AlGaN/GaN HFETs have been analyzed using pulsed I-V measurements and RF time-domain measurements in an attempt to analyze the phenomenon of DC-RF dispersion and achieve maximum RF performance. The… (More)

Although memory-less pre-distortion together with memory mitigation techniques are used extensively in countering the effects of PA non-linearity, the sources of non-quasi-static non-linear behaviour… (More)

GaN/AlGaN HEMTs can suffer from short channel effects as a result of insufficient buffer doping. The paper show that controlled iron doping of the GaN buffer during MOVPE growth can suppress all… (More)

Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate… (More)

The AlGaN/GaN HFET project at QinetiQ has the capability to grow high quality layers using MOVPE, fabricate HFETs with 0.8 and 0.25 /spl mu/m gate length and fabricate amplifiers. Here we present… (More)

AlGaN/GaN HFET’s have been analyzed under DC and RF Stimulus in an attempt to analyze the phenomenon of DC-RF dispersion. DC pulsed I-V measurements were performed where the pulse “off” state was set… (More)

This paper demonstrates the capabilities of a state of the art RF waveform measurement system to explore the RF performance of new compound semiconductor MOSFET devices. Pulsed IV and time domain… (More)