According to the Moore´s Law, the number of transistors on a chip will be dual every two-years . Increasing the number of transistors entails the problem of rising temperatures. One strategy to overcome this problem is the size shrinking of the transistors. But the size reduction leads to the less performance of the silicon and problems such as electrons tunneling . Graphene is a material that has all the potential necessary to be able to replace silicon in the semiconductor industry. The atomic structure of graphene improves electrical properties, optical, mechanical and heat. Studies show that using this material as the channel material in the field-effect transistors leads to performance improvement of the device. This paper examines the properties of grapheneand its application in the structure of field-effect transistors .