So far, extensive research has been carried out for III-V semiconductor materials from
crystal growth to device fabrications. The reason for this is that III-V shows the highest energy
conversion efficiency due to high absorption coefficient and optimal and direct band gap. However,
there is problem for III-V applications, which is the high cost of raw materials. We are exploring a
method which addresses this limitation. High optical quality crystals have been grown on selected tiny
areas to make array of crystals such as on metal foils. This should be useful as a PV without any
loss by shut pass or surface recombinations. This method would be useful for making high-quality and
cost-effective method for III-V PVs.