tunnel diode GaAs

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Abstract: , incorporates a monolithically integrated p/n GaAs bypass diode. This cell is called the ATJM. Using the ATJM , GaAs layers on the surface of the ATJ cell. The monolithically integrated GaAsdiode protects the cell , , the additional p/n GaAsdiode layers are removed from the active surface areas of the cell, except , ATJ with a monolithically integrated diode (ATJM) solar cells for space flight applications. The , . These multi-junction cells are of n/p polarity and are composed of InGaP/(In)GaAs III-V compounds ...

Abstract: metal-insulator-semiconductor (MIS) tunneldiode at equilibrium, although the insulator, in this case the InGaP, has a bandgap , manufacturing environment. INTRODUCTION InGaP/GaAs heterojunction bipolar transistors (HBT) are widely used , . CONVENTIONAL METHOD The use of Schottky contacts on InGaP/GaAs heterostructures is ubiquitous in the gate , layer adjacent to the InGaP is a highly doped p+ GaAs base instead of the AlGaAs or ndoped GaAs used , Schottky and one heterojunction compared with just a Schottky diode in the common case. Our attempts to ...