Highlights

Sn-doped ZnO/Ag/Sn-doped ZnO (ZAZ) multilayers prepared using
sputtering process was employed in GaN-based blue light-emitting diodes(LEDs) as
transparent contact layers (TCLs). The ZAZ layer had better optical and
electrical properties without any thermal annealing. The ZAZ TCLs improved the
current spreading on p-GaN layer and increased the light output power in the
large area devices. The efficiency droop was also quite small in the case of
adopting a ZAZ TCL in GaN-based LEDs. These results are promising for the
development of a ZAZ TCL using sputtering process for GaN LED
applications.

Graphical abstract

We introduced Sn-doped ZnO/Ag/Sn-doped ZnO (ZAZ) multistructure as a new
transparent contact layer (TCL), which is fabricated by a sputtering process for
GaN blue LEDs. It has better electrical and optical properties than ITO without
thermal annealing. The new ZAZ TCL shows better device performances even in a
large area device than a conventional ITO TCL.

Keywords: GaN; Transparent contact layer; LED

Source: Sciencedirect

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