Abstract

Orthorhombic epitaxialthin-filmphosphors were grown on (100) and yttria-stabilized-zirconia (YSZ) single crystal substrates with epitaxial relationships of (100) and respectively. As-deposited films exhibit a broadband photoluminescence (PL) emission, peaking at about 477–481 nm with a maximum cathodoluminescence(CL) intensity at about 465 nm. Enhanced PL intensity was observed for the films deposited on (100) YSZ and substrates as compared to deposits on -plane sapphire substrates, correlating with improved intragranular crystallinity and reducing defects via epitaxy. Postannealing in air significantly enhanced both of the PL and CL intensities. Luminous efficiency of 0.14 lm/W at 1 kV and 22 was observed for a 2-μm-thick filmannealed at 1000 °C in air.