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TOC Alert for Publication# 2197 2008April 1415362752755515362762792710), the high-reflection (HR) coating and p-type modulation doping have been incorporated with the HGTSL technique. A very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A cm-2 are achieved for a three-layer device with a 1 mm HR/HR cavity, while a very low threshold current density of 48 A cm-2 and a negative T0 are achieved in the p-doped lasers]]>15362802833151536284286911536287292309153629329830915362993073511536308311317153631231514415363163203630 is increased from 51 to 65 K (20-70degC) for the expanded mode structure for 320-mum long devices with uncoated facets. It is also found that zinc or magnesium can be used interchangeably for the p-dopant in a given structure without any impact on device performance]]>153632132526115363263293871536330337447