The K4M513233C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications

Applications:

• 3.0V & 3.3V power supply.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA

Specifications:

part no.

K4M513233C-DN75

Manufacturer

SAMSUNG

supply ability

1920

datecode

07+

package

BGA

remark

new and original stock

PART NO

QTY

MFG

Package

MC74HC595ADTR2G

10000

ON

TSSIP

MC74HC165ADTR2G

7800

ON

TSSOP

LM4871MM

4000

NS

MSOP

ADXL335BCPZ

22000

AD

LFCSP-16

PIC16F648A I/P

30000

MICROCHIP

DIP

88SA8040B1-NNC1C000

20000

MARVELL

QFN

DF08M

45000

SEP

DIP

FR9618SPCTR

10000

FR

SOP-8

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