105222017-09-18Graphene-GaN Schottky PhotodiodesCompletedOct 2011Sep 2013<p>Graphene-GaN Schottky Photodiodes is the development of the world's first graphene-based GaN Schottky device that has the potential to achieve a much greater total quantum efficiency in UV. The objective of this project is to characterize the Schottky barrier height for graphene and the total quantum efficiency (QE) of the graphene-GaN Schottky diodes.<p/><p>Integration of graphene as the top metal on GaN Schottky. This will replace platinum, which is 50% transparent at the desired wavelength, with graphene, which has higher mobility and much higher transparency (>90%). Develop a fabrication process for GaN Schottky and a chemical vapor deposition process for large area graphene. Develop a process to cleanly integrate single or multilayer graphene on GaN devices and pattern them. Develop a characterization scheme to determine the Schottky barrier height of graphene and device QE.</p><p>N/A</p>111325012Materials, Structures, Mechanical Systems and Manufacturing341412.1Materials32468Science Instruments, Observatories, and Sensor SystemsCenter Innovation Fund: GSFC CIFSpace Technology Mission DirectorateGoddard Space Flight CenterGSFCNASA CenterGreenbeltMDMarylandTherese GriebelTheodore D SwansonMahmooda SultanaShahid AslamGeorge ManosMary Lihttp://sciences.gsfc.nasa.gov/sed/72451.jpgImageProject Image 236 CC CIF * Graphene-GaN Schottky Photodiodes1276https://techport.nasa.gov/file/1276174242183NTR 1Link