Toshiki Seshita, Kanagawa-Ken JP

Toshiki Seshita, Kanagawa-Ken JP

Patent application number

Description

Published

20090023415

SEMICONDUCTOR SWITCHING DEVICE - A semiconductor switching device includes, on one semiconductor substrate: a switching circuit configured to switch connection states between a plurality of terminals; a negative voltage generating circuit; and a control circuit connected to the switching circuit and the negative voltage generating circuit and configured to supply a control signal to the switching circuit, the control circuit including: a level shift circuit with a low-potential power supply terminal connected to the negative voltage generating circuit and an output node connected to the switching circuit, the level shift circuit being configured to supply a negative potential signal as a control signal at a low level to the switching circuit; a diode with its anode connected to the output node of the level shift circuit; and a transistor with its drain-source path connected between the cathode of the diode and ground, the drain-source path switching from a blocking state to a conducting state before the potential of the output node of the level shift circuit switches from a high level to the low level.

01-22-2009

20090181630

RADIO FREQUENCY SWITCH CIRCUIT - A radio frequency switch circuit includes: an antenna terminal; a first and second RF terminal; a first through transistor placed between the antenna terminal and the first RF terminal; a second through transistor placed between the antenna terminal and the second RF terminal; a first shunt transistor placed between ground and the first RF terminal; a second shunt transistor placed between the ground and the second RF terminal; and a distortion compensation circuit including a reverse parallel connected MOS capacitor whose capacitance around 0 volts has voltage dependence that is convex to the minus direction, the distortion compensation circuit being operable to compensate for voltage dependence of off-capacitance around 0 volts of the first and second through transistor and the first and second shunt transistor that is convex to the plus direction. Electrical connection between the antenna terminal and the first and second RF terminal is switchable.

07-16-2009

20100073066

RADIO-FREQUENCY SWITCH CIRCUIT - A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.

03-25-2010

20100237842

SWITCHING CIRCUIT - A switching circuit includes: a switching section including at least one first terminal, a plurality of second terminals, and a switching element configured to connect the first terminal to one of the second terminals; a driver driving the switching element in accordance with an external terminal switching control signal; a DC-to-DC converter, which supplies electric power to the driver, having a first state with a response to a load transient and a second state with the response to a load transient being slower than the first state; and a power controller controlling the DC-to-DC converter to operate with the first state during a first time period corresponding to change in the external terminal switching control signal, and to operate with the second state during a second time period other than the first time period.

09-23-2010

20110050288

SEMICONDUCTOR SWITCH - A semiconductor switch includes: a first terminal; a second terminal; a switch section including a through FET connected between the first terminal and the second terminal and a shunt FET connected between the second terminal and a first ground terminal; a first control terminal configured to drive the through FET; a second control terminal configured to drive the shunt FET; and a driver provided on a substrate together with the switch section and configured to provide a differential output to the first control terminal and the second control terminal.

03-03-2011

20110050323

SEMICONDUCTOR SWITCH - A semiconductor switch includes: a switch section, provided on a substrate, switching connection states among a plurality of terminals; a positive voltage generator generating a positive potential higher than a supply potential supplied from a power-supply line; a driver, connected to an output line of the positive voltage generator, supplying a control signal to the switch section in response to a terminal switching signal; and a voltage controller, provided on the same substrate, controlling to connect the output line of the positive voltage generator to the power-supply line for a first period corresponding to a change in the connection states, and controlling to disconnect the output line from the power-supply line after the first period.

03-03-2011

20110095806

SEMICONDUCTOR SWITCH - According to one embodiment, a semiconductor switch includes a voltage generator, a driver, a switch section, and a power supply controller. The voltage generator is configured to generate a first potential and a negative second potential. The first potential is higher than a power supply voltage supplied to a power supply terminal. The driver is connected to an output of the voltage generator and includes a first level shifter and a second level shifter. The first level shifter is configured to output the first potential in response to input of high level and to output low level in response to input of low level. The second level shifter is configured to output the first potential in response to input of the first potential an output of the first level shifter and to output the second potential in response to input of low level of the output of the first level shifter. The switch section is configured to switch connection between terminals in response to an output of the driver. The power supply controller is configured to control the output of the voltage generator to be connected to the power supply terminal during a first period after supplying the power supply voltage to the power supply terminal and control the output of the voltage generator to be disconnected from the power supply terminal after expiration of the first period.

04-28-2011

20110159822

SEMICONDUCTOR SWITCH AND WIRELESS DEVICE - According to one embodiment, a semiconductor switch includes a voltage generator, a voltage controller, a driver, and a switch unit. The voltage generator generates a negative first potential. The voltage controller controls the first potential according to a terminal switch signal input from an outside. The driver is input the terminal switch signal, and outputs at least one selected from the first potential and the second potential based on the terminal switch signal. The second potential is a power supply voltage or is higher than the power supply voltage. The switch unit is provided on an SOT substrate, switches a connection between an anntena terminal and any one of high frequency terminals based on the output of the driver.

06-30-2011

20120038411

HIGH-FREQUENCY SWITCH - According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.

02-16-2012

20120068757

SEMICONDUCTOR SWITCH - According to one embodiment, a semiconductor switch includes a power supply circuit, a control circuit and a switch circuit. The power supply circuit includes an internal potential generator connected to a power supply, and a first transistor connected between an input and an output of the internal potential generator. The internal potential generator generates a first potential higher than an input potential. The first transistor is turned on when the first potential becomes lower than the input potential and has a threshold voltage being set so as to keep the first potential not lower than the input potential. The control circuit is configured to receive the first potential to output a high-level or low-level control signal. The switch circuit is configured to receive an input of the control signal to switch connection between terminals.

03-22-2012

20120068785

SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a body and a semiconductor element. The body includes a semiconductor mount, a first conductor and a second conductor provided on a periphery of the semiconductor mount. The semiconductor element is disposed on the semiconductor mount and includes a first through switching element, a first shunt switching element, a second through switching element, and a second shunt switching element. The first through switching element is connected between a common terminal and a first radio frequency terminal. A first radio frequency current is flowing through the first through switching element via the first conductor. The first shunt switching element is connected to the first radio frequency terminal. The second through switching element is connected between the common terminal and a second radio frequency terminal. The second shunt switching element has one terminal connected to the second radio frequency terminal and another terminal.

03-22-2012

20120132977

SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.

05-31-2012

20120139570

SEMICONDUCTOR DEVICE AND METHOD FOR TESTING SAME - According to an embodiment, a semiconductor device includes a switch circuit selecting a signal pathway between a common terminal and one of a plurality of terminals using a plurality of FETs provided in series between the common terminal and each of the terminals. The semiconductor device also includes a test switch including a plurality of FETs connected to the common terminal, an oscillation circuit connected to the common terminal via the test switch, and a detection circuit receiving an output of the oscillation circuit.

06-07-2012

20120153396

SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device including a switch circuit includes a first gate electrode provided between a source region and a drain region of an FET and a second gate electrode provided between the first gate electrode and the drain region. The semiconductor device also includes a control terminal electrically connected to an intermediate region between the first gate electrode and the second gate electrode, the control terminal being placed at a ground potential corresponding to ON state of the FET, and the control terminal being placed at a positive potential or a negative potential corresponding to OFF state of the FET.

06-21-2012

20120154016

SEMICONDUCTOR SWITCH AND METHOD FOR MEASURING SAME - According to one embodiment, a semiconductor switch includes a plurality of first switch elements, a second switch element, and a controller. The plurality of first switch elements are connected between a common terminal and each of a plurality of radio frequency terminals including a first terminal and a second terminal. The second switch element is connected between the first terminal and a ground terminal. The controller is configured to output a control signal to turn on or off the plurality of first switch elements and the second switch element and perform a normal operation mode to connect the common terminal to any one of the plurality of radio frequency terminals and a test mode to connect the common terminal to the first terminal, the second terminal, and the ground terminal according to a terminal switching signal.

06-21-2012

20120182061

RADIO-FREQUENCY SWITCH CIRCUIT - A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.

07-19-2012

20120218010

SEMICONDUCTOR SWITCH - A semiconductor switch includes: a switch section, provided on a substrate, switching connection states among a plurality of terminals; a positive voltage generator generating a positive potential higher than a supply potential supplied from a power-supply line; a driver, connected to an output line of the positive voltage generator, supplying a control signal to the switch section in response to a terminal switching signal; and a voltage controller, provided on the same substrate, controlling to connect the output line of the positive voltage generator to the power-supply line for a first period corresponding to a change in the connection states, and controlling to disconnect the output line from the power-supply line after the first period.

08-30-2012

20120225627

SEMICONDUCTOR SWITCH AND WIRELESS DEVICE - According to one embodiment, a semiconductor switch includes a power supply, a driver, a switch section, and a compensator. The power supply is configured to generate a first potential different from a power supply potential. The driver is configured to be supplied with a second potential different from the first potential and the first potential and output at least one of the first potential and the second potential according to a terminal switching signal. The switch section is configured to switch a connection between a common terminal and a radio frequency terminal according to an output of the driver. The compensator is configured to detect a change in the terminal switching signal and supply electric charges having a polarity the same as a polarity of the first potential to the driver for compensating the first potential.

09-06-2012

20130005279

SEMICONDUCTOR SWITCH AND WIRELESS DEVICE - According to one embodiment, a semiconductor switch includes a switch section, a driver, and a power supply. The switch section switches a connection between a common terminal and a plurality of radio-frequency terminals. The driver outputs a control signal to the switch section based on a terminal switching signal. The power supply generates a first potential based on a reference potential varying in accordance with temperature and outputs the first potential to the driver.

01-03-2013

20130038362

SEMICONDUCTOR SWITCH - According to one embodiment, a semiconductor switch includes a voltage generator, a driver, a switch section, and a power supply controller. The voltage generator is configured to generate a first potential and a negative second potential. The first potential is higher than a power supply voltage supplied to a power supply terminal. The driver is connected to an output of the voltage generator and is configured to output the first potential in response to input of high level and to output the second potential in response to input of low level. The switch section is configured to switch connection between terminals in response to an output of the driver. The power supply controller is configured to control the output of the voltage generator.

02-14-2013

20130052969

SEMICONDUCTOR SWITCH AND WIRELESS DEVICE - According to one embodiment, a semiconductor switch includes a power supply, a driver, a switch section, and a first potential controller. The power supply includes a first potential generator and a second potential generator. The first potential generator is configured to generate a negative first potential. The second potential generator is configured to generate a positive second potential that a power supply potential is stepped down. The driver is supplied with the first potential and a third potential and configured to output at least one of the first potential and the third potential based on a terminal switching signal. The switch section is configured to connect a common terminal to any one of a plurality of radio frequency terminals according to an output of the driver. The first potential controller includes a divider and an amplifier.

02-28-2013

20130141258

HIGH-FREQUENCY SEMICONDUCTOR SWITCH AND TERMINAL DEVICE - A high-frequency semiconductor switch includes a serial-parallel conversion circuit, a power supply circuit, and a drive circuit. In the serial-parallel conversion circuit, a parallel data signal is formed from a serial data signal input thereto. In the power supply circuit, a first positive voltage, a second positive voltage, and a negative voltage are formed from a high-potential power source supplied thereto. The drive circuit is supplied with the first positive voltage, the second positive voltage, and the negative voltage, and includes an inverter to which the parallel data signal is input and a differential type of level shifter to which the parallel data signal and the output signal of the inverter is provided. The drive circuit outputs the second positive voltage as a high level signal, and the negative voltage as a low level signal, to a switching circuit, and the switching circuit performs selective switching based thereon.

06-06-2013

20130293279

SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.

11-07-2013

20140220909

HIGH FREUENCY SEMICONDUCTOR SWITCH AND WIRELESS DEVICE - A high frequency semiconductor switch has a first terminal, second terminals, a first through FET group, second through FET groups and a shunt FET group. The first through FET group has first field effect transistors connected serially with each other. One end of the first through FET group is connected to the first terminal. Each of the second through FET groups has second field effect transistors connected serially with each other. One end of each of the second through FET groups is connected to each of the second terminals. The other end of each of the second through FET groups is commonly connected to the other end of the first through FET group. The shunt FET group has third field effect transistors connected serially with each other between the second terminal and a ground terminal.