Abstract

An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer.Charging of the floating node is evidenced by a large peak in source–drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.