Abstract

This paper presents the influence of the recess extension on the power performance of double heterostructure Al0.65In0.35As/In0.35Ga0.65As/GaAs metamorphic HEMT’s in the millimeter wave range. Depending on the recess extension, devices exhibit an extrinsic cut-off frequency varying from 80 to 120 GHz. Output power measured at 60GHz with passive load pull bench can reach a power density of 340mW/mm with 6.5 dB linear gain and 21%PAE.

Abstract

This paper presents the influence of the recess extension on the power performance of double heterostructure Al0.65In0.35As/In0.35Ga0.65As/GaAs metamorphic HEMT’s in the millimeter wave range. Depending on the recess extension, devices exhibit an extrinsic cut-off frequency varying from 80 to 120 GHz. Output power measured at 60GHz with passive load pull bench can reach a power density of 340mW/mm with 6.5 dB linear gain and 21%PAE.