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New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology

dc.contributor.author

Thaw Zin Myint.

en_US

dc.date.accessioned

2008-09-17T09:32:48Z

dc.date.available

2008-09-17T09:32:48Z

dc.date.copyright

2004

en_US

dc.date.issued

2004

dc.identifier.uri

http://hdl.handle.net/10356/3576

dc.description.abstract

Open-circuit and short-circuit defects in electrical conductors within integrated circuits (ICs) can result in major IC yield and reliability problems. A capability for localizing and identifying these types of defects is important for analyzing ICs to determine failure mechanisms therein, for qualifying ICs as known-good devices, and for implementing corrective action during IC fabrication to minimize the occurrence of such defects.