Kurzfassung

Two types of lasers based on hydrogen-like impurity-related transitions in bulk silicon operate at frequencies between 1 and 7 THz (wavelength range of 50–230 μm). These lasers operate under mid-infrared optical pumping of n-doped silicon crystals at low temperatures (less than 30 K). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized in the first type of terahertz silicon lasers. These lasers have a gain about 1–3 cm<sup>-1</sup> above the laser thresholds (more than 1 kW/cm<sup>2</sup>) and provide 10ps – 1μs pulses with a few mW output power on discrete lines. Raman-type Stokes stimulated emission in the range 4.6–5.8 THz has been observed from silicon crystals doped by antimony and phosphorus donors when optically excited by radiation from a tunable infrared free electron laser. The scattering occurs on the 1s(E)→1s(A<sub>1</sub>) donor electronic transition accompanied by an emission of the intervalley transverse acoustic g-phonon. The Stokes lasing has a peak power of a few tenths of a mW and a pulse width of a few ns. The Raman optical gain is about 7.4 cm/GW and the optical threshold intensity is about 100 kW/cm<sup>2</sup>.

Dokumentart:

Zeitschriftenbeitrag

Titel:

Silicon donor and Stokes terahertz lasers

Autoren:

Autoren

Institution oder E-Mail-Adresse

Autoren-ORCID

Pavlov, Sergey

NICHT SPEZIFIZIERT

NICHT SPEZIFIZIERT

Hübers, Heinz-Wilhelm

NICHT SPEZIFIZIERT

NICHT SPEZIFIZIERT

Hovenier, Jacob Niels

Kavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands

NICHT SPEZIFIZIERT

Klaassen, Tjeerd Onno

Kavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands