We analyze the electrical modulation of the terahertz (THz) radiation associated with the carrier heating in the graphene-phosphorene (GP) heterostuctures. The heating of the carriers leads to the transfer of a significant fraction &#13; of the light carriers in the G-layer to the P-layer with a relatively large carrier effective mass.&#13; This might result in a dramatic decrease in the conductivity of the GP-channel&#13; that could be used to modulate&#13; the incident THz radiation. We demonstrate that the depth of the THz radiation modulation can be large in relatively wide range of the modulation frequencies.