15 3-D parasitic capacitancesNormalized CgsHigher parasitic capacitances: TG > DG > SG due to more complex 3-D interconnectionMain part of the parasitic capacitance is related to fringing field betweengate-to-source and gate-to-drain through BOX

16 Cutoff frequencyFor long L, fT of SG slightly higher due to lower parasitic C compared to MuGAt small L, SG device, very high SCE, leading to bad fT valueEven MuG devices with L < 40 nm, degradation appearsTo follow up the ITRS, we have to reduce Wfin or tsi as well as EOT (high-k)Vgo = 500 mV and Vds = 1 V