Memristors were fabricated on flexible polyethylene terephthalate substrates consisting of an oxide film generated through hydrolysis of a spun-on sol-gel. X-ray photoelectron spectroscopy, spectroscopic ellipsometry, transmission electron microscopy, and electron energy loss spectroscopy measurements indicated that the oxide films were amorphous TiO2 with a significant fraction of organic material, causing a heterogeneous surface morphology. Despite the morphology and the organic material, these memristors exhibit switching similar to ,traditionalŠ memristors. Also, current-voltage (I-V) measurements suggest that this switching was not due to the electric field in the memristors. Additionally, thermal imaging measurements and I-V measurements performed after sectioning the memristors suggest that conduction occurred via localized conduction pathways. Capacitance-frequency and conductance-frequency measurements indicate an additional dielectric loss mechanism was present prior to switching to the higher current state. This loss mechanism is attributed to dipoles present in the organic components of the oxide films from the original sol-gel.