GaN Industrial Devices Market is expected to reach USD 1,315.0 million in 2021 & By volume expected to reach 3,427.2 million units in 2021: Transparency Market Research

Published 9:10 AM ET Mon, 27 July 2015
Globe Newswire

Albany, NY, July 27, 2015 (GLOBE NEWSWIRE) -- According to a new market report published by Transparency Market Research "GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021" the market was valued at USD 481.8 million in 2014, which is expected to reach USD 1,315.0 million by 2021, growing at a CAGR of 15.1% from 2015 to 2021. By volume, global GaN Industrial Devices market is expected to grow at a CAGR of 17.5% during the forecast period from 2015 to 2021 to reach a market size of 3,427.2 million units by 2021. In 2014, volume of the market was 1,099.6 million units.

Gallium nitride (GaN), a wide band gap semiconductor material, is a new technology and offer enhanced performance characteristics compared to other semiconductor devices such as Silicon (Si) and Gallium arsenide (GaAs). Due to high temperature resistivity, low power consumption, high breakdown voltage, better thermal stability and high electron mobility among others, GaN industrial devices are widely acknowledged by different industrial sectors as a green technology. GaN is expected to be the next generation power semiconductor and thus various countries are continuously indulged in widespread applications of GaN industrial devices. These devices are significantly used in automotive, defense, information and communication technology, military, aerospace and power distribution systems among others.

Moreover, GaN is broadly implemented in radio frequency devices, light-emitting diodes (LEDs) and power electronics, due to its ability to operate at high frequency and high temperature. Therefore, increasing applications of GaN based devices is primarily fuelling the expansion of the market. In addition, rapid advancement in GaN technology along with large scale of production is further driving the growth of the market for GaN industrial devices. Overall, these factors are analyzed to generate a positive impact on the growth of GaN industrial devices market during the forecast period from 2015 to 2021.

By application, the global GaN HEMT market is divided into seven segments, namely WiMAX/LTE, wireless phone infrastructure: base stations (BTS), CATV, V-SAT, satellite, defense and others. By revenue, wireless phone infrastructure: base stations (BTS) segment was the largest contributor to the market in 2014, accounting for a market share of 26.0%. Rising adoption of GaN HEMT technology is leading to an increase in the number of base transceiver station installations.

The global GaN industrial devices market by types is divided into two segments: power devices and opto electronics. By revenue, opto electronics was the largest contributor to the market in 2014, accounting for 78.0% of the overall market. The wide implementation of these devices in light emitting diodes and laser diodes is majorly driving the market.

By application, the global GaN industrial devices market can be classified into three sub-segments: radio frequency (RF), light emitting diodes (LEDs) and power devices. LED segment was the largest contributor to the market, both in terms of value and volume in 2014, accounting for a market share of 68.0% and 82.5% respectively This is due to the extensive usage of GaN based LED devices in traffic signal lamps, vehicle lamps and liquid crystal displays among others. Moreover, there have been two major developments of GaN based LED technology, such as development of GaN based devices on foreign substrates and invention of bulk GaN substrate based LEDs.

The global GaN industrial devices market has been bifurcated into four broad regions: North America, Europe, Asia Pacific and RoW. In terms of value, North America acquired the largest share in 2014, accounting for 31.1% of the global market. This is mainly due to high penetration of GaN based transistors in military and defense applications. The penetration of GaN industrial devices is fueled by increasing demand for LEDs in computers, laptops, mobile tablets, gaming devices and televisions. Europe held the second largest market share and accounted for 28.9% in the global market in 2014 in terms of revenue.

The report provides detailed analysis of the global GaN industrial devices market along with the estimates, in terms of revenue (USD Million) and volume (Million Units) for the forecast period from 2015 to 2021. Moreover, the GaN industrial devices market has been segmented on the basis of types and applications. Furthermore, GaN HEMT market has been bifurcated on the basis of applications. Cross sectional analysis of the global GaN industrial devices market into four major geographical segments have also been covered under the scope of the report.

The global GaN industrial devices market has been segmented into:

GaN industrial devices market, by Types:

Power devices

Schottky diode

Metal oxide semiconductor field effect transistor (MOSFETs)

High electron mobility transistors (HEMTs)

Others (rectifiers, other advanced transistor types)

Opto electronics

Light-emitting diodes

Laser diodes

GaN industrial devices market, by Application

Radio frequency (RF)

Light-emitting diodes (LED)

Power device

GaN industrial devices market, by geography: The market is broadly segmented on the basis of geography into:

Transparency Market Research (TMR) is a U.S. based provider of syndicated research, customized research, and consulting services. TMR's global and regional market intelligence coverage includes industries such as pharmaceutical, chemicals and materials, technology and media, food and beverages, and consumer goods, among others. Each TMR research report provides clients with a 360-degree view of the market with statistical forecasts, competitive landscape, detailed segmentation, key trends, and strategic recommendations.