Abstract

Heteroepitaxialgrowth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAsquantum wells(QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAsquantum dots(QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed.

Received 12 August 2011Accepted 09 September 2011Published online 30 September 2011

Acknowledgments:

This work was performed within the Nanometer Structure Consortium at Lund University, supported by the Swedish Research Council, by the Swedish Foundation for Strategic Research, by the Top-level Research Initiative “Nanotechnology and Energy Efficiency,” and by the EU program AMON-RA (214814). This report is based on a project that was funded by E.ON AG as part of the E.ON International Research Initiative. The authors acknowledge Knut Deppert for valuable discussions.