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Abstract:

According to one exemplary embodiment, an overmolded package includes a
component situated on a substrate. The overmolded package further
includes an overmold situated over the component and the substrate. The
overmolded package further includes a wirebond cage situated over the
substrate and in the overmold, where the wirebond cage surrounds the
component, and where the wirebond cage includes a number of wirebonds.
The wirebond cage forms an EMI shield around the component. According to
this exemplary embodiment, the overmolded package further includes a
conductive layer situated on a top surface of the overmold and connected
to the wirebond cage, where the conductive layer forms an EMI shield over
the component.

Claims:

1. A method for fabricating a packaged module, the method comprising:
providing a packaging substrate having a reference potential layer;
mounting one or more components on a surface of the packaging substrate;
forming a plurality of wirebonds on the packaging substrate so as to be
arranged about the one or more components, each wirebond electrically
connected to the reference potential layer; forming an overmold that
substantially encapsulates the one or more components and the wirebonds,
the overmold defining an upper surface where upper portions of the
wirebonds are exposed; and forming a conductive layer on the upper
surface of the overmold so as to be in electrical contact with the upper
portions of the wirebonds.

2. The method of claim 1 wherein the conductive layer, the wirebonds, and
the reference potential layer are configured so as to provide
electromagnetic shielding for at least a portion of a volume surrounding
the one or more components.

3. The method of claim 1 wherein the conductive layer, the wirebonds, and
the reference potential layer are dimensioned so as to define a volume
surrounding the one or more components and provide electromagnetic
shielding between interior and exterior locations of the volume.

4. The method of claim 1 wherein the packaging substrate includes a
laminate substrate.

5. The method of claim 1 wherein the mounting of one or more components
includes mounting a semiconductor die having a radiofrequency (RF)
circuitry.

6. The method of claim 1 wherein the mounting of one or more components
includes mounting a discrete electronic device.

7. The method of claim 6 wherein the discrete electronic device includes
a passive device.

8. The method of claim 1 wherein the forming wirebonds includes forming a
plurality of upwardly extending wirebonds, each wirebond having a first
end attached to a bond pad on the surface of the packaging substrate and
a second end in contact with the conductive layer.

9. The method of claim 1 wherein the forming of wirebonds includes
forming a plurality of curved wirebonds, each curved wirebond having
first and second ends that begin and end at the surface of the packaging
substrate, respectively.

10. The method of claim 9 wherein at least one of the first and second
ends of the curved wirebond is attached to a bond pad on the surface of
the packaging substrate.

11. The method of claim 9 wherein the curved wirebond has a loop shape
such that the upper portion of the wirebond is at a point or a segment
between the first and second ends.

12. The method of claim 9 wherein the each of the curved wirebonds
defines a plane that is approximately normal to a plane defined by the
surface of the substrate.

13. The method of claim 12 wherein the curved wirebonds are arranged such
that their planes extend along a perimeter about the one or more
components.

14. The method of claim 13 wherein the perimeter defines a rectangular
shape.

15. The method of claim 1 wherein the forming of overmold includes:
providing a molding compound such that the molding compound encapsulates
the one or more components and the wirebonds to a height that is greater
than heights of at least some of the wirebonds; and removing a top
portion of the molding compound so as to yield the upper surface of the
overmold and expose the upper portions of the wirebonds including the at
least some of the wirebonds that were covered by the molding compound.

16. The method of claim 15 wherein the removing of top portion includes a
mechanical removal process.

17. The method of claim 1 wherein the forming of conductive layer
includes spraying process so as to yield the conductive layer.

18. A method for manufacturing a portable radio-frequency (RF) device,
the method comprising: providing a circuit board; and mounting a packaged
device on the circuit board, the packaged device including a packaging
substrate having a surface and including a reference potential layer at
or below the surface; at least one semiconductor die mounted on the
surface of the packaging substrate; a plurality of wirebonds disposed on
the surface of the packaging substrate and arranged about the at least
one semiconductor die, each wirebond electrically connected to the
reference potential layer and electrically isolated from the
semiconductor die at locations above the surface of the packaging
substrate; an overmold dimensioned to substantially encapsulate the at
least one semiconductor die and the wirebonds, the overmold defining an
upper surface where upper portions of the wirebonds are exposed; and a
conductive layer on disposed on the upper surface of the overmold so as
to be in electrical contact with the upper portions of the wirebonds.

19. The method of claim 18 wherein the RF device includes a cellular
phone.

20. A method of forming an overmolded package, the method comprising:
forming a wirebond cage around a component situated on a substrate, the
wirebond cage including a plurality of wirebonds such that the wirebond
cage forms an EMI shield around the component; and forming an overmold
over the component and the substrate, the overmold encapsulating the
wirebond cage so as to define a top surface where portions of at least
some of the wirebonds are exposed.

21. The method of claim 20 further comprising forming a conductive layer
on the top surface of the overmold, the conductive layer in electrical
contact with the wirebond cage through the exposed portions of the
wirebonds, the conductive layer forming an EMI shield over the component.

22. The method of claim 21 wherein each of the plurality of wirebonds
includes a first end and a second end, the first end connected to a bond
pad situated on the substrate and the second end connected to the
conductive layer.

23. The method of claim 21 wherein each of the plurality of wirebonds
includes first and second ends and a middle portion, at least one of the
first and second ends connected to a bond pad situated on the substrate
and the middle portion connected to the conductive layer.

Description:

RELATED APPLICATIONS

[0001] This application is continuation of U.S. application Ser. No.
12/970,705, filed on Dec. 16, 2010, entitled "OVERMOLDED SEMICONDUCTOR
PACKAGE WITH A WIREBOND CAGE FOR EMI SHIELDING," which is a divisional of
U.S. patent application Ser. No. 11/499,285, filed on Aug. 4, 2006,
entitled "OVERMOLDED SEMICONDUCTOR PACKAGE WITH A WIREBOND CAGE FOR EMI
SHIELDING," which is a continuation-in-part of, and claims benefit of the
filing date of, U.S. patent application Ser. No. 10/793,618, filed on
Mar. 4, 2004, now U.S. Pat. No. 7,198,987, entitled "OVERMOLDED
SEMICONDUCTOR PACKAGE WITH AN INTEGRATED EMI AND RFI SHIELD," each of
which is hereby incorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention is generally in the field of semiconductor
devices. More particularly, the invention is in the field of
semiconductor device packaging.

[0004] 2. Related Art

[0005] Portable electronic devices, such as cell phones, typically utilize
multi-component semiconductor modules to provide a high level of circuit
integration in a single molded package. The multi-component semiconductor
module can include, for example, a semiconductor die and a number of
electronic components, which are mounted on a circuit board. The circuit
board including the semiconductor die and electronic components can be
encapsulated in a molding process to form an overmolded semiconductor
package. To ensure an acceptable level of performance in devices such as
cell phones, which are required to properly operate in diverse
environments, the overmolded semiconductor package must be shielded from
Electro-Magnetic Interference (EMI), which includes Radio Frequency
Interference (RFI). However, semiconductor device manufacturers are
challenged to provide effective EMI shielding for an overmolded
semiconductor package without increasing the size of the package and
without substantially increasing packaging cost.

[0006] In one approach, EMI shielding is provided a prefabricated metal
shield, which is formed over the overmolded semiconductor package. The
prefabricated metal shield typically includes a wall, which is formed
around the overmolded semiconductor package, and a cover, which is
attached to the wall and situated a sufficient distance above the
overmolded package to avoid interfering with the package. As a result,
the prefabricated metal shield undesirably increases the thickness of the
final overmolded package. Also, the formation of the prefabricated metal
shield requires an extra process step and additional materials, which
significantly increases packaging cost.

[0007] In another approach, conductive foam or rubber is applied over the
overmolded semiconductor package to absorb and trap EMI. However, the
conductive foam or rubber must be applied manually and requires special
materials and an extra process, which significantly increases packaging
cost. Additionally, the conductive foam or rubber undesirably increases
the thickness of the final overmolded package.

[0008] Thus, there is a need in the art for a cost-effective EMI shield
for an overmolded semiconductor package that does not substantially
increase package thickness.

SUMMARY OF THE INVENTION

[0009] The present invention is directed to an overmolded semiconductor
package with a wirebond cage for EMI shielding. The present invention
addresses and resolves the need in the art for a cost-effective EMI
shield for an overmolded semiconductor package that does not
substantially increase package thickness.

[0010] According to one exemplary embodiment, an overmolded package
includes a component situated on a substrate. For example, the component
can be an active device or a passive device. The overmolded package
further includes an overmold situated over the component and the
substrate. The overmolded package further includes a wirebond cage
situated over the substrate and in the overmold, where the wirebond cage
surrounds the component, and where the wirebond cage includes a number of
wirebonds. The wirebond cage forms an EMI shield around the component.

[0011] According to this exemplary embodiment, the overmolded package
further includes a conductive layer situated on a top surface of the
overmold and connected to the wirebond cage, where the conductive layer
forms an EMI shield over the component. For example, the conductive layer
may be conductive ink. For example, each of the wirebonds can have a
first and second ends and a middle portion, where the first and second
ends are connected to respective bond pads on the substrate and the
middle portion is connected to the conductive layer. For example, each of
the wirebonds can have first and second ends, where the first end is
connected to a bond pad on the substrate and the second end is connected
to the conductive layer.

[0012] According to one embodiment, the invention is a method for
achieving the above-described structure. Other features and advantages of
the present invention will become more readily apparent to those of
ordinary skill in the art after reviewing the following detailed
description and accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013]FIG. 1A illustrates a top view of an exemplary overmolded
semiconductor package in accordance with one embodiment of the present
invention.

[0021]FIG. 5 is a flowchart corresponding to exemplary method steps
according to one embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0022] The present invention is directed to an overmolded semiconductor
package with a wirebond cage for EMI shielding. The following description
contains specific information pertaining to the implementation of the
present invention. One skilled in the art will recognize that the present
invention may be implemented in a manner different from that specifically
discussed in the present application. Moreover, some of the specific
details of the invention are not discussed in order not to obscure the
invention.

[0023] The drawings in the present application and their accompanying
detailed description are directed to merely exemplary embodiments of the
invention. To maintain brevity, other embodiments of the present
invention are not specifically described in the present application and
are not specifically illustrated by the present drawings.

[0024]FIG. 1A shows a top view of an exemplary overmolded semiconductor
package in accordance with one embodiment of the present invention.
Certain details and features have been left out of FIG. 1A that are
apparent to a person of ordinary skill in the art. Overmolded
semiconductor package 100, which is also referred to as an "overmolded
package" in the present application, includes component 102, bond pads
104a, 104b, 104c, and 104d (hereinafter "bond pads 104a through 104d"),
wirebond cage 106, and conductive layer 108. Wirebond cage 106 includes a
number of wirebonds, such as wirebonds 110a and 110b. It is noted that
only bond pads 104a through 104e and wirebonds 110a through 110e are
discussed in detail herein to preserve brevity.

[0025] As shown in FIG. 1A, component 102 is situated on a substrate (not
shown in FIG. 1A). Component 102 can be an active device, such as a
semiconductor die, which can include RF circuitry, for example. In one
embodiment, component 102 can be a passive device, such as an inductor.
Also shown in FIG. 1A, bond pads 104a through 104d are situated on and
along the perimeter of the substrate (not shown in FIG. 1A). Bond pads
104a through 104d can comprise a metal such as copper or aluminum and can
be formed, for example, by depositing and patterning a layer of metal,
such as copper or aluminum, and plating the layer of metal with gold.
Bond pads 104a through 104d can be connected to a reference potential
(not shown in FIG. 1A), which can be any constant DC plane that does not
have an AC component.

[0026] Further shown in FIG. 1A, respective ends of wirebond 110a are
situated on bond pads 104a and 104b and respective ends of wirebond 110b
are situated on bond pads 104c and 104d. Thus, wirebond 110a forms a loop
that extends between bond pads 104a and 104b and wirebond 110b forms a
loop that extends between bond pads 104c and 104d. Wirebonds 110a and
110b can comprise gold or other suitable metal, for example. The
respective ends of wirebond 110a can be attached to bond pads 104a and
104b and the respective ends of wirebond 110b can be attached to bond
pads 104c and 104d by utilizing a suitable bonding process, for example.
Wirebonds 110a and 110b form a portion of wirebond cage 106, which
extends along the perimeter of the substrate (not shown in FIG. 1A).

[0027] Also shown in FIG. 1A, conductive layer 108 is situated on an
overmold (not shown in FIG. 1A). Conductive layer 108 is also situated
over component 102, bond pads 104a through 104d, wirebonds 110a and 110b,
and the substrate (not shown in FIG. 1A). In the present embodiment,
conductive layer 108 can comprise a conductive coating, such as a
conductive ink, which can include copper, silver, or other conductive
metals. In another embodiment, conductive layer 108 can comprise a layer
of copper, aluminum, or other suitable metal. Conductive layer 108 is
connected to a middle portion of each of the wirebonds (e.g. wirebonds
110a and 110b) in wirebond cage 106. Conductive layer 108 and wirebonds
110a and 110b will be further discussed below in relation to FIG. 1B.

[0028] Referring now to FIG. 1B, a cross-sectional view is shown of
overmolded semiconductor package 100 in FIG. 1A along line 1B-1B in FIG.
1A. In particular, component 102, bond pads 104a through 104d, wirebond
cage 106, conductive layer 108, and wirebonds 110a and 110b correspond to
the same elements in FIG. 1A and FIG. 1B. As shown in FIG. 1B, component
102 and bond pads 104a through 104d are situated on substrate 114, which
can comprise a ceramic material, a laminate material, or other suitable
type of material. Although not shown in FIG. 1B, substrate 114 can
include a patterned metal layer on top and bottom substrate surfaces and
vias, for example.

[0029] Also shown in FIG. 1B, the respective ends of wirebond 110a are
situated on bond pads 104a and 104b and middle portion 111 of wirebond
110a is in contact with conductive layer 108. Further shown in FIG. 1B,
the respective ends of wirebond 110b are situated on bond pads 104c and
104d and middle portion 113 of wirebond 110b is in contact with
conductive layer 108. Also shown in FIG. 1B, the ends of each wirebond
(e.g. wirebonds 110a and 110b) are separated by wirebond loop width 120
and adjacent wirebonds (e.g. wirebonds 110a and 110b) are separated by
wirebond spacing 122. In the embodiment in FIGS. 1A and 1B, wirebond loop
width 120 can be different than wirebond spacing 122. In one embodiment,
wirebond loop width 120 can be substantially equal to wirebond spacing
122. Wirebond loop width 120 and wirebond spacing 122 can each range in
value from microns to millimeters, for example. In the embodiment in
FIGS. 1A and 1B, wirebond loop width 120 and wirebond spacing 122 can be
selected to achieve EMI shielding for a particular frequency or a
particular range of frequencies.

[0030] Further shown in FIG. 1B, overmold 116 is situated over component
102, bond pads 104a through 104d, and substrate 114 and encapsulates
wirebond cage 106, which includes wirebonds 110a and 110b. Overmold 116
can comprise epoxy or other suitable molding compound and can be formed
in a molding process in a manner known in the art. Also shown in FIG. 1B,
conductive layer 108 is situated on top surface 118 of overmold 116 and
situated over component 102, bond pads 104a through 104d and substrate
114. Conductive layer 108 is also situated over and in contact with
wirebonds 110a and 110b. Conductive layer 108 has thickness 124, which
can be between 25.0 microns and 50.0 microns, for example. In other
embodiments, thickness 124 can be between 5.0 microns and 100.0 microns.
Conductive layer 108 has height 126, which refers to the distance between
the top surface of substrate 114 and top surface 118 of overmold 116.
Height 126 can be approximately 1.0 mm, for example. However, height 126
may also be greater or less than 1.0 mm.

[0031] In overmolded semiconductor package 100, conductive layer 108 and
wirebond cage 106, which are electrically connected together, form an EMI
shield for component 102. The EMI shield can be formed during formation
of overmolded semiconductor package 100 by bonding the ends of wirebonds
to respective bond pads, which can be formed on the top surface of
substrate 114. The ends of wirebond 110a can be bonded to respective bond
pads 104a and 104b, for example. Overmold 116 can then be formed by
utilizing a mold compound, such as epoxy, in a molding process as known
in the art to cover component 102, the bond pads (e.g. bond pads 104a
through 104d), and the top surface of substrate 114 and to encapsulate
the wirebonds (e.g. wirebonds 110a and 110b) that form wirebond cage 106.

[0032] Overmold 116 is desirably formed such that the center portion of
each wirebond (e.g. center portions 111 and 113 of respective wirebonds
110a and 110b) in wirebond cage 106 is exposed above top surface 118 of
overmold 116. However, overmold 116 may inadvertently cover the center
portions of the wirebonds in wirebond cage 106. In such case, the
covering portion of overmold 116 can be removed from the center portions
of the wirebonds by utilizing a laser abrasion process, a mechanical
milling process, a diamond polish process, or other suitable process.
Conductive layer 108 can then be formed by utilizing a screen printing
process, spraying process, electroplating process, thermal spray
deposition process, or other suitable process to apply a layer of
conductive ink on top surface 118 of overmold 116 and on the exposed
center portions of the wirebonds in wirebond cage 106. In an embodiment
in which conductive layer 108 comprises a layer of metal, the layer of
metal can be deposited on top surface 118 of overmold 116 and on the
exposed center portions of the wirebonds by utilizing a chemical vapor
deposition (CVD) process or other suitable deposition processes.

[0033] In the embodiment in FIGS. 1A and 1B, the invention's overmolded
package includes conductive layer 108, which provides EMI shielding over
component 102, and wirebond cage 106, which provides EMI shielding around
component 102. Thus, in the embodiment in FIGS. 1A and 1B, the invention
utilizes a conductive layer and a wirebond cage to achieve an effective
EMI shield for an overmolded package. For example, in the embodiment in
FIGS. 1A and 1B, the invention can provide an EMI shield between a
component, such as an active device, inside the overmolded package and
the environment outside of the package.

[0034] Also, by forming an EMI shield that includes a wirebond cage, which
includes multiple wirebonds, and a conductive layer, which is formed over
an overmold, the invention advantageously achieves an EMI shield having a
low manufacturing cost compared to a conventional prefabricated metal
shield. Additionally, the conductive layer in the invention's EMI shield
is significantly thinner than metal utilized to form the conventional
prefabricated metal shield. As a result, the invention's EMI shield
results in a thinner overmolded package compared to an overmolded package
that includes a conventional prefabricated metal shield.

[0035] Furthermore, by utilizing wirebonds to form an EMI shield, the
invention provides an EMI shield having a flexible design that can more
easily accommodate variations in package size and has increased
scalability compared to a conventional prefabricated metal shield.
Moreover, since wirebonds are significantly thinner than the walls of the
conventional prefabricated metal shield, the invention's EMI shield
consumes less space in the overmolded package compared to the
conventional prefabricated metal shield.

[0036]FIG. 2A shows a top view of an exemplary overmolded semiconductor
package in accordance to one embodiment of the present invention. Certain
details and features have been left out of FIG. 2A that are apparent to a
person of ordinary skill in the art. Overmolded semiconductor package
200, which is also referred to as an "overmolded package" in the present
application, includes components 202 and 203, bond pads 204a, 204b, 204c,
and 204d (hereinafter "bond pads 204a through 204d"), bond pads 205a,
205b, 205c, and 205d (hereinafter "bond pads 205a through 205d"),
wirebond cage 206, and conductive layer 208. Wirebond cage 206 includes
wirebond cage section 207, which includes wirebonds 210a and 210b, and
wirebond cage section 209, which includes wirebonds 215a and 215b. It is
noted that only bond pads 204a through 204d and 205a through 205d and
wirebonds 210a, 210b, 215a, and 215b are discussed in detail herein to
preserve brevity.

[0037] As shown in FIG. 2A, components 202 and 203 are situated on a
substrate (not shown in FIG. 2A). In the embodiment in FIG. 2A,
components 202 and 203 can each be an active device, such as a
semiconductor die, which can include RF circuitry, for example. In one
embodiment, component 202 can be a passive device, such as an inductor,
and component 203 can be an active device, such as a semiconductor die.
In another embodiment, components 202 and 203 can each be a passive
device. Also shown in FIG. 2A, bond pads 204a through 204d and 205a
through 205d are situated on the substrate (not shown in FIG. 2A) and are
substantially similar in composition and formation to bond pads 104a
through 104d in FIGS. 1A and 1B. Bond pads 204a through 204d and 205a
through 205d can be connected to a reference potential (not shown in FIG.
2A), which can be any constant DC plane that does not have an AC
component.

[0038] Further shown in FIG. 2A, respective ends of wirebond 210a are
situated on bond pads 204a and 204b and respective ends of wirebond 210b
are situated on bond pads 204c and 204d. Wirebonds 210a and 210b are
substantially similar in composition and formation to wirebonds 110a and
110b in FIGS. 1A and 1B. Also shown in FIG. 2A, respective ends of
wirebond 215a are situated on bond pads 205a and 205b and respective ends
of wirebond 215b are situated on bond pads 205c and 205d. Wirebonds 215a
and 215b are also substantially similar in composition and formation to
wirebonds 110a and 110b in FIGS. 1A and 1B. Wirebonds 210a and 210b form
a portion of wirebond cage section 207, which extends along the perimeter
of the substrate (not shown in FIG. 2A), and wirebonds 215a and 215b form
a portion of wirebond cage section 209, which is situated between
components 202 and 203.

[0039] Further shown in FIG. 2A, in wirebond cage section 207, the ends of
each wirebond (e.g. wirebond 210a) are separated by wirebond loop width
220 and adjacent wirebonds (e.g. wirebonds 210a and 210b) are separated
by wirebond spacing 222. In wirebond cage section 209, the ends of each
wirebond (e.g. wirebonds 215a) are separated by wirebond loop width 221
and adjacent wirebonds (e.g. wirebonds 215a and 215b) are separated by
wirebond spacing 223. In the embodiment in FIG. 2A, wirebond loop width
220 can be different than wirebond spacing 222 and wirebond loop width
221 can be different than wirebond spacing 223. Also, wirebond loop width
220 can be different than wirebond loop width 221 and wirebond spacing
222 can be different than wirebond spacing 223. In one embodiment,
wirebond loop width 220 can be substantially equal to equal to wirebond
spacing 222 and wirebond loop width 221 can be substantially equal to
wirebond spacing 223. Wirebond loop widths 220 and 221 and wirebond
spacings 222 and 223 can each range in value from microns to millimeters,
for example. The value of each of wirebond loop widths 220 and 221 and
wirebond spacings 222 and 223 can be selected to provide EMI shielding
for a particular frequency or range of frequencies.

[0040] Also shown in FIG. 2A, conductive layer 208 is situated on an
overmold (not shown in FIG. 2A) and also situated over components 202 and
203, bond pads 204a through 204d and 205a through 205d, wirebonds 210a,
210b, 215a, and 215b, and the substrate (not shown in FIG. 2A).
Conductive layer 208 is substantially similar in composition and
formation to conductive layer 108 in FIGS. 1A and 1B. In the embodiment
in FIG. 2A, conductive layer 208 can comprise a conductive coating, such
as a conductive ink. In another embodiment, conductive layer 208 can
comprise a layer of copper, aluminum, or other suitable metal. Conductive
layer 208 is connected to a middle portion of each of the wirebonds (e.g.
wirebonds 210a and 210b) in wirebond cage section 207 and connected to a
middle portion of each of the wirebonds (e.g. wirebonds 215a and 215b) in
wirebond cage section 209. Conductive layer 208 and wirebonds 210a and
210b will be further discussed below in relation to FIG. 2B.

[0041] Referring now to FIG. 2B, a cross-sectional view is shown of
overmolded semiconductor package 200 in FIG. 2A along line 2B-2B in FIG.
2A. In particular, components 202 and 203, bond pads 204a through 204d,
wirebond cage 206, wirebond cage section 207, conductive layer 208, and
wirebonds 210a and 210b correspond to the same elements in FIG. 2A and
FIG. 2B. As shown in FIG. 2B, components 202 and 203 and bond pads 204a
through 204d are situated on substrate 214, which is substantially
similar in composition to substrate 114 in FIGS. 1A and 1B. Also shown in
FIG. 2B, the respective ends of wirebond 210a are situated on bond pads
204a and 204b and middle portion 211 of wirebond 210a is in contact with
conductive layer 208. Further shown in FIG. 2B, the respective ends of
wirebond 210b are situated on bond pads 204c and 204d and middle portion
213 of wirebond 210b is in contact with conductive layer 208.

[0042] Further shown in FIG. 2B, overmold 216 is situated over components
202 and 203, bond pads 204a through 204d, and substrate 214 and
encapsulates wirebond cage 206, which includes wirebonds 210a and 210b.
Overmold 216 is substantially similar in composition and formation to
overmold 116 in FIG. 1B. Also shown in FIG. 2B, conductive layer 208 is
situated on top surface 218 of overmold 216 and situated over components
202 and 203, bond pads 204a through 204d and substrate 214. Conductive
layer 208 is also situated over and in contact with wirebonds 210a and
210b. Conductive layer 208 is substantially similar in composition,
thickness, and formation to conductive layer 108 in FIGS. 1A and 1B.

[0043] In overmolded semiconductor package 200, conductive layer 208 and
wirebond cage 206, which are electrically connected together, form an EMI
shield for components 202 and 203. In the embodiment in FIGS. 2A and 2B,
the EMI shield, which includes conductive layer 208 and wirebond cage
206, can be formed in a similar manner as the EMI shield in the
embodiment in FIGS. 1A and 1B.

[0044] In the embodiment in FIGS. 2A and 2B, the invention's overmolded
package includes conductive layer 208, which provides EMI shielding over
components 202 and 203, wirebond cage section 207, which provides EMI
shielding around components 202 and 203, and wirebond cage section 209,
which provides EMI shielding between components 202 and 203. Thus, in the
embodiment in FIGS. 2A and 2B, the invention utilizes a conductive layer
and wirebond cage sections to advantageously achieve an effective EMI
shield between two components inside an overmolded package and the
environment outside of the package and an effective EMI shield between
the two components inside the package. The embodiment in FIGS. 2A and 2B
also provides similar advantages as discussed above for the embodiment in
FIGS. 1A and 1B.

[0045]FIG. 3A shows a top view of an exemplary overmolded semiconductor
package in accordance to one embodiment of the present invention. Certain
details and features have been left out of FIG. 3A that are apparent to a
person of ordinary skill in the art. Overmolded semiconductor package
300, which is also referred to as an "overmolded package" in the present
application, includes component 302, bond pads 304a, 304b, 304c, 304d,
and 304e (hereinafter "bond pads 304a through 304e"), wirebond cage 306,
and conductive layer 308. Wirebond cage 304 includes wirebonds 310a,
310b, 310c, 310d, and 310e (hereinafter "wirebonds 310a through 310e").
It is noted that only bond pads 304a through 304e and wirebonds 310a
through 310e are discussed in detail herein to preserve brevity.

[0046] As shown in FIG. 3A, component 302 is situated on a substrate (not
shown in FIG. 3A). Component 302 can be an active device, such as a
semiconductor die with RF circuitry. In one embodiment, component 302 can
be a passive device, such as an inductor. Also shown in FIG. 3A, bond
pads 304a through 304e are situated on and along the perimeter of the
substrate (not shown in FIG. 3A). Bond pads 304a through 304e can
comprise a metal such as copper or aluminum and can be formed, for
example, by depositing and patterning a layer of metal, such as copper or
aluminum, and plating the layer of metal with gold. Bond pads 304a
through 304e can be connected to a reference potential (not shown in FIG.
3A), which can be any constant DC plane that does not have an AC
component.

[0047] Further shown in FIG. 3A, wirebonds 310a through 310e are situated
on respective bond pads 304a through 304e and form wirebond cage 306,
which surrounds component 302. Wirebonds 310a through 310e can comprise
gold or other suitable metal and can be connected to respective bond pads
304a through 304e by using a bonding process, for example. Also shown in
FIG. 3A, wirebond spacing 312 refers to the distance between adjacent
wirebonds (e.g. the distance between wirebonds 310a and 310b). Wirebond
spacing 312 can range in value from microns to millimeters. In one
embodiment, wirebond spacing 312 can be approximately 2.5 mm. The value
of wirebond spacing 312 can be selected to provide EMI shielding for a
particular frequency or range of frequencies.

[0048] Further shown in FIG. 3A, conductive layer 308 is situated on
overmold (not shown in FIG. 3A). Conductive layer 308 is also situated
over component 302, bond pads 304a through 304e, wirebonds 310a through
310e, and the substrate (not shown in FIG. 3A). Conductive layer 308 can
comprise a conductive coating, such as a conductive ink, which can
include copper, silver, or other conductive metals. In another
embodiment, conductive layer 308 can comprise a layer of copper,
aluminum, or other suitable metal. Conductive layer 308 is connected to
an end of each of the wirebonds (e.g. wirebonds 310a through 310e) in
wirebond cage 306.

[0049] Referring now to FIG. 3B, a cross-sectional view is shown of
overmolded semiconductor package 300 in FIG. 3A along line 3B-3B in FIG.
3A. In particular, component 302, bond pads 304a and 304b, wirebond cage
306, conductive layer 308, wirebonds 310a and 310b, and wirebond spacing
312 correspond to the same elements in FIG. 3A and FIG. 3B. As shown in
FIG. 3B, component 302 and bond pads 304a and 304b are situated on
substrate 314, which can comprise a ceramic material, a laminate
material, or other suitable type of material. Although not shown in FIG.
3B, substrate 314 can include a patterned metal layer on top and bottom
substrate surfaces and vias, for example.

[0050] Also shown in FIG. 3B, overmold 316 is situated over component 302,
bond pads 304a and 304b, and substrate 314 and encapsulates wirebond cage
306, which includes wirebonds 310a and 310b. Overmold 316 is
substantially similar in composition and formation as overmold 116 in
FIG. 1B. Further shown in FIG. 3B, conductive layer 308 is situated on
top surface 318 of overmold 316 and situated over component 302, bond
pads 304a and 304b and substrate 314. Conductive layer 308 is also
situated over and in contact with wirebonds 310a and 310b of wirebond
cage 306. Conductive layer 308 has thickness 320 and height 322, which
are substantially similar to thickness 124 and height 126 in FIG. 1B,
respectively.

[0051] Further shown in FIG. 3B, wirebonds 310a and 310b of wirebond cage
306 are situated between respective bond pads 304a and 304b and
conductive layer 308 and also situated in (i.e. encapsulated by) overmold
316. In particular, one end of each of wirebonds 310a and 310b is bonded
to respective bond pads 304a and 304b and the other end of each of
wirebonds 310a and 310b is in contact with conductive layer 308.

[0052] In overmolded semiconductor package 300, conductive layer 308 and
wirebond cage 306, which are electrically connected together, form an EMI
shield for component 302. The EMI shield can be formed during formation
of overmolded semiconductor package 300 by bonding one end of each of the
wirebonds (e.g. wirebond 310a) that form wirebond cage 306 to a bond pad
(e.g. bond pad 304a) by using a suitable bonding process as is know in
the art. Overmold 316 can then be formed by utilizing a mold compound,
such as epoxy, in a molding process as known in the art to cover
component 302, the bond pads (e.g. bond pads 304a and 304b), and the top
surface of substrate 314 and to encapsulate the wirebonds (e.g. wirebonds
310a and 310b) that form wirebond cage 306.

[0053] Overmold 316 is desirably formed such that the unattached ends of
the wirebonds (e.g. wirebonds 310a and 310b) in wirebond cage 306 are
exposed above top surface 318 of overmold 316. However, if overmold 316
inadvertently covers the unattached ends of the wirebonds in wirebond
cage 306, the unattached wirebond ends can be exposed by utilizing a
laser abrasion process, a mechanical milling process, a diamond polish
process, or other suitable process to remove the covering portion of
overmold 316. Conductive layer 308 can then be formed by utilizing a
screen printing process, spraying process, electroplating process, or
thermal spray deposition process to apply a layer of conductive ink on
top surface 318 of overmold 316 and on the exposed ends of the wirebonds
in wirebond cage 306. In an embodiment in which conductive layer 308
comprises a layer of metal, the layer of metal can be deposited on top
surface 318 of overmold 316 and on the exposed wirebond ends by utilizing
a CVD process or other suitable deposition processes.

[0054] In the embodiment of the invention in FIGS. 3A and 3B, the
invention's overmolded package includes conductive layer 308, which
provides EMI shielding over component 302, and wirebond cage 306, which
provides EMI shielding around component 302. Thus, in the embodiment in
FIGS. 3A and 3B, the invention utilizes a conductive layer and a wirebond
cage to achieve an effective EMI shield between a component inside an
overmolded package and the environment outside of the package. The
embodiment in FIGS. 3A and 3B also provides similar advantages as
discussed above for the embodiment in FIGS. 1A and 1B.

[0055]FIG. 4A shows a top view of an exemplary overmolded semiconductor
package in accordance to one embodiment of the present invention. Certain
details and features have been left out of FIG. 4A that are apparent to a
person of ordinary skill in the art. Overmolded semiconductor package
400, which is also referred to as an "overmolded package" in the present
application, includes components 402 and 403, bond pads 404a, 404b, 405a,
and 405b, wirebond cage 406, and conductive layer 408. Wirebond cage 406
includes wirebond cage section 407, which includes wirebonds 410a and
410b, and wirebond cage section 409, which includes wirebonds 415a and
415b. It is noted that only bond pads 404a, 404b, 405a, and 405b and
wirebonds 410a, 410b, 415a, and 415b are discussed in detail herein to
preserve brevity.

[0056] As shown in FIG. 4A, components 402 and 403 are situated on a
substrate (not shown in FIG. 4A). In the embodiment in FIG. 4A,
components 402 and 403 can each be an active device, such as a
semiconductor die, which can include RF circuitry, for example. In one
embodiment, component 402 can be a passive device, such as an inductor,
and component 403 can be an active device, such as a semiconductor die.
In another embodiment, components 402 and 403 can each be a passive
device. Also shown in FIG. 4A, bond pads 404a, 404b, 405a, and 405b are
situated on the substrate (not shown in FIG. 4A) and are substantially
similar in composition and formation to bond pads 304a through 3043 in
FIG. 3A. Bond pads 404a, 404b, 405a, and 405b can be connected to a
reference potential (not shown in FIG. 4A), which can be any constant DC
plane that does not have an AC component.

[0057] Further shown in FIG. 4A, respective ends of wirebonds 410a and
410b are situated on bond pads 404a and 404b and respective ends of
wirebonds 415a and 415b are situated on bond pads 405a and 405b.
Wirebonds 410a, 410b, 415a, and 415b are substantially similar in
composition and formation to wirebonds 310a through 310e in FIG. 3A.
Wirebonds 410a and 410b form a portion of wirebond cage section 407,
which extends along the perimeter of the substrate (not shown in FIG.
4A), and wirebonds 415a and 415b form a portion of wirebond cage section
409, which is situated between components 402 and 403.

[0058] Also shown in FIG. 4A, in wirebond cage section 407, adjacent
wirebonds (e.g. wirebonds 410a and 410b) are separated by wirebond
spacing 412. In wirebond cage section 409, adjacent wirebonds (e.g.
wirebonds 415a and 415b) are separated by wirebond spacing 413. In the
embodiment in FIG. 4A, wirebond spacing 412 can be different than
wirebond spacing 413. In one embodiment, wirebond spacing 412 can be
substantially equal to wirebond spacing 413. Wirebond spacing 412 and
wirebond spacing 413 can range in value from microns to millimeters, for
example. The value of each of wirebond spacings 412 and 413 can be
selected to provide EMI shielding for a particular frequency or range of
frequencies.

[0059] Also shown in FIG. 4A, conductive layer 408 is situated on an
overmold (not shown in FIG. 4A) and also situated over components 402 and
403, bond pads 404a, 404b, 405a, and 405b, wirebonds 410a, 410b, 415a,
and 415b, and the substrate (not shown in FIG. 4A). Conductive layer 408
is substantially similar in composition and formation to conductive layer
308 in FIGS. 3A and 3B. In the embodiment in FIG. 4A, conductive layer
408 can comprise a conductive coating, such as a conductive ink. In
another embodiment, conductive layer 408 can comprise a layer of copper,
aluminum, or other suitable metal. Conductive layer 408 is connected to
an end of each of the wirebonds (e.g. wirebonds 410a and 410b) in
wirebond cage section 407 and connected to an end of each of the
wirebonds (e.g. wirebonds 415a and 415b) in wirebond cage section 409.
Conductive layer 408 and wirebonds 410a and 410b will be further
discussed below in relation to FIG. 4B.

[0060] Referring now to FIG. 4B, a cross-sectional view is shown of
overmolded semiconductor package 400 in FIG. 4A along line 4B-4B in FIG.
4A. In particular, components 402 and 403, bond pads 404a and 404b,
wirebond cage 406, wirebond cage section 407, conductive layer 408,
wirebonds 410a and 410b, and wirebond spacing 412 correspond to the same
elements in FIG. 4A and FIG. 4B. As shown in FIG. 4B, components 402 and
403 and bond pads 404a and 404b are situated on substrate 414, which is
substantially similar in composition to substrate 314 in FIGS. 3A and 3B.
Also shown in FIG. 4B, wirebonds 410a and 410b are situated between
respective bond pads 404a and 404b and conductive layer 408.

[0061] Further shown in FIG. 4B, overmold 416 is situated over components
402 and 403, bond pads 404a and 404b, and substrate 414 and encapsulates
wirebond cage 406, which includes wirebonds 410a and 410b. Overmold 416
is substantially similar in composition and formation to overmold 316 in
FIG. 3B. Also shown in FIG. 4B, conductive layer 408 is situated on top
surface 418 of overmold 416 and situated over components 402 and 403,
bond pads 404a and 404b and substrate 414. Conductive layer 408 is also
situated over and in contact with wirebonds 410a and 410b and is
substantially similar in composition, thickness, and formation to
conductive layer 308 in FIGS. 3A and 3B.

[0062] In overmolded semiconductor package 400, conductive layer 408 and
wirebond cage 406, which are electrically connected together, form an EMI
shield for components 402 and 403. In the embodiment in FIGS. 4A and 4B,
the EMI shield, which includes conductive layer 408 and wirebond cage
406, can be formed in a similar manner as the EMI shield in the
embodiment in FIGS. 3A and 3B.

[0063] In the embodiment in FIGS. 4A and 4B, the invention's overmolded
package includes conductive layer 408, which provides EMI shielding over
components 402 and 403, wirebond cage section 407, which provides EMI
shielding around components 402 and 403, and wirebond cage section 409,
which provides EMI shielding between components 402 and 403. Thus, in the
embodiment in FIGS. 4A and 4B, the invention utilizes a conductive layer
and wirebond cage sections to advantageously achieve an effective EMI
shield between two components inside an overmolded package and the
environment outside of the package and an effective EMI shield between
the two components inside the package. The embodiment in FIGS. 4A and 4B
also provides similar advantages as discussed above for the embodiment in
FIGS. 1A and 1B.

[0064]FIG. 5 shows a flowchart illustrating an exemplary method according
to one embodiment of the present invention. Certain details and features
have been left out of flowchart 500 that are apparent to a person of
ordinary skill in the art. For example, a step may consist of one or more
substeps or may involve specialized equipment or materials, as known in
the art. At step 502, bond pads are formed on a substrate that includes
one or more components and wirebonds are attached to the bond pads to
form a wirebond cage. For example, bonds pads 104a through 104d in FIG.
1B can be formed on substrate 114, which includes component 102, by
depositing and patterning a layer of copper, aluminum, or other suitable
metal. For example, wirebonds 110a and 110b can be attached to respective
bond pads 104a and 104b and bond pads 104c and 104d by using a suitable
bonding process to form wirebond cage 106.

[0065] At step 504, an overmold is formed over one or more components, the
wirebond cage, the bond pads, and the substrate. For example, overmold
116 in FIG. 1B, which can comprise an epoxy molding compound, can be
formed over component 102, wirebond cage 106, which includes wirebonds
110a and 110b, bond pads 104a through 104d, and substrate 114 in a
molding process in a manner known in the art. At step 506, a conductive
layer is formed on a top surface of the overmold such that the conductive
layer is in contact with the wirebond cage. For example, overmold 116 can
be formed such that middle portions 111 and 113 of respective wirebonds
110a and 110b are exposed. Conductive layer 108 in FIG. 1B can then be
formed by applying a conductive ink over exposed middle portions 111 and
113 of respective wirebonds 110a and 110b and on top surface 118 of
overmold 116. The conductive ink can be applied by utilizing a spraying
process, electroplating process, thermal spray deposition process, or
other suitable process, for example.

[0066] As a result of the process in flowchart 500, an EMI shield, which
includes the wirebond cage and the conductive layer, is formed in an
overmolded package. For example, an EMI shield, which includes wirebond
cage 106 and conductive layer 108, which are electrically connected
together, is formed in overmolded semiconductor package 100 in FIGS. 1 A
and 1B.

[0067] Thus, as discussed above, in the embodiments in FIGS. 1A, 1B, 2A,
2B, 3A, 3B, 4A, and 4B, the invention utilizes a conductive layer and a
wirebond cage to advantageously achieve an effective EMI shield between
one or more components inside an overmolded package and the environment
outside of the package. Additionally, in the embodiments in FIGS. 2A, 2B,
4A, and 4B, the invention utilizes a wirebond cage section to achieve an
effective EMI shield between two components inside the package.
Furthermore, in the embodiments in FIGS. 1A, 1B, 2A, 2B, 3A, 3B, 4A, and
4B, the invention advantageously achieves an effective EMI shield for an
overmolded package that has a flexible design, is cost effective, and
does not substantially increase the size of the overmolded package.

[0068] From the above description of the invention it is manifest that
various techniques can be used for implementing the concepts of the
present invention without departing from its scope. Moreover, while the
invention has been described with specific reference to certain
embodiments, a person of ordinary skill in the art would appreciate that
changes can be made in form and detail without departing from the spirit
and the scope of the invention. Thus, the described embodiments are to be
considered in all respects as illustrative and not restrictive. It should
also be understood that the invention is not limited to the particular
embodiments described herein but is capable of many rearrangements,
modifications, and substitutions without departing from the scope of the
invention.

[0069] Thus, an overmolded semiconductor package with wirebond cage for
EMI shielding has been described.