Abstract

The influence of the polarization effects on the energy band structures and electrical properties of GaN-based heterostructures has been investigated by means of capacitance-voltage measurements of based metal-insulator-semiconductor (MIS) structures at various frequencies and temperatures. profile shows a distinctive hump at about in the MIS structures, indicating the formation of the inversion mode in the MIS structures. It is thought that the inversion is due to the hole accumulation in the hole well formed at the top heterointerface induced by the strong polarization-induced electric fields. The theoretical calculation of the band structure of heterostructure confirms the physical model for the inversion behaviors.

Received 24 January 2006Accepted 02 May 2006Published online 12 June 2006

Acknowledgments:

This work was supported by the National Natural Science Foundation of China (No. 60325413), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (No. 705002), Beijing Natural Science Foundation (No. 4062017), and Special Funds for Major State Basic Research Projects of China.