Mitsubishi 6.5 KV SiC Module Achieves Highest Power Density

Wednesday 31st January 2018

Will lead to smaller, more efficient power equipment for railcars and electric power systems

Mitsubishi Electric has developed a 6.5 kV full SiC power semiconductor module that is believed to offer the world’s highest power density (calculated from rated voltage and current) among power semiconductor modules rated from 1.7 kV to 6.5 kV.

The unprecedented power density is made possible by the model’s original structure with integrated MOSFET and diode on single chip and its newly developed package.

Mitsubishi Electric expects the module to lead to smaller and more energy-efficient power equipment for high-voltage railcars and electric power systems. Going forward, the company will continue to further develop the technology and conduct further reliability tests.

Conventional power semiconductor modules use two separate semiconductor chips, one with a MOSFET and the other with a diode. Mitsubishi Electric has integrated the diode in the MOSFET chip to drastically reduce the power module’s footprint.

In addition, a new insulating substrate capable of high thermal conductivity and high heat tolerance has been adopted, the result of a cooperative effort involving four material manufacturers. Bonding with the insulating substrate is achieved with Mitsubishi Electric’s own reliable technology.

Mitsubishi Electric’s development of a 6.5 kV full-SiC power module has been supported by a project that is subsidised by the New Energy and Industrial Technology Development Organization (NEDO).

Patents Pending patents for the technology announced in this news release number nine in Japan and three outside of Japan.

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