An accurate model is presented for the analysis of ion-implanted AlGaAs/GaAs multi-quantum well symmetric and asymmetric twin waveguides. The modal propagation constants, modal indices and field profiles of the leading supermodes are solved numerically by using a quasi-vector method based on the Finite Difference method. Impurity induced disordering defined multi-quantum well twin waveguides are shown to have similar optical properties as conventional dielectric rib waveguides. They provide a more flexible control over the waveguiding and coupling characteristics by changing the diffusion time, the ion implant energy, the mask width, the waveguide separation, and the operating wavelength. By suitably varying these parameters, single-mode operation can be achieved, while the coupling length can be theoretically tuned from a few millimeters to a hundred meters, a difference in the order of lOs. Impurity induced disordering produced waveguide arrays are therefore highly recommended for integrated photonic IC realisation.

An accurate model is presented for the analysis of ion-implanted AlGaAs/GaAs multi-quantum well symmetric and asymmetric twin waveguides. The modal propagation constants, modal indices and field profiles of the leading supermodes are solved numerically by using a quasi-vector method based on the Finite Difference method. Impurity induced disordering defined multi-quantum well twin waveguides are shown to have similar optical properties as conventional dielectric rib waveguides. They provide a more flexible control over the waveguiding and coupling characteristics by changing the diffusion time, the ion implant energy, the mask width, the waveguide separation, and the operating wavelength. By suitably varying these parameters, single-mode operation can be achieved, while the coupling length can be theoretically tuned from a few millimeters to a hundred meters, a difference in the order of lOs. Impurity induced disordering produced waveguide arrays are therefore highly recommended for integrated photonic IC realisation.

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S P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings

Copyright 1998 Society of Photo-Optical Instrumentation Engineers.
This paper was published in Integrated optic devices II, San Jose, California, USA, 28-30 January 1998, v. 3278, p. 207-218 and is made
available as an electronic reprint with permission of SPIE. One print or electronic copy may be
made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via
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