This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17424.

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

W39V040FC : Parallel Flash The W39V040FC is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K x 8 bits. For flexible erase capability, the 4Mbits of data are divided into 16 x 8 Kbytes pages and 6 x 64 Kbytes sectors or 8 x 64 Kbytes sectors. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is required.

M3E52XPA : 14 pin DIP, 3.3 Volt, Ecl/pecl, Clock Oscillator. MtronPTI reserves the right to make changes to the product(s) and service(s) described herein without notice. No liability is assumed as a result of their use or application. Please see www.mtronpti.com for our complete offering and detailed datasheets. Contact us for your application specific requirements: MtronPTI 1-800-762-8800. .