Home » Reflectance-difference spectroscopy system for real-time measurements of crystal growth

TITLE

Reflectance-difference spectroscopy system for real-time measurements of crystal growth

AUTHOR(S)

Aspnes, D. E.; Harbison, J. P.; Studna, A. A.; Florez, L. T.

PUB. DATE

March 1988

SOURCE

Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p957

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

We describe a reflectance-difference spectroscopy system for real-time in situ optical studies of crystal growth. Either changes in surface chemistry or surface structure can be monitored depending on wavelength.

ACCESSION #

9826313

Related Articles

The effect of weak ordering on InGaPN/GaAs heterostructure grown by gas source molecular-beam epitaxy is quantitatively studied by room-temperature Raman, photoluminescence (PL), and photoreflectance spectroscopy in this work. The PL intensity decreases rapidly as the nitrogen concentration...

We report on a growth by molecular beam epitaxy of InN:In semiconductor/metal composite structures containing periodically inserted arrays of In clusters formed by intentional deposition of In metal films in a thickness range of 2â€“48 monolayers. It was found that indium insertions do not...

The properties of the wetting layer (WL) of InAs nanorings grown by droplet epitaxy have been studied. The heavy-hole (HH) and light-hole (LH) related transitions of the In(Ga)As WL were observed by reflectance difference spectroscopy. From the temperature dependent photoluminescence behavior of...

Single crystals of monoclinic BaY[sub 2]F[sub 8] and tetragonal LiYF[sub 4] codoped with the same Tm[sup 3+] and Ho[sup 3+] concentrations were successfully grown by the Czochralski method. Here we present a comparative analysis of the two hosts including spectroscopic characterization and cw...

The transmission spectra of CuGa5Te8 single crystals grown by the Bridgman method at temperatures of 10ï¿½300 K have been measured in the region of their intrinsic absorption edge. The energy-gap width of CuGa5Te8 single crystals has been determined, and its temperature dependence has been...

The conditions for equivalent positions on the ( hkl) face of growing crystal are derived using symmetry elements of the space group. It is shown by the example of the sp. gr. D that the conditions of equivalent position formation coincide with conditions of the reflection of diffracted beams by...

Spectroscopic ellipsometry (SE) has been performed to determine the optical properties of the InN epitaxial films grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. In addition to SE, cross-sectional transmission electron microscopy...