Abstract

The first stages of the formation of the so called ‘‘new donors’’ is studied by annealing initially n‐type Czochralski silicon at 580 °C for 24–360 h. The analysis of electrical properties using the admittance spectroscopy technique reveals that the freezing of carriers is controlled by an activation energy of 20 meV, and a discrete level is detected at 19 meV. These effects are tentatively ascribed to levels localized within quantum wells surrounding small positively charged oxide precipitates.