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With the continuous downscaling of CMOS technologies, reliability has become one of the major bottlenecks in the evolution of next generation systems. The radiation-induced soft errors have become one of the most important and challenging failure mechanisms in the modern semi-conductor devices. The authors present an in-depth analysis of alpha-particle-induced effects in deep submicron partially depleted silicon on insulator (PD-SOI) device. Device with body contact as well as device without body contact is analysed. The process and device simulations are done with the latest models. Electrical parameter extraction under different energies of an alpha particle is carried out.