Abstract

Epitaxial films were grown on (0001) GaN-on-sapphire templates using molecular beam epitaxy. The maintained the (0001) orientation with an in-plane epitaxial relationship of (0001)‖(0001); . The was ferroelectric at room temperature with a remanent polarization of and a saturation polarization of . This heterostructure is a promising candidate for multifunctional structures that integrate ferroelectrics with GaN-based high-power and short-wavelength light-emitting devices.

Received 14 December 2005Accepted 28 February 2006Published online 27 March 2006

Acknowledgments:

This research was supported by the U.S. Office of Naval Research (Grant No. N00014-02-1-0974), the U.S. Air Force Office of Scientific Research (MURI Grant No. F49620-03-1-0330), and by the U.S. National Science Foundation through the West Virginia EPSCoR program. We are grateful to R. Tompkins, E. Schires, and J. Gu for their technical assistance.