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Abstract

Contamination of the crystal grown in a Czochralski process may be reduced by providing a directed flow of inert gas and a contaminant shield to protect the crystal and melt from the contaminant sources. In the drawing, crystal 10 is pulled from the melt 11 by the conventional combined linear and rotating movement. The melt 11 is confined in the crucible 12 heated by means of an annular heater 13 surrounded by insulation 14. The crucible is supported for rotation and elevation by means of pedestal 15 and shaft 16, leading out of the furnace enclosure 17. A high purity "eliminator reservoir" 18 effectively lines the crucible 12 to provide a reservoir for the melt to prevent contamination of the melt from the crucible.

Country

United States

Language

English (United States)

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Reduction of Contamination in a Czochralski Process

Contamination of the crystal grown in a Czochralski process may be reduced by
providing a directed flow of inert gas and a contaminant shield to protect the
crystal and melt from the contaminant sources. In the drawing, crystal 10 is
pulled from the melt 11 by the conventional combined linear and rotating
movement. The melt 11 is confined in the crucible 12 heated by means of an
annular heater 13 surrounded by insulation 14. The crucible is supported for
rotation and elevation by means of pedestal 15 and shaft 16, leading out of the
furnace enclosure 17. A high purity "eliminator reservoir" 18 effectively lines the
crucible 12 to provide a reservoir for the melt to prevent contamination of the melt
from the crucible. The "eliminator reservoir" 18 is further provided with a radially
extending flange 18A which overlies the heater 13 and insulation 14 and an
auxiliary shield 19 to isolate other contaminant contributors. To enhance the
protection, argon gas under pressure is introduced at the port 20 and induced to
flow in the direction of the arrows to exit at port 21 under the influence of a
reduced pressure thereat. The flow is directed by means of the double-walled
gas-flow belt structure 22 which connects with the exit port 21. Since a fresh flow
of argon is always present at the growth zone, the melt and crystal are protected
from contamination from elements in the hot zone (heater, insulation and
crucible).