Abstract

We report on the optical study of ultrathin (1–3 monolayers) InAs quantum wells in GaAs. The samples have been grown either by standard molecular beam epitaxy(MBE) or low‐temperature (350 °C) modulated‐fluxes MBE. The latter technique enlarges the range of pseudomorphic deposition of strained InAs layers on GaAs. Both types of samples display sharp (down to 6 meV spectral width) and intense low‐temperature excitonic photoluminescence, and a high in‐plane homogeneity. Higher energy optical transitions have been observed in both absorption and photoluminescence excitation experiments, performed on multiple quantum well structures.