Abstract

InN films have been grown on GaAs(111) and GaP(111) substrates using microwave‐excited metalorganic vapor phase epitaxy. Trimethylindium and nitrogen were used as the source materials. It is revealed that epitaxial InN films can be obtained on GaAs (111) and GaP(111) by exposing the substrate to nitrogen plasma before the growth and that the crystalline quality of the InN films is strongly dependent on exposing time. All films have a wurtzite structure and display the InN(0001)// GaAs(111), InN(0001)//GaP(111) orientation.