Abstract

Refractory metal silicide gate n‐channel MOSFET’s have been fabricated by rf sputtering from a hot‐pressed MoSi2 alloy target. The annealed MoSi2 sheet resistance was 2 Ω/⧠. The MOSFET’s were fabricated using plasma etching, projection alignment, and a fully ion‐implanted process. Typical values for a 1.7×1.7‐μm2 linear MOSFET are a threshold voltage of 1–1.5 V and a transconductance of 50–100 μmho. Short‐channel (length and width) and substrate effects on the threshold voltage are demonstrated.