Abstract

The light extraction of 1 × 1 mm2 GaN-based blue light-emitting diodes (LEDs) was enhanced by a self-assembled monolayer (SAM) of silica submicron spheres. The silica spheres were synthesized with various spherical sizes via the ammonia-catalyzed hydrolysis and condensation of tetraethyl orthosilicate in water/ethanol solutions. Hexagonal closely-packed (HCP) silica sphere monolayer was formed onto the indium tin oxide layer of the LED by a spin coating process. The size effect of silica spheres on the light-extraction efficiency (LEE) of GaN-based LEDs was theoretically studied and their optimum size was determined. The simulation results showed that the use of silica spheres can improve the LEE by 1.1-1.32 times compared to the conventional LEDs. The light output power of the LED with 650-nm-thick SAM of HCP silica spheres was experimentally enhanced by 1.28 and 1.23 times under the injection currents of 100 and 350 mA, respectively. By employing the SAM of HCP silica spheres, the directional emission pattern was relatively converged, indicating a reasonable consistency with the simulation result.

(a) Calculated light-extraction enhancement of GaN-based LEDs as a function of the size of silica spheres, and (b) FDTD simulation results of wave propagation for LEDs with and without SAM of silica spheres.

(a) L-I-V curves of GaN-based LEDs with and without SAMs of HCP silica spheres, (b) normalized far-field radiation patterns of the corresponding LEDs. The inset of (a) shows the FE-SEM image of SAM of HCP silica spheres integrated on LED.