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Electron-Beam Activated Linewidth Measurement Test Site

Publishing Venue

IBM

Related People

Jenkins, KA: AUTHOR

Abstract

The width of conducting lines on VLSI circuits after processing is a parameter which must be measured, as it may differ from the prescribed lithographic dimension. The width can be measured by careful electron microscopy, or by using vernier structures and optical microscopy.

Country

United States

Language

English (United States)

This text was extracted from an ASCII text file.

This is the abbreviated version, containing approximately
62% of the total text.

Electron-Beam Activated Linewidth Measurement Test Site

The width of
conducting lines on VLSI circuits after processing
is a parameter which must be measured, as it may differ from the
prescribed lithographic dimension. The
width can be measured by
careful electron microscopy, or by using vernier structures and
optical microscopy.

The test site
disclosed here uses a combination of the vernier
concept, and the concept of electron-beam induced voltage, to make a
structure in which the vernier contact is distinguished by high
contrast, when viewed in a scanning electron microscope (SEM).

The idea of
electron-beam-induced voltage contrast is that a
conductor scanned by an electron beam in an SEM will acquire a
voltage if it is not grounded. Thus,
grounded and non-grounded
conductors will be at different voltages, and will give rise to
different shades of grey (voltage contrast) in the SEM image.

The test site
which utilizes this concept is sketched in the
figure. The lower comb structure
consists of lines spaced on
intervals of length L. The entire comb
is grounded to the substrate.
The upper structure is a series of bars, spaced on intervals of
length (L + a). These bars are not
grounded. The first bar is
offset from the first comb bar by a distance D.
The isolated bars
will first contact the comb bar at a position number n, which depends
on the width of the lines. Wide lines
will make contact near the
start of the com...