Question

An ideal MOSFET on a p-type silicon substrate has an oxide
thickness of 0.1?m and a dielectric constant K0 = 4 with the p-type
Si doped to a concentration of 1016cm-3. Assume NV = 1x1019/cm3, NC
= 2.8x1019/cm3

If non-ideal interface trap density of Dit = 5x1010/cm2/eV is to be
considered, what is the shift in the flat band voltage? Assuming
all interface traps are acceptor-like (negatively charged if filled
with an electron and neutral if empty)