About Optics & Photonics TopicsOSA Publishing developed the Optics and Photonics Topics to help organize its diverse content more accurately by topic area. This topic browser contains over 2400 terms and is organized in a three-level hierarchy. Read more.

Topics can be refined further in the search results. The Topic facet will reveal the high-level topics associated with the articles returned in the search results.

Abstract

A large lateral photovoltaic effect (LPE) has been observed in a Cu2O/Si heterojunction structure when its surface is illuminated by a laser. Moreover, with external bias voltage, the maximal LPE sensitivity can reach up to 1114 mV/mm, which is almost 10 times larger compared with its initial non-biased value of 113 mV/mm. We ascribe this phenomenon mainly to the effect of the increased photo-generated holes caused by the bias. Giant output voltage and high sensitivity suggest the potential of Cu2O nano-films could be used in a wide variety of applications for position-sensitive photodetectors.

Figures (4)

(a) LPV measurement in the structures of Cu2O/Si with different Cu2O film thickness (58.0 nm, 63.2 nm, 66.9 nm and 74.3 nm). The bottom inset displays the schematic circuit of the VAB measurement. LPVs in (b) PP and PN mode and (c) NN and NP mode as a function of laser position in Cu2O(66.9 nm)/Si structure. The inset shows the layout of LPV measurement. A (2 mm), B (−2 mm), C (2 mm) and D (−2 mm) mark the electrodes.

The LPV (VAB) as a function of laser position in Cu2O (66.9 nm)/Si structure when a bias voltage of −3 V is applied on electrodes B and D. The inset displays the schematic setup for LPV measurement, where A (2 mm), B (−2 mm), C (2 mm), and D (−2 mm) denote the electrodes.

The experimental results of LPV (VAB) measured in structure of Cu2O(66.9 nm)/Si with a negative bias voltage of −3 V, in which the distances between AB ( = 2L) are 3.0 mm, 4.0mm, 5.0 mm and 6.0 mm, respectively. The inset shows the schematic setup for LPV measurement with a bias voltage of −3 V.