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Abstract

Disclosed is a process for obtaining a self-aligned extrinsic base in an epitaxial-base bipolar process with no additional lithography. The process self-aligns the extrinsic base to the edge of the field oxide region, avoiding implantation and any annealing steps following base deposition. This process can be implemented both with Recessed Oxide isolation (ROX) and Shallow Trench isolation (ST).

Country

United States

Language

English (United States)

This text was extracted from an ASCII text file.

This is the abbreviated version, containing approximately
87% of the total text.

Disclosed is
a process for obtaining a self-aligned extrinsic
base in an epitaxial-base bipolar process with no additional
lithography. The process self-aligns the
extrinsic base to the edge
of the field oxide region, avoiding implantation and any annealing
steps following base deposition. This
process can be implemented
both with Recessed Oxide isolation (ROX) and Shallow Trench isolation
(ST).

The fabrication sequence is the
following. After patterning
the pad oxide and nitride layers prior to the silicon etch, the
silicon is partially recessed (to ~ 200 nm) as illustrated in Fig.
1(a). The resist is stripped, a heavily
boron-doped low temperature
oxide is deposited and a disposable sidewall is formed (Fig. 1(b)).
A diffusion step such as a Rapid Thermal Anneal step at 1050~C then
drives boron into the silicon. The
diffusion time and temperatures
can be adjusted to select the width and doping of the extrinsic base
region. The surface concentration is
given by the boron solid
solubility at the anneal temperature chosen.
The sidewall is then
removed and the etch of the silicon can be completed using nitride as
a mask (Fig. 1(c)). A thermal oxidation
follows for ROX and oxide
deposition follows for ST isolation (Fig. 1(d)).

Alternatively, one could use a thin, supersaturated Low
Temperature Epitaxial Silicon layer. Out
diffusion...