Abstract

The present status of GaN-based FETs has
been described with a focus on microwave high-power
performance. Our latest developments of the devices are
presented, and the device and amplifier performance is
reported. This includes the demonstration of a 230-W CW
output power at 2 GHz, a 156-W pulsed output power at 4
GHz, and a 5.8-W CW output power at 30 GHz. The results
confirmed excellent potential of the GaN-based FETs
especially for high-voltage, high-power applications at
microwave and millimeter-wave frequencies.

Abstract

The present status of GaN-based FETs has
been described with a focus on microwave high-power
performance. Our latest developments of the devices are
presented, and the device and amplifier performance is
reported. This includes the demonstration of a 230-W CW
output power at 2 GHz, a 156-W pulsed output power at 4
GHz, and a 5.8-W CW output power at 30 GHz. The results
confirmed excellent potential of the GaN-based FETs
especially for high-voltage, high-power applications at
microwave and millimeter-wave frequencies.