IDW24G65C5B

Overview

Description:

CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f).

The new CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

In order to optimize your browsing experience Infineon uses cookies. You agree to the usage of cookies when you continue browsing this site. For more information regarding cookies and the processing of your personal data please read our Privacy Policy.