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Citation and License

Nanoscale Research Letters 2012, 7:652
doi:10.1186/1556-276X-7-652

Published: 27 November 2012

Abstract

CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and
reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical
properties of the sensitized photoelectrodes was studied. With optimization of CuInS2 SILAR cycles and introduction of In2S3 buffer layer, quantum dot-sensitized solar cells assembled with 3-μm thick TiO2 nanorod film exhibited a short-circuit current density (Isc) of 4.51 mA cm−2, an open-circuit voltage (Voc) of 0.56 V, a fill factor (FF) of 0.41, and a power conversion efficiency (η) of 1.06%, respectively. This study indicates that SILAR process is a very promising
strategy for preparing directly anchored semiconductor QDs on TiO2 nanorod surface in a straightforward but controllable way without any complicated
fabrication procedures and introduction of a linker molecule.