Siemens Kristalloflex D5000: Cu Kalpha radiation (1.5418 angstrom) + Automated 40-samples arrays + Possibility to record diffraction patterns with small amount of powders on polished Si sample holders + Possibility to record diffraction patterns at high temperature (up to 800 ?C in the presence of oxygen) under a wide variety of flowing gas mixtures (in situ approach) + Possibility to measure simultaneously composition of the gas at the outlet of such cell by mass spectrometry (operando approach)