The carrier recombination activities of small angle (SA) grain boundaries (GBs) in
multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current
(EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0-
10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed
strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC
contrast were discussed in terms of boundary dislocations.