Wafer Management

Films

Dielectric

Film type

CVD Dielectric

Technology

Plasma-Enhanced Chemical Vapor Deposition (PECVD)

Tool type

Vector Extreme

Solutions

Transistor, Interconnect, Advanced Memory

Dielectric film deposition processes are used to form some of the most difficult-to-produce insulating features
in a semiconductor device, including those used in the latest transistors and 3D structures.
For some applications, these films need to conform tightly around intricate structures. Other applications
require exceptionally smooth films since slight imperfections are multiplied greatly in subsequent layers.

CVD Capabilities

USG Oxide (SiH4)

2,000 +/-5% to 50,000 +/-5% Å

TEOS Oxide

500 +/-5% to 60,000 +/-5% Å

SiN

500 +/-5% to 20,000 +/-5% Å

SiC (Nitrogen Doped)

100 +/-5% to 2,000 +/-5% Å

SiC (Oxygen Doped)

100 +/-5% to 2,000 +/-5% Å

NF-ARL (SiON)

300 +/-5% to 1,000 +/-5% Å

Passivation (SiON)

1,500 +/-5% to 10,000 +/-5% Å

Amorphous Carbon (available Jun 2016)

1,000 +/-5% to 10,000 +/-5% Å

Amorphous Silicon

1,000 +/-5% to 10,000 +/-5% Å

CORAL-Carbon Doped Oxide (k=3.0)

1,000 +/-5% to 20,000 +/-5% Å

Film type

HDP

Technology

Speed NExT

Tool type

High-Density Plasma Chemical Vapor Deposition (HDP-CVD)

Solutions

Transistor, Interconnect, Advanced Memory

Dielectric “gapfill” processes deposit critical insulation layers between conductive and/or active areas by
filling openings of various aspect ratios between conducting lines and between devices. With advanced devices,
the structures being filled can be very tall and narrow. As a result, high-quality dielectric films are especially
important due to the ever increasing possibility of cross-talk and device failure.