Abstract

We propose and simulate a novel terahertz QCL design based on a new depopulation mechanism which relies on resonant Gamma-X electron transfer. The ultrafast scattering rates between Gamma- and X-valley states is used to depopulate the lower laser level in a modified GaAs/AlGaAs THz QCL structure. The new QCL design is realised by increasing the Al content of the collection barrier to bring a confined X-state in resonance with the lower laser level. Our results show that under such conditions population inversion can be achieved between the two lasing states. Furthermore, the new design may achieve improved temperature operation compared to existing designs. (C) 2009 Elsevier B.V. All rights reserved.

Type:

Article

Title:

Design and simulation of a THz QCL based on Gamma-X depopulation mechanism