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A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corp. has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers for Ka-band satellite communication terminals and point-to-point digital communication links.

The APN228 and APN229 power amplifiers were developed with the company's proprietary GaN high-electron mobility transistor (HEMT) power process and provide unmatched saturated output power of 13 and 8 watts, respectively. These second-generation power amplifiers offer the highest power density of any existing Ka-band GaN product on the market.

The broadband, two-stage amplifiers operate from 27 to 31 GHz, and, when integrated in high efficiency solid-state power amplifiers (SSPAs), allow for higher data rate in communication systems.

"GaN-based SSPAs are a far more desirable solution to costly traveling-wave tubes which require more complex, higher voltage power supplies and a lengthier production time," said Frank Kropschot, general manager, Microelectronics Products and Services, Northrop Grumman Aerospace Systems.

"APN228 and APN229 will allow our customers to reduce the cost and complexity of power-combining, and offer a significant cost advantage compared to the current generation of Ka-band products," he added.

Product descriptions:

APN228:

The APN228 is a 16.0 mm2 GaN HEMT power amplifier that operates between 27 and 31 GHz.

Samples of these MMIC power amplifiers will be available by mid-July, and packaged versions will be available for sampling later this year. Information and data sheets on the Ka-band and other GaN power amplifiers are available online at: www.northropgrumman.com/mps