Abstract

The effects of magnetoelastically induced perpendicular anisotropy,, on the perpendicular exchange bias (PEB) characteristics in thin films have been explored by inserting ultrathin CoFe magnetic layers with different thicknesses, compositions, and Ar sputtering gas pressures at the interface between and FeMn. It was clearly found that the with CoFe sputtered at a low showed great enhancement in PEB due to the development of intrinsic compressive stress in the CoFe resulting in improving and interfacial exchange coupling. Additionally, this effect was more significant for insertion than due to its larger magnetostriction.