We report deposition of Cu-In-Ga-Se precursors by one-step sputtering of a single quaternary Cu(In,Ga)Se2 (CIGS) chalcogenide target at room temperature, followed by post selenization using Se pellets. The precursor films exhibit a chalcopyrite structure with a preferential orientation in the (112) direction. A solar cell with an efficiency of 7.95% has been fabricated using the post-selenized CIGS film, and an alternative, large scale and controlled process to fabricate CIGS absorber layers with quite good photovoltaic performance has been demonstrated.

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