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13(c) that the fringe field in the “flat” inter-sphere regime is essentially zero, thus it has no effect on the lateral domain motion once lost the nu- 2 Fabrication and Characterization of Ferroelectric Crystals: GaN and LiNbO3 41 Fig. 12. (a) Far-field red SHG images, (b) wavelength acceptance width, and (c) external SHG conversion efficiency for Sample C of Fig. 11 using a 1200 nm ns pump laser cleation preference to its edge component as discussed in Fig. 13(b). 25Ec can be found underneath the region of the self-assembled sphere, there the corresponding Ez value is well below Ec and thus cannot initiate the domain reversal process.

5 µm on the −Z face of LiNbO3 due to a finite lateral domain motion. We should comment on this field modulation technique with a recent report that employs thickness modulation of a 2D photo-resist to fabricate submicron reversed domains in LiNbO3 [67]. In the latter case, the thickness modulation in the photo-resist was realized by moiré interference lithography to have the resist pattern size and thickness to follow the intensity modulation. -H. Peng et al. of electric field overpoling, submicron surface domain structures can be realized.