Fiji1 vs. Fiji2 TiN Characterization

Plasma TiNDeposition rate of 0.4A/cycle for standard recipe

We have measured conductivities in the range of 15-20microohm-cm
for TiN and Auger Electron Spectroscopy shows no oxygen present in the
film.

AFM measurements of 20nm TiN films shows a roughness of .2nm, which is on the order of a polish Si wafer.

Furnished by Dr. J Provine and WooShik Jung: In May and June of 2012, we ran several plasmaTiN measurements on fiji1. All measurements for resistivity were in the range of 10-20uOhm*cm. Wooshik got the record measurement with 6uOhm*cm at the same time. The dep rate came out closer to .6-.7 A/cycle as measured by XRD.