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Abstract

In a beam-addressable memory it is proposed to utilize the presence or absence of voids in recording and reading information. The memory consists of a layered structure or sandwich formed by having top and bottom layers of a material exhibiting low-vapor pressure and high strength, e.g., thin carbon, SiO foil, and having a center layer of high-vapor pressure material with a low-heat conductivity, such as amorphous chalcogenides or amorphous polymers. An electron beam is employed to melt a desired region locally to form a void in the center layer. Illustrative materials for the center layer are selenium, tellurium and sulphur.

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United States

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English (United States)

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Electron Beam Addressable Memory by Void Formation

In a beam-addressable memory it is proposed to utilize the presence or
absence of voids in recording and reading information. The memory consists of a
layered structure or sandwich formed by having top and bottom layers of a
material exhibiting low-vapor pressure and high strength, e.g., thin carbon, SiO
foil, and having a center layer of high-vapor pressure material with a low-heat
conductivity, such as amorphous chalcogenides or amorphous polymers. An
electron beam is employed to melt a desired region locally to form a void in the
center layer. Illustrative materials for the center layer are selenium, tellurium and
sulphur.

Presence of voids can be read by an electron-beam transmission
characteristic, because of their low-mass absorption. Erasure of all voids is
achieved by thermal heating of the sandwich to the flow stage (glass
transmission temperature) of the center layer. Erasure of individual voids is
achieved, by local heating with an electron beam of moderate intensity to get
local flow of the material.

In such a system, the center layer is vaporized locally and the gaseous
material is constrained from escape into the vacuum of the system upon writing
or void creation. Exemplary voids of 1 micron and less diameter may be formed
in a sandwich of C-Se-C and of SiO(2)-Se-SiO(2) (approx.= 100-200-100
Angstroms), wherein the sandwich is held at a temperature < 50 degrees C with
the center layer being amorphou...