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Abstract

We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics.

Frequency-doubled output power as a function of pump power. The temperature of the gain element was kept at 15°C. The laser spectra and the output beam taken at the highest output power are shown in the insets.