Transparent materials such as fused silica, quartz, calcium fluoride, and fluorocarbon polymer were etched upon irradiation of organic solution containing pyrene with a conventional KrF excimer laser. Threshold fluence for etching was 240 mJ/cm2 for fused silica. Etch rate remarkably depended on a concentration of pyrene: higher etch rate with the increase of pyrene concentration. It means that pyrene molecules play an important role in this process. The etch rate can be easily controlled through changing a laser pulse number, a laser fluence and a concentration of solution. The mechanism for this process is discussed by cyclic multiphotonic absorption of pyrene in the excited states, thermal relaxation, and formation of super-heated solution. As the results, it is suggested that the process is based on the combination of two processes in the interface between the transparent materials and the liquid: one is a heating process by a super-heated liquid and the other is an attacking process by a high temperature and pressure vapor.