BPN567: Compound Semiconductor on Insulator (XOI) FETs

Project ID

BPN567

Website

Start Date

Mon 2010-Aug-09 13:01:59

Last Updated

Wed 2012-Feb-01 18:50:36

Abstract

Due to their high mobility, the integration of compound semiconductors on Si has been
actively studied over the past several years. This integration,
however, presents significant challenges. The conventional method of addressing this problem
consists of growth of multiple epilayers of materials to address the
lattice mismatch between Si and the desired semiconductor, leading to highly complex fabrication
techniques. Here we demonstrate high performance compound
semiconductor on insulator (XOI) field effect transistors (FET) consisting of ultra-thin InAs
nanoribbons (NR) on insulator that exhibit performance on par with the
state of the art quantum well FETs. We have performed a detailed study on the transport properties
of these InAs ribbons,
showing that quantum confinement plays a significant role in the electron transport properties. In
detail, the contact
resistance and mobility are heavily affected by the number of sub-bands populated.