The interfacial reaction between 42Sn-58Bi solder (in wt. unless specified otherwise) and electroless Ni-P/immersion Au has been investigated before and after thermal aging, with a focus on formation and growth of an intermetallic compound (IMC) layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 (bare Ni), 0.1, and was plated on the thick electroless Ni-P (P) layer. Then, the 42Sn-58Bi solder balls were fabricated on three different UBM structures by screen-printing and pre-reflow. The layer (IMC1) was formed at the joint interface after pre-reflow for all the three UBM structures. On aging at , a quaternary phase (IMC2) was observed above the layer in the Au-containing UBM structures, which was identified as (in at.). The thick layer deteriorated the integrity of the solder joint and the shear strength of the solder bump was decreased by about compared with non-aged joints

A compact antenna switch module for GSM/DCS dual band applications based on multilayer low temperature co-fired ceramic (LTCC) substrate is presented. Its size is and insertion loss is lower than 1.0 dB at Rx mode and 1.2 dB at Tx mode. To verify the stability of the developed module to the process window, each block that is diplexer, LPF's and bias circuit is measured by probing method in the variation with the thickness of ceramic layer and the correlation between each block is quantified by calculating the VSWR In the mean while, two types of bias circuits -lumped and distributed - are compared. The measurement of each block and the calculation of VSWR give good information on the behavior of full module. The reaction of diplexer to the thickness is similar to those of LPF's and bias circuit, which means good relative matching and low value of VSWR, so total insertion loss is maintained in quite wide range of the thickness of ceramic layer at both band. And lumped type bias circuit has smaller insertion itself and better correspondence with other circuit than distributed stripline structure. Evaluated ceramic module adopting lumped type bias circuit has low insertion loss and wider stability region of thickness over than 6um and this can be suitable for the mass production. Stability characterization by probing method can be applied widely to the development of ceramic modules with embedded passives in them.

Solder joints in microelectronic devices are frequently operated at an elevated temperature in service. They also experience plastic deformation caused by temperature excursion and difference in thermal expansion coefficients. Deformed solders can go through a recovery and recrystallization process at an elevated temperature, which would alter their microstructure and mechanical properties. In this study, to predict the changes in mechanical properties of Pb-free solder joints at high temperatures, the high temperature microhardness of several Pb-free and composite solders was measured as a function of temperature, deformation, and annealing condition. Solder alleys investigated include pure Sn, Sn-0.7Cu, Sn-3.5Ag, Sn-3.8Ag-0.7Cu, Sn-2.8Ag-7.0Cu (composite), and Sn-2.7Ag-4.9Cu-2.9Ni (composite). Numbers are all in wt. unless specified otherwise. Solder pellets were cast at two cooling rates (0.4 and /s). The pellets were compressively deformed by and and annealed at for 2 days. The microhardness was measured as a function of indentation temperature from 25 to . Their microstructure was also evaluated to correlate with the changes in microhardness.

Electroplating copper is the important role in formation of 3D stacking interconnection in SiP (System in Package). The I-V characteristics curves are investigated at different electrolyte conditions. Inhibitor and accelerator are used simultaneously to investigate the effects of additives. Three different sizes of via are tested. All via were prepared with RIE (reactive ion etching) method. Via's diameter are 50, 75, and the height is . Inside via, Ta was deposited for diffusion barrier and Cu was deposited fer seed layer using magnetron sputtering method. DC, pulse and pulse revere current are used in this study. With DC, via cannot be filled without defects. Pulse plating can improve the filling patterns however it cannot completely filled copper without defects. Via was filled completely without defects using pulse-reverse electroplating method.

Although it was recently observed that severe fatigue damage was formed in Al or Cu interconnects due to the cyclic temperatures generated by Joule heating of the metal lines by the passage of alternating currents (AC), AC loading frequency effect on the damage evolution characteristics are not known so far. This work focused on the effect of AC loading frequency (100 Hz vs. 10 kHz) on the thermo-mechanical fatigue characteristics by using polycrystalline sputtered Cu lines with temperature cycles with amplitudes from 100 to . It was consistently observed that higher loading frequency accelerated damaged grain growth and led to earlier failure irrespective of Cu grain sizes. The frequency effect is believed to result from differences in the concentration of defects created by the deformation-induced motion of dislocations to the grain boundaries.

Nanomaterial was synthesized by hydrolysis and condensation process using 2-propanol(2-PrOH) and was characterized by FT-IR, DSC, XRD and FE-SEM. FT-IR spectra were measured to investigate Ti-0-Si absorption peak. DSC thermal analysis results appllied to Ozawa equation were used to calculate to activation energy of crystallization. It was found that the changes of X-ray diffraction patterns and FWHM obtained XRD measurement depended on calcination temperature. In FE-SEM analysis, particle size changed by quantity changes of Ti-alkokide.

We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates.

In this report, Polymer light emitting diodes (PLEDs) with an ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared by spin coating method on the glass substrate patterned ITO (indium tin oxide), using PEDOT:PSS(poly(3,4=ethylenedioxythiophene):poly(styrene sulfolnate)) as the hole transfer material and MEH-PPV(poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenvinylene)) having a different concentration (0.1, 0.3, 0.5, 0.7, 0.9, 1.5 wt) as the emitting material. The electrical and optical properties of the prepared PLED samples were investigated. The good electrical and optical properties were observed for the PLED samples with a MEH-PPV concentration ranging from 0.5 to . However, the current and luminance values for PLED sample with of MEH-PPV decreased greatly. The maximum luminance and light efficiency for the PLEDs with concentration of MEH-PPV were and 4.90 Im/W at 9 V, respectively. The emission spectrums were found to be in wavelength showing orange color.

Glass formation, thermal property and crystallization behavior were investigated in with fresnoite() crystal by replacement BaO for . As x(0x20) contents increased, glass formation became easy, and crystallization temperature moved on to the low temperature. Crystal phase of the was confirmed by XRD, and the replaced x was not effected on the formation of new crystals. The kinetics of crystallization of fresnoite were studied by applying the DTA measurements carried out at different heating rates. The average avrami exponent(n) and activation energy were changed , according to x contents, respectively. The replaced x improved the orientation of crystal growth.

Smaller size and higher integration of electronic components make smaller gap between metal conducting layers in electronic package. Under harsh environmental conditions (high temperature/humidity), electronic component respond to applied voltages by electrochemically ionization of metal and metal filament formation, which lead to short failure and this phenomenon is termed electrochemical migration(ECM). In this work, printed circuit board(PCB) is used for determination of ECM characteristics. Copper leads of PCB are soldered by eutectic solder alloys. Insulation breakdown time is measured at . CAF is the main mechanism of ECM at PCB. Pb is more susceptible to CAF rather than Sn, which corresponds well to the corrosion resistance of solder materials in aqueous environment. Polarization tests in chloride or chloride-free solutions fur pure metal and eutectic solder alloys are performed to understand ECM characteristics. Lifetime results show well defined log-normal distribution which resulted in biased voltage factor(n=2) by voltage scaling. Details on migration mechanism and lifetime statistics will be presented and discussed.

A novel, simple and broadband bit X-band phase shifter was proposed and fabricated in a standard micromachining process. It is composed of two parallel-coupled lines; one of which is shorted and the other is grounded. Design equations for the proposed bit phase shifter are derived by the method of even and odd mode analysis. Based on design equations, bit phase shifter was designed and fabricated to operate from 7 to 13 GHz with of phase deviation.

We fabricated thin films of polystyrene-block-poly(methyl methacrylate)(PS -b-PMMA) on the self-assembled monolayers(SAM) of 3-(p-methoxyphenyl)propyltrichlorosilane(MPTS) on silicon wafers. Cylindrical nanodomains of PMMA or PS were oriented perpendicular to the surface of silicon wafers due to the neutral affinity of the SAM to PS and PMMA blocks. By selective removal of the PMMA block with UV irradiation and washing, nanoporous films and nanorod assemblies were produced. The nanoporous film can be used for a nanolithographical mask.