A com­plete tech­no­logy line for the fabri­ca­tion of micro­elec­tro­nic devi­ces and sys­tems up to the phase of tech­no­logy demonstrator/prototype set in a clean room of >600 m2 area with class 10, 100, 1000 and 10000 sec­tions. The line is com­po­sed of the fol­lo­wing tech­no­logy nodes:

- depo­si­tion of thin semi­con­duc­ting, metal­lic as well as low k and high k die­lec­tric films (sput­te­ring, e-beam depo­si­tion and ato­mic layer depo­si­tion)

Inte­ro­pe­ra­tio­nal and post-process cha­rac­te­ri­za­tion of mate­rial and devi­ces for the deter­mi­na­tion of their struc­tu­ral, opti­cal, che­mi­cal and elec­tri­cal pro­per­ties by means of XRD, AFM, SEM, RBS and RBS-channeling spec­tro­me­try, I-V and C-V measu­re­ments, Vol­tam­me­tric measu­re­ments as well as Raman and pho­to­lu­mi­ne­scence spec­tro­scopy.