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Dr. Russell D. Dupuis is the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance Eminent Scholar in the School of Electrical and Computer Engineering at Georgia Tech with a joint appointment in the School of Materials Science and Engineering.

Dr. Dupuis received his BSEE with highest honors-bronze tablet (1970), his MSEE (1971) and his Ph.D . EE (1973) from the University of Illinois at Urbana-Champaign. In September 1989 he joined the University of Texas at Austin where he established the Advanced Materials and Devices Group to study novel MOCVD processes and to grow device-quality heterostructure devices and quantum wells using MOCVD.

His most recent work involves the MOCVD growth of heteroepitaxial InAlGaN on sapphire substrates for lasers, LED's, photodetectors, and high-power transistors; the growth of InAlGaAsP-InP lasers; the growth of InGaAs-InP vertical-cavity surface-emitting lasers; and InGaAs -InP heterojunction bipolar transistors. In addition, he is exploring the III-V "native oxide" materials. His technical specialties include semiconductor materials and devices, epitaxial growth by metalorganic chemical vapor deposition, and heterojunction structures in III-V compound semiconductors.

Dr. Dupuis is a member of the National Academy of Engineering, the nation's highest honor for engineering professionals.