Samsung revealed today that the development of faster 1Gbit mobile DRAM (128MB) modules has started. The new modules with wide Input/Output interface use the 50 nm class process technology and to cut straight to the point – they should be blazingly fast!

The new RAM is designed specifically for smartphones and tablets and to make it less boring, let’s bring some numbers to the table to help you grasp the benefits of the new Samsung mobile DRAM.

The new DRAM can transmit data at 12.8 gigabytes per second (GB/s), which is eight times faster than the current mobile DDR DRAM, which can only do 1.6GB/s. Power consumption is also reduced as much as 87%.

The new Samsung’s wide I/O DRAM uses 512 pins for data input and output, which is a lot, considering the previous generations of mobile DRAM modules use a maximum of 32 pins.

The future holds more power and power efficient RAM, according to Samsung. The company’s plan is to start providing 20nm-class, 4Gb (that’s gigabits) wide I/O mobile DRAM some time in 2013.