401 and 402 and the purging process is
not used, purge gas impurities generated when a purge gas is used may be
eliminated from being deposited together with thin films on the first and
second substrates 401 and 402. Therefore, it is possible to form a
desired thin film having uniform characteristics that are physically and
chemically improved.

[0168] Also, in the current embodiment, the first and second mounting
surfaces 421 and 422 are respectively formed on both surfaces of the
stage 420, and the first and second substrates 401 and 402 are
concurrently or simultaneously mounted on the stage 420. Accordingly, the
efficiency of the deposition process may be enhanced. Furthermore, since
the first and second substrates 401 and 402 are disposed on both surfaces
of the stage 420 to be parallel with each other, surfaces of the first
and second substrates 401 and 402 on which a thin film is to be formed
are not disposed to face each other. Thus, a deposition process performed
on the first substrate 401 and a deposition process performed on the
second substrate 402 are not influenced by each other. Accordingly, it is
possible to form a thin film having uniform and improved characteristics
on both the first and second substrates 401 and 402.

[0169] FIG. 8 is a schematic cross-section view of a vapor deposition
apparatus 500 according to another embodiment of the present invention.
Referring to FIG. 8, the vapor deposition apparatus 500 includes a
chamber 510, a stage 520, an injection portion 530, a first driver 551, a
second driver 552, and a plasma generator 580.

[0170] The chamber 510 includes an exhaust port 511 on a bottom thereof.
The exhaust port 511 is an outlet via which a gas is exhausted, and may
be connected to a pump (not shown) to help exhaust the gas.

[0171] Although not shown, the pump is used to control pressure applied to
the chamber 510 so that the pressure is maintained constant. A heating
unit (not shown) may be disposed inside or outside the chamber 510 to
heat the inside of the chamber 510, thereby enhancing the efficiency of a
deposition process.

[0172] The stage 520 is disposed in the chamber 510. The stage 520
includes a mounting surface 521. The mounting surface 521 is located to
be parallel with a direction in which a gravitational force acts. That
is, the mounting surface 521 is perpendicular to the ground. To this end,
the stage 520 is disposed perpendicularly to the ground.

[0173] A substrate 501 is disposed on the stage 520. Specifically, the
substrate 501 is mounted on the mounting surface 521 of the stage 520.

[0174] A fixing unit (not shown) may be used to fix the mounted substrate
501 onto the mounting surface 521. Any of various members, e.g., a clamp,
a pressurizing member, and an adhesive material, may be used as the
fixing unit.

[0175] The plasma generator 580 is disposed to face the substrate 501.
Specifically, the substrate 501 and the plasma generator 580 are disposed
apart from each other to form a space therebetween. The plasma generator
580 may be disposed in parallel with the substrate 501. Also, the plasma
generator 580 may have the same size as the substrate 501 to correspond
to the substrate 501 or may be larger than the substrate 501.

[0176] The shape of the plasma generator 580 is not limited. In other
words, the plasma generator 580 may have any of various shapes, provided
that the plasma generator 580 can receive a reaction gas, generate plasma
from the reaction gas, and discharge the plasma toward the substrate 501.
The structure of the plasma generator 580 is the same as in the previous
embodiments and is thus not described in detail here.

[0177] The first and second drivers 551 and 552 are connected to the stage
520 and the plasma generator 580. Specifically, the first driver 551 is
connected to the stage 520, and the second driver 552 is connected to the
plasma generator 580. FIG. 8 illustrates two separate drivers, i.e., the
first and second drivers 551 and 552, but aspects of the present
invention are not limited thereto. In other words, one driver may be used
to concurrently or simultaneously move the stage 520 and the plasma
generator 580.

[0178] Referring to FIG. 8, the first driver 551 moves the stage 520 in a
direction indicated by an arrow M or a direction opposite to that
direction. In other words, the first driver 551 moves the stage 520 in
the X-axis direction. Thus, the substrate 501 may be moved in a direction
perpendicular to a surface of the substrate 501 on which a thin film is
to be formed.

[0179] The second driver 552 moves the plasma generator 580 in the
direction indicated by the arrow M or the direction opposite to that
direction. In other words, the second driver 552 moves the plasma
generator 580 in the X-axis direction. Thus, the plasma generator 580 may
be moved in the direction perpendicular to the surface of the substrate
501 on which a thin film is to be formed.

[0180] In this case, the first and second drivers 551 and 552 are
controlled to maintain a space between the substrate 501 and the plasma
generator 580 constant.

[0181] The injection portion 530 is connected to the chamber 510. At least
one gas is injected toward the substrate 501 via the injection portion
530. Specifically, the injection portion 530 includes a first injection
hole 531, a second injection hole 532, a third injection hole 533, a
fourth injection hole 534, a fifth injection hole 535, and a sixth
injection hole 536.

[0182] The first to sixth injection holes 531 to 536 are arranged in a
direction in which the substrate 501 is moved. In other words, the first
to sixth injection holes 531 to 536 are disposed apart from one another
in the X-axis direction.

[0183] Shapes of the first to sixth injection holes 531 to 536 are not
limited. For example, they may each be in the form of a dot or a line
corresponding to a width of the substrate 501.

[0184] Specifically, a gas is injected through the first to sixth
injection holes 531 to 536 in a direction parallel with a planar surface
of the substrate 501. In other words, a gas is injected through the first
to sixth injection holes 531 to 536 in a direction parallel with a
direction in which a gravitational force acts.

[0185] Specifically, a source gas S is sequentially or concurrently or
simultaneously injected through the first, third, and fifth injection
holes 531, 533, and 535. The second, fourth, and sixth injection holes
532, 534, and 536 may not need to be formed since a reaction gas that is
in a plasma state is injected via the plasma generator 580. However,
aspects of the present invention are not limited thereto, and the
reaction gas may be injected through the second, fourth, and sixth
injection holes 532, 534, and 536 rather than a supply portion (not
shown) of the plasma generator 580. That is, the reaction gas may be
injected through the second, fourth, and sixth injection holes 532, 534,
and 536, be changed to the form of plasma within the plasma generator
580, and then be injected toward the substrate 501.

[0186] An operation of the vapor deposition apparatus 500 according to the
current embodiment is briefly described below.

[0187] The substrate 501 is mounted on the mounting surface 521 of the
stage 520. Then, a source gas S is injected through the first injection
hole 531 of the injection portion 530. In this case, the source gas S may
be injected toward the space between the substrate 501 and the plasma
generator 580. While the source gas S is being injected, the plasma
generator 580 is controlled not to operate.

[0188] The source gas S is adsorbed onto the substrate 501. Then, an
exhaust process is performed using the exhaust port 511 to form either a
single atomic layer or multiple atomic layers of the source gas S on the
substrate 501.

[0189] Then, a reaction gas is injected through the supply portion of the
plasma generator 580. When the reaction gas is injected, plasma is
generated in the space between the first plasma electrode and the second
plasma electrode. The plasma is discharged toward the substrate 501 via
the outlet of the plasma generator 580.

[0190] Thus, the plasma of the reaction gas is adsorbed onto the substrate
501. Then, the exhaust process is performed using the exhaust port 511 to
form either a single atomic layer or multiple atomic layers of the
reaction gas on the substrate 501.

[0191] Accordingly, a single layer or multiple atomic layers of the source
gas S and the reaction gas are formed on the substrate 501.

[0192] Then, the stage 520 and the plasma generator 580 are moved using
the first and second drivers 551 and 552 in the X-axis direction, i.e.,
the direction indicated by the arrow M. Accordingly, the space between
the substrate 501 and the plasma generator 580 is maintained constant,
even after the substrate 601 and the plasma generator 680 are moved.

[0193] Then, a source gas S is injected through the third injection hole
533 of the injection portion 530. In this case, the source gas S may be
injected toward the space between the substrate 501 and the plasma
generator 580. While the source gas S is being injected, the plasma
generator 580 is controlled not to operate.

[0194] The source gas S is adsorbed onto the substrate 501. Then, an
exhaust process is performed using the exhaust port 511 to form either a
single atomic layer or multiple atomic layers of the source gas S on the
substrate 501.

[0195] Then, a reaction gas is injected through the supply portion of the
plasma generator 580. When the reaction gas is injected, plasma is
generated in the space between the first plasma electrode and the second
plasma electrode. The plasma is discharged toward the substrate 501 via
the outlet of the plasma generator 580.

[0196] Thus, the plasma of the reaction gas is adsorbed onto the substrate
501. Then, the exhaust process is performed using the exhaust port 511 to
form either a single atomic layer or multiple atomic layers of the
reaction gas on the substrate 501.

[0197] Accordingly, the single atomic layer of or multiple atomic layers
of the source gas S and the reaction gas are further formed on the thin
film, i.e., the single atomic layer or multiple atomic layers of the
source gas S and the reaction gas, which was formed on the substrate 501
by using the first injection hole 531 and the plasma generator 580 before
the first and second drivers 551 and 552 were driven.

[0198] Then, the stage 520 and the plasma generator 580 are moved in the
X-axis direction, i.e., the direction indicated by the arrow M, by using
the first and second drivers 551 and 552.

[0199] Then, a thin film is additionally formed on the substrate 501 by
using the fifth injection hole 535 and the plasma generator 580 in the
same manner in which the previous thin film was formed using the first
injection hole 531 and the plasma generator 580.

[0200] Accordingly, it is possible to form a thin film to a desired
thickness on the substrate 501 in the chamber 510. In other words, moving
of the stage 520 and the plasma generator 580 may be controlled according
to the desired thickness of the thin film.

[0201] In the current embodiment, the source gas S is injected through the
injection portion 530 in a direction parallel with the upper surface of
the substrate 501. In particular, the substrate 501 is disposed
perpendicularly to the ground, i.e., in a direction in which a
gravitational force acts. Since the source gas S is supplied via the
injection portion 530, it is possible to reduce an unnecessarily adsorbed
amount on the substrate 501 when the source gas S is adsorbed onto the
substrate 501. Similarly, it is possible to reduce an amount of the
plasma generated by the plasma generator 580 that ends up being
unnecessarily adsorbed onto the substrate 501.

[0202] In other words, an amount of surplus components adsorbed onto the
substrate 501 or an uneven lump of the components drop downward due to
gravity, thereby reducing the amounts of the surplus source gas S and the
surplus plasma. Such surplus components may be easily removed by
performing the exhaust process using the exhaust port 511 below the
substrate 501. Thus, the source gas S is injected through the first
injection hole 531 of the injection portion 530, the exhaust process is
performed without performing a purging process using an additional purge
gas, the reaction gas is injected through the plasma generator 580, and
the exhaust process is performed again without performing the purging
process, thereby completing the deposition process.

[0203] In particular, in the current embodiment, the plasma generator 580
is disposed to face the substrate 501. The plasma generator 580 is
disposed separately from the injection portion 530 via which the source
gas S is injected. Thus, the process using the source gas S and the
process using the reaction gas may be performed individually, thereby
easily forming a thin film that does not contain impurities.

[0204] Also, since the plasma generator 580 and the substrate 501 are
disposed apart from each other and the source gas S is injected through
the space therebetween via the injection portion 530, the plasma
generator 580 may be used as a guide member to block undesired
impurities. To this end, the plasma generator 580 may be formed to have
the same size as or to be larger than the substrate 501. For example,
when the source gas S is injected through the third injection hole 533, a
surplus impurity gas generated and adsorbed onto the substrate 501 when
the source gas S injected through the first injection hole 531 reacts
with the substrate 501 may not be completely exhausted via the exhaust
port 511. In this case, a process using the source gas S injected via the
third injection hole 533 may be influenced by the surplus impurity gas,
thereby degrading the characteristics of a thin film to be formed on the
substrate 501. However, according to the current embodiment, the source
gas S is injected toward the space between the substrate 501 and the
plasma generator 580 via the third injection hole 533. Thus, the plasma
generator 580 may prevent or block the source gas S from being mixed with
such a surplus impurity gas.

[0205] Accordingly, the efficiency of the deposition process of forming a
desired thin film may be greatly increased. Furthermore, since undesired
components may be easily prevented or blocked from being adsorbed onto
the first and second substrates 501 and 502 and the purging process is
not used, purge gas impurities generated when a purge gas is used may be
eliminated from being deposited together with a desired thin film on the
first and second substrates 501 and 502. Therefore, it is possible to
form a thin film having uniform characteristics that are physically and
chemically improved.

[0206] Also, in the current embodiment, a deposition process is performed
while the stage 520 and the plasma generator 580 are being moved using
the first and second drivers 551 and 552. Also, a plurality of deposition
processes are sequentially performed using the first injection hole 531,
the third injection hole 533, the fifth injection hole 535, and the
plasma generator 580. Thus, it is possible to greatly reduce an amount of
time required to form a thin film to a desired thickness, thereby
increasing the efficiency of the deposition process.

[0207] FIG. 9 is a schematic cross-section view of a vapor deposition
apparatus 600 according to another embodiment of the present invention.
Referring to FIG. 9, the vapor deposition apparatus 600 includes a
chamber 610, a stage 620, an injection portion 630, a mask 640, a first
driver 651, a second driver 652, and a plasma generator 680.

[0208] The chamber 610 includes an exhaust port 611 on a bottom thereof.
The exhaust port 611 is an outlet via which a gas is exhausted, and may
be connected to a pump (not shown) to help exhaust the gas.

[0209] Although not shown, the pump is used to control pressure applied to
the chamber 610 so that the pressure is maintained constant. A heating
unit (not shown) may be disposed inside or outside the chamber 610 to
heat the inside of the chamber 610, thereby enhancing the efficiency of a
deposition process.

[0210] The stage 620 is disposed in the chamber 610. The stage 620
includes a mounting surface 621. The mounting surface 621 is located to
be parallel with a direction in which a gravitational force acts. That
is, the mounting surface 621 is perpendicular to the ground. To this end,
the stage 620 is disposed perpendicularly to the ground.

[0211] A substrate 601 is disposed on the stage 620. Specifically, the
substrate 601 is mounted on the mounting surface 621 of the stage 620.

[0212] A fixing unit (not shown) may be used to fix the mounted substrate
601 onto the mounting surface 621. Any of various members, e.g., a clamp,
a pressurizing member, and an adhesive material, may be used as the
fixing unit.

[0213] The mask 640 is disposed on the substrate 601. The mask 640
includes apertures (not shown) formed in a suitable pattern (e.g., a
predetermined pattern). Each of the apertures has a shape corresponding
to a respective one of patterns of a thin film to be formed on the
substrate 601.

[0214] The plasma generator 680 is disposed to face the substrate 601.
Specifically, the substrate 601 and the plasma generator 680 are disposed
apart from each other to form a space therebetween. The plasma generator
680 may be disposed in parallel with the substrate 601. Also, the plasma
generator 680 may have the same size as the substrate 601 to correspond
to the substrate 601 or may be larger than the substrate 601.

[0215] A shape of the plasma generator 680 is not limited. In other words,
the plasma generator 680 may have any of various shapes, provided the
plasma generator 680 can receive a reaction gas, generate plasma from the
reaction gas, and discharge the plasma toward the substrate 601. The
structure of the plasma generator 680 is the same as in the previous
embodiments and is thus not described in detail here.

[0216] The first and second drivers 651 and 652 are connected to the stage
620 and the plasma generator 680. Specifically, the first driver 651 is
connected to the stage 620, and the second driver 652 is connected to the
plasma generator 680. FIG. 9 illustrates two separate drivers, i.e., the
first and second drivers 651 and 652, but aspects of the present
invention are not limited thereto. In other words, one driver may be used
to concurrently or simultaneously move the stage 620 and the plasma
generator 680.

[0217] Referring to FIG. 9, the first driver 651 moves the stage 620 in a
direction indicated by an arrow M or a direction opposite to that
direction. In other words, the first driver 651 moves the stage 620 in
the X-axis direction. Thus, the substrate 601 may be moved in a direction
perpendicular to a surface of the substrate 601 on which a thin film is
to be formed.

[0218] The second driver 652 moves the plasma generator 680 in the
direction indicated by the arrow M or the direction opposite to that
direction. In other words, the second driver 652 moves the plasma
generator 680 in the X-axis direction. Thus, the plasma generator 680 may
be moved in the direction perpendicular to the surface of the substrate
601 on which a thin film is to be formed.

[0219] In this case, the first and second drivers 651 and 652 are
controlled to maintain a space between the substrate 601 and the plasma
generator 680 constant.

[0220] The injection portion 630 is connected to the chamber 610. At least
one gas is injected toward the substrate 601 via the injection portion
630. Specifically, the injection portion 630 includes a first injection
hole 631, a second injection hole 632, a third injection hole 633, a
fourth injection hole 634, a fifth injection hole 635, and a sixth
injection hole 636.

[0221] The first to sixth injection holes 631 to 636 are arranged in a
direction in which the substrate 601 is moved. In other words, the first
to sixth injection holes 631 to 636 are disposed apart from one another
in the X-axis direction.

[0222] Shapes of the first to sixth injection holes 631 to 632 are not
limited. For example, they may each be in the form of a dot or a line
corresponding to a width of the substrate 601.

[0223] Specifically, a gas is injected through the first to sixth
injection holes 631 to 636 in a direction parallel with a planar surface
of the substrate 601. In other words, a gas is injected through the first
to sixth injection holes 631 to 636 in a direction parallel with a
direction in which a gravitational force acts.

[0224] Specifically, a source gas S is sequentially or concurrently or
simultaneously injected through the first, third, and fifth injection
holes 631, 633, and 635. The second, fourth, and sixth injection holes
632, 634, and 636 may not need to be formed since a reaction gas that is
in a plasma state is injected via the plasma generator 680. However,
aspects of the present invention are not limited thereto, and the
reaction gas may be injected through the second, fourth, and sixth
injection holes 632, 634, and 636 rather than a supply portion (not
shown) of the plasma generator 680. That is, the reaction gas may be
injected through the second, fourth, and sixth injection holes 632, 634,
and 636, be changed to the form of plasma within the plasma generator
680, and then be injected toward the substrate 601.

[0225] An operation of the vapor deposition apparatus 600 according to the
current embodiment is briefly described below.

[0226] The substrate 601 is mounted on the mounting surface 621 of the
stage 620. The mask 640 with apertures corresponding to patterns of a
thin film that is to be formed on the substrate 601, is disposed on the
substrate 601.

[0227] Then, a source gas S is injected through the first injection hole
631 of the injection portion 630. In this case, the source gas S may be
injected toward the space between the substrate 601 and the plasma
generator 680. While the source gas S is being injected, the plasma
generator 680 is controlled not to operate.

[0228] The source gas S is adsorbed onto the substrate 601. In particular,
the source gas S is adsorbed onto regions on the substrate 601 that
correspond to the apertures. Then, an exhaust process is performed using
the exhaust port 611 to form either a single atomic layer or multiple
atomic layers of the source gas S on the substrate 601.

[0229] Then, a reaction gas is injected through the supply portion of the
plasma generator 680. When the reaction gas is injected, plasma is
generated in the space between the first plasma electrode and the second
plasma electrode. The plasma is discharged toward the substrate 601 via
the outlet of the plasma generator 680.

[0230] The plasma of the reaction gas is adsorbed onto the regions on the
substrate 601 corresponding to the apertures. Then, the exhaust process
is performed using the exhaust port 611 to form either a single atomic
layer or multiple atomic layers of the reaction gas on the substrate 601.

[0231] Accordingly, a single layer or multiple atomic layers of the source
gas S and the reaction gas are formed on the substrate 601.

[0232] Then, the stage 620 and the plasma generator 680 are moved in the
X-axis direction, i.e., the direction indicated by the arrow M, by using
the first and second drivers 651 and 652. Accordingly, the space between
the substrate 601 and the plasma generator 680 is maintained constant
even after the substrate 601 and the plasma generator 680 are moved.

[0233] Then, a source gas S is injected through the third injection hole
633 of the injection portion 630. In this case, the source gas S may be
injected toward the space between the substrate 601 and the plasma
generator 680. While the source gas S is being injected, the plasma
generator 680 is controlled not to operate.

[0234] The source gas S is adsorbed onto the substrate 601. Then, an
exhaust process is performed using the exhaust port 611 to form either a
single atomic layer or multiple atomic layers of the source gas S on the
substrate 601.

[0235] Then, a reaction gas is injected through the supply portion of the
plasma generator 680. When the reaction gas is injected, plasma is
generated in the space between the first plasma electrode and the second
plasma electrode. The plasma is discharged toward the substrate 601 via
the outlet of the plasma generator 680.

[0236] Thus, the plasma of the reaction gas is adsorbed onto the substrate
601. Then, the exhaust process is performed using the exhaust port 611 to
form either a single atomic layer or multiple atomic layers of the
reaction gas on the substrate 601.

[0237] Accordingly, a single atomic layer or multiple atomic layers of the
source gas S and the reaction gas are formed on the thin film, i.e., the
single atomic layer of or multiple atomic layers of the source gas S and
the reaction gas, which was formed on the substrate 601 by using the
first injection hole 631 and the plasma generator 680 before the first
and second drivers 651 and 652 were driven.

[0238] Then, the stage 620 and the plasma generator 680 are moved in the
X-axis direction, i.e., the direction indicated by the arrow M, by using
the first and second drivers 651 and 652.

[0239] Then, a thin film is additionally formed on the substrate 601 by
using the fifth injection hole 635 and the plasma generator 680 in the
same manner in which the previous thin film was formed using the first
injection hole 631 and the plasma generator 680.

[0240] Accordingly, it is possible to form a thin film to a desired
thickness on the substrate 601 in the chamber 610. In other words, moving
of the stage 620 and the plasma generator 680 may be controlled according
to the desired thickness of the thin film.

[0241] In the current embodiment, the source gas S is injected through the
injection portion 630 in a direction parallel with the upper surface of
the substrate 601. In particular, the substrate 601 is disposed
perpendicularly to the ground, i.e., in a direction in which a
gravitational force acts. Since the source gas S is supplied via the
injection portion 630, it is possible to reduce an unnecessarily adsorbed
amount on the substrate 601 when the source gas S is adsorbed onto the
substrate 601. Similarly, it is possible to reduce an amount of the
plasma generated by the plasma generator 680 that ends up being
unnecessarily adsorbed onto the substrate 601.

[0242] In other words, an amount of surplus components adsorbed onto the
substrate 601 or an uneven lump of the components drop downward due to
gravity, thereby reducing the amounts of the surplus source gas S and the
surplus plasma. Such surplus components may be easily removed by
performing the exhaust process using the exhaust port 611 below the
substrate 601. Thus, the source gas S is injected through the first
injection hole 631 of the injection portion 630, the exhaust process is
performed without performing a purging process using an additional purge
gas, the reaction gas is injected through the plasma generator 680, and
the exhaust process is performed again without performing the purging
process, thereby completing the deposition process.

[0243] In particular, in the current embodiment, the plasma generator 680
is disposed to face the substrate 601. The plasma generator 680 is
disposed separately from the injection portion 630 via which the source
gas S is injected. Thus, the process using the source gas S and the
process using the reaction gas may be performed individually, thereby
easily forming a thin film that does not contain impurities.

[0244] Also, since the plasma generator 680 and the substrate 601 are
disposed apart from each other and the source gas S is injected through
the space therebetween via the injection portion 630, the plasma
generator 680 may be used as a guide member to block undesired
impurities. To this end, the plasma generator 680 may be formed to have
the same size as or to be larger than the substrate 601. For example,
when the source gas S is injected through the third injection hole 633, a
surplus impurity gas generated and adsorbed onto the substrate 601 when
the source gas S injected through the first injection hole 631 reacts
with the substrate 601 may not be completely exhausted via the exhaust
port 611. In this case, a process using the source gas S injected via the
third injection hole 633 may be influenced by the surplus impurity gas,
thereby degrading the characteristics of a thin film to be formed on the
substrate 601. However, according to the current embodiment, the source
gas S is injected toward the space between the substrate 601 and the
plasma generator 680 via the third injection hole 633. Thus, the plasma
generator 680 may prevent the source gas S from being mixed with such a
surplus impurity gas.

[0245] Accordingly, the efficiency of the deposition process of forming a
desired thin film may be greatly increased. Furthermore, since undesired
components may be easily prevented or blocked from being adsorbed onto
the first and second substrates 801 and 802 and the purging process is
not used, purge gas impurities generated when a purge gas is used may be
eliminated from being deposited together with a desired thin film on the
first and second substrates 601 and 602. Therefore, it is possible to
form a thin film having uniform characteristics that are physically and
chemically improved.

[0246] Also, in the current embodiment, a deposition process is performed
while the stage 620 and the plasma generator 680 are being moved using
the first and second drivers 651 and 652. Also, a plurality of deposition
processes are sequentially performed using the first injection hole 631,
the third injection hole 633, the fifth injection hole 635, and the
plasma generator 680. Thus, it is possible to greatly reduce an amount of
time required to form a thin film to a desired thickness, thereby
increasing the efficiency of the deposition process.

[0247] Also, in the current embodiment, the mask 640 is disposed on the
substrate 601 to help form the patterns of a thin film on the substrate
601.

[0248] FIG. 10 is a schematic cross-section view of a vapor deposition
apparatus 700 according to another embodiment of the present invention.
Referring to FIG. 10, the vapor deposition apparatus 700 includes a
chamber 710, a stage 720, an injection portion 730, a first driver 751, a
second driver 752, a third driver 753, a first plasma generator 781, and
a second plasma generator 782.

[0249] The chamber 710 includes an exhaust port 711 on a bottom thereof.
The exhaust port 711 is an outlet via which a gas is exhausted, and may
be connected to a pump (not shown) to help exhaust the gas.

[0250] Although not shown, the pump is used to control pressure applied to
the chamber 710 so that the pressure is maintained constant. A heating
unit (not shown) may be disposed inside or outside the chamber 710 to
heat the inside of the chamber 710, thereby enhancing the efficiency of a
deposition process.

[0251] The stage 720 includes a first mounting surface 721 and a second
mounting surface 722. The first and second mounting surfaces 721 and 722
are located to be parallel with a direction in which a gravitational
force acts. In other words, the first and second mounting surfaces 721
and 722 are located perpendicularly to the ground. To this end, the stage
720 is disposed perpendicularly to the ground.

[0252] A first substrate 701 and a second substrate 702 are disposed on
the stage 720. Specifically, the first substrate 701 and the second stage
702 are respectively mounted on the first and second mounting surfaces
721 and 722 of the stage 720.

[0253] The first and second mounting surfaces 721 and 722 are located to
be parallel with each other.

[0254] A fixing unit (not shown) may be used to respectively fix the
mounted first and second substrates 701 and 702 onto the first and second
mounting surfaces 721 and 722. Any of various members, e.g., a clamp, a
pressurizing member, and an adhesive material, may be used as the fixing
unit.

[0255] The first substrate 701 and the first plasma generator 781 are
disposed apart from each other to form a space therebetween, and the
second substrate 702 and the second plasma generator 782 are disposed
apart from each other to form a space therebetween. The first and second
plasma generators 781 and 782 may be disposed in parallel with the first
and second substrates 701 and 702, respectively. Also, the first plasma
generator 781 may have the same size as the first substrate 701 to
correspond to the first substrate 701 or may be larger than the first
substrate 701. The second plasma generator 782 may have the same size as
the second substrate 702 to correspond to the second substrate 702 or may
be larger than the second substrate 702.

[0256] Shapes of the first and second plasma generators 781 and 782 are
not limited. In other words, the first and second plasma generators 781
and 782 may have any of various shapes, provided they can receive a
reaction gas, generate plasma from the reaction gas, and respectively
discharge the plasma toward the first and second substrates 701 and 702.
The first and second plasma generators 781 and 782 are as described above
in the previous embodiments and are thus not described in detail here.

[0257] The first to third drivers 751 to 753 are respectively connected to
the stage 720 and the first and second plasma generators 781 and 782.
Specifically, the first driver 751 is connected to the stage 720, the
second driver 752 is connected to the first plasma generator 781, and the
third driver 753 is connected to the second plasma generator 782.

[0258] FIG. 10 illustrates three separate drivers, i.e., the first to
third drivers 751 to 753, but aspects of the present invention are not
limited thereto. In other words, one driver may be used to concurrently
or simultaneously move the stage 720 and the first and second plasma
generators 781 and 782.

[0259] Referring to FIG. 10, the first driver 751 moves the stage 720 in a
direction indicated by an arrow M or a direction opposite to that
direction. In other words, the first driver 751 moves the stage 720 in
the X-axis direction. Thus, the first and second substrates 701 and 702
may be moved in a direction perpendicular to surfaces of the first and
second substrates 701 and 702 on which a thin film is to be formed.

[0260] The second and third drivers 752 and 753 respectively move the
first and second plasma generators 781 and 782 in the direction indicated
by the arrow M or the direction opposite to that direction. In other
words, the second and third drivers 752 and 853 respectively move the
first and second plasma generators 781 and 782 in the X-axis direction.
Thus, the first and second plasma generators 781 and 782 may be
respectively moved in the directions perpendicular to the surfaces of the
first and second substrates 701 and 702 on which a thin film is to be
formed.

[0261] In this case, the first to third drivers 751 to 753 are controlled
to maintain spaces between the first substrate 701 and the first plasma
generator 781, and between the second substrate 702 and the second plasma
generator 782, to be constant.

[0262] The injection portion 730 is connected to the chamber 710. At least
one gas is injected toward the first and second substrates 701 and 702
via the injection portion 730. Specifically, the injection portion 730
includes a first injection hole 731, a second injection hole 732, a third
injection hole 733, a fourth injection hole 734, a fifth injection hole
735, and a sixth injection hole 736.

[0263] The first to sixth injection holes 731 to 736 are arranged in a
direction in which the first and second substrates 701 and 702 are moved.
In other words, the first to sixth injection holes 731 to 736 are
disposed apart from one another in the X-axis direction.

[0264] Shapes of the first to sixth injection holes 731 to 736 are not
limited. For example, they may each be in the form of a dot or a line
corresponding to a width of each of the first and second substrates 701
and 702.

[0265] Specifically, a gas is injected through the first to sixth
injection holes 731 to 736 in a direction parallel with planar surfaces
of the first and second substrates 701 and 702. In other words, a gas is
injected through the first to sixth injection holes 731 to 736 in a
direction parallel with a direction in which a gravitational force acts.

[0266] A source gas S is sequentially or concurrently or simultaneously
injected through the first, third, and fifth injection holes 731, 733,
and 735. The second, fourth, and sixth injection holes 732, 734, and 736
may not need to be formed since a reaction gas that is in a plasma state
is injected via the first and second plasma generators 781 and 782.
However, aspects of the present invention are not limited thereto, and
the reaction gas may be injected through the second, fourth, and sixth
injection holes 732, 734, and 736 rather than supply portions (not shown)
of the first and second plasma generators 781 and 782. That is, the
reaction gas may be injected through the second, fourth, and sixth
injection holes 732, 734, and 736, be changed to the form of plasma
within the first and second plasma generators 781 and 782, and then be
injected toward the first and second substrates 701 and 702.

[0267] An operation of the vapor deposition apparatus 700 according to the
current embodiment is briefly described below.

[0268] The first and second substrates 701 and 702 are mounted on the
mounting surface 720 of the stage 720. Then, a source gas S is injected
through the first injection hole 731 of the injection portion 730. In
this case, the source gas S may be injected toward the spaces between the
first substrate 701 and the first plasma generator 781 and between the
second substrate 702 and the second plasma generator 782. While the
source gas S is being injected, the first and second plasma generators
781 and 782 are controlled not to operate.

[0269] The source gas S is adsorbed onto the first and second substrates
701 and 702. Then, the exhaust process is performed using the exhaust
port 711 to form either a single atomic layer or multiple atomic layers
of the source gas S on the first and second substrates 701 and 702.

[0270] Then, a reaction gas is injected through the supply portions of the
first and second plasma generators 781 and 782. When the reaction gas is
injected, plasma is generated in the space between the first plasma
electrode and the second plasma electrode. The plasma is discharged
toward the first and second substrates 701 and 702 via the outlets of the
plasma generators 781 and 782.

[0271] Thus, the plasma of the reaction gas is adsorbed onto the first and
second substrates 701 and 702. Then, the exhaust process is performed
using the exhaust port 711 to form either a single atomic layer or
multiple atomic layers of the reaction gas on the first and second
substrates 701 and 702.

[0272] Accordingly, a single atomic layer or multiple atomic layers of the
source gas S and the reaction gas are formed on the first and second
substrates 701 and 702.

[0273] Then, the stage 720 and the first and second plasma generators 781
and 782 are moved using the first to third drivers 751 to 753 in the
X-axis direction, i.e., the direction indicated by the arrow M.
Accordingly, the spaces between the first substrate 701 and the first
plasma generator 781, and between the second substrate 702 and the second
plasma generator 782 are maintained constant even after the stage 720 and
the first and second plasma generators 781 and 782 are moved.

[0274] Then, a source gas S is injected through the third injection hole
733 of the injection portion 731. In this case, the source gas S may be
injected toward the spaces between the first substrate 701 and the first
plasma generator 781, and between the second substrate 702 and the second
plasma generator 782. While the source gas S is being injected, the first
and second plasma generators 781 and 782 are controlled not to operate.

[0275] The source gas S is adsorbed onto the first and second substrates
701 and 702. Then, the exhaust process is performed using the exhaust
port 711 to form either a single atomic layer or multiple atomic layers
of the source gas S on the first and second substrates 701 and 702.

[0276] Then, a reaction gas is injected through the supply portions of the
first and second plasma generators 781 and 782. When the reaction gas is
injected, plasma is generated in the space between the first plasma
electrode and the second plasma electrode. The plasma is discharged
toward the first and second substrates 701 and 702 via the outlets of the
plasma generators 781 and 782.

[0277] Thus, the plasma of the reaction gas is adsorbed onto the first and
second substrates 701 and 702. Then, the exhaust process is performed
using the exhaust port 711 to form either a single atomic layer or
multiple atomic layers of the reaction gas on the first and second
substrates 701 and 702.

[0278] Accordingly, a single atomic layer or multiple atomic layers of the
source gas S and the reaction gas are formed on the thin film, i.e., the
single atomic layer or multiple atomic layers of the source gas S and the
reaction gas, which was formed on the first and second substrates 701 and
702 by using the first injection hole 731 and the first and second plasma
generators 781 and 782 before the first and second drivers 751 and 752
were driven.

[0279] Then, the stage 720 and the first and second plasma generators 781
and 782 are moved in the X-axis direction, i.e., the direction indicated
by the arrow M, by using the first and second drivers 751 and 752.

[0280] Then, a thin film is additionally formed on the first and second
substrates 701 and 702 by using the fifth injection hole 735 and the
first and second plasma generators 781 and 782 in the same manner in
which the previous thin film was formed using the first injection hole
731 and the first and second plasma generators 781 and 782.

[0281] Accordingly, it is possible to form a thin film to a desired
thickness on the first and second substrates 701 and 702 in the chamber
710. In other words, moving of the stage 720 and the first and second
plasma generators 781 and 782 may be controlled according to the desired
thickness of the thin film.

[0282] In the current embodiment, the source gas S is injected through the
injection portion 730 in a direction parallel with the upper surfaces of
the first and second substrates 701 and 702. In particular, the first and
second substrates 701 and 702 are disposed perpendicularly to the ground,
i.e., in a direction in which a gravitational force acts. Thus, when the
source gas S is supplied via the injection portion 730 to be adsorbed
onto the first and second substrates 701 and 702, it is possible to
reduce an unnecessarily adsorbed amount on the first and second
substrates 701 and 702 when the source gas S is adsorbed onto the first
and second substrates 701 and 702. Similarly, it is possible to reduce an
amount of the plasma generated by the first and second plasma generators
781 and 782 that ends up being unnecessarily adsorbed onto the first and
second substrates 701 and 702.

[0283] In other words, an amount of surplus components adsorbed onto the
first and second substrates 701 and 702 or an uneven lump of the
components drop downward due to gravity, thereby reducing the amounts of
the surplus source gas S and the surplus plasma. Such surplus components
may also be easily removed by performing the exhaust process using the
exhaust port 711 below the first and second substrates 701 and 702. Thus,
the source gas S is injected through the first injection hole 731 of the
injection portion 730, the exhaust process is performed without
performing a purging process using an additional purge gas, the reaction
gas is injected through the first and second plasma generators 781 and
782, and the exhaust process is performed again without performing the
purging process, thereby completing the deposition process.

[0284] In particular, in the current embodiment, the first and second
plasma generators 781 and 782 are disposed to face the first and second
substrates 701 and 702, respectively. The first and second plasma
generators 781 and 782 are disposed separately from the injection portion
730 via which the source gas S is injected. Thus, the process using the
source gas S and the process using the reaction gas may be performed
individually, thereby easily forming a thin film that does not contain
impurities.

[0285] Also, the first and second plasma generators 781 and 782 are
disposed apart from the first and second substrate 701 and 702, and the
source gas S is injected through the spaces between the first plasma
generator 781 and the first substrate 801, and between the second plasma
generator 782 and the second substrate 702 via the injection portion 730.
Thus, the first and second plasma generators 781 and 782 may be used as
guide members to block undesired impurities. To this end, the first and
second plasma generators 781 and 782 may be formed to have the same size
as or to be larger than the first and second substrate 701 and 702. For
example, when the source gas S is injected through the third injection
hole 733, a surplus impurity gas generated and adsorbed onto the first
and second substrates 701 and 702 when the source gas S injected through
the first injection hole 731 reacts with the first and second substrate
701 and 702, may not be completely exhausted via the exhaust port 711. In
this case, the process using the source gas S injected via the third
injection hole 733 may be influenced by the surplus impurity gas, thereby
degrading the characteristics of a thin film to be formed on the first
and second substrates 701 and 702. However, according to the current
embodiment, the source gas S is injected toward the spaces between the
first substrate 701 and the first plasma generator 781, and between the
second substrate 702 and the second plasma generators 782 via the third
injection hole 733. Thus, the first and second plasma generators 781 and
782 may prevent or block the source gas S from being mixed with such a
surplus impurity gas.

[0286] Accordingly, the efficiency of the deposition process of forming a
desired thin film may be greatly increased. Furthermore, since undesired
components may be easily prevented or blocked from being adsorbed onto
the first and second substrates 701 and 702 and the purging process is
not used, purge gas impurities generated when a purge gas is used may be
eliminated from being deposited together with a desired thin film on the
first and second substrates 701 and 702. Therefore, it is possible to
form a thin film having uniform characteristics that are physically and
chemically improved.

[0287] Also, in the current embodiment, a deposition process is performed
while the stage 720 and the first and second plasma generators 781 and
782 are being moved using the first to third drivers 751 to 753. Also, a
plurality of deposition processes are sequentially performed using the
first injection hole 731, the third injection hole 733, the fifth
injection hole 735, and the first and second plasma generators 781 and
782. Thus, it is possible to greatly reduce an amount of time required to
form a thin film to a desired thickness, thereby increasing the
efficiency of the deposition process.

[0288] Also, in the current embodiment, the first and second mounting
surfaces 721 and 722 are respectively formed on both surfaces of the
stage 720, and the first and second substrates 701 and 702 are
concurrently or simultaneously mounted on the stage 720. Accordingly, the
efficiency of the deposition process may be enhanced. Furthermore, since
the first and second substrates 701 and 702 are disposed on both surfaces
of the stage 720 to be parallel with each other, surfaces of the first
and second substrates 701 and 702 on which a thin film is to be formed
are not disposed to face each other. Thus, a deposition process performed
on the first substrate 801 and a deposition process performed on the
second substrate 802 are not influenced by each other. Accordingly, it is
possible to form a thin film having uniform and improved characteristics
on both the first and second substrates 701 and 702.

[0289] FIG. 11 is a schematic cross-section view of a vapor deposition
apparatus 800 according to another embodiment of the present invention.
Referring to FIG. 11, the vapor deposition apparatus 800 includes a
chamber 810, a stage 820, an injection portion 830, a first mask 841, a
second mask 842, a first driver 851, a second driver 852, a third driver
853, a first plasma generator 881, and a second plasma generator 882.

[0290] The chamber 810 includes an exhaust port 811 on a bottom thereof.
The exhaust port 811 is an outlet via which a gas is exhausted, and may
be connected to a pump (not shown) to help exhaust the gas.

[0291] Although not shown, the pump is used to control pressure applied to
the chamber 810 so that the pressure is maintained constant. A heating
unit (not shown) may be disposed inside or outside the chamber 810 to
heat the inside of the chamber 810, thereby enhancing the efficiency of a
deposition process.

[0292] The stage 820 includes a first mounting surface 821 and a second
mounting surface 822. The first and second mounting surfaces 821 and 822
are located to be parallel with a direction in which a gravitational
force acts. In other words, the first and second mounting surfaces 821
and 822 are located perpendicularly to the ground. To this end, the stage
820 is disposed perpendicularly to the ground.

[0293] A first substrate 801 and a second substrate 802 are disposed on
the stage 820. Specifically, the first substrate 801 and the second stage
802 are respectively mounted on the first mounting surface 821 and the
second mounting surface 822 of the stage 820.

[0294] The first and second mounting surfaces 821 and 822 are located to
be parallel with each other.

[0295] A fixing unit (not shown) may be used to respectively fix the
mounted first and second substrates 801 and 802 onto the first and second
mounting surfaces 821 and 822. Any of various members, e.g., a clamp, a
pressurizing member, and an adhesive material, may be used as the fixing
unit.

[0296] The first substrate 801 and the first plasma generator 881 are
disposed apart from each other to form a space therebetween, and the
second substrate 802 and the second plasma generator 882 are disposed
apart from each other to form a space therebetween. The first and second
plasma generators 881 and 882 may be disposed in parallel with the first
and second substrates 801 and 802, respectively. Also, the first plasma
generator 881 may have the same size as the first substrate 801 to
correspond to the first substrate 801 or may be larger than the first
substrate 801, and the second plasma generator 882 may have the same size
as the second substrate 802 to correspond to the second substrate 802 or
may be larger than the second substrate 802.

[0297] The first and second masks 841 and 842 are disposed on the first
and second substrates 801 and 802. Specifically, the first and second
masks 841 and 842 may be respectively disposed on the first and second
substrates 801 and 802.

[0298] Although not shown, each of the first and second masks 841 and 842
includes apertures as in the previous embodiments. Each of the apertures
has a shape corresponding to a respective one of patterns of a thin film
to be formed on each of the first and second substrates 801 and 802.

[0299] Shapes of the first and second plasma generators 881 and 882 are
not limited. In other words, the first and second plasma generators 881
and 882 may have any of various shapes, provided they can receive a
reaction gas, generate plasma from the reaction gas, and respectively
discharge the plasma toward the first and second substrates 801 and 802.
The first and second plasma generators 881 and 882 are as described above
in the previous embodiments and are thus not described in detail here.

[0300] The first to third drivers 851 to 853 are respectively connected to
the stage 820 and the first and second plasma generators 881 and 882.
Specifically, the first driver 851 is connected to the stage 820, the
second driver 852 is connected to the first plasma generator 881, and the
third driver 853 is connected to the second plasma generator 882.

[0301] FIG. 11 illustrates three separate drivers, i.e., the first to
third drivers 851 to 853, but aspects of the present invention are not
limited thereto. In other words, one driver may be used to concurrently
or simultaneously move the stage 820 and the first and second plasma
generators 881 and 882.

[0302] Referring to FIG. 11, the first driver 851 moves the stage 820 in a
direction indicated by an arrow M or a direction opposite to that
direction. In other words, the first driver 851 moves the stage 820 in
the X-axis direction. Thus, the first and second substrates 801 and 802
may be moved in a direction perpendicular to surfaces of the first and
second substrates 801 and 802 on which a thin film is to be formed.

[0303] The second and third drivers 852 and 853 respectively move the
first and second plasma generators 881 and 882 in the direction indicated
by the arrow M or the direction opposite to that direction. In other
words, the second and third drivers 852 and 853 respectively move the
first and second plasma generators 881 and 882 in the X-axis direction.
Thus, the first and second plasma generators 881 and 882 may be
respectively moved in the directions perpendicular to the surfaces of the
first and second substrates 801 and 802 on which a thin film is to be
formed.

[0304] In this case, the first to third drivers 851 to 853 are controlled
to maintain spaces between the first substrate 801 and the first plasma
generator 881, and between the second substrate 802 and the second plasma
generator 882, to be constant.

[0305] The injection portion 830 is connected to the chamber 810. At least
one gas is injected toward the first and second substrates 801 and 802
via the injection portion 830. Specifically, the injection portion 830
includes a first injection hole 831, a second injection hole 832, a third
injection hole 833, a fourth injection hole 834, a fifth injection hole
835, and a sixth injection hole 836.

[0306] The first to sixth injection holes 831 to 836 are arranged in a
direction in which the first and second substrates 801 and 802 are moved.
In other words, the first to sixth injection holes 831 to 836 are
disposed apart from one another in the X-axis direction.

[0307] Shapes of the first to sixth injection holes 831 to 836 are not
limited. For example, they may each be in the form of a dot or a line
corresponding to a width of each of the first and second substrates 801
and 802.

[0308] A gas is injected through the first to sixth injection holes 831 to
836 in a direction parallel with planar surfaces of the first and second
substrates 801 and 802. In other words, a gas is injected through the
first to sixth injection holes 831 to 836 in a direction parallel with a
direction in which a gravitational force acts.

[0309] Specifically, a source gas S is sequentially or concurrently or
simultaneously injected through the first, third, and fifth injection
holes 831, 833, and 835. The second, fourth, and sixth injection holes
832, 834, and 836 may not need to be formed since a reaction gas that is
in a plasma state is injected via the first and second plasma generators
881 and 882. However, aspects of the present invention are not limited
thereto, and the reaction gas may be injected through the second, fourth,
and sixth injection holes 832, 834, and 836 rather than supply portions
(not shown) of the first and second plasma generators 881 and 882. That
is, the reaction gas may be injected through the second, fourth, and
sixth injection holes 832, 834, and 836, be changed to the form of plasma
within the first and second plasma generators 881 and 882, and then be
injected toward the first and second substrates 801 and 802.

[0310] An operation of the vapor deposition apparatus 800 according to the
current embodiment is briefly described below.

[0311] The first and second substrates 801 and 802 are mounted on the
mounting surface 821 of the stage 820. The first mask 841 including
apertures (not shown) corresponding to patterns of a thin film that is to
be deposited on the first substrate 801, is disposed on the first
substrate 802. The second mask 842 including apertures (not shown)
corresponding to patterns of a thin film that is to be deposited on the
second substrate 802, is disposed on the second substrate 802.

[0312] Then, a source gas S is injected through the first injection hole
831 of the injection portion 830. In this case, the source gas S may be
injected toward the spaces between the first substrate 801 and the first
plasma generator 881, and between the second substrate 802 and the second
plasma generator 882. While the source gas S is being injected, the first
and second plasma generators 881 and 882 are controlled not to operate.

[0313] The source gas S is adsorbed onto the first and second substrates
801 and 802. In particular, the source gas S is adsorbed onto regions on
the first and second substrates 801 and 802, which correspond to the
apertures. Then, the exhaust process is performed using the exhaust port
811 to form either a single atomic layer or multiple atomic layers of the
source gas S on the first and second substrates 801 and 802.

[0314] Then, a reaction gas is injected through the supply portions of the
first and second plasma generators 881 and 882. When the reaction gas is
injected, plasma is generated in the space between the first plasma
electrode and the second plasma electrode. The plasma is discharged
toward the first and second substrates 801 and 802 via the outlets of the
plasma generators 881 and 882.

[0315] The plasma of the reaction gas is adsorbed onto the regions on the
first and second substrates 801 and 802 corresponding to the apertures.
Then, the exhaust process is performed using the exhaust port 811 to form
either a single atomic layer or multiple atomic layers of the reaction
gas on the regions on the first and second substrates 801 and 802
corresponding to the apertures.

[0316] Accordingly, a single atomic layer or multiple atomic layers of the
source gas S and the reaction gas are formed on the regions of the first
and second substrates 801 and 802 corresponding to the apertures.

[0317] Then, the stage 820 and the first and second plasma generators 881
and 882 are moved in the X-axis direction, i.e., the direction indicated
by the arrow M, by using the first to third drivers 851 to 853.
Accordingly, the spaces between the first substrate 801 and the first
plasma generator 881, and between the second substrate 802 and the second
plasma generator 882 are maintained constant even after the stage 820 and
the first and second plasma generators 881 and 882 are moved.

[0318] Then, a source gas S is injected through the third injection hole
833 of the injection portion 830. In this case, the source gas S may be
injected toward the spaces between the first substrate 801 and the first
plasma generator 881, and between the second substrate 802 and the second
plasma generator 882. While the source gas S is being injected, the first
and second plasma generators 881 and 882 are controlled not to operate.

[0319] The source gas S is adsorbed onto the first and second substrates
801 and 802. Then, the exhaust process is performed using the exhaust
port 811 to form either a single atomic layer or multiple atomic layers
of the source gas S on the first and second substrates 801 and 802.

[0320] Then, a reaction gas is injected through the supply portions of the
first and second plasma generators 881 and 882. When the reaction gas is
injected, plasma is generated in the space between the first plasma
electrode and the second plasma electrode. The plasma is discharged
toward the first and second substrates 801 and 802 via the outlets of the
plasma generators 881 and 882.

[0321] Thus, the plasma of the reaction gas is adsorbed onto the first and
second substrates 801 and 802. Then, the exhaust process is performed
using the exhaust port 811 to form either a single atomic layer or
multiple atomic layers of the reaction gas on the first and second
substrates 801 and 802.

[0322] Accordingly, a single atomic layer or multiple atomic layers of the
source gas S and the reaction gas are formed on the thin film, i.e., the
single atomic layer of or multiple atomic layers of the source gas S and
the reaction gas, which was formed on the first and second substrates 801
and 802 by using the first injection hole 831 and the first and second
plasma generators 881 and 882 before the first and second drivers 851 and
852 were driven.

[0323] Then, the stage 820 and the first and second plasma generators 881
and 882 are moved in the X-axis direction, i.e., the direction indicated
by the arrow M, by using the first to third second drivers 851 to 853.

[0324] Then, a thin film is additionally formed on the first and second
substrates 801 and 802 by using the fifth injection hole 835 and the
first and second plasma generators 881 and 782 in the same manner in
which the previous thin film was formed using the first injection hole
831 and the first and second plasma generators 882 and 881.

[0325] Accordingly, it is possible to form a thin film to a desired
thickness on the first and second substrates 801 and 802 in the chamber
810. In other words, moving of the stage 820 and the first and second
plasma generators 881 and 882 may be controlled according to the desired
thickness of the thin film.

[0326] In the current embodiment, the source gas S is injected through the
injection portion 830 in a direction parallel with upper surfaces of the
first and second substrates 801 and 802. In particular, the first and
second substrates 801 and 802 are disposed perpendicularly to the ground,
i.e., in a direction in which a gravitational force acts. Thus, when the
source gas S is supplied via the injection portion 830 to be adsorbed
onto the first and second substrates 801 and 802, it is possible to
reduce an unnecessarily adsorbed amount on the first and second
substrates 801 and 802 when the source gas S is adsorbed onto the first
and second substrates 801 and 802. Similarly, it is possible to reduce an
amount of the plasma generated by the first and second plasma generators
881 and 882 that ends up being unnecessarily adsorbed onto the first and
second substrates 801 and 802.

[0327] In other words, an amount of surplus components adsorbed onto the
first and second substrates 801 and 802 or an uneven lump of the
components drop downward due to gravity, thereby reducing the amounts of
the surplus source gas S and the surplus plasma. Such surplus components
may also be easily removed by performing the exhaust process using the
exhaust port 811 below the first and second substrates 801 and 802. Thus,
the source gas S is injected through the first injection hole 831 of the
injection portion 830, the exhaust process is performed without
performing a purging process using an additional purge gas, the reaction
gas is injected through the first and second plasma generators 881 and
882, and the exhaust process is performed again without performing the
purging process, thereby completing the deposition process.

[0328] In particular, in the current embodiment, the first and second
plasma generators 881 and 882 are disposed to face the first and second
substrates 801 and 802, respectively. The first and second plasma
generators 881 and 882 are disposed separately from the injection portion
830 via which the source gas S is injected. Thus, the process using the
source gas S and the process using the reaction gas may be performed
individually, thereby easily forming a thin film that does not contain
impurities.

[0329] Also, the first and second plasma generators 881 and 882 are
disposed apart from the first and second substrate 801 and 802, and the
source gas S is injected through the spaces between the first plasma
generator 881 and the first substrate 801, and between the second plasma
generator 882 and the second substrate 802 via the injection portion 830.
Thus, the first and second plasma generators 881 and 882 may be used as
guide members to block undesired impurities. To this end, the first and
second plasma generators 881 and 882 may be formed to have the same size
as or to be larger than the first and second substrates 801 and 802. For
example, when the source gas S is injected through the third injection
hole 833, a surplus impurity gas generated and adsorbed onto the first
and second substrates 801 and 802 when the source gas S injected through
the first injection hole 831 reacts with the first and second substrate
801 and 802 may not be completely exhausted via the exhaust port 811. In
this case, the process using the source gas S injected via the third
injection hole 833 may be influenced by the surplus impurity gas, thereby
degrading the characteristics of a thin film to be formed on the first
and second substrates 801 and 802. However, according to the current
embodiment, the source gas S is injected toward the spaces between the
first substrate 801 and the first plasma generator 881, and between the
second substrate 802 and the second plasma generators 882 via the third
injection hole 833. Thus, the first and second plasma generators 881 and
882 may prevent or block the source gas S from being mixed with such a
surplus impurity gas.

[0330] Accordingly, the efficiency of the deposition process of forming a
desired thin film may be greatly increased. Furthermore, since undesired
components may be easily prevented or blocked from being adsorbed onto
the first and second substrates 801 and 802 and the purging process is
not used, purge gas impurities generated when a purge gas is used may be
eliminated from being deposited together with a desired thin film on the
first and second substrates 801 and 802. Therefore, it is possible to
form a thin film having uniform characteristics that are physically and
chemically improved.

[0331] Also, in the current embodiment, the deposition process is
performed while the stage 820 and the first and second plasma generators
881 and 882 are being moved using the first to third drivers 851 to 853.
Also, a plurality of deposition processes are sequentially performed
using the first injection hole 831, the third injection hole 833, the
fifth injection hole 835, and the first and second plasma generators 881
and 882. Thus, it is possible to greatly reduce an amount of time
required to form a thin film to a desired thickness, thereby increasing
the efficiency of the deposition process.

[0332] Also, in the current embodiment, the first and second mounting
surfaces 821 and 822 are respectively formed on both surfaces of the
stage 820, and the first and second substrates 801 and 802 are
concurrently or simultaneously mounted on the stage 820. Accordingly, the
efficiency of the deposition process may be enhanced. Furthermore, since
the first and second substrates 801 and 802 are disposed on both surfaces
of the stage 820 to be parallel with each other, surfaces of the first
and second substrates 801 and 802 on which a thin film is to be formed
are not disposed to face each other. Thus, a deposition process performed
on the first substrate 801 and a deposition process performed on the
second substrate 802 are not influenced by each other. Accordingly, it is
possible to form a thin film having uniform and improved characteristics
on both the first and second substrates 801 and 802.

[0333] Also, in the current embodiment, the first and second masks 841 and
842 are disposed on the first and second substrates 801 and 802 to help
form the patterns of thin films on the first and second substrates 801
and 802.

[0334]FIG. 12 is a schematic cross-sectional view of an organic
light-emitting display apparatus manufactured based on a method of
manufacturing the organic light-emitting display apparatus according to
an embodiment of the present invention. Specifically, FIG. 12 illustrates
an organic light-emitting display apparatus manufactured using one of the
vapor deposition apparatuses 100 to 800 according to the various
embodiments of the present invention described above.

[0335] Referring to FIG. 12, the organic light-emitting display apparatus
10 is formed on a substrate 30. The substrate 30 may be formed of, for
example, glass, plastic, or metal. On the substrate 30, a buffer layer 31
is formed to provide a planarized surface on the substrate 30 and to
protect the substrate 30 from moisture or foreign substances.

[0336] A thin film transistor (TFT) 40, a capacitor 50, and an organic
light-emitting device (OLED) 60 are disposed on the buffer layer 31. The
TFT 40 includes an active layer 41, a gate electrode 42, and a
source/drain electrode 43. The OLED 60 includes a first electrode 61, a
second electrode 62, and an intermediate layer 63.

[0337] In detail, the active layer 41 is formed to have a suitable pattern
(e.g., a predetermined pattern) on the buffer layer 31. The active layer
41 may include a p-type or n-type semiconductor material. A gate
insulating layer 32 is formed on the active layer 41. The gate electrode
42 is formed on a region of the gate insulating layer 32 corresponding to
the active layer 41. An interlayer insulating layer 33 is formed covering
the gate electrode 42, and the source/drain electrode 43 is disposed on
the interlayer insulating layer 33 to contact a suitable region (e.g., a
predetermined region) of the active layer 41. A passivation layer 34 is
formed covering the source/drain electrode 43, and an additional
insulating layer (not shown) may be formed on the passivation layer 34 to
planarize the passivation layer 34.

[0338] The first electrode 61 is formed on the passivation layer 34. The
first electrode 61 is electrically connected to the drain electrode 43. A
pixel defining layer 35 is formed covering the first electrode 61. An
opening 64 is formed in the pixel defining layer 35, and the intermediate
layer 63 including an organic emission layer (not shown) is formed in a
region defined by the opening 64. The second electrode 62 is formed on
the intermediate layer 63.

[0339] An encapsulating layer 70 is formed on the second electrode 62. The
encapsulating layer 70 may contain an organic or inorganic material, and
may have a structure in which an organic layer and an inorganic layer are
alternately stacked.

[0340] The encapsulating layer 70 may be formed using one of the vapor
deposition apparatuses 100 to 800. In other words, the encapsulating
layer 70 may be formed by moving the substrate 30 on which the second
electrode 20 is formed into a chamber (not shown) and then performing a
vapor deposition process on the substrate 30 as described above.

[0341] However, aspects of the present invention are not limited thereto.
For example, insulating layers included in the organic light-emitting
display apparatus 10, e.g., the buffer layer 31, the gate insulating
layer 32, the interlayer insulating layer 33, the passivation layer 34,
and the pixel defining layer 35, may be formed by using a vapor
deposition apparatus according to an embodiment of the present invention.

[0342] In addition, various conductive thin films, e.g., the active layer
41, the gate electrode 42, the source/drain electrode 43, the first
electrode 61, the intermediate layer 63, and the second electrode 62, may
also be formed using a vapor deposition apparatus according to an
embodiment of the present invention.

[0343] With a vapor deposition apparatus and method and a method of
manufacturing an organic light-emitting display apparatus according to an
embodiment of the present invention, it is possible to efficiently
perform a deposition process and to easily improve characteristics of a
thin film.

[0344] While this invention has been particularly shown and described with
reference to exemplary embodiments thereof, it will be understood by
those of ordinary skill in the art that various changes in form and
details may be made therein without departing from the spirit and scope
of the invention as defined by the appended claims, and their
equivalents.