This Sentaurus TCAD simulation project provides a template setup for SiGe HBT process simulations. The process simulations are performed by Sentaurus Process incorporating advanced models to treat lattice mismatch between germanium and silicon, and the effect of germanium on diffusion of dopants and point defects.

SiGe HBT device; concentrations of dopants in the various regions are shown; distances are in µm

Gummel plot for the SiGe HBT: base current (blue), collector current (red), and DC current gain (black)

The simulation project is part of the Sentaurus TCAD distribution at:

../Example_Library/Bipolar/SiGeHBT_processing

If you are interested in accessing this Application Example, please fill out the Example Request Form and you will be emailed download instructions.