The complete set of elastic moduli of Cd₀.₂Hg₀.₈Te was obtained. Taking into account elastic moduli found for Cd₀.₂Hg₀.₈Te and appropriate literary data for CdTe the anisotropy of velocities of volume and Rayleigh waves ...

Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r ...

The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the ...

The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns ...

We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer ...

Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...

Group and phase velocities of the lowest orders of Lamb waves in <100>, <110> directions for (100) Cd₀.₂Hg₀.₈Te plates are calculated. Frequency dispersion of a₀ and s₀ Lamb modes velocities were measured on (111)-plates ...

Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx ...

Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...

Methodical approaches to the analysis of X-ray data for GaN films grown on
various buffer layers and different substrates are presented in this work. Justification of
dislocation structure investigation by various methods ...