In this paper, the vacuum layer was formed by He ions injection and heating treatment under SiO 2 layer. Ca modified (Pb,La)TiO 3 (PLCT) films were deposited on Pt coated silicon substrates using metal-organic decomposition (MOD) process. The preferred orientations polycrystalline films were formed. XRD, HRTEM, RBS, had characterized the microstructure. The electric properties were measured by HP4284 and ASR. It was found that the micro-structure had no effect under the cavum layer. The PLCT films exhibit lower dielectric constant and dielectric loss compared with the PLCT films which have not the cavum layer at room temperature. The cavum layer can act as heating barrier and the lower dielectric constant and dielectric loss can improve the quality factor of infrared detector device.

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