A new photomask technology with the Advanced Binary Film (ABF) by HOYA has been established. The film of
relatively low thickness is expected to show the best lithography performance. The simple film structure of thin film of
chemically amplified resist, as a mask layer for etching, on the thin ABF film enables us to obtain sub-50nm small
features in a photomask. The thinness of the film also helps to avoid pattern collapse in cleaning steps. The photomask
with ABF expecting the best currently available lithography performance shows the best achievable durability for use in
ArF lithography process steps and the best attainable feasibility in the fabrication process steps for leading edge
photomasks.