Journal of Micro/Nanolithography, MEMS, and MOEMS

We propose an electron beam lithography system that would allow for pattern transfer from a magnetic reticle to a wafer. The reticle consists of a patterned magnetic media where magnetization of a nanomagnet stores a value of a pixel. Information stored on this media is transferred as a pattern onto the electron-resist via spin-polarized electrons photo-generated from the reticle and spin-filtered along the way to the wafer to generate contrast. It is speculated that such a system offers significantly higher throughput than a multielectron-beam lithography system and may outpace in flexibility, cost and throughput extreme ultra-violet-lithography systems that are currently being developed, while at least matching the resolution of both lithography systems.