Category

Published on

22 Feb 2005

Abstract

NanoMOS is a 2-D simulator for thin body (less than 5 nm),
fully depleted, double-gated n-MOSFETs. A choice of five transport
models is available (drift-diffusion, classical ballistic, energy
transport, quantum ballistic, and quantum diffusive). The transport
models treat quantum effects in the confinement direction exactly
and the names indicate the technique used to account for carrier
transport along the channel. Each of these transport models is solved
self-consistently with Poisson's equation. Several internal quantities
such as subband profiles, subband areal electron densities, potential
profiles and I-V information can be obtained from the source code.