The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.

Source

Abstract

High-quality GaAs-based quantum cascade laser (QCL) structures for the terahertz (THz) emission have been grown by solid source molecular-beam epitaxy. Ex-situ high-resolution x-ray diffraction shows that layer thickness and its control is the most critical growth aspect and that the lasing potential of the structure can be determined by the thickness accuracy of the layers. For our samples, the thickness tolerance for working lasing structures emitting approximately 100 μm was determined to be minimally above 1% for a 15 μm active region which was composed of 54.6 nm cascade cells. Increasing interface roughness adversely affects the lasing threshold and power.

Accessibility options

You can change the active elements on the page (buttons and links) by pressing a combination of keys:

TAB go to the next element

SHIFT + TAB go to the previous element

Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.