The memristor is the fourth fundamental passive
circuit element, whereby it can remember the resistance based on
the last applied voltage. Hence, the name “memory resistor”.
Three memristor window functions introduced prior to this paper
were taken into discussion where the memristor is inserted into the
memristor-based RO-PUF. This was done in order to investigate
the effect of having different memristor window functions on the
RO-PUF performance in terms of uniqueness, uniformity, and bitaliasing.
While the RO-PUF produces satisfactory results
individually, the effect of using different memristor window
functions on the RO-PUF performance is not significant. There
was little effect because the memristor linearity becomes more
prominent with increasing frequency. With that, the memristor
acted like a resistor at the high operating frequency of the ROPUF.
Nevertheless, the randomized parameter of initial resistance
provided the RO-PUF improved performance. Thus, the RO-PUF
performed as expected and is stable regardless of the memristor
window function used.

en_US

dc.language.iso

en

en_US

dc.subject

Memristor

en_US

dc.subject

Physically Unclonable Function (RO-PUF)

en_US

dc.title

Effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf

en_US

dc.type

Conference Proceeding

en_US

dc.relation.conference

2016 International Conference on Advances in Electrical, Electronic and System Engineering (ICAEESE 2016)