A metal-insulator-n-type 6H-silicon carbide (MISiC) Schottky-barrier-diode (SBD) gas sensor with thin N*2 O-grown oxynitride as gate insulator has been fabricated and studied. The results show that the N2O-grown technique improves the interface properties between the gate insulator and the substrate and hence the sensor performance. Thus, it is suitable for long time working under harsh environments, e.g., an operating temperature of 300°C. And increasing the insulator thickness properly helps to improve the sensitivity and reliability of the sensor.

A metal-insulator-n-type 6H-silicon carbide (MISiC) Schottky-barrier-diode (SBD) gas sensor with thin N*2 O-grown oxynitride as gate insulator has been fabricated and studied. The results show that the N2O-grown technique improves the interface properties between the gate insulator and the substrate and hence the sensor performance. Thus, it is suitable for long time working under harsh environments, e.g., an operating temperature of 300°C. And increasing the insulator thickness properly helps to improve the sensitivity and reliability of the sensor.

en_HK

dc.language

eng

en_US

dc.relation.ispartof

Chinese Journal of Sensors and Actuators

en_HK

dc.subject

Gas sensor

en_HK

dc.subject

Metal-Insulator-SiC (MISiC)

en_HK

dc.subject

Oxynitride

en_HK

dc.subject

Schottky barrier diode (SBD)

en_HK

dc.title

Analysis on hydrogen-sensitive characteristics of Schottky sensor with N2O-grown oxynitride as gate insulator