2014年1月4日星期六

Microsemi is targetting power-over-Ethernet designs with a diode bridge based on a dual pack of mosfet-based full-bridge rectifiers.

The device’s mosfets have an R(DS) of 0.16ohm, which will keep efficiency and output power high for power-over-Ethernet (PoE) and power-over-HDBaseT (PoH) applications including wireless LAN access points, small cells and small switches/routers.

“In PoE- and PoH-powered solutions when high-efficiency or high-power was required, system designers were used to implementing their designs using discrete components. This highly integrated solution dissipates less power, simplifies the customer’s design and saves printed circuit board space,” said Iris Shuker, PoE product line manager for Microsemi.

Microsemi’s PD70224 can support over 1A of current in two-pair applications compliant with IEEE802.3af and IEEE802.3at, but also for four-pair powered devices using Universal PoE (up to 51W) and PoH (up to 95W).

The entire drive circuitry for driving the mosfets is on-chip, including a charge pump for driving the high-side N-channel mosfets.

The total forward drop (bridge offset) introduced by the ideal bridge rectifier is only 192mV at 0.6A, compared to a standard bridge rectifier that typically presents 2,000mV of forward drop.

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