Abstract

Optical absorption and photoluminescence have been used to determine the nitrogen concentration in liquid phase epitaxy GaP and GaxIn1−xP layers. Both methods give the same variation of nitrogen concentration. The same nitrogen maximum concentration of [N]=8×1017 cm−3 has been found in GaP and in Ga0.998In0.002 grown at 900 °C and PNH3>10−3 atm. In InGaxIn1−xP, it has been shown that the nitrogen concentration incorporated in the layer decreases as the indium amount increases for indium concentrations less than 5%, in samples prepared with identical growth conditions.