Abstract

High‐power operation of hydrogenated AlyGa1−yAs‐GaAs‐InxGa1−xAs ten‐stripe arrays operating at λ∼1.06 μm is described. Continuous (cw) operation of arrays with uncoated facets that are stabilized in temperature at 10 °C has produced output powers as high as 375 mW/facet at 1.4 A. The optical coupling of the gain‐guided arrays is shown to be significantly different from otherwise similar arrays fabricated in the AlyGa1−yAs‐GaAs system. Limited ‘‘lifetesting’’ (168 h) of these strained layer diodes, stabilized at 50 °C and a cw output power of 100 mW/facet (200 mW total), indicates good operating stability.