Abstract

We demonstrated that the timescale for Si quantum dot (Si-QD) formation in a layer is a few milliseconds by IR laser irradiation. The amount of Si agglomerated into QD in a laser irradiated layer is comparable to that calculated after furnaceannealing at for 30 min. However, we found that crystalline Si-QD can be formed by laser only if the amount of Si atoms in excess is as high as . The Si-QD contains impurities like N and O that prevent luminescence at 900 nm. The photoluminescence(PL) signal is recorded only after an additional annealing after laser irradiation at temperatures above when diffusion-assisted replacement of N and O occurs.