Graphene has been widely studied because of its high mobility, superior mechanical properties and excellent thermal and chemical stability. This paper describes a novel and flexible method to fabricate graphene interdigitated electrodes and all-carbon field effect transistor (FET). In this approach, graphene is first grown by chemical vapor deposition (CVD) and assembled onto a microelectrode chip. Then, an atomic force microscopy (AFM) based mechanical machining method is employed to cut the graphene into interdigitated electrodes with nanogaps. Finally, single-walled carbon nanotubes (SWCNTs) are assembled onto the graphene interdigitated electrodes using dielectrophoresis to complete the FET device. The electrical properties of the fabricated SWCNT-graphene FET were investigated, and the I-V curves demonstrated the p-type nature of SWCNTs in the FET.

1.State Key Laboratory of Robotics, Shenyang Institute of Automation, CAS, Shenyang, China2.University of Chinese Academy of Sciences, Beijing, China3.Department of Mechanical Engineering, University of Arkansas, Fayetteville, United States