DFN1010 Transistors in a 1.1 mm² Leadless Plastic Package

NXP's small and powerful next generation of packaging for currents up to 3 A

NXP Semiconductors' DFN1010 series transistors are small and powerful. They are the next generation of packaging for currents up to 3 A. They are high Ptot MOSFETs and bipolar transistors with benchmark values for RDSon and VCEsat. These transistors are perfect for power management and load switches in space-critical applications. DFN1010 Brochure

Package Details

Ultra-small and flat package (1.1 x 1 x 0.37 mm)

Single and dual configuration (smallest package for dual transistors)

Power dissipation (Ptot) of 1 W (DFN1010D-3)

Single package with tin-plated, solderable side pads for improved mounting and automotive conformity

Features

Single and Dual MOSFETs (N-ch/P-ch)

Low RDSon down to 34 mOhm

ID up to 3.2 A

Voltage range of 12 V to 80 V

ESD protection of more than 1 kV

Single Bipolar Transistors

Low VCEsat values down to 70 mV

Collector current (IC) up to 2 A, peak collector current (ICM) up to 3 A