TECHNICAL PUBLICATIONS:

4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors

Two pulse-generator circuits designed for writing non-volatile ferroelectric memory are fabricated by an all-additive inkjet process. One circuit is modeled on a traditional complementary design, while the second is based on a design methodology tailored for organic thin-film transistors through reduced device count and the use of a single device polarity. Both circuits are shown to successfully generate pulses that write the memory with a minimum voltage of 16 V.