Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.

We thank S. E. T. ter Huurne and Y. L. W. van Hees for assisting with the measurements and Dr. S. Koelling for the fabrication of the lamellae. This research is jointly supported by the Dutch Technology Foundation STW and Philips Electronics. STW is part of The Netherlands Organization for Scientific Research (NWO), which is partly founded by the Ministry of Economic Affairs. Solliance is acknowledged for funding the TEM facility.

Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.

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We thank S. E. T. ter Huurne and Y. L. W. van Hees for assisting with the measurements and Dr. S. Koelling for the fabrication of the lamellae. This research is jointly supported by the Dutch Technology Foundation STW and Philips Electronics. STW is part of The Netherlands Organization for Scientific Research (NWO), which is partly founded by the Ministry of Economic Affairs. Solliance is acknowledged for funding the TEM facility.