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A low-energy diet (LED) is an effective approach to induce a rapid weight loss in individuals with overweight. However, reported disproportionally large losses of fat-free mass (FFM) after an LED trigger the question of adequate protein content. Additionally, not all individuals have the same degree of weight loss success. After an 8-week LED providing 5020 kJ/d for men and 4184 kJ/d for women (84/70 g protein/d) among overweight and obese adults, we aimed to investigate the relationship between protein intake relative to initial FFM and proportion of weight lost as FFM as well as the individual characteristics associated with weight loss success. We assessed all outcomes baseline and after the LED. A total of 286 participants (sixty-four men and 222 women) initiated the LED of which 82 % completed and 70 % achieved a substantial weight loss (defined as ≥8 %). Protein intake in the range 1·0–1·6 g protein/d per kg FFM at baseline for men and 1·1–2·2 g protein/d per kg FFM at baseline for women was not associated with loss of FFM (P = 0·632). Higher Three-Factor Eating Questionnaire (TFEQ) hunger at baseline and reductions in TFEQ disinhibition and hunger during the LED were associated with larger weight loss (all P ≤ 0·020); whereas lower sleep quality at baseline predicted less successful weight loss using intention to treat analysis (P = 0·021), possibly driven by those dropping out (n 81, P = 0·067 v. completers: n 198, P = 0·659). Thus, the protein intakes relative to initial FFM were sufficient for maintenance of FFM and specific eating behaviour characteristics were associated with weight loss success.

InGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a two-fold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

InGaN multi-quantum-well laser diodes have been fabricated on fully-coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown ‘wing’ regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on the low-dislocation-density wing regions showed a reduction in threshold current density from 8 kA/cm2 to 3.7 kA/cm2 compared the those on the high-dislocation ‘window’ regions. Laser diodes also showed a twofold reduction in threshold current density when comparing those on the wing regions to those fabricated on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

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