The TrenchFET Gen IV technology of the SiZ340DT utilizes a very high-density design to reduce on-resistance without significantly increasing the gate charge, minimizing conduction losses and reducing total power loss for higher power output. As a result, the low-side Channel 2 MOSFET of the SiZ340DT offers a low on-resistance of 5.1 mΩ at a 10 V gate drive and 7.0 mΩ at 4.5 V. The high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V.

The device released today is optimized for synchronous buck designs in "cloud computing" infrastructures, servers, telecommunication equipment, and various client-side electronic devices and mobile computing applications. The intended DC/DC blocks include system auxiliary power rails in servers, computers, notebook computers, graphic cards, gaming consoles, storage arrays, telecom equipment, DC/DC bricks, and POL converters. The SiZ340DT can also be used in DC/DC conversion circuitry that supplies power to FPGAs.

In these applications, the device maintains a low gate charge of 5.6 nC for the Channel 1 MOSFET and 10.1 nC for Channel 2. The resulting low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — reduces conduction and switching losses to improve total system efficiency. With higher efficiency, the SiZ340DT can run 30 % cooler than previous-generation devices at the same output load, or provide increased power density.

For typical DC/DC topologies with 10 A to 15 A output current and an output voltage below 2 V, the compact 3 mm by 3 mm footprint area of the SiZ340DT saves up to 77 % PCB space compared with using discrete solutions, such as a PowerPAK® 1212-8 MOSFET for the high-side and a PowerPAK SO-8 for the low side. Reducing switching losses, the device allows higher switching frequencies beyond 450 kHz to shrink the PCB size, without sacrificing efficiency, by enabling the use of smaller inductors and capacitors. In addition, by providing higher performance than multiple paralleled previous-generation devices, the MOSFET can potentially reduce the overall component count and simplify designs.

The SiZ340DT is 100 % Rg- and UIS-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.

Device Specification Table:

Channel

1

2

VDS (V)

30

30

VGS (V

20

20

RDS(on) max. (mΩ) @

10 V

9.5

5.1

4.5 V

13.7

7.0

Qg (Typ.) @ 4.5 V (nC)

5.6

10.1

ID (A) @

TA = 25 °C

15.6

22.6

TA = 70 °C

12.4

18.1

Samples and production quantities of the SiZ340DT are available now, with lead times of 14 to 16 weeks for large orders. Pricing for U.S. delivery only starts at $0.32 per piece in 10,000-piece quantities.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

TrenchFET, PowerPAIR and PowerPAK are registered trademarks of Siliconix incorporated.