Abstract

Semiconductorheterostructures and their implementation into electronic and photonicdevices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructuredevices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of was observed at low temperatures.