Abstract

A new nanoscale SOI dual-mode modulator is investigated as a function of optical and thermal activation modes. In order to accurately characterize the device specifications towards its future integration in microelectronics circuitry, current time variations are studied and compared for “large signal” constant temperature changes, as well as for “small signal” fluctuating temperature sources. An equivalent circuit model is presented to define the parameters which are assessed by numerical simulation. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the next generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.