Additional Information

Schottky Rectifier Diodes
Package: DO-214AB

Description / Additional Information

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode.

State of the art geometry features epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.