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Published on

15 Oct 2014

Abstract

As the size of semiconductor devices have been shrinking to the nano-scale, great interest has arisen among scientists and engineers. Even though the full quantum simulation of nanowire structures is still computationally very expensive, OMEN Nanowire, which is powered by OMEN, makes possible the simulation of nanowire structures at the atomistic level using reasonable computational resources.

OMEN Nanowire uses OMEN under the hood to calculate the bandstructure and transport characteristics. The bandstructure is calculated in the semi-empirical tight-binding model and the transport characteristics is calculated in the wavefunction approach. The scattering boundary approach is used for efficient calculation of boundary conditions for integration of tight-binding model into transport code. OMEN is also a fully parallelized using message passing interface(MPI) for wave vectors in the bandstructure and energy grids in the transport. Great flexibility in OMEN Nanowire for device structure and simulation options allows users to simulate a circular or rectangular nanowire with or without strain effect. Advanced 1D, 2D or 3D output plots make it possible for users to pioneer the nanowire devices more precisely.

V 1.0.2 * Automatic adjustment of calculated energy range for current transport calculation to cover the whole range of current flowing * Updated description of input field in rappture interface * [http://nanohub.org/resources/6318/ First time user guide]

V 1.0.1 * The error in postprocessing of the density of states is fixed * 3D carrier density log-plot improved(for more meaningful plot the minimum of plotted carrier density is limited to 1e-14) * Channel doping included * Number of CPU's will be limited to 256 in the Steele cluster. If number of CPUs to fullfill the simulation is lager than 256, then users will be asked to reduce the size of structure or the number of bias points. * The cross section of nanowire is limited to 3 nm in width and 3 nm in height of square nanowire (for circular nanowire the diameter will be limited 3.5 nm). * The length of nanowire is limited to 60 nm. * Figures to help users understand strain are included in the strain section. * Errors in postprocessing of the data for multiple bias points for Vds and Vgs fixed. * Improved simulation time estimation for small and large nanowires

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