Abstract

A large signal model is proposed for GaAs epitaxial layer resistor, which can be used in resistor design, characterization and circuit simulation.The resistor I-Vbehaviorcanbeexcellently fitted by a hyperbolic tangentexpression with only two model parameters.Bytakingintoaccountthenonlinearities, frequency dispersion, and parasiticeffect,the proposed model accurately predicts DC, small signal S parameter, and powerperformancesofresistors.

Abstract

A large signal model is proposed for GaAs epitaxial layer resistor, which can be used in resistor design, characterization and circuit simulation.The resistor I-Vbehaviorcanbeexcellently fitted by a hyperbolic tangentexpression with only two model parameters.Bytakingintoaccountthenonlinearities, frequency dispersion, and parasiticeffect,the proposed model accurately predicts DC, small signal S parameter, and powerperformancesofresistors.