Abstract

We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to .

Received 14 September 2010Accepted 19 November 2010Published online 15 December 2010

Acknowledgments:

The authors gratefully acknowledge financial support by Deutsche Forschungsgemeinschaft in the framework of Sonderforschungsbereich 762 “Functionality of Oxide Interfaces” and the Graduate School “Leipzig School of Natural Sciences-BuildMoNa.” The authors also thank the European Research Council for the ERC 2008 Advanced Grant, also PTDC/CTM/73943/2006 and PTDC/EEA-ELC/64975/2006 by the Portuguese Science Foundation (FCT-MCTES). A.L. is thankful to the Studienstiftung des deutschen Volkes.