With the introduction of our 3rd generation V-NAND flash
memory to the global market, we can now provide the best advanced memory
solutions, with even higher efficiency based on improved performance,
power utilization and manufacturing productivity, thereby accelerating
growth of the high-performance and the high-density SSD markets, said
Young-Hyun Jun, President of the Memory Business at Samsung Electronics.
By making full use of Samsung V-NANDs excellent features, we will
expand our premium-level business in the enterprise and data center
market segments, as well as in the consumer market, while continuing to
strengthen our strategic SSD focus.

Samsungs new 256Gb 3D V-NAND flash doubles the density of conventional
128Gb NAND flash chips. In addition to enabling 32 gigabytes (256
gigabits) of memory storage on a single die, the new chip will also
easily double the capacity of Samsungs existing SSD line-ups, and
provide an ideal solution for multi-terabyte SSDs.

Samsung introduced its 2nd generation V-NAND (32-layer 3-bit MLC V-NAND)
chips in August 2014, and launched its 3rd generation V-NAND (48-layer
3-bit MLC V-NAND) chips in just one year, in continuing to lead the 3D
memory era.

In the new V-NAND chip, each cell utilizes the same 3D Charge Trap Flash
(CTF) structure in which the cell arrays are stacked vertically to form
a 48-storied mass that is electrically connected through some 1.8
billion channel holes punching through the arrays thanks to a special
etching technology. In total, each chip contains over 85.3 billion
cells. They each can store 3 bits of data, resulting 256 billion bits of
data, in other words, 256Gb on a chip no larger than the tip of a finger.

A 48-layer 3-bit MLC 256Gb V-NAND flash chip delivers more than a 30
percent reduction in power compared to a 32-layer, 3-bit MLC, 128Gb
V-NAND chip, when storing the same amount of data. During production,
the new chip also achieves approximately 40 percent more productivity
over its 32-layer predecessor, bringing much enhanced cost
competitiveness to the SSD market, while mainly utilizing existing
equipment.

Samsung plans to produce 3rd generation V-NAND throughout the
remainder of 2015, to enable more accelerated adoption of terabyte-level
SSDs. While now introducing SSDs with densities of two terabytes and
above for consumers, Samsung also plans to increase its high-density SSD
sales for the enterprise and data center storage markets with
leading-edge PCIe NVMe and SAS interfaces.

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. inspires the world and shapes the future
with transformative ideas and technologies, redefining the worlds of
TVs, smartphones, wearable devices, tablets, cameras, digital
appliances, printers, medical equipment, network systems, and
semiconductor and LED solutions. We are also leading in the Internet of
Things space through, among others, our Smart Home and Digital Health
initiatives. We employ 319,000 people across 84 countries with annual
sales of US $196 billion. To discover more, please visit our official
website at
www.samsung.com
and our official blog at
global.samsungtomorrow.com.