28nm

Mobile Semiconductor’s silicon-proven embedded SRAM technology offers optimized memory solutions for both TSMC and GLOBALFOUNDRIES 28nm low-power processes. These single-port SRAM and ROM solutions are available in a range of architectures:

Low Voltage, Low Leakage, Low Power SRAM (LV)

Ultra High Speed SRAM (UHS)

High Density SRAM (HD)

Multi-Megabit SRAM (MM)

Mobile Semiconductor’s proprietary design and layout techniques are applied to all architectures to optimize performance while keeping die size small.

Low voltage (LV) SRAM and ROM use high VT devices to minimize leakage currents with limited standard VT devices used when required and a dedicated retention mode providing industry leading low standby currents. The low standby current of Mobile Semiconductor’s LV memories are ideal for the IoT market.

GLOBALFOUNDRIES 28nm SLP

In order to ensure high manufacturing yield, the Trailblaze™ software utilizes GLOBALFOUNDRIES’s standard high density 6T bit cells and is consistent with GLOBALFOUNDRIES’s Design for Manufacturing (DFM) guidelines for the 28nm SLP process.