Abstract

Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10-6 Ωcm range can be reproducibly obtained directly on Si substrates.

abstract = "Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10-6 Ωcm range can be reproducibly obtained directly on Si substrates.",

author = "Sun, {Wen Cheng} and Xiaofei Han and Meng Tao",

year = "2015",

doi = "10.1149/2.0021504eel",

language = "English (US)",

volume = "4",

pages = "D5--D7",

journal = "ECS Electrochemistry Letters",

issn = "2162-8726",

publisher = "The Electrochemical Society",

number = "4",

}

TY - JOUR

T1 - Electroplating of aluminium on silicon in an ionic liquid

AU - Sun, Wen Cheng

AU - Han, Xiaofei

AU - Tao, Meng

PY - 2015

Y1 - 2015

N2 - Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10-6 Ωcm range can be reproducibly obtained directly on Si substrates.

AB - Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3- methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10-6 Ωcm range can be reproducibly obtained directly on Si substrates.