Abstract

Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer,, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.