Abstract

Using Auger electron spectroscopy and scanning electron microscopy, we have shown that it is possible to patternthin films of titanium oxide on GaAs substrates by first condensing multilayers of titanium isopropoxide on a cold (<−20 °C) GaAs(001) surface and then exposing the condensed precursor film to a scanning electron beam (incident energy and flux of 10 keV and 0.18 mC/cm2/s). Under these conditions, the electron-beam-induced deposition rate was found to be constant and equal to a high value of Deposition of thick films (i.e., greater than 50 Å) results after electron exposures above 2 mC/cm2; however, increased carbon incorporation was observed within these thicker oxide films. The remaining unexposed precursor was found to desorb upon annealing to room temperature, ensuring selective area pattern definition. Efficient transfer of the written patterns to the underlying GaAs substrate was observed after etching in chlorine (etch depths of 8500 Å were measured after etching for 5 min at 180 °C in of ).