Abstract

The diffusion of iron in indium phosphide is found to proceed via the kick‐out diffusion mechanism. A Fe diffusion profile in InP available from the literature is simulated using the complete set of three partial differential equations for the kick‐out mechanism. A value for the contribution of indium self‐interstitials to the self‐diffusion coefficient of InP is extracted and found to be much smaller than the known self‐diffusion coefficient determined from indium tracer diffusion measurements. Possible reasons for the observed difference are discussed. Furthermore, an analogy of diffusion in InP to diffusion in GaAs is suggested.