Abstract

Ultrathin TaSiC amorphousfilms prepared by magnetron cosputtering using and C targets on Si(100), in a sandwiched scheme , were evaluated for barrier performance in copper metallization. Optimizing carbon content maximizes thermal stability of the films as depicted by sheet-resistance, x-ray diffraction, and transmission electron microscopy examination. The stability temperatures of ( C) and ( C) have been systematically verified and discussed. Since Ta, Si, and C are compatible with integrated circuit (IC) processing, the TaSiC films are readily applicable for sub- IC production.