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PWD13F60

The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.

The integrated power MOSFETs have low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.

The PWD13F60 device accepts a supply voltage (VCC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage.

质量和可靠性

型号

Marketing Status

Package

Grade

RoHS Compliance Grade

Material Declaration**

PWD13F60TR

Active

QFN 10X13

Industrial

Ecopack2

PWD13F60

Active

QFN 10X13

Industrial

Ecopack2

test

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support
for information on specific devices.