(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*

This guide provides a more detailed description of the syntax that is supported along with examples.

This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.

Concept Search - What can I type?

For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.

Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.

Formation of Submicron Grooves in Silicon

Publishing Venue

IBM

Related People

Riseman, J: AUTHOR

Abstract

This article describes methods for forming narrow, such as submicrometer, dimensioned mask openings on a semiconductor body. Two insulator materials having different etching characteristics are used. One method involves depositing a P+ doped polysilicon layer 10 upon a silicon substrate 12. Layer 14 of silicon nitride (Si3N4) and layer 15 of silicon dioxide (SiO2) are formed over layer 10. Then using lithography and etching techniques portions of layers 14, 15 are removed to produce the Fig. 1 structure. A Si3N4 sidewall 16 is grown by a blanket deposition followed by anisotropic reaction ion etching to form a 200- to 300-nanometer layer 18 of silicon dioxide, as seen in Fig. 2. The exposed silicon is thermally oxidized. The silicon nitride sidewall layer 16 is removed by either chemical or plasma etching, as shown in Fig.

Country

United States

Language

English (United States)

This text was extracted from a PDF file.

At least one non-text object (such as an image or picture) has been suppressed.

This is the abbreviated version, containing approximately
52% of the total text.

Page 1 of 2

Formation of Submicron Grooves in Silicon

This article describes methods for forming narrow, such as submicrometer,
dimensioned mask openings on a semiconductor body. Two insulator materials
having different etching characteristics are used. One method involves depositing
a P+ doped polysilicon layer 10 upon a silicon substrate 12. Layer 14 of silicon
nitride (Si3N4) and layer 15 of silicon dioxide (SiO2) are formed over layer 10.
Then using lithography and etching techniques portions of layers 14, 15 are
removed to produce the Fig. 1 structure. A Si3N4 sidewall 16 is grown by a
blanket deposition followed by anisotropic reaction ion etching to form a 200- to
300-nanometer layer 18 of silicon dioxide, as seen in Fig. 2. The exposed silicon
is thermally oxidized. The silicon nitride sidewall layer 16 is removed by either
chemical or plasma etching, as shown in Fig. 3. The silicon dioxide layers 15, 18
remaining are essentially a mask. One can now ion implant through the
openings, use the mask to reactive ion etching through the polysilicon layer 10
and into the silicon 12, or thermally nitride the polysilicon layer 10 to convert this
mask into its negative, after removing the silicon dioxide layers 15, 18. By using
the mask 15, 18 and reactive ion etching through the polysilicon layer 10, the Fig.
4 structure is obtained. The Fig. 3 structure can be used to form a bipolar device
by boron implanting into the silicon through the mask openings to form regions 20. The silicon dioxide and silicon nitride layers are removed and the polysilicon
layer partially oxidized to form layer 22. An N+ dopant is implanted into the
polysilicon where the emitter is desired and diffused into the silicon to form the
emitter region 24. Prior to the N+ doping a heat treatment had formed extrinsic
base 26 and intrinsic base 28 by outdiffusion of P from the polysilicon layer 10,
as seen in Fig. 5. Another bipolar transistor application of the Fig. 3 structure is
as fol...