We report a study of the formation of nitride surface layers on
semiconductor (Si) and metal (Ti) samples by multipuise (up to 2500)
XeC1 excimer laser (A=308 nm) irradiation in N2 and NH atmosphere.
After irradiation the samples were examined by optical and electron
microscopy (SEM) . and then analyzed by Rutherford backscattering spectroscopy
(RBS) , nuclear reaction analysis (NRA) , Auger and X-ray photoelectron
spectroscopy (XPS) to positively identify the formed cornpounds.
The electrical characteristics of the laser synthesized
nitride layers were also measured. The amount of nitride has been
observed to depend on the number of subsequent laser pulses and on the
nature of the ambient gas.