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On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

Author

Zhang, Zi-Hui

Liu, Wei

Tan, Swee Tiam

Ju, Zhengang

Ji, Yun

Kyaw, Zabu

Zhang, Xueliang

Hasanov, Namig

Zhu, Binbin

Lu, Shunpeng

Zhang, Yiping

Sun, Xiao Wei

Demir, Hilmi Volkan

Date of Issue

2014

School

School of Electrical and Electronic Engineering

Abstract

Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs.