Abstract

InAs self-assembledquantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorptionmeasurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.