An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations.… (More)

A multistacked varactor is presented for ultra-linear tunable radio frequency applications. The varactor elements are applied in anti-series configuration and are characterized by an “exponential”… (More)

In this paper, the reverse biasing and breakdown properties of the PureB diodes are investigated for different methods of processing the PureB anode window and the metal contacting. In particular,… (More)

The properties of nanometer-thin pure boron layers deposited by chemical vapor deposition were investigated for use as a barrier against tetramethyl ammonium hydroxide (TMAH) and potassium hydroxide… (More)