Figure 7.

Evolution of the Raman spectra of SiNxwith the refractive index and the annealing temperature. Effect of the annealing temperature on the Raman spectra of SiNx thin layers deposited on fused silica with a refractive index below 2.5 (a) and above (b). It independently concerns films produced by the N2-reactive (full symbols) and the co-sputtering (empty symbols) methods. The excitation
power density was 0.46 MW/cm2.