Localization-enhanced biexciton binding in semiconductors

1 Department of Micro- and Nanotechnology, Technical University of Denmark2 Department of Photonics Engineering, Technical University of Denmark

DOI:

10.1103/PhysRevB.59.15405

Abstract:

The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1-xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton.