The purpose of the collaborative program is to develop a multibeam electron-beam mask writer for use in advanced mask lithography applications below 10-nm while achieving high throughput.

The program is nearing the completion of a proof-of-concept phase and the upcoming phase of the collaboration will focus on the design and construction of an alpha and beta version of the multi-beam mask writer, IMS said.

"We are very encouraged by this partnership's goal of producing a mask writer with both accuracy and high productivity around 2015 for nodes beyond 10 nanometers. This project shows great potential for producing that breakthrough," said C.S. Yoo, head of e-beam operations at TSMC, in a statement issued by IMS.

No indication was given with regard to any financial commitment by TSMC or by the founding members.