Authors:

Xiaoyan Shi(Sandia National Laboratories)

Wenlong Yu(Georgia Institute of Technology)

Z. Jiang(Georgia Institute of Technology)

J.F. Klem(Sandia National Laboratories)

W. Pan(Sandia National Laboratories)

We fabricated a superconductor- semiconductor junction, by depositing a superconducting Ta film onto a band inverted InAs/GaSb bilayer. In this talk, we focus on electrical transport studies of this junction as a function of magnetic fields. At Zero magnetic field, the tunneling results show a zero bias conductance peak and this conductance peak survives in a field even up to 2~T. With further increasing magnetic field, the conductance peak eventually becomes a dip above 4~T. Finally, by tuning the front gate, we were able to measure the tunneling conductance when the InAs/GaSb bilayer is in the charge neutrality regime.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2014.MAR.Y43.1