Jung-Hoon Park

Jung-Hoon Park, Gyeonggi-Do KR

Patent application number

Description

Published

20080224728

On-die termination circuit of semiconductor memory apparatus - An on-die termination circuit of a semiconductor memory apparatus includes a comparator that compares a voltage corresponding to a normal code with a reference voltage to output a comparison signal. A code adjusting unit varies the normal code according to the comparison signal, outputs the varied normal code, and resets the normal code to a predetermined reset code or a variable fuse code.

09-18-2008

20090052257

NONVOLATILE SEMICONDUCTOR MEMORIES FOR PREVENTING READ DISTURBANCE AND READING METHODS THEREOF - A method of reading a flash memory device can include driving a selected word line by applying a selection voltage thereto and driving unselected word lines by applying a first voltage thereto, driving the unselected word lines and first and second selection lines by applying a second voltage that is higher than the first voltage thereto, and reading data from a memory cell that is coupled to the selected word line.

02-26-2009

20100054073

SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a clock inputting unit configured to receive a system clock and a data clock, a clock dividing unit configured to divide a frequency of the data clock to generate a data division clock and determining a phase of the data division clock according to a division control signal, a phase dividing unit configured to generate a plurality of multiple-phase data division clocks each having a predetermined phase difference according to the data division clock, and a first phase detecting unit configured to detect a phase of the system clock based on a predetermined selection clock among the multiple-phase data division clocks, and generate the division control signal according to the detection result.

03-04-2010

20100060329

SEMICONDUCTOR DEVICE - A semiconductor device includes: a clock input unit configured to receive a system clock and a data clock externally; a phase dividing unit configured to generate a plurality of multi-system clocks in response to the system clock, wherein each of the multi-system clocks has an individual phase difference; a phase detecting unit configured to detect phase differences between the plurality of multi-system clock and the data clock and to generating generate a training information signal in response to the detection result; and a signal transmitting unit configured to transmit the training information signal.

03-11-2010

20100165758

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - The semiconductor memory device includes a data input/output unit configured to input data synchronously with a data clock and to output the data to a memory cell in response to an output strobe signal; and an output strobe signal generation unit configured to output the output strobe signal, wherein the output strobe signal is synchronized with a system clock in response to a write command regardless of whether the semiconductor memory device is in a write training mode.

07-01-2010

20110050294

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME - A semiconductor device includes a clock input block to receive a system clock and a data clock, a clock frequency dividing block to generate a plurality of multi-phase data frequency division clocks each of which has the phase difference of a predetermined size by dividing a frequency of the data clock and to determine whether or not phases of the plurality of multi-phase data frequency division clocks are reversed in response to a frequency division control signal, and a first phase detecting block to detect a phase of the system clock based on a phase of a first selected clock that is predetermined among the plurality of multi-phase data frequency division clocks and to is determine a logic level of the frequency division control signal in response to the detected result.

03-03-2011

20110050295

SEMICONDUCTOR DEVICE - A semiconductor device for applying an auto clock alignment training mode to reduce the time required for a clock alignment training operation. The semiconductor device adjusts the entry time of the auto clock alignment training mode to prevent the clock alignment training operation from malfunctioning. The semiconductor device includes a clock division block configured to divide a data clock to generate a data division clock, a phase multiplex block configured to generate a plurality of multiple data division clocks in response to the data division clock, a logic level control block configured to set a period, in which a division control signal is changeable, depending on the data division clock, and a first phase detection block configured to detect a phase of a system clock on the basis of the multiple data division clocks in the period, and to generate the division control signal corresponding to a detection result.

03-03-2011

20110161732

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME - A semiconductor device includes an internal circuit configured to perform a specified operation in response to a predetermined command; a normal data input/output section configured to input/output a normal data synchronized with a center of a source clock, in response to data input/output commands; and a data recovery information signal input/output block configured to receive and store a data recovery information signal synchronized with an edge of the source clock and having a predetermined pattern, in response to either a command of the data input/output commands or the predetermined command upon entry to a data recovery operating mode, and to output the data recovery information signal after the passage of a predetermined time period.

06-30-2011

20110267907

SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR SYSTEM INCLUDING THE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR OPERATING THE SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a first data input/output unit configured to receive a normal training data, whose data window is scanned based on an edge of a source clock, in response to a training input command, and output a data in a state where an edge of the data window is synchronized with the edge of the source clock in response to a training output command, and a second data input/output unit configured to receive a recovery information training data, whose data window is scanned based on the edge of the source clock, in response to the training input command, and output a data in a state where an edge of a data window is synchronized with the edge of the source clock in response to the training output command.

11-03-2011

20120144278

ERROR CODE PATTERN GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - An error code pattern generation circuit includes a first storage unit configured to store at least one bit of an error code, and output error data for a first time period; and a second storage unit configured to store at least one remaining bit of the error code and output the error data for a second time period which is different from the first time period.

06-07-2012

20120262999

SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A semiconductor memory device includes a system clock input block configured to be inputted with a system clock, a data clock input block configured to be inputted with a data clock, a first phase detection block configured to compare a phase of the system clock, generate a first phase detection signal, and determine a logic level of a reverse control signal in response to the first phase detection signal, a second phase detection block configured to compare a phase of a clock acquired by delaying the system clock by a correction time, generate a second phase detection signal, and determine a logic level of a clock select signal in response to the first and second phase detection signals, and a clock select block configured to select and output the data clock or a clock acquired by delaying the data clock.

10-18-2012

20130039143

SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR SYSTEM INCLUDING THE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR OPERATING THE SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a first data input/output unit configured to receive a normal training data, whose data window is scanned based on an edge of a source clock, in response to a training input command, and output a data in a state where an edge of the data window is synchronized with the edge of the source clock in response to a training output command, and a second data input/output unit configured to receive a recovery information training data, whose data window is scanned based on the edge of the source clock, in response to the training input command, and output a data in a state where an edge of a data window is synchronized with the edge of the source clock in response to the training output command.

02-14-2013

20130127503

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a comparison unit configured to compare the phases of a plurality of clocks having different frequencies and output a phase comparison signal, a phase inversion control unit configured to generate a phase inversion control signal, and a start control unit configured to generate a start control signal in response to a clock enable signal, wherein the comparison unit is configured to start an operation in response to the start control signal and invert, in response to the phase inversion control signal, a phase of an internal clock generated from one of the plurality of clocks when the plurality of clocks have different phases.

05-23-2013

20140258767

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME - A semiconductor device includes an internal circuit configured to perform a specified operation in response to a predetermined command; a normal data input/output section configured to input/output a normal data synchronized with a center of a source clock, in response to data input/output commands; and a data recovery information signal input/output block configured to receive and store a data recovery information signal synchronized with an edge of the source clock and having a predetermined pattern, in response to either a command of the data input/output commands or the predetermined command upon entry to a data recovery operating mode, and to output the data recovery information signal after the passage of a predetermined time period.

09-11-2014

20150046743

SEMICONDUCTOR DEVICE AND SYSTEM INCLUDING THE SAME - A semiconductor device includes a plurality of data output circuits suitable for outputting data to outside; an address training driver suitable for generating a plurality of address training data and a control signal; a plurality of data lines suitable for transferring the address training data to the data output circuits; and a self-correction circuit suitable for correcting a delay time of the address training data that reaches the data output circuits from the address training driver through the plurality of data lines, and correcting skew of the data that is outputted from the data output circuits.

02-12-2015

Patent applications by Jung-Hoon Park, Gyeonggi-Do KR

Jung-Hoon Park, Kyoungki-Do KR

Patent application number

Description

Published

20090128185

On-die termination circuit and driving method thereof - An on-die termination circuit is capable of increasing a resolution without enlargement of a chip or a layout size. The on-die termination circuit includes a control means, a termination resistance supply means, a code signal generating means. The control means sequentially generates a plurality of control signals in a response to a driving signal. The termination resistance supply means supplies a termination resistance in response to a coarse code signal having a plurality of bits and a fine code signal having a plurality of bits. The code signal generating means controls the fine code signal and the coarse code signal in response to the plurality of the control signals in order that the termination resistance has a level which is correspondent to an input resistance.

05-21-2009

Jung-Hoon Park, Gangnam-Gu KR

Patent application number

Description

Published

20120201417

APPARATUS AND METHOD FOR PROCESSING SENSORY EFFECT OF IMAGE DATA - A method and apparatus is capable of processing a sensory effect of image data. The apparatus includes an image analyzer that analyzes depth information and texture information about at least one object included in an image. A motion analyzer analyzes a motion of a user. An image matching processor matches the motion of the user to the image. An image output unit outputs the image to which the motion of the user is matched, and a sensory effect output unit outputs a texture of an object touched by the body of the user to the body of the user.