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Abstract

The major component of the throat height tolerance of the inductive write element (in a side-by-side configuration with a Magneto-Resistive (MR) read element) tolerance budget is eliminated by self-aligning the positions of the write head's zero throat and the read head's stripe in a single masking step using standard semiconductor wafer processing techniques.

Country

United States

Language

English (United States)

This text was extracted from an ASCII text file.

This is the abbreviated version, containing approximately
89% of the total text.

Self-Aligned Write Throat/Read Stripe for Side-by-Side
Head

The major
component of the throat height tolerance of the
inductive write element (in a side-by-side configuration with a
Magneto-Resistive (MR) read element) tolerance budget is eliminated
by self-aligning the positions of the write head's zero throat and
the read head's stripe in a single
masking step using standard
semiconductor wafer processing
techniques.

After
deposition of the read head's first shield layer, a
material X (e.g., SiO(2) or another material which is etchable with
high selectivity over Al(2)O(3) and MR sensor metallurgy) is
deposited. A noncritical (block)
photolithography patterning step
(which can be done by either liftoff or
subtractive etching) leaves
material X where the write head is to be built but not where the read
head is to be built.

The first
read gap and MR sensor are deposited and patterned in
the usual way and then removed from the write head area by etching.
When the read head's sensor stripe height is defined, the same mask
also exposes the area of the write head behind its zero-throat to a
subsequent deposition of material such as Al(2)O(3)to act as a mask
for the next step: after the resist stencil is lifted off, the
material X which is NOT protected by the just-deposited Al(2)O(3)
mask (i.e., the throat height of the write head) is etched by any
method offering high etching selectivity of material X over Al(2)O(3)
(e.g., CF(4) RIE). A...