Addressing the need for an up-to-date reference on silicon devices
and heterostructures, Beyond the Desert 99 reviews the technology
used to grow and characterize Goup IV alloy films. It covers the
theory, device design, and simulation of heterojunction
transistors, emphasizing their relevance in developing the
technologies involving strained layers; device design and
simulation of conventional silicon bipolar transistors and SiGe
HBTs at room and low temperatures; and device design and simulation
for MOSFETs, including SiGe and strained-Si channel MOSFETs. The
book concludes with simulations and examples of different
applications. It provides a unified reference for scientists and
engineers investigating the use of SiGe and strained silicon in a
new generation of high-speed circuit applications.