The technology is based on the high-pressure vertical zone melting technique, invented in LPCBC and allows growing crystals of any binary and ternary II-VI compound. The technology also provides means for the doping of crystals by practically any element of the Periodic table (except gases). At the time being the technology is implemented on the growth equipment , developed and manufactured in the ISSP (8 devices). The crystals, grown by the technology, cover practically any existing application, known for the wide-gap II-VI compounds, including:

• transmitting, outlet and focusing optics for the infrared range, like windows and lenses for the high-power CO2 -lasers;