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Abstract:

An apparatus includes a structure that includes a bottom cap layer
surrounding a metal pad. The apparatus also includes a magnetic tunnel
junction (MTJ) device that includes a bottom electrode coupled to the
structure. The MTJ device includes magnetic tunnel junction layers, a top
electrode, and a logic cap layer. The MTJ device is offset with respect
to the metal pad.

Claims:

1. An apparatus comprising: a structure that comprises a bottom cap layer
surrounding a metal pad; and a magnetic tunnel junction (MTJ) device
comprising a bottom electrode coupled to the structure, the MTJ device
comprising magnetic tunnel junction layers, a top electrode, and a logic
cap layer, wherein the MTJ device is offset with respect to the metal
pad.

2. The apparatus of claim 1, wherein the offset defines a distance in a
direction parallel to a surface of the metal pad.

3. The apparatus of claim 1, wherein an easy axis magnetic tunnel
junction magnetic anneal of at least one of the magnetic tunnel junction
layers aligns a magnetic field orientation of the MTJ device.

8. The apparatus of claim 1, integrated in at least one semiconductor
die.

9. The apparatus of claim 8, further comprising a device selected from
the group consisting of a set top box, a music player, a video player, an
entertainment unit, a navigation device, a communications device, a
personal digital assistant (PDA), a fixed location data unit, and a
computer, into which the at least one semiconductor die is integrated.

10. An apparatus comprising: means for supporting and surrounding a metal
pad; and means for coupling a magnetic tunnel junction (MTJ) device to
the metal pad, wherein the MTJ device is offset with respect to the metal
pad, and wherein the MTJ device comprises means for storing data within
the MTJ device and means for conducting current.

11. The apparatus of claim 10, wherein the MTJ device is integrated in at
least one semiconductor die.

12. The apparatus of claim 11, further comprising a device selected from
the group consisting of a set top box, a music player, a video player, an
entertainment unit, a navigation device, a communications device, a
personal digital assistant (PDA), a fixed location data unit, and a
computer, into which the at least one semiconductor die is integrated.

13. A method comprising: writing, by a processor of an electronic device,
information to a storage device; and reading the information from the
storage device, wherein the storage device includes: a structure that
comprises a bottom cap layer surrounding a metal pad; and a magnetic
tunnel junction (MTJ) device comprising a bottom electrode coupled to the
structure, the MTJ device comprising magnetic tunnel junction layers, a
top electrode, and a logic cap layer, wherein the MTJ device is offset
with respect to the metal pad.

14. The method of claim 13, wherein the offset defines a distance in a
direction parallel to a surface of the metal pad.

15. The method of claim 13, wherein an easy axis magnetic tunnel junction
magnetic anneal of at least one of the magnetic tunnel junction layers
aligns a magnetic field orientation of the MTJ device.

20. A computer-readable storage device storing instructions executable by
a processor to perform operations comprising: writing information to a.
storage apparatus; and reading the information from the storage
apparatus, wherein the storage apparatus includes: a structure that
comprises a bottom cap layer surrounding a metal pad; and a magnetic
tunnel junction (MTJ) device comprising a bottom electrode coupled to the
structure, the MTJ device comprising magnetic tunnel junction layers, a
top electrode, and a logic cap layer, wherein the MTJ device is offset
with respect to the metal pad.

Description:

I. CLAIM OF PRIORITY

[0001] The present application claims priority from and is a divisional of
pending patent application Ser. No. 12/465,744, filed May 14, 2009,
entitled "MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION," the content
of which is incorporated by reference herein in its entirety.

[0003] MTJ elements may be used to create a magnetic random access memory
(MRAM). An MTJ element typically includes a pinned layer, a magnetic
tunnel barrier, and a free layer, where a bit value is represented by a
magnetic moment in the free layer. A bit value stored by an MTJ element
is determined by a direction of the magnetic moment of the free layer
relative to a direction of a fixed magnetic moment carried by the pinned
layer. The magnetization of the pinned layer is fixed while the
magnetization of the free layer may be switched.

[0004] MRAM areas containing MTJ elements and logic areas containing logic
and control elements may be fabricated on the same wafer. The structures
and process sequences used to form the MTJ elements are generally
different from the structures and process sequences used to form the
logic and control elements. It may be challenging to integrate both types
of processes together without negatively impacting both the MRAM areas
and the logic areas. For example, certain MRAM processes, if performed
earlier in the sequence of process steps, may cause recesses in
interlayer dielectric (ILD) or inter metal layer (IMD) portions of the
logic areas. Similarly, certain logic processes, if performed earlier in
the sequence of process steps, may add to :surface roughness in the MRAM
areas. The MTJ elements may be impacted by the surface roughness of an
underlying copper layer, for example. In addition, bottom vias used with
conventional MTJ elements may add series resistance to the MTJ elements,
which may degrade a tunneling magnetoresistance (TMR) of the MTJ
elements.

IV. SUMMARY

[0005] The MRAM and logic processes may be integrated together,
eliminating the surface roughness concerns for the MTJ devices and
avoiding formation of recesses in the interlayer dielectric (ILD)
portions of the logic areas. Damage to logic layers in the logic areas
due to MRAM processing may be avoided by implementing a bottom cap layer
formed before a copper damascene process is performed. The copper surface
roughness impact may be avoided by moving the MTJ device away from the
copper pad. The added series resistance of a bottom via may be avoided by
directly contacting a bottom electrode of the MTJ to the copper pad.
Surface roughness of the bottom cap layer may be reduced by first
depositing the bottom electrode on the bottom cap layer and then adding
MTJ films on the bottom electrode. The MRAM processes may be performed
before the logic processes are performed. A top via may be added to
selectively open the top of the MTJ device. The height of the top via may
be adjustable.

[0006] In a particular embodiment, a method is disclosed that includes
forming a magnetic tunnel junction (MTJ) device on a structure that
includes a bottom cap layer and a bottom metal-filled trench having a
normal axis. The magnetic tunnel junction device includes a bottom
electrode, magnetic tunnel junction layers (anti-ferromagnetic layer,
fixed layer, tunnel barrier, free layer, etc.), a magnetic tunnel
junction seal layer, a top electrode, and a logic cap layer. The magnetic
tunnel junction device has an MTJ axis that is offset from the normal
axis. The method also includes forming and planarizing an insulating
layer above the logic cap layer. The method further includes performing a
copper damascene process to open a top trench in the insulating layer, to
open a top via to the top electrode, to open a logic via to metal in the
bottom metal-filled trench, or to open the top via and the logic via, to
deposit copper in the top trench and in the top via, in the logic via, or
in the top via and in the logic via, and to perform a copper chemical
mechanical planarization of the deposited copper.

[0007] In another particular embodiment, an apparatus is disclosed that
includes a structure that includes a bottom cap layer surrounding a metal
pad. The apparatus also includes a magnetic tunnel junction (MTJ) device
including a bottom electrode coupled to the structure. The NITS device
includes magnetic tunnel junction layers (an anti-ferromagnetic layer, a
fixed layer, a tunnel barrier layer, a free layer, an MTJ cap layer,
etc.), a top electrode, and a logic cap layer, where the MTJ device is
offset with respect to the metal pad.

[0008] In another particular embodiment, a method is disclosed that
includes forming a first insulating layer above a substrate. The method
also includes forming a bottom cap layer above the first insulating
layer. The method holler includes performing a first copper damascene
process to open bottom trenches and bottom vias in the first insulating
layer, to plate copper in the bottom trenches and in the bottom vias, and
to perform a copper chemical mechanical planarization. The copper-filled
bottom trenches each have a normal axis. The method also includes forming
a bottom electrode above the bottom cap layer and above the copper-filled
bottom trenches, forming magnetic tunnel junction layers above the bottom
electrode, forming a hardmask above the magnetic tunnel junction layers,
and patterning magnetic tunnel junction (MTJ) structures each having an
MTJ axis that is offset from the normal axis of an adjacent copper-filled
bottom trench. The method further includes forming a magnetic tunnel
junction seal layer above and adjacent to the magnetic tunnel junction
structures and above the bottom electrode. The method also includes
forming a second insulating layer above the magnetic tunnel junction seal
layer and planarizing the second insulating layer and opening tops of the
magnetic tunnel junction structures. The method further includes forming
a top electrode above the planarized second insulating layer and above
the tops of the magnetic tunnel junction structures and patterning the
top electrode and the bottom electrode. The method also includes forming
a logic cap layer above the bottom cap layer, the logic cap layer
adjacent to the magnetic tunnel junction seal layer, adjacent to the
second insulating layer and above the patterned top electrode. The method
further includes forming and planarizing a third insulating layer above
the logic cap layer and performing a second copper damascene process to
open a top trench in the third insulating layer and to open at least one
of a top via to the patterned top electrode and a logic via to one of the
copper-filled bottom trenches, to plate copper in the top trench and in
the at least one of the top via and the logic via, and to perform a
copper chemical mechanical planarization.

[0009] One particular advantage provided by at least one of the disclosed
embodiments is that the MRAM and logic processes may be integrated
together seamlessly, eliminating the surface roughness concerns for the
MTJ devices and avoiding formation of recesses in the interlayer
dielectric (ILD) portions of the logic areas. Damage to logic layers in
the logic areas due to MRAM processing may be avoided by implementing a
bottom cap layer that is formed before a copper damascene process is
performed. Surface roughness of the bottom cap layer may be reduced by
first depositing the bottom electrode on the bottom cap layer and the MTJ
films on the bottom electrode. Other aspects, advantages, and features of
the present disclosure will become apparent after review of the entire
application, including the following sections: Brief Description of the
Drawings, Detailed Description, and the Claims.

V. BRIEF DESCRIPTION OF THE DRAWINGS

[0010]FIG. 1 is a first illustrative diagram of at least one stage in the
process of fabricating a magnetic tunnel junction (MTJ) device after
forming a bottom cap layer on a first insulating layer;

[0011]FIG. 2 is a second illustrative diagram of at least one stage in
the process of fabricating a magnetic tunnel junction (MTJ) device after
forming bottom metal-filled trenches and bottom vias in the first
insulating layer;

[0012] FIG. 3 is a third illustrative diagram of at least one stage in the
process of fabricating a magnetic tunnel junction (MTJ) device after
forming photoresist on a hardmask layer to pattern MTJ structures;

[0013]FIG. 4 is a fourth illustrative diagram of at least one stage in
the process of fabricating a magnetic tunnel junction (MTJ) device after
forming a second insulating layer on the MTJ structures;

[0014]FIG. 5 is a fifth illustrative diagram of at least one stage in the
process of fabricating a magnetic tunnel junction (MTJ) device after
forming a hardmask and photoresist to pattern a top electrode and a
bottom electrode;

[0015]FIG. 6 is a sixth illustrative diagram of at least one stage in the
process of fabricating a magnetic tunnel junction (MTJ) device after
forming and planarizing a third insulating layer;

[0016]FIG. 7 is a seventh illustrative diagram of at least one stage in
the process of fabricating a magnetic tunnel junction (MTJ) device after
forming a top copper-filled trench and a top via and a logic via in the
third insulating layer;

[0017]FIG. 8 is an eighth illustrative diagram of at least one stage in
the process of fabricating a magnetic tunnel junction (MTJ) device after
forming a top copper-filled trench and a top via and a logic via in the
third insulating layer, the top via and the logic via having different
heights than the top via and the logic via of FIG. 7;

[0018]FIG. 9 is a flow diagram of a first illustrative embodiment of a
method of forming a magnetic tunnel junction (MTJ) device;

[0019]FIG. 10 is a flow diagram of a first portion of a second
illustrative embodiment of a method of forming a magnetic tunnel junction
(MTJ) device;

[0020]FIG. 11 is a flow diagram of a second portion of the second
illustrative embodiment of a method of forming a magnetic tunnel junction
(MTJ) device;

[0021]FIG. 12 is a block diagram of a particular embodiment of a portable
communication device including a module having MTJ structures with an
offset MTJ axis; and

[0023] Particular embodiments of the present disclosure are described
below with reference to the drawings. In the description, common features
are designated by common reference numbers through the drawings.
Referring to FIG. 1, a first illustrative diagram of at least one stage
in the process of fabricating a magnetic tunnel junction (MTJ) device is
depicted and generally designated 100. A first insulating layer 104 may
be formed above a substrate 102. The substrate 102 represents any
underlying layer, such as a cap layer for other underlying layers. For
example, the first insulating layer 104 may be formed of material that is
deposited on the substrate 102. A bottom cap layer 106 may be formed
above the first insulating layer 104. For example, the bottom cap layer
106 may be formed of material that is deposited on the first insulating
layer 104. In a particular embodiment, the bottom cap layer 106 includes
silicon carbide (SiC) or silicon nitride (SiN, etc.). An MRAM area 108 of
a wafer is shown and a logic area 110 of the wafer is shown. The bottom
cap layer 106 may protect against the formation of recesses in the
insulating layers in the MRAM area 108 and in the logic area 110.

[0024] Referring to FIG. 2, a second illustrative diagram of at least one
stage in the process of fabricating a magnetic tunnel junction (MTJ)
device is depicted and generally designated 200. A first copper damascene
process may be performed to open bottom trenches 202, and bottom vias 204
in the first insulating layer 104, to plate or otherwise deposit copper
in the bottom trenches 202 and in the bottom vias 204, and to perform a
copper chemical mechanical planarization. For example, a logic process
may define placement of the copper in the bottom trench 202 and in the
bottom via 204 in the logic area 110. In an alternative embodiment,
another conductive metal besides copper may be used. The copper-filled
bottom trenches 202 each have a normal axis 220. The surface of each of
the copper-filled bottom trenches 202 forms a copper pad 230.

[0025] Referring to FIG. 3, a third illustrative diagram of at least one
stage in the process of fabricating a magnetic tunnel junction (MTJ)
device is depicted and generally designated 300. A bottom electrode 302
may be formed above the bottom cap layer 106 and above the copper in the
bottom trenches 202. For example, the bottom electrode 302 may be formed
of material that is deposited on the bottom cap layer 106 and on the
copper in the bottom trenches 202. In a particular embodiment, the bottom
electrode 302 includes at least one of tantalum and tantalum nitride.
Forming the bottom electrode 302 directly on the copper in the bottom
trenches 202 reduces a series resistance of a subsequently formed MTJ
device as compared to using a bottom via between the bottom electrode 302
and the copper in the bottom trenches 202.

[0026] Magnetic tunnel junction layers 304 may be formed above, the bottom
electrode 302. For example, the magnetic tunnel junction layers 304 may
be formed of materials that are deposited on the bottom electrode 302.
The bottom electrode 302 and the magnetic tunnel junction layers 304 may
temporarily seal and protect the copper in the bottom trenches 202. In a
particular embodiment, an easy axis magnetic tunnel junction magnetic
anneal of at least one of the magnetic tunnel junction layers 304 aligns
a magnetic field orientation of subsequently formed magnetic tunnel
junction structures 402, shown in FIG. 4. A hardmask 306 may be formed
above the magnetic tunnel junction layers 304. For example, the hardmask
306 may be formed of material that is deposited on the magnetic tunnel
junction layers 304, Photoresist 308 may be formed above the hardmask 306
and patterned to pattern the magnetic tunnel junction structures 402
shown in FIG. 4. For example, the photoresist 308 may be formed of
material that is deposited on the hardmask 306 and may be patterned by
photolithography techniques.

[0027] Referring to FIG. 4, a fourth illustrative diagram of at least one
stage in the process of fabricating a magnetic tunnel junction (MTJ)
device is depicted and generally designated 400. The magnetic tunnel
junction (MTJ) structures 402 may be formed above the bottom electrode
302 and also my be formed offset from the copper in the bottom trenches
202 to not overlap the copper in the bottom trenches 202. The magnetic
tunnel junction structures 402 may each have an MTJ axis 420 that is
offset from the normal axis 220 of an adjacent copper-filled bottom
trench 202 by an offset 430. The MTJ axis 420 is a structural axis and
may or may not coincide with an MTJ magnetization axis 422. For an
in-plane magnetization, the MTJ magnetization axis 422 may be
substantially horizontal and substantially parallel to a barrier layer
406, where the MTJ magnetization axis 422 can be parallel with the page,
as shown, or perpendicular to the page. For an out-of-plane magnetization
of a perpendicular MTJ (not shown), the MTJ magnetization axis 422 may be
substantially parallel to the MTJ axis 420. Forming the magnetic tunnel
junction structures 402 offset from the copper in the bottom trenches 202
and not overlapping the copper in the bottom trenches 202 may protect the
magnetic tunnel junction structures 402 from the impact of surface
roughness of the copper in the bottom trenches 202. In a particular
embodiment, the offset 430 of the MTJ axis 420 from the normal axis 220
is greater than a width of the magnetic tunnel junction structure 402.
The offset 430 may be selected to ensure that the magnetic tunnel
junction structure 402 is formed above the bottom cap layer 106 and does
not extend above the copper pad 230. The magnetic tunnel junction
structures 402 may include an antiferrimagnetic layer (AFM) (not shown),
a fixed layer 404, the barrier layer 406, a free layer 408, and an MTJ
cap layer (not shown).

[0028] A magnetic tunnel junction seal layer 410 may be formed above and
adjacent to the magnetic tunnel junction structures 402 and above the
bottom electrode 302. For example, the magnetic tunnel junction seal
layer 410 may be formed of material that is deposited on and adjacent to
the magnetic tunnel junction structures 402 and on the bottom electrode
302. In a particular embodiment, the magnetic tunnel junction seal layer
410 includes silicon nitride (SiN) or silicon carbide (SiC, etc.). A
second insulating layer 412 may be formed above the magnetic tunnel
junction seal layer 410. For example, the second insulating layer 412 may
be formed of material that is deposited above the magnetic tunnel
junction seal layer 410.

[0029] Referring to FIG. 5, a fifth illustrative diagram of at least one
stage in the process of fabricating a magnetic tunnel junction (MTJ)
device is depicted and generally designated 500. The second insulating
layer 412 may be planarized and tops 504 of the magnetic tunnel junction
structures 402 may be opened. A top electrode 502 may be formed above the
planarized second insulating layer 412 and above the tops 504 of the
magnetic tunnel junction structures 402. For example, the top electrode
502 may be formed of material that is deposited on the planarized second
insulating layer 412 and on the tops 504 of the magnetic tunnel junction
structures 402. In a particular embodiment, the top electrode 502
includes at least one of tantalum and tantalum nitride.

[0030] A hardmask and photoresist 506 may be formed above the top
electrode 502 and patterned to pattern the top electrode 502 and the
bottom electrode 302. For example, the hardmask and photoresist 506 may
be formed of materials that are deposited on the top electrode 502 and
may be patterned by photolithography techniques.

[0031] Referring to FIG, 6, a sixth illustrative diagram of at least one
stage in the process of fabricating a magnetic tunnel junction MU) device
is depicted and generally designated 600. The top electrode 502 and the
bottom electrode 302 may be patterned in accordance with the patterning
of the hardmask and photoresist 506 of FIG. 5. In the MRAM area 108, all
layers may have been removed down to the bottom cap layer 106 in those
areas not protected by the hardmask and photoresist 506 of FIG. 5. In the
logic area 110, all layers may have been removed down to the bottom cap
layer 106 and the copper in the bottom trench 202.

[0032] A logic cap layer 602 may be formed above the bottom cap layer 106,
the logic cap layer 602 adjacent to the magnetic tunnel junction seal
layer 410, adjacent to the second insulating layer 412, and above the
patterned top electrode 502. For example, the logic cap layer 602 may be
formed of material that is deposited on the bottom cap layer 106,
adjacent to the magnetic tunnel junction seal layer 410, adjacent to the
second insulating layer 412, and on the patterned top electrode 502. In
the MRAM area 108, the logic cap layer 602 may seal the magnetic tunnel
junction structures 402. In the logic area 110, the logic cap layer 602
may be formed above the bottom cap layer 106 and above the copper in the
bottom trench 202. For example, in the logic area 110, the logic cap
layer 602 may be formed of material that is deposited on the bottom cap
layer 106 and on the copper in the bottom trench 202. In the logic area
110, the logic cap layer 602 may seal the copper in the bottom trench
202. In a particular embodiment, the logic cap layer 602 includes silicon
carbide (SiC) or silicon nitride (SiN, etc.). A third insulating layer
604 may be formed and planarized above the logic cap layer 602. For
example, the third insulating layer 604 may be formed of material that is
deposited on the logic cap layer 602 and planarized.

[0033] Referring to FIG. 7, a seventh illustrative diagram of at least one
stage in the process of fabricating a magnetic tunnel junction (MTJ)
device is depicted and generally designated 700. A second copper
damascene process may be performed to open top trenches 702 in the third
insulating layer 604 and to open at least one of a top via 704 to the
patterned top electrode 502 and a logic via 706 to the copper in the
bottom trench 202, to plate or otherwise deposit copper in the top
trenches 702 and in the at least one of the top via 704 and the logic via
706, and to perform a copper chemical mechanical planarization. In a
particular embodiment, the top via 704 and the logic via 706 can be
formed together in a common process stage. Forming the top vias 704 and
the logic vias 706 together in a common process stage saves an extra
photolithography masking step as compared to forming the top vias 704 and
the logic vias 706 in separate process stages. In an alternative
embodiment, the top vias 704 may be opened selectively to the logic cap
layer 602 of the magnetic tunnel junction structures 402 independently of
the logic vias 706. In a particular embodiment, a final cap layer 708 may
be formed above the copper in the top trenches 702 and above the third
insulating layer 604. For example, the final cap layer 708 may be formed
of material that is deposited on the copper in the top trenches 702 and
on the third insulating layer 604.

[0034] An apparatus 710 may be formed that includes a structure 712 that
includes the bottom cap layer 106 surrounding a metal pad, such as the
copper pad 230. The apparatus 710 also includes a magnetic tunnel
junction (MTJ) device 714, the MTJ device 714 including the bottom
electrode 302 coupled to the structure 712, the MTJ device 714 including
the magnetic tunnel junction layers in the magnetic tunnel junction
structure 402, the top electrode 502, and the logic cap layer 602, where
the MTJ device 714 is offset with respect to the metal pad, such as the
copper pad 230. In a particular embodiment, the offset 430 defines a
distance in a direction parallel to a surface of the metal pad, such as
the surface of the copper pad 230, that is substantially parallel to and
farthest from the substrate 102. In a particular embodiment, the bottom
cap layer 106 is formed before the copper-filled bottom trenches 202 are
formed, The magnetic tunnel junction layers in the magnetic tunnel
junction structure 402 may not overlap the copper pad 230. in a
particular embodiment, the magnetic tunnel junction layers in the
magnetic tunnel junction structure 402 of the MTJ device 714 are not
directly above the copper pad 230.

[0035] Referring to FIG. 8, an eighth illustrative diagram of at least one
stage in the process of fabricating a magnetic tunnel junction (MTJ)
device is depicted and generally designated 800. In a particular
embodiment, the height of the top via 704 is adjustable. FIG. 7 and FIG.
8 show the top vias 704 having different heights that may be adjusted in
accordance with processing requirements and layer thicknesses. The
formation of the top vias 704, by etching, for example, stops at the
logic cap layer 602 of the magnetic tunnel junction structures 402.
Similarly, the formation of the logic vias 706, by etching, for example,
stops at the logic cap layer 602 on the copper in the bottom trench 202.
A metal trench etching will break through the logic cap layer 602 of the
top vias 704 and the logic vias 706. Then metal plating or deposition can
fill metal into the top vias 704, the logic vias 706, and the top
trenches 702. A metal chemical mechanical planarization (CMP) process
will remove extra metal film above the top trenches 702.

[0036]FIG. 9 is a flow diagram of a first illustrative embodiment 900 of
a method of forming a magnetic tunnel junction (MTJ) device. In the first
illustrative embodiment 900, the method includes forming a magnetic
tunnel junction (MTJ) device on a structure that includes a bottom cap
layer and a bottom metal-filled trench having a normal axis, the magnetic
tunnel junction device including a bottom electrode, magnetic tunnel
junction layers, a magnetic tunnel junction seal layer, atop electrode,
and a logic cap layer, the magnetic tunnel junction device having an MTJ
axis that is offset from the normal axis, at 902. In a particular
embodiment, the metal-filled bottom trench 202 is substantially filled
with copper. In a particular embodiment, the metal-filled bottom trench
202 forms the copper pad 230, where at least a portion of the bottom
electrode 302 is formed on the copper pad 230.

[0037] For example, the magnetic tunnel junction device 714 of FIG. 7 my
be formed on the structure 712 of FIG. 7 that includes the bottom cap
layer 106 of FIG. 1 and the bottom trench 202 of FIG. 2 filled with
copper that has the normal axis 220. The magnetic tunnel junction device
714 of FIG. 7 may include the bottom electrode 302 of FIG. 3, the
magnetic tunnel junction layers in the magnetic tunnel junction structure
402 of FIG, 4, the magnetic tunnel junction seal layer 410 of FIG. 4, the
top electrode 502 of FIG. 5, and the logic cap layer 602 of FIG. 6, The
magnetic tunnel junction device 714 of FIG. 7 may have the MTJ axis 420
that is offset from the normal axis 220 by the offset 430. In a
particular embodiment, the bottom cap layer 106 of FIG. 1 is formed
before the copper-filled bottom trench 202 of FIG, 2 is formed.

[0038] The method also includes forming and planarizing an insulating
layer above the logic cap layer, at 904. For example, the third
insulating layer 604 of FIG. 6 may be formed above the logic cap layer
602 of FIG. 6 and planarized.

[0039] The method further includes performing a copper damascene process
to open a top trench in the insulating layer, to open a top via to the
top electrode or a logic via to the metal in the bottom metal-filled
trench or to open the top via and the logic via, to deposit copper in the
top trench and in the top via or in the logic via or in the top via and
in the logic via, and to perform a copper chemical mechanical
planarization of the deposited copper, at 906. For example, the second
copper damascene process may be performed to open the top trenches 702 of
FIG. 7 in the third insulating layer 604 of FIG. 6, to open the top via
704 of FIG. 7 to the top electrode 502 of FIG. 5 or the logic via 706 of
FIG. 7 to the copper in the bottom trench 202 of FIG. 2 or to open the
top via 704 and the logic via 706, to plate copper in the top trench 702
and in the top via 704 or in the logic via 706 or in the top via 704 and
in the logic via 706, and to perform a copper chemical mechanical
planarization of the copper.

[0040]FIG. 10 is a flow diagram of a first portion 1000 of a second
illustrative embodiment of a method of forming a magnetic tunnel junction
(MTJ) device. In the first portion 1000 of the second illustrative
embodiment, the method includes forming a first insulating layer above a
substrate, at 1002. For example, the first insulating layer 104 of FIG. 1
may be formed above the substrate 102 of FIG. 1. The method also includes
forming a bottom cap layer above the first insulating layer, at 1004. For
example, the bottom cap layer 106 of FIG. 1 may be formed above the first
insulating layer 104 of FIG. 1.

[0041] The method further includes performing a first copper damascene
process to open bottom trenches and bottom vias in the first insulating
layer, to plate copper in the bottom trenches and in the bottom vias, and
to perform a copper chemical mechanical planarization (CMP), the
copper-filled bottom trenches each having a normal axis, at 1006. For
example, the first copper damascene process may be performed to open the
bottom metal trenches 202 of FIG. 2 and the bottom vias 204 of FIG. 2 in
the first insulating layer 104 of FIG. 1, to plate copper in the bottom
metal trenches 202 and in the bottom vias 204, and to perform a copper
chemical mechanical planarization, the copper-filled bottom trenches each
having the normal axis 220. The method also includes forming a bottom
electrode above the bottom cap layer and above the copper-filled bottom
trenches, at 1008, forming magnetic tunnel junction layers above the
bottom electrode, at 1010, forming a hardmask above the magnetic tunnel
junction layers, at 1012, and patterning magnetic tunnel junction (MTJ)
structures each having an MTJ axis that is offset from the normal axis of
an adjacent copper-filled bottom trench, at 1014. For example, the bottom
electrode 302 of FIG. 3 may be formed above the bottom cap layer 106 of
FIG. 1 and above the copper-filled bottom trench 202 of FIG. 2, the
magnetic tunnel junction layers 304 of FIG. 3 may be formed above the
bottom electrode 302 of FIG. 3, the hardmask 306 of FIG. 3 may be formed
above the magnetic tunnel junction layers 304, and the hardmask 306 and
the photoresist 308 of FIG. 3 may be used to pattern the magnetic tunnel
junction structures 402 of FIG. 4 to not overlap the copper-filled bottom
trenches 202. Each of the magnetic tunnel junction structures 402 may
have the MTJ axis 420 that is offset 430 from the normal axis 220 of an
adjacent copper-filled bottom trench 202.

[0042] The method further includes forming a magnetic tunnel junction seal
layer above and adjacent to the magnetic tunnel junction structures and
above the bottom electrode, at 1016. For example, the magnetic tunnel
junction seal layer 410 of FIG. 4 may be formed above and adjacent to the
magnetic tunnel junction structures 102 of FIG. 4 and above the bottom
electrode 302 of FIG. 3. The method also includes forming a second
insulating layer above the magnetic tunnel junction seal layer, at 1018.
For example, the second insulating layer 412 of FIG. 4 may be formed
above the magnetic tunnel junction seal layer 110 of FIG. 4.

[0043]FIG. 11 is a flow diagram of a second portion 1100 of the second
illustrative embodiment of a method of forming a magnetic tunnel junction
(MTJ) device. In the second portion 1100 of the second illustrative
embodiment, the method includes planarizing the second insulating layer
and opening tops of the magnetic tunnel junction structures, at 1102,
forming a top electrode above the planarized second insulating layer and
above the tops of the magnetic tunnel junction structures, at 1104, and
patterning the top electrode and the bottom electrode, at 1106. For
example, the second insulating layer 412 of FIG. 4 may be planarized,
opening the tops 504 of FIG. 5 of the magnetic tunnel junction structures
402 of FIG. 4, the top electrode 502 of FIG. 5 may be formed above the
planarized second insulating layer 412 of FIG. 4 and above the tops 504
of FIG. 5 of the magnetic tunnel junction structures 402 of FIG. 4, and
the hardmask and photoresist 506 of FIG. 5 may be patterned and used to
pattern the top electrode 502 of FIG. 5 and the bottom electrode 302 of
FIG. 3. The method further includes forming a logic cap layer above the
bottom cap layer, the logic cap layer adjacent to the magnetic tunnel
junction seal layer, adjacent to the second insulating layer, and above
the patterned top electrode, at 1108. For example, the logic cap layer
602 of FIG. 6 may be formed above the bottom cap layer 106 of FIG. 1,
adjacent to the magnetic tunnel junction seal layer 410 of FIG. 4,
adjacent to the second insulating layer 412 of FIG. 4, and above the
patterned top electrode 502 of FIG. 5.

[0044] The method also includes forming and planarizing a third insulating
layer above the logic cap layer, at 1110, and performing a second copper
damascene process to open at least one of a top via to the patterned top
electrode and a logic via to one of the copper-filled bottom trenches and
to open a top trench in the third insulating layer, to plate copper in
the top trench and in the at least one of the top via and the logic via,
and to perform a copper chemical mechanical planarization, at 1112. For
example, the third insulating layer 604 of FIG. 6 may be formed and
planarized above the logic cap layer 602 of FIG. 6, and the second copper
damascene process may be performed to open at least one of the top via
704 of FIG. 7 to the patterned top electrode 502 of FIG. 5 and the logic
via 706 of FIG. 7 to the copper-filled bottom trench 202 of FIG. 2 and to
open the top trenches 702 of FIG. 7 in the third insulating layer 604 of
FIG. 6, to plate copper in the top trenches 702 and in the at least one
of the top via 704 and the logic via 706, and to perform a copper
chemical mechanical planarization.

[0045]FIG. 12 is a block diagram of particular embodiment of a system
1200 including a module having MTJ structures with an offset MTJ axis and
a logic cap layer 1264. The system 1200 my be implemented in a portable
electronic device and includes a. processor 1210, such as a digital
signal processor (DSP), coupled to computer readable medium, such as a
memory 1232, storing computer readable instructions, such as software
1266. The system 1200 includes the module having MTJ structures with an
offset MTJ axis and a logic cap layer 1264. In an illustrative example,
the module having MTJ structures with an offset MTJ axis and a logic cap
layer 1264 includes the MTJ structure of FIG. 7, produced in accordance
with any of the embodiments of FIGS. 9-11, or any combination thereof.
The module having MTJ structures with an offset MTJ axis and a logic cap
layer 1264 may be in the processor 1210 or may be a separate device or
circuitry (not shown). In a particular embodiment, as shown in FIG. 12,
the module having MTJ structures with an offset MTJ axis and a logic cap
layer 1264 is accessible to the digital signal processor (DSP) 1210. In
another particular embodiment, the memory 1232 includes an STT-MRAM
memory array that includes the module having NITS structures with an
offset MTJ axis and a logic cap layer 1264.

[0046] A camera interface 1268 is coupled to the processor 1210 and also
coupled to a camera, such as a video camera 1270. A display controller
1226 is coupled to the processor 1210 and to a display device 1228. A
coder/decoder (CODEC) 1234 can also be coupled to the processor 1210. A
speaker 1236 and a microphone 1238 can be coupled to the CODEC 1234. A
wireless interface 1240 can be coupled to the processor 1210 and to a
wireless antenna 1242.

[0047] In a particular embodiment, the processor 1210, the display
controller 1226, the memory 1232, the CODEC 1234, the wireless interface
1240, and the camera interface 1268 are included in a system-in-package
or system-on-chip device 1222. In a particular embodiment, an input
device 1230 and a power supply 1244 are coupled to the system-on-chip
device 1222. Moreover, in a particular embodiment, as illustrated in FIG.
12, the display device 1228, the input device 1230, the speaker 1236, the
microphone 1238, the wireless antenna 1242, the video camera 1270, and
the power supply 1244 are external to the system-on-chip device 1222.
However, each of the display device 1228, the input device 1230, the
speaker 1236, the microphone 1238, the wireless antenna 1242, the video
camera 1270, and the power supply 1244 can be coupled to a component of
the system-on-chip device 1222, such as an interface or a controller.

[0048] The foregoing disclosed devices and functionalities (such as the
device of FIG. 7, the methods of FIG. 9, FIG. 10, or FIG. 11, or any
combination thereof) may be designed and configured into computer files
(e.g., RTL, GDSII, GERBER, etc.) stored on computer readable media. Some
or all such files may be provided to fabrication handlers who fabricate
devices based on such files. Resulting products include semiconductor
wafers that are then cut into semiconductor die and packaged into a
semiconductor chip. The semiconductor chips are then employed in
electronic devices. FIG. 13 depicts a particular illustrative embodiment
of an electronic device manufacturing process 1300.

[0049] Physical device information 1302 is received in the manufacturing
process 1300, such as at a research computer 1306. The physical device
information 1302 may include design information representing at least one
physical property of a semiconductor device, such as the MTJ device 714
of FIG. 7. For example, the physical device information 1302 may include
physical parameters, material characteristics, and structure information
that is entered via a user interface 1304 coupled to the research
computer 1306. The research computer 1306 includes a processor 1308, such
as one or more processing cores, coupled to a computer readable medium
such as a memory 1310. The memory 1310 may store computer readable
instructions that are executable to cause the processor 1308 to transform
the physical device information 1302 to comply with a file format and to
generate a library file 1312.

[0050] In a particular embodiment, the library file 1312 includes at least
one data file including the transformed design information. For example,
the library file 1312 may include a library of semiconductor devices
including the MTJ device 714 of FIG. 7, that is provided for use with an
electronic design automation (EDA) tool 1320.

[0051] The library file 1312 may be used in conjunction with the FDA tool
1320 at a design computer 1314 including a processor 1316, such as one or
more processing cores, coupled to a memory 1318. The EDA tool 1320 may be
stored as processor executable instructions at the memory 1318 to enable
a user of the design computer 1314 to design a circuit using the MTJ
device 714 of FIG. 7, of the library file 1312. For example, a user of
the design computer 1314 may enter circuit design information 1322 via a
user interface 1324 coupled to the design computer 1314. The circuit
design information 1322 may include design information representing at
least one physical property of a semiconductor device, such as the MTJ
device 714 of FIG. 7. To illustrate, the circuit design property may
include identification of particular circuits and relationships to other
elements in a circuit design, positioning information, feature size
information, interconnection information, or other information
representing a physical property of a semiconductor device.

[0052] The design computer 1314 may be configured to transform the design
information, including the circuit design information 1322, to comply
with a file format. To illustrate, the file formation may include a
database binary file format representing planar geometric shapes, text
labels, and other information about a circuit layout in a hierarchical
format, such as a Graphic Data System (GDSII) file format. The design
computer 1314 may be configured to generate a data file including the
transformed design information, such as a GDSII file 1326 that includes
information describing the MTJ device 714 of FIG. 7, in addition to other
circuits or information. To illustrate, the data file may include
information corresponding to a system-on-chip (SOC) that includes the MTJ
device 714 of FIG, 7 and that also includes additional electronic
circuits and components within the SOC.

[0053] The GDSII file 1326 may be received at a fabrication process 1328
to manufacture the MTJ device 714 of FIG. 7, according to transformed
information in the GDSII file 1326. For example, a device manufacture
process may include providing the GDSII file 1326 to a mask manufacturer
1330 to create one or more masks, such as masks to be used for
photolithography processing, illustrated as a representative mask 1332.
The mask 1332 may be used during the fabrication process to generate one
or more wafers 1334, which may be tested and separated into dies, such as
a representative die 1336. The die 1336 includes a circuit including the
MTJ device 714 of FIG. 7.

[0054] To illustrate, the fabrication process 1328 may include at least
one computer that incorporates a processor executing instructions stored
at a computer readable tangible storage medium, such as a memory device,
to perform the method of FIG. 9 or the method of FIGS. 10-11. The
computer may be coupled to one or more semiconductor fabrication devices
and configured to execute instructions to initiate formation of a
magnetic tunnel junction (MTJ) device on a structure that includes a
bottom cap layer and a bottom metal-filled trench having a normal axis.
The magnetic tunnel junction device includes a bottom electrode, magnetic
tunnel junction layers, a magnetic tunnel junction seal layer, a top
electrode, and a logic cap layer. The magnetic tunnel junction device has
an MTJ axis that is offset from the normal axis. The computer may also be
configured to execute instructions stored at the computer readable medium
to initiate formation and planarization of an insulating layer above the
logic cap layer. The computer may also be configured to execute
instructions stored at the computer readable medium to initiate a copper
damascene process to open a top trench in the insulating layer, to open a
top via to the top electrode, to open a logic via to metal in the bottom
metal-filled trench, or to open the top via and the logic via, to deposit
copper in the top trench and in the top via, in the logic via, or in the
top via and in the logic via, and to perform a copper chemical mechanical
planarization of the deposited copper.

[0055] The die 1336 may be provided to a packaging process 1338 where the
die 1336 is incorporated into a representative package 1340. For example,
the package 1340 may include the single die 1336 or multiple dies, such
as a system-in-package (SiP) arrangement. The package 1340 may be
configured to conform to one or more standards or specifications, such as
Joint Electron Device Engineering Council (JEDEC) standards.

[0056] Information regarding the package 1340 may be distributed to
various product designers, such as via a component library stored at a
computer 1346. The computer 1346 may include a processor 1348, such as
one or more processing cores, coupled to a memory 1350. A printed circuit
board (PCB) tool may be stored as processor executable instructions at
the memory 1350 to process PCB design information 1342 received from a
user of the computer 1346 via a user interface 1344. The PCB design
information 1342 may include physical positioning information of a
packaged semiconductor device on a circuit board, the packaged
semiconductor device corresponding to the package 1340 including the MTJ
device 714 of FIG. 7.

[0057] The computer 1346 may be configured to transform the PCB design
information 1342 to generate a data file, such as a GERBER file 1352 with
data that includes physical positioning information of a packaged
semiconductor device on a circuit board, as well as layout of electrical
connections such as traces and vias, where the packaged semiconductor
device corresponds to the package 1340 including the NITS device 714 of
FIG. 7. In other embodiments, the data file generated by the transformed
PCB design information may have a format other than a GERBER format.

[0058] The GERBER file 1352 may be received at a board assembly process
1354 and used to create PCBs, such as a representative PCB 1356,
manufactured in accordance with the design information stored within the
GERBER file 1352. For example, the GERBER file 1352 may be uploaded to
one or more machines for performing various steps of a PCB production
process. The PCB 1356 may be populated with electronic components
including the package 1340 to form a representative printed circuit
assembly (PCA) 1358.

[0059] The PCA 1358 may be received at a product manufacture process 1360
and integrated into one or more electronic devices, such as a first
representative electronic device 1362 and a second representative
electronic device 1364. As an illustrative, non-limiting example, the
first representative electronic device 1362, the second representative
electronic device 1364, or both, may be selected from the group of a set
top box, a music player, a video player, an entertainment unit, a
navigation device, a communications device, a personal digital assistant
(PDA), a fixed location data unit, and a computer. As another
illustrative, non-limiting example, one or more of the electronic devices
1362 and 1364 may be remote units such as mobile phones, hand-held
personal communication systems (PCS) units, portable data units such as
personal data assistants, global positioning system (GPS) enabled
devices, navigation devices, fixed location data units such as meter
reading equipment, or any other device that stores or retrieves data or
computer instructions, or any combination thereof. Although FIG. 13
illustrates remote units according to teachings of the disclosure, the
disclosure is not limited to these exemplary illustrated units.
Embodiments of the disclosure may be suitably employed in any device
which includes active integrated circuitry including memory and on-chip
circuitry.

[0060] Thus, the MTJ device 714 of FIG. 7, may be fabricated, processed,
and incorporated into an electronic device, as described in the
illustrative process 1300. One or more aspects of the embodiments
disclosed with respect to FIGS. 1-11 may be included at various
processing stages, such as within the library file 1312, the GDSII file
1326, and the GERBER file 1352, as well as stored at the memory 1310 of
the research computer 1306, the memory 1318 of the design computer 1314,
the memory 1350 of the computer 1346, the memory of one or more other
computers or processors (not shown) used at the various stages, such as
at the board assembly process 1354, and also incorporated into one or
more other physical embodiments such as the mask 1332, the die 1336, the
package 1340, the PCA 1358, other products such as prototype circuits or
devices (not shown), or any combination thereof. For example, the GDSII
file 1326 or the fabrication process 1328 can include a computer readable
tangible medium storing instructions executable by a computer, the
instructions including instructions that are executable by the computer
to initiate formation of the MTJ device 714 of FIG. 7. Although various
representative stages of production from a physical device design to a
final product are depicted, in other embodiments fewer stages may be used
or additional stages may be included. Similarly, the process 1300 may be
performed by a single entity, or by one or more entities performing
various stages of the process 1300.

[0061] Those of skill would further appreciate that the various
illustrative logical blocks, configurations, modules, circuits, and
method steps described in connection with the embodiments disclosed
herein may be implemented as electronic hardware, computer software
executed by a processing unit, or combinations of both. Various
illustrative components, blocks, configurations, modules, circuits, and
steps have been described above generally in terms of their
functionality. Whether such functionality is implemented as hardware or
executable processing instructions depends upon the particular
application and design constraints imposed on the overall system. Skilled
artisans may implement the described functionality in varying ways for
each particular application, but such implementation decisions should not
be interpreted as causing a departure from the scope of the present
disclosure.

[0062] The steps of a method or algorithm described in connection with the
embodiments disclosed herein may be embodied directly in hardware, in a
software module executed by a processor, or in a combination of the two.
A software module may reside in random access memory (RAM), a
magnetoresistive random access memory (MRAM), a spin-torque-transfer
magnetoresistive random access memory (STT-MRAM), flash memory, read-only
memory (RAM), programmable read-only memory (PROM), erasable programmable
read-only memory (EPROM), electrically erasable programmable read-only
memory (EEPROM), registers, hard disk, a removable disk, a compact disc
read-only memory (CD-ROM), or any other form of storage medium known in
the art. An exemplary storage medium is coupled to the processor such
that the processor can read information from, and write information to,
the storage medium. In the alternative, the storage medium may be
integral to the processor. The processor and the storage medium may
reside in an application-specific integrated circuit (ASIC). The ASIC may
reside in a computing device or a user terminal, In the alternative, the
processor and the storage medium may reside as discrete components in a
computing device or user terminal.

[0063] The previous description of the disclosed embodiments is provided
to enable any person skilled in the art to make or use the disclosed
embodiments. Various modifications to these embodiments will be readily
apparent to those skilled in the art, and the principles defined herein
may be applied to other embodiments without departing from the scope of
the disclosure. Thus, the present disclosure is not intended to be
limited to the embodiments shown herein but is to be accorded the widest
scope possible consistent with the principles and novel features as
defined by the following claims.