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This paper investigates the radiation tolerance of 28-nm bulk ${n}$ and ${p}$ MOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex interplay of oxide and interface charge trapping relevant to the gate-related dielectrics and the shallow trench isolation. The narrowest/longest...

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