Hybrid spintronic devices require high Curie temperature
ferromagnets with a
large transport spin polarization. It has been predicted that
efficient spin
injection is facilitated by matching the conductance of the
ferromagnet to
that of the semiconductor and in this respect dilute magnetic
semiconductors
look to be more attractive for application. Oxide dilute magnetic
semiconductors are the only class to date that may offer Curie
Temperatures
above 300K. Here we review the effect of chemical substitution
and/or growth
parameters on the magnetic, magnetotransport and spin
polarisation of charge
carriers of a range of functional ferromagnetic oxides, such as
Fe$_{3}$O$_{4}$, Nd$_{2}$Mo$_{2}$O$_{7}$,
Co$_{x}$Ti$_{1-x}$O$_{2}$ and
Co$_{x}$Zn$_{1-x}$O.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2005.MAR.R1.214