Artikel i vetenskaplig tidskrift, 2017

The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm(2)& V-1.s(-1) at room temperature was achieved in InGaAsBi with x(Bi) = 6.2%, which is the highest value reported in InGaAsBi with x(Bi) > 5%. (C) 2017 The Japan Society of Applied Physics