Abstract

The lasing transition in bulk Zn‐doped GaAs has been resolved into three components (A′, B′, C′) with energies at 1.504, 1.489, and 1.484 eV, respectively. The higher energy levels are depopulated at low temperatures. The temperature dependence of the intensity of the transitions indicates a single luminescent center with a ground state and three excited states. A group‐theoretical analysis based on the Td symmetry of the Zn acceptor with s1/2conduction bandelectrons and p3/2valence band holes leads to the conclusion that the luminescent center must have lower symmetry than Td. The various possible types of centers are mentioned but there are no a priori reasons for choosing one over the other at the present time.