Abstract

The effect of the gate dielectric materials on the device performance of nanowire field effect transistors(FETs) was investigated. The usage of Al-doped layer with a large dielectric constant, whose atomic layer deposition process was optimized based on a serially connected capacitor model, enhanced the device performance with lower operation voltages compared to those of or film in an accumulated channel. The higher dielectric constant is attributed to give a lower threshold voltage and a smaller subthreshold slope, which will be useful for the low voltage operation of the nanowire FETs.

Received 27 January 2010Accepted 12 February 2010Published online 11 March 2010

Acknowledgments:

H.H.P. and P.S.K. contributed equally to this work. This work was supported by the National Research Foundation grants funded by the Ministry of Education, Science and Technology, Korea (Grant Nos. 2007-0056879, 2005-2002369, 2009-0083380, and R322009000100820).