Abstract

Schottky barrier height tuning is reported from the insertion of thin layers of AlOx and SiO2 at the interface between tantalum nitride and p-type silicon. The magnitude of the change in the barrier height is found to be dependent on the conditions of AlOx and SiO2 formation. The largest change in barrier height is over 350 meV and correlates well with the intrinsic dipole found at this interface. These findings are then interpreted using a model of the dipole formation at the high-κ and SiO2 interface. The application of these findings for low resistance contacts as well as options to achieve greater performance are discussed.

Received 24 May 2011Accepted 12 August 2011Published online 09 September 2011

Acknowledgments:

This work was partially supported by an international US-Korea research collaboration funded by MKE. Advanced Materials Research Center, AMRC, International SEMATECH Manufacturing Initiative, and ISMI are service marks of SEMATECH, Inc. SEMATECH and the SEMATECH logo are registered service marks of SEMATECH, Inc. All other service marks and trademarks are the property of their respective owners.