News & Conferences

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MDLSoft will be participating at the EDTM in Kobe, Japan (March 12-15, 2018) as exhibitor and speaker (presenting a paper on “Defect spectroscopy from electrical measurements: a simulation-based technique.” In this paper we will present a Ginestra™-based defect spectroscopy technique for extracting defect and material properties of gate oxides and dielectrics).

In this paper the authors use physics-based breakdown simulations to investigate the time dependent dielectric breakdown (TDDB) distributions of SiO2 and HfO2 stacks. They show that the low thickness-independent TDDB Weibull slope (b) measured in HfO2 originates from the high intrinsic density and spatially correlated defect generation process. They prove also that the double slope observed in TDDB distributions of IL-HfOx stacks is also related to the stochastic nature of the bond breakage process in SiO2 and HfO2.

MDLSOft continues to push the boundaries of the IM2D (Integrated Materials to Devices) flow with the release of GINESTRA v 2.1. The release includes new features such as Defect Spectroscopy, MOSFET Simulator, Ferroelectric Devices Simulator and significantly enhanced Output Viewer

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