Abstract

Edge‐on observations of the structures of vicinal interfaces of GaAs/AlAs heterostructures were carried out by high‐resolution electron microscopy. In order to observe the interfacial steps running along the 〈110〉 direction edge‐on, we demonstrate the imaging conditions for high‐resolution observations in the 〈110〉 projection. Under these conditions, the structures of GaAs/AlAs interfaces, which were grown on the vicinal (001) substrate tilted toward [110], are examined in the [1̄10] projection. The interfacial structures are imaged edge‐on, so that the monolayer height steps were observed. The results reveal fluctuations of terrace width and the roughness of step edges on an atomic scale.