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H—ELECTRICITY

H01—BASIC ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof

H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture

H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices

H01L51/0508—Field-effect devices, e.g. TFTs

H—ELECTRICITY

H01—BASIC ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof

H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof

H01L51/0002—Deposition of organic semiconductor materials on a substrate

Dafür geeignete Lacke sind allesamt kommerziell erhältlich und die Methoden, sie z. For this, appropriate paints are all commercially available and the methods they z.B. durch Belichten zu strukturieren, sind literaturbekannt. to structure, by exposure, are known from the literature.

Man kann im Mehrschichtaufbau eines OFETs eine oder mehrere Schichten mit der Rakel-Methode herstellen. One can prepare one or more layers with the doctor blade method in the multi-layer structure of an OFET.Bei mehreren Schichten wird die Photolacktechnik zur Bildung der Negativ- Form bevorzugt, weil z. In case of several layers, the photoresist technique is used to form the negative preferred form because z.B. das Imprintverfahren die Form schicht nicht über die ganze Schichtdicke durchstrukturiert, sondern in den Vertiefungen einen bestimmten Boden stecken lässt, der den elektrischen Kontakt zu der darunter liegenden Schicht verhindert. B. the Imprintverfahren the form of non-layer over the entire layer thickness by structured, but can insert a particular floor in the recesses which prevents the electrical contact to the underlying layer.Für die erste Schicht, z. For the first layer, z.B. Source-Drain- Elektroden, spielt das keine Rolle, aber für alle weiteren Schichten. As source-drain electrodes, that does not matter, but for all other layers.

Nach einer bevorzugten Ausführungsform des Verfahrens wird es kontinuierlich betrieben, das heisst ein Band mit der Form schicht wird nacheinander an verschiedenen Stationen vorbei geführt wo zuerst über z. According to a preferred embodiment of the process is operated continuously, that a band is called the mold layer is performed successively at different stations passing first over where z.B. Belichtung mit einer Maske Ver tiefungen in der Formschicht gebildet werden, die dann im weiteren Verlauf zumindest einmal mit Funktionspolymer über eine Rakelstation gefüllt werden. B. exposure with a mask Ver depressions are formed, which are then filled in the further course, at least once with a functional polymer doctor blade station in the form of layer.

b) diese Formschicht erhält Vertiefungen, die den Negativen der späteren Strukturen entsprechen und b) this layer is given the form of recesses that correspond to the negatives of the subsequent structures and

9. Verfahren nach einem der Ansprüche 5 bis 8, bei dem die Vertiefungen in der Formschicht durch Bestrahlung mit einer Maske erzeugt werden. 9. The method according to any one of claims 5 to 8, wherein the recesses are produced in the forming layer by irradiation with a mask.

10. Verfahren nach einem der Ansprüche 5 bis 9, das als kon tiniuerliches Verfahren mit einem durchlaufenden Band durch geführt wird. 10. The method according to any one of claims 5 to 9, which is managed as a kon tiniuerliches method with a continuous band through.

DE20001432042000-09-012000-09-01 An organic field-effect transistor, method for structuring an OFET and an integrated circuit WithdrawnDE10043204A1
(en)

Imprint-lithographic process for manufacturing e.g. MOSFET, involves structuring polymerized gate dielectric layer by imprint stamp that is used to form hole on layer, and etching base of hole till preset thickness of layer is reached

Organic field effect transistors (OFET), a method of manufacturing the organic field effect transistor, an integrated circuit formed from the organic field effect transistor, and the use of the integrated circuit

Imprint-lithographic process for manufacturing e.g. MOSFET, involves structuring polymerized gate dielectric layer by imprint stamp that is used to form hole on layer, and etching base of hole till preset thickness of layer is reached