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Abstract:

Semiconductor package includes a first semiconductor package including a
first printed circuit board, and a first semiconductor device mounted on
the first printed circuit board, and a second semiconductor package
stacked on the first semiconductor package, and including a second
printed circuit board and a second semiconductor device mounted on the
second printed circuit board. The semiconductor package includes at least
one first through electrode electrically connecting the second
semiconductor package to the first printed circuit board through the
first semiconductor device.

Claims:

1. A stacked semiconductor package, comprising: a first semiconductor
package including a first printed circuit board and at least one first
semiconductor device mounted on the first printed circuit board; a second
semiconductor package stacked on the first semiconductor package, the
second semiconductor package including a second printed circuit board and
at least one second semiconductor device mounted on the second printed
circuit board; and a first through electrode electrically connecting the
second semiconductor package to the first printed circuit board through
the at least one first semiconductor device.

2. The stacked semiconductor package of claim 1, wherein the at least one
first semiconductor device is between the second semiconductor package
and the first printed circuit board, and the at least one first
semiconductor device further comprises a first connection electrically
connecting the first through electrode to the first printed circuit
board.

3. The stacked semiconductor package of claim 1, wherein the first
semiconductor package further comprises a first molding structure
partially covering the at least one first semiconductor device and the
first printed circuit board, and at least one first conductive pattern
electrically connecting the second semiconductor package to the first
printed circuit board through the first molding structure.

4. The stacked semiconductor package of claim 1, wherein the second
semiconductor package further comprises at least one second external
connection electrically connected to the first through electrode, and on
a surface of the second semiconductor package facing the first
semiconductor package.

5. The stacked semiconductor package of claim 4, further comprising a
second molding structure interposed between the first semiconductor
package and the second semiconductor package so as to cover the second
external connection.

6. The stacked semiconductor package of claim 1, wherein the at least one
first semiconductor device has a first surface facing the first printed
circuit board and a second surface facing the second semiconductor
package, and a re-distribution layer (RDL) on one of the first surface
and the second surface.

7. The stacked semiconductor package of claim 6, wherein the at least one
first semiconductor device includes at least one connection land and a
bond pad on the second surface, the RDL is on the second surface and
connects the at least one connection land to the bond pad, and the first
semiconductor package further comprises a bonding wire electrically
connecting the bond pad to the first printed circuit board.

8. The stacked semiconductor package of claim 1, wherein the at least one
first semiconductor device includes at least one connection pad on a
first surface, and further comprises a RDL on the first surface and
connecting the first through electrode to the at least one connection
pad.

9. The stacked semiconductor package of claim 1, wherein the first
semiconductor package further comprises at least one third semiconductor
device stacked on the first semiconductor device, and the at least one
third semiconductor device includes at least one second through electrode
electrically connecting the second semiconductor package to the first
semiconductor device through the at least one third semiconductor device.

10. The stacked semiconductor package of claim 1, wherein the at least
one first semiconductor device is a logic chip, and the at least one
second semiconductor device is a memory chip.

11. A semiconductor package, comprising: a lower package including a
lower substrate, at least one first semiconductor chip mounted on the
lower substrate, and a plurality of first through electrodes electrically
connected to the lower substrate through the at least one first
semiconductor chip; an upper substrate attached to the lower package; a
second semiconductor chip mounted on the upper substrate; and a plurality
of conductive patterns between the lower package and the upper substrate
and connected to the plurality of first through electrodes, wherein all
of the plurality of conductive patterns are arranged on the at least one
first semiconductor chip.

12. The semiconductor package of claim 11, wherein a width of the lower
substrate is smaller than 100 μm more than a width of the at least one
first semiconductor chip.

13. The semiconductor package of claim 11, wherein the width of the lower
substrate is substantially the same as that of the at least one first
semiconductor chip.

14. The semiconductor package of claim 11, wherein the plurality of
conductive patterns are formed of one selected from the group consisting
of a solder ball, a conductive bump, a conductive spacer, a pin grid
array (PGA), a lead grid array (LGA), an adhesive conductive film (ACF)
and a combination thereof.

15. The semiconductor package of claim 11, further comprising a plurality
of external terminals on a surface of the lower substrate, wherein the
plurality of external terminals have a first pitch, and the plurality of
conductive patterns have a second pitch different from the first pitch.

16. The semiconductor package of claim 15, wherein the second pitch is
smaller than the first pitch.

17. The semiconductor package of claim 15, wherein the plurality of
external terminals are formed of one selected from the group consisting
of a solder ball, a conductive bump, a conductive spacer, a PGA, an LGA,
an ACF and a combination thereof.

18. A semiconductor package, comprising: a lower package including a
lower substrate, at least one first semiconductor chip adjacent to the
lower substrate, a plurality of through electrodes penetrating the at
least one first semiconductor chip, and an interposer adjacent to the
first semiconductor chip; an upper substrate attached to the lower
package; a second semiconductor chip mounted on the upper substrate; and
a plurality of conductive patterns between the lower package and the
upper substrate, wherein the interposer includes a plurality of front
pads on a first surface, and a plurality of back pads formed on a second
surface facing the first surface and electrically connected to the front
pads.

19. The package of claim 18, wherein the interposer is between the at
least one first semiconductor chip and the lower substrate, the plurality
of front pads have a first pitch, corresponding to the plurality of
through electrodes, and the plurality of back pads have a second pitch
different from the first pitch.

20. The package of claim 18, wherein the interposer is between the at
least one first semiconductor chip and the upper substrate, the plurality
of front pads has a first pitch corresponding to the plurality of
conductive patterns, and the plurality of back pads has a second pitch
corresponding to the plurality of through electrodes.

21-39. (canceled)

Description:

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application claims priority under 35 U.S.C. §119 to
Korean Patent Application No. 10-2010-18644 filed on Mar. 2, 2010, the
disclosure of which is hereby incorporated by reference in its entirety.

BACKGROUND

[0002] 1. Field

[0003] Example embodiments of the inventive concepts relate to
semiconductors, and more specifically, stacked semiconductor packages in
which semiconductor packages are connected.

[0004] 2. Description of Related Art

[0005] Currently, the electronic industry is rapidly developing, and users
further demand light, compact and multifunctional electronic products. To
meet such demand, an electronic product assembly technique has been
developed, and in the technique, the same or different types of
semiconductor packages are implemented as one module. Package-On-Package
(PoP) technique may be a newly developed package technique to meet such
demand.

[0006] In the PoP, the same or different types of a plurality of
semiconductor packages are vertically stacked to reduce a horizontal
mounting area, so that the integration density may be enhanced.
Therefore, the PoP enables an electronic product to be compact in size,
and thus the product may be employed to implement the PoP. As a result, a
semiconductor package capable of enhancing structural and/or electrical
characteristics is requested.

SUMMARY

[0007] Example embodiments of the inventive concepts relate to
semiconductors, and more specifically, stacked semiconductor packages in
which semiconductor packages are connected.

[0008] Example embodiments of the inventive concepts provide a stacked
semiconductor package in which an area necessary for connecting upper and
lower packages is reduced to improve structural and/or electrical
characteristics.

[0009] Example embodiments of the inventive concepts also provide a method
of fabricating a stacked semiconductor package.

[0010] In accordance with example embodiments of the inventive concepts, a
semiconductor package includes upper and lower packages electrically
connected to each other by a through electrode. The semiconductor package
includes a first semiconductor package including a first printed circuit
board, and a first semiconductor device mounted on the first printed
circuit board; and a second semiconductor package stacked on the first
semiconductor package. The second semiconductor package includes a second
printed circuit board and a second semiconductor device mounted on the
second printed circuit board. A first through electrode electrically
connecting the second semiconductor package to the first printed circuit
board through the first semiconductor device is provided.

[0011] In some example embodiments, the first semiconductor device may be
formed between the second semiconductor package and the first printed
circuit board, and may further include a first connection electrically
connecting the first through electrode to the first printed circuit
board.

[0012] In other example embodiments, the first semiconductor package may
further include a first molding structure covering the first
semiconductor device and the first printed circuit board.

[0013] In still other example embodiments, the first molding structure may
entirely cover the first semiconductor device or expose at least one
surface.

[0014] In yet other example embodiments, the first semiconductor package
may further include a first through silicon via electrically connecting
the second semiconductor package to the first printed circuit board
through the first molding structure.

[0015] In yet other example embodiments, the second semiconductor package
may include a second external connection electrically connected to the
first semiconductor package on a surface facing the first semiconductor
package.

[0016] In yet other example embodiments, the second external connection
may be formed between the first through electrode or the first through
silicon via and the second semiconductor package.

[0017] In yet other example embodiments, the semiconductor package may
further include a second molding structure interposed between the first
semiconductor package and the second semiconductor package and covering
the second external connection.

[0018] In yet other example embodiments, the first semiconductor device
may have a first surface facing the first printed circuit board and a
second surface facing the second semiconductor package, and a
re-distribution layer (RDL) may be formed on one of the first surface and
the second surface.

[0019] In yet other example embodiments, the first semiconductor package
may further include a bonding wire electrically connecting the first
semiconductor device to the first printed circuit board.

[0020] In yet other example embodiments, the first or second semiconductor
package may further include at least one third semiconductor device
stacked on the first or second semiconductor device.

[0021] In yet other example embodiments, the first semiconductor device
may be a logic chip, and the second semiconductor device may be a memory
chip.

[0022] In yet other example embodiments, the first semiconductor package
and the second semiconductor package may be individually fabricated to be
stacked.

[0023] In yet other example embodiments, the second molding structure may
be formed after stacking the first semiconductor package and the second
semiconductor package.

[0024] In accordance with example embodiments of the inventive concepts, a
semiconductor package having a through electrode includes a lower
package, an upper substrate attached to the lower package and a plurality
of conductive patterns formed between the lower package and the upper
substrate. The lower package includes a lower substrate, a first
semiconductor chip mounted on the lower substrate, and a plurality of
first through electrodes electrically connected to the lower substrate
through the first semiconductor chip. A second semiconductor chip is
mounted on the upper substrate. The conductive patterns are connected to
the first through electrodes, and all of the conductive patterns are
arranged on the first semiconductor chip.

[0025] In some example embodiments, the width of the lower substrate may
be smaller than a value in which 100 μm is added to the width of the
first semiconductor chip. Further, the width of the lower substrate is
substantially the same as that of the first semiconductor chip.

[0026] In other example embodiments, a plurality of external terminals
formed on a surface of the lower substrate may be provided. The external
terminals may be arranged to have a first pitch, and the conductive
patterns may be arranged to have a second pitch different from the first
pitch. The second pitch may be smaller than the first pitch.

[0027] In still other example embodiments, the external terminals may be
formed of one selected from the group consisting of a solder ball, a
conductive bump, a conductive spacer, a pin grid array (PGA), a lead grid
array (LGA), an adhesive conductive film (ACF) and a combination thereof.
The conductive patterns are formed of one selected from the group
consisting of a solder ball, a conductive bump, a conductive spacer, a
PGA, an LGA, an ACF and a combination thereof.

[0028] In yet other example embodiments, the second semiconductor chip may
include at least one second through electrode. The upper substrate may
have the same width as, or a greater width than, the lower substrate. The
second semiconductor chip may be electrically connected to the upper
substrate by one selected from the group consisting of a bonding wire, a
beam lead, a conductive tape and a combination thereof.

[0029] In accordance with example embodiments of the inventive concepts, a
semiconductor package is provided. The semiconductor package includes a
lower package. The lower package includes a lower substrate, at least one
first semiconductor chip adjacent to the lower substrate, a plurality of
through electrodes penetrating the first semiconductor chip, and an
interposer adjacent to the first semiconductor chip. An upper substrate
is attached to the lower package. A second semiconductor chip is mounted
on the upper substrate. A plurality of conductive patterns is formed
between the lower package and the upper substrate. The interposer
includes a plurality of front pads formed on a first surface and a
plurality of back pads formed on a second surface facing the first
surface and electrically connected to the front pads.

[0030] In some example embodiments, the interposer may be disposed between
the first semiconductor chip and the lower substrate. The front pads may
be arranged to have a first pitch corresponding to the through
electrodes. The back pads may be arranged to have a second pitch
different from the first pitch.

[0031] In other example embodiments, the interposer may be disposed
between the first semiconductor chip and the upper substrate. The front
pads may be arranged to have a first pitch corresponding to the
conductive patterns. The back pads may be arranged to have a second pitch
corresponding to the through electrodes.

[0032] In accordance with example embodiments, a method of fabricating a
stacked semiconductor package includes mounting at least one first
semiconductor device on a first printed circuit board to form a first
semiconductor package, mounting at least one second semiconductor device
on the second printed circuit board to form a second semiconductor
package, stacking the second semiconductor package on the first
semiconductor package, and forming a first through electrode that
electrically connects the second semiconductor package to the first
printed circuit board through the at least one first semiconductor
device.

[0033] In example embodiments, a first connection is formed that
electrically connects the first through electrode to the first printed
circuit board. The at least one first semiconductor device may be between
the second semiconductor package and the first printed circuit board.

[0034] The at least one first semiconductor device and the first printed
circuit board may be partially covered with a first molding structure. At
least one first conductive pattern may be formed that electrically
connects the second semiconductor package to the first printed circuit
board through the first molding structure.

[0035] At least one second external connection electrically connected to
the first through electrode may be formed on a surface of the second
semiconductor package facing the first semiconductor package. A second
molding structure may be formed interposed between the first
semiconductor package and the second semiconductor package so as to cover
the second external connection.

[0036] In example embodiments, a re-distribution layer (RDL) may be formed
on a first surface of the at least one first semiconductor device facing
the first printed circuit board or a second surface of the at least one
first semiconductor device facing the second semiconductor package.

[0037] According to other example embodiments, at least one connection
land and a bond pad may be formed on the second surface. The RDL may be
formed on the second surface, and may connect the at least one connection
land to the bond pad. A bonding wire may be formed that electrically
connects the bond pad to the first printed circuit board.

[0038] According to still other example embodiments, at least one
connection pad and a RDL may be formed on a first surface. The RDL may
connect the first through electrode to the at least one connection pad.

[0039] In example embodiments, at least one third semiconductor device may
be stacked on the first semiconductor device. At least one second through
electrode may be formed that electrically connects the second
semiconductor package to the first semiconductor device through the at
least one third semiconductor device.

[0040] In accordance with example embodiments, a method of fabricating a
semiconductor package includes forming a lower package including a lower
substrate, at least one first semiconductor chip mounted on the lower
substrate, and a plurality of first through electrodes electrically
connected to the lower substrate through the at least one first
semiconductor chip, attaching an upper substrate to the lower package,
mounting a second semiconductor chip on the upper substrate, and forming
a plurality of conductive patterns between the lower package and the
upper substrate such that all of the plurality of conductive patterns are
positioned on the at least one first semiconductor chip, wherein the
plurality of conductive patterns are connected to the plurality of first
through electrodes.

[0041] According to example embodiments, the width of the lower substrate
may be formed smaller than 100 μm more than a width of the at least
one first semiconductor chip. The width of the lower substrate may be
formed substantially the same as that of the at least one first
semiconductor chip. The plurality of conductive patterns are formed of
one selected from the group consisting of a solder ball, a conductive
bump, a conductive spacer, a pin grid array (PGA), a lead grid array
(LGA), an adhesive conductive film (ACF) and a combination thereof.

[0042] According to example embodiments, a plurality of external terminals
may be formed on a surface of the lower substrate. The plurality of
external terminals may have a first pitch, and the plurality of
conductive patterns may have a second pitch different from the first
pitch. The second pitch may be smaller than the first pitch. The
plurality of external terminals may be formed of one selected from the
group consisting of a solder ball, a conductive bump, a conductive
spacer, a PGA, an LGA, an ACF and a combination thereof.

[0043] In accordance with example embodiments, a method of fabricating a
semiconductor package includes forming a lower package including a lower
substrate, at least one first semiconductor chip adjacent to the lower
substrate, a plurality of through electrodes penetrating the at least one
first semiconductor chip, and an interposer adjacent to the first
semiconductor chip, attaching an upper substrate to the lower package,
mounting a second semiconductor chip on the upper substrate, and forming
a plurality of conductive patterns between the lower package and the
upper substrate. The interposer may include a plurality of front pads on
a first surface, and a plurality of back pads formed on a second surface
facing the first surface and electrically connected to the front pads.

[0044] According to example embodiments, the interposer may be formed
between the at least one first semiconductor chip and the lower
substrate. The front pads may have a first pitch corresponding to the
plurality of through electrodes, and the plurality of back pads may have
a second pitch different from the first pitch.

[0045] According to other example embodiments, the interposer may be
formed between the at least one first semiconductor chip and the upper
substrate. The front pads may have a first pitch corresponding to the
plurality of conductive patterns, and the plurality of back pads may have
a second pitch corresponding to the plurality of through electrodes.

BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Example embodiments will be more clearly understood from the
following detailed description taken in conjunction with the accompanying
drawings. FIGS. 1-21 represent non-limiting, example embodiments as
described herein.

[0047] FIG. 1 is a cross-sectional view of a semiconductor package
according to a example embodiments of the inventive concepts;

[0048] FIG. 2 is an enlarged view of a portion K of FIG. 1;

[0049] FIG. 3 is a side view of a semiconductor device illustrated in FIG.
1;

[0050] FIG. 4 is a plan view of a part of a semiconductor package
according to a example embodiments of the inventive concepts;

[0051] FIGS. 5 to 7 are cross-sectional views of a stacked semiconductor
package in which a molding structure is formed according to example
embodiments of the inventive concepts;

[0052] FIGS. 8A, 8B and 8C are a cross-sectional view of a stacked
semiconductor package in which a stacked chip is formed according to
example embodiments of the inventive concepts;

[0053] FIGS. 9 and 10 are cross-sectional views of a stacked semiconductor
package in which a through silicon via is formed according to example
embodiments of the inventive concepts;

[0054] FIGS. 11 and 12 are cross-sectional views of a stacked
semiconductor package in which a molding structure is formed between
stacked packages according to example embodiments of the inventive
concepts;

[0055] FIGS. 13 to 15 are cross-sectional views of a stacked semiconductor
package in which a bonding wire is formed according to example
embodiments of the inventive concepts;

[0056] FIGS. 16 to 18 are cross-sectional views illustrating a method of
fabricating a stacked semiconductor package according to example
embodiments of the inventive concepts;

[0057] FIG. 19 is a cross-sectional view of a stacked semiconductor
package according to example embodiments of the inventive concepts;

[0058] FIG. 20 is a perspective view of an electronic device according to
example embodiments of the inventive concepts; and

[0059] FIG. 21 is a system block diagram of an electronic device according
to example embodiments of the inventive concepts.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0060] Various embodiments will now be described more fully with reference
to the accompanying drawings in which some embodiments are shown. These
inventive concepts may, however, be embodied in different forms and
should not be construed as limited to the embodiments set forth herein.
Rather, these embodiments are provided so that this disclosure is
thorough and complete and fully conveys the inventive concept to those
skilled in the art. In the drawings, the sizes and relative sizes of
layers and regions may be exaggerated for clarity.

[0061] It will be understood that when an element or layer is referred to
as being "on," "connected to" or "coupled to" another element or layer,
it can be directly on, connected or coupled to the other element or layer
or intervening elements or layers may be present. In contrast, when an
element is referred to as being "directly on," "directly connected to" or
"directly coupled to" another element or layer, there are no intervening
elements or layers present. Like numerals refer to like elements
throughout. As used herein, the term "and/or" includes any and all
combinations of one or more of the associated listed items.

[0062] It will be understood that, although the terms first, second,
third, etc. may be used herein to describe various elements, components,
regions, layers and/or sections, these elements, components, regions,
layers and/or sections should not be limited by these terms. These terms
are only used to distinguish one element, component, region, layer or
section from another region, layer or section. Thus, a first element,
component, region, layer or section discussed below could be termed a
second element, component, region, layer or section without departing
from the teachings of the present inventive concept.

[0063] Spatially relative terms, such as "beneath," "below," "lower,"
"above," "upper" and the like, may be used herein for ease of description
to describe one element's or feature's relationship to another element(s)
or feature(s) as illustrated in the figures. It will be understood that
the spatially relative terms are intended to encompass different
orientations of the device in use or operation in addition to the
orientation depicted in the figures. For example, if the device in the
figures is turned over, elements described as "below" or "beneath" other
elements or features would then be oriented "above" the other elements or
features. Thus, the term "below" can encompass both an orientation of
above and below. The device may be otherwise oriented (rotated 90 degrees
or at other orientations) and the spatially relative descriptors used
herein interpreted accordingly.

[0064] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of the
present inventive concept. As used herein, the singular forms "a," "an"
and "the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood that
the terms "comprises" and/or "comprising," when used in this
specification, specify the presence of stated features, integers, steps,
operations, elements, and/or components, but do not preclude the presence
or addition of one or more other features, integers, steps, operations,
elements, components, and/or groups thereof.

[0065] Embodiments are described herein with reference to cross-sectional
illustrations that are schematic illustrations of idealized embodiments
(and intermediate structures). As such, variations from the shapes of the
illustrations as a result, for example, of manufacturing techniques
and/or tolerances, are to be expected. Thus, embodiments should not be
construed as limited to the particular shapes of regions illustrated
herein but are to include deviations in shapes that result, for example,
from manufacturing. For example, an implanted region illustrated as a
rectangle will, typically, have rounded or curved features and/or a
gradient of implant concentration at its edges rather than a binary
change from implanted to non-implanted region. Likewise, a buried region
formed by implantation may result in some implantation in the region
between the buried region and the surface through which the implantation
takes place. Thus, the regions illustrated in the figures are schematic
in nature and their shapes are not intended to illustrate the actual
shape of a region of a device and are not intended to limit the scope of
the present inventive concept.

[0066] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill in the art to which this inventive
concept belongs. It will be further understood that terms, such as those
defined in commonly used dictionaries, should be interpreted as having a
meaning that is consistent with their meaning in the context of the
relevant art and will not be interpreted in an idealized or overly formal
sense unless expressly so defined herein.

[0067] Example embodiments will be more clearly understood from the
following detailed description taken in conjunction with the accompanying
drawings. FIGS. 1-4 represent non-limiting, example embodiments as
described herein.

[0068] FIGS. 1 to 3 illustrate a semiconductor package according to
example embodiments of the inventive concepts. FIG. 1 is a
cross-sectional view of a semiconductor package according to example
embodiments of the inventive concepts. FIG. 2 is an enlarged view of a
portion K of FIG. 1, and FIG. 3 is a side view of the semiconductor
device.

[0069] Referring to FIGS. 1 and 2, a stacked semiconductor package 300
according to example embodiments of the inventive concepts includes a
first semiconductor package 100 and a second semiconductor package 200
stacked on the first semiconductor package 100. The first semiconductor
package 100 includes a first printed circuit board 101 and a first
semiconductor device 102 mounted on a surface of the first printed
circuit board 101. The first printed circuit board 101 includes an
interconnection pattern 117 formed inside or outside of the first printed
circuit board 101. When the first semiconductor device 102 is a
semiconductor chip, the first printed circuit board 101 may be a package
substrate, and when the first semiconductor device 102 is a chip scale
package (CSP), the first printed circuit board 101 may be a substrate for
mounting a package.

[0070] In example embodiments of the inventive concepts, the first printed
circuit board 101 may be one selected from the group consisting of a
rigid printed circuit board, a flexible printed circuit board and a
combination thereof.

[0071] The first semiconductor device 102 has a first surface 108 facing
the first board, a second surface 109 that faces the second semiconductor
package 200 and is the opposite side of the first surface, and a first
through electrode 103 formed through the first semiconductor device 102
between the first surface 108 and the second surface 109. The location of
the first through electrode 103 may be determined depending on a design
of an integrated circuit (not shown) formed in the first semiconductor
device 102. When the integrated circuit is formed in the center of the
first semiconductor device 102, the first through electrode 103 may be
formed at an edge of the first semiconductor device 102, or it may be
formed in the center region of the first semiconductor device 102, in
which the integrated circuit (not shown) is not formed. The second
semiconductor package 200 may be electrically connected to the first
semiconductor package 100 through the first through electrode 103. The
first through electrode 103 may be formed at a wafer lever during or
after a process of forming the first semiconductor device 102.

[0072] The first semiconductor device 102 may be electrically connected to
the first printed circuit board 101 in a wire bonding or flip chip
manner. When they are connected in the flip chip manner, as shown in
FIGS. 1 and 2, the first semiconductor device 102 may further include a
flip chip connection pad 115 and a first connection 104 connected to the
flip chip connection pad 115 on the first surface 108 of the first
semiconductor device 102. The first connection 104 may be a solder bump,
a solder ball, etc. The first connection 104 electrically connects the
flip chip connection pad 115 formed on the first semiconductor device 102
to the interconnection pattern 117 formed on the first printed circuit
board 101. Also, the first connection 104 may be formed between the
interconnection pattern 117 and the first through electrode 103. In this
case, the first connection 104 may be in contact with a surface 118 of
the first through electrode 103.

[0073] The first printed circuit board 101 may further include a first
external connection 106 on an opposite surface of the surface on which
the first semiconductor device 102 is mounted, and may be mounted on a
module substrate (not shown) through the first external connection 106.
When the first semiconductor device 102 is a chip scale package, it may
be directly mounted on the module substrate through the first connection
104. In some example embodiments of the inventive concepts, the first
external connection 106 may be a plurality of external terminals. The
external terminals may be one selected from the group consisting of a
solder ball, a conductive bump, a conductive spacer, a pin grid array
(PGA), a lead grid array (LGA), an adhesive conductive film (ACF) and a
combination thereof.

[0074] The second semiconductor package 200 includes a second printed
circuit board 201, and a second semiconductor device 202 mounted on the
second printed circuit board 201. The second semiconductor device 202 may
be electrically connected to the second printed circuit board 201 through
a second connection 204 in a wire bonding or flip chip manner. The second
semiconductor package 200 may further include a second molding structure
205 covering at least a surface of the second semiconductor device 202.
The molding structure may be formed of an epoxy molding compound (EMC).
The second printed circuit board 201 may further include a second
external connection 206 on an opposite surface of the surface on which
the second semiconductor device 202 is mounted, and may be electrically
connected to the first semiconductor package 100 through the second
external connection 206.

[0075] In some example embodiments of the inventive concepts, the second
external connection 206 may be a plurality of conductive patterns. The
conductive patterns may be formed of one selected from the group
consisting of a solder ball, a conductive bump, a conductive spacer, a
PGA, an LGA, an ACF and a combination thereof. The second external
connection 206 may be electrically connected to the first printed circuit
board 101 through the first through electrode 103.

[0076] Referring to FIG. 3, at least one connection land 114 may be formed
on the second surface 109 of the first semiconductor device 102, and the
second external connection 206 may be connected to the connection land
114. The connection land 114 may be formed on the first through electrode
103, and may be a surface 119 exposed on the second surface 109 of the
first semiconductor device 102 of the first through electrode 103.

[0077] FIG. 4 is a plan view of a part of a semiconductor package
according to example embodiments of the inventive concepts.

[0078] Referring to FIG. 4, in a stacked semiconductor package 300
according to example embodiments of the inventive concepts, the
connection land 114 and the flip chip connection pad 115 may be formed in
a region where the first through electrode 103 of the first semiconductor
device 102 is not formed. In this case, a first re-distribution layer 110
electrically connecting the flip chip connection pad 115 or the
connection land 114 to the first through electrode 103 may be formed on
the first surface 108 or the second surface (109 of FIG. 1) of the first
semiconductor device 102. The first re-distribution layer 110 may be
formed using an internal interconnection (not shown) during forming the
first semiconductor device 102 or using an additional process (e.g., an
inkjet printing) after forming the first semiconductor device 102.

[0079] FIGS. 5 to 7 are cross-sectional views of a semiconductor package
according to example embodiments of the inventive concepts.

[0080] Referring to FIG. 5, in a stacked semiconductor package 400
according to example embodiments of the inventive concepts, the first
semiconductor package 100 further includes a first molding structure 105
covering at least one surface of the first semiconductor device 102. When
the first semiconductor device 102 is connected in a wire bonding manner,
the first molding structure 105 may entirely cover the wire (not shown).
When the device 102 is connected in a flip chip manner as illustrated in
FIG. 5, the first molding structure 105 is formed as an underfill to
entirely cover the first connection 104.

[0081] Referring to FIG. 6, the first molding structure 105 may be formed
on the same level as, and/or lower than, the second surface 109 of the
first semiconductor device 102 to expose the second surface 109.

[0082] Referring to FIG. 7, even though the first molding structure 105
covers the second surface 109 of the first semiconductor device 102, an
opening 120 may be formed to expose the connection land 114 or the
surface 118 of the first through electrode 103. As a result, the second
semiconductor package 200 may be connected to the first through electrode
103 through the opening 120. The opening 120 may be formed using a mold
at the same time when the first molding structure 105 is formed or using
laser drilling or etching after forming the first molding structure 105.

[0083] FIGS. 8A, 8B and 8C are a cross-sectional view of a semiconductor
package according to example embodiments of the inventive concepts.

[0084] Referring to FIG. 8A, in a stacked semiconductor package 500
according to example embodiments of the inventive concepts, the first
semiconductor package 100 further includes a third semiconductor device
112 stacked on the first semiconductor device 102. The third
semiconductor device 112 may have a second through electrode 113 formed
through the third semiconductor device 112, and the second semiconductor
package 200 may be electrically connected to the first semiconductor
package 100 through the second through electrode 113. Connecting the
second semiconductor package 200 to the first semiconductor package 100
through the second through electrode 113 may be similar to connecting the
second semiconductor package 200 to the first semiconductor package 100
through the first through electrode 103. When the third semiconductor
device 112 is stacked between the first semiconductor device 102 and the
first printed circuit board 101, the third semiconductor device 112 may
not include the second through electrode 113. In this case, the third
semiconductor device 112 may further include an interconnection
electrically connected to the first through electrode 103 on a surface
facing the first semiconductor device 102. The first semiconductor device
102 may be the same type of a semiconductor device as, or a different
type of a semiconductor device from, the third semiconductor device 112,
and at least one of them may be a logic device. For example, the first
semiconductor device 102 may be a logic chip.

[0085] The second semiconductor package 200 may be formed by stacking a
plurality of second semiconductor devices 202 and 212. The plurality of
second semiconductor devices 202 and 212 may be electrically connected to
the second printed circuit board 201 in a wire bonding manner or a flip
chip manner, and the plurality of second semiconductor devices 202 and
212 may be connected to each other in the same manner or in different
manners. When the plurality of second semiconductor devices 202 and 212
are connected in the wire bonding manner, a second molding structure 205
may be further formed to protect a bonding wire. The plurality of second
semiconductor devices 202 and 212 may be the same type, or different
types, of semiconductor devices, and at least one of them may be a memory
device. For example, the second semiconductor devices 202 and 212 may be
a memory chip.

[0086] Referring to FIG. 8B, a stacked semiconductor package 500A
according to example embodiments of the inventive concepts may include
the first semiconductor package 100 and the second semiconductor package
200. The second external connection 206 (e.g., a plurality of conductive
patterns) may be provided between the first semiconductor package 100 and
the second semiconductor package 200. The first semiconductor package 100
may include the first printed circuit board 101, an interposer 102i and
the third semiconductor device 112.

[0087] The interposer 102i may be interposed between the first printed
circuit board 101 and the third semiconductor device 112. The interposer
102i may include one selected from the group consisting of a glass plate,
a semiconductor substrate (e.g., a silicon wafer), a printed circuit
board and a combination thereof. A plurality of front pads 102F may be
disposed on a first surface of the interposer 102i. A plurality of back
pads 102B may be disposed on a second surface of the interposer 102i. The
first surface may face the second surface. Each of the front pads 102F
may be electrically connected to the corresponding one of the back pads
102B.

[0088] Each of the front pads 102F may be electrically connected to the
corresponding one of the second through electrodes 113 penetrating the
third semiconductor device 112. In this case, the front pads 102F may be
arranged to have a first pitch P3 corresponding to the second through
electrodes 113. Each of the back pads 102B may be electrically connected
to the corresponding one of the interconnection patterns 117 via the
first connection 104. In this case, the back pads 102B may be arranged to
have a second pitch P4 different from the first pitch P3. The first pitch
P3 may be smaller than the second pitch P4.

[0089] In example embodiments, the first pitch P3 may be equal to, or
greater than, the second pitch P4.

[0090] Referring to FIG. 8c, a stacked semiconductor package 500B
according to example embodiments of the inventive concepts may include
the first semiconductor package 100 and the second semiconductor package
200. The second external connection 206 (e.g., a plurality of conductive
patterns) may be provided between the first semiconductor package 100 and
the second semiconductor package 200. The first semiconductor package 100
may include the first printed circuit board 101, the first semiconductor
device 102 and an interposer 112i.

[0091] The interposer 112i may be interposed between the first
semiconductor device 102 and the second printed circuit board 201. A
plurality of front pads 112F may be disposed on a first surface of the
interposer 112i. A plurality of back pads 112B may be disposed on a
second surface of the interposer 112i. The first surface may face the
second surface. Each of the front pads 112F may be electrically connected
to the corresponding one of the back pads 112B.

[0092] Each of the front pads 112F may be electrically connected to the
second printed circuit board 201 via the second external connection 206.
In this case, the front pads 112F may be arranged to have a third pitch
P5 corresponding to the second external connection 206. Each of the back
pads 112B may be electrically connected to the corresponding one of the
first through electrodes 103 penetrating the first semiconductor device
102. In this case, the back pads 112B may be arranged to have a fourth
pitch P6 different from the third pitch P5. The third pitch P5 may be
greater than the fourth pitch P6.

[0093] In some embodiments, the third pitch P5 may be equal to, or smaller
than, the fourth pitch P6.

[0094] FIG. 9 is a cross-sectional view of a semiconductor package
according to example embodiments of the inventive concepts.

[0095] Referring FIG. 9, in a stacked semiconductor package 600 according
to example embodiments of the inventive concepts, the first semiconductor
package 100 further includes a first through silicon via 107 formed
through the first molding structure 105. The second semiconductor package
200 may be electrically connected to the first semiconductor package 100
through the first through silicon via 107. The first through silicon via
107 may be exposed on a surface of the first molding structure 105 from
the interconnection pattern 117 formed on the first printed circuit board
101 through the first molding structure 105. The first through silicon
via 107 may be formed by forming a through hole (not shown) at the same
time when the first molding structure 105 is formed using a mold, or
after the first molding structure 105 is formed, using laser drilling or
etching, and filling the through hole with a conductive material (e.g., a
metal or polysilicon). Alternatively, the first through silicon via 107
may be formed by forming a conductive bar (not shown) on the first
printed circuit board 101 and forming the first molding structure 105. In
this case, the second external connection 206 may be interposed between
the first through silicon via 107 and the second semiconductor package
200 to electrically connect the second semiconductor package 200 to the
first through silicon via 107.

[0096] FIG. 10 is a modified embodiment of FIG. 9.

[0097] Referring to FIG. 10, in a stacked semiconductor package 600-1
according to example embodiments of the inventive concepts, the first
semiconductor package 100 may be electrically connected to the second
semiconductor package 200 using a solder ball 107-1. Here, the height of
the solder ball 107-1 may be higher than that of the second external
connection 206, or the solder ball may be formed by stacking (not shown)
a plurality of solder balls or a plurality of bumps. The electrical
connection between the first semiconductor package 100 and the second
semiconductor package 200 may not be limited to example embodiments of
the inventive concepts. When the first printed circuit board 101 and/or
the second printed circuit board 201 are formed of a rigid printed
circuit board, the first printed circuit board 101 and/or the second
printed circuit board 201 may be formed to be upwardly or downwardly
bent.

[0098] FIGS. 11 and 12 are cross-sectional views of a semiconductor
package according to example embodiments of the inventive concepts.

[0099] Referring to FIG. 11, a stacked semiconductor package 700 according
to example embodiments of the inventive concepts further includes a third
molding structure 305 interposed between the first semiconductor package
100 and the second semiconductor package 200. The third molding structure
305 may cover the second external connection 206 and fill a gap between
the first semiconductor package 100 and the second semiconductor package
200. Here, a side of the third molding structure 305 may be aligned with
a side of the first molding structure 105 and/or the second molding
structure 205.

[0100] The third molding structure 305 may be formed by filling the gap
between the first semiconductor package 100 and the second semiconductor
package 200 after stacking the first semiconductor package 100 and the
second semiconductor package 200, or may be formed at the same time when
the first molding structure 105 and the second molding structure 205 are
formed.

[0101] When the first semiconductor package 100 and the second
semiconductor package 200 have a package-in-package structure, the second
semiconductor package 200 may be stacked on the first semiconductor
device 102, and a molding structure that simultaneously covers the first
semiconductor package 100 and the second semiconductor package 200 may be
formed. In this case, the first semiconductor package 100 may be greater
than the second semiconductor package 200, and the first semiconductor
device 102 and the second semiconductor device 202 may be stacked to face
each other.

[0102] Referring to FIG. 12, the third molding structure 305 may be formed
to partially fill the gap between the first semiconductor package 100 and
the second semiconductor package 200. Here, the third molding structure
305 may cover the second external connection 206.

[0103] FIGS. 13 to 15 are cross-sectional views and a partial plan view of
a semiconductor package according to example embodiments of the inventive
concepts.

[0104] Referring to FIG. 13, in a stacked semiconductor package 800
according to example embodiments of the inventive concepts, the first
semiconductor package 100 further includes a bonding wire 111 that
electrically connects the first semiconductor device 102 to the first
printed circuit board 101. The first printed circuit board 101 further
includes a bond pad 116 on the second surface 109, and the bonding wire
111 that electrically connects the bond pad 116 to a bond finger 121
formed on the first printed circuit board 101. A part of signals
transmitted to or from the second semiconductor package 200 may be
transmitted to the first semiconductor package 100 through the bonding
wire 111, and another part of the signals may be transmitted to the first
semiconductor package 100 through the first through electrode 103.

[0105] Referring to FIG. 14, the first semiconductor device 102 may
further include a second re-distribution layer 122 connecting the
connection land 114 to the bond pad 116 on the second surface 109. The
bond pad 116 may be formed at the outside of the second surface 109 to
shorten the length of the bonding wire 111 such that electrical
characteristics are enhanced and a defect in connection may be prevented.
Here, the connection land 114 for the connection to the second
semiconductor package 200 may be formed in the middle of the second
surface, and signals may be transmitted from the connection land 114 to
the bond pad 116 and the bonding wire 111 through the second
re-distribution layer 122. For example, a signal required for driving the
semiconductor device in common may be transmitted through the first
through electrode 103, and a signal individually required for driving the
second semiconductor devices 202 may be transmitted to the second
semiconductor devices 202 through the bonding wire 111. The signal
required in common may be a power or ground signal.

[0106] Referring to FIG. 15, when at least one first semiconductor device
102 and the third semiconductor device 112 are stacked on the first
semiconductor package 100, the bonding wire 111 connecting the at least
one first semiconductor device 102 to the first printed circuit board 101
may be formed. For example, the first semiconductor device 102 formed at
a lower part may include the bond pad 116 at a surface facing the third
semiconductor device 112 formed at an upper part. The bonding wire 111
may transmit a signal of the third semiconductor device 112 formed at the
upper part, or a signal of the second semiconductor package 200
transmitted through the second through electrode 113 formed in the third
semiconductor device 112. As another example, when the third
semiconductor device 112 is stacked between the first semiconductor
device 102 and the first printed circuit board 101, the third
semiconductor device 112 may not include the second through electrode
113. In this case, the third semiconductor device 112 may include the
bond pad 116 on a surface facing the first semiconductor device 102
formed at an upper part. The bonding wire 111 may be formed to connect
the third semiconductor device 112 to the first printed circuit board
101, and may be electrically connected to the first through electrode 103
formed in the first semiconductor device 102.

[0107] FIGS. 16 to 18 illustrate a method of fabricating a semiconductor
package according to example embodiments of the inventive concepts.

[0108] Referring to FIG. 16, the first semiconductor package 100 is formed
by mounting the first semiconductor device 102 on the first printed
circuit board 101. The first semiconductor device 102 is formed by
forming an integrated circuit (not shown) and the first through electrode
103 on a wafer and sawing the wafer into discrete devices. Before or
after forming the integrated circuit, or while the integrated circuit is
formed, the first through electrode 103 may be formed.

[0109] The first semiconductor device 102, which is fabricated as a result
of the process, is electrically connected to the first printed circuit
board 101. The first printed circuit board 101 may be a printed circuit
board. The electrical connection may be made in a bonding or flip chip
manner. When the connection is made in a wire bonding manner, the first
semiconductor device 102 may be fixed to a surface of the first printed
circuit board 101 using an adhesive (not shown), and a bonding pad (see
element 116 of FIG. 15) formed on a surface of the first semiconductor
device 102 may be connected to a bond finger (see element 121 of FIG. 15)
formed on a surface on which the first semiconductor device 102 of the
first printed circuit board 101 is mounted using a metal wire (not
shown). A first molding structure (see element 105 of FIG. 15)
surrounding the metal wire may be further formed to protect the metal
wire. Even when the connection is made in a wire bonding manner, the
first connection 104 electrically connected to the first through
electrode 103 may be formed on a surface of the first semiconductor
device 102 using the discrete device before sawing. The first connection
104 electrically connects the second semiconductor package 200 to the
first printed circuit board 101. For example, the first connection 104
may be a solder bump, a solder ball or an ACF. When the connection is
made in a flip chip manner, the first connection 104 electrically
connected to the first through electrode 103 may be formed on a surface
of the wafer using the discrete device before sawing. The first
semiconductor device 102 and the second semiconductor package 200 are
electrically connected to the first printed circuit board 101 through the
first connection 104. The first connection 104 formed in the first
semiconductor device 102 may be interposed between the first
semiconductor device 102 and the first printed circuit board 101, and the
first semiconductor device 102 may be physically/electrically connected
to the first printed circuit board 101 through a reflow process. Then,
the first molding structure 105 surrounding the first connection 104 may
be further formed through an underfill process.

[0110] An integrated circuit formed in the first semiconductor device 102
may be mounted to face the first printed circuit board 101 or to face the
opposite direction. When the first semiconductor device 102 is a chip
scale package, it may be directly mounted on a module substrate (not
shown), not on the first printed circuit board 101. The first
semiconductor device 102 may be a logic chip.

[0111] The first external connection 106 of the first printed circuit
board 101 may be formed before/after mounting the first semiconductor
device 102. The first external connection 106 may be a solder bump, a
solder ball, etc., and may be connected to a module substrate (not shown)
in a similar manner to that of mounting the first semiconductor device
102 on the first printed circuit board 101.

[0112] Referring to FIG. 17, the second semiconductor package 200 is
fabricated by mounting the second semiconductor devices 202 on the second
printed circuit board 201. A method of fabricating the second
semiconductor package 200 is similar to that of fabricating the first
semiconductor package 100, and thus only differences will be described
below.

[0113] With respect to the second semiconductor device 202, a plurality of
second semiconductor devices 202 and 212 are connected to the second
printed circuit board 201 through a second connection 204. The second
connection 204 may be a through electrode (not shown) or a bonding wire,
and the plurality of second semiconductor devices 202 and 212 may be
stacked using it. The second semiconductor devices 202 and 212 may be the
same type, or different types of semiconductor devices. At least one of
the second semiconductor devices 202 and 212 may be a memory device.

[0114] Referring to FIG. 18, the first semiconductor package 100 and the
second semiconductor package 200 are stacked to fabricate a stacked
semiconductor package 300. The first semiconductor package 100 and the
second semiconductor package 200 are respectively fabricated and tested,
and only non-defective products are used. This enables efficient
fabrication of the stacked package 300. The second external connection
206 of the second semiconductor package 200 is arranged on the connection
land 114 formed in the first semiconductor device 102 or the first
through silicon via (see element 107 of FIG. 9) to be stacked. As a
result, the second semiconductor package 200 may be electrically
connected to the first semiconductor package 100 to be stacked.

[0115] FIG. 19 is a cross-sectional view of a semiconductor package
according to example embodiments of the inventive concepts.

[0116] Referring to FIG. 19, a semiconductor package 900 according to
example embodiments of the inventive concepts includes a lower package
100, an upper package 200 attached to the lower package 100, and a
plurality of conductive patterns 206 formed between the lower package 100
and the upper package 200. The lower package 100 has a lower substrate
101, a first semiconductor chip 102 mounted on the lower substrate 101,
and a plurality of through electrodes 103 electrically connected to the
lower substrate 101 through the first semiconductor chip 102. The
conductive patterns 206 are connected to the through electrodes 103, and
all of the conductive patterns 206 are arranged on the first
semiconductor chip 102.

[0117] The lower package 100, the upper package 200 and the conductive
patterns 206 may correspond to the first semiconductor package 100, the
second semiconductor package 200 and the second external connection 206
described in FIGS. 1 to 18. The lower substrate 101, the first
semiconductor chip 102 and the through electrodes 103 may correspond to
the first printed circuit board 101, the first semiconductor device 102
and the first through electrode 103 described in FIGS. 1 to 18. Also, the
lower package 100 may include a first connection 104, a first molding
structure 105, a connection land 114 and internal interconnections 117.
Openings 120 penetrating the first molding structure 105 may be provided
on the through electrodes 103. The internal interconnections 117 may
correspond to the interconnection patterns 117 described with reference
to Embodiments 1 to 8.

[0118] In other example embodiments of the inventive concepts, the first
molding structure 105 may be formed to expose a surface of the first
semiconductor chip 102, and to fill a gap between the first semiconductor
chip 102 and the lower substrate 101. In still other example embodiments
of the inventive concepts, the first molding structure 105 may be
omitted.

[0119] The lower substrate 101 may be formed of one selected from the
group consisting of a rigid printed circuit board, a flexible printed
circuit board and a combination thereof. For example, the lower substrate
101 may be a multi-layer printed circuit board in which prepreg
(alternatively known as "pre-impregnated materials") and Cu foil are
alternately and repeatedly stacked. The lower substrate 101 may include
the internal interconnections 117 (e.g., a ball land, a bond finger, an
interconnection for interlayer connection and a tab). Some of the
internal interconnections 117 may be electrically connected to the
through electrode 103 or the first semiconductor chip 102 through the
first connection 104.

[0120] The upper package 200 may include an upper substrate 201, and a
second semiconductor chip 202 mounted on the upper substrate 201. The
upper substrate 201 and the second semiconductor chip 202 may correspond
to the second printed circuit board 201 and the second semiconductor
device 202 described in FIGS. 1 to 18. The upper substrate 201 may be
formed of one selected from the group consisting of a rigid printed
circuit board, a flexible printed circuit board and a combination
thereof. The second semiconductor chip 202 may be electrically connected
to the upper substrate 201 using a second connection 204. The second
connection 204 may be formed of one selected from the group consisting of
a bonding wire, a beam lead, a conductive tape and a combination thereof.
Further, the upper package 200 may further include a second molding
structure 205. Moreover, a third molding structure 305 may be provided in
a gap between the lower package 100 and the upper package 200. The third
molding structure 305 may cover the conductive patterns 206.

[0121] The conductive patterns 206 may be formed between the upper
substrate 201 and the first semiconductor chip 102. The second
semiconductor chip 202 may be electrically connected to the lower
substrate 101 via the second connection 204, the upper substrate 201, the
conductive patterns 206, the connection land 114, the through electrodes
103 and the first connection 104. The first semiconductor chip 102 may be
electrically connected to the lower substrate 101 via the first
connection 104. That is, the first semiconductor chip 102 and the second
semiconductor chip 202 may be electrically connected to each other via
the lower substrate 101 or the through electrodes 103. The conductive
patterns 206 may be formed of one selected from the group consisting of a
solder ball, a conductive bump, a conductive spacer, a PGA, an LGA, an
ACF and a combination thereof.

[0122] A plurality of external terminals 106 may be formed on a surface of
the lower substrate 101. The external terminals 106 may correspond to the
first external connection 106 described in FIGS. 1 to 18. The external
terminals 106 may be electrically connected to the internal
interconnections 117. The external terminals 106 may be electrically
connected to the first semiconductor chip 102 and the second
semiconductor chip 202 via the internal interconnections 117, the first
connection 104, the through electrodes 103, and the conductive patterns
206. The external terminals 106 may be formed of one selected from the
group consisting of a solder ball, a conductive bump, a conductive
spacer, a PGA, an LGA, an ACF and a combination thereof.

[0123] As described above, according to example embodiments of the
inventive concepts, all of the conductive patterns 206 may be arranged on
the first semiconductor chip 102. That is, a detour pattern 206' for
connecting the upper package 200 to the lower package 100 and the
external terminals 106 is not required. In general, when the detour
pattern 206' is used, the lower substrate 101 should have an elongated
size at an external side of the first semiconductor chip 102. Therefore,
the semiconductor package 900 according to example embodiments of the
inventive concepts has an advantageous structure in terms of compact
size.

[0124] In some example embodiments of the inventive concepts, the lower
substrate 101 may have a first width D11, the first semiconductor chip
102 may have a second width D12, and the upper substrate 201 may have a
third width D21. When the first molding structure 105 is formed to
surround the first semiconductor chip 102, the lower substrate 101 may
have a greater width than the first semiconductor chip 102. In this case,
the first width D11 may be smaller than a value in which 100 μm is
added to the second width D12. In other example embodiments of the
inventive concepts, the first width D11 may be the same as the second
width D12. That is, the first width D11 of the lower substrate 101 may be
substantially the same as the first semiconductor chip 102.

[0125] Furthermore, the third width D21 may be equal to, or greater than,
the first width D11. That is, the third width D21 of the upper substrate
201 may have the same width as, or a greater width than, the lower
substrate 101. In other example embodiments of the inventive concepts,
the third width D21 may be equal to, or greater than, the second width
D12. That is, the upper package 200 may have the same width as, or a
greater width than, the first semiconductor chip 102.

[0126] In still other example embodiments of the inventive concepts, the
third width D21 may be equal to, or smaller than, the first width D11.
That is, the third width D21 of the upper substrate 201 may have the same
width as, or a smaller width than, the lower substrate 101. In yet other
example embodiments of the inventive concepts, the third width D21 may be
equal to, or smaller than, the second width D12. That is, the upper
package 200 may have the same width as, or a smaller width than, the
first semiconductor chip 102.

[0127] The external terminals 106 may be arranged to have a first pitch
P1, and the conductive patterns 206 may be arranged to have a second
pitch P2 different from the first pitch P1. The conductive patterns 206
may be formed to have the size and interval corresponding to the through
electrodes 103. The conductive patterns 206 may be smaller than the
external terminals 106. The second pitch P2 may be smaller than the first
pitch P1.

[0128] FIG. 20 is a perspective view of an electronic device including a
semiconductor package according to example embodiments of the inventive
concepts.

[0129] Referring to FIG. 20, a semiconductor package according to example
embodiments of the inventive concepts may be applied to an electronic
device 1000 (e.g., a cellular phone). The semiconductor package according
to example embodiments of the inventive concepts is excellent in terms of
compact size and performance improvement, and thus is advantageous for
the light, thin, short and small electronic device 100 capable of
simultaneously implementing various functions. The electronic device may
not be limited to the cellular phone illustrated in FIG. 20, and may
include various electronic devices (e.g., mobile electronic devices,
laptop computers, portable computers, portable media players (PMP), MP3
players, camcorders, web tablets, wireless telephones, navigations,
personal digital assistant (PDA), etc.).

[0130] FIG. 21 is a system block diagram of an electronic device employing
a semiconductor package according to example embodiments of the inventive
concepts.

[0131] Referring to FIG. 21, the above-described semiconductor packages
100 to 900 may be applied to an electronic system 1100. The electronic
system 1100 may include a body 1110, a micro processor unit 1120, a power
unit 1130, a function unit 1140 and a display controller unit 1150. The
body 1110 may includes a set board formed of a printed circuit board
therein, and the micro processor unit 1120, the power unit 1130, the
function unit 1140 and the display controller unit 1150 may be mounted on
the body 1110. A display unit 1160 may be disposed in or on a surface of
the body 1110. The display unit 1160 may display an image processed by
the display controller unit 1150 disposed on the surface of the body
1110.

[0132] The power unit 1130 is supplied with a set voltage from an external
battery (not shown), and divides the voltage into a required voltage
level to supply to the micro processor unit 1120, the function unit 1140
and the display controller unit 1150. The micro processor unit 1120
receives a voltage from the power unit 1130 to control the function unit
1140 and the display unit 1160. The function unit 1140 may perform
various functions. For example, when the electronic device 1000 is a
cellular phone, the function unit 1140 may include various components
capable of functioning as a cellular phone (e.g., dialing, outputting an
image on the display unit 1160 as a result of communication with an
external apparatus 1170, and outputting voice through a speaker), and
when a camera is formed, the function unit 1140 may be a camera image
processor. For example, when the electronic device 1000 is connected to a
memory card for capacity expansion, the function unit 1140 may be a
memory card controller. The function unit 1140 may transmit and receive a
signal to/from the external apparatus 1170 through a wired or wireless
communication unit 1180. For example, when the electronic device 1000
requires a universal serial bus (USB) for capacity expansion, the
function unit 1140 may be an interface controller. The semiconductor
packages 100 to 900 according to example embodiments of the inventive
concepts may be used for at least one of the micro processor unit 1120
and the function unit 1140. The first external connection 106 of the
first printed circuit board 101 may be connected to a bonding pad formed
in the body 1110.

[0133] According to example embodiments of the inventive concepts, in a
stacked package, upper and lower packages can be electrically connected
in a semiconductor device region, so that the size of a package can be
reduced, and high integration density can be implemented. Further, a gap
between the upper and lower packages is not necessary, so that a micro
pitch of the upper package can be implemented. Moreover, the upper and
lower packages are electrically connected through a through electrode, so
that electrical characteristics can be enhanced. Moreover, a
non-defective package that is tested is selected to be stacked, so that
the yield can be improved.

[0134] The inventive disclosure may be widely and usefully used in the
field of the manufacturing industry manufacturing electronic products
using semiconductor packages and communication industry as well as a
semiconductor industry manufacturing a semiconductor package.

[0135] The foregoing is illustrative of embodiments and is not to be
construed as limiting thereof. Although a few embodiments have been
described, those skilled in the art will readily appreciate that many
modifications are possible in embodiments without materially departing
from the novel teachings and advantages. Accordingly, all such
modifications are intended to be included within the scope of this
inventive concept as defined in the claims. It is to be understood that
the foregoing is illustrative of various embodiments and is not to be
construed as limited to the specific embodiments disclosed, and that
modifications to the disclosed embodiments, as well as other embodiments,
are intended to be included within the scope of the appended claims.