Abstract

Water uptake in porous low-k dielectrics has become a significant challenge for both back-end-of-line integration and circuit reliability. The influence of absorbed water on the mechanical properties of plasma-enhanced chemical-vapor-deposited organosilicate glasses (SiCOH) was investigated with nanoindentation. The roles of physisorbed (α-bonded) and chemisorbed (β-bonded) water were examined separately through annealing at different temperatures. Nanoindentation measurements were performed on dehydrated organosilicate glass during exposure to varying humidity conditions. The elastic modulus and hardness for as-deposited SiCOH are intimately linked to the nature and concentration of the absorbed water in the dielectric. Under mild-annealing conditions, the water-related filmmechanical property changes were shown to be reversible. The mechanical properties of UV-cured SiCOH were also shown to depend on absorbed water, but to a lesser extent because UV curing depopulates the hydrophilic chemical groups in SiCOH. High-load indentation tests showed that in-diffusion of water in the film/substrate interface can degrade the hardness of SiCOH/Si film stacks significantly, while not significantly changing the elastic modulus.

This work was supported by the Semiconductor Research Corporation under Contract No. 2012-KJ-2359, by the National Science Foundation under Grant No. CBET-1066231, and by the Applied Materials University Research Partnership Program.