Abstract

An expression is derived for the thermoelectric power of the electrons in degenerate n‐AII3BV2semiconductors in the presence of a classically large magnetic field by considering the anisotropies in the band parameters within the framework of k⋅p formalism. It is found, taking n‐Cd3As2 as an example, that the thermoelectric power decreases with increasing electron concentration and the theoretical formulation is in agreement with the experimental observation as reported elsewhere. In addition, the well‐known results for parabolic semiconductors are also obtained from the generalized expressions as special cases.