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Method for resist material removal for the rework of wafers in lithography using the spin/coater track system

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for resist material removal for the rework of wafers in lithography using the spin/coater track system. Benefits include improved functionality, improved yield, and reduced test wafer consumption.

Country

Undisclosed

Language

English (United States)

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This is the abbreviated version, containing approximately
53% of the total text.

Method for resist
material removal for the rework of wafers in lithography using the spin/coater
track system

Disclosed is a method for resist
material removal for the rework of wafers in lithography using the spin/coater
track system. Benefits include improved
functionality, improved yield, and reduced test wafer consumption.

Background

During wafer processing, resist material removal may be
required immediately after lithographic processing prior to etching due to
alignment or exposure issues or tool errors. Wafers with exposed metal layers
are limited to one ash/rework process step due to reliability issues with asher
temperatures and increased average grain size and additional TiAl3 formation
between the AlCu and Ti shunt layer. Wafers out of disposition limits that have
exceeded the rework limit are scrapped in-line due to reliability concerns. Additionally, the ability of registration
tools to measure layer-to-layer alignment is compromised by the roughened
surface. In some cases, the use of special
doses for reworked material is required to ensure critical dimensions are
within control limits.

The use of very clean wafers for defect monitoring of litho
tool is a common practice. These wafers
have historically only be available for use once since attempting to clean them
using an etch asher has left ghost residual images on the wafers and results in
too many residual particles.

Conventionally, the standard fabrication process for wafer
lithography rework for is comprised of an etch asher to remove resist material
prior to reprocessing.

General description

The disclosed method is a process to use lithography track
chemicals to completely remove resist material during a rework process. The
method uses PBR-40 (ethyl lactate, also ethyl alpha-hydroxypropionate), which
is typically part of a lithography track module (backside edge bead removal or
EBR) as a method for wafer rework (resist r...