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Published on

13 Aug 2014

Abstract

This model is valid under the assumption that the width of the p-region is sufficiently small so that injected minority carriers diffuse to the metal contact before recombining with majority carriers.
( Depletion Width

References

Si and Ge intrinsic carrier values are based on Thurmond's paper: The Standard Thermodynamics Functions for the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP

GaAs intrinsic carrier values are based on Blakemore's paper: Semiconducting and other major properties of gallium arsenide

For full details please see Chapter 5 of Streetman's and Banerjee's book " Solid State and Electronic Devices " Sixth Edition

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