Solution processed perovskite semiconductors have developed rapidly over the past decade to yield excellent performance in both solar cell and light emitting diode devices. Both of these device types are prepared using similar materials and architectures, raising the possibility of perovskite based light emitting solar cells. Recent reports have indicated that some low band gap perovskite solar cells are able to emit infrared light efficiently, however, intermediate band gap perovskite solar cells which emit visible light have not, to the best of our knowledge been deliberately designed or extensively characterized. In this work, we have investigated the use of different electron transport layers in order to minimize energetic barriers to electron injection and extraction in methylammonium lead bromide (MAPbBr(3)) films. We demonstrate that through appropriate band structure engineering, MAPbBr(3) can be used tomake such "peroptronic" light-emitting solar cells, which simultaneously exhibit efficient solar cell power conversion efficiencies over 1% and 0.43 lm W-1 green light emission.