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Resistive switching behaviors in Aloe vera films are being explored for nonvolatile memory applications. A simple structure in which the Aloe vera films sandwiched in between a top and bottom electrode are used. The switching behaviors of the devices in which the Aloe vera film is dried at different temperatures and the roles of top electrode materials (Al and Ag) are investigated. Current density–voltage measurements reveal that filamentary conduction is the dominant conduction process inducing resistive switching characteristics in Aloe vera films. Device with Al-top electrode requires a forming voltage higher than devices with Ag-top electrode, due to the tendency of oxide formation of these materials. The resistive switching behaviors are highly reproducible, as demonstrated by the data retention performance over an interval of 104 s and endurance capability of over 100 cycles.

Electrical properties of ZrO2 formed by simultaneous oxidation and nitridation of sputtered Zr thin films on Si have been systematically investigated. Various oxidation/nitridation temperatures (500, 700, 900, and 1100 °C) have been carried out in N2O ambient for an extended time of 20 min. Results indicated that the sample oxidized and nitrided at 700 °C possessed the highest effective dielectric constant of 18.22 and electrical breakdown field of 10.7 MV/cm at a current density of 10−6 A/cm2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density. The Fowler–Nordheim tunneling mechanism has been investigated for all samples and the highest value of barrier height extracted between the conduction band edges of oxide and semiconductor was 1.22 eV.

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