Qualcomm Snapdragon 835 based on Samsung’s 10nm process announced with quick charge 4.0

Qualcomm has officially announced next-gen Snapdragon 835 flagship processor. The chipmaker has announced it partnering with Samsung to develop the new chip which is built on 10nm FinFET node that entered mass production in October.

According to Qualcomm, the new 10nm FinFET process is up to 30 percent more area efficient and offers 27 percent improved performance or 40 percent less power consumption. The reduced footprint will allow hardware manufacturers to make smaller devices or include other components.

The new processor comes with new Quick Charge 4. As per company, Quick Charge 4 provides 20 percent faster charging and 30 percent higher efficiency than Quick Charge 3. It also supports USB-C and USB Power Delivery standards, which, we assume, means you will be able to fast charge USB-PD devices such as last year’s Nexus and the new Pixel phones, as well as the new USB-C MacBooks using a Quick Charge 4 charger.

Quick Charge 4 comes with third generation INOV or Intelligent Negotiation for Optimum Voltage, which now provides real-time thermal management. The company is also introducing two new power management ICs, the SMB1380 and the SMB1381, which have low impedance, up to 95% peak efficiency, and advanced fast charging features such as battery differential sensing.

The Snapdragon 835 is expected to be in devices in the first half of 2017 and will be mainly used in flagship devices as it is a high performance chipset.