Summary: DescriptionThe 2SC2000 is designed for use in AM/RF stage of CAR RADIO and general purpose applications.
Features of the 2SC2000 are:(1)high electrostatic-dischange-resistance(E-B reverse bias) ESDR 1:TYP.500V(C=1000 pF),ESDR 2:TYP.1600V(C=100pF);(2)low fT,Cc`rb'b and NF fT:TYP.70MHz(VCE=6.0V,IE=...

Summary: DescriptionThe 2SC2001 is designed for use in output stage of portable RADIO and cassette type tape recorder,general purpose applications.
Features of the 2SC2001 are:(1)high total power dissipation,PT:600mW;(2)high hFE and low VCE(sat) hFE(IC-100mA):200 TYP,VCE(sat)(700mA):0.20V TYP.
The absolu...

Summary: DescriptionThe 2SC2002 is designed for use in driver stage of high voltage audio equipments.
Features of the 2SC2002 are:(1)high total power dissipation,PT:600mW;(2)high hFE and high voltage, hFE(IC=500mA):200 TYP,VCEO:60V.
The absolute maximum ratings of the 2SC2002 can be summarized as:(1):the...

Summary: DescriptionThe 2SC2003 is designed for use in driver stage of high voltage audio equipments.
Features of the 2SC2003 are:(1)high total power dissipation,PT:600mW;(2)high hFE and high voltage, hFE(IC=50mA):200 TYP,VCEO:80V.
The absolute maximum ratings of the 2SC2003 can be summarized as:(1):the ...

Summary: DescriptionThe 2SC2020 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)high power gain: 14 dB min;(2)good linearity;(3)large surge capability;(4)high reliability.
The abs...

Summary: DescriptionThe 2SC2021 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)low collector saturation voltage: VCE(sat) = 0.04 V (approx.) at 10 mA;(2)low output capacitance: Co...