Samsung Galaxy Note 9 and Galaxy S9 may have 512GB of storage

Samsung announced that it is starting mass production of upgraded memory technology today-the first 512GB embedded universal flash storage (eUFS) device made for mobile devices, including smartphones and tablets.

Jaesoo Han, Executive Vice President of Memory Sales and Marketing at Samsung Electronics says the following about company's vision in paving the way for mobile phones to exhibit higher levels of internal storage.

With 512GB of storage, Samsung says you'll be able to store around 130 4K videos (3840 x 2160) that are each 10-minutes long on a smartphone. That sort of content is becoming more popular as sharper displays and enhanced cameras are included on smartphones. It is going to change soon, you will be seeing 512GB storage on the smartphones, especially, the Samsung flagships. Obviously, these chips are being used in more than just mobile phones, since SSDs and high-performance removable memory cards also take advantage of their performance and reliability. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world".

High storage phones models now come with 128GB or 256GB of memory, but Samsung's new 512GB chip is double or quadruple that.

The new 512GB UFS device consists of eight 64-layer 512-gigabit V-NAND chips stacked together with a controller chip. While the company's press release does not specifically mention which version of the UFS interface had been implemented, Samsung did state that the storage package could attain "sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively" putting it very much in the ballpark of UFS 2.0. That's eight times faster than a microSD card and equivalent to transferring 5GB of HD video to an SSD in six seconds.

Would you still be interested in picking up the Galaxy S9 if it shipped with 500GB of internal flash storage instead of a microSD slot? When it comes to random operations, Samsung's 512 GB eUFS offers up to 42,000/40,000 read/write IOPS, similar to the predecessors featuring 48-layer 256 Gb V-NAND ICs. Tell us your thoughts down in the comments.

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