Microsemi Delivers S-Band RF Power Transistor for Air Traffic Control Radar Aviation Applications

ALISO VIEJO, Calif., Nov. 13, 2012 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, has expanded its family of radio frequency (RF) transistors based on gallium nitride (GaN) on silicon carbide (SiC) technologies with a new S-band 500 watt (W) RF device. The 2729GN-500 is targeted at high-power air traffic control airport surveillance radar (ASR) applications. ASR is used to monitor and control aircrafts in the terminal within approximately 100 miles of an airport.

The 2729GN-500 transistor delivers unparalleled performance of 500W of peak power with 12 decibel (dB) of power gain and 53 percent drain efficiency over the band 2.7 to 2.9 gigahertz (GHz) to provide the maximum power in a single device covering this band. Key product features include:

•

Standard pulse burst format:

100µs, 10 percent DF (microseconds)

•

Excellent output power:

500W

•

High power gain:

>11.5 dB min

•

Drain bias−Vdd:

+65V

•

Low thermal resistance:

0.2 degrees C/W

Systems benefits that are achieved with GaN on SiC high electron mobility transistor (HEMT) include:

Packaging and Availability:
The 2729GN-500 is offered in a single-ended package and is built with 100 percent high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term military reliability. Loaner demonstration units are available to qualified customers and technical datasheets are available on the Microsemi website at www.microsemi.com. For more information please email sales.support@microsemi.com.

Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its 2729GN-500RF transistor and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.