Abstract

Minimizing carrier recombination at cell contacts becomes increasingly important for reaching high efficiency. In this work, the passivated contact concept is implemented into n-type silicon solar cells with laser-processed local back surface fields. The passivation and contact characteristics of the SiO2/amorphous silicon (a-Si:H) stack on localized laser dopedn+ regions are investigated. We find that the SiO2/a-Si:H stack provides not only good passivation to laser dopedn+ regions but also allows a low contact resistivity after thermal annealing. With the implementation of the SiO2/a-Si:H passivated contact, an absolute efficiency gain of up to 1.5% is achieved for n-type solar cells.

[Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof, Manufacture or treatment of devices consisting of
a plurality of solid state components or integrated circuits formed in or on a common
substrate or of specific parts thereof; Manufacture of integrated circuit devices or of
specific parts thereof]