Abstract

Nanopantography, a massively parallel nanopatterning method over large areas, was previously shown to be capable of printing 10 nm features in silicon, using an array of 1000 nm-diameter electrostatic lenses,fabricated on the substrate, to focus beamlets of a broad area ion beam on selected regions of the substrate. In the present study, using lens dimensional scaling optimized by computer simulation, and reduction in the ion beam image size and energy dispersion, the resolution of nanopantography was dramatically improved, allowing features as small as 3 nm to be etched into Si.

This work was supported by the National Science Foundation grants CMMI 1030620 and IIP 1343387, and the Department of Energy, Office of Fusion Energy Science. We also acknowledge Dr. L. Chang and Dr. J. Guo of the UH Nanofabrication Facility for their help with lens fabrication.

[Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof, Manufacture or treatment of devices consisting of
a plurality of solid state components or integrated circuits formed in or on a common
substrate or of specific parts thereof; Manufacture of integrated circuit devices or of
specific parts thereof]