power MOSFET with channel built into U-shaped trench etched into semiconductor substrate; extension of the VMOS concept; features lower than other power MOSFETs (DMOS, VMOS) on-resistance.

V-MOSFEF, VMOS

one of the discrete vertical-channel power MOSFET structures; in VMOSFET channel is built around V-shaped groove etched (employing preferential etching technique)in silicon substrate; problems with reproducibility of manufacturing process and very high electric field at the tip of the groove; alternative technologies: DMOSFET and UMOSFET.