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Abstract

A technology is proposed for obtaining acoustically induced storage in piezoelectric semiconductors, in a manner that eliminates one of the two radio-frequency cavities presently required for the technology described in the IBM Technical Disclosure Bulletin, Vol. 18, No. 7, December 1975, pages 2356 to 2359, and permits random access of small regions of the crystal thereby increasing the storage capacity over that presently available.

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United States

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English (United States)

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Multichannel, Random Access Acoustic Echo Storage Memory

A technology is proposed for obtaining acoustically induced storage in
piezoelectric semiconductors, in a manner that eliminates one of the two radio-
frequency cavities presently required for the technology described in the IBM
Technical Disclosure Bulletin, Vol. 18, No. 7, December 1975, pages 2356 to
2359, and permits random access of small regions of the crystal thereby
increasing the storage capacity over that presently available.

Small thin films are deposited in an array on the front surface of the
piezoelectric crystal. Each film segment can serve as a separate channel of
information. A pulsed laser beam is directed on the film segment from a scanner
thereby allowing random access of the film. The purpose of the beam is to
rapidly heat the individual film segment, thereby causing a pulse of radio-
frequency phonons to be generated. These phonons are used to write in the
information as well as to read out any information already stored there, in
conjunction with the radio-frequency pulse at the opposite end.

The physical principle of the generation of the phonons using the laser pulsed
has been described in R. M. White, JAP 34, 3559 (1963), and results from the
rapid heating and cooling of the thin-film segment which gives rise to the
launching of an acoustic wave with frequency components centered about 1/T,
where T is the laser pulse width (or the pulse width of the heating and cooling of
the film)...