Abstract

We investigate the optical properties of InAsquantum dots(QDs) capped with a thin AlxGa1−xAsSb layer. As evidenced from power-dependent and time-resolved photoluminescence(PL)measurements, the GaAsSb-capped QDs with type-II band alignment can be changed to type-I by adding Al into the GaAsSb capping layer. The evolution of band alignment with the Al content in the AlGaAsSb capping layer has also been confirmed by theoretical calculations based on 8-band model. The PLthermal stability and the room temperature PL efficiency are also improved by AlGaAsSb capping. We demonstrate that using the quaternary AlGaAsSb can take the advantages of GaAsSb capping layer on the InAsQDs while retaining a type-I band alignment for applications in long-wavelength light emitters.