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Abstract

Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.

Fluorescence timetraces of single SiV centers (a) SiV center with fully photostable emission (emitter ND4, excited at 695 nm). (b) Emitter with destabilization at higher excitation power and permanent photobleaching (emitter NI1). (c) Emitter with longer time intervals of fluorescence intermittence (emitter NI6). The count rate of each emitter has been calculated in time windows of 100 ms for the lowest excitation power (50 ms for higher excitation powers).

Emissions characteristics of a point-like oscillating dipole in vacuum near an Ir surface for orientation parallel (blue solid curves) and perpendicular (red dashed curves) to the interface. The emission wavelength is 740 nm and the intrinsic quantum yield is 5%. (a) Effective quantum yield as a function of distance from the Ir surface. (b) Radiation pattern for a dipole located 80 nm above the Ir surface. The thin curves refer to a dipole in free space. (c) Collection efficiency as a function of distance for a microscope objective with NA=0.8.

Tables (2)

Table 1 Rate coefficients deduced from the limiting values of a, τ1 and τ2 using the three level model including intensity dependent de-shelving and parameters c and σ obtained from the fits. For comparison also Psat is given.

Metrics

Table 1

Rate coefficients deduced from the limiting values of a, τ1 and τ2 using the three level model including intensity dependent de-shelving and parameters c and σ obtained from the fits. For comparison also Psat is given.

k21 (MHz)

k23 (MHz)

k310(MHz)

d (MHz)

σ (MHz/μ W)

c (μ W)

Psat (μ W)

ND1

4408

137.0

0.27

18.6

12.0

11.9

30.6

ND2

3424

24.6

1.7

24.4

8.9

177

167

ND3

771

23.3

0.35

24.7

5.7

57

105.3

ND4

1084

31.7

0.12

13.1

7.0

2743

282

NI1

3479

92.6

0.82

45.5

4.2

1067

692

NI7

1638

1.5

0.16

0.7

7.2

300

46.9

Table 2

Rate coefficients ki j, maximum excited state population
N2∞ (P → ∞), maximum photon rate I∞ and quantum efficiency ηqe for individual SiV centers. To calculate the quantum efficiency, we use a collection efficiency of 78% (28%) for a parallel (perpendicular) dipole, corresponding to an emitter distance of 75 nm.

k21 (MHz)

k23 (MHz)

k310(MHz)

d (MHz)

N2∞(P→∞)

I∞ (Mcps)

ηqe||(%)

ηqe⊥(%)

ND1

4408

137

0.27

18.6

0.12

0.84

0.8

2.2

ND2

3424

24.6

1.7

24.4

0.51

1.53

0.4

1.2

ND3

771

23.6

0.35

24.7

0.51

2.46

3.2

8.9

ND4

1084

31.7

0.12

13.1

0.29

2.06

3.3

9.2

ND5

1545.1

17.4

1

11.9

0.43

2.39

1.9

5.2

ND6

770.1

11.1

0.79

5.65

0.37

0.78

1.4

3.9

ND7

1053.6

21.7

0.11

3.44

0.14

0.59

2.1

5.7

NI1

3479

92.6

0.82

45.5

0.33

6.24

2.8

7.7

NI3

161

7.3

0.24

11.9

0.62

0.17

0.9

2.4

NI7

1638

1.5

0.16

0.7

0.36

0.34

0.3

0.8

NI8

2487

12.5

0.15

5.3

0.30

0.9

0.6

1.7

NI9

1181.7

1.8

0.21

3.1

0.65

3.82

2.6

7.1

NI10

798.8

34.6

0.22

16.2

0.32

0.8

1.6

4.4

NI11

1076

13.3

0.32

8.2

0.39

0.52

0.6

1.8

Tables (2)

Table 1

Rate coefficients deduced from the limiting values of a, τ1 and τ2 using the three level model including intensity dependent de-shelving and parameters c and σ obtained from the fits. For comparison also Psat is given.

k21 (MHz)

k23 (MHz)

k310(MHz)

d (MHz)

σ (MHz/μ W)

c (μ W)

Psat (μ W)

ND1

4408

137.0

0.27

18.6

12.0

11.9

30.6

ND2

3424

24.6

1.7

24.4

8.9

177

167

ND3

771

23.3

0.35

24.7

5.7

57

105.3

ND4

1084

31.7

0.12

13.1

7.0

2743

282

NI1

3479

92.6

0.82

45.5

4.2

1067

692

NI7

1638

1.5

0.16

0.7

7.2

300

46.9

Table 2

Rate coefficients ki j, maximum excited state population
N2∞ (P → ∞), maximum photon rate I∞ and quantum efficiency ηqe for individual SiV centers. To calculate the quantum efficiency, we use a collection efficiency of 78% (28%) for a parallel (perpendicular) dipole, corresponding to an emitter distance of 75 nm.