Category

Published on

22 Mar 2016

Abstract

nanoMOS

nanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of three transport models is currently available (drift-diffusion, classical ballistic, and quantum ballistic). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson’s equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.

Major nanoMOS versions in the past

nanoMOS 1.0

Original nanoMOS code for silicon MOSFETs. Written in Matlab and developed by Zhibin Ren in 2000.

nanoMOS 2.0

Addition of Rappture interface support on nanohub.org

nanoMOS 3.0

Support for III-V materials in semi-classical and quantum ballistic transport models.

nanoMOS 3.5

Support for additional materials, enhanced drift-diffusion capabilities, and extensions and code restructuring for developers.

06/23/2009 A bug associated with temperature and mobility has been fixed. Now user can adjust the temperature and mobility model parameters and see the effects in output.

Credits

nanoMOS 1.0 was written in Matlab and developed by Zhibin Ren as part of his doctoral work at Purdue University. The development of NanoMOS was supported by the Semiconductor Research Corporation and by the Army Research Office through a Defense University Research Initiative on Nanotechnology grant.

Varies other people are also involved in the future development and expansion of nanoMOS. For the complete credits, please see the contributor list above.