Abstract

The memory characteristics of InAs based quantum dot(QD)memory devices has been investigated by carrying out capacitance-voltage and current-voltage measurements. The dots which were embedded in the GaAsquantum well were charged by the electrons from the two dimensional electron gas and a clockwise hysteresis loop is observed on cyclically sweeping the gate bias. The number of trapped electrons is found to be two orders of magnitude lesser than the QD density. Interdot Coulombic interactions and phonon assisted electrontunneling was found to significantly affect the charge trapping ability of the QDs.

Received 20 March 2009Accepted 10 September 2009Published online 09 October 2009

Acknowledgments:

This research was supported by World Class Univeristy (WCU) program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. R32-2008-000-10204-0).