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A systematic microscopic theory for the rheology of dense non-Brownian suspensions characterized by the volume fraction
$\unicode[STIX]{x1D711}$
is developed. The theory successfully derives the critical behaviour in the vicinity of the jamming point (volume fraction
$\unicode[STIX]{x1D711}_{J}$
), for both the pressure
$P$
and the shear stress
$\unicode[STIX]{x1D70E}_{xy}$
, i.e.
$P\sim \unicode[STIX]{x1D70E}_{xy}\sim \dot{\unicode[STIX]{x1D6FE}}\unicode[STIX]{x1D702}_{0}\unicode[STIX]{x1D6FF}\unicode[STIX]{x1D711}^{-2}$
, where
$\dot{\unicode[STIX]{x1D6FE}}$
is the shear rate,
$\unicode[STIX]{x1D702}_{0}$
is the shear viscosity of the solvent and
$\unicode[STIX]{x1D6FF}\unicode[STIX]{x1D711}=\unicode[STIX]{x1D711}_{J}-\unicode[STIX]{x1D711}>0$
is the distance from the jamming point. It also successfully describes the behaviour of the stress ratio
$\unicode[STIX]{x1D707}=\unicode[STIX]{x1D70E}_{xy}/P$
with respect to the viscous number
$J=\dot{\unicode[STIX]{x1D6FE}}\unicode[STIX]{x1D702}_{0}/P$
.

A “0-0 type” multiferroic BaTiO3-NiFe2O4 (BT-NF) composite thin film was prepared on SrRuO3/(La,Sr)MnO3/CeO2/YSZ/Si(001) substrate using pulsed laser deposition (PLD). Epitaxial growth of the film was confirmed using x-ray pole figure measurements. Cross-sectional TEM observations revealed that the crystal structure and morphology of the BT-NF composite thin film depends on the oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr has smaller grains than that deposited at 1.0×10-1 Torr. The magnetic and ferroelectric properties of BT-NF composite thin film were correlated with the microstructure that was controlled by oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr had paramagnetic properties with less polarization than the film deposited at 1.0×10-1 Torr.

Polymeric ZrO2 gels were prepared by the controlled chemical modification method (CCM method) of zirconium-n-propoxide. In this method, the steric hindrance by alkoxide-acetic acid chelation could be used to control the hydrolysis and condensation reaction of the zirconium alkoxide if the amount of hydrolysis water was limited. As a result, polycondensaticn occurred uniformly in the solution, forming a linear zirconoxane polymer. When the solvent evaporated, the zirconoxane polymer crosslinked with each other and formed polymeric ZrO2, gels, which were monolithic and transparent. These polymeric gels could be re-dissolved into n-butyl alcohol with acetic acid and mechanical stirring. Heating would enhance the dissolution of the gels. Using the re-dissolved gel solution, dense thin films of ZrO2, could be obtained by dip-coating procedures without many coating operations.

We have grown indium nitride (InN) films using In buffer layer on an a-plane sapphire substrate under atmospheric pressure by halide CVD (AP-HCVD). Growth was carried out by two steps: deposition In buffer layer at 900 °C and subsequent growth of InN layer at 650 °C. In order to compare, we also grown InN films on an a-plane sapphire. The InN films are investigated on crystal quality, surface morphology and electrical property using high-resolution X-ray diffraction (HR-XRD), X-ray pole figure, scanning electron microscope (SEM), Hall measurement. The results show that the crystal quality, surface morphology and electrical property of InN films are improved by using In buffer layer.

Epitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

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