Title (fr)

Publication

Application

Priority

JP 12712099 A 19990507

Abstract (en)

A semiconductor device (10) including an insulation film (13) covering it to expose electrodes or pads (12) fabricated in the chip (10) and wiring lines (14,16) located on the insulation film (13) and connected to the respective electrodes or pads (12) is produced by a method which comprises: providing a semiconductor chip (10) having an insulation film (13) covering the chip (10) so as to expose a conductor layer for electrodes or pads (12) fabricated in the chip (10), ion milling the surface of the chip (10), and dry etching the surface of the chip (10) provided with the insulation film (13) and the patterned conductor layer (14) with nitrogen gas. <IMAGE>