Abstract

A study on epitaxial lateral overgrowth (ELO) of GaN on Si (111) was performed for ELO layer thicknesses below 3 μm. A complete coalescence was achieved for ELO of GaN on Si using a 10 μm mask period with stripes. The transmission electron microscopy and atomic force microscopy experiments were used to investigate the optical quality of the layers. An intense excitonic luminescence and a dislocation density of 5×107 cm-2 were also found.

abstract = "A study on epitaxial lateral overgrowth (ELO) of GaN on Si (111) was performed for ELO layer thicknesses below 3 μm. A complete coalescence was achieved for ELO of GaN on Si using a 10 μm mask period with stripes. The transmission electron microscopy and atomic force microscopy experiments were used to investigate the optical quality of the layers. An intense excitonic luminescence and a dislocation density of 5×107 cm-2 were also found.",

N2 - A study on epitaxial lateral overgrowth (ELO) of GaN on Si (111) was performed for ELO layer thicknesses below 3 μm. A complete coalescence was achieved for ELO of GaN on Si using a 10 μm mask period with stripes. The transmission electron microscopy and atomic force microscopy experiments were used to investigate the optical quality of the layers. An intense excitonic luminescence and a dislocation density of 5×107 cm-2 were also found.

AB - A study on epitaxial lateral overgrowth (ELO) of GaN on Si (111) was performed for ELO layer thicknesses below 3 μm. A complete coalescence was achieved for ELO of GaN on Si using a 10 μm mask period with stripes. The transmission electron microscopy and atomic force microscopy experiments were used to investigate the optical quality of the layers. An intense excitonic luminescence and a dislocation density of 5×107 cm-2 were also found.