Abstract

A simple method of preparing plasma‐grown anodic oxide on GaAs with improved physical and electrical properties is described. A GaAssurface was sputtered by positive oxygen ions prior to the plasma anodization, resulting in a Ga‐rich oxide layer on the surface. The oxide formed through this Ga‐rich layer had a low pin hole density and exhibited high breakdown voltages (3×106 V/cm) and less hysteresis in MOS‐device C‐V characteristics.