Abstract : Methods are considered for increasing the stability of photoconverters operating in the conditions of hard radiation action. One of the methods in question is thermal annealing of the irradiated devices. A change is considered in the process of annealing of the spectral distribution of photosensitivity and the diffusion length of the minority carriers in the base of irradiated n-p type photoconverters. Another possibility for assuring radiation resistance is doping them with lithium. The results are presented of irradiation and low-temperature annealing of p-a type photoconverters with an impurity of lithium and various concentrations of oxygen. In the case when the content of oxygen in silicon is small ( < 10 to the 17th power/cc) devices with an impurity of lithium reveal an extremely high resistance to irradiation. The ability of lithium to neutralize recombination centers in silicon having a nonradiation origin is also shown. (Author)