Abstract

Amorphous-gallium-indium-zinc-oxide (-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional TFTs. It has been very difficult to obtain sound TFTcharacteristics, because the -GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the passivation layer. To prevent such damages, plasma is applied to the back surface of the -GIZO channel layer before deposition. plasma-treated -GIZO TFTs exhibit excellent electrical properties: a field effect mobility of , a threshold voltage of , a subthreshold swing of /decade, and an ratio of 7.