Semiconductor And Solar Wafers And Method For Processing Same - A method for manufacturing a silicon-on-insulator structure including a substrate wafer, an active wafer, and an oxide layer between the substrate wafer and the active wafer. The method includes the steps of heat treating the structure, trapezoid grinding edges of the wafer, and grinding a surface of the wafer.

2012-02-02

20120028440

METHOD OF FABRICATING A MULTILAYER STRUCTURE WITH CIRCUIT LAYER TRANSFER - A method of producing a composite structure comprises a step of producing a first layer of microcomponents on one face of a first substrate, the first substrate being held flush against a holding surface of a first support during production of the microcomponents, and a step of bonding the face of the first substrate comprising the layer of microcomponents onto a second substrate. During the bonding step, the first substrate is held flush against a second support, the holding surface of which has a flatness that is less than or equal to that of the first support used during production of the first layer of microcomponents.

2012-02-02

20120028441

Method and System for Bonding 3D Semiconductor Device - A method and system and for fabricating 3D (three-dimensional) SIC (stacked integrated chip) semiconductor devices. The system includes a vacuum chamber, a vacuum-environment treatment chamber, and a bonding chamber, though in some embodiments the same physical enclosure may serve more than one of these functions. A vacuum-environment treatment source in communication with the vacuum-environment treatment chamber provides a selected one or more of a hydrogen (H

METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION - Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

2012-02-02

20120028444

DEFECT-FREE HETERO-EPITAXY OF LATTICE MISMATCHED SEMICONDUCTORS - A method includes providing a semiconductor substrate formed of a first semiconductor material; and forming a plurality of insulation regions over at least a portion of the semiconductor substrate, with a plurality of trenches separating the plurality of insulation regions apart from each other. A first epitaxial growth is performed to epitaxially grow a plurality of semiconductor regions in the plurality of trenches, wherein (111) facets are formed and exposed during the step of the first epitaxial growth. When the (111) facets of neighboring ones of the plurality of semiconductor regions touch each other, a second epitaxial growth is performed to continue grow the plurality of semiconductor regions to form (100) planes between the neighboring ones of the plurality of semiconductor regions.

2012-02-02

20120028445

SUSCEPTOR TREATMENT METHOD AND A METHOD FOR TREATING A SEMICONDUCTOR MANUFACTURING APPARATUS - A susceptor treatment method including placing a first substrate on a susceptor and forming a Si film on the first substrate by epitaxial growth, placing a second substrate on the susceptor in place of the first substrate and forming a SiC film on the second substrate by epitaxial growth, and allowing HCl gas to flow downward from above the susceptor while the susceptor, from which the second substrate has been removed, is heated to a temperature and rotated to remove the remaining crystalline grains derived from the epitaxial growth of Si film and the SiC film on the susceptor.

2012-02-02

20120028446

METHOD FOR FABRICATING GROUP III-NITRIDE SEMICONDUCTOR - A method of fabricating a group III-nitride semiconductor includes the following steps of forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again.

2012-02-02

20120028447

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes growing a first GaN layer on a SiC substrate, and forming a second GaN layer on the first GaN layer, the second GaN layer being grown under such conditions that a ratio of a vertical growth rate to a horizontal growth rate is lower than that in the growth of the first GaN layer.

2012-02-02

20120028448

Group III-Nitride Layers With Patterned Surfaces - A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

VERTICAL-TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.

2012-02-02

20120028451

SHAPED NANOCRYSTAL PARTICLES AND METHODS FOR MAKING THE SAME - Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a) forming a core having a first crystal structure in a solution, (b) forming a first arm extending from the core having a second crystal structure in the solution, and (c) forming a second arm extending from the core having the second crystal structure in the solution.

2012-02-02

20120028452

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - Provided is a method for manufacturing a silicon carbide semiconductor device, in order to obtain a smooth surface of silicon carbide while maintaining a high impurity activation rate, which includes a step of implanting an impurity into a surface layer of a silicon carbide substrate, a step of forming a carbon film on the surface of the silicon carbide substrate, a step of mounting the substrate on a sample stage of a susceptor disposed within the activation heat treatment furnace so that the carbon film and the susceptor are in contact with each other, and a step of performing an activation heat treatment on the silicon carbide substrate using the carbon film as a protective film.

2012-02-02

20120028453

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching.

2012-02-02

20120028454

PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

2012-02-02

20120028455

Method of manufacturing a semiconductor device - A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained.

2012-02-02

20120028456

ELECTRODE STUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

2012-02-02

20120028457

Metal Layer End-Cut Flow - A method of patterning a metal layer is disclosed. The method includes providing a substrate and forming a material layer over the substrate. The method includes forming a second material layer over the first material layer. The method includes performing a first patterning process to the second material layer to form a trench in the second material layer. The first patterning process defines a width size of the trench, the width size being measured in a first direction. The method includes performing a second patterning process to the trench to transform the trench. The second patterning process defines a length size of the transformed trench. The length size is measured in a second direction different from the first direction. The method also includes filling the transformed trench with a conductive material.

2012-02-02

20120028458

ALPHA PARTICLE BLOCKING WIRE STRUCTURE AND METHOD FABRICATING SAME - An alpha particle blocking structure and method of making the structure. The structure includes: a semiconductor substrate; a set of interlevel dielectric layers stacked from a lowermost interlevel dielectric layer closest to the substrate to a uppermost interlevel dielectric layer furthest from the substrate, each interlevel dielectric layer of the set of interlevel dielectric layers including electrically conductive wires, top surfaces of the wires substantially coplanar with top surfaces of corresponding interlevel dielectric layers; an electrically conductive terminal pad contacting a wire pad of the uppermost interlevel dielectric layer; an electrically conductive plating base layer contacting a top surface of the terminal pad; and a copper block on the plating base layer.

2012-02-02

20120028459

MANUFACTURING PROCESS OF CIRCUIT SUBSTRATE - A manufacturing process of a circuit substrate is provided. A conductive structure including a first patterned conductive layer, a first dielectric layer, a second dielectric layer, a first conductive layer, and a second conductive layer is provided. The first dielectric layer and the second dielectric layer are respectively disposed on two opposite surfaces of the first patterned conductive layer. The first conductive layer and the second conductive layer are respectively disposed on the first dielectric layer and the second dielectric layer. The first dielectric layer is between the first patterned conductive layer and the first conductive layer. The second dielectric layer is between the first patterned conductive layer and the second conductive layer. A conductive via is formed at the conductive structure. The first conductive layer and the second conductive layer are patterned to respectively form a second patterned conductive layer and a third patterned conductive layer.

2012-02-02

20120028460

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member.

2012-02-02

20120028461

METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES - Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.

2012-02-02

20120028462

METHOD FOR FORMING CU FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state is introduced into the chamber 1. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac)

2012-02-02

20120028463

MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS - A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow.

2012-02-02

20120028464

APPARATUS AND METHOD FOR CONFORMAL MASK MANUFACTURING - A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.

2012-02-02

20120028465

PROCESS TO FORM VIA HOLE IN SEMICONDUCTOR WAFER - A process to form a via hole in a semiconductor wafer is disclosed. The process includes steps of, preparing a metal mask and etching the wafer by the metal mask as the etching mask. The preparation of the metal mask includes steps of: coating a nega-resist on the back surface of the wafer, carrying out the photolithography for the coated nega-resist, plating a metal selectively by the patterned photoresist, and removing the patterned photoresist.

2012-02-02

20120028466

Method for Chemical Mechanical Planarization of a Tungsten-Containing Substrate - The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound.

2012-02-02

20120028467

POLISHING FLUID AND POLISHING METHOD - Provided is a polishing fluid that has a fast polishing rate, and can selectively suppress polishing of layers including polysilicon or modified polysilicon during the chemical mechanical polishing in the manufacture of semiconductor integrated circuits, and a polishing method using the same. A polishing fluid used for the chemical mechanical polishing in which each of the components represented by the following (1) and (2) is included, the pH is 1.5 to 5.0, and a polishing workpiece can be polished in a range of a ratio represented by RR (other)/RR (p-Si) when the polishing rate of the first layer is RR (p-Si), and the polishing rate of the second layer is RR (other) of 1.5 to 200.

2012-02-02

20120028468

METHOD OF FORMING A LAYER ON A SEMICONDUCTOR SUBSTRATE HAVING A PLURALITY OF TRENCHES - A method of fabricating a semiconductor device is illustrated. A substrate having a plurality of trenches is provided. The plurality of trenches include trenches having differing widths. A first layer is formed on the substrate including in the plurality of trenches. Forming the first layer creates an indentation in the first layer in a region overlying a trench (e.g., wide trench). A second layer is formed in the indentation. The first layer is etched while the second layer remains in the indentation. The second layer may protect the region of indentation from further reduction in thickness. In an embodiment, the first layer is polysilicon and the second layer is BARC of photoresist.

2012-02-02

20120028469

METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM - A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness.

2012-02-02

20120028470

Increasing Robustness of a Dual Stress Liner Approach in a Semiconductor Device by Applying a Wet Chemistry - In a dual stress liner approach, unwanted material provided between closely spaced gate electrode structures may be removed to a significant degree on the basis of a wet chemical etch process, thereby reducing the risk of creating patterning-related irregularities. Consequently, the probability of contact failures in sophisticated interlayer dielectric material systems formed on the basis of a dual stress liner approach may be reduced.

2012-02-02

20120028471

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: forming a thin film on a substrate; forming a resist mask which forms a photoresist mask having an elliptical hole pattern on the thin film; shrinking a hole size of the second pattern by forming an insulating film on a side wall of the second pattern of the photoresist layer; and etching the thin film using the insulating film and the photoresist layer which form the second pattern having the shrinked hole size as a mask.

2012-02-02

20120028472

Method of Controlling Critical Dimensions of Vias in a Metallization System of a Semiconductor Device During Silicon-ARC Etch - When forming via openings in sophisticated semiconductor devices, a silicon-containing anti-reflective coating (ARC) layer may be efficiently used for adjusting the critical dimension of the via openings by using a two-step etch process in which, in at least one of the process steps, the flow rate of a reactive gas component may be controlled to increase or reduce the resulting width of an opening in the silicon ARC layer. In this manner, the spread of critical dimensions of vias around the target value may be significantly reduced while also reducing any maintenance and rework efforts.

2012-02-02

20120028473

Method of Reducing Delamination in the Fabrication of Small-Pitch Devices - A method of forming an integrated circuit structure includes providing a substrate; forming a first hard mask layer over the substrate; forming a second hard mask layer over the first hard mask layer; patterning the second hard mask layer to form a hard mask; and, after the step of patterning the second hard mask layer, baking the substrate, the first hard mask layer, and the hard mask. After the step of baking, a spacer layer is formed, which includes a first portion on a top of the hard mask, and a second portion and a third portion on opposite sidewalls of the hard mask. The method further includes removing the first portion of the spacer layer; removing the hard mask; and using the second portion and the third portion of the spacer layer as masks to pattern the first hard mask layer.

2012-02-02

20120028474

METHOD OF GROWING ELECTRICAL CONDUCTORS - A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.

2012-02-02

20120028475

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm

2012-02-02

20120028476

METHOD OF FORMING SEMICONDUCTOR STRUCTURES WITH CONTACT HOLES - Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.

2012-02-02

20120028477

Self-Assembly Pattern for Semiconductor Integrated Circuit - A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

2012-02-02

20120028478

VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE - Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

2012-02-02

20120028479

WRIST WORN ELECTRONIC DEVICE WITH BELT EMBEDDED WITH SENSOR - A wrist worn electronic device includes a main body having a processor and a receiving member electrically connected to the processor. A belt includes an electronic component and a connection member electrically connected to the electronic component. The connection member is used to engage the receiving member, to connect the belt to the main body and electrically connect the electronic component to the processor.

2012-02-02

20120028480

ALIGNMENT AND CONNECTION FOR DEVICES - A plug or connector including a coded magnet and an electrical contact. As the plug approaches a corresponding port, the coded magnet interacts with a magnet within the port. The interaction between the plug coded magnet and the port coded magnet provides a force to connect and/or align the plug with the port. Once the plug is received within the port, if a process is completed, the coded magnets polarities are altered to eject the plug from the port.

2012-02-02

20120028481

ELECTRONIC APPARATUS - An electronic apparatus including a first wiring board formed having a first area, a second area, and a third area, wherein the first area is formed extending in a first direction from the third area, and the second area is formed extending in a second direction, which is opposite to the first direction, from the third area, a second wiring board connected to the first wiring board, a first connector for connection to an external device, wherein the first connector is mounted on the first area of the first wiring board, a second connector for connection to an external device, wherein the second connector is mounted on the second area of the first wiring board, and a third connector connected to the second wiring board, wherein the third connector is mounted on the third area of the first wiring board, and is formed with a first terminal array and a second terminal array facing each other, wherein on the first wiring board a first differential transmission line is formed in a region from the first connector to the first terminal array, and a second differential transmission line is formed in a region from the second connector to the second terminal array.

2012-02-02

20120028482

Card-Edge Connector - The invention relates to a card-edge connector for securing and electrically connecting an electronic card to a circuit board. The card-edge connector includes an insulative, a set of first conductive terminals, a spacer, and a pair of card latching members. The insulative housing includes a plurality of first terminal receiving passageways positioned on an upper surface thereof and a plurality of second terminal receiving passageways positioned on the lower surface of the insulative housing. The set of first conductive terminals are alternately positioned in the plurality of first terminal receiving passageways and include a plurality of exposed end portions. The set of second conductive terminals are positioned in the plurality of second terminal receiving passageways and include a plurality of exposed end portions of the set of second conductive terminals. The spacer includes a plurality of receiving passageways and a plurality of third terminal receiving passageways positioned at a rear edge securing the plurality of exposed end portions of the set of first conductive terminals and the plurality of exposed end portions of the set of second conductive terminals. The pair of card latching members are inserted respectively into two catches respectfully positioned at two ends of a front side of the insulative housing.

Automatic Sliding Door - An automatic cover for universal serial bus (USB) port that opens and closes automatically when a USB plug is inserted and removed from the USB port. The automatic sliding door for a universal serial bus comprises a top door, a biasing means to urge the top door downward, a bottom door, a biasing means to urge the bottom door upward, and a support structure to which the top door and the bottom door are pivotally affixed. The top door and bottom door opens automatically upon insertion of a USB plug. When the USB plug is removed, the top door and bottom door closes automatically.

2012-02-02

20120028485

ELECTRONIC DEVICE - An electronic device includes an enclosure, a connector, a connector cover, and a resisting member. The enclosure defines at least one opening. The connector is disposed in the enclosure and corresponding to the at least one opening of the enclosure. The connector cover covers the opening to protect the connector and includes pivot shaft. The pivot shaft is rotatably connected to the enclosure. The resisting member elastically resists the pivot shaft and the enclosure.

2012-02-02

20120028486

Wire Cover, Wiring Method of Wires and Electrical Connector - The invention provides a wire cover, a wiring method and an electrical connector that can ensure routing of wires even in a limited space. The connector includes a housing, a lever, and a wire cover. The lever is mounted to the housing, and the wire cover is mounted to a side of a back surface of the housing. The wire cover includes a cover body, a wire routing passageway, and a hood portion. The cover body includes a plurality of wire receiving passageways positioned in one direction, while the wire routing passageway is directed into an inside of the cover body. The hood portion protrudes from a circumference of the wire routing passageway and provides a leading direction out of the wire routing passageway. The hood portion extends in a direction other than a direction of extension from a front surface and the back surface of the cover body.

2012-02-02

20120028487

Wire Cover and Electrical Connector - A wire cover has a cover body, a wire routing passageway and a hood. The cover body includes a plurality of wire receiving passageways positioned in one direction. The wire routing passageway is directed into an inside of the cover body. The hood protrudes from a circumference of the wire routing passageway and controls a leading direction out of the wire routing passageway wherein the hood has a different thicknesses between a base on a side of the cover body and a tip on another side of the cover body.

2012-02-02

20120028488

Method And System For Transmitting Data To And From A Television - A system and method for remotely controlling power to for transmitting data to and from a television in a simple and efficient manner is disclosed herein. The system comprises an article, an electrically-powered device and a controller. The article comprises a cord, an alternating current outlet socket, an alternating current input plug, a latching relay, a processor, a transceiver and a content cable. The system preferably uses a WiFi communication signal to transmit data to and from the remote controller to the article.

2012-02-02

20120028489

SEALING OF SPRING-LOADED CONTACT PIN - A connector having a housing and at least one spring contact for establishing releasable electrical contacts. Each spring contact has a first contact pin axially movable, and a contact-side end facing a front side of the housing. A planar sealing element is arranged at the front side of the housing, and seals against a first predetermined fluid pressure. At least one through hole is in the sealing element within which a second contact pin is arranged. The second contact pin has a first contact-side end facing the spring contacts, and a second contact side end facing away from the front side of the housing. The second contact pin is arranged within the through hole and seals the through hole against a second predetermined fluid pressure. The first contact pin with the contact-side end mechanically hits the contact-side end of the second contact pin-establishing electrical contact.

PLUG, SOCKET, AND CONNECTOR USING THE SAME - A connector includes a plug, a socket corresponding to the plug, and a protection assembly rotatably connected to one of the plug and the socket. The protection assembly is configured for encompassing the other one of the plug and the socket to firmly fixed the plug and the socket together when the plug is inserted into the socket.

2012-02-02

20120028492

CARD FOR INTERCONNECTING ELECTRONIC COMPONENTS USING INSULATED CABLE OR WIRE - A card for interconnecting electronic and electric components using cables or wires with associated sheathing comprises a casing made of insulating material and is provided with holes for accessing cavities which house lines composed of C-shaped connectors which are short-circuited together and lines composed of C-shaped connectors similar to those in the published patent Des. 235,554. Said access holes are arranged in two types of configuration. Lugs are provided at the ends extending along the width of the present card so as to allow the assembly of other cards of the same size which in this case house cylindrical or near-cylindrical objects (commercial pens). The card is insulated at the bottom by an insulating sheath with holes identical to the series of holes in the upper surface of the card. When interconnecting components with sheathed wire or cable a considerable amount of time is saved during wiring.

2012-02-02

20120028493

Piercing Connector for Continuous Flexible Bus - A continuous flexible bus comprises, for example, a plurality of metal clad flexible conductors. A device, such as a switch for example, is connected to the continuous flexible bus. In order to connect the device to the continuous flexible bus, at least one piercing connector is used, for example. The at least one piercing connector is configured, for example, to pierce one of the plurality of flexible metal clad conductors. Once the one of the plurality of flexible metal clad conductors is pierced, the at least one piercing connector causes, for example, an electrical connection between an electrical conductor in the pierced one of the plurality of flexible metal clad conductors and the switch.

2012-02-02

20120028494

TERMINAL CONNECTOR AND ELECTRIC WIRE WITH TERMINAL CONNECTOR - An electric wire with a terminal connector includes an electric wire and a female terminal connector crimped onto a core wire exposed at the electric wire. A female terminal connector has a wire barrel having a surface to be applied to the core wire. The surface has a plurality of recesses formed therein. Each recess has a parallelogram-shaped opening edge. The opening edge of the recess includes a pair of first opening edges that are parallel to each other and a pair of second opening edges that are parallel to each other and different from the first opening edges. The recesses are spaced in the extending direction of the first opening edges and are spaced in the extending direction of the second opening edges.

2012-02-02

20120028495

CABLE ASSEMBLY - A cable assembly, comprising a housing having a main portion, a plurality of conductive terminals received in the main portion of the housing, a cable having a plurality of wires and a metal shell with a no-joint-line surface enclosing the housing and comprising a front portion enclosing the housing and a rear portion enclosing the cable and a receiving space passing through the front portion and the rear portion.

2012-02-02

20120028496

LOW-PROFILE CABLE ASSEMBLY WITH GOOD FUNCTION EMI PREVENTION - A cable assembly includes an insulative housing, a plurality of conductive terminals received in the insulative housing, a cable having a shielding braid and a number of wires electrically connected to the conductive terminals, a metal shell enclosing the insulative housing and a grounding flake made of metal material, connected to the shielding braid of the cable and attached to the inner surface of the metal shell.

2012-02-02

20120028497

LOWER PROFILE CABLE CONNECTOR - A cable connector, comprising a conductive terminal having a pin portion for mating and a connecting portion located in the rear of the pin portion, an insulator accommodating the conductive terminal and defining an exposing portion locating at the front of thereof, a shell locating at the rear of the exposing portion, a cable having a signal wire and a grounding wire, the signal wire connects to the conductive terminal and the grounding wire connects to the shell.

2012-02-02

20120028498

CABLE CONNECTOR - A cable connector for transmitting a signal between first and second electronic devices includes a cable including at least one signal line disposed within a sheath; and a connector disposed at a first end portion of the cable. The connector includes a rotation member connected to the cable; a main body including a rotation member mounting portion to which the rotation member is rotatably connected; and a sub body that has a plug disposed at a first end portion, wherein the sub body is moveably connected to the main body.

2012-02-02

20120028499

ONE-PIECE COMPRESSION CONNECTOR BODY FOR COAXIAL CABLE CONNECTOR - A connector for mounting to the terminal end of a coaxial cable includes a connector body having a first body section and a second axially adjacent body section. The first and second body sections are frangibly connected to one another wherein axial compressive force upon the second body section towards the first body section causes the second body section to fracture and be displaced axially over the exterior of the first body section. As such, the second body section is a compression sleeve which when so moved radially compresses at least a portion of the first body section of the connector body to permit compression of a prepared coaxial cable end.

2012-02-02

20120028500

Shield Cover For Braided Wire Shield - A shield cover for a braided wire shield that is capable of securely fixing a braided wire to a shield member through a single pressing operation. The shield cover having a mating end, an inner casing, an outer cover housing. and a securing section. The inner casing positioned at an end opposite the mating end and having a shield receiving passageway. The outer cover housing positioned at the mating end of the shield cover and forming a connector receiving passageway being wider than the shield receiving passageway. The securing section extends from the inner casing toward the mating end and positioned apart from the outer cover housing.

2012-02-02

20120028501

CAMERA SOCKET CONNECTOR - An electrical connector suitable for correspondingly housing an electronic module, the electrical connector comprising an insulation body, a plurality of conductive terminals installed on the insulation body, and a shielding housing, wherein the insulation body is a square frame enclosed by four side walls, and the shielding housing is installed beneath the insulation body, comprising a bottom wall and four side walls extending upwards from the bottom wall, wherein the tops of the four side walls of the shielding housing are correspondingly joined to the bottom of the four side walls of the insulation body so as to jointly form an electronic module receiving space which opens upward, and wherein each of the conductive terminals comprises a docking part extending into the receiving space, a welded part extending out of the insulation body, and a fixed part fixed onto a side wall of the insulation body.

2012-02-02

20120028502

SOCKET CONNECTOR WITH CONTACT TERMINAL HAVING WAVEFORM ARRANGEMENT ADJACENT TO TAIL PORTION PERFECTING SOLDER JOINT - An electrical connector includes an insulative housing with a number of through holes extending therethrough, a number of contacts assembled to the insulative housing, and a number of solder balls disposed in the though holes and each is clasped by the tail and insulative housing. Each contact includes a vertical base portion secured to a first side of the through hole, a contact engaging arm extending from a top end of the base portion, and a solder portion extending from a bottom end of the base portion. The solder portion has a wave arrangement below the base portion and projecting from the base portion to a second side of the through hole which opposites to said first side, and a tail extending downwardly from the wave arrangement and capable of moving from the first side to the second side.

2012-02-02

20120028503

Hardened Micro SIM Adaptor - An adaptor is shaped for allowing use of a micro SIM card in a mini SIM card implemented device. An adaptor body is shaped like a micro SIM card and may include a cutout region for receiving a micro SIM card therein.

2012-02-02

20120028504

ECG Adapter System and Method - An electrocardiograph (ECG) adapter including an adapter body having a first end and a second end is presented. A monitor connector is positioned at the first end of the adapter body, the monitor connector adapted for coupling to an input of an ECG monitor. A first lead receptacle is positioned at the second end of the adapter body, the first lead receptacle configured to receive a first connector having a first pin configuration. A second lead receptacle is positioned at the second end of the adapter body, the second lead receptacle located adjacent the first lead receptacle and configured to receive a second connector having a second pin configuration different from the first pin configuration.

2012-02-02

20120028505

Power Strip with Articulatable Outlets - The present invention disclosed relates to a flexible electrical outlet strip that is comprised of a series of electric receptacles joined by independent ball and socket modules. Each ball and socket module is electrically interconnected with the power source and capable of rotating 360 degrees while maintaining electrical continuity. Each ball and socket connection also provides up to 60 degrees of pivotal movement at each socket joint. A fixed single-axis pivotal hinge joins receptacles

2012-02-02

20120028506

MODULAR OUTLET - In conjunction with a wiring in a house carrying data network signal, a modular outlet (

2012-02-02

20120028507

Contact And Electrical Connector - A contact having a contact section, a pair of tabs, and a pair of springs. The contact section includes a pair of arms extending frontward while facing each other and a support bearing the pair of arms. The pair of tabs are located on left and right sides of the contact with the contact section positioned between. The pair of springs having a sheared surface and bend from both left and right sides of the support respectively. Additionally, the pair of springs first bend outwardly to right and left away from the contact section, around respective central axes extending vertically and maintain the sheared surface facing up and down. Then, the pair of springs extend backward to link to the pair of tabs, respectively, the pair of springs supporting the contact section.

2012-02-02

20120028508

Memory Jack - An inconspicuous data storage device disguised as a communications jack secured to a wall or other relatively immobile object and linked to a computer with a breakaway data transfer cable.

2012-02-02

20120028509

FIXING STRUCTURE FOR FIXING METAL PLATE AND BOLT TO SYNTHETIC RESIN MEMBER - A downsized fixing structure for fixing a metal plate and a bolt to a synthetic resin member which can prevent an upper surface of the metal plate from being covered by a resin, is provided. The fixing structure includes: a bus bar, i.e. the metal plate; the bolt having the head portion and the shank portion passed through a through hole provided at the bus bar; and a housing

2012-02-02

20120028510

VISIBLE OPEN FOR SWITCHGEAR ASSEMBLY - An electrical connector assembly may include a connector body having a conductor receiving end, a connector end, a linking assembly connecting the conductor receiving end to the connector end, and a visible open port positioned in the connector body for viewing at least a portion of the linking assembly. The linking assembly may include a rearward conductive end conductively coupled to the conductor receiving end, a flexible conductor conductively coupled to the connector end, and a linking pin coupled to the flexible conductor and movable between a first position and a second position. The first position maintains the conductor receiving end electrically isolated from the connector end, and the second position conductively couples the conductor receiving end to the connector end.

Electrode Connection, in Particular for an Electrode Catheter - An electrode connection for an electrode catheter including an electrode, a line for electrical signals configured as a coil having an electrode end connected to the electrode, and a fixation device for the electrode end of the coil on the electrode, wherein the fixation device includes an inner sleeve, on which the electrode end of the coil sits, and a squeeze ring, which acts upon the electrode end of the coil, establishing an electrical contact with the electrode and mechanical clamping on the inner sleeve.

2012-02-02

20120028513

ELECTRIC CONNECTION DEVICE - An electric connection device for connecting a conductor having at least one contact bush of a conductive material with a clearing for a contact spring and a contact spring disposed thereat which clamps a conductor plugged into the contact bush from a plug-in side against the inner wall of the contact bush wherein the contact spring is pivotable outwardly through the clearing.

MARINE VESSEL - A marine vessel includes an outboard motor mounting portion provided at a stern of a hull, an outboard motor locating hole provided rearward of the outboard motor mounting portion and near the outboard motor mounting portion and penetrating vertically through the stern, a platform provided rearward of the outboard motor locating hole, and an outboard motor located in the outboard motor locating hole and mounted to the outboard motor mounting portion. This structure enables an occupant of the marine vessel to freely move in a space around the outboard motor on the platform and use the space.

2012-02-02

20120028518

Adjustable paddle for watercrafts - This disclosure is directed to a paddle for a watercraft having an adjustable shaft with upper and lower telescoping shaft portions. A lever in the palm grip applies tension to a cable to compress a plug at the end of the upper shaft portion to frictionally engage the lower shaft portion.

2012-02-02

20120028519

PADDLE WITH SELECTABLE BLADE ANGLE - A paddle for use in watersports is provided with shaft halves and blades at the end of each shaft half with a selectable offset angle between the blades. A joint connecting the shaft halves may include an interlocking coupling and a biasing member. The interlocking coupling maintains, in a use configuration, the offset angle of the blades, and allows, in a selection configuration, a change in the offset angle of the blades. The biasing member typically holds the interlocking coupling in the use configuration, and the shaft halves may be moved axially apart for the selection configuration. All mechanisms for switching the interlocking coupling between the use configuration and the selection configuration are normally located within the shaft halves. A retaining clip may be coupled between the first and second shaft halves to allow the selection configuration while preventing disassembly of the first and second shaft halves. A disassembly control can be provided independently of the angle selection for disassembly of the shaft halves.

MARINE ENGINE LUBRICATION - Trunk piston marine engine lubrication, when the engine is fueled by heavy fuel oil, is effected by a composition comprising a major amount of an oil of lubricating viscosity containing at least 50 mass % of a Group II basestock, and respective minor amounts of an overbased metal hydrocarbyl-substituted hydroxybenzoate detergent other than such a detergent having a basicity index of less than two and a degree of carbonation of 80% or greater and at least 1 mass % of a hydrocarbyl-substituted carboxylic acid, anhydride, ester or amide thereof. Asphaltene precipitation in the lubricant, caused by the presence of contaminant heavy fuel oil, is prevented or inhibited.

2012-02-02

20120028522

MARINE ENGINE LUBRICATION - Trunk piston marine engine lubrication, when the engine is fueled by heavy fuel oil, is effected by a composition comprising a major amount of an oil of lubricating viscosity containing at least 50 mass % of a basestock containing greater than or equal to 90% saturates and less than or equal to 0.03% sulphur or a mixture thereof, and respective minor amounts of an over-based metal hydrocarbyl-substituted hydroxybenzoate detergent other than such a detergent having a basicity index of less than two and a degree of carbonation of 80% or greater and at least 1 mass % of a hydrocarbyl-substituted carboxylic acid, anhydride, ester or amide thereof. Asphaltene precipitation in the lubricant, caused by the presence of contaminant heavy fuel oil, is prevented or inhibited.

2012-02-02

20120028523

Fin Assembly For Water Sports Board - A water sports board, such as a surf board, is described which has a rider operated center fin that is rotatably mounted on the lower side of the board which aids in steering the board. The central fin is rotatably moved by a center fin assembly that includes a driving mechanism such as a tiller or arm secured to a rotatable shaft passing through the board that is secured to the rotatable central fin. The rider uses his or her rear foot to apply a force to the tiller or arm which moves the tiller and in turn moves the center fin so as to steer the board.

2012-02-02

20120028524

DUCT TAPE WITH FOAM FILM BACKING LAYER - An adhesive tape includes a backing comprising a foam core layer having opposed first and second major surfaces and pair of water impermeable layers arranged on opposite sides of the foam core layer, a scrim arranged on the backing, and adhesive arranged on the backing and scrim. A method of making such a tape is also disclosed.

2012-02-02

20120028525

POLYMER LATEX SUITABLE FOR THE PREPARATION OF DIP-MOLDED ARTICLES - The present invention relates to a polymer latex made by free-radical emulsion polymerization comprising polymer particles containing structural units derived from at least one conjugated diene component, whereby said polymer particles comprise at least one hard phase segment and at least one soft phase segment, wherein the polymer latex is particularly suitable for the production of dip-molded articles. Furthermore, the present invention relates to a process for making such a polymer latex, to the use of said polymer latex for the production of dip-molded articles, to a compounded polymer latex composition that is suitable for the production of dip-molded articles, to a method for making dip-molded latex articles, as well as to the latex articles obtained thereby.

2012-02-02

20120028526

FRICTION MEMBER AND FRICTION MATERIAL THEREOF - A friction material includes a resin and a fibrous base material impregnated with the resin. The fibrous base material has a single ply, and includes a plurality of aramid fibers present in a first amount, a plurality of polyacrylonitrile-based carbon fibers present in a second amount that is less than the first amount, and diatomaceous earth present in a third amount that is greater than the first amount. The fibrous base material is substantially free from activated carbon. A friction member for operatively contacting a lubricated surface includes a substrate and a friction material. The friction material defines a first surface bonded to the substrate and a second surface configured for operatively contacting the lubricated surface.

TEXTILE ARTICLE FOR PATIENTS AFFECTED BY A SKIN DISEASE - Textile article, for example a garment, particularly an under-garment, or bed linen, for patients affected by a skin disease, said article comprising at least one textile layer comprising polytetrafluoroethylene (PTFE) fibres, said fibres being present at least at one surface of the textile layer intended to be in contact with the patient's skin. The PTFE fibres make it possible to obtain a very smooth surface, which is not sticky in the least and provides a pleasing sensation of freshness and slipperiness.

2012-02-02

20120028530

HIGH THREAD GROUND SHIELD - A method of forming a spark plug for an internal combustion engine is provided, the method including the steps of: separately securing a ground electrode to a ground shield, the ground shield having an elongated base section being configured to substantially surround a first insulator section of an insulator configured to substantially surround a center electrode, the insulator having a substantially cylindrical body with at least the first insulator section and a second insulator section, the first and second insulator sections having first and second diameters respectively and being separated by an insulator shoulder; and the elongated center electrode having a center electrode tip at one end and a terminal proximate another end of the center electrode, wherein the ground shield has a frustoconical flange protruding from a first end of the elongated base section, the frustoconical flange being configured to engage the insulator shoulder, and wherein the ground electrode extends from a second end of the elongated base section to define a spark gap with respect to the center electrode tip; and securing the ground shield to the spark plug after the ground electrode has been separately secured to the ground shield.

2012-02-02

20120028531

INFLATABLE PINATA - An expandable piñata including a body having a front wall, a rear wall, a left side portion, a right side portion, a top portion, and a bottom portion that define an interior cavity of the piñata; one or more pouches coupled to each of the front wall, back wall, left side portion, and right side portion; and a valve coupled to the body and configured for selectively inflating and deflating the interior cavity, the body being inflatably and deflatably adjustable between a first, substantially flat configuration, and a second expanded configuration.

2012-02-02

20120028532

STUFFED TOYS HAVING INTERCHANGEABLE SCENT PACKETS AND METHODS AND SYSTEMS INCLUDING SUCH STUFFED TOYS - A scented stuffed toy including at least one interchangeable scented packet, a method of forming the scented stuffed toy, and a system for scenting an area. The scented stuffed toy includes an interior portion within a body of the stuffed toy, at least one interchangeable scented packet disposed within the interior portion, and a fastening structure for selectively accessing the interior portion. The scented stuffed toy may be formed by opening a fastening structure in a body of the stuffed toy to expose an interior portion of the body of the stuffed toy, disposing at least one interchangeable scented packet within the interior portion of the body of the stuffed toy, and closing the fastening structure. A system for scenting an area including the scented stuffed toy is also disclosed.

2012-02-02

20120028533

Baby toy with baby care items - A baby distraction item and more specifically a baby toy for storing baby care items such as baby clean-up items with the baby toy temporarily distracting a baby with the baby top comprising either a cover or a base with a chamber for holding baby care item so that when a caretaker cleans up a baby, the baby may grasp the handle and play with the base or cover as a toy to distract the baby while a diaper is changed.

2012-02-02

20120028534

STRUCTURAL SUPPORT FASTENER - A self-retaining structural support fastener that grips a portion of rigid tile material and aligns the tile material in a planar direction to form structures. The invention more specifically relates to a plastic, acrylic, rubber or polymeric clip that is formed in U, T, X, I or L shapes and provides for an attachment of one or more clips together to form fasteners of various shapes in various planar directions, the fasteners to be used to fabricate multi-dimensional representative environmental constructs that simulate modular, multilevel structures and man-made and natural environments.

2012-02-02

20120028535

One Sensor Direction Finder - A low cost method making use of a single sensor only, to detect the relative direction of a light source. Most suitable for toys and low cost gadgets.

2012-02-02

20120028536

Game call mouth positioner and tone tuner - A game call device that helps position a user's mouth over a reed call and select the call tone desired. An elastomeric cap with a reed aperture fits snugly over a reed assembly. The cap helps the user find the right position for the mouth and lips. The rubber cap helps the user to press down on the reed and reed assembly to change the pressure on the reed and the space created by the cap's cavity. Tone or pitch holes in the cap allow the user to close the holes with the user's fingers or mouth and further adjust the tone and pitch of the call.

2012-02-02

20120028537

Spirit ball - This invention will be used as a novelty item for sporting, school, team events or just to show overall spirit. It is a handheld device that can be operated by pressing an on/off switch which will in turn cause the Styrofoam ball on top of the base to rotate. The speed of the “Spirit Ball” will vary depending on how long the on/off switch is depressed.

2012-02-02

20120028538

ELECTRICAL CHARGER FOR RECHARGEABLE ELECTRICAL WIRELESS UNIT - A handheld electrical charger for a toy vehicle provides a manual handle on the housing for generating kinetic energy. A dynamo within the housing and in mechanical communication with the handle generates electrical energy from the kinetic energy. A power takeoff transfers a portion of the kinetic energy or the electrical energy to a power inlet for a toy, and the toy is separable from the charger. The toy includes an electrical storage device to be charged by electrical output from the inlet. The toy is operable as a toy under its own recharged electrical power when the power take off and power inlet is disconnected. There can be a power storage for DC power in the housing and/or in the toy. A dock is provided for selectively creating an electrical coupling of the toy vehicle to transfer the electrical power and decoupling to allow the vehicle to operate independently of the charger.