Abstract

This paper presents a fully integrated, four stack power amplifier for 5G wireless systems. The frequency of operation is tunable from 12 GHz to 14 GHz, with a maximum 3 dB bandwidth of 1 GHz and a maximum possible gain of 35 dB. The circuit is designed and fabricated using 45 nm CMOS SOI technology. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point under maximum bandwidth configuration are 17.7 dBm, 23.2% and 12.3 dBm, respectively, achieved at 13.7 GHz.