Silicon Heterostructure INtersubband Emitters

Dettagli del progetto

Costo totale:

Contributo UE:

Coordinato in:

Argomento (i):

Meccanismo di finanziamento:

CSC - Cost-sharing contracts

Obiettivo

It is the aim of the proposal to investigate and demonstrate an infrared Si/SiGe quantum cascade laser. While the indirect bandgap of silicon prohibits efficient recombination of electrons and holes, inter subb and electroluminescence has been demonstrated by Si/SiGe cascade structures. Theoretical modelling will be used to design parallel and perpendicular injection structures aimed at producing light amplification / gain. Laser cavities and waveguides will also be investigated before being combined with again medium to demonstrate a laser. It is the aim of the proposal to investigate and demonstrate an infrared Si/SiGe quantum cascade laser. While the indirect bandgap of silicon prohibits efficient recombination of electrons and holes, inter subb and electroluminescence has been demonstrated by Si/SiGe cascade structures. Theoretical modelling will be used to design parallel and perpendicular injection structures aimed at producing light amplification / gain. Laser cavities and waveguides will also be investigated before being combined with again medium to demonstrate a laser.

OBJECTIVESThe main objective of the project is to demonstrate an infrared Si/SiGe quantum cascade laser. Epitaxially grown Si/SiGe heterostructures will be fabricated into devices for infrared spectroscopic investigations and to facilitate measurements using the free electron laser. This will allow determination of the energy spacing and subband lifetimes in the quantum wells. Parallel and perpendicular injection mechanisms will be studied with a number of different schemes for light amplification / gain including negative effective mass and LO phonon resonant depopulation. Laser cavities and waveguides will be designed and tested. At all stages theoretical modelling will strongly interact with experimental results to allow efficient design of appropriate devices. Finally an infrared Si/SiGe quantum cascade laser will be designed, grown, fabricated and characterised.