With today's announcement, it has named “upcoming flagship smartphones and tablets” as the ideal application.

Another possible market is the imminent Microsoft/Qualcomm Windows-10-on-ARM laptops. The Register understands these devices will all-but-expect an LTE connection but will not be made worse by 512GB of power-sipping storage.

The 64-layer V-NAND chips should also do well in other embedded devices, which are expected to soon proliferate as 5G networks create possibilities for sophisticated devices in a great many locations. A decent slab of storage seldom goes astray: now it's easy to acquire.

Speed is sufficient for most application: Samsung has promised “sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively” and random data access speeds of 42,000 IOPS when reading and 40,000 IOPS when writing.

Samsung also said it “intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production. This should meet the increase in demand for advanced embedded mobile storage, as well as for premium SSDs and removable memory cards with high density and performance.” ®