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An exciting opportunity has opened for a senior
MMIC designer that is looking to develop MMIC RF
and Microwave functions on Nitronex’s unique GaN-on-Silicon
process. You’ll be designing MMICs that span from
UHF to Ka band, utilizing state-of-the-art tools
and semiconductor processes. Nitronex is a quickly
growing company that will require MMIC designers
to utilize new technologies that will enable devices
to operate to Ka band and as high as 65V. Candidates
must hold an MSEE, have 7+ years of MMIC development
experience, preferably in a compound semiconductor
(GaN or GaAs), have a solid grasp of RF fundementals,
and a desire to work in a fast paced, startup environment.
To apply, submit your resume and cover letter to:

Core Competencies:
The ideal candidate will have complete capability
in designing MMICs, bringing the following skills
to Nitronex:

• A Master’s or PhD in Electrical
Engineering, Physics, or other relevant field.
• 7+ years of MMIC development experience in GaN
or GaAs.• Extensive experience with an RF simulation
package such as MWO or ADS.• Working knowledge
of linear and non-linear FET models and their limitations.
• Working knowledge of passive element models and
their limitations.• In-depth understanding of
RF testing (s-parameters, I-V, pulsed I-V, load-pull),
calibration (SOLT, TRL, LRM, etc.), verification,
and analysis.• Hands-on approach to solving
problems including working in the lab to help debug
test issues and at times performing RF testing.
• Independent, able to execute on design level tasks
with little supervision or oversight. • Able
to communicate effectively with peers both formally
through design reviews and informally.• Desire
to work in a fast-paced start-up environment.