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Artifact Details

Title

Tucker patent notebook (#893)

Catalog Number

102722915

Type

Text

Date

1969-01-31-1971-07-22

Author

Tucker, Ross N.

Biographical Notes

Ross N. Tucker joined Fairchild circa 1962 where he led a technical group skilled in the analysis and solution of materials-related problems encountered in semiconductor processing. His work addressed the development of high-quality epitaxial deposition of thin layers of silicon, and the understanding of the properties of thin films of polycrystalline silicon. A 1966 R & D organization chart shows him as a Member of Technical Staff in the Materials and Processes Dept. He joined Intel in 1972 where he continued to research the relationship between crystalline defects and semiconductor device performance. He died in 1974. The Ross N. Tucker Award has been established to recognize U.C. Berkeley students whose work advances the technologies and uses of semiconductor, magnetic, optical or electronic materials.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number

893

Extent

Approximately 27 dated entries over 56 pages.

Dimensions

12 x 10 inches

Description

This volume contains proposals and results of experiments that led to a patent on the use of polycrystalline silicon technology for isolation in ICs. Specific entries include: a suggested polycrystalline structure (p. 1); process flow and SEM images, and electrical characteristics of MSAI material with various isolation variations (pp. 3 – 13); epitaxial silicon on sapphire process experiments (pp. 14-19); patent disclosure for U.S. patent 3736193 (below) is pinned to p. 24; poly and dielectric isolation investigations (pp. 26 – 56). A loose copy of a paper on Polycrystalline Silicon Technology by J. Schoeff of Motorola is inserted at front.

Patents

The author is named as inventor on 1 U.S. patent. This patent is assigned to Fairchild: