YOKKAICHI, Japan--(EON: Enhanced Online News)--Toshiba
Corporation (TOKYO:6502) today announced that it has started
construction of a new state-of-the-art semiconductor fabrication
facility, Fab 6, and a new R&D center, the Memory R&D Center, at
Yokkaichi Operations in Mie prefecture, Japan, the company’s main memory
production base.

“Committed to People, Committed to the Future”

Fab 6 will be dedicated to production of BiCS FLASH™, Toshiba’s
innovative 3D Flash memory1. Like Fab 5, construction will
take place in two phases, allowing the pace of investment to be
optimized against market trends, with completion of Phase 1 scheduled
for summer 2018. Toshiba will determine installed capacity and output
targets and schedules by closely monitoring the market.

Toshiba will also construct a Memory R&D Center adjacent to the new fab,
with completion targeting December 2017. The facility will advance
development of BiCS FLASH™ and new memories.

Toshiba is determined to enhance its competitiveness in the memory
business by timely expansion of BiCS FLASH™ production in line with
market trends, and to retain leadership in innovation in the memory
business.

* BiCS FLASH is a trademark of Toshiba Corporation1 A
structure that stacks Flash memory cells on a silicon substrate. It
realizes significant density improvements over planar NAND Flash memory,
where cells are formed on the substrate.

About ToshibaFounded in Tokyo
in 1875, Toshiba Corporation is a Fortune Global 500 company that
contributes to a better world and better lives with innovative
technologies in Energy, Infrastructure and Storage. Guided by the
philosophy of “Committed to People, Committed to the Future,” Toshiba
promotes operations through a global network of 551 consolidated
companies employing 188,000 people, with annual sales surpassing 5.6
trillion yen (US$50 billion; March 31, 2016).Find out more about
Toshiba at www.toshiba.co.jp/index.htm

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