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This story was printed from CdrInfo.com,
located at http://www.cdrinfo.com.
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Samsung is strengthening its presence in the enterprise storage market with the release of new solid state drives (SSDs,) designed for use in servers.

Both the new SM843 and the SM1625 SSDs are designed for a wide range of server and storage applications that depend on fast data writing including social media in the cloud, SQL database logs, media streaming, virtualization, video on demand and online transaction processing (OLTP).

Targeted toward data centers, Samsung's SM843 drive is a multi-level chip (MLC) SSD offering two-three times the endurance of similar MLC-based drives. The SATA interface drive can write up to 1064TBW (terabytes written), which represents a more than 1600 percent improvement from Samsung's previous generation SSD, which offered 60TBW.

The SM843 drive delivers an up to 11,000 IOPS (inputs outputs per second) sustained random write performance, with up to 70,000 (sustained) random read IOPS. In addition, its maximum latency, or the time it takes to send data from an application to the drive, has been reduced more than 80 percent from Samsung?s previous enterprise SSD.

Further, the SM843 can read data sequentially at up to 520 megabytes per second (MB/s), and write it at up to 420MB/s. Samsung is sampling the drive in densities of 120 gigabytes (GB), 240GB and 480GB. The SM843 also consumes 28 percent less active power than Samsung?s previous enterprise SSD. In addition, it comes with an option for protection against loss of power in outages.

Samsung also began introducing another new enterprise-targeted SSD - the SM1625 - this month, its first dual-ported SAS SSD. The SM1625 is available in densities of 100GB, 200GB, 400GB and 800GB.

Designed for use in external storage systems for high availability (HA) environments, the SM1625 features up to 41,000 (sustained) random write IOPS, and randomly reads up to 101,000 IOPS when using both ports. The Samsung's SM1625 writes data sequentially at 740MB/s and reads it at 848MB/s when using both ports. It also will provide power loss protection to ensure data is safe in a power outage.

Both drives make use of Samsung's 20 nanometer class NAND flash memory components which incorporate an ultra-fast toggle DDR interface.