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This is clearly higher than the 1. This allowed to drive the modulator in the linear regime for multi-level PAM signaling but sacrificed modulation depth. Moreover, SOH devices exploit the intrinsic scalability advantages associated with large-scale silicon photonic fabrication based on highly developed CMOS processes, potentially in combination with electrical circuits 62 , In general, the performance of these devices is fundamentally limited by an intrinsic trade-off between energy consumption and insertion loss 19 , leading to relatively large drive voltages of 6 V pp 38 and 4 V pp 18 , respectively.

In addition, fabrication of POH devices has so far relied on advanced electron-beam lithography, which is not readily amenable to large-scale low-cost production. Note that the EAM listed in Fig. Moreover, Fig. SOH devices can hence compare very well to competing device concepts, both in terms of performance and in terms of device scalability. The record-low drive voltage of 1. In the future, such devices might be co-integrated with light sources in compact chip-scale assemblies.

This can be accomplished by hybrid integration approaches that rely, e. Recent advances in material synthesis and molecular design have led to efficient and thermally stable organic EO materials. We expect that even higher operating temperatures can be achieved in the future, e. In addition to temperature, photo-oxidation might play an important role in the degradation of EO organic materials — this aspect is subject to ongoing research, and we expect that the associated life-time limitations can also be overcome by cross-linking, which reduces oxygen diffusion into the material 71 , 72 , or by encapsulation of the devices.

We confirm our experimental results by simulations using the measured frequency characteristic of our SOH modulator and its associated drive circuitry. In the experiments, we achieve BER below the threshold for hard-decision forward error correction. Post-equalization helps in improving the eye opening so that low-power and low-latency FEC codes can be employed. The efficiency of our modulator and the possibility to exploit large-scale silicon photonic integration allows the realization of compact and technically simple high-speed transceivers that meet the stringent cost targets of medium-reach interconnects.

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The manuscript was prepared by S. Correspondence to Christian Koos. Publisher's note: Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Reprints and Permissions. Optics Express Nature Photonics Journal of Semiconductors By submitting a comment you agree to abide by our Terms and Community Guidelines.

If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate. Advanced search. Skip to main content. Subjects Optical materials and structures Other photonics. Abstract Electro-optic modulators for high-speed on-off keying OOK are key components of short- and medium-reach interconnects in data-center networks.