Abstract

We report the experimental evidence for the formation of multi-quantum dots in a hydrogenated
single-layer graphene flake. The existence of multi-quantum dots is supported by the
low-temperature measurements on a field effect transistor structure device. The resulting
Coulomb blockade diamonds shown in the color scale plot together with the number of
Coulomb peaks exhibit the characteristics of the so-called ‘stochastic Coulomb blockade’.
A possible explanation for the formation of the multi-quantum dots, which is not observed
in pristine graphene to date, was attributed to the impurities and defects unintentionally
decorated on a single-layer graphene flake which was not treated with the thermal
annealing process. Graphene multi-quantum dots developed around impurities and defect
sites during the hydrogen plasma exposure process.