Heeseok Eun, Yongin-Si KR

Heeseok Eun, Yongin-Si KR

Patent application number

Description

Published

20090185417

Apparatus and method of memory programming - A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.

07-23-2009

20090207659

Memory device and memory data read method - Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell.

08-20-2009

20090235129

Apparatus and method for hybrid detection of memory data - The data detecting apparatus may provide a voltage comparison unit that compares a reference voltage, associated with a specific data bit from among a plurality of data bits stored in a memory cell, with a threshold voltage in the memory cell, a detection unit that detects a value of the specific data bit based on a result of the voltage comparison unit, and a decision unit that decides whether the specific data bit is successfully detected based on whether an error occurs in the detected data. The detection unit may re-detect a value of the specific data bit based on detection information with respect to at least one of an upper data bit and a lower data bit in relation to the specific data bit, in response to a result of the decision unit.

09-17-2009

20100027342

Memory device and memory data determination method - A memory device and a memory data determination method are provided. The memory device may estimate a threshold voltage shift of a first memory cell based on data before the first memory cell is programmed and a target program threshold voltage of the first memory cell. The memory device may generate a metric of a threshold voltage shift of a second memory cell based on the estimated threshold voltage shift of the first memory cell. Also, the memory device may determine data stored in the second memory cell based on the metric.

02-04-2010

20100142281

Non-Volatile Memory Device and Program Method Thereof - Disclosed is a program method of a non-volatile memory device which comprises classifying plural memory cells into aggressor cells and victim cells based on program data to be written in the plural memory cells; and programming the aggressor cells by a program manner different from the victim cells.

06-10-2010

20100149868

Access method of non-volatile memory device - Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.

Apparatus and method of memory programming - A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.