Vishay Siliconix SiR662DP 60V N-ChannelTrenchFET® Power MOSFETs

Vishay Siliconix SiR662DP 60V N-Channel TrenchFET®
Power MOSFET provides industry-leading on-resistance values up to 27%
lower than the next closest competing device. Vishay Siliconix SiR662DP
TrenchFET® Power MOSFET also offer the industry's best on-resistance
times gate charge figure of merit (FOM) that is up to 57% better than
the closest competing device. SiR662DP TrenchFET® Power MOSFET provide
lower conduction losses while also lowering switching losses, especially
at higher frequency. It is designed for use in secondary side
synchronous rectification in DC/DC and AC/DC converters, primary side
switching in DC/DC converters, point-of-load modules, motor drives,
bridge inverters, and mechanical relay replacement applications.

Features

VDS = 60V

On-resistance up to 27% better than next best device

Lowers conduction losses

Figure of merit (FOM) up to 57 % better than next best device

Lowers switching losses, especially at higher frequency

On-resistance ratings down to VGS = 4.5 V

PowerPAK® SO-8 Package

Applications

Isolated DC/DC converters: primary side switch and secondary side synchronous rectification for IBC and POL