Description of the book "Amorphous and Crystalline Silicon Carbide III: And Other Group IV-IV Materials - Proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11-13, 1990":

This volume, the proceedings of a conference that attracted over one hundredparticipants, details the status of worldwide research into silicon carbide and other IV-IV materials. This is an active field and several exciting new results are presented: solid-solution growth if SiC compounds, formation of SiGe heterostructures by ion implantation, an amorphous SiC/Si heterojunction prepared by the polymer route, and improved SiC LEDs and FETs.

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G.L. Harris

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