Abstract

Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geometries are found, resulting from the combination of the large spin-orbit coupling associated with the p-dexchange interaction, cubic anisotropy of heavy-hole dispersion and the low C2v symmetry of the chemical bonds.

[Including components using galvano-magnetic
effects, e.g. hall effect; Using similar magnetic field effects, Including components using galvano-magnetic effects, e.g. hall effect; Using similar magnetic field effects]

[Devices using galvano-magnetic or similar magnetic
effects; Processes or apparatus specially adapted for the manufacture or treatment
thereof or of parts thereof, Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof]