The level-shifting–induced negative magnetoresistance
in the nearest-neighbor hopping conduction

X. R. Wang1, S. C. Ma1 and X. C. Xie2

1
Department of Physics, The Hong Kong University of Science
and Technology Clear Water Bay, Hong Kong
2
Department of Physics, Oklahoma State University - Stillwater, OK 74078, USA

Received:
21
July
1998
Accepted:
26
November
1998

Abstract

We propose a new mechanism of negative magnetoresistance in
non-magnetic granular materials in which electron transport is
dominated by hopping between two nearest-neighbor clusters.
We study the dependence of magnetoresistance on
temperature and separation between neighboring clusters.
At a small separation we find a negative magnetoresistance at low
temperatures and it changes over to a positive value as
temperature increases. For a fixed temperature, magnetoresistance changes
from negative to positive when the cluster separation increases.
The change of magnetoresistance can be more than 80 %
at low temperatures.

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.