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SpectraShape™

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SpectraShape™

Optical Critical Dimension (CD) and Shape Measurement Systems

The SpectraShape™ 10K dimensional metrology system is used to fully characterize and monitor the critical dimensions (CD) and three dimensional shapes of finFETs, vertically stacked NANDs and other complex features on integrated circuits at the 1Xnm design nodes and beyond. Using a diverse array of optical technologies and patented algorithms, the SpectraShape 10K optical CD and shape measurement system provides feedback on critical device parameters (critical dimension, metal gate recess, high k recess, side wall angle, resist height, hard mask height, pitch walking) for a broad range of applications across the IC fab, from the early layers of leading-edge transistors to the last interconnect layers.

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SpectraFilm™

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SpectraFilm™

Film Metrology Systems

The SpectraFilm™ F1 film metrology system helps achieve strict process tolerances at sub-7nm logic and leading-edge memory design nodes by providing high-precision thin film measurements for a broad range of film layers. The high brightness light source drives the spectroscopic ellipsometry technology which provides the signal required to accurately measure the bandgap and provide insight into electrical performance weeks earlier than e-test. New FoG™ (Films on Grating) algorithms further increase the measurement’s correlation to device by enabling film measurement on a device-like grating structure. With increased throughput, SpectraFilm F1 offers high productivity, supporting the increased number of film layers associated with leading-edge device fabrication techniques.

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SpectraFilm LD10: The SpectraFilm™ LD10 film metrology system provides reliable, high-precision measurements of thin and thick film thickness, refractive index and stress for a broad range of film layers at the 16nm design node and beyond.

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Aleris®

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Aleris®

Film Metrology Systems

The Aleris® film metrology systems provide reliable and precise measurement of film thickness, refractive index, stress and composition for the 32nm node and beyond. Utilizing Broadband Spectroscopic Ellipsometry (BBSE) technology, the Aleris film metrology systems form a comprehensive film thickness measurements and metrology solution, helping fabs to qualify and monitor a broad range of film layers.

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Aleris 8330The Aleris 8330 film metrology system is a low cost-of-ownership solution for non-critical films, including inter-metal dielectrics, photoresists, bottom anti-reflective coatings, thick oxides and nitrides, and back end of line layers.

Aleris 8350The Aleris 8350 is a high-performance film metrology system that meets the tighter process tolerances required for thickness, refractive index and stress measurements on critical films. The Aleris 8350 film thickness measurement system is used for advanced film development, characterization and process control for a wide range of critical films, including ultra-thin diffusion layers, ultra-thin gate oxides, advanced photoresists, 193nm ARC layers, ultra-thin multi-layer stacks, and CVD layers.

Aleris 8510The Aleris 8510 extends the Aleris Family’s film thickness measurements, composition, and stress measurement capability to advanced high k metal gate (HKMG) and ultra-thin decoupled plasma nitridation (DPN) process layers. Utilizing enhanced 150nm Broadband Spectroscopic Ellipsometry technology, the Aleris 8510 film thickness measurement system provides engineers with the film metrology data required for development and inline monitoring of DPN layers and all HKMG layers – from gate through poly, including Hf and N dose and film thickness measurements.

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CIRCL™

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CIRCL™

The CIRCL™ cluster tool has four modules, covering all wafer surfaces and providing parallel data collection at high throughput for efficient process control. The modules comprising the latest-generation CIRCL5 system include: front side wafer defect inspection; wafer edge defect inspection, profile, metrology and review; backside wafer defect inspection and review; and, optical review and classification of front side defects. Data collection is controlled by DirectedSampling™, an innovative approach that uses results from one measurement to trigger other types of measurements within the cluster. The modular configuration of CIRCL5 offers flexibility for varying process control needs, saves overall fab space, reduces wafer queue time, and provides a cost-effective upgrade path to protect a fab's capital investment.