MOSFET architecture to ‘revive’ Moore’s Law

In a move which it says has the potential to 'revive' Moore's Law, FinScale has unveiled qFinFET, a 3D MOSFET architecture and process designed for use by foundries and integrated device manufacturers alike.

FinScale says it has 'crafted' qFinFETs from a combination of device and process innovations and believes the architecture will scale to the end of the silicon MOSFET era. The technology is said to offer high density and high performance logic and memory configurations, along with inherent low noise analogue/RF device characteristics.

"FinScale's qFinFET offers manufacturers a high yield 3D process for building scalable aspect ratio fins that can be formed without double patterning down to the 14/16 nm node and which can provide increased performance and transistor width per unit area," said Jeffrey Wolf, the company's president and CEO.

Chief technology officer Dr Victor Koldyaev added: "We conceived of the Quantum FinFET by pushing silicon to its quantum scaling limits, while seeking to maximise carrier mobility, electrostatic gate control, yield and reliability. Using this approach, we designed the qFinFET front end of line device and process for the 7 and 10nm generations and were pleased the same device concept would boost parametric performance and economic returns for manufacturers back to the 28/32nm node.

"We then laid out standard cells, SRAMs, eDRAMs and 2bit/cell non volatile memories using industry standard design rules and realised we could exceed the best published results at those nodes and give manufacturers and designers opportuniti es for further improvement."