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Research

Prof. Rickett’s research focuses on the investigation of the fundamental performance limitations of microelectronic circuits. His research crosses the fields of device physics, material science, physics and circuit design, investigating the ultimate capabilities of microelectronic devices and how these are harnessed by differing circuit topologies to produce the highest performing systems. His research covers a wide range of areas, including Si and Polymer nanowire FETs, RF graphene circuits, Spinwave devices as well as nonlinear circuits, high-speed ADCs, neural networks and energy conversion.

Due to the crowding of the EM spectrum and the plethora of communication standards, both commercial and military, the ability to adaptive receive Radio Frequency (RF) information is crucial. Using high-speed ADCs to convert directly from RF to the [...]

Solitons are specialized nonlinear waves that propagate in nonlinear, dispersive media. They are found throughout nature in water waves, plasma, optical fibers and superconducting josephson junctions. While under investigation ever since their [...]

In this research we investigate an emerging class of oscillators known as spin-torque oscillators (STOs). Similar to YIG oscillators, the oscillating mechanism is a gyromagnetic procession of magnetic moment in a DC bias field. Differing from the [...]

This uses tip-directed field emission chemical vapor deposition (CVD) for the precise fabrication of structures on the nanometer scale. Device geometry will be accurately determined by probe manipulation and controlled energy delivery at the probe [...]