I am mostly interested in the transfer curves - the
relationship of Ids, Vgs and Vds. The current crop of FET
devices is largely pentode in character, with a small linear
ohmic region and a large saturation region. I am interested
in expansion of the ohmic region, which is do-able with
power JFETs. You see devices like this in satellite and radar
applications, but even then you could not say they were
developed with audio in mind.

I am mostly interested in the transfer curves - the relationship of Ids, Vgs and Vds. The current crop of FET
devices is largely pentode in character, with a small linear
ohmic region and a large saturation region. I am interested
in expansion of the ohmic region, which is do-able with
power JFETs. You see devices like this in satellite and radar
applications, but even then you could not say they were
developed with audio in mind.

This is just what we see for the rare 2SK60 SIT transistors. Could you tell us what maximum values of Vds, Ids, Ciss, Rd, j-c thermal resistance are targeted at this part design?

I would guess the "beast with a thousand jfets" philosophy may work. Most FETs are many cells of small FETs paralelled together anyway. Just build 1000 2sk170 or 2sj74s on the same die??? Simple complementary power JFETs

__________________
"It was the perfect high end audio product: Exotic, inefficient, expensive, unavailable, and toxic." N.P.

Sometime back in the Blowtourch thread I think, Pavel M. did some simming and analysis of distortion with JFETs and it showed that short channel, equal length S and D with ideal Lamda proved the best peforming. I suppose that would apply here??? Probably to late to help NP even if I could.
Pavel's Instrument www site has the anaysis. It,s a bunch easier than the BT thread. I,m on my phone or I,ld go find it

__________________
"It was the perfect high end audio product: Exotic, inefficient, expensive, unavailable, and toxic." N.P.