MVS III-V HEMT model 1.2.0

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.

Description

This version of the MVS model is specifically targeted toward III-V HEMT devices that show a reduction in the transconductance at high drain currents.The model also accounts for the quantum mechanical correction to the gate-channel capacitance.

Finally, the static transport model is supplemented with a charge partioning model. As in the previous MVS model versions, we provide the drift-diffusion non-velocity saturation model (DD-NVSAT) and blended quasi-ballistic charge model.

Provided below are the Verilog-A version of the MVS 1.2.0 HEMT model. Also provided below is a MATLAB version of this model ("mvs_hemt_1_2_0.m").