Although many lead zirconate titanate (PZT) based MEMS have been demonstrated, the thermal incompatibility problems associated with in-situ fabrication of PZT films on the device substrate remain a major challenge. Process temperatures of 600 –700 ºC are common for PZT on silicon, however these temperatures can degrade silicon microelectronics and metal interconnects. By preparing the film on a separate fabrication substrate, such as sapphire, and then using a pulsed UV laser to aid its transfer to the device substrate the problems of thermal incompatibility are avoided [1]. It has been shown that the piezoelectric properties of laser-released PZT films may be improved by conventional ion milling to remove a ( ~ 100 nm) layer originally generated due to the excimer laser exposure [2]. In order to gain a better understanding of the structure of this interfacial layer we are engaged in a project utilising dual-beam focussed- ion- beam etching ( Nova 200 Nanolab, FEI UK Ltd) to study the structure of the laser-damaged region. Results on nano-depth profiling using the SEM-FIB technique will be presented and correlated to laser-lift-off conditions. The merits of SEM-FIB for ferroelectric films will be discussed.1. L Tsakalakos, T Sands, E Carleton, K M Yu, J Appl. Phys. 94, (2003) 4047-522. B Xu, et al. (to be published Proceedings of 107th American Ceramic Society Annual Meeting)