Summary form only given. The authors discuss the development and optimization of polysilicon grain microstructure, gate dielectric ,and light doped drain offset (LDO) for thin-film transistors (TFTs). The nominal TFTs used in this study had a W/L of 0.7/1.2 μm with a drain offset of 0.3 μm. Different gate dielectrics (SiO 2, NO, ONO) with thickness of 10-50 nm we...
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Summary form only given. An MOS evaluation of the SIO2/SiC interface as a function of oxidation conditions and substrate doping is reported. 6H SiC (Si face) epitaxial wafers were thermally oxidized in both wet and dry ambients. MOS capacitors were formed by thermally evaporating circular aluminium field plates. Capacitance transient (C-t) measurements have been perfor...
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Summary form only given. A novel AlGaAs/GaAs HBT (heterojunction bipolar transistor) structure with buried SiO2 and polycrystalline GaAs (poly-GaAs) in the extrinsic base and collector is presented. The lower dielectric constant of SiO2 and complete carrier depletion of n-type poly-GaAs have reduced the extrinsic component of CBC (base-collector capacitanc...
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Summary form only given. There are several crucial device fabrication issues that must be solved before truly advantageous SiC power devices can be realized experimentally. Progress in the fabrication of experimental high-voltage epitaxial pn and Schottky junction 6H-SiC diodes is reported. Doping concentrations in 6H-SiC epilayers grown by atmospheric-pressure chemical vapor deposition have been ...
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Summary form only given. AlGaAs/GaAs and AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with excellent microwave performance are reported. An fT of 102 GHz and an fmax of 224 GHz are achieved, using selective growth of heavily C-doped GaAs layers in extrinsic base regions, in combination with a 40-nm-thick compositionally graded InGaAs base structur...
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Summary form only given. Discusses the first vertical UMOS power MOSFETs ever reported in SiC, shows the highest gain 6H-SiC BJTs (bipolar junction transistors) and thyristors ever reported, and demonstrate the high-temperature operation of these devices. Vertical power MOSFETs fabricated in 6H-SiC with a UMOS design have specific on-resistances as low as 38 mΩ-cm2 at a gate bias ...
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Summary form only given. The authors have measured the gain of InGaAs HBTs (heterojunction bipolar transistors) as a function of base doping, with Zn and Be, using MOCVD (metal-organic chemical vapor deposition), and with C, using gas source MBE (molecular beam epitaxy), in the range of 5×1018 to 8×1019. Large area devices were measured at 2 kA/cm2, whe...
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Summary form only given. Novel thermal shunt and thermal lens techniques have been used in the design of multiple-emitter AlGaAs/GaAs power HBTs (heterojunction bipolar transistors). Thermal stabilization was achieved by the use of a thick metal bridge connecting all emitters. The thickness of the bridge was designed to assure a virtual thermal short between emitters. The use of such a thermal shu...
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Summary form only given. The authors present excimer-laser-crystallized poly-Si TFTs (thin-film transistors) with a field-effect mobility of greater than 600 cm2/Vs, which is more than 50% higher than the best value reported to date. The TFT structure, the novel process, and the mechanism for the superior TFT performances are discussed. The results obtained indicate that reduction of he...
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Summary form only given. The propagation delay times were improved up to two times in deep-submicron CMOS/SIMOX ring oscillators by reducing the poly-Si gate thickness (tm). The measured power dissipations with 0.1- to 0.25-μm gate length are under 1.5 fJ, while theoretical minimum power dissipations can be reduced down to 0.1 fJ for 0.15-μm gate length at a supply voltage of 1.5 ...
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It is pointed out that among the large variety of heterostructure field effect transistors, multichannel devices present a particular originality: their transconductance profile is very flexible and depends on the structure parameters. They are therefore suited for high signal nonlinear applications. The specific case of double quantum-well structures is studied. Conventional and pseudomorphic dev...
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Summary form only given. The authors report on the generation of short optical pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that optical pulses as short as 39 ps h...
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Summary form only given. AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) with three different InP collector dopings of 1.4×1016, 2.4×1016, and 3×10 16 cm-3 and a collector thickness of 0.75 μm have been made for microwave power applications. The DC and RF performance of the devices was found to be strongly depende...
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Summary form only given. Al0.6In0.4As Schottky layers have been combined with GaInAs/InP composite channels. The effect of changing the thickness of the Ga0.47In0.53 As channel on the DC and RF characteristics of the HEMTs was investigated. Preliminary results indicate that GaInAsP/InP composite channel HEMTs with a Ga0.47In0.53As c...
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Summary form only given. Graceful growth of technology takes place if the technology enters into the marketplace while it is in a primitive stage of development and if the technology finds wider and wider applications as it improves guided by feedback from the marketplace. Two examples of graceful growth are transistors and liquid crystal displays. They did not compete head on with existing device...
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Summary form only given. Dilute-gas plasma-enhanced chemical vapor deposition (PECVD) has been used to fabricate high-quality amorphous silicon (a-Si) thin film transistors (TFTs) which are suitable for active-matrix liquid-crystal displays. All PECVD layers were deposited using silane diluted to 2% in He or H2, which greatly reduces the explosion hazards associated with silane. The qua...
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Summary form only given. Previous work which used the Monte Carlo model DAMOCLES to explore the limits of scaling for n-channel Si MOSFETs is extended to include p-channel Si MOSFETs and quantization effects in the n-channel FETs. The previously published n-channel results (see D.J. Frank et al., 1992) have been resimulated taking into account the quantization of the electrons in the very narrow c...
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The authors point out that heteroepitaxial indium phosphide solar cells developed to date have low efficiency due to misfit dislocations. Dislocations act as recombination centers and strongly influence the solar cell performance. Calculations have been made to study the dependence of heteroepitaxial InP solar cell efficiency on dislocation density. The effects of surface recombination velocity an...
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Summary form only given. It is demonstrated that the polarization characteristics of VCSEL (vertical cavity surface emitting laser) diodes can be uniquely influenced by the geometric transverse cavity shape. The laser output polarization direction is controlled by intentionally introducing anisotropy in VCSEL diodes using novel transverse cavity shapes. Orthogonal polarization switching of the VCS...
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A modification of the continuity equations for electrons and holes in materials with deep donors or acceptors is presented. The modification is necessary in order to prevent violation of charge conservation in transient simulations. The influence of incomplete ionization of dopants on the transient characteristics of a SiC power diode is demonstrated
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Summary form only given. The authors have performed a comprehensive study of the high-frequency current gain h21 in InP-In0.53Ga0.47As HBTs (heterojunction bipolar transistors) (with an emitter area AE=3.5 μm×3.5μm and 500 Å base thickness with p-type doping level of 1×1020 cm-3) over the t...
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Summary form only given. AFPMs (asymmetric Fabry-Perot modulators) with good DC operating characteristics (20 dB contrast, 1.5 dB insertion loss) which also are capable of operating in the mm-wave regime have been designed and fabricated. Measurements are presented attesting that these AFPMs roll off at 37 GHz, a speed far higher than that of any other transverse modulators to date and competitive...
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Summary form only given. A systematic study of the improvement of Ga0.47In0.53As/Alx In1-xAs HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga0.47In0.53As/Alx In1-xAs on InP d...
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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.