Abstract

This abstract describes MEMS thermally actuated millimeter wave switches. The switches are constructed using a stress controlled dielectric membrane, with patterned metallic contacts. The resulting switches can be operated at low voltage, without sacrificing the spring constant. The structure allows to build resistive switches up to millimeter wave. Full wave simulations were performed using FEM and MoM codes, and agree well with measurements. A wafer scale packaging technique has been developed to protect the components during the dicing stage, and for long term durability. The measured isolation are better than 35 dB between 30 and 40 GHz.

Abstract

This abstract describes MEMS thermally actuated millimeter wave switches. The switches are constructed using a stress controlled dielectric membrane, with patterned metallic contacts. The resulting switches can be operated at low voltage, without sacrificing the spring constant. The structure allows to build resistive switches up to millimeter wave. Full wave simulations were performed using FEM and MoM codes, and agree well with measurements. A wafer scale packaging technique has been developed to protect the components during the dicing stage, and for long term durability. The measured isolation are better than 35 dB between 30 and 40 GHz.