LFPAK Mosfets reduce footprint by 46 per cent

NXP Semiconductors has brought out a range of automotive power Mosfets housed in the compact, thermally enhanced Loss Free Package (LFPAK).

The new range of Q101 qualified LFPAK Mosfets delivers a reliable Power SO-8 package.

LFPAK is optimised for high-density automotive applications, with a footprint 46 per cent smaller than that of DPAK, while offering similar thermal performance.

With an ever-increasing consumer demand for more electronic applications, automotive OEMs face the challenge of introducing new features within the vehicle’s limited space, while trying to maintain fuel efficiency, electronic stability and reliability.

LFPAK is NXP’s solution to the automotive requirement for a reliable, thermally enhanced power package with significantly reduced footprint.

The package design has been optimised to give the best thermal and electrical performance, cost and reliability to automotive OEMs.

It overcomes the thermal limitations of SO8, enabling thermal resistance comparable to that of larger power packages such as DPAK.

The NXP LFPAK package uses a copper-clip design to reduce the package resistance and inductance, which in turn reduces the RDS(on) and switching losses of the Mosfet.

LFPAK offers the designer a Mosfet with similar electrical and thermal performance to DPAK, with a footprint 46 per cent smaller.

This helps in designing a smaller solution.

It also helps to achieve up to a 46 per cent higher power density in an existing design without increasing the module size or compromising on reliability.

The full NXP range of LFPAKs allows designers to pick and choose devices according to application requirements, while enabling them to change their selection to suit module requirements.

NXP’s LFPAK range offers best-in-class performance and reliability across the five voltage grades compared with all fully automotive qualified Power SO-8 Mosfets available.