In the present study, B-doped Q-carbon thin films are formed on sapphire substrates by employing pulsed laser annealing using a nanosecond excimer ArF laser. This process involves the rapid quenching of highly undercooled melt of homogenously mixed B and C. As a result of rapid melting and quenching, we can achieve 17.0±1.0 or higher atomic % of B in the electrically active sites of Q-carbon which leads to the formation of shallow electronic states near the valence band maximum. B-doped Q-carbon shows type II superconductivity with a transition temperature of 36.0±0.5 K and an upper critical field of 5.4 T at 0 K. It has also been shown that in B-doped Q-carbon, the upper critical magnetic field (Hc2(T)) follows Hc2(0) [1-(T/Tc)2.11] temperature dependence and is consistent with the BCS formalism. This discovery of high-temperature superconductivity in B-doped Q-carbon shows that non-equilibrium synthesis technique can be used to fabricate novel materials.