Abstract

Channeling measurements with MeV 4He ions were used to investigate the disorder distributions produced in 〈111〉 and 〈100〉 Si samples by implantation at substrate temperatures from −180 to 300 °C. The results indicate that for high implantation doses (1015–1016 ions/cm2) a deep stable disordered region is present in both orientations for the samples implanted at temperatures above room temperature but is absent for room‐temperature and lower implants. The colors that have been observed on the surface of samples with similar implants are found to be correlated with the thickness of a thin crystalline layer at the surface.