Abstract

A high performance RF (radio-frequency) switch based on the phase change effect in germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent thin film heating element for 0.1–1.5 μs toggles the switch in a latching fashion. Being non-volatile, no power is required to hold the switch in the on- or off-state. State-of-the-art solid-state RF switches currently in use have an on-state loss of 1 dB; here, we demonstrate an inline phase change switch with a low on-state resistance showing over a frequency range of 0-40 GHz an insertion loss of just 0.1–0.24 dB.

The authors would like to thank J. S. Mason, Jr., for his assistance in the lithographic definition of the reported switch, and to thank Carnegie Mellon University Professors E. Schlesinger, J. Bain, and J. Paramesh, and their students G. Slovin, M. Xu, and A. Khairi for their many useful comments, and to thank Dr. W. Chappell of DARPA for his encouragement and support. This work was funded in part by DARPA Contract No. HR0011-12-C-0095. The views expressed are those of the authors and do not reflect the official policy or position of the Department of Defense or the U.S. Government. This is in accordance with DoDI 5230.29, January 8, 2009. This content has been approved for public release.

Abstract

A high performance RF (radio-frequency) switch based on the phase change effect in germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent thin film heating element for 0.1–1.5 μs toggles the switch in a latching fashion. Being non-volatile, no power is required to hold the switch in the on- or off-state. State-of-the-art solid-state RF switches currently in use have an on-state loss of 1 dB; here, we demonstrate an inline phase change switch with a low on-state resistance showing over a frequency range of 0-40 GHz an insertion loss of just 0.1–0.24 dB.