With the 80-nm technology, first developed by Samsung in September 2003, the company’s production efficiency could increase by 50 percent over the previous 90-nm process to meet demand for DDR2 memory chips, Samsung said.

Samsung also said it will focus on churning out 512-megabyte DDR2 chips with the new process technology, and then expand production into other DRAM chip families.

"With demand for DDR2 at its highest level since its market debut in 2004, our 80-nm technology provides us with the ability to more efficiently support the sustained demand growth that is expected in the DDR2 marketplace this year," said Tom Trill, DRAM Marketing Director of Samsung Semiconductor Inc.

Samsung attributed the smooth transition from 90-nm to 80-nm technology to its utilization of the basic features of 90-nm geometries, thus minimizing the need upgrades to its fabrication lines.
The move to 80-nm circuitry was sped up by using a recess channel array transistor (RCAT) that enhances the refresh rate, a critical element in data storage, said Samsung.

The RCAT also reduces cell area coverage, allowing for increased process scaling by freeing up the space for chip-per-wafer growth.