Abstract

We report on experimental studies of high electron mobility transistor(HEMT)structuresgrown on -type Si (111) substrates. By introducing an ultrathin SiN layer during the crystal growth, the Hall mobility of the HEMTstructure can be greatly enhanced (greater than three times). This SiN treatment technique also allows the observation of Shubnikov–de Haas oscillations which is not possible in the untreated HEMTstructure. Our experimental results pave the way for the integration of HEMTstructures with the mature Si technology in industry.

Received 28 June 2006Accepted 02 August 2006Published online 26 September 2006

Acknowledgments:

This work was funded by the NSC, Taiwan. The authors thank Y. H. Chang, S. C. Chen, W. C. Lien, C. F. Shih, K.-T. Wu, and Y. H. Wu for their invaluable help at the early stage of this work. One of the authors (C.T.L.) acknowledges L.-H. Lin for his experimental assistance.