This booklet is the 1st to provide an explanation for FinFET modeling for IC simulation and the regular – BSIM-CMG - describing the push favourite for advancing the expertise from planar to 3D structure, as now enabled by way of the authorized standard.

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Why you can use FinFET

The physics and operation of FinFET

Details of the FinFET commonplace version (BSIM-CMG)

Parameter extraction in BSIM-CMG

FinFET circuit layout and simulation

Authored through the lead inventor and developer of FinFET, and builders of the BSIM-CM regular version, delivering an specialists’ perception into the standards of the standard

The first publication at the industry-standard FinFET version - BSIM-CMG

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Extra info for FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

Sample text

Furthermore, when FETs are used as switches, particularly in sampled time systems, the distortion produced by the device is sampled and processed along with the signal. The source of distortion is easy to understand since the I-V characteristics of a FET are described by nonlinear equations of terminal voltages: Ids = f (Vgs , Vds , Vbs ). 19) where lowercase symbols denote AC quantities. The first term, gm1 , is nothing but the transconductance of the device. The curvature of the I-V curve gives rise to higherorder coefficients which describe the deviation of AC from the quiescent operating point for a small deviation of the gate-source voltage about the bias point.

As noted before, gm = gds in the linear region of the transistor operation. One would expect that the thermal noise of a FET varies smoothly as the device bias is varied from strong inversion to weak inversion, with the limits of weakinversion noise given by the well-known shot noise current 2qIds . 13 Excess noise factor γ versus gate bias Vgs . operation, a plot of γ versus Vds should have physical meaning in the saturation regime. To understand the importance of γ , let us derive the noise figure of a commonsource and a common-gate amplifier.

Naturally, the bias dependence of flicker noise should be correctly captured. In a FET, all of the intrinsic noise originates from the channel and traps in the gate-oxide interface. Extrinsic parasitic elements, such as physical resistance in the gate, source, and drain, also contribute noise. Plotting noise parameters versus bias is a good way to tease out the various sources of noise: ones that depend on bias are generally due to intrinsic device noise, and fixed noise contributions are due to extrinsic sources.