Abstract

Zone‐melt recrystallization (ZMR) of polycrystalline silicon‐on‐insulator films has been used to produce a variety of tilt grain boundaries for electrical characterization. Electron channeling patterns reveal the grains to have misorientations up to ∼25° and the parallel boundaries to be separated by distances of up to ∼1 mm. Current‐voltage measurements indicate that the boundaries are electrically inactive, with no evidence of defect gap states even after long high‐temperature anneals.