Abstract

Removal of native oxide from Al0.24Ga0.24In0.52As layers grown lattice‐matched onto InP substrates is successfully achieved by an insitu hydrogen radical treatment prior to molecular beam epitaxy(MBE) overgrowth. Cleaning conditions using moderate substrate temperatures not necessitating a surface stabilizing arsenic flux were elaborated, which ensured complete oxide removal without deterioration of the underlying AlGaInAs material. The surface quality as assessed by high energy electron diffraction, and the quality of epitaxial layers deposited onto this surface were found to be at least equivalent to that achieved with epitaxialgrowth directly on InP substrates, indicating the achievement of thorough oxide removal, low residual contamination levels, and a surface smoothness adequate for MBE regrowth.