High power, 44W RF silicon switch; low loss of 0.6 dB

May 17, 2016 //
By Graham Prophet

Analog Devices’ high power (44W peak) single-pole, double-throw (SPDT) silicon switch is designed to reduce hardware size and bias power consumption in cellular radio systems. The ADRF5130 switch employs a high level of integration that eliminates the need for external components.

The ADRF5130 is specified at 0.7-GHz to 3.5-GHz frequency band with typical 0.6-dB insertion-loss, isolation of 50 dB, linearity of +68 dBm and peak power handling of 44W during continuous operation mode. The device features 2 kV ESD protection on all device pins. It also incorporates a fast CMOS-compatible control interface with switching time less than 1 µsec. A symmetrical circuit architecture allows the RF inputs to be used interchangeably in high power applications.

The switch also reduces power consumption to more efficient levels by operating on a single low-voltage supply with extremely low current consumption compared to existing pin-diode-based solutions. The ADRF5130 is an all-silicon device, and is housed in a 4 × 4 mm LFCSP SMT package, and priced at $10.04 (1000).