i really really really like this paper: www.ims-chips.de/content/pdfpublicationorig/471orig.pdf (copper electroplating for integrated rf-devices). there's only one term i don't quite get. the iv. conclusions section on page 6 says "A paddle cell has been successfully used for the electrochemical deposition of smooth, bright Cu blanket films onto 4" Si wafers. The uniformity of the film thickness can be kept within tight limits by activation of a copla

azonenberg: that's what i wanted to do: implement their process as much as possible. i was going to immediately shoot down any part of their process that i couldn't do (sputter) and consider the things i can't do right now but maybe could do with a little effort (photolithography)

it used to be i couldn't learn from anything but really good lectures. but video lectures are time consuming and i have to really scrub through to find something good. textbooks are my current obsession

i'm easily not the smartest girl in the EE department, but i'm saddened that i am probably the most knowledgeable in my lab of the next batch of grad students. i don't know very much and i can't learn much from my peers =\

silicon (maybe with a thin native oxide) with copper on it (bottom contact) then metal oxide on top of the bottom contact then i can use the tungsten probe of my IV curve tracer to serve as the top contact

"Given that the momentum per electron is p(t) at time t, let us calculate the momentum per electron p(t + dt) an infinitesimal time dt later. An electron taken at random at time t will have a collision before time t + dt, with probability dt/tau, and will therefore survive to time t + dt without suffering a collision with probability 1 - dt/tau."

"If it experiences no collision, however, it simply evolves under the influence of the force f(t) (due to the spatially uniform electric and/or magnetic fields) and will therefore acquire an additional momentum f(t) dt - O(dt)^2."