As semiconductor device architectures
continue to decrease in size, the ability to measure the position and
composition of individual atoms becomes increasingly critical. With fewer
dopant atoms within such devices, quantitative analysis with current techniques
becomes increasingly difficult. Atom probe tomography is one of the few methods
available to analyze and image solid materials at the atomic scale yielding
full elemental and position information in three dimensions (3D). For continued
advancements in semiconductor manufacturing, the development of atom probe
tomography into a reliable metrology technique will be a necessity.

This research addresses the challenge
presented above of quantifying the position and elemental identity of
individual atoms within a 3D nanostructure. The local electrode atom probe (LEAP)
coupled with a pulsed UV laser has allowed for data acquisition of
semiconducting and insulating materials previously inaccessible by traditional
voltage-pulsed atom probe. Optimization of sample preparation, experimental
conditions and data analysis for use in the manufacturing of 3D transistors has
also been addressed by this research. This technique is positioned to provide
key information in the design, quality control and failure analysis of
manufactured devices. We report on the advances and limitations of chemical
tomography for 3D nanostructures using atom probe tomography.