FABRICATION OF METAL NANOPARTICLES IN SAPPHIRE BY LOW-ENERGY ION IMPLANTATION

A.L. Stepanov and I.B. Khaibullin

Abstract

he present review concentrates on the fabrication of metal nanoparticles in sapphire matrix by ion implantation and
their modification by laser annealing. This approach is promising for the development of optical composite materials in the
optoelectronics production technology. Composite layers were fabricated in sapphire by implantation of 40-keV Cu+ ions at a dose
of 1.0.1017 ion/cm2 and an ion beam current density varying from 2.5
to 10 µA/cm2.
The composites were examined by different
methods: Rutherford backscattering (RBS), atomic force microscopy (AFM) and optical spectroscopy. It is shown that ion
implantation is suited for creation of copper nanoparticles in the near-surface sapphire layer. However, the nanoparticle size
distribution in this layer is nonuniform. An interaction of high power excimer laser pulsed with fabricated composite layer aimed
to modify the sizes and the size distribution of copper particles. It is found that the laser annealing diminishes nanoparticles
in the sapphire. Experimental data on laser modification may be explained by photofragmentation and/or melting of the
nanoparticles in the sapphire matrix.