Abstract

In this paper, we present a drain current model for stressed short-channel MOSFET's.
Stress conditions are chosen so that the interface states generated by hot-carriers are
dominant. The defects generated during stress time are simulated by a spatio-temporal
gaussian distribution. The parasitic source and drain resistances are included. We also
investigate the impact of the interface charge density, generated during stress, on the
transconductance. Simulation results show a significant degradation of the drain
current versus stress time.