射频功率晶体管 - 硅基氮化镓 (GaN on Si) - 连续波 (CW)

MACOM公司是全球唯一在射频领域采用硅基氮化镓（GaN on Si）技术的供应商。我们采用硅基氮化镓（GaN on Si）技术以分立器件和模块的形式提供广泛的连续波（CW）射频功率晶体管产品，支持频率从DC到6GHz。我们的搞功率连续波和线性晶体管完美匹配民用航空、通讯、网络、长脉冲雷达、工业、科研、以及医疗领域。我们的产品线借助于MACOM六十多年的技术传承，运用硅基氮化镓（GaN on Si）技术，提供标准和定制化的解决方案以满足客户最严苛的需求。我们的硅基氮化镓产品（可用作分立晶体管和集成放大器）采用0.5微米HEMT工艺，宽带应用下，在功率、增益、增益平稳度、效率、健壮性方面展现出了卓越的射频性能。

Optimized for Broadband Operation from DC-4000MHz
High Efficiency from 14 - 28V
10-20W P3dB CW Power from 30-1000MHz in application board with >50% drain efficiency
16-20W P3dB CW Power from 1000-2500MHz in application board with >45% drain efficiency
25W P3dB CW Power at 3000MHz
4.0 °C/W RTH with Maximum TJ Rating of 200 °C
Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 °C flange
Subject to EAR99 Export Control

Optimized for Broadband Operation from DC – 2000MHz
100W P3dB CW Power at 900MHz
60-95 W PSAT CW Power from 500-1000MHz in broadband application design
High efficiency from 14 - 28V
1.4 °C/W RTH with Maximum TJ Rating of 200°C
Robust up to 10:1 VSWR Mismatch at all Phase Angles with No Damage to the Device
Subject to EAR99 Export Control