Abstract

The morphology and atomic structure of and surfaces, i.e., the surfaces found in the triangular channels of porous 4H–SiC, have been investigated using atomic force microscopy,low-energy electron diffraction(LEED), and Auger electron spectroscopy(AES). After hydrogen etching, the surfaces show steps parallel and perpendicular to the axis, yet drastically different morphologies for the two isomorphic orientations. Both surfaces immediately display a sharp LEEDpattern. Together with the presence of oxygen in the AES spectra, this indicates the development of an ordered oxide. Both surfaces show an oxygen-free well-ordered surface after Si deposition and annealing.

Received 22 August 2005Accepted 22 November 2005Published online 20 January 2006

Acknowledgments:

The authors would like to thank Y. Shishkin for the orientation and polishing of the samples used in this study. S. P. Rao performed initial hydrogen etching runs for the preparation of the samples. The authors also acknowledge partial support from the DURINT program (No. N00014-01-1-0715).