Abstract:

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High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by
pulsed laser deposition on quartz glass substrates at room temperature. We varied the growth
condition in terms of oxygen pressure. The structure and electrical and optical properties of the
as-grown AZO films were mainly investigated. The AZO films formed at room temperature showed a
low electrical resistivity of 3.01×10-4 ) cm, a carrier concentration of 1.12×1021 cm-3 and a carrier
mobility of 18.59 cm2/Vs at an oxygen pressure of 10 mTorr. A visible transmittance of above 83%
was obtained. The present results suggest that optimized AZO films should be very useful and
effective for flexible display, top emission type of OLEDs and for various other kinds of
optoelectronic devices such as flexible solar cell or passive photo device.

Abstract: This study investigates the effects of damp heat stability on the optoelectronic properties of ZnO:Al (AZO) and ZnO:Ga(GZO) films with respect to thin-film solar cells. The lowest resistivities of AZO and GZO thin films are 8.2621×10-4 Ω-cm and 2.8561×10-4 Ω-cm, respectively. After damp heat testing for 999h, the resistivities of AZO and GZO thin film increase by 39.72% and 11.97%, respectively. XPS binding energy analysis shows that the AZO thin film has a higher O 1s spectrum than the GZO thin film. Thus, the carrier concentration of films decreases, as a higher binding energy is attributed to the chemisorbed oxygen atoms (O-). Experimental results show that after expousre to a damp heat test at 85°C and 85% relative humidity for electrical, optical, structural, and morphological analysis, GZO films are more stable than AZO films.

Abstract: The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Abstract: ZnO:Al (AZO) films were prepared by radio frequency (RF) magnetron sputtering at various RF power (70-200W), the electrical and optical properties of AZO films were first investigated. The films deposited at 170W and 200W had the optimum opto-electrical property and then were surface textured by a post-deposition chemical etching with 0.5% HCl for 10-30s, all these films developed a craterlike surface morphology and the crater became larger and deeper as the etching time was increased. The light scattering property of AZO films was researched by calculated spectral haze. The AZO film deposited at 170W and etched 30s had the optimal light scattering property due to its most suitable craterlike surface morphology. Introduction

Abstract: The optical and electric transport properties of the Al:ZnO(AZO) and (Cu, Al):ZnO (CAZO) films deposited by pulsed laser deposition (PLD) were investigated in this paper. The experiment found the optical band gap (OBG) of AZO films at room temperature increased from 3.378eV of ZnO to 3.446eV of ZnO:Al (2min) sample, but decreased as continue add Al to ZnO:Al (4min), which were attributes to the Burstein-Moss (B-M) effect. For CAZO films, there is obvious change about hall mobility, ν, and resistivity, ρ, after doped Cu. It can be found that the ν decreased from to and the ρ increased from to for AZO and CAZO, respectively, which is due to the scattering increasing between donor carriers and grain boundary as Cu2+ ions increase, meanwhile, it was also found the decrease of OBG, which are very help to further understand the electric transport properties and the OBG effect of AZO-based films as well as its devices potential application.