Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayer
were investigated by micro-raman scattering measurement. These defects all originate from a certain
core and are composed of (I) a wavy tail region, (II) two long tails, the so called comet and (III) three
plaits. It was found that there are 3C-SiC inclusions in the cores of defect II and defect III and the
shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped
inclusion, the defect III would be formed; otherwise, the defect II was formed. No inclusion was
observed in the core of the defect I. The mechanisms of these defects are discussed.