Sign up to receive free email alerts when patent applications with chosen keywords are publishedSIGN UP

Abstract:

A writing method includes emitting a first charged particle beam formed to
be a first shape by passing through a first shaping aperture and a second
shaping aperture, onto a target workpiece; and emitting a second charged
particle beam formed to be a second shape by passing through the first
shaping aperture and the second shaping aperture, wherein the second
charged particle beam is superimposed onto a same position exposed by the
first charged particle beam and is formed by using an opposite sides of
respective first and second shaping apertures to those used for the first
shape.

Claims:

1. A writing method comprising:emitting a first charged particle beam
formed to be a first shape by passing through a first shaping aperture
and a second shaping aperture, onto a target workpiece; andemitting a
second charged particle beam formed to be a second shape by passing
through the first shaping aperture and the second shaping aperture,
wherein the second charged particle beam is superimposed onto a same
position exposed by the first charged particle beam and is formed by
using an opposite sides of respective first and second shaping apertures
to those used for the first shape.

2. The method according to claim 1, wherein the first shape and the second
shape are squares.

3. The method according to claim 1, wherein each of the first shape and
the second shape includes a first side formed by the first shaping
aperture and a second side formed by the second shaping aperture.

4. The method according to claim 3, wherein the first charged particle
beam and the second charged particle beam are emitted so that the first
side included in the first shape overlaps with the second side included
in the second shape.

5. The method according to claim 1, wherein a beam profile of the first
shape and a beam profile of the second shape are combined to be
symmetrical.

6. A writing method comprising:emitting a first charged particle beam
formed to be a first shape by passing through both a first shaping
aperture and a second shaping aperture, onto a target workpiece;
andemitting a second charged particle beam formed to be a second shape by
passing through both the first shaping aperture and the second shaping
aperture, in such a way the second shape is positioned adjacent to the
first shape, but with corresponding sides which are sides of respective
shapes formed by one same aperture of the first shaping aperture and the
second shaping aperture, face each other.

7. The method according to claim 6, wherein the first charged particle
beam and the second charged particle beam are emitted so that they partly
overlap each other.

8. The method according to claim 6, wherein the first charged particle
beam and the second charged particle beam are emitted so that they have a
space therebetween.

9. The method according to claim 6, wherein the second charged particle
beam is emitted onto a position adjacent to another position irradiated
by the first charged particle beam, in order that a side of the first
shape and a side of the second shape formed by the second shaping
aperture become outer sides.

Description:

CROSS-REFERENCE TO RELATED APPLICATION

[0001]This application is based upon and claims the benefit of priority
from the prior Japanese Patent Application No. 2007-222646 filed on Aug.
29, 2007 in Japan, the entire contents of which are incorporated herein
by reference.

BACKGROUND OF THE INVENTION

[0002]1. Field of the Invention

[0003]This invention relates to a pattern writing method with charged
particle beam, and for example, to a writing method of a writing
apparatus which varies a beam shape by letting the beam pass through two
shaping apertures.

[0004]2. Description of Related Art

[0005]The lithography technique that drives advancement of micro-scaling
of semiconductor devices is extremely important being the only process to
form patterns in semiconductor manufacturing processes. In recent years,
with high integration of large-scale integrated circuits (LSI), critical
dimensions required for semiconductor device circuits are shrinking year
by year. In order to form a desired circuit pattern on semiconductor
devices, a master pattern (called a mask or a reticle) of high precision
is required. The electron beam intrinsically has excellent resolution and
is used for generating such highly precise master patterns.

[0006]FIG. 13 is a schematic diagram to illustrate operations of a
variable-shaped electron beam (EB) type pattern writing apparatus. As
shown in the figure, the variable-shaped electron beam writing apparatus,
including two aperture plates, operates as follows: A first shaping
aperture plate 410 has a rectangular opening or "hole" 411 for shaping an
electron beam 330. This shape of the rectangular opening may also be a
square, a rhombus, a rhomboid, etc. A second shaping aperture plate 420
has a variable-shaped opening 421 for shaping the electron beam 330 that
passed through the opening 411 into a desired rectangular shape. The
electron beam 330 emitted from a charged particle source 430 and having
passed through the opening 411 is deflected by a deflector to pass
through the variable-shaped opening 421 and thereby to irradiate a target
workpiece or "sample" mounted on a stage which is continuously moved in
one predetermined direction (e.g. X direction) during the writing or
"drawing." In other words, a rectangular shape formed as a result of
passing through both the opening 411 and the variable-shaped opening 421
is written or "drawn" in the writing region of a target workpiece 340 on
the stage. This method of forming a given shape by letting beams pass
through both the opening 411 and the variable-shaped opening 421 is
called a "variable shaped" method.

[0007]As mentioned above, each side of a formed rectangle is shaped by
either of the opening 411 or the variable-shaped opening 421. In the
variable-shaped type electron beam pattern writing apparatus, beam
resolution degradation is induced by space charge effect. The space
charge effect is proportional to multiplication result of (or product of
multiplying) current density, shot area, and beam travel distance.
Concretely, the space charge effect is incurred as follows: In FIG. 13,
assuming the current density is constant and common over the area in
question, the area of the opening 411 is denoted S0, the area of the
beam which passes through the variable-shaped opening 421 after passing
through the opening 411 is denoted S2, the distance from the opening
411 to the variable-shaped opening 421 is denoted L1, and the
distance from the variable-shaped opening 421 to the target workpiece 340
is denoted L2. In that case, the space charge effect on the side of
the beam shaped by the opening 411 is proportional to
L1×S0+L2×S2. On the other hand, the space
charge effect on the side of the beam shaped by the variable-shaped
opening 421 is proportional to L2×S2. Since the space
charge effect on the side of the beam shaped by the opening 411 is
larger, resolution thereon deteriorates more than the other side.

[0008]FIG. 14 shows an example of beam profile of a beam formed by the
first and second shaping apertures. It is known from FIG. 15 that the
resolution deteriorates more along the side formed by the first shaping
aperture (opening 411) than the other side formed by the second shaping
aperture (variable-shaped opening 421).

[0009]For the charged beam (electron beam) exposure system with low
acceleration voltage for directly forming a pattern onto a wafer, a
technique to reduce the influence of the space charge effect induced
between the first shaping aperture and the second shaping aperture, is
already invented and disclosed. Specifically, in the beam exposure
apparatus, plural rectangular openings with either different shape or
area size are added to the first aperture, and deflection scheme is
arranged so that the smallest area opening on the first aperture can be
selected to enable irradiation on the desired region on the second
shaping aperture. (refer to, e.g., Japanese Patent Application Laid-open
(JP-A) No. 2006-128564).

[0010]As can be seen from FIG. 14 the resolution deteriorates more along
the side formed by the first shaping aperture, which is further away from
the target plate, than the other side formed by the second shaping
aperture, closer to the target.

[0011]FIG. 15 shows an example of profile, dimension, and center of a beam
formed by the first and second shaping apertures. It can also be seen
from FIG. 15 that dimensional differences are induced among pattern 94
developed under proper condition in terms of time (threshold +/-0),
pattern 92 developed in shorter developing time than the proper setting
(threshold -), and pattern 96 developed in longer developing time than
the proper setting (threshold +). Thus, variations of development time
cause deterioration of pattern dimension accuracy. Furthermore, center
positions 93, 95 and 97 of the patterns 92, 94, and 96 respectively do
not match due to deteriorated and variable resolution mentioned above.

[0012]While the example mentioned above refers to a case of forming a
pattern with one shot, there are, in reality, many cases where one
pattern is formed by combining multiple shots. FIG. 16 shows an example
of a pattern formed by combining multiple patterns. In this case, one
pattern 31 is formed by stitching combining pattern 33 and pattern 35.
FIG. 17 shows the two shots and their respective profiles for forming the
pattern shown in FIG. 16. Combining formed beams 85 and 87 results in a
new beam with the synthesized beam profile 89. Even in this case, the
same problems as shown in FIG. 14 are induced. In addition, there are
such error factors as; positioning error of datum position 86 of shot 85,
positioning error of datum position 88 of shot 87, and a error in shot
dimension L3 of shot 85 with a side resolution of which is
deteriorated. It is not easy to cope with such three error factors.

BRIEF SUMMARY OF THE INVENTION

[0013]The object of the present invention is to provide methods for
eliminating detrimental effects caused by beam resolution degradation due
to the space charge effect on the beam formed by the first and second
shaping apertures in a mask writing system.

[0014]In accordance with one aspect of the present invention, a writing
method includes emitting a first charged particle beam formed to be a
first shape by passing through a first shaping aperture and a second
shaping aperture, onto a target workpiece; and emitting a second charged
particle beam formed to be a second shape by passing through the first
shaping aperture and the second shaping aperture, wherein the second
charged particle beam is superimposed onto a same position exposed by the
first charged particle beam and is formed by using an opposite sides of
respective first and second shaping apertures to those used for the first
shape.

[0015]In accordance with another aspect of the present invention, a
writing method includes emitting a first charged particle beam formed to
be a first shape by passing through both a first shaping aperture and a
second shaping aperture, onto a target workpiece; and emitting a second
charged particle beam formed to be a second shape by passing through both
the first shaping aperture and the second shaping aperture, in such a way
the second shape is positioned adjacent to the first shape, but with
corresponding sides which are sides of respective shapes formed by one
same aperture of the first shaping aperture and the second shaping
aperture, face each other.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016]FIG. 1 is a schematic diagram illustrating a structure of a writing
apparatus according to Embodiment 1;

[0017]FIG. 2 is a flowchart showing main steps of a writing method of
Embodiment 1;

[0018]FIG. 3 shows an example of a shaped beam image of (2n-1)th writing
with Embodiment 1;

[0020]FIG. 5 shows examples of two beam profiles and an example of a beam
profile synthesized by combining them in Embodiment 1;

[0021]FIG. 6 shows an example of a pattern formed by combining two
patterns with Embodiment 1;

[0022]FIG. 7 shows an example of shaped beam image in each of
odd-number-th and the even-number-th writing, each beam profile of each
of the two shots to be combined, and a resultant beam profile after
combining the beams, with Embodiment 1;

[0023]FIG. 8 shows an example of a pattern formed by stitching three
patterns with Embodiment 1;

[0024]FIGS. 9A to 9E show examples of forming a beam for writing one
pattern with two shots, beam profiles of two shots to be combined, and a
beam profile after synthesized;

[0025]FIG. 10 shows an example of multiple shot positions for synthesizing
one pattern;

[0026]FIG. 11 shows another example of multiple shot positions for
synthesizing one pattern;

[0027]FIG. 12 is another example of the same implementation as in FIGS. 10
and 11.

[0029]FIG. 14 shows an example of a profile of a beam formed by the first
and second shaping apertures;

[0030]FIG. 15 shows an example of variation of beam profiles, pattern
dimensions, and pattern center positions of respective beam profiles
formed variably dependent on development parameter differences even
though they are all formed by the first and second shaping apertures;

[0031]FIG. 16 shows an example of a pattern formed by combining multiple
patterns; and

[0032]FIG. 17 shows an example of two shots for forming the pattern shown
in FIG. 16, and an example of their respective profiles.

DETAILED DESCRIPTION OF THE INVENTION

[0033]In the following Embodiments, a structure utilizing an electron
beam, as an example of a charged particle beam, will be described.
Charged particle beam is not limited to the electron beam, and may be
another charged particle beam, such as ion beam.

Embodiment 1

[0034]FIG. 1 shows a schematic diagram illustrating a structure of a
writing apparatus described in Embodiment 1. In FIG. 1, a pattern writing
apparatus 100 includes a writing unit 150 and a control unit 160. The
pattern writing apparatus 100 serves as an example of a charged particle
beam writing apparatus. The pattern writing apparatus 100 writes a
desired pattern on a target workpiece 101. The control unit 160 includes
a control computer 120, a deflection control circuit 110, a magnetic disk
drive 109, and digital-to-analog converters (DAC) 112 and 114. The
writing unit 150 includes an electron lens barrel 102 and a writing
chamber 103. In the electron lens barrel 102, there are an electron gun
assembly 201, an illumination lens 202, a first shaping aperture 203, a
projection lens 204, a shaping deflector 205, a second shaping aperture
206, an objective lens 207, and a deflector 208 adequately arranged. In
the writing chamber 103, there is an movable XY stage 105 adequately
arranged. On the XY stage 105, target work piece 101 is placed being
supported by three pins. Typical target work piece 101, for example, is a
mask for exposing or "transferring and printing" a pattern onto a wafer.
Such a mask may be a mask blank where no patterns are formed, for
example. Data for writing pattern are stored in the magnetic disk device
109. The control computer 120 controls the writing unit 150 and the
deflection control circuit 110. The shaping deflector 205 and the
deflector 208 are controlled through the deflection control circuit 110.
While only the structure elements necessary for explaining Embodiment 1
are shown in FIG. 1, it should be noted that there are other necessary
elements for the pattern writing apparatus 100, but no reference is made.

[0035]An electron beam 200 emitted from the electron gun assembly 201,
irradiates the entire first aperture 203 having an opening or "hole" in
the shape of a rectangle using the illumination lens 202. At this point,
the electron beam 200 is shaped to be a rectangle. Such a rectangular
shape may be a square, rhombus, rhomboid, etc. Then, after having passed
through the opening of the first shaping aperture 203, the electron beam
200 is projected onto the second shaping aperture 206 by the projection
lens 204 forming a first aperture image. The position of the first
aperture image on the second shaping aperture 206 is
deflection-controlled by the shaping deflector 205, and the shape and
size of the beam can be changed. Thereby, the electron beam 200 is
formed. After having passed through the opening of the second aperture
206, the electron beam 200 of a second aperture image is focused by the
objective lens 207 and deflected by the deflector 208 which is controlled
by the deflection control circuit 110, to reach a desired position on the
target workpiece 101 placed on the XY stage 105 which moves continuously.

[0036]FIG. 2 is a flowchart showing main steps of a writing method
described in Embodiment 1. In Embodiment 1, in order to eliminate the
detrimental effects caused by beam resolution degradation due to space
charge effect in the beam formed by the first and second shaping
apertures, multiple writing is performed as follows: As shown in FIG. 2,
in the odd-number (2n-1)-th writing (exposure) step (S102), and the
even-number (2n)-th writing (exposure) step (S104), beam is formed as
follows:

[0037]FIG. 3 shows an example of the shaped beam image in the (2n-1)-th
writing described in Embodiment 1. FIG. 4 shows an example of the shaped
beam image in the 2n-th writing described in Embodiment 1. FIGS. 3 and 4
show the states in which a first aperture image 10 having passed through
the first shaping aperture 203 is irradiated onto the second shaping
aperture 206. FIG. 3 shows the (2n-1)-th writing, and FIG. 4 shows the
2n-th writing. First, "shot reference position" will be explained
referring to FIG. 3. The beam portion (denoted square ABCD in the figure)
which passes through a second shaping aperture opening 12 in the first
shaping aperture image 10 becomes the resultant shaped beam. The first
shaping aperture image 10 is an image of the opening of the first shaping
aperture formed on the second shaping aperture. C point in FIG. 3 is an
intersection of the two sides of the second shaping aperture opening 12,
and the shot point corresponding to this intersection will be called a
"shot reference point." As shown in FIG. 3, the shot reference position
has a feature that it does not change even when the first aperture image
is moved on the second aperture, and the size of the shaped beam is
changed. This shot forms an image on the target workpiece, and the
position of this shot is controlled by adjusting the reference position
of the shot on the target workpiece controlling the deflector 208. In the
example of FIG. 3, the first shaping aperture image 10 is formed at the
lower left of the second shaping aperture opening 12. However, even in
the case the first shaping aperture image 10 is formed at the upper right
of the second shaping aperture opening 12 as shown in FIG. 4, the "shot
reference point" can be defined the same. Namely, the point of the shot
corresponding to an intersection A' of the two sides of the second
shaping aperture opening 12 can be defined as the "shot reference point."
Also in this case, the reference position of the shot does not change
even when the first aperture image is moved on the second aperture, and
the size of the shaped beam is changed. The position of this shot is
controlled by adjusting the reference position of the shot on the target
workpiece controlling the deflector 208. Hereafter, the writing method of
Embodiment 1 will be explained with reference to the flowchart of FIG. 2.

[0038]First, when performing the (2n-1)-th writing, the first electron
beam 200 (first charged particle beam) is formed at the lower left side
of the opening 12 of the second shaping aperture 206. FIG. 3 shows the
case where a shaped beam image 20 is formed as square ABCD (first shape).
In this first shaped electron beam 200, the side AB and the side DA are
formed by the first shaping aperture 203. On the other hand, the side BC
and the side CD are formed by the second shaping aperture 206.

[0039]As mentioned above, in the (2n-1)-th writing (exposure) step at
S102, the target workpiece 101 is exposed by the first electron beam 200
having been shaped as a square by passing through the first and second
shaping apertures 203 and 206 as shown in FIG. 3.

[0040]Next, when performing the 2n-th writing, the second electron beam
200 (second charged particle beam) is formed at the upper right side of
the opening 12 of the second shaping aperture 206. FIG. 4 shows the case
where a shaped beam image 22 is formed as square A'B'C'D' (second shape).
In this second shaped electron beam 200, the side A'B' and the side D'A'
are formed by the second shaping aperture 206. On the other hand, the
side B'C' and the side C'D' are formed by the first shaping aperture 203.
The shaped beam images 20 and 22 are controlled by the shaping deflector
205 so that they may become the same shape of the same size. Thus, the
two squares shaped as mentioned above have sides overlapped by those
formed by apertures one and two respectively. In other word, as to the
two squares shaped as mentioned above, each side of the squares is formed
in the state where the shaping apertures which form the each side are
opposite.

[0041]As mentioned above, in the 2n-th writing (exposure) step at S104,
the second electron beam 200 formed to be a square by passing through the
first and second shaping apertures 203 and 206, is superimposed onto the
same position exposed by the first charged particle beam, but using the
opposite sides of respective first and second shaping apertures to those
used for the first electron beam 200 in S102. In other word, each side of
the square shaped beam image 22 corresponding to each side of the shaped
beam image 20 is formed by either the first shaping aperture 203 or the
second shaping aperture 206 being opposite to the first shaping aperture
203 or the second shaping aperture 206 which forms the each side of the
shaped beam image 20, and the second electron beam 200 overlappingly
irradiates the position which has been irradiated by the first electron
beam 200.

[0042]FIG. 5 shows examples of two beam profiles and an example of a beam
profile made by combining them in Embodiment 1. As to a beam profile 21
to be emitted onto the target workpiece 101 in the (2n-1)-th writing,
since the left side AB is formed by the first shaping aperture 203, its
resolution is degraded (the rise of the beam intensity is dull). On the
other hand, since the right side CD is formed by the second shaping
aperture 206, its resolution is good (the fall of the beam intensity is
sharp). Meanwhile, as to a beam profile 23 to be emitted onto the target
workpiece 101 in the 2n-th writing, since the left side A'B' is formed by
the second shaping aperture 206, its resolution is good (the rise of the
beam intensity is sharp). On the other hand, since the right side C'D' is
formed by the first shaping aperture 203, its resolution is degraded (the
fall of the beam intensity is dull). It is feasible to make the right and
left sides symmetrical like a beam profile 24 by combining the two beam
profiles 21 and 23. Thus, by combining multiple shots in such a way that
both first and second shaping apertures are used for the same sides of
shape 1 and 2, making the profile of the beam after the multiple writing
symmetrical. Consequently, it is achievable to suppress the displacement
of the pattern center position, caused by the position of the threshold
value, which is the problem described with reference to FIG. 15.
Therefore, pattern dimension can be adjusted by controlling the threshold
value. Moreover, it is feasible to improve the resolution of the side
where the resolution is degraded because of having been formed by the
first shaping aperture 203. As a result, the precision of pattern
dimension can be improved.

[0043]The pattern to be written is not limited to the case of being formed
by one forming beam (shot), and it may be formed by combining multiple
shots in many cases. FIG. 6 shows an example of a pattern which is formed
by combining two patterns described in Embodiment 1. FIG. 6 shows the
case where a square pattern 30 is formed by combining two square patterns
32 and 34. In this case, the exposure is performed by two shots, one for
forming the pattern 32 and the other for forming the pattern 34.

[0044]FIG. 7 shows an example of shaped beam image in each of the
odd-number-th and the even-number-th writing, an example of each beam
profile made by combining the two shots, and an example of a beam profile
made by combining both beams, described in Embodiment 1. First, when
performing the (2n-1)-th writing, the first electron beam 200 (first
charged particle beam) is formed at the lower left side of the opening 12
of the second shaping aperture 206. The shaped beam image 20 is formed as
square ABCD (first shape) like the case of FIG. 3. In this first shaped
electron beam 200, the side AB and the side DA are formed by the first
shaping aperture 203. On the other hand, the side BC and the side CD are
formed by the second shaping aperture 206.

[0045]As mentioned above, in the (2n-1)-th writing (exposure) step at
S102, two first electron beams 200, each of which has been formed as
square ABCD by passing through the first and second shaping apertures 203
and 206, expose the target work piece 101 so that they may be placed in
line next to each other. As to the beam profile 21 to be emitted onto the
target workpiece 101 in the (2n-1)-th writing, resolution of the left
side AB having been formed by the first shaping aperture 203 is degraded
(the rise of the beam intensity is dull). On the other hand, resolution
of the right side CD having been formed by the second shaping aperture
206 is good (the decay of the beam intensity is sharp). Thus, such beam
profiles 21 are adjacently located.

[0046]Next, when performing the 2n-th writing, the second electron beam
200 (second charged particle beam) is formed at the upper right side of
the opening 12 of the second shaping aperture 206. The shaped beam image
22 is formed as square A'B'C'D' (second shape) like the case of FIG. 4.
In this second shaped electron beam 200, the side A'B' and the side D'A'
are formed by the second shaping aperture 206. On the other hand, the
side B'C' and the side C'D' are formed by the first shaping aperture 203.
The shaped beam images 20 and 22 are controlled by the shaping deflector
205 so that they may become the same shape of the same size. Thus, the
two squares shaped as mentioned above have sides overlapped by those
formed by apertures one and two respectively. In other word, as to the
two squares shaped as mentioned above, each side of the squares is formed
in the state where the shaping apertures which form the each side are
opposite.

[0047]As mentioned above, in the 2n-th writing (exposure) step at S104,
the adjacent two second electron beams 200, each of which has been formed
to be square by passing through the first and second shaping apertures
203 and 206, is superimposed onto the same position exposed by the first
charged particle beam, but using the opposite sides of respective first
and second shaping apertures to those used for the first electron beam
200 in s102. In other word, the adjacent two second electron beams 200 is
formed in the state where the shaping aperture which forms each side of
the square shaped beam image 22 is opposite to the other shaping aperture
which forms each side of the shaped beam image 20, overlappingly
irradiate the position which has been irradiated by the two first
electron beams 200. As to the beam profile 23 to be emitted onto the
target workpiece 101 in the 2n writing, resolution of the left side
A'B'having been formed by the second shaping aperture 206 is good (the
rise of the beam intensity is sharp). Thus, the pattern resolution can be
improved by that the perimeter side of the pattern formed by combining
the first and second shapes is formed by the second shaping aperture. On
the other hand, resolution of the right side C'D' having been formed by
the first shaping aperture 203 is degraded (the fall of the beam
intensity is dull). Thus, such beam profiles 23 are adjacently located.

[0048]By combining the adjacent two beam profiles 21 and the adjacent beam
profile 23, it is feasible to balance the right and left sides like a
beam profile 26. Consequently, even when combining two patterns, it is
also achievable to suppress the displacement of the pattern center
position, caused by the position of the threshold value, which is the
detrimental issue described in FIG. 15. Therefore, pattern dimension can
be adjusted by controlling the threshold value. Moreover, it is feasible
to improve the resolution of the side where the resolution is degraded
having been formed by the first shaping aperture 203. As a result, the
precision of pattern dimension can be enhanced.

[0049]Although FIG. 6 shows the case of combining two patterns, it is not
limited thereto. FIG. 8 shows an example of a pattern formed by combining
three patterns described in Embodiment 1. As shown in FIG. 8, even when
forming a square pattern 38 by combining three square patterns 32, 34,
and 36, the same result can be acquired by the state where a shaping
aperture which forms each side in the odd-number-th writing is opposite
to the other shaping aperture which forms each side in the even-number-th
writing in the multiplex writing. Furthermore, the same result can be
acquired by a pattern formed by combining four or more patterns.

[0050]By performing multiplex writing as mentioned above, it is feasible
to eliminate the detrimental effects caused by the beam resolution
degradation due to space charge effect in the beam formed by the first
and second shaping apertures.

Embodiment 2

[0051]In Embodiment 1, the case of eliminating detrimental effects caused
by beam resolution degradation by performing multiplex writing has been
explained. However, even if the multiplex writing is not performed, there
is a case of eliminating the detrimental effects by another way of
writing. In Embodiment 2, a writing method which suppresses beam
resolution degradation, without performing multiple writing will be
described. The apparatus structure in Embodiment 2 is the same as that of
FIG. 1.

[0052]It is described in Embodiment 2 how to form one pattern with two or
more shots.

[0053]FIGS. 9A to 9E show examples of forming a beam for writing one
pattern with two shots, beam profiles of two shots to be combined, and a
beam profile after combining. In the present Embodiment, as explained
below, the electron beam 200 (first charged particle beam) is formed so
that the side located opposite to the combining direction may become the
side formed by the second shaping aperture 206. First, beam forming of a
shot 42 at the left-hand side of the pattern shown in FIG. 9C will be
explained. As shown in FIG. 9A, the first aperture image 10 is formed at
the upper right of the second shaping aperture opening 12, to form the
electron beam 200 (first charged particle beam). The shaped beam image 22
is formed as square A'B'C'D' (first shape) as well as the case of FIG. 4.
In this shaped first electron beam 200, the side A'B' and the side D'A'
were formed by the second shaping aperture 206. On the other hand, the
side B'C' and the side C'D' were formed by the first shaping aperture
203.

[0054]As mentioned above, as the first writing (exposure) step, the target
workpiece 101 is exposed by the first electron beam 200 formed as square
A'B'C'D' by passing through both the first shaping aperture 203 and the
second shaping aperture 206. Up and down and right and left of the shaped
beam image 22, which has passed through the second shaping aperture 206,
are reversed by passing through the objective lens 207. Therefore, in a
shaped beam image 42 on the target workpiece 101, the side A'B'
constitutes the side located opposite to the combining direction, namely
constitutes one side of the pattern after combining. Thus, in a beam
profile 46, the left side A'B' having been formed by the second shaping
aperture 206 has good resolution (the rise of the beam intensity is
sharp). On the other hand, the right side C'D' having been formed by the
first shaping aperture 203 has degraded resolution (the fall of the beam
intensity is dull).

[0055]Next, beam forming of a shot 44 at the right-hand side of the
pattern shown in FIG. 9C will be explained. As shown in FIG. 9B, the
first aperture image 10 is formed at the lower left of the second shaping
aperture opening 12, to form the electron beam 200 (second charged
particle beam). The shaped beam image 22 is formed as square ABCD (second
shape) as well as the case of FIG. 3. In this shaped first electron beam
200, the side BC and the side CD are formed by the second shaping
aperture 206. On the other hand, the side AB and the side DA are formed
by the first shaping aperture 203.

[0056]As mentioned above, in the second writing (exposure) step, the
second electron beam 200 formed to be square ABCD by passing through both
the first and second shaping apertures 203 and 206, in such a way the
second shape is positioned adjacent to the first shape, but with
corresponding sides which are sides of respective shapes formed by a same
aperture of the first shaping aperture or and the second shaping
aperture, face each other, is emitted. In other word, the second electron
beam 200 is formed in the state where the shaping aperture which forms
each side of the square shaped beam image 20 is opposite to the other
shaping aperture which forms each side of the shaped beam image 22,
irradiates the position adjacent to the position which was irradiated by
the first electron beam so that sides formed by the first shaping
aperture 203 may face each other. Up and down and right and left of the
shaped beam image 20, which has passed through the second shaping
aperture 206, are reversed by passing through the objective lens 207.
Therefore, in a shaped beam image 44 on the target workpiece 101, the
side CD constitutes the side located opposite to the combining direction,
namely constitutes the other side of the pattern after combining. Thus,
in a beam profile 47, since the right side CD was formed by the second
shaping aperture 206, it has good resolution (the rise of the beam
intensity is sharp). On the other hand, since the left side AB was formed
by the first shaping aperture 203, it has degraded resolution (the fall
of the beam intensity is dull).

[0057]By combining the adjoining beam profile 46 and beam profile 47 shown
in FIG. 9D, the right and left sides can be the sides formed by the
second shaping aperture 206 like a beam profile 48 as shown in FIG. 9E.
Consequently, even when combining two patterns, it is achievable not only
to suppress the displacement of the pattern center position, caused by
the disposition of the threshold value, which is a detrimental issue
described with reference to FIG. 15, but also to improve the resolution
of the left and right sides. As a result, the precision of pattern
dimension can be enhanced further than Embodiment 1.

[0058]Embodiment 2 is described as follows: a reference position 43 of the
shaped beam image 42 on the target workpiece 101 is a vertex (A') on the
side located opposite to the combining direction. A reference position 45
of the shaped beam image 44 on the target workpiece 101 is a vertex (C)
on the side located opposite to the combining direction. By virtue of
having such reference positions, one of the error factors can be reduced.
That is, since the side with degraded resolution is the inner side, the
shot dimension error resulting from the side with degraded resolution can
be eliminated from the error factors. Consequently, it is achievable to
reduce the three error factors mentioned above to two error factors: the
position error of the reference position 43, and the position error of
the reference position 45. Therefore, errors can be reduced.

[0059]As to a shot position when combining shots for forming a pattern in
each Embodiment mentioned above, the following cases exist: FIG. 10 shows
an example of a shot position for a pattern which is formed by combining.
FIG. 10 shows the case where a shaped beam image 52 on the target
workpiece 101 by the first electron beam 200 and a shaped beam image 54
on the target workpiece 101 by the second electron beam 200 are
irradiated with a certain space between them. Combining a beam profile 53
of the shaped beam image 52 and a beam profile 55 of the shaped beam
image 54, wherein both the shaped beam images are adjacent each other, a
beam profile 57 can be obtained. Since there is a space, a recessed
portion is produced at the upper part. However, as long as the bottom of
the recessed portion does not reach the threshold value Th, there is no
effect on the pattern shape. Then, a pattern of dimension l1 can be
obtained.

[0060]FIG. 11 shows another example of a shot position for a pattern
formed by combining. FIG. 11 shows the case where a shaped beam image 62
on the target workpiece 101 by the first electron beam 200 and a shaped
beam image 64 on the target workpiece 101 by the second electron beam 200
are irradiated to be just contacting each other. Combining a beam profile
63 of the shaped beam image 62 and a beam profile 65 of the shaped beam
image 64, wherein both the shaped beam images are adjacent each other, a
beam profile 67 can be obtained. If the profiles cross at the
intermediate position of the beam intensity, the upper part becomes flat.
Since the upper part is parallel, naturally, it does not affect the
threshold value Th, thereby there is no effect on the pattern shape.
Then, a pattern of dimension 12 can be obtained.

[0061]FIG. 12 shows another example of a shot position for a pattern
formed by combining. FIG. 12 shows the case where a shaped beam image 72
on the target workpiece 101 by the first electron beam 200 and a shaped
beam image 74 on the target workpiece 101 by the second electron beam 200
are irradiated to be partly overlapping each other. Combining a beam
profile 73 of the shaped beam image 72 and a beam profile 75 of the
shaped beam image 74, wherein both the shaped beam images are adjacent
each other, a beam profile 77 can be obtained. Since they are partly
overlapping, a protruding portion is produced at the upper part. However,
the protrusion does not affect the threshold value Th, and there is no
effect on the pattern shape. Then, a pattern of dimension 13 can be
obtained.

[0062]As mentioned above, it is preferable to emit the first and second
charged particle beams so that they may partly overlap each other.
Alternatively, it is also preferable to emit the first and second charged
particle beams so that they may have a space there between.
Alternatively, it is also preferable to emit the first and second charged
particle beams so that their shaped beam images may just contact each
other.

[0063]While the embodiments have been described above with reference to
specific examples, the present invention is not limited to these specific
ones.

[0064]While description of the apparatus structure, control method, etc.
not directly required for explaining the present invention is omitted,
some or all of them may be suitably selected and used when needed. For
example, although the structure of the control unit for controlling the
writing apparatus 100 is not described, it should be understood that a
necessary control unit structure is to be selected and used
appropriately.

[0065]In addition, any other charged particle beam writing method and
apparatus that include elements of the present invention and that can be
appropriately modified by those skilled in the art are included within
the scope of the present invention.

[0066]Additional advantages and modification will readily occur to those
skilled in the art. Therefore, the invention in its broader aspects is
not limited to the specific details and representative embodiments shown
and described herein. Accordingly, various modifications may be made
without departing from the spirit or scope of the general inventive
concept as defined by the appended claims and their equivalents.