schliz writes: Researchers have made headway into developing spintronic RAM by successfully transferring spin information from an electron to a more robust atomic nucleus and accessing the information 2,000 times in 100 seconds before it decayed. The demonstration was conducted using phosphorus-doped sillicon in a highly magnetised, low-temperature environment (8.59 Tesla, -269.5 degrees Celsius). Other researchers have achieved spin lifetimes of 30 hours in a weaker magnetic field (0.3 Tesla).Link to Original Source