G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means

G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms

G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means

G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms

G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance

G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm

H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T29/00—Metal working

Y10T29/49—Method of mechanical manufacture

Y10T29/49002—Electrical device making

Y10T29/49082—Resistor making

Y10T29/49103—Strain gauge making

Abstract

The invention provides a method of forming a sealed diaphragm (3) on a substrate (1) which comprises providing on the substrate (1) a sacrificial layer (2) , providing a diaphragm layer (3) over the sacrificial layer (2), providing at least one aperture (5) in the diaphragm layer (3) which is spaced from the periphery of the diaphragm layer (3), at least partially removing the sacrificial layer (2) from between the substrate (1) and the diaphragm layer (3) by way of the at least one aperture (5) and closing the at least one aperture (5).

Cited By (2)

Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed and methods for fabricating same

Cited By (7)

Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed and methods for fabricating same

Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same

Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed, and methods for fabricating same