Abstract

An ultracompact near-field optical probe is described that is based on a single, integrated assembly consisting of a gallium nitride(GaN)light-emitting diode(LED), a microlens, and a cantilever assembly containing a hollow pyramidal probe with a subwavelength aperture at its apex. The LED emits ultraviolet light and may be used as a light source for near-field photolithographic exposure. Using this simple device compatible with many commercial atomic force microscope systems, it is possible to form nanostructures in photoresist with a resolution of 35 nm, corresponding to .

Received 27 August 2008Accepted 03 November 2008Published online 24 November 2008

Acknowledgments:

We would like to thank Research Councils U.K. for funding this work through a Basic Technology award for the SNOMIPEDE project. We also thank the ERA foundation, Sheffield University, and Yorkshire Forward for financial support. We also thank Rob Airey and Peter Parbrook for technical assistance and useful discussions.