Power devices market overview

Demand for wide bandgap power semiconductor components is principally driven by growth of the hand-held devices market, where efficient power management is appreciated key requirement.

The exponential growth in the adoption of green energy sources for industrial and consumer markets (wind power, solar cells, electric vehicles, etc.) is another driver for wide bandgap semiconductors. These materials are a critical part of high current/high voltage devices.

CORIAL solutions

Silicon carbide (SiC) and gallium nitride (GaN) are materials of choice in the manufacture of power semiconductor devices.

SiC DRIE

SiC via etch

SiC feature etch

Etch depth > 1 µm

Etch rate 0.8 µm/min

Roughness < 5 nm

GaN feature etch

Anisotropic etch

Etch rate 200 nm/min

Low plasma damage

Deposition processes

Typical plasma enhanced deposition applications for power device manufacturing include passivation, dielectrics, and masks. CORIAL’s PECVD tools are designed to ensure tight control of film stress, from tensile to compressive, and to produce high deposition rates films without any compromise in uniformity or film quality. CORIAL also offers low temperature and low damages PECVD processes for nitride and oxide films.