Micron announces 16nm flash memory technology

Micron Technology has announced that it is now sampling the next-generation 16nm process technology. The new 16nm technology enabled them to bring the industry's smallest 128Gb multi-level cell (MLC) NAND flash memory.

The new Micron 16nm 128Gb MLC NAND flash memory provides the greatest number of bits per square millimeter, lowest cost of any MLC device today and ability to create nearly 6TB of storage on a single wafer. According to Micron, the 16nm node is not only the leading flash process but also the most advanced processing node up to date. The new 128Gb MLC NAND flash memory targets consumer SSDs, removable storage such as USB drives and flash cards, data center cloud storage as well as tablets, ultrathin devices and mobile handsets.

Micron is currently sampling 16nm 128Gb MLC NAND to select partners and plans to achieve full production in Q4 2013. Micron also announced that a new line of SSDs based on 16nm 128Gb MLC chips is expected to ship in 2014.