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Abstract:

Embodiments provided herein describe systems and methods for aligning
sputtering sources, such as in a substrate processing tool. The substrate
processing tool includes at least one sputtering source and a device.
Each of sputtering sources includes a target having a central axis. The
device has an axis and is detachably coupled to the at least one
sputtering source. The device indicates to a user a direction in which
the central axis of the target of the at least one sputtering source is
oriented.

Claims:

1. A substrate processing tool comprising: a plurality of sputtering
sources, each of the plurality of sputtering sources comprising a target,
wherein each target has a central axis perpendicular to a plane of the
target; and a device having a central axis and an indicator aligned with
the central axis of the device, wherein the indicator of the device is
aligned with the central axis of the target of the sputtering source when
the device is coupled to one of the plurality of sputtering sources.

2. The substrate processing tool of claim 1, wherein the device comprises
an electromagnetic radiation source configured to emit electromagnetic
radiation along the central axis of the device.

3. The substrate processing tool of claim 2, wherein the electromagnetic
radiation source is a laser.

4. The substrate processing tool of claim 1, further comprising: a
housing defining a processing chamber, wherein the plurality of
sputtering sources are coupled to the housing and positioned within the
processing chamber; and a substrate support coupled to the housing and
configured to support a substrate within the processing chamber.

5. The substrate processing tool of claim 4, wherein the plurality of
sputtering sources are coupled to the housing such that the respective
directions in which the central axis of each of the targets are
adjustable.

6. The substrate processing tool of claim 5, wherein the plurality of
sputtering sources are coupled to the housing such that respective
distances between each of the plurality of sputtering sources and the
substrate support are adjustable.

7. A method comprising: providing a plurality of sputtering sources
positioned within a processing chamber, each of the plurality of
sputtering sources comprising a target, wherein each target has a central
axis perpendicular to a plane of the target; attaching a device to a
first of the plurality of sputtering sources, the device having a central
axis and an indicator aligned with the central axis of the device,
wherein the indicator of the device is aligned with the central axis of
the target of the first of the plurality of sputtering sources when the
device is attached to the first of the plurality of sputtering sources;
determining a direction in which the central axis of the target of the
first of the plurality of sputtering sources is oriented using the
device; attaching the device to a second of the plurality of sputtering
sources, wherein the indicator of the device is aligned with the central
axis of the target of the second of the plurality of sputtering sources
when the device is attached to the second of the plurality of sputtering
sources; and determining a direction in which the central axis of the
target of the second of the plurality of sputtering sources is oriented
using the device.

8. The method of claim 7, wherein the device comprises an electromagnetic
radiation source configured to emit electromagnetic radiation along the
central axis of the device.

9. The method of claim 8, wherein the electromagnetic radiation source is
a laser.

10. The method of claim 7, wherein the substrate processing tool further
comprises: a housing defining the processing chamber, wherein the
plurality of sputtering sources are coupled to the housing; and a
substrate support coupled to the housing and configured to support a
substrate within the processing chamber.

11. The method of claim 10, wherein the plurality of sputtering sources
are coupled to the housing such that the respective directions in which
the central axis of each of the targets are adjustable and respective
distances between each of the first sputtering sources and the substrate
support are adjustable.

12. The method of claim 10, further comprising: moving the first of the
plurality of sputtering sources relative to the housing to adjust the
direction in which the central axis of the target of the first of the
plurality of sputtering sources is oriented; and detaching the device
from the first of the plurality of sputtering sources.

13. The method of claim 12, further comprising: attaching the device to a
second of the plurality of sputtering sources moving the second of the
plurality of sputtering sources relative to the housing to adjust the
direction in which the central axis of the target of the second of the
plurality of sputtering sources is oriented; and detaching the device
from the second of the plurality of sputtering sources.

14. The method of claim 12, further comprising sputtering particles from
the target of the first of the plurality of sputtering sources such that
the particles are deposited on the substrate.

15. A substrate processing tool comprising: a housing defining a
processing chamber; a substrate support coupled to the housing and
configured to support a substrate within the processing chamber; a
plurality of sputtering sources coupled to the housing and positioned
within the processing chamber above the substrate support, each of the
plurality of sputtering sources comprising a target, wherein each target
has a central axis perpendicular to a plane of the target; and a device
having a central axis and an indicator aligned with the central axis of
the device, wherein the indicator of the device is aligned with the
central axis of the target of the respective sputtering source when the
device is coupled to one of the plurality of sputtering sources.

16. The substrate processing tool of claim 15, wherein the device
comprises an electromagnetic radiation source configured to emit
electromagnetic radiation along the central axis of the device.

17. The substrate processing tool of claim 16, wherein the
electromagnetic radiation source is a laser.

18. The substrate processing tool of claim 17, wherein the plurality of
sputtering sources are coupled to the housing such that the respective
directions in which the central axis of each of the targets are
adjustable.

19. The substrate processing tool of claim 18, wherein the plurality of
sputtering sources are coupled to the housing such that respective
distances between each of the plurality of sputtering sources and the
substrate support are adjustable.

20. The substrate processing tool of claim 15, wherein the device is
configured to be detachably coupled to each of the plurality of
sputtering sources.

Description:

[0001] The present invention relates to substrate processing. More
particularly, this invention relates to systems and methods for aligning
sputtering sources used to deposit materials on substrates.

BACKGROUND OF THE INVENTION

[0002] Physical vapor deposition (PVD) processes, such as sputtering,
involve depositing materials onto a substrate by ejecting material from a
target (or sputtering) source that includes the materials to be
deposited. When PVD processes are used to form thin films, such as in
semiconductor processing, the quality and uniformity of the thin films
may be compromised if the target sources are not properly aligned (or
oriented) relative to the substrate. The optimal alignment of the target
sources may depend on the particular PVD processes being used, as well as
the materials being deposited.

[0003] Conventional methods for target source alignment involve the use of
digital levelers to estimate and appropriately adjust the alignment of
the target sources. Such methods are time consuming and sometimes result
in improper alignment.

BRIEF DESCRIPTION OF THE DRAWINGS

[0004] Various embodiments of the invention are disclosed in the following
detailed description and the accompanying drawings:

[0005] FIG. 1 is an isometric view of a sputtering source and an alignment
device according to one embodiment of the present invention;

[0006]FIG. 2 is an isometric view of the sputtering source and the
alignment device of FIG. 1, illustrating the alignment device being
attached to the sputtering source;

[0007]FIG. 3 is a cross-sectional view of the sputtering source and the
alignment device taken along line 3-3 in FIG. 2;

[0008] FIGS. 4-6 are simplified cross-sectional views of a physical vapor
deposition (PVD) tool, illustrating a method for aligning sputtering
sources according to one embodiment of the present invention;

[0009] FIG. 7 is a schematic diagram of a combinatorial processing and
evaluation technique; and

[0010]FIG. 8 is a simplified schematic diagram illustrating a general
methodology for combinatorial process sequence integration.

DETAILED DESCRIPTION

[0011] A detailed description of one or more embodiments is provided below
along with accompanying figures. The detailed description is provided in
connection with such embodiments, but is not limited to any particular
example. The scope is limited only by the claims and numerous
alternatives, modifications, and equivalents are encompassed. Numerous
specific details are set forth in the following description in order to
provide a thorough understanding. These details are provided for the
purpose of example and the described techniques may be practiced
according to the claims without some or all of these specific details.
For the purpose of clarity, technical material that is known in the
technical fields related to the embodiments has not been described in
detail to avoid unnecessarily obscuring the description.

[0012] Embodiments described herein provide systems (and/or methods) for
indicating the direction a sputtering source (or a target or gun) is
pointing or facing. More particularly, the system allows a user to easily
determine, and perhaps adjust, the direction in which the central axis of
the sputtering source is oriented. This is accomplished by temporarily
attaching an alignment, or pointing, device to the sputtering source. The
alignment device provides an indication of a direction in which the
central axis of the sputtering source (or a target of the sputtering
source) is oriented.

[0013] In one embodiment, a substrate processing tool (e.g., a physical
vapor deposition (PVD) tool) is provided that includes a sputtering
source having a target and an alignment device that is detachably coupled
to the sputtering source. The alignment device indicates to a user a
direction in which the central axis of the target of the sputtering
source is oriented.

[0014] The alignment device may indicate an alignment axis extending from
the target of the sputtering source, which may be parallel, or even
congruent with, the central axis of the target. The alignment device may
include an electromagnetic radiation source, such as a laser, which is
configured to emit electromagnetic radiation along the alignment axis. In
other embodiments, the alignment device may simply include an elongate
member that extends from the sputtering source in such a way to indicate
the direction the sputtering source is facing.

[0015] The alignment device allows the user to easily determine how the
sputtering source is aligned relative to, for example, a substrate or an
aperture above a substrate. In some embodiments, the angular orientation
and the position (e.g., height) of the sputtering source are adjustable.
As such, the user may use the alignment device to adjust the position and
orientation of the sputtering source as desired (e.g., depending on the
sputtering process). The pointing device may be used in systems having a
single sputtering source, as well as those having multiple sputtering
sources, such as "combinatorial" systems.

[0016] FIGS. 1-3 illustrate a sputtering source 110 for a substrate
processing tool and an alignment device 112, according to one embodiment
of the present invention. The sputtering source 110 includes a mounting
joint 114, a target electrode 116, and a target 118. The mounting joint
114 is connected to a side of the target electrode 116 opposing the
target 118 and includes a mounting aperture 120 extending therethrough.
As will be described in greater detail below, the mounting joint 114 may
be used to secure the sputtering source 110 within a processing chamber
of a substrate processing tool such that the angular orientation of the
sputtering source 110 may be adjusted.

[0017] The target 118 is secured to the target electrode 116 and includes
a material (e.g., silver, nickel, chromium, etc.) to be sputtered onto a
surface of a substrate. In the depicted embodiment, target electrode 116
and the target 118 are substantially circular. However, in other
embodiments, different shapes may be used. The sputtering source 110,
specifically the target 118, may have a width, or diameter, 320 (FIG. 3)
of, for example, approximately 5 centimeters (cm). However, as described
below, in other embodiments, the sputtering source 110 may have different
sizes. Additionally, the target 118 has a central axis 122 extending
through a central portion thereof, which is perpendicular to a surface
124 opposing the target electrode 118.

[0018] Still referring to FIGS. 1-3, the alignment device 12 includes a
body 126 and an alignment (or pointing) mechanism 128. In the depicted
embodiment, the body 126 is substantially circular and has a concave back
side 230 and a convex front side 232. Referring specifically to FIG. 3,
the body 126 is shaped to have a series of concentric "tiers" 334, 336,
and 338, with varying widths or diameters, on the back side 230 and a
flange 340 on the front side 232, adjacent to tier 338. As shown in FIG.
3, each of the tiers 334, 336, and 338 and the flange 340 include a
fastener opening 342 extending therethrough.

[0019] The alignment mechanism 128 is inserted into the flange 340 and
secured in place with a fastener 344 (e.g., a screw) extending through
the fastener opening 342 of the flange 340. In one embodiment, the
alignment mechanism 128 is an electromagnetic radiation source, such as a
laser. In such an embodiment, when activated, the electromagnetic
radiation source emits electromagnetic radiation along an alignment axis
146, which extends through a central portion of the body 126 of the
alignment device 112 and is concentric with the tiers 334, 336, and 338.
Although not shown, in other embodiments, the alignment mechanism 128 may
include an elongate member (e.g., a "pointer") extending from the body
126 of the alignment device 112 along the alignment axis 146.

[0020] Referring specifically to FIGS. 2 and 3, the alignment device 112
is detachably connected to the sputtering source 110 in such a way that
the central axis 122 of the target 118 and the alignment axis 146 of the
alignment device 112 are parallel. In the particular embodiment shown,
the central axis 122 of the target 118 and the alignment axis 146 of the
alignment device 112 are congruent. More particularly, the sputtering
source 110 is inserted into the back side 230 of the body 126 of the
alignment device 112 such that the target 118 mates with tier 338. That
is, tier 338 is sized and shaped to fit the particular target 118 (e.g.,
5 cm diameter) shown.

[0021] However, it should be understood that the alignment device 112 may
also be used with targets of different sizes, as provided by tiers 334
and 336. For example, tier 334 may be sized to fit, for example, a target
with a diameter of 20 cm, and tier 336 may be sized to fit, for example,
a target with a diameter of 10 cm.

[0022] In the depicted embodiment, the body 126 of the alignment device
112 is secured to the sputtering source 110 with a fastener 346 (e.g., a
screw) extending through the fastener opening 342 through tier 338 of the
body 126, which contacts the target 118. As such, the alignment device
112 may be removed from the sputtering source 110 by loosening the faster
346.

[0023] Thus, when the alignment device 112 is attached to the sputtering
source 110, the alignment mechanism 128 provides an indication of the
angular orientation of the target 118 to a user. More specifically, the
alignment mechanism 128 indicates a direction in which the central axis
122 of the target 118 is oriented. As is described below, this indication
may be used to adjust the angular orientation (and/or position) of the
sputtering source 110 as appropriate given particular processing
conditions.

[0024] FIGS. 4-6 illustrate a substrate processing tool 400 and a method
for aligning sputtering sources within the substrate processing tool 400,
according to one embodiment of the present invention. The substrate
processing tool 400 may be a PVD tool, as is commonly understood. The
substrate processing tool 400 includes a housing 402 that defines, or
encloses, a processing chamber 404, a substrate support 406, a first
sputtering source 408, and a second sputtering source 410.

[0025] The housing 402 includes a gas inlet 412 and a gas outlet 414 near
a lower region thereof on opposing sides of the substrate support 406.
The substrate support 406 is positioned near the lower region of the
housing 402 and in configured to support a substrate 416. The substrate
416 may be, for example, a round semiconductor (e.g., silicon) substrate,
or a glass (e.g., borosilicate glass) substrate, having a diameter of,
for example, 200 mm or 300 mm. In other embodiments (such as in a
manufacturing environment), the substrate 416 may have other shapes, such
as square or rectangular, and may be significantly larger (e.g., 0.5-6 m
across), particularly when the substrate 416 is glass. The substrate
support 406 includes a support electrode 418 and is held at ground
potential during processing, as indicated.

[0026] The first and second sputtering sources 408 and 410 are suspended
from an upper region of the housing 402 within the processing chamber
404. The first and second sputtering sources 408 and 410 may be similar
to sputtering source 10 described above. Thus, the first sputtering
source 408 includes a first target 420 and a first target electrode 422,
and the second sputtering source 410 includes a second target 424 and a
second target electrode 426.

[0027] The first and second sputtering sources 408 and 410 are coupled to
the housing 402 such that the angular orientation thereof may me adjusted
by a user (e.g., via mounting joint 14 in FIG. 1). Additionally, the
sputtering sources 408 and 410 may be coupled to the housing 402 such
that their position within the processing chamber 404 (e.g., the distance
between the sputtering sources 408 and 410 and the substrate 416) may be
adjusted.

[0028] The materials used in the targets 420 and 424 may, for example,
include tin, zinc, antimony, silicon, strontium, titanium, niobium,
zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, bismuth,
silicon, silver, nickel, chromium, or any combination thereof (i.e., a
single target may be made of an alloy of several metals). Additionally,
the materials used in the targets may include oxygen, nitrogen, or a
combination of oxygen and nitrogen in order to form the oxides, nitrides,
and oxynitrides. Additionally, although only two sputtering sources 408
and 410 (and targets 420 and 224) are shown in the depicted embodiment,
additional sputtering sources (and targets) may be used.

[0029] Still referring to FIG. 4, the substrate processing tool 400 also
includes a first power supply 430 coupled to the first target electrode
422 and a second power supply 432 coupled to the second target electrode
424. As is commonly understood, the power supplies 430 and 432 pulse
direct current (DC) power to the respective electrodes, causing material
to be, at least in some embodiments, simultaneously sputtered (i.e.,
co-sputtered) from the first and second targets 420 and 424.

[0030] During sputtering, inert gases, such as argon or krypton, may be
introduced into the processing chamber 404 through the gas inlet 412,
while a vacuum is applied to the gas outlet 414. However, in embodiments
in which reactive sputtering is used, reactive gases may also be
introduced, such as oxygen and/or nitrogen, which interact with particles
ejected from the targets (i.e., to form oxides, nitrides, and/or
oxynitrides).

[0031] Although not shown in FIGS. 4-6, the PVD tool 400 may also include
a control system having, for example, a processor and a memory, which is
in operable communication with the other components shown in FIG. 4-6 and
configured to control the operation thereof in order to perform the
methods described herein.

[0032] As shown in FIG. 4, the first sputtering source 408 is initially
oriented such that a central axis 434 of the first target 420 intersects
the substrate support 406 to the left (as viewed in FIG. 4) of the
substrate 416. Similarly, the second sputtering source 410 is initially
oriented such that a central axis 436 of the second target 424 intersects
the substrate support 406 to the left of the substrate 436.

[0033] Referring to FIG. 5, an alignment device 438 (e.g., the alignment
device 12 described above) is then attached to the first sputtering
source 408 in, for example, a manner similar to that described above such
that the alignment mechanism 440 (e.g., a laser) emits electromagnetic
radiation along the alignment axis 442, which is congruent with the
central axis 434 (FIG. 4) of the first target 420.

[0034] Thus, a user may easily determine the orientation of the first
sputtering source 408 by locating the illumination caused by the laser.
In the example shown, when the alignment device 438 is initially attached
to the first sputtering source 408, the illumination caused by the laser
is a spot on the substrate support 416 to the left of the substrate 416.
However, as shown, the user may then (e.g., manually) rotate the first
sputtering source 408 so that the illumination is moved, for example,
onto a central portion of the substrate 416, thus directing the central
axis 434 of the first target 420 towards the central portion of the
substrate 416.

[0035] In this manner, the user is able to easily determine, and adjust,
the orientation of the first target 420. As a result, the overall quality
and uniformity of the layers formed on the substrate 416 may be improved.

[0036] Although not specifically shown, the alignment device 438 may then
be removed from the first sputtering source 408 and attached to the
second sputtering source 410. The second sputtering source 410 may then
be similarly aligned.

[0037]FIG. 6 illustrates the substrate processing tool 400 after the
first sputtering source 408 and the second sputtering source 410 have
been aligned. As shown, the central axis 434 of the first target 420 and
the central axis 436 of the second target 424 are both directed towards
the central portion of the substrate 416.

[0038] Although in the embodiment shown in FIGS. 4-6 the sputtering
sources 408 and 410 (and the targets 420 and 424) are adjusted such that
the central axes 434 and 436 of the respective targets 420 and 424 are
directed at the central portion of the substrate 416, it should be
understood that in other embodiments may be intentionally aligned in
other ways. For example, the sputtering sources 408 and 410 may be
adjusted such that the central axes 434 and 436 are directed towards
edges of the substrate 416. As will be appreciated by one skilled in the
art, the optimal alignment of the sputtering sources 408 and 410 may vary
depending on the particular processing being used, as well as the
materials being sputtered from the targets 420 and 424.

[0039] Additionally, although the PVD tool 400 shown in FIGS. 4-6 includes
a stationary substrate support 406, it should be understood that in a
manufacturing environment, the substrate 416 may be in motion during the
deposition process.

[0040] Furthermore, in other embodiments, the alignment devices described
herein may be used is substrate processing tools configured to perform
"combinatorial" processing, in which variations in the materials
deposited on the substrate may be intentionally created for experimental
purposes. In such an embodiment, the substrate processing tool may
include an aperture positioned above the substrate to isolate particular
regions of the substrate, and the alignment of the sputtering sources
described herein may be in relation to the aperture, as opposed to the
substrate itself.

[0041] The manufacture of semiconductor devices, thin film photovoltaic
(TFPV) devices, optoelectronic devices, etc (herein collectively referred
to as "device" or "devices") entails the integration and sequencing of
many unit processing steps. As an example, manufacturing typically
includes a series of processing steps such as cleaning, surface
preparation, deposition, patterning, etching, thermal annealing, and
other related unit processing steps. The precise sequencing and
integration of the unit processing steps enables the formation of
functional devices meeting desired performance metrics such as
efficiency, power production, and reliability.

[0042] As part of the discovery, optimization and qualification of each
unit process, it is desirable to be able to i) test different materials,
ii) test different processing conditions within each unit process module,
iii) test different sequencing and integration of processing modules
within an integrated processing tool, iv) test different sequencing of
processing tools in executing different process sequence integration
flows, and combinations thereof in the manufacture of devices such as
integrated circuits. In particular, there is a need to be able to test i)
more than one material, ii) more than one processing condition, iii) more
than one sequence of processing conditions, iv) more than one process
sequence integration flow, and combinations thereof, collectively known
as "combinatorial process sequence integration", on a single monolithic
substrate without the need of consuming the equivalent number of
monolithic substrates per material(s), processing condition(s),
sequence(s) of processing conditions, sequence(s) of processes, and
combinations thereof. This can greatly improve both the speed and reduce
the costs associated with the discovery, implementation, optimization,
and qualification of material(s), process(es), and process integration
sequence(s) required for manufacturing.

[0043] Systems and methods for High Productivity Combinatorial (HPC)
processing are described in U.S. Pat. No. 7,544,574 filed on Feb. 10,
2006, U.S. Pat. No. 7,824,935 filed on Jul. 2, 2008, U.S. Pat. No.
7,871,928 filed on May 4, 2009, U.S. Pat. No. 7,902,063 filed on Feb. 10,
2006, and U.S. Pat. No. 7,947,531 filed on Aug. 28, 2009, which are all
herein incorporated by reference. Systems and methods for HPC processing
are further described in U.S. patent application Ser. No. 11/352,077
filed on Feb. 10, 2006, claiming priority from Oct. 15, 2005, U.S. patent
application Ser. No. 11/419,174 filed on May 18, 2006, claiming priority
from Oct. 15, 2005, U.S. patent application Ser. No. 11/674,132 filed on
Feb. 12, 2007, claiming priority from Oct. 15, 2005, and U.S. patent
application Ser. No. 11/674,137 filed on Feb. 12, 2007, claiming priority
from Oct. 15, 2005 which are all herein incorporated by reference.

[0044] HPC processing techniques have been successfully adapted to wet
chemical processing such as etching and cleaning. HPC processing
techniques have also been successfully adapted to deposition processes
such as physical vapor deposition (PVD), atomic layer deposition (ALD),
and chemical vapor deposition (CVD).

[0045] FIG. 7 illustrates a schematic diagram, 700, for implementing
combinatorial processing and evaluation using primary, secondary, and
tertiary screening. The schematic diagram, 700, illustrates that the
relative number of combinatorial processes run with a group of substrates
decreases as certain materials and/or processes are selected. Generally,
combinatorial processing includes performing a large number of processes
during a primary screen, selecting promising candidates from those
processes, performing the selected processing during a secondary screen,
selecting promising candidates from the secondary screen for a tertiary
screen, and so on. In addition, feedback from later stages to earlier
stages can be used to refine the success criteria and provide better
screening results.

[0046] For example, thousands of materials are evaluated during a
materials discovery stage, 702. Materials discovery stage, 702, is also
known as a primary screening stage performed using primary screening
techniques. Primary screening techniques may include dividing substrates
into coupons and depositing materials using varied processes. The
materials are then evaluated, and promising candidates are advanced to
the secondary screen, or materials and process development stage, 704.
Evaluation of the materials is performed using metrology tools such as
electronic testers and imaging tools (i.e., microscopes).

[0047] The materials and process development stage, 704, may evaluate
hundreds of materials (i.e., a magnitude smaller than the primary stage)
and may focus on the processes used to deposit or develop those
materials. Promising materials and processes are again selected, and
advanced to the tertiary screen or process integration stage, 706, where
tens of materials and/or processes and combinations are evaluated. The
tertiary screen or process integration stage, 706, may focus on
integrating the selected processes and materials with other processes and
materials.

[0048] The most promising materials and processes from the tertiary screen
are advanced to device qualification, 708. In device qualification, the
materials and processes selected are evaluated for high volume
manufacturing, which normally is conducted on full substrates within
production tools, but need not be conducted in such a manner. The results
are evaluated to determine the efficacy of the selected materials and
processes. If successful, the use of the screened materials and processes
can proceed to pilot manufacturing, 710.

[0049] The schematic diagram, 700, is an example of various techniques
that may be used to evaluate and select materials and processes for the
development of new materials and processes. The descriptions of primary,
secondary, etc. screening and the various stages, 702-710, are arbitrary
and the stages may overlap, occur out of sequence, be described and be
performed in many other ways.

[0050] This application benefits from High Productivity Combinatorial
(HPC) techniques described in U.S. patent application Ser. No. 11/674,137
filed on Feb. 12, 2007, which is hereby incorporated for reference in its
entirety. Portions of the '137 application have been reproduced below to
enhance the understanding of the present invention. The embodiments
described herein enable the application of combinatorial techniques to
process sequence integration in order to arrive at a globally optimal
sequence of manufacturing operations by considering interaction effects
between the unit manufacturing operations, the process conditions used to
effect such unit manufacturing operations, hardware details used during
the processing, as well as materials characteristics of components
utilized within the unit manufacturing operations. Rather than only
considering a series of local optimums, i.e., where the best conditions
and materials for each manufacturing unit operation is considered in
isolation, the embodiments described below consider interactions effects
introduced due to the multitude of processing operations that are
performed and the order in which such multitude of processing operations
are performed when fabricating a device. A global optimum sequence order
is therefore derived and as part of this derivation, the unit processes,
unit process parameters and materials used in the unit process operations
of the optimum sequence order are also considered.

[0051] The embodiments described further analyze a portion or sub-set of
the overall process sequence used to manufacture a device. Once the
subset of the process sequence is identified for analysis, combinatorial
process sequence integration testing is performed to optimize the
materials, unit processes, hardware details, and process sequence used to
build that portion of the device or structure. During the processing of
some embodiments described herein, structures are formed on the processed
substrate that are equivalent to the structures formed during actual
production of the device. For example, such structures may include, but
would not be limited to, contact layers, buffer layers, absorber layers,
or any other series of layers or unit processes that create an
intermediate structure found on devices. While the combinatorial
processing varies certain materials, unit processes, hardware details, or
process sequences, the composition or thickness of the layers or
structures or the action of the unit process, such as cleaning, surface
preparation, deposition, surface treatment, etc. is substantially uniform
through each discrete region. Furthermore, while different materials or
unit processes may be used for corresponding layers or steps in the
formation of a structure in different regions of the substrate during the
combinatorial processing, the application of each layer or use of a given
unit process is substantially consistent or uniform throughout the
different regions in which it is intentionally applied. Thus, the
processing is uniform within a region (inter-region uniformity) and
between regions (intra-region uniformity), as desired. It should be noted
that the process can be varied between regions, for example, where a
thickness of a layer is varied or a material may be varied between the
regions, etc., as desired by the design of the experiment.

[0052] The result is a series of regions on the substrate that contain
structures or unit process sequences that have been uniformly applied
within that region and, as applicable, across different regions. This
process uniformity allows comparison of the properties within and across
the different regions such that the variations in test results are due to
the varied parameter (e.g., materials, unit processes, unit process
parameters, hardware details, or process sequences) and not the lack of
process uniformity. In the embodiments described herein, the positions of
the discrete regions on the substrate can be defined as needed, but are
preferably systematized for ease of tooling and design of
experimentation. In addition, the number, variants and location of
structures within each region are designed to enable valid statistical
analysis of the test results within each region and across regions to be
performed.

[0053]FIG. 8 is a simplified schematic diagram illustrating a general
methodology for combinatorial process sequence integration that includes
site isolated processing and/or conventional processing in accordance
with one embodiment of the invention. In one embodiment, the substrate is
initially processed using conventional process N. In one exemplary
embodiment, the substrate is then processed using site isolated process
N+1. During site isolated processing, an HPC module may be used, such as
the HPC module described in U.S. patent application Ser. No. 11/352,077
filed on Feb. 10, 2006. The substrate can then be processed using site
isolated process N+2, and thereafter processed using conventional process
N+3. Testing is performed and the results are evaluated. The testing can
include physical, chemical, acoustic, magnetic, electrical, optical, etc.
tests. From this evaluation, a particular process from the various site
isolated processes (e.g. from steps N+1 and N+2) may be selected and
fixed so that additional combinatorial process sequence integration may
be performed using site isolated processing for either process N or N+3.
For example, a next process sequence can include processing the substrate
using site isolated process N, conventional processing for processes N+1,
N+2, and N+3, with testing performed thereafter.

[0054] It should be appreciated that various other combinations of
conventional and combinatorial processes can be included in the
processing sequence with regard to FIG. 2. That is, the combinatorial
process sequence integration can be applied to any desired segments
and/or portions of an overall process flow. Characterization, including
physical, chemical, acoustic, magnetic, electrical, optical, etc.
testing, can be performed after each process operation, and/or series of
process operations within the process flow as desired. The feedback
provided by the testing is used to select certain materials, processes,
process conditions, and process sequences and eliminate others.
Furthermore, the above flows can be applied to entire monolithic
substrates, or portions of monolithic substrates such as coupons.

[0055] Under combinatorial processing operations the processing conditions
at different regions can be controlled independently. Consequently,
process material amounts, reactant species, processing temperatures,
processing times, processing pressures, processing flow rates, processing
powers, processing reagent compositions, the rates at which the reactions
are quenched, deposition order of process materials, process sequence
steps, hardware details, etc., can be varied from region to region on the
substrate. Thus, for example, when exploring materials, a processing
material delivered to a first and second region can be the same or
different. If the processing material delivered to the first region is
the same as the processing material delivered to the second region, this
processing material can be offered to the first and second regions on the
substrate at different concentrations. In addition, the material can be
deposited under different processing parameters. Parameters which can be
varied include, but are not limited to, process material amounts,
reactant species, processing temperatures, processing times, processing
pressures, processing flow rates, processing powers, processing reagent
compositions, the rates at which the reactions are quenched, atmospheres
in which the processes are conducted, an order in which materials are
deposited, hardware details of the gas distribution assembly, etc. It
should be appreciated that these process parameters are exemplary and not
meant to be an exhaustive list as other process parameters commonly used
in manufacturing may be varied.

[0056] Thus, in one embodiment, a substrate processing tool is provided.
The substrate processing tool includes a plurality of sputtering sources.
Each of the plurality of sputtering sources includes a target. Each
target has a central axis perpendicular to a plane of the target. A
device has a central axis and an indicator aligned with the central axis
of the device. The indicator of the device is aligned with the central
axis of the target of the sputtering source when the device is coupled to
one of the plurality of sputtering sources.

[0057] In another embodiment, a method is provided. A plurality of
sputtering sources positioned within a processing chamber are provided.
Each of the plurality of sputtering sources includes a target. Each
target has a central axis perpendicular to a plane of the target. A
device is attached to a first of the plurality of sputtering sources. The
device has a central axis and an indicator aligned with the central axis
of the device. The indicator of the device is aligned with the central
axis of the target of the first of the plurality of sputtering sources
when the device is attached to the first of the plurality of sputtering
sources. A direction in which the central axis of the target of the first
of the plurality of sputtering sources is oriented is determined using
the device. The device is attached to a second of the plurality of
sputtering sources. The indicator of the device is aligned with the
central axis of the target of the second of the plurality of sputtering
sources when the device is attached to the second of the plurality of
sputtering sources. A direction in which the central axis of the target
of the second of the plurality of sputtering sources is oriented is
determined using the device.

[0058] In a further embodiment, a substrate processing tool is provided.
The substrate processing tool includes a housing defining a processing
chamber, a substrate support coupled to the housing and configured to
support a substrate within the processing chamber, a plurality of
sputtering sources coupled to the housing and positioned within the
processing chamber above the substrate support. Each of the plurality of
sputtering sources includes a target. Each target has a central axis
perpendicular to a plane of the target. A device has a central axis and
an indicator aligned with the central axis of the device. The indicator
of the device is aligned with the central axis of the target of the
respective sputtering source when the device is coupled to one of the
plurality of sputtering sources.

[0059] Although the foregoing examples have been described in some detail
for purposes of clarity of understanding, the invention is not limited to
the details provided. There are many alternative ways of implementing the
invention. The disclosed examples are illustrative and not restrictive.

Patent applications by Danny Wang, Saratoga, CA US

Patent applications by Kent Riley Child, Dublin, CA US

Patent applications by Owen Ho Yin Fong, San Jose, CA US

Patent applications by Intermolecular, Inc.

Patent applications in class MEASURING, TESTING, OR INDICATING

Patent applications in all subclasses MEASURING, TESTING, OR INDICATING