modified version of the damascene process which is used to form metal interconnect geometry using CMP process instead of metal etching; in dual damascene two interlayer dielectric patterning steps and one CMP step create a pattern which would require two patterning steps and two metal CMP steps when using conventional damscene process.

damascene

process in which interconnect metal lines are delineated in dielectrics isolating them from each other not by means of lithography and etching, but by means of chemical-mechanical planarization (CMP); in this process interconnect pattern is first lithographically defined in the layer of dielectric then metal is deposited to fill resulting trenches and then excess metal is removed by means of chemical-mechanical polishing (planarization).

CMP

Chemical Mechanical Polishing, Chemical Mechanical Planarization, method of removing layers of solid by chemical-mechanical polishing carried out for the purpose of surface planarization and definition of metal interconnect pattern; key process in back-end of line IC manufacturing.