In order to better understand the mechanism of molecular-beam epitaxy (MBE) growth on GaAs(OOl), itisessential to know the structure of the arsenic rich (2X 4 )/e(2X 8) surface where growth usually… (More)

The scanning tunneling microscope (STM) has been used to study the (2X4)-c(2&&8) reconstruction on the arsenic-rich surface of GaAs(001). The STM images show that the 4& periodicity is due to a… (More)