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Abstract:

The invention relates to a device (2) for generating an ion beam (4),
comprising a support (6), an ion source (18), this ion source having a
lower end (8) connected to the support (6) and an upper end (10) opposite
the lower end (8), and extraction means (12) for extracting the ions
emitted by the source, this extraction means (12) comprising a wall (14)
having an opening (16), the opening (16) being arranged close to the
upper end (10) of the ion source (18) so as to allow the extracted ions
to pass through this opening.
This device (2) further includes means (M1, M2) for the generation of a
magnetic field (B) capable of generating a magnetic field in the opening
(16) of the extraction means, the generated magnetic field (B) being
capable of deflecting charged particles (20) attracted by the ion source
so that these charged particles do not reach the ion source.

Claims:

1. Device for generating an ion beam, comprising: a support; an ion
source, this ion source comprising one lower end connected to the support
and an upper end opposite the lower end; means for extracting the ions
emitted by the source, this extraction means comprising a wall provided
with an opening, the opening being arranged in the vicinity of the upper
end of the ion source, to allow the extracted ions to pass through this
opening; and means for the generation of a magnetic field capable of
generating a magnetic field at the opening of the extraction means, the
generated magnetic field being capable of deflecting the charged
particles attracted by the ion source so that the charged particles do
not reach the ion source.

2. The device according to claim 1, wherein the generated magnetic field
is capable of deflecting the charged particles so that they meet the wall
of the extraction means instead of reaching the ion source by passing
through the opening of the extraction means.

3. The device according to claim 1, wherein the means for generating a
magnetic field is arranged at the opening of the extraction means.

4. The device according to claim 3, wherein the opening of the extraction
means is formed in a recess of the extraction means, the means for
generating a magnetic field being placed inside this recess, on the edge
of said opening.

5. The device according to claim 1, wherein the means for generating a
magnetic field comprises at least one permanent magnet.

6. The device according to claim 5, wherein the means for generating a
magnetic field is composed of two permanent magnets facing one another.

7. The device according to claim 6, wherein the two permanent magnets
together define an air gap that is preferably adjustable between about 2
to about 4 mm.

8. The device according to claim 7, wherein the magnetic field induced by
the two permanent magnets in the air gap is of the order of 0.1 to 1
Tesla.

9. The device according to claim 1, wherein the ion extraction means is
an extraction electrode surrounding the ion source.

10. The device according to claim 1, wherein the ion source is surrounded
by a cryogenic trap held at low temperature, this cryogenic trap being
capable of trapping volatile chemical species by condensation before they
are able to reach the ion source.

11. The device according to claim 10, wherein the cryogenic trap is held
at a low temperature by: circulation or accumulation of a cryogenic
fluid, the cryogenic fluid preferably being liquid nitrogen; or a
mechanical refrigerator generating a low emission of vibrations; or an
electric refrigerator.

12. The device according to claim 10, wherein the cryogenic trap is held
at a temperature below 100 K.

13. The device according to claim 10, wherein the cryogenic trap
comprises a sheath with two open ends surrounding the ion source.

14. The device according to claim 13, wherein the cryogenic trap
comprises a coiled tube with cryogenic fluid, wound around the sheath.

15. The device according to claim 13, wherein one of the open ends of the
sheath is used for passing of the ion beam produced by the ion source.

16. The device according to claim 13, wherein the sheath is formed by a
wall of revolution, this wall comprising a first section of cylindrical
shape and a second section of frusto-conical shape.

17. The device according to claim 10, wherein the cryogenic trap
surrounds both the ion source and the extraction means.

18. The device according to claim 1, wherein the ion source is a liquid
metal ion source.

19. The device according to claim 18, wherein the liquid metal ion source
comprises a conductive rod ending in a tip, a reservoir attached to the
rod and used to collect a source metal to be liquefied, and a conductive
filament comprising windings through which the tip of the rod passes.

20. Focused ion beam installation comprising: a work chamber containing a
sample holder and an inlet for reagent gases in the vicinity of the
sample holder; and a column with several levels, including a first level
for generating an ion beam and a second level for guiding and focusing
the ion beam, an installation in which the first level comprises a device
according to claim 1.

Description:

[0001] The present invention concerns a device for generating an ion beam,
comprising: a support; an ion source, this ion source having a lower end
connected to the support and an upper end, opposite the lower end; and
means for extracting the ions emitted by the source, this extraction
means comprising a wall provided with an opening, the opening being
arranged in the vicinity of the upper end of the ion source, to allow the
extracted ions to pass through this opening.

[0002] Such a device for generating an ion beam is known from document WO
02/078036 A2.

[0003] It has been ascertained that the spatial and temporal stability of
the ion beam emitted by a said device is limited. Contamination effects,
notably due to bombarding by secondary electrons such as described in the
article by P. Sudraud et al (1986), The effect of carbon bearing gases
and secondary electron bombardment on a liquid metal ion source, Journal
de Physique, C7, Tome 47, 381, are detrimental to the stability of the
ion source. These contamination effects considerably increase the noise
of the ion source and reduce the lifetime thereof.

[0004] It is therefore one objective of the invention to improve the
spatial and temporal stability of the ion beam emitted by a device such
as set forth above.

[0005] This objective is reached with a device for generating an ion beam
of the above-cited type, characterized in that the device further
comprises means for the generation of a magnetic field capable of
generating a magnetic field at the opening of the extraction means, the
generated magnetic field being capable of deflecting the charged
particles attracted by the ion source so that these charged particles do
not reach the ion source.

[0006] By generating a magnetic field at the opening of the extraction
means, it becomes possible to deflect the secondary electrons from their
pathway. The secondary electrons are no longer able to reach the ion
source, and therefore can no longer perturb the ion-emitting region of
this source. Therefore, the stability of the device for generating an ion
beam is markedly improved, making it possible to obtain linearity of its
IN characteristics that is noteworthy and of no comparison with an
equivalent device whose source is not protected by a magnetic field.

[0007] The protection of the ion source by a magnetic field also allows an
increase in the lifetime thereof.

[0008] Document U.S. Pat. No. 6,294,862 describes an ion source using
phosphine gas as <<fuel>>, i.e. as input species to be
ionized. Phosphine gas is added to a confinement chamber and is ionized
therein by electron bombardment. The resulting plasma is contained within
the chamber by means of magnets distributed over the walls thereof. The
phosphorous cations contained in the plasma exit the chamber in the form
of a beam through openings made in a plasma electrode arranged at one of
the walls of the confinement chamber. Yet, it occurs that among the
electrons present in the plasma and used to ionize the phosphine gas,
those that are of high energy manage to exit the confinement chamber
together with the phosphorous cations, via said openings and
<<pollute>> the ion beam. To reduce the quantity of
undesirable high energy electrons present in the ion beam, document U.S.
Pat. No. 6,294,862, proposes arranging magnets around openings in the
plasma electrode. The magnetic field set up at the openings of the plasma
electrode turn the high energy electrons away from said openings.
Therefore, the high energy electrons are kept inside the confinement
chamber. In addition, the plasma electrode is held at a slightly negative
potential compared with the remainder of the confinement chamber so as to
repel plasma anions back into the confinement space. The plasma
electrode, including its magnets, is therefore used solely for
confinement of the plasma. The extracting of phosphorous cations through
the openings of the plasma electrode is ensured by a component separate
from the plasma electrode, namely an ordinary extraction electrode
located downstream of the ion source.

[0009] Depending on particular embodiments, the device for generating an
ion beam according to the invention comprises one or more of the
following characteristics, taken alone or in any technically possible
combination:

[0010] The generated magnetic field is capable of deflecting the charged
particles so that they meet the wall of the extraction means instead of
reaching the ion source by passing through the opening of the extraction
means;

[0011] The means for generating a magnetic field is arranged at the
opening of the extraction means;

[0012] The opening of the extraction means is formed in a recess of the
extraction means, the means for generating a magnetic field being
positioned inside this recess, on the edge of said opening;

[0013] The means for generating a magnetic field comprise at least one
permanent magnet;

[0014] The means for generating a magnetic field comprise two permanent
magnets placed facing one another;

[0015] The two permanent magnets together define an air gap that is
preferably adjustable by about 2 to about 4 mm;

[0016] The magnetic field induced by the two permanent magnets in the air
gap is of the order of 0.1 to 1 Tesla;

[0017] The ion extracting means is an extraction electrode surrounding the
ion source;

[0018] The ion source is surrounded by a cryogenic trap held at low
temperature, this cryogenic trap being capable of trapping volatile
chemical species by condensation before they are able to reach the ion
source;

[0019] The cryogenic trap is held at low temperature by: [0020]
circulation or accumulation of a cryogenic fluid, the cryogenic fluid
preferably being liquid nitrogen; or [0021] a mechanical refrigerator
generating low vibration emission; or [0022] an electric refrigerator;

[0023] The cryogenic trap is held at a temperature of less than 100 K;

[0024] The cryogenic trap comprises a sheath with two open ends
surrounding the ion source;

[0025] The cryogenic trap comprises a coiled tube of cryogenic fluid wound
around the sheath;

[0026] One of the open ends of the sheath is used for passing of the ion
beam produced by the ion source;

[0027] The sheath is formed of a wall of revolution, this wall comprising
a first section of cylindrical shape and a second of frusto-conical
shape;

[0028] The cryogenic trap surrounds both the ion source and the extraction
means;

[0029] The ion source is a liquid metal ion source;

[0030] The liquid metal ion source comprises a conductive rod ending in a
tip, a reservoir attached to the rod and used to collect a source metal
to be liquefied, and a conductive filament comprising windings through
which the tip of the rod passes.

[0031] The invention additionally comprises a focused ion beam
installation comprising: [0032] a work chamber containing a sample
holder and an inlet for reagent gases in the vicinity of the sample
holder; and [0033] a column with several levels, of which a first level
for generating the ion beam and a second level for guiding and focusing
the ion beam,

[0034] an installation in which the first level comprises a device for
generating an ion beam such as set forth above.

[0035] The invention will be better understood on reading the following
description, given solely as an example and with reference to the
appended drawings.

[0036] FIG. 1 is a perspective cutaway view of a focused ion beam
installation according to one embodiment of the invention;

[0037]FIG. 2 is a longitudinal, sectional view of the column of the
installation in FIG. 1, along arrows I-I;

[0038] FIG. 3 is partial, cross-sectional side view of the device for
generating an ion beam integrated in the installation shown FIG. 1;

[0039] FIG. 4 is a cross-sectional view of a detail in FIG. 3, along
arrows II-II; and

[0040] FIG. 5 is a front view of the emission opening of the device in
FIG. 3, along arrow III.

[0041] FIG. 1 illustrates a focused ion beam installation according to the
invention. This installation 1 comprises a work chamber 50 of
parallelepiped shape held under a vacuum, and a column 42 of general
cylindrical shape. The column 42 passes through one of the walls of the
work chamber 50 and one end thereof extends into the chamber.

[0042] The column 42 has several levels and notably a first level 44
containing a device 2 for generating an ion beam (cf. FIG. 3), and a
second level 46 containing means for guiding and focusing the ion beam
generated inside the first level.

[0043] The work chamber 50 contains a holder 54 which is used to hold and
position a sample 52 with three-dimensional nanometric precision. For
this purpose, the holder 54 preferably comprises a laser interferometer.

[0044] In addition, the work chamber 50 contains a gas inlet 48, whose
orifice 56 lies in the vicinity of the work region 58 of the holder 54
able to receive a sample 52.

[0045]FIG. 2 gives a schematic overview of the main elements present
inside the column 42. From top to bottom, these are the ion source 18,
the extraction electrode 12, the accelerator 60, a first lens 62, a
diaphragm 64 and a second lens 66.

[0046] FIG. 3 illustrates a device for generating an ion beam, this device
being designated under reference number 2. This device 2 is positioned
inside a space 9 of the first level 44, the space being held under a
vacuum. The device 2 comprises an ion source 18 which is surrounded by an
extraction electrode 12. The ion source 18 and the extraction electrode
12 are attached to a support 6. A base 3 can also be seen on which the
support 6 is mounted.

[0047] The source 18 comprises a conductive rod 24 ending in a tip 11, a
reservoir R (cf. FIG. 4) secured to the rod 24 and used to collect a
source metal to be liquefied, and a conductive filament 5 comprising
windings. The tip 11 of the rod 24 passes through these windings. The rod
24 and the reservoir R are formed of a conductive, refractory material
such as graphite or tungsten. The source metal is a material of high
purity and is incorporated in the ion source 18 before use thereof.

[0048] The expression <<lower end>> will be used to designate
the end 8 of the ion source 18 located in the vicinity of the support 6.
The end 10 of the ion source 18 opposite the lower end 8 shall be
designated the <<upper end>>. This upper end 10 comprises the
tip 11 of the rod 24.

[0049] The extraction electrode 12 is provided with an opening 16, called
the <<extraction diaphragm>>, and with orifices such as
orifice 7 through which residual gases can be pumped. The opening 16 and
said orifices are made in a wall 14 of the extraction electrode 12. The
opening 16 is located in the middle of a cylindrical recess 26 of the
extraction electrode 12.

[0050] The characteristics of the device 2 just described are known, and
for further details reference can be made to documents WO 02/078036 A2
and WO 96/02065. In the remainder hereof we shall focus on new elements
that are subject of the present invention.

[0051] The device 2 has the particularity of comprising a cryogenic trap
28. The trap 28 must lie at a sufficient distance from the ion source 18
to avoid cooling of the source metal. This trap 28 comprises a sheath 32
surrounding the ion source 18, and an extraction electrode 12. The sheath
32 has a section S1 of cylindrical shape and a section S2 of
frusto-conical shape. The wall of revolution 40 of the sheath 32 forms a
shield around the ion source 18. The inner surface 21 of the wall 40 can
be distinguished, this surface facing the ion source 18, and the outer
surface 23 of the wall 40 which faces the space 9. In other words, the
outer surface 23 is located on one side of the wall 40, whilst the ion
source 18 is located on the other side of the wall 40.

[0052] The sheath 32 has two open ends 34 and 36. The open end 34 allows
inserting of the ion source 18 and of the extraction electrode 12 inside
the sheath 32. The open end 36 allows the passing of the ion beam 4
generated by the ion source 18.

[0053] The cryogenic trap 28 further comprises a coiled tube 38 wound
around the sheath 32. This tube 38 allows the circulation or accumulation
of a cryogenic fluid 30, preferably liquid nitrogen.

[0054] A second novelty of the device 2 is the addition of a magnetic
filter M1, M2. This magnetic filter comprises two permanent magnets M1
and M2 which are arranged facing one another inside the recess 26 of the
extraction electrode 12.

[0055] With reference to FIG. 5, these two magnets together define an air
gap D. This air gap D is preferably adjustable between about 2 and 4 mm.
The two magnets M1 and M2 induce a magnetic field B in the air gap D, the
value of this field preferably being of the order of 0.1 to 1 Tesla. The
magnetic field B is represented FIGS. 3 to 5 by arrowed field lines.

[0056] FIG. 4 is a cross-sectional view of the tip of the extraction
electrode 12, along line II-II in FIG. 3. FIG. 4 therefore illustrates a
view perpendicular to the view shown FIG. 3. In FIG. 4, the magnetic
field B can be seen whose field lines lie perpendicular to the plane of
the drawing. The tip 11 can also be seen of the conductive rod 24 which
emits the ion beam 4. The magnets M1 and M2 cannot be seen in FIG. 4
since they respectively lie behind and in front of the plane of the
drawing.

[0057] The ion source 18 is a liquid metal ion source commonly abbreviated
to <<LMIS>>. Said LMIS is capable of generating a beam of
metal ions, e.g. a beam of gallium or aluminium ions. More precisely, a
current is passed through the conductive filament 5 which, by Joule
effect, heats the reservoir R of metal and the rod 24. The source metal
present in the reservoir R is therefore liquefied and spreads over the
surface of the rod 24 and notably over the tip 11. The extraction
electrode 12 pulls metal ions away from the layer of liquid metal
covering the apex of the tip 11.

[0058] The metal ions that are pulled away are attracted by the extraction
electrode 12 and pass through the opening 16. They exit the device 2 and
then the first level 44 in the form of a beam 4. The beam of ions 4
reaches the second level 46 where it is guided and focused onto a sample
52 located inside the work chamber 50. Treatment of the surface of the
sample 52 by the beam 4 occurs by moving the sample holder 54. The ion
beam 4 can be qualified as a primary beam, and the products induced by
use of the beam 4 on the sample 52 as secondary by-products.

[0059] The cryogenic trap 28 was added to the device 2 to make it
compatible with gas injection techniques frequently used in industrial
applications of ion generating devices. These injection techniques
consist of adding reagent gases or precursor gases to the work chamber 50
by means of one or more gas inlets such as inlet 48, in order to
diversify or to improve and accelerate the treatment of the samples 52 by
the ion beam 4.

[0060] A first of these techniques is deployed when the ion beam 4 is used
to etch a sample. Reagent gases are fed via the inlet 48 and exit the
latter in direction of the sample 52. The gases react with the atoms of
the sample 52 sputtered by the beam 4, forming volatile compounds. The
volatile compounds are evacuated by the pumping system of the work
chamber 50. This process improves the speed of etching since it
neutralizes and evacuates the debris from etching.

[0061] The injection technique is also used to deposit substances on a
sample. For this purpose, precursor gases are added via inlet 48 into the
work chamber 50, and their molecules are separated under the action of
the ion beam 4. The non-volatile compounds from this reaction then form a
solid deposit adhering to the surface of the sample 52.

[0062] Within the context of a liquid metal ion source, these injection
techniques have a major disadvantage. The gases injected into the work
chamber 50 diffuse inside the chamber and enter into the column 42. On
account of a favourable pressure gradient (the vacuum inside the first
level 44 is higher than the vacuum inside the work chamber 50), these
gases are conveyed as far as the source 18 and interact with the liquid
metal.

[0063] These interactions have extremely harmful effects on the ion source
18 and cause destabilising thereof. It therefore becomes impossible to
maintain the stability of ion emission over periods of several hours.

[0064] The cryogenic trap 28 allows the solving of this problem by
protecting the ion source 18 against vapours of injected gas. The liquid
source metal is therefore preserved. Through its cryogenic trap, the
device 2 for generating an ion beam is compatible with gas injection
techniques.

[0065] The cryogenic trap 28 operates in the following manner. Liquid
nitrogen 30 is caused to circulate inside the tube 38 to cool the wall 40
of the sheath 32 down to a temperature below 100 K. The sheath 32 thus
cooled forms a trap for the vapours of injected gas G which are
illustrated in FIGS. 1 and 3 by curved arrows. These volatile species G
enter into the column 42, pass through the second level 46 and reach the
first level 44 where they spread out into the space 9 surrounding the ion
beam generating device 2. The vapours G are halted on their pathway
towards the ion source 18 by the outer surface 23 of the wall 40 which
forms a barrier. Once stopped by the outer surface 23, the species G are
rapidly cooled and therefore lose a large part of their kinetic energy.
The species G are condensed on the outer surface 23 and are truly
<<trapped>>. Through lack of energy, they remain
<<glued>> to the cryogenic trap 28 and therefore can no
longer reach the ion source 18.

[0066] According to one variant of the invention, the cryogenic trap, as
cooling means, comprises a cryogenerator/mechanical refrigerator or an
electric refrigerator, preferably a device with so-called
<<Peltier>> effect, instead of a cryogenic fluid.

[0067] The magnetic filter M1, M2 was added to the device 2 to prevent the
secondary electrons 20 (cf. FIGS. 3 and 4) from reaching the ion source
18. These secondary electrons 20 are created by the impact of ions from
the ion beam 4 on the walls surrounding the device 2. They are attracted
by the local electric field of high intensity prevailing around the tip
11. If there is no magnetic field B, the secondary electrons 20 enter
inside the extraction electrode 12 via opening 16 and contaminate the ion
source 18.

[0068] By means of the magnetic field B at the opening 16, the secondary
electrons 20 are deflected from their pathway, as can be seen FIG. 4, and
are intercepted by the wall 14 of the extraction electrode 12 itself
generating an attractor electrostatic field. The secondary electrons 20
are thereby neutralized. The magnetic filter M1, M2 therefore protects
the liquid metal of the ion source 18 from the secondary electrons.

[0069] On the other hand, the influence of the magnetic field B on the
pathway of the metal ions emanating from the tip 11 of the rod 24 and
passing through the opening 16 is negligible. The metal ions effectively
have a much higher mass and kinetic energy than the secondary electrons.
Therefore, even in the presence of the magnetic field B, the pathway of
the metal ions remains essentially unchanged.

[0070] It is to be noted that the magnetic filter according to the
invention can also assume forms other than those just described. Indeed,
to attain the desired objective, any means may be sufficient provided
they are capable of generating a magnetic field adapted to prevent the
secondary electrons from reaching the ion source 18.

[0071] The device for generating an ion beam according to the invention
particularly has the following advantages: [0072] more stable operation
of the ion source at low emission current (<3 μA) through
elimination of the current of secondary electrons striking the emitting
tip; [0073] increased lifetime of the source; [0074] improved purity of
the emitted ion beam, through increased protection of the source; and
[0075] the obtaining of a more efficient pumping effect in the region of
the ion source allowing the source, in emission, to be maintained under a
high vacuum (10-8 mbar) thereby <<erasing>> the influence of
vacuum fluctuations related to sample loading and unloading operations,
which can therefore be multiplied at will without damaging the ion source
which can be left in operation.

[0076] To summarize, this device allows the integrity of the ion source to
be preserved, and hence allows spacing of the number and frequency of (i)
decontamination operations generally conducted by heating the source,
which require interrupted use, involve further adjustment of the
instrument and lead to loss of liquid metal through evaporation and of
(ii) replacements of sources which have reached the end of their
lifetime.

[0077] With the invention the productivity of the device can be improved,
since the user is able to maintain operational settings (optical centring
of the ion source in relation to the electrostatic optical system,
focusing and correction of residual astigmatism of the beam) over
considerably longer periods.