Abstract

Ultrashort-cavity, thin-film lasers from In1−xGaxAsyP1−y of five different compositions, including InP and In0.53Ga0.47As, have been made to lase between 0.83 and 1.59 μm. The multitude of lasing wavelengths observed had line-to-line separations of less than 10 nm. The lasers were pumped with 1-psec pulses from a mode-locked dye laser. An output pulse of 6-psec duration was measured at a wavelength of 1.16 μm.

Figures (4)

Details of epitaxially grown In1−xGax-AsyP1−y structures from which laser films were obtained: (a)–(d) were grown by liquid-phase epitaxy and (e) was grown by molecular-beam epitaxy. InP film obtained in (a) was then etched to a thickness of less than 1 μm.

Photograph of a film laser taken with monochromatic light. Fringes show thickness variation between top of In-GaAsP film and upper dielectric mirror. The absence of fringes surrounding the sample shows that the dielectric mirrors are well aligned.