GaAs High-Power Semiconductor Operates at 1.9 GHz

San Francisco, CA--June 18, 1996--A partially matchedL/S-band gallium arsenide FET microwave semiconductor has beenintroduced by Toshiba America Electronic Components Inc. (Irvine, CA) foruse at a frequency of 1.9 GHz. The L/S-band FET,designated TPM1919-40, operates at 40 watts, and is the firstL/S-band GaAs FET to achieve such a high output of power. Currently, achieving 40W output power requires the use ofmonolithic microwave ICs.

Toshiba's FET is meant for use in base stations used in cellulartelephone transmission. Its high output power allows basestations to boost signal strength using fewer components,resulting in an overall lower system cost.

Toshiba has also expanded its MMIC line with the S9751B, which isalso intended for the same market. The new MMIC device is alsogeared towards the 1.9GHz frequency range and targeted towardshand-held cellular phone applications.