Abstract

Highly transparent zinc oxide (ZnO)nanowirenetworks have been used as the active material in thin film transistors(TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnOnanowirenetworks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnOnanowirenetworks could be ideal for inexpensive large area electronics.

Received 06 January 2009Accepted 25 March 2009Published online 20 April 2009

Acknowledgments:

This work was funded by the Samsung Advanced Institute of Technology under the Advanced Nanomaterials for Electronics collaboration with the Cambridge University Engineering Department. Y. Zhang acknowledges the support from the EC via the DESGYN-IT and CANDICE projects.