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Abstract

We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.

Figures (4)

Schematics of laser setup: The laser cavity is formed of the gain mirror and three high reflective curved mirrors. Frequency doubled emission was observed from the outputs of mirrors M2 and M3. RoC=Radius of Curvature, D=distance between adjacent mirrors, BBO=barium borate crystal