RF Micro Devices has announced a front end RF, the single-chip
RFFM6403, designed to reduce customer design time and speed customer
time-to-market in smart energy metering applications operating in the
405 to 475MHz frequency range, as well as for portable battery powered
equipment and general 433/470MHz ISM band systems.

The RFFM6403 integrates a transmit high power path
with a +30.5dBm PA and Tx harmonic output filtering, a transmit bypass
through path with Tx harmonic output filtering, and a receive path with a
low noise amplifier (LNA) with bypass mode. The FEM also features a low
insertion loss/high isolation SP3T switch and separate Rx/Tx 50O ports,
simplifying matching and providing input and output signals for both
the Tx and Rx paths.

The RFFM6403 is designed for systems operating with high efficiency
requirements and a minimum output power of 30 dBm. In the receive path,
the Rx chain provides 16 dB of typical gain with only 5 mA of current
and an excellent noise figure of 1.7 dB. The 6x6x1mm chip minimizes
product footprint at the customer device while reducing external
component count and associated assembly costs.