Publication

Application

Priority

DE 9802868 W 19980928

DE 19742634 A 19970926

Abstract (en)

[origin: WO9916843A1] The invention relates to a polishing agent which is comprised of a solution containing a chemically active constituent in addition to polishing grains suspended therein. The inventive polishing agent is characterised in that the pH value of the solution is at least 0.1 lower than the pKs value of the chemically active constituent. The invention also relates to a method for chemical and mechanical planishing, whereby a polishing agent comprised of a solution is introduced between a substrate to be planished and an abrasive disk moving in relation to the substrate, and said solution contains a chemically active component in addition to polishing grains suspended therein. The inventive method is characterised in that the pH value of the solution is reduced by at least 0.1 in comparison with the pKs value of the chemically active component. The invention also relates to the use of a polishing agent to planish a semiconductor substrate. The polishing agent is comprised of a solution containing a chemically active constituent in addition to polishing grains suspended therein. The polishing agent is characterised in that the pH value of the solution is at least 0.1 lower than the pKs value of the chemically active component.