Abstract

1, 3, and 5 wt.% silver-doped ZnO (SZO) nanowires (NWs) are grown by hot-walled pulsed
laser deposition. After silver-doping process, SZO NWs show some change behaviors,
including structural, electrical, and optical properties. In case of structural property,
the primary growth plane of SZO NWs is switched from (002) to (103) plane, and the
electrical properties of SZO NWs are variously measured to be about 4.26 × 106, 1.34 × 106, and 3.04 × 105 Ω for 1, 3, and 5 SZO NWs, respectively. In other words, the electrical properties
of SZO NWs depend on different Ag ratios resulting in controlling the carrier concentration.
Finally, the optical properties of SZO NWs are investigated to confirm p-type semiconductor by observing the exciton bound to a neutral acceptor (A0X). Also, Ag presence in ZnO NWs is directly detected by both X-ray photoelectron
spectroscopy and energy dispersive spectroscopy. These results imply that Ag doping
facilitates the possibility of changing the properties in ZnO NWs by the atomic substitution
of Ag with Zn in the lattice.