Multidisciplinary

University

Research

Initiative

1994 MURI RESEARCH CENTERS
IN INTELLIGENT DESIGN AND MANUFACTURING IN ELECTRONICS
AND MATERIALS PROCESSING

Modeling and Control of Advanced
Chemical Vapor Deposition Processes:
The Control of Defects in Mixed III-V Compound
Heterostructures

OBJECTIVES:

Our overall efforts are to design an efficient rapid
thermal OMCVD reactor system, including efforts to
study the initial phases for heteroepitaxial growth of
GaP/Ga(x)IN(1-x)P heterostructures on silicon substrates. The
approach involves a combination of remote plasma-assisted
nitridation, as the processing approach, and PRS, as the
real-time monitoring approach. Other topics include
development of real-time measurement techniques, models for
nonlinear deposition in a RTOMCVD reactor, and computational
methods in support of design of reactor and real time feed
back control.