4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave
applications. The diodes exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of
1-3 &, a capacitance below 0.5 pF at a punchthrough voltage of 100 V and a carrier effective
lifetime between 15-27 ns. Single 4H-SiC p-i-n diode switches, operating in X-band, exhibited
insertion loss 0.7 dB, isolation up to 25 dB and were able to handle microwave power up to 2.2 kW
in pulsed mode of operation. The switching speed of the switches has not exceeded 20 ns.