Ultra low k dielectrics for ULSI interconnects

The modern ULSI technology requires interconnects with less and less dielectric constant. Though modern dielectrics demonstrate k = 2.5 the materials with k < 2 are required by the industry

Technology:

We developed a new ultra low-k dielectric material, which is a combination of inorganic nanoparticles with voids inside and the highly fluorinated polymers. This combination allowed us to obtain materials with the k (dielectric constant) < 2. The technology is spin-on and compatible with modern ULSI manufacture technology. Also our material possesses mechanical and thermal durability and low copper diffusion rate as well as high values of breakdown voltage and low leakage current. If implemented, it will allow the next step in the miniaturization of ULSI and is intended for the 12 nm and less integration.