Abstract

The in-plane dispersion relarions of the valence sub- bands of GaAs - Ga0.7Al0.3As quantum well are calcu- lated within the envelope function approximation. The anisotropy related with the difference between the Lut-tinger parameters ?2 and ?3 is taken into account con- sistently. The anisotropy proved to be considerable for the ground valence subbands of heavy and light holes and the great values ok k. The cross sections of the constant-energy surfaces of the valence subbans by the kxky plane are built. The envelope wave functions of the valence subbands as the mixture of the hole states dis-tinguished in mJ at k=0 are found. The change of the percental contribution of the hole states different in mJ to the resultant state with k varying is investigated.

Abstract

The in-plane dispersion relarions of the valence sub- bands of GaAs - Ga0.7Al0.3As quantum well are calcu- lated within the envelope function approximation. The anisotropy related with the difference between the Lut-tinger parameters ?2 and ?3 is taken into account con- sistently. The anisotropy proved to be considerable for the ground valence subbands of heavy and light holes and the great values ok k. The cross sections of the constant-energy surfaces of the valence subbans by the kxky plane are built. The envelope wave functions of the valence subbands as the mixture of the hole states dis-tinguished in mJ at k=0 are found. The change of the percental contribution of the hole states different in mJ to the resultant state with k varying is investigated.