Abstract

Ion beam induced deformation and compaction has been observed in InP, amorphized by MeV Se ion implantation. The initial density of amorphous InP is 0.55%±0.05% larger than that of crystalline InP. During a period of two months, most of the excess density is lost in a spontaneous, room‐temperature relaxation. This relaxation can be described by two time constants: τ1≊8±2 h and τ2≊14±1 days.