Date of this Version

2-26-2010

Citation

DOI: 10.1016/j.tsf.2009.10.114

This document has been peer-reviewed.

Abstract

Modern MOSFET devices with undoped channel have a non-trivial current distribution, which is gate voltage dependent In our work we have studied the sub-threshold behavior of undoped triple gate MOSFETs (FinFETs) using a thermionic transport model We have analyzed the conductance data of such devices. and from this, we have been able to determine the evolution of both the active cross-section area of the channel and the barrier height as a function of the gate voltage The result of our experiments shows good agreement with tight binding simulations and with analytical results. This confirms the validity of the use of our thermonic approach to Study transport in sub-micrometer size FinFET devices and not only in micrometer size samples specially made for characterizations.