The self-doped La1−xMnO3 (x=0.1 and 0.3) thin films deposited on Nb-doped (wt % y) SrTiO3
(y=0.05 and 0.8) crystals to form heteroepitaxial junctions have been prepared by the pulse laser
deposition method. The current-voltage loops of junction were measured at several fixed magnetic
fields for the temperature from 10 to 300 K. We have focused on the effects of doping level and
annealing time on the magnetically tunable property of the junction. The results show that these
junctions have a typical temperature-dependent rectifying characteristics and asymmetrical
hysteresis. The magnetically tunable property of the junction was related with the annealing time for
the self-doped La1−xMnO3−δ thin film and the doping level in the Nb-doped SrTiO3 (STON) crystal.
In the self-doped La0.9MnO3/0.05-STON junction annealed at 900 °C for 5 h, the relative ratio of
voltage [Vb(0)−Vb(H)] /Vb(0) is about 70% at H=6 T and T=70 K for I=0.1 mA, showing a
large magnetically tunable property. These results reveal the great potential of the manganites in
configuring artificial devices.

The self-doped La1−xMnO3 (x=0.1 and 0.3) thin films deposited on Nb-doped (wt % y) SrTiO3
(y=0.05 and 0.8) crystals to form heteroepitaxial junctions have been prepared by the pulse laser
deposition method. The current-voltage loops of junction were measured at several fixed magnetic
fields for the temperature from 10 to 300 K. We have focused on the effects of doping level and
annealing time on the magnetically tunable property of the junction. The results show that these
junctions have a typical temperature-dependent rectifying characteristics and asymmetrical
hysteresis. The magnetically tunable property of the junction was related with the annealing time for
the self-doped La1−xMnO3−δ thin film and the doping level in the Nb-doped SrTiO3 (STON) crystal.
In the self-doped La0.9MnO3/0.05-STON junction annealed at 900 °C for 5 h, the relative ratio of
voltage [Vb(0)−Vb(H)] /Vb(0) is about 70% at H=6 T and T=70 K for I=0.1 mA, showing a
large magnetically tunable property. These results reveal the great potential of the manganites in
configuring artificial devices.

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eng

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dc.publisher

American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2010, v. 107 n. 9 article no. 09C704 and may be found at http://jap.aip.org/resource/1/japiau/v107/i9/p09C704_s1