Authors:

Yaping Wang(Nagoya University)

Daichi Takeuchi(Nagoya University)

Katsunori Makihara(Nagoya University)

Akio Ohta(Nagoya University)

Seiichi Miyazaki(Nagoya University)

We have demonstrated the formation of high-density Ta nanodots (NDs) on
thermally-grown SiO$_{2}$ by exposing electron beam evaporated
a-Ge/Ta bi-layer stack to remote H$_{2}$ plasma without any
external heating. After the remote H$_{2}$ plasma exposure, the
formation of NDs with an areal density of 9.7 $\times$ 10$^{11}$
cm$^{-2}$ and an average height of $\sim$ 2.1 nm was
confirmed. The electrical separation among the Ta-NDs was observed from
changes in surface potential due to charging to the dots. XPS analyses
indicate etching of a-Ge layer by the remote H$_{2}$ plasma
exposure, which was accompanied with agglomeration of Ta atoms on the
SiO$_{2}$ surface caused by local heating associated with the
recombination of atomic hydrogen on clean Ta-layer surface.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.QR2.3