ㆍIn a growth of catalyst free GaAs nanowire, when Arsenic was injected by pulse while maintaining Ga injection, high Ga supersaturation could form nanowire nucleation easily though interaction between Ga and etched SiO2 layer in the initial of growth time.
ㆍWe consistently had grown the continuous GaAs injection according to varying amount of As4 for increasing length. GaAs nanowire could promote further more with length L~3μm, diameter d~100 nm.
ㆍWe could find full zinc-blende structure GaAs nanowire by transmission electron microscopy (TEM) analysis