Abstract

The authors demonstrate the smaller blueshift in increasing injection current level of an quantum-well (QW)light-emitting diode(LED) of a longer electroluminescence(EL) peak wavelength based on the prestrained growth technique when compared with the result of a LED of a shorter EL peak wavelength based on the conventional growth technique. The smaller blueshift can be attributed to more contribution to light emission from the deeper QWs of higher indium contents when the injection current level is increased in the prestrain sample. It can also be attributed to the stronger carrier localization because of the stronger composition clustering in the prestrain sample of higher indium contents. Carrier localization can reduce the influences of the quantum-confined Stark effect and its screening process.

Received 17 June 2007Accepted 09 July 2007Published online 02 August 2007

Acknowledgments:

This research was supported by National Science Council, The Republic of China under Grant Nos. NSC 95-2120-M-002-012 and NSC 95-2221-E-002-287 and by US Air Force Scientific Research Office under Contract No. AOARD-06-4052.