USMRG1421BO25W Beryllium Oxide [BeO] 227.36GHz Microwave Thin Film Chip Resistor Single (Half) Wraparound 227GHz Half Wrap Thin Film Chip Resistor 25 mils Beryllium Oxide BeO 14 x 21 mils for microwave applications manufactured by US Microwaves
USMRG1421BO25W Beryllium Oxide [BeO] 227.36GHz Microwave Thin Film Chip Resistor Single (Half) Wraparound
227GHz Half Wrap Thin Film Chip Resistor 25 mils Beryllium Oxide BeO 14 x 21 mils for microwave applications
manufactured by US Microwaves US MICROWAVES Beryllium Oxide [BeO] 227.36GHz Microwave Thin Film Chip Resistor Single
(Half) Wraparound Advanced Microwave Components USMRG1421BO25W FEATURES APPLICATIONS 227GHz Half Wrap Thin Film Chip
Resistor Wide resistance range: 0.1Ω to 1700kΩ, 1% resistor tolerance available Good TCR tracking Very low capacitance
value Low insertion loss Available in die form and shipped in waffle packs or film frame High power dissipation while
working up to GHz range frequencies High reliability and ruggedness Small chip size with reduced stray capacitance per
unit area Low temperature coefficient and wide operating temperature range Lab Kit available Biasing discrete
transistors circuits Feedback resistors for amplifiers Microwave and RF terminations Resistive microwave dividers
Wilkinson power dividers Attenuators Microwave amplifiers Transimpedance amplifiers Optical communication receivers
Chip and wire hybrid circuits Beryllium Oxide [BeO] 227.36GHz Microwave Thin Film Chip Resistor Single (Half)
Wraparound USMRG1421BO25W PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USMRG1421BO25W 21x14 mils, 25 mils thickness
Beryllium Oxide (BeO) 227.36GHz microwave thin film single (half) wraparound chip resistors series is designed to be
used in microwave hybrid circuits for biasing of active components and as feedback resistors for high speed
transimpedance amplifiers for optical communication receivers. These devices are specifically designed and manufactured
to be compatible with gold wire bonding. These devices can be used over the full military temperature range -55°C to
+125°C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle
packs or film frame. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet
resistance films from 1Ω/sq to 10,000Ω/sq. Resistors from 0.1Ω to x MΩ range are available. The resistive material is
high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. TECHNOLOGY
DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced
semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold
interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability.
Thin film technology is the preferred solution for all applications that require low noise, long term stability and
excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition
of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are
available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves
products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL CHARACTERISTICS
@25°C PARAMETER VALUE UNITS Resistance range 0.1 to 1700000 Ω Capacitance (maximum) 0.014 pF Power dissipation 59.12
mW/°C 3dB frequency (R=50Ω) 227.36 GHz Temperature Coefficient -55°C to 150°C 75 ppm/°C Operating Temperature range -55
to +150 °C Maximum working voltage (R=50Ω) 1.72 V Peak voltage at 25°C, 5 sec 2.43 V Insulation Resistance @25°C 1e+12
Ω RC constant (R=50Ω) 0.7 ps Note: Power dissipation is provided for a temperature difference of 1°C between substrate
and thermal (solder) joint. 227GHz Half Wrap Thin Film Chip Resistor - GENERAL DIE INFORMATION SUBSTRATE THICKNESS
[mils] DIE SIZE LxW [mils] Beryllium Oxide (BeO) 25±0.5 21x14±2 (0.53x0.36±0.05 mm) RESISTOR BONDING PADS BACKSIDE
METAL The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance,
<75ppm/°C typical. For Rsq<10Ω/sq and Rsq>500Ω/sq, the resistive material is proprietary. The bonding pads of the
resistors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without
loss of adhesion. The backside of the die is NOT metallized. Standard TiW/Au or other custom metallizations are
available upon special request. All US Microwaves products are available in die form. Typical delivery for die products
is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory
is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in
waffle packs (WP). 227GHz Half Wrap Thin Film Chip Resistor - DIE LAYOUT & MECHANICAL SPECIFICATIONS Beryllium Oxide
[BeO] 227.36GHz Microwave Thin Film Chip Resistor Single (Half) Wraparound USMRG1421BO25W Note: Image shows area
occupied by resistor. Layout for resistor might differ for 1% tolerance due to laser trim requirements. 227GHz Half
Wrap Thin Film Chip Resistor S PARAMETERS Beryllium Oxide [BeO] 227.36GHz Microwave Thin Film Chip Resistor Single
(Half) Wraparound USMRG1421BO25W RETURN LOSS S-PARAMETERS POWER DERATING DIAGRAM Beryllium Oxide [BeO] 227.36GHz
Microwave Thin Film Chip Resistor Single (Half) Wraparound USMRG1421BO25W Power Derating 227GHz Half Wrap Thin Film
Chip Resistor CHIP MOUNT Beryllium Oxide [BeO] 227.36GHz Microwave Thin Film Chip Resistor Single (Half) Wraparound
USMRG1421BO25W 227GHz Half Wrap Thin Film Chip Resistor mount 227GHz Half Wrap Thin Film Chip Resistor ASSEMBLY PROCESS
- SHORT APPLICATION NOTE 227GHz Half Wrap Thin Film Chip Resistor are designed for critical designs where space is at
premium. The Alumina, Aluminum Nitride, Berillium Oxide, Fused Silica or Silicon Microwave Thin Film Chip Resistor can
ALL be die attached with conductive epoxy. AuSn or AuGe performs can be used to die attach devices with standard
backside metallization of TiW/Au. Sn or SnPb can be used to die attach devices with standard backside metallization of
Ti/Ni/Au. Ti/Pt/Au and Ti/Pd/Au are custom backside metallizations that have the advantage of being compatible with All
methods of die attaching. 227GHz Half Wrap Thin Film Chip Resistor have metallized gold pads as terminals and they have
to be attached using gold wire after the backside is soldered in place. STANDARD PRODUCTS ORDERING INFORMATION USM P/N
R [Ω] PACKAGE MIN. QTY U/P [$] ORDER STOCK QTY U/P [$] ORDER USMRG1421BO25W-500-1%-WP 50 WAFFLE PACKS 10 RFQ
USMRG1421BO25W-500-1%-FF 50 FILM FRAME 500 RFQ EIA-24 PART NUMBER BUILDER TOLERANCE [%] R [Ω] Multiplier PACKAGE P/N
FINDER INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: DELIVERY: SHIPPING/PACKAGING: SAMPLES: GUARANTEED
SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order
quantities are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no
responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which
may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without
prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are
intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or
nuclear facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support
PDF Request Quote Inventory Place Order Contact sales

USMRG1421BO25W 21x14 mils, 25 mils thickness Beryllium Oxide (BeO) 227.36GHz microwave thin film single (half) wraparound chip resistors series is designed to be used in microwave hybrid circuits for biasing of active components and as feedback resistors for high speed transimpedance amplifiers for optical communication receivers.
These devices are specifically designed and manufactured to be compatible with gold wire bonding.
These devices can be used over the full military temperature range -55°C to +125°C.
Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs or film frame. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1Ω/sq to 10,000Ω/sq. Resistors from 0.1Ω to x MΩ range are available. The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical.

TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING

All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self
passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity,
performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability
and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range
of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are
ideal for high reliability hybrid and multi chip module applications.
All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of
Semiconix Corporation.

ELECTRICAL CHARACTERISTICS @25°C

PARAMETER

VALUE

UNITS

Resistance range

0.1 to 1700000

Ω

Capacitance (maximum)

0.014

pF

Power dissipation

59.12

mW/°C

3dB frequency (R=50Ω)

227.36

GHz

Temperature Coefficient -55°C to 150°C

75

ppm/°C

Operating Temperature range

-55 to +150

°C

Maximum working voltage (R=50Ω)

1.72

V

Peak voltage at 25°C, 5 sec

2.43

V

Insulation Resistance @25°C

1e+12

Ω

RC constant (R=50Ω)

0.7

ps

Note: Power dissipation is provided for a temperature difference of 1°C between substrate and thermal (solder) joint.

227GHz Half Wrap Thin Film Chip Resistor - GENERAL DIE INFORMATION

SUBSTRATE

THICKNESS [mils]

DIE SIZE LxW [mils]

Beryllium Oxide (BeO)

25±0.5

21x14±2 (0.53x0.36±0.05 mm)

RESISTOR

BONDING PADS

BACKSIDE METAL

The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. For Rsq<10Ω/sq and Rsq>500Ω/sq, the resistive material is proprietary.

The bonding pads of the resistors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion.

The backside of the die is NOT metallized. Standard TiW/Au or other custom metallizations are available upon special request.

All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For
Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip
and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).

227GHz Half Wrap Thin Film Chip Resistor are designed for critical designs where space is at premium.
The Alumina, Aluminum Nitride, Berillium Oxide, Fused Silica or Silicon Microwave Thin Film Chip Resistor can ALL be die attached with conductive epoxy.
AuSn or AuGe performs can be used to die attach devices with standard backside metallization of TiW/Au. Sn or SnPb can be used to die attach devices
with standard backside metallization of Ti/Ni/Au. Ti/Pt/Au and Ti/Pd/Au are custom backside metallizations that have the advantage of being compatible
with All methods of die attaching.
227GHz Half Wrap Thin Film Chip Resistor have metallized gold pads as terminals and they have to be attached using gold wire after the backside is soldered in place.

List prices are for standard products, available from stock and will be provided during ordering process.
List prices for other quantities and tolerances are available on line through Instant Quote. For standard
products available from stock, there is a minimum order quantity as listed. For orders less that $125/line item,
there is a $25 Die Handling Charge - DHC. For custom products please inquire by contacting US Microwaves technical
sales. No rights can be derived from pricing information provided on this website. Such information is indicative
only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.

Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case-by-case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.

INSTANT QUOTE

US Microwaves P/N

Quantity

E-mail

ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Items available from stock are delivered within 2-3 days ARO. For same day delivery, a $25.00 rush charge -RSC is added to the invoice.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.