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Abstract

The successful application of copper electrodeposition in the synthesis of low resistivity interconnect metallization is due to the ability to achieve void and seam-free filling of submicrometer features. This is accomplished through the superconformal bottom-to-top filling process called "superfill" caused by the impact of area change on local coverage of a rate-enhancing heterogeneous catalyst. 1-4 The success of the superconformal portion of the feature filling process makes fabrication of copper seed layers the bottleneck for further increases of aspect ratio and decrease of feature size. Usually, the copper seed layers are deposited on the diffusion barriers, generally TiN or Ta, that prevent reactions between the conductor and the surrounding dielectric. In the optimized conventional process, the surface oxide on the copper seed is removed during immersion into the electrolyte and there is an insignificant barrier to nucleation during subsequent copper electrodeposition. The copper seed layer also improves wafer length scale current distribution during plating.
Sputter deposition of copper seed layers is widespread in the current implementation of damascene processing. However, it provides poor step coverage in high-aspect-ratio features, as is typical of line-of-sight, physical vapor deposition processes. For this reason other approaches have been tried for growing copper seed layers, including chemical vapor, 5 ionized physical vapor, 6 and electroless78 deposition as well as combinations of the above.9 Seeds fabricated by these processes have their own drawbacks (or limitations). These include surface roughness and selectivity for electroless processes and poor adhesion for chemical vapor deposition processes. Significant effort is being expended on barrier modification to promote adhesion and wettabilityl as well as the introduction of additional processes for seed layer repair." Furthermore, surface control issues do not end with deposition of the copper seed; degradation due to oxidation sharply limits shelf lives and prompts additional studies to understand seed aging induced defects 12 and oxide removal.

Country

United States

Language

English (United States)

This text was extracted from a PDF file.

At least one non-text object (such as an image or picture) has been suppressed.

This is the abbreviated version, containing approximately
21% of the total text.

Manuscript submitted April 23, 2003; revised manuscript received June 5, 2003. Available electronically August 4, 2003.

The successful application of copper electrodeposition in the
synthesis of low resistivity interconnect metallization is due to the
ability to achieve void and seam-free filling of submicrometer fea-
tures. This is accomplished through the superconformal bottom-to-
top filling process called ''superfill'' caused by the impact of area
change on local coverage of a rate-enhancing heterogeneous
catalyst.1-4 The success of the superconformal portion of the feature
filling process makes fabrication of copper seed layers the bottle-
neck for further increases of aspect ratio and decrease of feature
size. Usually, the copper seed layers are deposited on the diffusion
barriers, generally TiN or Ta, that prevent reactions between the
conductor and the surrounding dielectric. In the optimized conven-
tional process, the surface oxide on the copper seed is removed
during immersion into the electrolyte and there is an insignificant
barrier to nucleation during subsequent copper electrodeposition.
The copper seed layer also improves wafer length scale current dis-
tribution during plating.

Sputter deposition of copper seed layers is widespread in the
current implementation of damascene processing. However, it pro-
vides poor step coverage in high-aspect-ratio features, as is typical
of line-of-sight, physical vapor deposition processes. For this reason
other approaches have been tried for growing copper seed layers,
including chemical vapor,5 ionized physical vapor,6 and
electroless7,8 deposition as well as combinations of the above.9
Seeds fabricated by these processes have their own drawbacks ôr
limitations!. These include surface roughness and selectivity for
electroless processes and poor adhesion for chemical vapor deposi-
tion processes. Significant effort is being expended on barrier modi-
fication to promote adhesion and wettability10 as w...