Abstract

A method to increase decisively the p-type doping level in ZnSe-based laser diodes is described. Upon indiffusion, the formation of a stable acceptor complex is observed. Free hole concentrations of are obtained. This value is at least one order of magnitude larger than typical p-type doping levels achieved by molecular-beam epitaxy of ZnSe. In addition, no compensation effects occur, as usually observed for p-type doping using either Li or N. ZnSe-based lasers processed by applying this post-growth p-doping enhancement technology show significantly improved properties.