Abstract

We report our results of experimental study of photovoltage induced by pulsed CO2 laser in GaAs p-n and 1-h junctions. We demonstrate that photoemission of hot carriers across the potential barrier and the crystal lattice heating are the dominant mechanisms in the photovoltage formation. The obtained results show that hot-carrier effects in inhomogeneous GaAs can be used to detect very short infrared laser pulses.

Abstract

We report our results of experimental study of photovoltage induced by pulsed CO2 laser in GaAs p-n and 1-h junctions. We demonstrate that photoemission of hot carriers across the potential barrier and the crystal lattice heating are the dominant mechanisms in the photovoltage formation. The obtained results show that hot-carrier effects in inhomogeneous GaAs can be used to detect very short infrared laser pulses.