This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage­blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Industry Standard High Power TO­247 Package with Isolated Mounting Hole High Speed Eoff: 150 mJ/A typical at 125°C High Short Circuit Capability 10 ms minimum Robust High Voltage Termination

CSD25211W1015 : P-Channel NexFETâ,,˘ Power MOSFET The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile..