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Abstract:

The invention relates to an organic electronic or optoelectronic
component, comprising an electrode and a counter-electrode and a layer
system between the electrode and the counter-electrode, wherein the layer
system contains at least one organic layer and at least one doped layer,
wherein the dopant in the doped layer represents a stronger Lewis acid
than antimony pentafluoride (SbF5) or a stronger Lewis base than
1,8-bis(dimethylamino)napthalene based on the calculation of fluoride ion
affinity.

Claims:

1. An organic electronic or optoelectronic component comprising: an
electrode; a counterelectrode; and a layer system between the electrode
and the counterelectrode, the layer system comprising at least one
organic layer and at least one doped layer, wherein the dopant in the
doped layer by the measure of fluoride ion affinity is a stronger Lewis
acid than antimony pentafluoride (SbF5) or is a stronger Lewis base
than 1,8-bis(dimethylamino)naphthalene.

2. The component according to claim 1, wherein the dopant is an organic,
organometallic or inorganic compound.

3. The component according to claim 1 or 2, wherein the dopant has at
least 10, preferably 20, more preferably more than 30 and at most 100
atoms.

4. The component according to claim 3, wherein the dopant is
tris(perfluoro-tert-butoxy)aluminum(III).

5. The component according to claim 3, wherein the dopant is a carborane
acid of the general formula H(CB11H12-nXn), especially
H(CB11H6X6) or H(CHB11X11), and wherein X is
selected from the group consisting of Cl, Br, I, F, CF3 and
combinations thereof, and n is an integer from 0 to 12.

6. The component according to claim 3, wherein the dopant is a
[R][carborane] or [R3-aHaSi][carborane] compound, especially
[R3C][carborane] or [R3Si][carborane] compound, and wherein a
is an integer from 0 to 2 and R is an alkyl, aryl or heteroaryl group,
[carborane] is [CB11R'12-nXn]-, especially
[CHB11R'5X6]-, R' is H, CH3, and X is halogen,
and n is an integer from 0 to 12.

7. The component according to claim 3, wherein the dopant is a metal
compound from the class of the pentafluorophenylamides having the formula
##STR00003## wherein M is a metal, preferably selected from a group
consisting of Co, Ni, Pd and Cu.

8. The component according to claim 3, wherein the dopant is a compound
of the formula [R3Si--X--SiR3].sup.+[BAr4]-, and
wherein R is independently selected from C1-C10-alkyl,
C3-C10-aryl or heteroaryl or two adjacent R radicals together
form a saturated or unsaturated ring, X is a halogen and Ar is a
halogenated, preferably fluorinated, aryl or heteroaryl.

9. The component according to claim 3, wherein the dopant is a compound
of the formula ((R2N)2--C═N)n--Ar, wherein R is
independently C1-C5-alkyl, in each case substituted or
unsubstituted, and wherein two adjacent R may be joined to one another,
and Ar is an aryl or heteroaryl, but preferably phenyl, naphthyl or
anthryl, and n is an integer, preferably 2, 3 or 4.

10. The component according to claim 3, wherein the dopant is a compound
of the formula ((RmX)--NC)nY or ((RmX)--NC)nY-M+, and wherein R is
in each case substituted or unsubstituted C1 to C10-alkyl, halogenated C1
to C10-alkyl, halogenyl, C3 to C14-aryl or heteroaryl having 3 to 14
aromatic atoms, X is selected from C, B, Si; Y is selected from C, B, Al;
M is any cation, and n and m are each an integer, such that the molecule
is outwardly uncharged.

11. The component according to claim 1, wherein the dopant occurs in the
layer with a proportion by mass of at most 35%, but preferably at most
30%.

12. The component according to claim 1, wherein the component is an OLED,
an organic solar cell, a field transistor (OFET) or a photodetector.

13. A method comprising: using compounds which by the measure of fluoride
ion affinity (FIA) are a stronger Lewis acid than antimony pentafluoride
(SbF5) or are a stronger Lewis base than
1,8-bis(dimethylamino)naphthalene for doping of charge carrier transport
layers or active layers, and as individual layers in organic electronic
or optoelectronic components.

Description:

[0001] The invention relates to novel dopants for organic systems and
layer systems, to the use thereof for doping an organic semiconductive
matrix material, as a charge injection layer, as a hole blocker layer, as
an electrode material, as the transport material itself, as a storage
material in electronic or optoelectronic components, and to the use of
matrix materials doped therewith in organic electronic or optoelectronic
components, and also to organic optoelectronic components comprising
these dopants.

[0002] It is known that the electrical properties of organic
semiconductors, especially the electrical conductivity thereof, can be
altered by doping, as is also the case for inorganic semiconductors such
as silicon semiconductors. In this context, by generation of charge
carriers in the matrix material, an increase in the conductivity, which
is quite low at first, and, depending on the type of dopant used, a
change in the Fermi level of the semiconductor is achieved. Doping here
leads to an increase in the conductivity of charge carrier transport
layers, which reduces ohmic losses, and to an improved transition of the
charge carriers between contacts and organic layer. Inorganic dopants
such as alkali metals (e.g. cesium) or Lewis acids (e.g. FeCl3;
SbCl5) are usually disadvantageous in the case of organic matrix
materials due to the high diffusion coefficients thereof, since the
function and stability of the electronic components is impaired (see D.
Oeter, Ch. Ziegler, W. Gopel Synthetic Metals (1993) 61 147; Y. Yamamoto
et al. (1965) 2015, J. Kido et al. Jpn J. Appl. Phys. 41 (2002) L358).
Moreover, the latter dopants have such a high vapor pressure that
industrial use is very questionable. Moreover, the reduction potentials
of these compounds are often too low to dope hole conductor materials of
real industrial interest. In addition, the extremely aggressive reaction
characteristics of these dopants complicate industrial use.

[0003] The use of doped organic layers or layer systems in organic
components, specifically organic solar cells and organic light-emitting
diodes, is known (e.g. WO2004083958). Various materials or material
classes have been proposed as dopants, as described in DE102007018456,
WO2005086251, WO2006081780, WO2007115540, WOP2008058525, WO2009000237 and
DE102008051737.

[0004] It is also known that dopants can be released via chemical
reactions in the semiconductive matrix material, in order to provide
dopants. The reduction potential of the dopants released in this way,
however, is often insufficient for various applications, for instance for
organic light-emitting diodes (OLEDs). Moreover, in the case of release
of the dopants, further compounds and/or atoms, for example atomic
hydrogen, are produced, which impairs the properties of the doped layer
or of the corresponding electronic components.

[0005] The problem addressed by the present invention is that of providing
novel dopants for use in electronic and optoelectronic components, which
overcome the disadvantages from the prior art.

[0006] More particularly, the novel dopants are to have sufficiently high
redox potentials without being disruptive influences on the matrix
material and are to provide an effective increase in the number of charge
carriers in the matrix material and be comparatively easy to handle.

[0007] According to the invention, the problem is solved by compounds
which by the measure of fluoride ion affinity (FIA) are a stronger Lewis
acid than antimony pentafluoride (SbF5) or a stronger Lewis base
than 1,8-bis(dimethylamino)naphthalene, and can be used as dopants in
organic electronic and optoelectronic components.

[0008] The measure of fluoride ion affinity (FIA) is based on the scale of
fluoride ion affinity in the gas phase (FIA). The strength of the binding
of a fluoride ion does not depend on further factors, for example on
hydrogen bonds in the case of the traditional acid-base protagonists,
water or hydroxide.

[0009] The fluoride ion affinity FIA links the strength of a Lewis acid to
the energy which is released in the binding of a fluoride ion F-.

[0010] By definition, the FIA corresponds to the value of the bonding
enthalpy ΔH with the reverse sign. The strength of a Lewis acid can
thus be read off directly from its entry on the FIA scale.

[0011] To determine reliable FIA values, it is possible to use
quantum-chemical calculations on isodesmic reactions, in which the type
and number of bonds is maintained.

[0012] Dopants mean compounds which occur with a proportion by mass of at
most 35%, but preferably at most 30%, in a layer, preferably a charge
carrier transport layer, of the layer system of an organic electronic or
optoelectronic component. The inventive compounds can also be used in the
form of usually thin individual layers, but preference is given to the
use thereof as dopants in a matrix material.

[0013] The inventive compounds may be organic, organometallic or inorganic
compounds, but preference is given to organic or organometallic
compounds.

[0014] The inventive Lewis acids are strongly electrophilic and are
therefore used as p-dopants in electronic or optoelectronic components.

[0015] The inventive Lewis acids are strongly nucleophilic and are
therefore used as n-dopants in electronic or optoelectronic components.

[0016] The inventive strong Lewis acids are also known as superacids in
the specialist field. These are capable, among other things, of
protonating the exceptionally unreactive noble gases. Use as dopants has
long been ruled out owing to the high reactivity thereof, since it is
crucial for industrial usability that they do not react with the matrix
material but p- or n-dope it.

[0017] It has been found that, surprisingly, use of inventive compounds as
dopants in organic electronic and optoelectronic components is possible
in spite of the high reactivity. Preferably, both the inventive Lewis
acids and the inventive Lewis bases have branched side chains or other
bulky groups which sterically shield the reactive site.

[0018] In an inventive component, both the charge transport layers and the
active layers can be doped, but it is usual to dope the charge carrier
transport layers. In addition, various individual or mixed layers may be
present. For reasons of long-term stability, it may be advantageous to
form the transport system from a layer system having doped and undoped
layers. In addition, thin layers are known as exciton blocker layers, for
which the use of the inventive compounds as an undoped individual layer
could be conceivable.

[0019] Organic electronic and optoelectronic components are understood to
mean components having at least one organic layer in the layer system. An
organic electronic and optoelectronic component may, inter alia, be an
OLED, an organic solar cell, a field transistor (OFET) or a
photodetector, particular preference being given to use in organic solar
cells.

[0020] In one embodiment, the inventive compounds contain at least 10,
preferably 20, but more preferably more than 30 and not more than 100
atoms. As a result, the inventive compounds are large and heavy enough to
have only a low diffusion coefficient in the matrix, which is important
for good function and high stability and lifetime of the electronic
components, and small enough to be usable industrially via vaporization.

[0021] An illustrative but nonlimiting example of a superacid here is the
compound tris(perfluoro-tert-butoxy)aluminum(III)
(Al(OC(CF3)3)3) (compound 1).

##STR00001##

[0022] As in the case of (Al(OC(CF3)3)3), the inventive
Lewis acids and Lewis bases preferably have branched side chains or other
bulky groups which sterically screen the central site (here, metal atom).
Any possible reaction of the dopant with the matrix is made much more
difficult thereby. Compound 1 consists of 43 atoms. Thus, it is large and
heavy enough to have only a low diffusion coefficient in the matrix,
which is important for good function and high stability and lifetime of
the electronic components. Moreover, industrial use is possible, since
the synthesis of tris(perfluoro-tert-butoxy)aluminum(III)
(Al(OC(CF3)3)3) is also known on the multigram scale.

[0023] Further examples of superacids as dopants are carborane acids
H(CB11H12-nXn), especially H(CB11H6X6) and
H(CHB11X11), where n is an integer from 0 to 12 and X is
selected from the group consisting of Cl, Br, I, F, CF3 and
combinations thereof. Carborane acids are known from the literature and
can be prepared, for example, from the corresponding silyl compound
[R3Si (carborane)] and HCl (Reed et al., Chem. Commun., 2005,
1669-1677). In one embodiment of the invention, the dopants used are
H(CHB11Cl11) and H(CB11H6X6), which can be
successfully sublimed under vacuum and protonate fullerenes (e.g.
C60) and stabilize fullerene cations (HC60.sup.+ and
Co60..sup.+) due to the robust and chemically quite inert carborane
skeleton (Reed et al. Science, 2000, 289, 101-103). In a further
embodiment, the corresponding [R][carborane] and
[R3-aHaSi][carborane] compounds where a is an integer from 0 to
2, especially [R3C][carborane] and [R3Si][carborane] compounds,
where [carborane] is [CB11R12-nXn]-, n is an integer
from 0 to 12, R is an alkyl, aryl and heteroaryl group, especially
[CHB11R'5X6]-, where R' is selected from H or
CH3 and X is a halogen, are also used as dopants. Synthesis and
properties of [R3C][carborane] compounds (Reed et al. Angew. Chem.
Int. Ed., 2004, 43, 2908-2911) and [R3Si][carborane] compounds (Reed
et al. Science, 2002, 297, 825-827) are documented in detail in the
literature. The carborane acids differ from conventional superacids in
that they slightly protonate weakly basic solvents and weakly basic
molecules and thus generate superacidity without addition of a strong
Lewis acid (e.g. SbF5) (Reed et al. Angew. Chem. Int. Ed., 2004, 43,
5352-5355). They surpass the acid strength of trifluoromethanesulfonic
acid, and exhibit even lower anion nucleophilicity and better
crystallization characteristics of the salts thereof. Icosahedral
carborane anions of the CHB11R5X6- type (R=H,
CH3, Cl, X=Cl, Br, I) are some of the most weakly nucleophilic, most
redox-inactive and most inert anions in modern chemistry. Thus, they
cannot initiate any decomposition reactions of the compounds protonated
by the carborane acid thereof. FIG. 3 shows examples of anions
(conjugated bases) of the claimed carborane acids (reproduced from Chem.
Commun. 2005, 1669-1677).

[0024] The bulky, sterically demanding anions achieve a low diffusion
coefficient in the matrix, and this, in conjunction with the low
nucleophilicity and the very weak redox behavior, is of crucial
importance for good function and high stability and lifetime of the
electronic components. Using carborane acids as p-dopants, very stable
protonated compounds are thus obtained, and these are barely decomposed,
or are decomposed to a very small degree, by the carborane anion in a
further reaction. The low vapor pressure of the carborane acids allows
optimal doping. The positive charge carriers produced thereby have high
electrophilicity and pull an electron away from the adjacent hole
conductor molecules.

[0025] In one embodiment of the invention, metal compounds from the class
of the pentafluorophenylamides of the general formula I

##STR00002##

are used, where M is a metal. M is preferably selected from the group
consisting of Co, Ni, Pd and Cu.

[0026] Compounds of the formula (I) have bulky groups which sterically
shield the central site. Moreover, the compound of the formula (I),
because of its size and mass, is suitable for use as a dopant in organic
layer systems.

[0027] In a further embodiment, compounds of the general formula II

[R3Si--X--SiR3].sup.+[BAr4]- (II)

are used, where R is independently selected from C1-C10-alkyl,
C3-C10-aryl or heteroaryl and/or two adjacent R radicals
together form a saturated or unsaturated ring, X is a halogen and Ar is a
halogenated, preferably fluorinated, aryl or heteroaryl.

[0028] In a further embodiment, compounds of the general formula III

((R2N)2C═N)nAr (III)

are used, where R is independently C1-C5-alkyl, in each case
substituted or unsubstituted, where two adjacent R may be joined to one
another, and Ar is an aryl or heteroaryl, but preferably phenyl, naphthyl
or anthryl, and n is an integer, preferably 2, 3 or 4.

[0029] In a further embodiment of the invention, compounds of the general
formula IV or V

((RmX)--NC)nY (IV)

((RmX)--NC)nY-M.sup.+ (V)

are used, where R is in each case substituted or unsubstituted C1 to
C10-alkyl, halogenated C1 to C10-alkyl, halogenyl, C3
to C14-aryl or heteroaryl having 3 to 14 aromatic atoms, X is
selected from C, B, Si; Y is selected from C, B, Al; M is any cation, and
n and m are each an integer, such that the molecule is outwardly
uncharged.

[0030] In an advantageous embodiment of the invention, the photoactive
layers of the component absorb a maximum amount of light. For this
purpose, the spectral range within which the component absorbs light is
as broad as possible.

[0031] In an advantageous configuration of the above embodiment of the
invention, the i layer system of the photoactive component consists of a
double layer or mixed layers of 2 materials or of a double mixed layer or
a mixed layer with an adjacent individual layer composed of at least 3
materials.

[0032] In a further embodiment of the invention, to improve the charge
carrier transport properties of the double mixed layer, the mixing ratios
in the different mixed layers may the same or else different, the
composition being the same or different.

[0033] In a further embodiment of the invention, a gradient of the mixing
ratio may be present in the individual mixed layers, the gradient being
formed in the direction of the cathode or anode.

[0034] In one configuration of the invention, the organic electronic or
optoelectronic component takes the form of a tandem cell or multiple
cell, for instance that of a tandem solar cell or tandem multiple cell.

[0035] In a further embodiment of the invention, the organic electronic or
optoelectronic component, especially an organic solar cell, consists of
an electrode and a counterelectrode and, between the electrodes, at least
one photoactive layer and at least one doped layer between the
photoactive layer and an electrode, which preferably serves as a charge
carrier transport layer.

[0036] In a further embodiment of the invention, one or more of the
further organic layers are doped wide-gap layers, the maximum absorption
being <450 nm.

[0037] In a further embodiment of the invention, the HOMO and LUMO levels
of the main materials are matched such that the system enables a maximum
open-circuit voltage, a maximum short-circuit current and a maximum fill
factor.

[0038] In a further embodiment of the invention, the organic materials
used for photoactive layers are small molecules.

[0039] In a further embodiment of the invention, the organic materials
used for the photoactive layers are at least partly polymers.

[0040] In a further embodiment of the invention, the photoactive layer
comprises, as an acceptor, a material from the group of the fullerenes or
fullerene derivatives (C60, C70, etc.).

[0041] In a further embodiment of the invention, at least one of the
photoactive mixed layers comprises, as a donor, a material from the class
of the phthalocyanines, perylene derivatives, TPD derivatives,
oligothiophenes, or a material as described in WO2006092134 or
DE102009021881.

[0042] The inventive components can be produced in various ways. The
layers in the layer system can be applied in liquid form as a solution or
dispersion by printing or coating, or can be applied by vapor deposition,
for example by means of CVD, PVD or OVPD.

[0043] The term "vaporization temperature" in the context of the invention
is understood to mean that temperature which is required to achieve a
vapor deposition rate of 0.1 nm/s at the position of the substrate for a
given vaporizer geometry (reference: source with a circular opening
(diameter 1 cm) at a distance of 30 cm from a substrate arranged
vertically above it) and a reduced pressure in the range of 10-4 to
10-10 mbar. It is unimportant here whether this is a vaporization in
the narrower sense (transition from the liquid phase to the gas phase) or
a sublimation.

[0044] The layer formation by vapor deposition therefore preferably gives
rise to those structures in which the intermolecular interactions within
the layer are maximized, such that the interfaces which can enter into
strong interactions are avoided at the layer surface.

[0045] There have been literature descriptions of organic solar cells
formed from vacuum deposition of nonpolymeric organic molecules, called
small molecules, and these, apart from a few exceptions (Drechsel, Org.
Electron., 5, 175 (2004); J. Drechsel, Synthet. Metal., 127, 201-205
(2002)), are formed in such a way that the so-called base contact on
which the organic layers are deposited forms the anode (if the structure
comprises an exclusively hole-conducting or p-doped layer, it adjoins the
base contact). The anode is generally a transparent conductive oxide
(often indium tin oxide, abbreviated to ITO; it may also be ZnO:Al), but
it may also be a metal layer or a layer of a conductive polymer. After
deposition of the organic layer system comprising the photoactive mixed
layer, a usually metallic cathode is deposited.

[0046] In a further embodiment of the invention, the component is formed
as a single cell with the nip, ni, ip, pnip, pni, pip, nipn, nin, ipn,
pnipn, pnin, pipn, nip, ipni, pnip, nipn or pnipn structure, where n is a
negatively doped layer, i is an intrinsic layer which is undoped or
slightly doped, and p is a positively doped layer.

[0047] In a further embodiment of the invention, the component is formed
as a tandem cell composed of a combination of nip, ni, ip, pnip, pni,
pip, nipn, nin, ipn, pnipn, pnin or pipn structures.

[0048] In a particularly preferred embodiment of the above-described
structures, this takes the form of a pnipnipn tandem cell.

[0049] In a further embodiment, the acceptor material in the mixed layer
is at least partly in crystalline form.

[0050] In a further embodiment, the donor material in the mixed layer is
at least partly in crystalline form.

[0051] In a further embodiment, both the acceptor material and the donor
material in the mixed layer are at least partly in crystalline form.

[0052] In a further embodiment, the acceptor material has an absorption
maximum in the wavelength range of >450 nm.

[0053] In a further embodiment, the donor material has an absorption
maximum in the wavelength range of >450 nm.

[0054] In a further embodiment, the n material system consists of one or
more layers.

[0055] In a further embodiment, the p material system consists of one or
more layers.

[0056] In a further embodiment, the n material system comprises one or
more doped wide-gap layers.

[0057] The term "wide-gap layers" defines layers having an absorption
maximum in the wavelength range of <450 nm.

[0058] In a further embodiment, the p material system comprises one or
more doped wide-gap layers.

[0059] In a further embodiment, the component comprises a p-doped layer
between the photoactive i layer and the electrode present on the
substrate, in which case the p-doped layer has a Fermi level which is at
most 0.4 eV, but preferably less than 0.3 eV, below the electron
transport level of the i layer.

[0060] In a further embodiment, the component comprises an n layer system
between the photoactive i layer and the counterelectrode, in which case
the additional n-doped layer has a Fermi level which is at most 0.4 eV,
but preferably less than 0.3 eV, above the hole transport level of the i
layer.

[0061] In a further embodiment, the acceptor material is a material from
the group of the fullerenes or fullerene derivatives (preferably C60
or C70) or a PTCDI derivative (perylene-3,4,9,10-bis(dicarboximide)
derivative).

[0062] In a further embodiment, the donor material is an oligomer,
especially an oligomer according to WO2006092134, a porphyrin derivative,
a pentacene derivative or a perylene derivative such as DIP
(diindenoperylene), DBP (dibenzoperylenes).

[0065] In a further embodiment, one electrode is transparent with a
transmission of >80% and the other electrode is reflective with a
reflection of >50%.

[0066] In a further embodiment, the component is semitransparent with a
transmission of 10-80%.

[0067] In a further embodiment, the electrodes consist of a metal (e.g.
Al, Ag, Au or a combination thereof), a conductive oxide, especially ITO,
ZnO:Al or another TCO (transparent conductive oxide), a conductive
polymer, especially PEDOT/PSS (poly(3,4-ethylenedioxythiophene)
poly(styrenesulfonate)) or PANI (polyaniline), or a combination of these
materials.

[0068] In a further embodiment of the invention, use of light traps
extends the optical pathway of the incident light in the active system.

[0069] In a further embodiment, the light trap is implemented by forming
the component on a periodically microstructured substrate and ensuring
the homogeneous function of the component, i.e. short circuit-free
contacting and homogeneous distribution of the electrical field over the
whole area, by the use of a doped wide-gap layer. Ultrathin components
have, on structured substrates, an increased risk of formation of local
short circuits, and so such an obvious inhomogeneity ultimately endangers
the functionality of the overall component. This short-circuit risk is
reduced by the use of the doped transport layers.

[0070] In a further embodiment of the invention, the light trap is
implemented by forming the component on a periodically microstructured
substrate and ensuring the homogeneous function of the component, the
short circuit-free contacting thereof and a homogeneous distribution of
the electrical field over the whole area by the use of a doped wide-gap
layer. It is particularly advantageous here that the light passes through
the absorber layer at least twice, which can lead to increased light
absorption and as a result to an improved efficiency of the solar cell.

[0071] In a further embodiment of the invention, the light trap is
implemented by virtue of a doped wide-gap layer having a smooth interface
to the i layer and a rough interface to the reflective contact. The rough
interface can be achieved, for example, by periodic microstructuring. The
rough interface is particularly advantageous when it reflects the light
in a diffuse manner, which leads to an extension of the light pathway
within the photoactive layer.

[0072] In a further embodiment, the light trap is implemented by forming
the component on a periodically microstructured substrate and by virtue
of a doped wide-gap layer having a smooth interface to the i layer and a
rough interface to the reflective contact.

[0073] In a further embodiment of the invention, the overall structure is
provided with a transparent base and top contact.

[0074] In a further embodiment of the invention, the inventive photoactive
components are used on curved surfaces, for example concrete, roof tiles,
clay, automotive glass, etc. It is advantageous here that the inventive
organic solar cells, with respect to conventional inorganic solar cells,
can be applied to flexible carriers such as films, textiles, etc.

[0075] In a further embodiment of the invention, the inventive photoactive
components are applied to a film or textile having an adhesive
composition, for example an adhesive. It is thus possible to produce a
solar adhesive film which can be arranged as required on any desired
surfaces. For instance, it is possible to produce a self-adhesive solar
cell.

[0076] In a further embodiment, the inventive photoactive components
include a different adhesive composition in the form of a hook-and-loop
connection.

[0077] In a further embodiment, the inventive photoactive components are
used in conjunction with energy buffers or energy storage media, for
example accumulators, capacitors etc., for connection to loads or
devices.

[0078] In a further embodiment, the inventive photoactive components are
used in combination with thin-film batteries.

[0079] The invention is subsequently to be illustrated in more detail with
reference to some working examples.

[0080] FIG. 1 shows an individual cell with an electrode 5 adjacent to a
substrate 6, a transport layer 4, a photoactive layer system 3, a
transport layer 2 and a counterelectrode 1.

[0081] FIG. 2 shows a tandem cell with an electrode 5 adjacent to a
substrate 6, two instances of a sequence of a transport layer 4 and 7, a
photoactive layer system 3 and 6, a transport layer 2 and 5, and a
counterelectrode 1.

[0082] FIG. 3 shows examples of anions of carborane acids claimed in
accordance with the invention.

[0083] The working examples adduced detail some inventive components by
way of example. The working examples are intended to describe the
invention without restricting it thereto.

[0084] In one use example, by way of example, some inventive components
are formed as a solar cell as follows: