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SUMMARY:Integrated CMOS sensor technologies for the CLIC tracker
DTSTART;VALUE=DATE-TIME:20170525T011800Z
DTEND;VALUE=DATE-TIME:20170525T013600Z
DTSTAMP;VALUE=DATE-TIME:20190525T160523Z
UID:indico-contribution-73@cern.ch
DESCRIPTION:Speakers: MUNKER\, Magdalena (CERN\, Geneva\, Switzerland)\nTh
e tracking detector at the proposed high-energy CLIC electron-positron col
lider will be based on small-pitch silicon pixel- or strip sensors arrange
d in a multi-layer barrel and end-cap geometry with a total surface of abo
ut 90 sqm. The requirements include single-point position resolutions of a
few microns and time stamping with an accuracy of approximately 10 ns\, c
ombined with a low material budget of less than 2% of a radiation length p
er layer\, including cables\, cooling and supports. Mainly fully integrate
d CMOS sensors are under consideration. One of the candidate technologies
is based on a 180 nm CMOS process with a high-resistivity substrate. Test
beam measurements and TCAD simulations were performed for demonstrator chi
ps consisting of an array of analog pixel matrices with different pixel pi
tch and a variety of collection-electrode geometries and process options.
The analog signals of each matrix are read out by external sampling ADCs\,
allowing for a precise characterisation of the signal response. In this c
ontribution we present the sensor design and show results from recent test
-beam campaigns\, as well as comparisons with TCAD simulations. The result
s show good spatial and timing resolution in line with the requirements fo
r the CLIC tracker.\n\nhttps://indico.ihep.ac.cn/event/6387/session/45/con
tribution/73
LOCATION:Beijing International Convention Center Room 307
URL:https://indico.ihep.ac.cn/event/6387/session/45/contribution/73
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