Abstract

The nonvolatile memory device with multilayernanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystalmemory device. The double layernanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layernanocrystals.

Received 04 April 2007Accepted 27 April 2007Published online 22 May 2007

Acknowledgments:

This work was performed at National Nano Device Laboratory and was supported by the National Science Council of the Republic of China under Contract Nos. NSC-95-2120-M-110-003 and NSC 95-2221-E-009-0254-MY2. Also, this work was partially supported by MOEA Technology Development for Academia Project No. 95-EC-17-A-07-S1-046 and MOE ATU Program No. 95W803.