Summary: Lasing of donor-bound excitons in ZnSe microdisks
A. Pawlis,1,2,* M. Panfilova,1 D. J. As,1 K. Lischka,1 K. Sanaka,2 T. D. Ladd,2 and Y. Yamamoto2
1Department of Physics, University of Paderborn, Warburger Strasse 100, 33098 Paderborn, Germany
2Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4088, USA
and National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan
Received 6 March 2008; published 18 April 2008
Excitons bound to fluorine atoms in ZnSe have the potential for several quantum optical applications.
Examples include optically accessible quantum memories for quantum information processing and lasing
without inversion. These applications require the bound-exciton transitions to be coupled to cavities with high
cooperativity factors, which results in the experimental observation of low-threshold lasing. We report such
lasing from fluorine-doped ZnSe quantum wells in 3 and 6 m microdisk cavities. Photoluminescence and
selective photoluminescence spectroscopy confirm that the lasing is due to bound-exciton transitions.
DOI: 10.1103/PhysRevB.77.153304 PACS number s : 78.55.Et, 03.67. a, 42.55.Sa, 78.67. n
Quantum interference of the two optical pathways of an
optical system, in which two long-lived ground states are
optically coupled to a single excited state, provides a power-
ful mechanism for a number of useful applications. These
applications include lasing without inversion,1
electromag-
netically induced transparency,2