Full-band simulations of indirect, phonon assisted, interband tunneling are used to calculate the current-voltage response of a low-temperature molecular-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts. Electron confinement in the contacts results in weak structure in the...

The current of a molecular beam epitaxially grown Sb and B delta-doped Si tunnel diode is simulated in all regions of tunneling: peak, valley, and post-valley turn-on. All three regions of the Iâ€“V are qualitatively captured by the calculations. The inclusion in the model of bandtail...

An equivalent circuit obtained from microwave impedance and power data is proposed for a resonant tunneling diode. The four-element circuit consists of a series R and C in parallel with a nonlinear negative differential conductance -G, the combination in turn in series with a resistor r. The...

The temperature dependent tunneling resistance of magnetic tunnel junctions with MgO barriers was characterized. In the junctions prepared by magnetron sputtering, the tunnel magnetoresistance decreases with increasing temperature. Various contributions to the tunnel conductance are discussed...

Describes the fabrication of a silicon single electron tunneling transistor with voltage gain. Formation of the space-charge region (SCR) near tunneling junctions; Size of the SCR enhancement effect; Correlation of wire conductivity and depletion regions with tunnel junctions.

We report on differential conductance measurements on a gold double-dot structure at 4.2 K. The two dots were connected in series by tunnel junctions formed by atomic force microscopy manipulation of nanodisks. The tunnel junctions were made strongly asymmetric. The characteristic...

The article describes the usefulness of the operational transconductance amplifier as a voltage controllable current gain (VCCG), of the active band reject filter (BRF) and critical frequency for best design filter requirements using bipolar junction transistor (BJT) and OTAs to control the...