Abstract

A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors(TFTs) was developed. The IGZO TFT had a field-effect mobility (μFET) of 0.07 cm2/Vs and an on-current (Ion) value of about 2.68 μA. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in μFET (0.02 cm2/Vs) and Ion (0.247 μA) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.

Received 16 December 2011Accepted 18 February 2012Published online 07 March 2012

Acknowledgments:

This work was supported by Hi Seoul Science (Humanities) Fellowship funded by Seoul Scholarship Foundation and the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) [No. 2011-0028819].