Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragmentof a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips arepicked from each foil and placed on a special carrier for measurement purposes. The sampling density is one chip per2 cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a samplefails in that measurement, an area of 0,5 cm² around each failed sample is marked by pen. All el. values are referencedto the vendor's measurement system (correlation to customer product(s) is required)

2)

Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.This is not a specified value

3)

Radiant power is measured on TO-18 header in integrating sphere.

F 0118G

2003-04-10

3

Mechanische WerteMechanical values

BezeichnungParameter

SymbolSymbol

Wert

Value

1)

EinheitUnit

min.

typ.

max.

Chipkantenlänge (x-Richtung)Length of chip edge (x-direction)

L

x

0.28

0.30

0.32

mm

Chipkantenlänge (y-Richtung)Length of chip edge (y-direction)

L

y

0.28

0.30

0.32

mm

Durchmesser des WafersDiameter of the wafer

D

76.2

mm

ChiphöheDie height

H

165

185

205

µm

BondpaddurchmesserDiameter of bondpad

d

135

µm

Weitere InformationenAdditional information

2)

VorderseitenmetallisierungMetallization frontside

AluminiumAluminum

RückseitenmetallisierungMetallization backside

GoldlegierungGold alloy

TrennverfahrenDicing

SägenSawing

Verbindung Chip - TrägerDie bonding

KlebenEpoxy bonding

1)

Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.This is not a specified value

2)

All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspectionA63501-Q0013-N001-*-76G3:The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.Thevisual inspection of chip backside is performed by eye for 100% of the area of each wafer. If decisions (good/bad) arenot possible additional a stereo microscope with incident light with 40x-80x magnification is used. Areas greater than¼ cm² which have an amount of more than 3% failed dies will be marked manually with pen. The marked area frombackside will be transfered to frontside and will be also marked manually with pen. The visual inspection of chipfrontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area ofeach wafer. Areas greater than 1 cm² which have an amount of more than 50% failed dies and areas greater than 2cm² which have an amount of more than 25% failed dies will be marked. The quality inspection (final visual inspection)is performed by production. An additional visual inspection step as special release procedure by QM after the finalvisual inspection is not installed.