Abstract

This research aim is to study and understand the process of preparation semiconductor material Tin Sulfide (SnS) thin films prepared using the vacuum evaporation method, as well as to know the electrical and optical of Tin Sulfide (SnS) properties, determine the effect of variations of spacer to the transmitance and absorbance of thin films of semiconductor material Tin Sulfide (SnS) produced and kwowing results gap energy of semiconductor material Tin Sulfide (SnS) produced. Samples of Tin Sulfide (SnS) thin films preparation results using evaporation method at a pressure of 210-5 mbar with spacer variation by 10 cm and 310-5 mbar with spacer variation by 15 cm. Deposited process of SnS thin films is done by giving the distance (spacer) between the substrate by source. The proximity of the evaporation method will affect how much material will be deposited on the substrate source. Characterization process is performed using FFP and UV-Vis. FFP characterization results showed that the Tin Sulfide (SnS) thin films produced resistance 9.38104 with spacer distance of 10 cm and 9.96104 with spacer distance of 15 cm respectively.UV-Vis characterization results showed that the Tin Sulfide (SnS) thin films produced gap energy 1.49 eV with spacer distances of 10 cm and 1.48 eV with spacer distances of 15 cm respectively. Tin Sulfide (SnS) thin films preparation results with variations spacer distance of 10 cm has a better quality than thin films with spacer distance of 15 cm variation in terms of resistivity values.