Resistivity measurements on an amorphous Mn thin film have been performed over the temperature range from 1.5 to 300 K. The films were prepared by thermal evaporation on glass substrates held at liquid-nitrogen temperature in an ambient pressure of 2 x 10-5 Torr. The amorphous nature of the film has been verified by high-voltage electron mi-
croscopy. The resistivities are large, typically of the order of 4.00 µΩm or higher with small high-temperature slopes which are negative. At low temperatures (T < 10 K) the resistivity obeys a T2 law. These results can be understood in terms of a model based on temperature dependent structure factor as suggested by Nagel.