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Abstract:

In at least one embodiment of the semiconductor laser light source, the
latter includes a carrier and at least two semiconductor lasers. The
semiconductor lasers are mounted on a carrier top. The semiconductor
laser light source furthermore includes at least one optical component,
which is arranged downstream of at least one of the semiconductor lasers
in a direction of emission. The semiconductor lasers and the optical
component are housed tightly in a common enclosure by way of a cover. The
dimensions of the enclosure, viewed in three orthogonal spatial
directions, amount in each case to at most 8 mm×8 mm×7 mm.

Claims:

1. A semiconductor laser light source comprising: a carrier with a
carrier top, a plurality of semiconductor lasers, the semiconductor
lasers being mounted on the carrier top, at least one optical component
arranged downstream of at least one of the semiconductor lasers in a
direction of emission wherein the optical component is designed to
superimpose partial beams emitted by the semiconductor lasers and to
bring them together into a whole beam, and a cover, overlying the
semiconductor lasers and the optical component such that the
semiconductor lasers and the optical component are housed tightly in a
common housing and the dimensions of an enclosure containing the
semiconductor lasers and the optical component amount to at most 8
mm×8 mm×7 mm.

2. The semiconductor laser light source according to claim 1, wherein the
optical component is arranged jointly and directly optically downstream
of the semiconductor lasers.

3. The semiconductor laser light source according to claim 1, wherein the
optical semiconductor lasers are designed to emit radiation of the same
wavelength and with different polarization directions, and the radiation
form the lasers being superimposed by the optical component to form a
common beam.

4. The semiconductor laser light source according to claim 1, wherein the
optical component does not reduce divergence of the partial beams or of
the whole beam, and wherein the semiconductor laser light source further
comprises a lens arranged downstream of the optical component.

5. The semiconductor laser light source according to claim 1, wherein the
semiconductor laser light source is mechanically and/or electrically
surface-mountable, and wherein, when viewed in plan view, each
semiconductor laser extends over at least two electrical conductor tracks
on the carrier top.

6. The semiconductor laser light source according to claim 1, wherein
each of the semiconductor lasers is contacted electrically and
mechanically without bonding wire with two respective electrical
conductor tracks on the carrier top.

7. The semiconductor laser light source according to claim 6, wherein the
electrical conductor tracks on the carrier top are electrically connected
to corresponding conductor tracks on a carrier bottom that is opposite
the carrier top and wherein the conductor tracks on the carrier bottom
are designed for surface mounting of the semiconductor light source.

8. The semiconductor laser light source according to claim 1, further
comprises an imaging optical system mounted on the carrier top.

9. The semiconductor laser light source according to claim 1, further
comprising: a proximity sensor on the carrier top, the proximity sensor
designed to detect an object in an image field of the semiconductor laser
light source, and safety control electronics designed to reduce output
power of the semiconductor lasers as a function of a signal from the
proximity sensor, and wherein the proximity sensor is located on the back
of the imaging optical system, the back being opposite a front of the
imaging optical system, wherein the front reflects the whole beam.

10. The semiconductor laser light source according to claim 9, further
comprising driver electronics for the semiconductor lasers, an electronic
driver for the imaging optical system and a video signal processing unit
located on the carrier top and/or on a mounting support on which the
carrier is mounted.

11. The semiconductor laser light source according to claim 9, wherein
the proximity sensor detects part of the whole beam reflected by the
object.

12. The semiconductor laser light source according to claim 1, further
comprising precisely one monitor diode, designed for active re-adjustment
of the semiconductor lasers, the diode being mounted on the optical
component, a fraction of each of partial beams emitted by the
semiconductor lasers is guided through the optical component to the
monitor diode.

13. The semiconductor laser light source according to claim 1, wherein at
least one of the semiconductor lasers comprises a semiconductor body that
comprises top face metallization on a major face remote from the carrier
top, which metallization extends at least 50% of the way along a
longitudinal direction of the semiconductor body, wherein the top face
metallization is connected conductively via side face metallization,
which is applied to a longitudinal side of the semiconductor body, to one
of the electrical conductor tracks on the carrier top.

14. The semiconductor laser light source according to claim 1, wherein at
least one of the semiconductor lasers comprises a semiconductor body that
comprises top face metallization on a major face remote from the carrier
top, wherein the metallization extends at least 50% of the way along a
longitudinal direction of the semiconductor body, wherein the top face
metallization is connected conductively by way of vias through the
semiconductor body to an electrical conductor track on the carrier top.

15. The semiconductor laser light source according to claim 8, wherein a
lens, the imaging optical system and a monitor diode are arranged in the
enclosure.

16. A semiconductor laser light source comprising: a carrier with a
carrier top, a plurality of semiconductor lasers mounted on the carrier
top, conductor tracks on the carrier top, an optical component arranged
downstream of at least one of the semiconductor lasers in a direction of
emission, and a cover, wherein the semiconductor lasers and the optical
component are housed tightly in a common enclosure by the cover, wherein
the dimensions of the enclosure amount to at most 8 mm×8 mm×7
mm, wherein the optical component is designed to superimpose partial
beams emitted by the semiconductor lasers and to bring them together into
a whole beam, wherein each of the semiconductor lasers is contacted
electrically and mechanically without bonding wire to at least two
corresponding electrical conductor tracks on the carrier top, wherein
each semiconductor laser overlaps partially with its respective conductor
track, wherein the optical component is arranged jointly and directly
optically downstream of all of the semiconductor lasers, and wherein a
distance between the optical component and the semiconductor lasers is at
most 600 μm.

17. A semiconductor laser light source according to claim 16, wherein the
semiconductor laser light source comprises three the semiconductor
lasers, wherein the optical component comprises a prism, wherein a
planar, first major face of the optical component faces a first one of
the semiconductor lasers, wherein the remaining semiconductor lasers are
arranged obliquely to the first semiconductor laser and face a planar,
second major face of the optical component, and wherein the second major
face is oriented parallel to the first major face.

18. The semiconductor laser light source according to claim 8, wherein
the imaging optical system comprises a micro-electromechanical minor
designed for projection of the whole beam to form a time-variable image.

19. The semiconductor laser light source according to claim 8, wherein
the imaging optical system comprises a diffractive optical element, which
is designed for projection of the whole beam to form a time-invariable
image.

20. The semiconductor laser light source according to claim 9, wherein
the proximity sensor comprises a semiconductor light source emitting in
the near infrared spectral range and detects a part of this emitted
radiation reflected by the object.

Description:

[0001] This patent application is a national phase filing under section
371 of PCT/EP2011/054239, filed Mar. 21, 2011, which claims the priority
of German patent application 10 2010 012 604.7, filed Mar. 24, 2010, each
of which is incorporated herein by reference in its entirety.

[0004] One aspect of the invention provides a semiconductor laser light
source of small geometric dimensions.

[0005] According to at least one embodiment of the semiconductor laser
light source, the latter comprises a carrier with a carrier top. The
carrier takes the form for example of a metal core printed circuit board
or a printed circuit board. The carrier preferably exhibits an average
specific thermal conductivity of at least 80 W/mK.

[0006] According to at least one embodiment of the semiconductor laser
light source, the latter includes at least one or at least two
semiconductor lasers, which are designed to generate visible radiation
and are mounted on the carrier top of the carrier. Semiconductor laser
means that the radiation emitted by the laser is generated in a
semiconductor body. The term semiconductor laser preferably means that no
frequency conversion stage, which converts one wavelength of radiation
generated in the semiconductor body into another wavelength, is arranged
downstream of the semiconductor body of the semiconductor laser. In other
words, the at least one semiconductor laser is preferably a component
which directly emits the desired wavelength.

[0007] According to at least one embodiment of the semiconductor laser
light source, the latter comprises a semiconductor laser emitting in the
red spectral range, a semiconductor laser emitting in the green spectral
range and a semiconductor laser emitting in the blue spectral range. The
semiconductor laser light source thus contains at least three
semiconductor lasers emitting in particular directly in the corresponding
spectral ranges.

[0008] According to at least one embodiment of the semiconductor laser
light source, an optical component is arranged downstream of at least one
of the semiconductor lasers, preferably all the semiconductor lasers
together, in a direction of emission. By means of the optical component,
it is in particular possible for partial beams emitted by each of the for
example three semiconductor lasers of the semiconductor laser light
source to be combined into a whole beam, i.e., beam combination may
preferably be achieved by means of the optical component. Whole beam
means in particular that all cross-sections of the partial beams overlap
and that the partial beams extend in the same direction. The same
direction means preferably that paired overlap of the cross-sections of
the partial beams from the semiconductor laser light source as far as for
example to a projection surface amounts to at least 50% or at least 75%.

[0009] According to at least one embodiment of the semiconductor laser
light source, the latter comprises a cover. The cover and the carrier
substantially define an enclosure. The enclosure is sealed tightly, in
particular gas-tightly. Tightly means that over the service life of the
semiconductor laser light source no or no significant gas exchange takes
place between the interior of the enclosure and a region outside the
enclosure. Tightness for the purposes of the present application may be
achieved in particular in that the cover is connected by way of a metal
solder, by way of a glass solder or by way of a weld seam to the carrier
or to a housing frame. The enclosure is preferably evacuated or is filled
with a noble gas, with nitrogen or with dried air.

[0010] According to at least one embodiment of the semiconductor laser
light source, the at least one semiconductor laser, particularly
preferably all the semiconductor lasers, and the optical component are
located in the enclosure and are jointly housed. In other words, the
above-stated components are in the immediate spatial vicinity of one
another and are preferably not separated from one another by barriers of
solid materials.

[0011] According to at least one embodiment of the semiconductor laser
light source, the dimensions of the enclosure amount to at most 8
mm×8 mm×7 mm, in particular at most 5 mm×5 mm×4
mm, preferably at most 3 mm×3 mm×4 mm, particularly
preferably at most 2.5 mm×2.5 mm×3 mm. The smallest value
here indicates in particular the height above the carrier top. In other
words, the enclosure may be completely surrounded by a cuboid of the
stated dimensions. Alternatively or in addition, the size of the
enclosure amounts at most to 400 mm3, in particular at most to 100
mm3, preferably at most to 30 mm3, particularly preferably at
most to 12 mm3. Furthermore, the base area of the enclosure on the
carrier top alternatively or additionally measures at most 60 mm2,
in particular at most 25 mm2, preferably at most 10 mm2,
particularly preferably at most 6 mm2.

[0012] In at least one embodiment of the semiconductor laser light source,
the latter comprises a carrier with a carrier top and at least two
semiconductor lasers, in particular in each case at least one
semiconductor laser emitting in the red, at least one in the green and at
least one in the blue spectral range. The semiconductor lasers are
mounted on the carrier top. The semiconductor laser light source
furthermore comprises at least one optical component, which is arranged
downstream of at least one, preferably all of the semiconductor lasers in
a direction of emission. The semiconductor lasers and the optical
component are housed tightly in a common enclosure by way of a cover. The
dimensions of the enclosure, viewed in three orthogonal spatial
directions, amount in each case to at most 8 mm×8 mm×7 mm.

[0013] Since the dimensions of the semiconductor laser light source
correspond substantially to those of the enclosure, a particularly
compact semiconductor laser light source may be achieved by mounting the
semiconductor laser and the optical component jointly in the enclosure.
The compactness of the semiconductor laser light source may be
additionally increased by various combinations of further measures. Such
measures are in particular the design of the semiconductor lasers, the
arrangement and development of the optical component and guidance of
electrical supply lines on the carrier and the manner of contacting the
semiconductor lasers.

[0014] Further components, such as an imaging unit and safety devices, may
likewise be mounted compactly at least indirectly on the carrier or on
the enclosure. By the various measures for making the semiconductor laser
light source more compact, the latter may be used for example as a
projection unit in compact, portable equipment such as mobile telephones
or small computers. The semiconductor laser light source may be used in
particular to generate polychromatic light, preferably white light.

[0015] According to at least one embodiment of the semiconductor laser
light source, the optical component is arranged jointly and optically
directly downstream of the semiconductor lasers. Optically directly
downstream means that no further optically active components are located
between a radiation exit face of the respective semiconductor laser and a
radiation entrance face of the optical component. In particular, no lens,
in particular no "fast-axis collimating lens" is mounted between the
semiconductor laser and the optical component in a beam path of the
partial beams emitted in each case by the semiconductor lasers. Due to
the only small distance between the optical component and the
semiconductor lasers, it is possible to dispense with additional lenses
in addition to the optical component inside the enclosure. In this way,
the compactness of the semiconductor laser light source may be increased
and a particularly small enclosure achieved.

[0016] According to at least one embodiment of the semiconductor laser
light source, the optical component is not designed to reduce the
divergence of partial beams, which are emitted by the semiconductor
lasers, or the divergence of a whole beam, which is formed by the
superimposed partial beams. In other words, the optical component does
not serve to focus the radiation, but instead preferably solely to
combine the partial beams into the whole beam. The optical component
comprises for example solely planar shaped radiation entrance faces and
radiation exit faces.

[0017] According to at least one embodiment of the semiconductor laser
light source, a lens which is in particular not rotationally symmetrical
in shape or an optical system comprising a plurality of lenses is
arranged downstream of the optical component. The lens may be mounted
directly on the optical component, for example via a bonding agent or
welding. Preferably, however, the optical component is mounted outside
the enclosure, for example on the cover. The lens or the optical system
is in particular designed to reduce the divergence of the whole beam. The
ellipticity of the beam cross-section of the whole beam is preferably
less than 4, in particular less than 2, depending on the lens or the
optical system.

[0018] According to at least one embodiment of the semiconductor laser
light source, the lens or the optical system is designed to generate a
linear beam cross-section of the whole beam. The ellipticity of the beam
cross-section then amounts in particular to at least 10 or at least 20.
For example, the semiconductor laser light source may then be used in a
scanner or in a scanning unit.

[0019] According to at least one embodiment of the semiconductor laser
light source, the latter comprises at least two semiconductor lasers,
which emit radiation of the same wavelength. In particular the
semiconductor laser light source comprises a laser bar with a plurality
of semiconductor lasers, which emit radiation at the same wavelength.

[0020] According to at least one embodiment of the semiconductor laser
light source, at least two of the partial beams emitted by the
semiconductor lasers are differently polarized. The optical component is
then preferably a polarization-selective element, such that combining
partial beams in particular of the same wavelength may proceed by
exploiting the different polarizations of the partial beams.

[0021] According to at least one embodiment of the semiconductor laser
light source, the cover comprises a light exit disc, which is oriented
obliquely to the carrier.

[0022] An angle α between the carrier and the light exit disc is
preferably between 45° and 85° inclusive.

[0023] According to at least one embodiment of the semiconductor laser
light source, the latter is mechanically and/or electrically
surface-mountable and/or surface-contactable. For example, the
semiconductor laser light source may be attached by soldering to a
mounting support by way of a carrier bottom remote from the carrier top.
By way of the for example soldered joint, the semiconductor laser light
source is connected mechanically and preferably thermally to the mounting
support. If the carrier bottom is patterned and electrical conductor
tracks are located on the carrier bottom, electrical contacting of the
semiconductor laser light source may also take place at the same time as
the mechanical and thermal connection. The semiconductor laser light
source is contacted in particular without a bonding wire. By economising
on bonding wires, the space requirement of the semiconductor laser light
source may be reduced and a particularly small enclosure and low
structural height may be achieved.

[0024] According to at least one embodiment of the semiconductor laser
light source, one or all of the semiconductor lasers are electrically and
mechanically contacted without bonding wires in the enclosure with in
each case at least two electrical conductor tracks on the carrier top.
Contact points for bonding wires typically have a comparatively large
space requirement of around 2500 μm2. The bending radii needed by
bonding wires also makes a minimum component height necessary, which is
markedly greater than the structural height of the semiconductor lasers
themselves. Because the semiconductor lasers are contacted without
bonding wires, the semiconductor laser light source may be of more
compact construction and a particularly small enclosure may be achieved.

[0025] According to at least one embodiment of the semiconductor laser
light source, the electrical conductor tracks are connected on the
carrier top by way of vias to electrical conductor tracks on the carrier
bottom. In particular, the carrier bottom is then designed for surface
mounting of the semiconductor laser light source. Such conductor tracks
allow space-saving construction of the semiconductor laser light source.
In particular, it is possible to dispense with electrical contacting
regions to external, electrical wiring on the carrier top.

[0026] According to at least one embodiment of the semiconductor laser
light source, an imaging optical system are mounted on the carrier top of
the carrier or on the top of an intermediate carrier on which the carrier
is mounted. The imaging optical system comprise for example a
micro-electromechanical minor, or MEMS minor for short, or a diffractive
optical element, or DOE for short. A DOE comprises an optical diffraction
grating and is designed in particular to produce an image which does not
vary over time, for example a logo.

[0027] According to at least one embodiment of the semiconductor laser
source, the latter comprises at least one proximity sensor. The proximity
sensor is mounted space-savingly on the carrier top of the carrier or on
the top of the intermediate carrier and is designed to detect objects in
the image field of the semiconductor laser light source. In addition, the
semiconductor laser light source includes safety control electronics.
These are designed to reduce the output power of the semiconductor lasers
as a function of a signal from the proximity sensor. With high maximum
semiconductor laser output powers in particular, there is a risk of
damage to the eyes of people in the image field. The risk of eye damage
may be reduced by the proximity sensor in cooperation with the safety
control electronics.

[0028] According to at least one embodiment of the semiconductor laser
light source, the semiconductor lasers are each designed to generate a
luminous flux of at least 8 lm, in particular of at least 12 lm.
Alternatively or in addition, the semiconductor laser light source is
designed to emit a luminous flux of at least 25 lm or at least 40 lm in
total. Such high luminous fluxes may be produced by the compact structure
of the semiconductor laser light source and by low thermal resistances.

[0029] According to at least one embodiment of the semiconductor laser
light source, the latter comprises at least one monitor diode, which is
designed to detect radiation emitted by the semiconductor lasers. The
monitor diode enables active power readjustment of the semiconductor
lasers, in particular colour correction of an emitted overall radiation.

[0030] Preferably the semiconductor laser light source comprises precisely
one monitor diode, which is mounted indirectly or directly on the optical
component. The precisely one monitor diode allows detection of a fraction
of the radiation from each of the partial beams emitted by the
semiconductor lasers. In other words, fractions of the radiation emitted
by the semiconductor lasers are in each case guided through the optical
component to the one monitor diode. Just one monitor diode allows
economies of components and results in a more compact semiconductor laser
light source and a particularly small enclosure.

[0031] According to at least one embodiment of the semiconductor laser
light source, at least one of the semiconductor lasers comprises a
semiconductor body, which comprises top face metallization on a major
face remote from the carrier top. The top face metallization preferably
extends at least 50% or at least 75% of the way along a longitudinal
direction of the semiconductor body. The top face metallization allows
current to be supplied to the semiconductor body. In this way, it is
possible to dispense with additional electrical contact points on the
semiconductor bodies, whereby said bodies can be of more compact
structure and whereby a particularly small enclosure may be achieved.

[0032] According to at least one embodiment of the semiconductor laser
light source, the top face metallization is connected conductively via a
side face metallization, which is applied at least in places on a
longitudinal side of the semiconductor body, to an electrical conductor
track on the carrier top of the carrier. Alternatively or in addition to
the side face metallization, openings may be created through the
semiconductor body which are filled at least partially with an
electrically conductive material and connect the top face metallization
electrically conductively to a conductor track on the carrier top.

BRIEF DESCRIPTION OF THE DRAWINGS

[0033] A semiconductor laser light source described herein is explained in
greater detail below by way of exemplary embodiments with reference to
the drawings. Elements which are the same in the individual figures are
indicated with the same reference numerals. The relationships between the
elements are not shown to scale, however, but rather individual elements
may be shown exaggeratedly large to assist in understanding.

[0036] FIGS. 5 to 6 are schematic representations of exemplary embodiments
of semiconductor lasers described herein; and

[0037]FIG. 20 is a schematic representation of an exemplary embodiment of
a cover for semiconductor laser light sources described herein.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0038]FIG. 1a is a schematic sectional representation and FIG. 1B is a
schematic plan view of an exemplary embodiment of a semiconductor laser
light source 1. The semiconductor laser light source 1 comprises a
carrier 2 with a carrier top 20 and a carrier bottom 25 opposite thereto.
Electrical conductor tracks 6a, 6b are formed on the carrier top 20 by
metallization. Three semiconductor lasers 3 are mounted on in each case
two of the conductor tracks 6a, 6b via a bonding agent 21. In the plan
view according to FIG. 1B, the semiconductor lasers 3 are merely
indicated by broken lines. The semiconductor lasers 3 each overlap
partially with the conductor tracks 6a, 6b on the carrier top 25, see
FIG. 1B. This overlap enables particularly space-saving contacting and a
particularly compact arrangement of the semiconductor lasers 3.
Furthermore, the semiconductor lasers 3 may be driven electrically
separately and mutually independently. External electrical contacting of
the semiconductor laser light source 1 proceeds via bonding wires 19. The
bonding wires 19 are mounted outside the enclosure 10 on the conductor
tracks 6a, 6b.

[0039] Metallization 7 is additionally applied to the carrier bottom 25,
which metallization preferably extends over the entirety or over the
majority of the carrier bottom 25 and via which the carrier 2 may be
connected to an external mounting support, not shown, by way of soldering
or by way of adhesive bonding. The carrier 2 preferably further exhibits
high specific thermal conductivity, such that the thermal resistance
between the semiconductor lasers 3 and the mounting support, not shown,
is low.

[0040] A housing frame 18 is optionally mounted on the carrier top 20 via
the conductor tracks 6a, 6b. A cover 5 is attached by way of a sealant 17
to the housing frame 18, which is made for example of metal or glass or
with a semiconductor material such as silicon or with a plastics
material. The cover 5 is transparent to the radiation generated by the
semiconductor lasers 3. The sealant 17 may be a metal solder, a glass
solder or a weld seam. An electrically insulating layer not shown in the
figures is mounted between the conductor tracks 6a, 6b and the housing
frame 18. If no housing frame 18 is present, the cover 5 is preferably
mounted directly on the carrier top 20 and the conductor tracks 6a, 6b or
on the electrically insulating layer, unlike in the drawing.

[0041] An enclosure 10 is surrounded in gas-tight manner by the carrier 2,
the housing frame 18 and the cover 5. The enclosure 10 is filled with
dried air or with nitrogen, for example. The semiconductor lasers 3 are
located jointly together with an optical component 4a, 4b in the
enclosure 10. The cover 5 and the optical component 4a, 4b and the
micro-electromechanical minor 11 are not shown in FIG. 1B to simplify the
illustration.

[0042] The optical component 4a, 4b is attached to the cover 5. Focusing
of radiation emitted by the semiconductor lasers 3 may be achieved by way
of part of the optical component 4a. Beam deflection and beam combination
of partial beams into a whole beam Q proceed via part of the optical
component 4b. The whole beam Q is guided to an imaging unit, embodied by
a micro-electromechanical minor 11. The micro-electromechanical mirror 11
generates a time-variable image 9, such that the semiconductor laser
light source 1 may be used as a projector. The image 9 is preferably
generated by way of row scanning or column scanning of an image area or
via Lissajous figures. It is likewise possible for the semiconductor
laser light source 1 to be used as a pointing device, for instance as a
laser pointer.

[0043] The base area of the enclosure 10 on the carrier top 20 has
dimensions of at most 2.5 mm×2.5 mm. The height of the enclosure
10, in a direction perpendicular to the carrier top 20, amounts to at
most 1.5 mm. The external dimensions of the housing frame 18 and the
cover 5 exceed the internal dimensions of the enclosure 10 preferably by
at most 40%, in particular at most 25%. The electrical power consumption
of the semiconductor lasers 3 amounts in total for example to at least 1
W or at least 2 W. The semiconductor laser light source 1 may preferably
be assembled or mounted in the panel or at wafer level, in particular
using a "full wafer" process.

[0044]FIG. 2 illustrates a further exemplary embodiment of the
semiconductor laser light source 1. The conductor tracks 6a, 6b on the
carrier top 20 are connected to corresponding electrical conductor tracks
7a, 7b on the carrier bottom 25 by way of electrical vias 67a, 67b. The
vias 67a, 67b are located next the cover 5, when the carrier top 20 is
seen in plan view. The conductor tracks 7a, 7b on the carrier bottom 25,
see the view from below according to FIG. 2B, resemble straight lines and
extend, when viewed in a longitudinal direction, preferably over the
entire carrier bottom 25, in order to ensure high thermal contact with a
mounting support, not shown, in the event of surface mounting. The area
of the total carrier bottom 25 occupied by the conductor tracks 7a, 7b
amounts for example to more than 50% or more than 75%.

[0045] Unlike in the illustration, it is likewise possible for the
semiconductor lasers 3 not to be individually drivable but rather
partially or completely to be connected electrically in parallel or in
series. Corresponding circuit configurations may be produced by
arrangement of the conductor tracks 6a, 6b on the carrier top 20 and of
the conductor tracks 7a, 7b on the carrier bottom 25.

[0046] According to FIG. 2 the optical component 4 is mounted directly on
the cover 5. The imaging optical system is formed by a diffractive
optical element 12. The diffractive optical element 12 comprises a
diffraction grating and is designed to display an image of invariable
shape over time, for example in the form of a company logo. However, the
color of the image may be variable over time, by supplying current to the
semiconductor laser 3 in a time-variable manner.

[0047] In the exemplary embodiment according to FIG. 3, beam deflection
and beam combining is effected by the optical component 4, which is
formed directly on the cover 5. A lens 8 is mounted for beam-focusing on
the cover 5 outside the enclosure 10. The lens 8 and/or the optical
component 4 may be in one-piece with the cover 5, as indeed in the other
exemplary embodiments.

[0048]FIG. 4 shows a modification of a light source 1', in which just one
semiconductor laser 3 is located in the enclosure 10. The enclosure 10
may then be made smaller and is for example at most 5 mm3 or at most
2.5 mm3 in size. The conductor tracks 6a, 6b and further optionally
present components of the light source 1' are preferably configured in a
manner similar to the illustrated exemplary embodiments of the
semiconductor laser light source 1. Features of the semiconductor laser
light source 1 are therefore also disclosed for the light source 1' and
vice versa.

[0049] FIGS. 5 and 6 are perspective illustrations of preferred
embodiments of the semiconductor lasers 3r, 3g, 3b. According to FIG. 5,
the semiconductor lasers 3r, 3g, 3b each comprise a substrate 33, which
is formed for example with a ceramic or consists of a ceramic. Two
electrical conductor tracks 34n, 34p are formed by metallization on each
of the substrates 33. Each of the semiconductor bodies 30 of the
semiconductor lasers 3r, 3g, 3b is mounted on its own separate substrate
33. A semiconductor body 30 is contacted electrically in each case via
the conductor tracks 34n on a side facing the substrate 33, for example
by means of a solder, for instance an AuSn solder. The partial beams T1,
T2, T3 emitted by the semiconductor lasers 3r, 3g, 3b are indicated by
arrows.

[0050] On a side of each of the semiconductor bodies 30 remote from the
substrates 33, top face metallization 32 is applied, which covers the
majority of the major faces of the semiconductor bodies 30 remote from
the substrates 33. Side face metallization 35 is applied to longitudinal
sides of the semiconductor bodies 30, by means of which the top face
metallization 32 is connected to the conductor tracks 34p. Preferably
electrically insulating interlayers which are not shown are formed
between the semiconductor bodies 30 and the side face metallization 35.

[0051] In the case of the semiconductor laser 3r according to FIG. 6,
openings 31 are formed through the semiconductor bodies 30, the openings
31 being surrounded by semiconductor material of the semiconductor body
30 and filled at least in part with an electrically conductive material.
Between this electrically conductive material and the semiconductor
material, an electrically insulating interlayer, not shown in FIG. 6, is
preferably located in the openings 31. The at least partially filled
openings 31 provide an electrical connection from the conductor track 34p
to the top face metallization 32.

[0052] In the case of the semiconductor lasers 3g, 3b, a plurality of
recesses 36 are formed on longitudinal sides of the semiconductor body
30. When producing the semiconductor lasers 3g, 3b, a predetermined
breaking point may be formed by these recesses 36 along the longitudinal
side, along which predetermined breaking point the semiconductor bodies
30 are singulated. The side face metallization 35, which connects the top
face metallization 32 electrically with the conductor tracks 34p, is
applied in particular solely in the recesses 36.

[0053] The conductor tracks 34n, 34p are preferably connected electrically
conductively with electrical terminal areas, not shown in FIGS. 5 and 6,
on a bottom of the substrates 33 remote from the semiconductor bodies 30,
such that the semiconductor lasers 3r, 3g, 3b may be mounted on the
carrier top 20 of the semiconductor laser light source 1 by surface
mounting, or SMT for short.

[0054] Because the semiconductor bodies 30 of the semiconductor lasers 3r,
3g, 3b are electrically contactable without bond wires, they may be
produced in a particularly compact and space-saving manner. For example,
the width of the semiconductor bodies 30 is in each case at most 180
μm, in particular between 50 μm and 150 μm inclusive. In a
longitudinal direction, the semiconductor bodies 30 extend for example
for between 400 μm and 4000 μm inclusive. The thickness of the
substrates 33 is preferably between 40 μm and 200 μm inclusive. The
total thickness of the semiconductor lasers 3 preferably amounts to
between 50 μm and 500 μm inclusive.

[0055] A further exemplary embodiment of the semiconductor laser light
source 1 is shown in FIG. 7. Within the enclosure 10, the semiconductor
laser light source 1 comprises three monitor diodes 16, which are each
associated with one of the semiconductor lasers 3r, 3g, 3b. The monitor
diodes 16 make it possible to perform colour balancing and to compensate
power fluctuations of the semiconductor lasers 3r, 3g, 3b. The monitor
diodes 7 are contacted electrically via the conductor tracks 6c, 6d on
the carrier top 20. Like the conductor tracks 6a, 6b, the conductor
tracks 6c, 6d are connected by way of the vias 67 to corresponding
conductor tracks on the carrier bottom, not shown in FIG. 7.

[0056] According to FIG. 7, the optical component 4 is bar-shaped. Optical
coatings 40r, 40g, 40b are incorporated into the optical component 4,
these coatings each being reflective with regard to one of the partial
beams T1, T2, T3 and transmissive with regard to the further partial
beams. A small fraction of the radiation of the partial beams T1, T2, T3
penetrates through the coatings 40r, 40g, 40b to the monitor diodes 16. A
further coating 40d, which is reflective for all the partial beams T1,
T2, T3, brings about deflection of the whole beam Q towards the
micro-electromechanical minor 11. It is also possible for the
semiconductor lasers 3r, 3g, 3b to emit differently polarised partial
beams T1, T2, T3 and for the optical component 4 to be an element with
polarization-selective action. Unlike in the illustration, the
semiconductor laser source 1 in each case includes for example two
semiconductor lasers, which emit at the same wavelength but with
different polarization directions and are in each case combined by means
of the optical component 4.

[0057] A lens 8a is optionally in each case arranged downstream of the
semiconductor lasers 3r, 3g, 3b, said lens being located between the
semiconductor lasers 3r, 3g, 3b and the optical component 4. However, the
distance between the optical component 4 and the semiconductor lasers 3r,
3g, 3b is preferably small, for example at most 600 μm, at most 400
μm or at most 200 μm, such that it is possible to dispense with the
lens 8a.

[0058] According to FIG. 7, the conductor tracks 6a, 6b on the carrier top
20 do not extend outside the enclosure 10, when the carrier top 20 is
seen in plan view. The vias 67, when seen in plan view, are thus also
located within the housing frame 18. This makes it possible to mount the
housing frame 18, formed in particular of a metal, directly on the
carrier top 20. A further lens 8b for focusing the whole beam Q is
mounted on the housing frame 18 or on the cover 5 not shown in FIG. 7.

[0059] According to FIG. 8, once the partial beams have been combined, the
optical component 4 do not deflect the whole beam Q again. In plan view
of the carrier top 20, the conductor tracks 6a, 6b and the vias 67 are
located outside the housing frame 18.

[0060] According to FIG. 9, the lens 8 is mounted on the optical component
4 and is located inside the enclosure 10.

[0061] As also in the exemplary embodiment according to FIG. 9, according
to FIG. 10 the conductor tracks and the vias 67 are arranged inside the
housing frame 18, when the carrier top 20 is seen in plan view. The
monitor diodes 16 are located on sides of the semiconductor lasers 3r,
3g, 3b remote from the optical component 4.

[0062] In the exemplary embodiment of the semiconductor laser light source
1 according to FIG. 11, see the sectional representation in FIG. 11A and
the schematic plan view according to FIG. 11B, an application-specific
integrated circuit 22, or ASIC for short, is mounted on the carrier
bottom 25 for driving the semiconductor lasers 3r, 3g, 3b. The circuit 22
is used to drive the semiconductor lasers 3r, 3g, 3b and optionally to
analyse the signals from the monitor diodes 16.

[0063] According to FIG. 12, the semiconductor laser light source 1
comprises an optical component 4 provided with optical coatings 40. The
partial beam T1 of the semiconductor laser 3r is transmitted
substantially unimpeded by the optical component 4. The partial beam T2
of the semiconductor laser 3b is reflected at a side facing the
semiconductor laser 3r and deflected towards the lens 8b, which is
arranged separately in the enclosure 10 from the optical component 4. The
partial beam T3 of the semiconductor laser 3g is deflected towards the
lens 8b at a major face of the optical component 4 remote from the
semiconductor laser 3r via the coating 40. The lenses 8a located between
the optical component 4 and the semiconductor lasers 3r, 3g, 3b are
preferably dispensed with.

[0064] The monitor diode 16 is mounted indirectly or directly on the
optical component 4 and, from the semiconductor lasers 3r, 3g, 3b,
receives radiation fractions directed by the optical component 4 towards
the monitor diode 16. The individual radiation outputs of the
semiconductor lasers 3r, 3g, 3b are preferably determined during
operation of just one of the semiconductor lasers 3r, 3g, 3b, for example
if the whole beam Q is located outside an image field of an image to be
displayed.

[0065] In the exemplary embodiment of the semiconductor laser light source
1 according to FIG. 13, the optical component 4 takes the form of a
prism. A planar, first major face 41 of the optical component 4 faces the
semiconductor laser 3g. The partial beam T1 of the semiconductor laser 3g
impinges obliquely on the first major face 41, whereby refraction occurs
at the major face 41. The partial beam T1 then passes through the optical
component 4 and exits, likewise undergoing refraction, at the planar,
second major face 42, and continues on to the lens 8 mounted outside the
enclosure 10.

[0066] The semiconductor lasers 3r, 3b are arranged obliquely to the
semiconductor laser 3g and face a second major face 42. The second major
face 42 is oriented parallel to the first major face 41. The partial beam
T3 of the semiconductor laser 3r enters the optical component 4 at the
second major face 42 and is then reflected at the first major face 41.
After reflection at the first major face 41, the partial beams T1, T3
extend congruently.

[0067] The partial beam T2 of the semiconductor laser 3b is reflected at
the second major face 42 and, through this reflection, combined
congruently with the partial beams T1, T3 to form the whole beam Q. The
partial beams T2, T3 also impinge obliquely on the second major face 42.
The major faces 41, 42 are provided with appropriately acting optical
coatings, not shown in FIG. 13.

[0068] The distances between the semiconductor lasers 3r, 3g, 3b and the
lens 8 are preferably adjusted such that the divergences, beam diameters
and/or directions of the partial beams T1, T2, T3 are identical or
approximately identical when they impinge on the lens 8, as indeed in all
the other exemplary embodiments.

[0069] According to FIG. 14, the optical component 4 is of cuboid
construction. Two optical coatings 40 are incorporated into the optical
component 4, which coatings are transmissive with regard to the partial
beam T1 of the semiconductor laser 3g and reflective with regard to the
partial beams T2, T3 of the semiconductor lasers 3r, 3b. In one beam
direction of the partial beam T1, the optical component 4 preferably
extends by at most 800 μm, in particular by between 400 μm and 700
μm inclusive, in particular by around 600 μm. The dimensions of the
enclosure 10 amount to 2 mm×2 mm, in plan view.

[0070] Unlike in FIG. 14, the semiconductor lasers 3g, 3r emit the partial
beams T1, T2 at identical wavelengths, the partial beams T1, T2 being
differently polarized. The partial beams T1, T2 are then combined for
example in that the coating 40 located closer to the semiconductor laser
3g reflects the partial beam T2 with a first polarization direction and
transmits the partial beam T1 with a second polarization direction. In
other words, the optical component 4 then also constitutes a
polarization-selective element.

[0071] The semiconductor laser light source 1, as shown in FIG. 15,
comprises a plurality of integrated circuits 22a, 22b, 22c, which are in
each case connected together and to external components, not shown, via
electrical lines 23. The circuits 22a, 22b, 22c and the carrier 2 with
the semiconductor lasers 3 are mounted on the top of a mounting support
50, the semiconductor lasers 3 emitting the partial beams T1, T2, T3
parallel to a major face of the mounting support 50. The circuits 22a,
22b, 22c comprise for example an electronic driver for the imaging
optical system, driver electronics for the semiconductor laser 3 and/or a
video signal processing unit. Unlike in the illustration, the circuits
22a, 22b, 22c may also be mounted directly on the carrier 2.

[0072] The housing frame 18 has a thickness, for example, of between 0.1
mm and 2.0 mm inclusive, preferably between 0.15 mm and 0.5 mm inclusive,
in particular around 300 μm. If, as in FIG. 15, the housing frame also
serves in outcoupling the whole beam Q, the housing frame is formed for
example with a glass and provided with an antireflective coating, at
least in a region in which the whole beam Q passes through the housing
frame 18.

[0073] The semiconductor laser light source 1 preferably comprises at
least one of two proximity sensors 13a, 13b. The proximity sensor 13b
comprises a semiconductor light source 15, for example a light-emitting
diode emitting in the near infrared spectral range. The semiconductor
light source 15 illuminates a field of view 150, which substantially
covers an image field of the image 9 generated by the
micro-electromechanical mirror 11.

[0074] If there is an object in the field of view 150, radiation emitted
by the semiconductor light source 15 is reflected back towards the
monitor diode 16b. Safety electronics 14, for example integrated in the
circuit 22a, are then capable of reducing the power of the semiconductor
laser 3r, 3b, 3g, so as to prevent risk for example to the human eye in
the field of view 150.

[0075] The proximity sensor 13a is shown in greater detail in FIGS. 15B
and 15C. The micro-electromechanical mirror 11 is suspended and mounted
in mobile manner on minor supports 110a, 110b. The monitor diodes 16c,
16d are mounted in pairs on the mirror support 110b, the signals from
said monitor diodes being analysed in pairs via the electrical lines 23c,
23d, for example via difference amplifiers. The monitor diodes 16c, 16d
are located, cf. FIG. 15B, on the rear of the mirror supports 110a, 110b
remote from the optical component 4.

[0076] This arrangement makes it possible for the monitor diodes 16c, 16d
to detect some of the whole beam Q, which is reflected back from an
object in the further beam path of the whole beam Q towards the
micro-electromechanical minor 11. By analysing the signals of the monitor
diodes 16c, 16d for instance with the assistance of difference
amplifiers, it is thus possible to determine whether an object is located
in the beam path of the whole beam Q. The power of the semiconductor
lasers 3r, 3g, 3b may then be reduced by way of the safety control
electronics 14. The monitor diodes 16c, 16d are based on silicon, for
example.

[0077] In the exemplary embodiment of the semiconductor laser light source
1 according to FIG. 16, unlike in FIG. 15, the imaging optical system,
preferably in the form of a micro-mechanical minor 11, and the lens 8 are
likewise accommodated in the enclosure 10. The housing frame 18 is
provided with a window 180, through which the whole beam Q leaves the
enclosure 10. Also located in the enclosure is the proximity sensor 13.
The monitor diodes 16 are also located in the enclosure 10. Two of the
monitor diodes 16 are mounted on a side of the optical component 4 remote
from the associated semiconductor laser 3b, 3r, a further one of the
monitor diodes 16 being arranged in a manner similar to FIG. 10, like the
semiconductor lasers 3r, 3g, 3b. Electrical interconnection proceeds for
example in a manner similar to FIG. 3 or FIG. 11. The cover 5 is not
shown in FIG. 16.

[0078] Unlike in the illustration and indeed as in all the other exemplary
embodiments, the lens 8 may comprise an optical system with a plurality
of lenses. In particular, due to the optical system the whole beam has a
comparatively large beam diameter at the mirror 11 or is magnified by the
optical system upstream of the minor 11. The beam diameter and/or a
divergence are then preferably not reduced until after the minor 11. In
other words, the imaging optical system may be located between individual
ones of the then multiple lenses 8.

[0079] A beam dump 45 is optionally located in the enclosure 10, in
particular between the window 180 and the semiconductor lasers 3b, 3r, 3g
and/or the monitor diodes 16 and/or the proximity sensor 13. By way of
the beam dump, a proportion of the whole beam Q reflected at the window
180 or light entering through the window 180 is at least partially kept
away in particular from the monitor diodes 16 and/or from the proximity
sensor 13.

[0080] The enclosure 10 is preferably evacuated. This allows the
micro-electromechanical minor 11 to move at high speeds. In addition, the
semiconductor laser light source 1 is free of an additional vacuum
chamber for the micro-electromechanical minor 11, whereby reflection
losses at windows of such a vacuum chamber likewise do not occur.

[0081] A width d1 of a radiation entrance face of the lens 8 is for
example between 0.5 mm and 4.0 mm inclusive, in particular around 2 mm. A
height d3 of the lens 8, parallel to a beam axis of the whole beam Q in
the lens 8, is in particular between 0.5 mm and 2.0 mm inclusive,
preferably around 1.0 mm. A distance d2 between the monitor diode 16
associated with the semiconductor laser 3g and the radiation entrance
face of the lens 8 is preferably between 0.5 mm and 2.0 mm inclusive or
between 0.75 mm and 1.5 mm inclusive, for example around 1.25 mm. The
internal dimensions d4, d5 of the enclosure 10 amount to around 4
mm×5.5 mm, while the external dimensions of the carrier 2 are less
than 8 mm×8 mm, in particular around 4.5 mm×6 mm. The total
height of the semiconductor laser light source 1 is less than 4 mm, while
the enclosure 10 preferably measures at most 100 mm3.

[0082]FIG. 17 shows a conventional laser light source 1'. The perspective
representation according to FIG. 17A shows the cover 5, mounted on a
mounting support 50. According to FIG. 17B, the cover 5 is removed, cf.
also the plan view in FIG. 17C. The semiconductor body 30 of the
semiconductor laser 3' is contacted electrically via the bonding wires
19. One of the bonding wires 19 extends to the surface metallization 32,
and a further one of the bonding wires extends to the conductor track 6.
Such a structure of the semiconductor laser 3' has a comparatively large
space requirement.

[0083] The semiconductor laser light source 1 according to the plan view
in FIG. 18A and the sectional representation in FIG. 18B corresponds,
with regard to beam guidance and the optical structure, substantially to
the semiconductor light source 1 according to FIG. 16 and with regard to
electrical contacting substantially to the semiconductor light source 1
according to FIG. 11A. In addition, the semiconductor light source 1
comprises an in particular digital ASIC 22a for receiving a video signal
and in particular analogue ASICs 22b, 22c, which may include
digital/analogue converters, for driving the micro-electromechanical
mirror 11 and for driving the semiconductor lasers 3. The ASICs 22a, 22b,
22c are mounted outside and mounted next to the cover 5, cf. also FIG.
15A. The proximity sensor 13 and/or an ambient luminosity sensor 13 is
optionally mounted in the enclosure 10, as indeed in all the other
exemplary embodiments.

[0084] FIGS. 19 and 20B are perspective representations of the
semiconductor light source 1 and of the cover 5 therefor. The cover 5
comprises a light outlet panel 501, through which, in operation, the
whole beam Q leaves the semiconductor light source 1 after reflection at
the micro-electromechanical mirror 11 located inside the cover 5. The
light outlet panel 501 is preferably provided locally or over its entire
surface with an anti-reflective coating, for example with a broadband
anti-reflective coating for the spectral range of 420 nm to 660 nm.

[0085] The light outlet panel 501, a lid panel 502, side panels 503 and a
rear panel 504 are preferably made from the same material, wherein the
light outlet panel 501 may be of relatively high optical quality. The
stated components are preferably made from a glass, which is adapted to
the carrier 2 with regard to coefficient of thermal expansion. For
example, the coefficients of thermal expansion of the components of the
cover 5 and of the carrier 2 differ from one another by at most 25% or by
at most 10% or by at most 5%. The carrier 2 is here preferably made from
aluminium nitride.

[0086] The cover 5 is adhesively bonded or soldered to the frame 18 or
directly to the carrier 2, such that the enclosure 10 is sealed. The
individual components of the cover 5 are for example adhesively bonded to
one another or made in one piece. The thicknesses of the components are
in particular between 0.4 mm and 1.6 mm inclusive, for example the
thickness L2 amounts to around 0.5 mm and the thickness L5 to around 1.0
mm. The length L3 amounts in particular to between 2 mm and 8 mm
inclusive, preferably around 5 mm. The length L1 amounts in particular to
between 3 mm and 9 mm inclusive, preferably around 6 mm. The length L4
amounts in particular to between 2 mm and 6 mm inclusive, preferably
around 4 mm. An angle α between the carrier 2 and the light outlet
panel 501 is preferably between 60° and 75° inclusive, for
example around 67.5°.

[0087] FIG. 20A is a schematic plan view of a carrier assembly 200, or
wafer. The carrier assembly 200 is for example an aluminium nitride wafer
with a diameter of around 102 mm or around 152 mm, on which the
semiconductor lasers 3 are mounted and contacted. The covers 5, for
instance according to FIG. 20B, may be fitted to the carrier assembly 200
under protective gas or in a vacuum after adjustment of the optics, but
before singulation of the wafer 200 into individual semiconductor light
sources 1. Production of the semiconductor light sources 1 then proceeds
entirely in the carrier assembly 200, i.e., at wafer level.

[0088] The invention described herein is not restricted by the description
given with reference to the exemplary embodiments. Rather, the invention
encompasses any novel feature and any combination of features, including
in particular any combination of features in the claims, even if this
feature or this combination is not explicitly indicated in the claims or
exemplary embodiments.