Abstract

The investigation of single layer halftone phase shift mask (SLHTPSM) has been carried by both simulation and chromium fluoride film fabrication. Theoretical analysis provides the optimum SLHTPSM constructions for I-line (365 nm), KrF (248 nm) and ArF (193 nm) microlithographies. A fully characterization of chromium fluoride film processed by de magnetron sputtering shows a feasibility of using this film in the fabricating DUV-PSM.