Morphological stability of thin films
L.J. Gray," M.F. Chisholm/ T. Kaplan*
" Engineering Physics and Mathematics Division,
^ Solid State Division, Oak Ridge National Laboratory,
ABSTRACT
The boundary element method for elastostatics is applied to a thin film sta-
bility problem arising in solid state surface science. An aim of this work is
to determine the morphology of germanium deposited on a silicon substrate.
Nonstandard boundary conditions at the material interface are used to model
the epitaxially grown film. In addition to determining the deformed geometry
it is also necessary to compute the surface stress tensor. Although the surface
displacement at the junction between the interface and the silicon free surface
is not differentiate, the hypersingular integral equation for surface stress can
still be employed. These techniques will be described, along with results from
two-dimensional calculations.
INTRODUCTION
Solids with technologically important physical properties