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Abstract:

Disclosed herein is a method of forming a p-type zinc oxide thin film. A
zinc oxide layer and an antimony oxide layer are alternately stacked one
above another on a substrate, forming a superlattice layer. The
superlattice layer is modified into a p-type zinc oxide thin film by
annealing. Upon annealing, zinc atoms of the zinc oxide layer are
diffused into the antimony oxide layer and antimony atoms of the antimony
oxide layer are diffused into the zinc oxide layer.

Claims:

1. A method of forming a p-type zinc oxide thin film, comprising: forming
a superlattice layer in which a zinc oxide layer and an antimony oxide
layer are alternately stacked; and annealing the superlattice layer to
modify the superlattice layer into a p-type zinc oxide thin film.

2. The method according to claim 1, wherein the zinc oxide layer has a
thickness greater than that of the antimony oxide layer.

3. The method according to claim 2, wherein the thickness of the zinc
oxide layer ranges from 2 nm to 4 nm.

4. The method according to claim 3, wherein the thickness of the antimony
oxide layer ranges from 0.5 nm to 2 nm.

5. The method according to claim 1, wherein the annealing is carried out
to allow zinc atoms of the zinc oxide layer to be diffused into the
antimony oxide layer and to allow antimony atoms of the antimony oxide
layer to be diffused into the zinc oxide layer.

6. The method according to claim 5, wherein the annealing is carried out
at a temperature ranging from 250.degree. C. to 550.degree. C.

7. The method according to claim 6, wherein the annealing is carried out
for 30 seconds to 5 minutes.

8. The method according to claim 1, wherein an uppermost layer of the
superlattice layer is the zinc oxide layer.

Description:

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application claims priority to Korean Patent Application No.
10-2012-0031636 filed on Mar. 28, 2012 and all the benefits accruing
therefrom under 35 U.S.C. §119, the contents of which are
incorporated by reference in their entirety.

BACKGROUND

[0002] 1. Technical Field

[0003] The present invention relates to a method of forming a zinc oxide
film, and more particularly, to a method of forming a p-type zinc oxide
film containing dopants.

[0004] 2. Description of the Related Art

[0005] Zinc oxide is a Group II-VI semiconductor having a hexagonal
Wurzite crystalline structure, which is the same as those of GaN, ZnSe,
ZnS, etc. The crystalline structure of zinc oxide has a degree of lattice
mismatch of about 1.98% relative to gallium nitride that is a major
material for light emitting diodes. Thus, ZnO has a high possibility of
application to a heterogeneous stacking structure.

[0006] Also, zinc oxide has an optical band gap of about 3.37 eV, which is
similar to the band gap of GaN amounting to 3.4 eV, so that it is
available as a near-ultraviolet light source. Further, since zinc oxide
also has relatively high defect-formation energy, it may have good
properties if manufactured into optical devices. Furthermore, zinc oxide
has a larger room-temperature exciton binding energy of 60 meV, which is
about three times higher than those of GaN and ZnSe (24 and 19 meV).
Thus, it can be expected that zinc oxide will provide highly efficient
optical gain in exciton-based optoelectronic applications.

[0007] However, in order to apply zinc oxide to light emitting diodes and
the like, deposition of a crystal thin film, implementation of a multiple
quantum-well structure, and formation of a p-type semiconductor layer are
important factors to be solved. Particularly in forming an existing
p-type ZnO thin film, a source of zinc and a source of dopants are
supplied at the same time, followed by annealing, thereby forming a
p-type thin film. Particularly, the dopants include group V elements. The
forming process may be metal organic chemical vapor deposition (MOCVD).

[0008] However, MOCVD causes poor crystallinity of zinc oxide and numerous
defects in a crystal lattice. Moreover, dopant atoms are not uniformly
distributed in the thin film, causing agglomeration or diffusion of the
dopant atoms towards the surface of the thin film.

[0009] This is also due to a high escape rate of oxygen atoms in the
crystal of ZnO. High diffusibility of oxygen intensifies crystal defects
so that dopant atoms to be combined with oxygen are not uniformly
distributed in the crystal structure.

[0010] Particularly, when the p-type ZnO thin film is formed using
antimony as a dopant, a conventional MOCVD process is used.

[0011] FIG. 1 shows an image of a p-type zinc oxide thin film formed by a
conventional MOCVD process.

[0012] Referring to FIG. 1, diethyl zinc (DEZn) and trimethyl antimony
(TMSb) were used as precursors of zinc and antimony, respectively. In
addition, a growing temperature is set to 600° C. while oxygen gas
is supplied.

[0013] Antimony atoms are not crystallized due to low melting point, but
can be easily evaporated. In addition, the interior of the film is
agglomerated with ZnO and the outer surface of the film is formed of
Sb-doped ZnO. This is caused by a phenomenon that antimony atoms are
concentrated on the outer surface of the film due to diffusion of
antimony. However, the p-type ZnO thin film having this structure has
problems of insufficient carrier concentration and higher resistance.
Thus, it is impossible to dope antimony in practice.

BRIEF SUMMARY

[0014] Therefore, the present invention is aimed at providing a method of
forming a p-type zinc oxide thin film using a superlattice.

[0015] In accordance with one aspect of the present, a method of forming a
p-type zinc oxide thin film includes: forming a superlattice layer in
which a zinc oxide layer and an antimony oxide layer are alternately
stacked; and annealing the superlattice layer to modify the superlattice
layer into a p-type zinc oxide thin film.

[0016] According to the present invention, the superlattice layer is
formed using the zinc oxide layer and the antimony oxide. The
superlattice layer is formed into a p-type zinc oxide thin film through
annealing. This structure is obtained by diffusion of zinc atoms and
antimony atoms during annealing. Thus, antimony atoms are diffused
towards zinc oxide layers, thereby preventing deterioration of
characteristics of the p-type thin film.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other aspects, features, and advantages of the
present invention will become apparent from the detailed description of
the following embodiments in conjunction with the accompanying drawings,
in which:

[0018] FIG. 1 is an image of a p-type zinc oxide thin film formed using
MOCVD in the art;

[0019] FIGS. 2 and 3 are cross-sectional views explaining a method of
forming a p-type zinc oxide thin film according to one exemplary of the
present invention;

[0020] FIG. 4 is a timing diagram explaining growth of a zinc oxide layer
and an antimony oxide layer formed in one example of the present
invention; and

[0021] FIG. 5 is an image of a p-type zinc oxide layer prepared in one
example of the present invention.

DETAILED DESCRIPTION

[0022] Exemplary embodiments of the present invention will now be
described in detail with reference to the accompanying drawings. However,
it should be understood that the present invention is not limited to the
following embodiments and may be embodied in different ways by those
skilled in the art without departing from the scope of the present
invention. Further, it should be understood that various modifications,
substitutions, and equivalent embodiments may be made by those skilled in
the art without departing from the spirit and scope of the present
invention. The same components will be denoted by the same reference
numerals throughout the drawings.

[0023] Unless otherwise defined herein, all terms including technical or
scientific terms used herein have the same meanings as commonly
understood by those skilled in the art to which the present invention
belongs. It will be further understood that terms, such as those defined
in commonly used dictionaries, should be interpreted as having a meaning
that is consistent with their meaning in the context of the specification
and relevant art and should not be interpreted in an idealized or overly
formal sense unless expressly so defined herein.

[0024] Next, exemplary embodiments of the present invention will be
described in detail with reference to the accompanying drawings.

[0025] FIGS. 2 and 3 are cross-sectional views explaining a method of
forming a p-type zinc oxide thin film according to one exemplary of the
present invention.

[0026] Referring to FIG. 2, a superlattice layer 200 is formed on a
substrate 100.

[0027] The substrate 100 may include sapphire, zinc oxide, quartz, glass,
or gallium nitride. The substrate 100 is formed through preparation and
cutting of an ingot. The substrate may be a physical substrate for
inducing growth of a membrane, or otherwise, a different functional
membrane formed on a specific substrate. For example, the functional
membrane may be a multi-quantum well layer of a light emitting diode, an
n-type semiconductor layer, or a zinc oxide film.

[0028] The superlattice layer is formed on the substrate 100 by MOCVD. The
superlattice layer includes a zinc oxide (ZnO) layer 210 and an antimony
oxide (Sb2O3) layer 220, which are alternately stacked.

[0029] To form the zinc oxide layer 210, a precursor of zinc and oxygen
are supplied into a reaction chamber. The precursor of zinc may be DEZn,
and a carrier gas may be Ar. By supplying the precursor of zinc and
oxygen gas, the zinc oxide layer 210 is formed on the substrate 100. The
ZnO layer may have a thickness ranging from 2 nm to 4 nm. If the
thickness of the ZnO layer 210 is less than 2 nm, it is difficult to form
a thin film, and to secure surface uniformity of the thin film. In
addition, if the thickness of ZnO layer 210 exceeds 4 nm, antimony atoms
cannot be uniformly distributed over the zinc oxide layer 210, even
though antimony atoms are diffused during subsequent annealing.

[0030] The antimony oxide layer 220 is formed on the zinc oxide layer 210.
The antimony oxide layer 220 is formed by MOCVD. A precursor of antimony
may be TMSb, and a carrier gas may be Ar. The antimony oxide layer 220 is
formed by supplying the precursor and oxygen. Antimony oxide has a
melting point of 656° C., which is much lower than the melting
point of zinc oxide, that is, 1975° C. Thus, the thickness of the
antimony oxide layer 220 formed by MOCVD is less than that of the zinc
oxide layer 210. That is, due to the relatively low melting point of
antimony oxide, movement of the precursor is activated in the chamber,
and a probability of precipitation or solidification of the precursor on
the substrate 100 or the zinc oxide layer 210 is lowered.

[0031] Thus, the antimony oxide layer 220 may have a thickness ranging
from 0.5 nm to 2 nm. If the thickness of the antimony oxide layer 220 is
less than 0.5 nm, there is a problem of insufficient diffusion of
antimony atoms. Further, if the thickness of the antimony oxide layer 220
is more than 2 nm, there is a problem in that considerable processing
time is needed to obtain a proper thickness of the thin film.

[0032] The zinc oxide layer 210 and the antimony oxide layer 220 are
alternately stacked one above another. For example, considering that the
zinc oxide layer 210 and the antimony oxide layer 220 are a single
grating pair, 50 to 70 grating pairs can be formed.

[0033] Further, the thickness of the zinc oxide layer 210 may be set to be
greater than that of the antimony oxide layer 220.

[0034] Referring to FIG. 3, annealing is performed on the structure shown
in FIG. 2.

[0035] The superlattice layer 200 is formed into a p-type zinc oxide thin
film 300 through annealing. Annealing may be performed at a temperature
of 250° C. to 550° C. for 30 seconds to 5 minutes.
Annealing may be rapid thermal annealing.

[0036] Antimony atoms in the antimony oxide layer are diffused into the
zinc oxide layer through annealing. Further, zinc atoms of the zinc oxide
layer are diffused into the antimony oxide layer.

[0037] If the temperature of the annealing is less than 250° C.,
diffusion of antimony atoms and zinc atoms does not smoothly occur,
causing local agglomeration of the antimony or zinc atoms. If the
temperature of the annealing exceeds 550° C., n-type conductivity
is obtained instead of p-type conductivity. This can be explained by
active movement of oxygen at high temperatures, which leads to formation
of oxygen vacancies and generation of electrons.

[0038] Further, if the heat temperature time is less than 30 seconds,
diffusion of antimony and zinc atoms is not sufficient, so that p-type
conductivity cannot be obtained. Further, if the heat temperature time is
more than 5 minutes, p-type conductivity cannot be obtained due to the
supply of excessive thermal energy.

[0039] The p-type zinc oxide thin film 300 is formed by inter-diffusion
between zinc atoms of the zinc oxide layer and antimony atoms of the
antimony oxide layer. This is because the thickness of the antimony oxide
layer is relatively smaller than that of the zinc oxide layer, so that
antimony atoms act as dopants.

[0040] As set forth above, in the method according to the present
invention, the superlattice layer comprised of the zinc oxide layer and
the antimony oxide layer is formed, and then subjected to annealing so as
to diffuse zinc and antimony atoms. As a result, the antimony atoms can
be activated as dopants. Thus, two kinds of layers having heterogeneous
configurations before annealing are formed into a single thin film
through diffusion. This means that the superlattice layer is formed into
a p-type zinc oxide thin film. Of course, according to embodiments of the
invention, the antimony oxide layer may have a higher pre-diffusion
concentration of antimony atoms in a central portion thereof than that of
zinc atoms in the central portion of the zinc oxide layer.

EXAMPLE

[0041] A substrate was first loaded into MOCVD equipment. The substrate is
a substrate which includes a zinc oxide thin film formed on a sapphire
substrate. The zinc oxide film serves as a growth factor of a zinc oxide
layer in the subsequent process. DEZn was used as a precursor of zinc,
and Ar was used as a carrier gas. The flow rate of DEZn was set to 150
sccm. The flow rate of oxygen was set to 7500 sccm. TMSb was used as a
precursor of antimony and supplied at a flow rate of 5470 nmol/min. In
the chamber, the growth pressure was set to 50 Torr, and the growth
temperature was set to 600° C. The superlattice layer was grown
for 1 hour. FIG. 4 is a timing diagram explaining growth of a zinc oxide
layer and an antimony oxide layer in one example of the present
invention.

[0042] Referring to FIG. 4, a zinc oxide layer was initially formed for 30
seconds by supplying DEZn and oxygen into the chamber. While the zinc
oxide layer was formed, supply of TMSb was interrupted. Thus, the
formation of an antimony oxide layer was restricted. After 30 seconds
elapsed, the supply of DEZn was interrupted, and TMSb and oxygen were
supplied. As a result, an antimony oxide layer was formed on the zinc
oxide layer. The supply of TMSb was carried out for 30 seconds. Then, a
zinc oxide layer was formed on the antimony oxide layer for 30 seconds.

[0043] Considering that the zinc oxide layer and the antimony oxide layer,
which were formed through the above process, form a single superlattice,
superlattices form a 60-layered superlattice layer. Here, an uppermost
layer of the superlattice layer may be a zinc oxide layer. The zinc oxide
layer facilitates the formation of a p-type zinc oxide layer through
diffusion of zinc and antimony atoms in the subsequent process.

[0044] A superlattice layer of about 700 nm thickness may be formed by the
process as described above.

[0045] Table 1 shows the effects of annealing on the superlattice layer.

[0046] Referring to Table 1, the non-annealed example showed high
resistivity and indiscernible mobility and concentration of carriers.
This means that the superlattice layer merely has a stacking structure in
which a zinc oxide layer and an antimony oxide layer are simply
repeatedly stacked one above another.

[0047] Further, when rapid thermal annealing (RTA) is carried out, it
means that a specific type of electric conductivity is obtained by
movement of antimony and zinc atoms. In Table 1, upon RTA, the annealing
temperature was increased from room temperature to a target temperature
for 3 to 4 seconds, and the target temperature was held under a nitrogen
atmosphere for 1 minute. Then, the temperature was slowly decreased
through air cooling.

[0048] The target temperature of annealing was set to 300° C.,
500° C., and 600° C. When annealing was carried out at
600° C. that is higher than a desired range, n-type conductivity
was obtained instead of p-type conductivity. It was believed that this
result was obtained because a relatively high annealing temperature
causes defects in the zinc oxide layer and oxygen is discharged from the
zinc oxide layer or antimony oxide layer.

[0049] FIG. 5 is an image of a p-type zinc oxide layer prepared in one
example of the present invention.

[0050] Referring to FIG. 5, the zinc oxide layer and the antimony oxide
layer formed in the example were annealed at 500° C. for 1 minute
under a nitrogen atmosphere.

[0051] A p-type zinc oxide thin film was formed on a sapphire substrate
which includes a zinc oxide layer thereon. The zinc oxide layer becomes a
bar or rod shape as it approaches an upper side thereof. It was believed
that such configuration of the zinc oxide layer was obtained due to the
processing temperature upon initially forming the zinc oxide layer and
the antimony oxide layer.

[0052] According to the present invention, the superlattice layer
consisting of zinc oxide layers and antimony oxide layers alternately
stacked one above another is modified into a p-type zinc oxide thin film
by annealing. In the process of annealing, zinc atoms and antimony atoms
are diffused, and the antimony atoms serve as dopants, thereby forming
the p-type zinc oxide thin film.

[0053] Although some exemplary embodiments have been described herein, it
should be understood by those skilled in the art that these embodiments
are given by way of illustration only, and that various modifications,
variations and alterations can be made without departing from the spirit
and scope of the present invention, as defined only by the following
claims and equivalents thereof.

Patent applications by Jang Won Kang, Gwangju KR

Patent applications by Seong Ju Park, Gwangju KR

Patent applications by Yong Seok Choi, Gwangju KR

Patent applications by GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

Patent applications in class SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE

Patent applications in all subclasses SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE