Hydrogenated amorphous Si and Ge films are of current interest in academic and industrial research due to their unique physical properties and important applications. The passivation of dangling-bonds leads to a significant improvement in the electronic properties by adding hydrogen into these layers. The hydrogen content in these layers is also an important factor deciding the density and the optical band gap. However, hydrogen is also suspected to degrade the performance of amorphous Si and Ge material and devices. Several studies related to hydrogen motion have been proposed to explain the light and thermal degradation effect in these layers. Thus, to improve the performance and reliability of these devices it is crucially important to understand the role of hydrogen in amorphous layers. In our previous works the structural changes of hydrogenated a-Si/Ge multilayers as a function of annealing condition was investigated. It was show that during annealing the samples underwent the significant structural changes. Due to the fast out diffusion of hydrogen from the layers the bubbles and craters were created on the surface. It was predicted that the hydrogen first released from the Ge layers because of the lower binding energy. In this report, we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates. It was clearly shown by Elastic Recoil Detection Analysis (ERDA) using MeV He2+ ions that hydrogen can diffuse out faster from Ge film than from the Si one during post-annealing.