Semiconductors Properties

This section is intended to systematize parameters of semiconductor compounds and heterostructures based on them. Such a WWW-archive has a number of advantages: in particular, it enables physicists, both theoreticians and experimentalists, to rapidly retrieve the semiconducting material parameters they are interested in. In addition, physical parameters - optical, electrical, mechanical, etc. - will be presented in the framework of the electronic archive for both the known and new semiconducting compounds. As the starting point in creating the database served the voluminous reference book "Handbook Series on Semiconductor Parameters" vol. 1, 2 edited by M. Levinstein, S. Rumyantsev and M. Shur, World Scientific, London, 1996, 1999. We express sincere gratitude to M.E. Levinstein for help and attention to this work. A great number of reference books and original papers cited at the end of this section have been used in compiling the information database.

We would like to express our warmest gratitude to all colleages presented their original data and literature references to complete these archive. If you find these archive pages helpful, and use the data retrieved through the server for your reseach, we would appreciate acknowledging it in your papers.

Source: www.ioffe.ru

RELATED VIDEO

Ebook Processing and Properties of Compound Semiconductors ...

Physics Semiconductors part 5 (Extrinsic Properties) CBSE ...

Semiconductors

RELATED FACTS

An Electrolyte–insulator–semiconductor (EIS) sensor is a sensor that is made of these three components:
The EIS sensor can be used in combination with other structures, for example to construct a light-addressable potentiometric sensor (LAPS).

The silicon bandgap temperature sensor is an extremely common form of temperature sensor (thermometer) used in electronic equipment. Its main advantage is that it can be included in a silicon integrated circuit at very low cost. The principle of the sensor is that...