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Abstract

Disclosed is a set of planarization processes for defining films less than 10 nm thick as active or passive devices sandwiched between two contacts.

Country

United States

Language

English (United States)

This text was extracted from an ASCII text file.

This is the abbreviated version, containing approximately
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Planar Processes for Nanostructure Fabrication

Disclosed is
a set of planarization processes for defining
films less than 10 nm thick as active or passive devices sandwiched
between two contacts.

Referring to
the figure, it is seen that all three approaches
involve definition of the bottom metal (M) contact using the
Damascene patterning process. The recess
depth of the bottom
electrode is equivalent to or greater than the final thin film
thickness depending on use of I. metal chem.
mech polish with or
without (II) stop layer trim. In
approach III, micromilling gives a
completely planar surface. The ultrathin
films are defined
postdeposition by chem. mech polishing
or micromilling in I, but
selective CVD in II and III. The top
contact metallurgy is
subsequently defined using a full or stud Damascene stud process.

Using
appropriate semiconductors in place of the metals, these
schemes would also be workable with chem.
mech polish processes
evolved from current deep and shallow trench isolation procedures.