Colossal magnetoresistance is a property with practical applications in a wide array of electronic tools including magnetic sensors and magnetic RAM. New research from a team including Carnegie’s Maria Baldini, Ho-Kwang “Dave” Mao, Takaki Muramatsu, and Viktor Struzhkin successfully used high-pressure conditions to induce colossal magnetoresistance for the first time in a pure sample of a compound called lanthanum manganite, LaMnO3.