A metalorganic chemical vapor deposition (MOCVD) was used to grow both double-heterostructure wafers and circular buried heterostructures for GaAlAs/GaAs surface emitting lasers. A vertical microcavity was formed with a diameter of 10 Î¼m and a cavity length of 6 Î¼m by a two-step MOCVD growth and fully monolithic technology. Threshold currents under room-temperature pulsed conditions ranged from 50 to 100 mA with a minimum of 50 mA. cw operation up to 160 K was obtained. In addition, a densely packed 5Ã—5 SE laser array with 20 Î¼m separation was demonstrated with a minimum threshold of 600 mA.

We report the first successful room-temperature GaInAsP-InP double-heterostructure laser emitting at 1.27 Î¼m, grown by low-pressure metalorganic chemical vapor deposition on a Si substrate. A pulsed threshold current density of 10 kA/cm2 at room temperature with an external quantum efficiency...

High quality buried heterostructure (BH) lasers were grown by a two-step metalorganic chemical vapor deposition. Single stripe BH lasers exhibited thresholds of 20 mA for a 1.2-Î¼m stripe. The spectral output emits in a single transverse and longitudinal mode up to 15 mW, with a side lobe...

Using graded refractive index, single quantum well GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates, we have obtained injection lasers with broad area pulsed thresholds of 3.5 kA/cm2 at 300 K. With the current flow restricted to 5-Î¼m-wide stripes, pulsed thresholds...

We used metalorganic chemical vapor deposition to fabricate a planar-embedded InGaAsP/InP heterostructure laser with a semi-insulating InP current-blocking layer. The laser exhibits cw operation with a low, 20 mA threshold current and a high external differential quantum efficiency of 40% at...