Author

Qiao, Zhongliang

Tang, Xiaohong

Li, Xiang

Bo, Baoxue

Gao, Xin

Qu, Yi

Liu, Chongyang

Wang, Hong

Date of Issue

2017

School

School of Electrical and Electronic Engineering

Research Centre

Temasek Laboratories

Abstract

InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO2 mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880 °C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip.