Abstract: D25.00008 : Structure and defects at the SiC:SiO$_{2}$ interface*

Authors:

Blair Tuttle(Penn State Behrend)

Sokrates Pantelides(Vanderbilt University)

The pervasion of defects at the SiC:SiO$_{2}$ interface has limited the
performance and commercializing of SiC based transistors. While the defects
are believed to be related to excess carbon in the interfacial region, no
compelling microscopic models exists. Here we report the generation of
microscopic interfaces models for the SiC:SiO$_{2}$ interface. These models
include a 1 nm amorphous oxide and several layers of crystalline SiC. Defect
and defect reactions are explored. For instance, the 3-fold bonded carbon
defect is calculated to have an acceptor level at Ev + 1.4 eV close to the
value found experimentally and encouraging confidence in the methods
employed. The recently discovered beneficial effect of sodium ions motivates
our examination of the basic electrochemistry of the sodium ion interactions
with the ideal and defected interfaces. A comparison between microscopic
defect results and experiment will be presented.

*Work supported by the NSF grant DMR-0907385

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.D25.8