A method to prepare metal-insulator-metal field-effect transistor (TFTs) is reported. The study fabricated a substrate-gate structure thin-film transistor by growing an oxide SiO 2 layer on a doped n-type Si substrates. The study also used a source and drain electrodes with a monolayer/multilayer films for thermal evaporation. A scanning electron microscopy (SEM) was used during the study to analyze the electrode-only structures. It was observed during the study that the reduction of the density of states can increase the relative field effects. The study also found that a channel can be prepared by the same material as the source and drain contacts for a metal TFT, that can reduce the cost of production of TFTs. It was also observed that the metal TFT has an infinite on-off ratio.

A method to prepare metal-insulator-metal field-effect transistor (TFTs) is reported. The study fabricated a substrate-gate structure thin-film transistor by growing an oxide SiO 2 layer on a doped n-type Si substrates. The study also used a source and drain electrodes with a monolayer/multilayer films for thermal evaporation. A scanning electron microscopy (SEM) was used during the study to analyze the electrode-only structures. It was observed during the study that the reduction of the density of states can increase the relative field effects. The study also found that a channel can be prepared by the same material as the source and drain contacts for a metal TFT, that can reduce the cost of production of TFTs. It was also observed that the metal TFT has an infinite on-off ratio.