Random networks of carbon nanotubes as an electronic material

AUTHOR(S)

Snow, E. S.; Novak, J. P.; Campbell, P. M.; Park, D.

PUB. DATE

March 2003

SOURCE

Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2145

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

We report on the transport properties of random networks of single-wall carbon nanotubes fabricated into thin-film transistors. At low nanotube densities (âˆ¼1 Î¼m[SUP-2]) the networks are electrically continuous and behave like a p-type semiconductor with a field-effect mobility of âˆ¼10 cm[SUP2]/V s and a transistor on-to-off ratio âˆ¼10[SUP5]. At higher densities (âˆ¼10 Î¼m[SUP-2]) the field-effect mobility can exceed 100 cm[SUP2]/V s; however, in this case the network behaves like a narrow band gap semiconductor with a high off-state current. The fact that useful device properties are achieved without precision assembly of the nanotubes suggests the random carbon nanotube networks may be a viable material for thin-film transistor applications.

ACCESSION #

9377407

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