Back in May 2013, the German-French team of Fraunhofer ISE, Soitec, CEA-Leti and the Helmholtz Center Berlin had already announced a solar cell with 43.6% efficiency. Building on this result, further intensive research work and optimization steps led to the present efficiency of 44.7%.

These solar cells are used in concentrator photovoltaics (CPV), a technology which achieves more than twice the efficiency of conventional PV power plants in sun-rich locations. The terrestrial use of so-called III-V multi-junction solar cells, which originally came from space technology, has prevailed to realize highest efficiencies for the conversion of sunlight to electricity. In this multi-junction solar cell, several cells made out of different III-V semiconductor materials are stacked on top of each other. The single subcells absorb different wavelength ranges of the solar spectrum.

“We are incredibly proud of our team which has been working now for three years on this four-junction solar cell,” says Frank Dimroth, Department Head and Project Leader in charge of this development work at Fraunhofer ISE. “This four-junction solar cell contains our collected expertise in this area over many years. Besides improved materials and optimization of the structure, a new procedure called wafer bonding plays a central role. With this technology, we are able to connect two semiconductor crystals, which otherwise cannot be grown on top of each other with high crystal quality. In this way we can produce the optimal semiconductor combination to create the highest efficiency solar cells.”

“This world record increasing our efficiency level by more than 1 point in less than 4 months demonstrates the extreme potential of our four-junction solar cell design which relies on Soitec bonding techniques and expertise,” says André-Jacques Auberton-Hervé, Soitec’s Chairman and CEO. “It confirms the acceleration of the roadmap towards higher efficiencies which represents a key contributor to competitiveness of our own CPV systems. We are very proud of this achievement, a demonstration of a very successful collaboration.”

“This new record value reinforces the credibility of the direct semiconductor bonding approaches that is developed in the frame of our collaboration with Soitec and Fraunhofer ISE. We are very proud of this new result, confirming the broad path that exists in solar technologies for advanced III-V semiconductor processing,” said Leti CEO Laurent Malier.

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