Abstract

Atomic layer deposition(ALD)growth of TiO2thin films from titanium tetraisopropoxide (TTIP) and ozone has been studied as a function of dose and purge recipes. A novel dosing scheme was designed to introduce the TTIP precursor into the reaction chamber in multiple “μpulses” with orwithout delay times for desorption of surface product species, analogous to conventional ALDpurge cycles. Larger doses led to significantly higher growth rates while maintaining excellent uniformity across 100 mm wafers, effects which underscore the importance of surface residence times in rather complex surface reaction pathways. The production of H2O/OH surface species during the TTIP half-cycle is intrinsic to the reaction, leading to secondary reaction mechanisms and believed responsible for the enhanced growth rates and accompanying high uniformity.

Received 09 September 2011Accepted 22 November 2011Published online 15 December 2011

Acknowledgments:

This work has been partially supported by the Laboratory for Physical Sciences and by the UMD-NSF-MRSEC under Grant No. DMR 05-20471. The authors would like to thank Raymond A. Adomaitis for his valuable discussions, the NanoCenter and the NISP Lab at the University of Maryland for materials processing and characterization, and MKS Instruments and Inficon Inc., for continued support of research activities in the lab.