In contrast to the commonly employed high temperature chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the bulk, we demonstrate that below 600 C graphene can be grown in a self-limiting monolayer growth process. Optimum growth is achieved at {approx}550 C. Above this temperature, carbon diffusion into the bulk is limiting the surface growth rate, while at temperatures below {approx}500 C a competing surface carbide phase impedes graphene formation.

Chemical vapor deposition (CVD) and electrochemical vapor deposition (EVD) have been applied to deposit yttria-stabilized-zirconia (YSZ) on porous ceramic media. The experimental results indicate that the location of YSZ deposition can be varied from the surface of the substrates to the inside of the substrates by changing the CVD/EVD experimental conditions, i.e., the concentration ratio of the reactant vapors. The deposition width is strongly dependent on the deposition temperature used. The deposition of YSZ inside the pores resulted in pore narrowing and eventually pore closure, which was measured by using permporometry. However, deposition of YSZ on top of porous ceramicmore » substrates (outside the pores) did not result in a reduction of the average pore size. Ultrathin, dense YSZ layers on porous ceramic substrates can be obtained by suppressing the EVD layer growth process after pore closure.« less

This work presents low temperature (200 and 300 deg. C) thin film deposition of tin oxide (SnO{sub 2}) using modified plasma enhanced chemical vapor deposition as a function of radio frequency power (100 - 500 W). Stannic chloride (SnCl{sub 4}) was used as precursor and oxygen (O{sub 2}, 300 SCCM) as reactant gas. Fine granular morphology was observed with tetragonal rutile structure grown along the [110] direction, at all the deposition conditions. Higher plasma power resulted in smoother morphology, improved crystallinity, and enhanced conductivity. Electrical resistivity value of as low as {approx}0.01 {omega} cm was obtained at the deposition temperaturemore » of 300 deg. C and 250 W of plasma power.« less