Abstract

This paper analyzes the impact of femtosecond laser pulse irradiation on the crystallinity of silicon wafers by means of electron backscatterdiffraction (EBSD) measurements. EBSD based image quality maps and orientation imaging microscopy maps are correlated to the grade of the silicon crystallinity. We analyze the impact of accumulated net laser irradiation originating from a laser spot overlap that is necessary to process macroscopic areas, e.g., for sulfur doping of semiconductor devices. Furthermore, we demonstrate that post processing annealing recovers crystallinity and therefore allows fs-laser processed silicon to be used in semiconductor device manufacturing.

[Manufacture or treatment of devices consisting of
a plurality of solid state components or integrated circuits formed in or on a common
substrate or of specific parts thereof; Manufacture of integrated circuit devices or of
specific parts thereof, Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof, Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof]