Microsemi expands Silicon Carbide (SiC) power module product family

Microsemi Corp. has started to sample a new generation of industrial temperature, silicon carbide (SiC) standard power modules aimed at high power switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters, oil exploration and other high power, high voltage industrial applications requiring high performance and reliability.

The power module family is also offered with extended temperature ranges to meet next-generation power conversion system requirements for higher power densities, operating frequencies and efficiencies.

Microsemi's new industrial temperature SiC power modules feature multiple circuit topologies and are integrated into low profile packages. The majority of the new module product family uses aluminum nitride (AIN) substrates to enable isolation from the heat sink, which improves heat transfer to the cooling system.

Additional features include high speed switching, low switching losses, low input capacitance, low drive requirements, low profile and minimum parasitic inductance which enable high frequency, high performance, high density and energy-saving power systems.

The new industrial temperature module family includes the following parameters and devices:

Microsemi's SiC product portfolio includes Schottky diodes in both discrete and module packages, and power modules with a mix of SiC Schottky diodes and IGBT or MOSFET transistors in both standard and custom configurations.