Abstract

Highly (002)-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature. The devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage. Only a low forming electric field was required to induce the resistive switching characteristics. The resistance ratios of high resistance state to low resistance state were in the range of 3–4 orders of magnitude within of test. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Poole-Frenkel emission, respectively.

Received 07 November 2007Accepted 20 December 2007Published online 16 January 2008

Acknowledgments:

The authors would like to thank the National Tsing-Hua University of Taiwan, Republic of China (under Contract No. 96N2417E1) and Industrial Technology Research Institute of Taiwan, Republic of China (under Contract No. 6301XS7K40), for providing the financial support.