Abstract

Optically degraded regions in In1−xGaxAsyP1−y layers, grown on (001) InP substrates by liquid phase epitaxy, have been examined in detail by transmission electron microscopy. It is shown that these areas are associated with dislocation clusters or bundles which are aligned parallel to the 〈100〉 directions. We conclude that the observed features develop by nonradiative‐recombination‐enhanced glide of threading and inclusion‐generated dislocations present in the layers.