Research Center for Advanced Science and Technology, University of Tokyo, Meguro, Tokyo 153-8904, Japan

抄録

In order to develop a high-quality material that is lattice-matched to GaAs for III--V tandem solar cells, we introduce In0.16Ga0.84As/GaAs/GaAs0.79P0.21 strain-compensated multiple stepped quantum well (SC-MSQW). To maximize the contribution of the quantum well to the spectral response, we inserted a GaAs step layer between well and barrier. This leads to a stronger photoabsorption by the wells and enhanced carrier transport in the stacked wells. A short-circuit current density of 19.29 mA/cm2 was obtained under AM1.5G illumination, which is approximately 14% higher than that of a conventional quantum well solar cell.