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Abstract

We have fabricated vertical p-i-n silicon photodetectors that are
monolithically integrated with compact silicon-oxynitride channel
waveguides. By comparing the evanescent coupling from low index-contrast
waveguides and compact, high index-contrast waveguides, the dependence of
evanescent coupling behavior on the waveguide index and geometry designs was
analyzed. The effects of fabrication variations in the coupling structure
have been studied and it was found that an offsetting step in the waveguide
can help compensate for the mode mismatch at the transition interface from
the input bus waveguide to the waveguide on top of the photodetector.
Finally, we present a design map, built by drawing the evanescent coupling
rate contour lines in the waveguide design space, which well predicts the
evanescent coupling trends.

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