The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction fr ...

The present invention provides a selectively conductive organic semiconductor (e.g., polymer) device that can be utilized as a memory cell. A polymer solution including a conducting polymer (22) self assembles relative to a conductive electrode (26). The process affords self-assembly such that a sho ...

The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction fr ...

A method of fabricating an electronic structure by providing a conductive layer (102), providing a dielectric layer (100) over the conductive layer (102), providing first and second openings (104, 106) through the dielectric layer (100), providing first and second conductive bodies (108, 110) in the ...