Abstract

Naphthalene tetracaboxylic dianhydride (NTCDA) shows strong chemical interaction with metal atoms in an indium tin oxide (ITO) substrate to form charge transfer(CT) complexes. The CT complex at the ITO/NTCDA interface can lower the energy barrier height for hole injection from ITO into the hole transporting layer of ,-diphenyl-, -bis(1-naphthyl)(-biphenyl)- diamine (NPB). The operational voltage of an emissive device at a current density of was significantly reduced from 12.2 to 9.2 V by simply inserting a thin layer of NTCDA between the ITO and NPB. The results enable the achievement of organic light-emitting diodes that consume relatively less power.

Abstract

Naphthalene tetracaboxylic dianhydride (NTCDA) shows strong chemical interaction with metal atoms in an indium tin oxide (ITO) substrate to form charge transfer(CT) complexes. The CT complex at the ITO/NTCDA interface can lower the energy barrier height for hole injection from ITO into the hole transporting layer of ,-diphenyl-, -bis(1-naphthyl)(-biphenyl)- diamine (NPB). The operational voltage of an emissive device at a current density of was significantly reduced from 12.2 to 9.2 V by simply inserting a thin layer of NTCDA between the ITO and NPB. The results enable the achievement of organic light-emitting diodes that consume relatively less power.