A microstrip antenna integration with a power amplifier is presented for the 60 GHz band. The antenna is a single layer 4×4 square patches array. The power amplifier is injection locked, designed in a 65 nm CMOS technology, with single-ended input and output signals. The integration is realized by means of bond wire connections. The antenna and the power amplifier are fabricated, characterized and measured separately. The integrated design is fabricated and measured, results are de-embedded to extract the power amplifier parameters and to compare with separate device measurements. At 56.5 GHz the integrated sample has about 12 dB gain increase with respect to the antenna sample without power amplifier. The presented design is targeting... (More)

A microstrip antenna integration with a power amplifier is presented for the 60 GHz band. The antenna is a single layer 4×4 square patches array. The power amplifier is injection locked, designed in a 65 nm CMOS technology, with single-ended input and output signals. The integration is realized by means of bond wire connections. The antenna and the power amplifier are fabricated, characterized and measured separately. The integrated design is fabricated and measured, results are de-embedded to extract the power amplifier parameters and to compare with separate device measurements. At 56.5 GHz the integrated sample has about 12 dB gain increase with respect to the antenna sample without power amplifier. The presented design is targeting 60 GHz band wireless communication system applications.