Abstract

Ion beam synthesized iron silicide (FeSi2) (200 keV, 350 °C, 4×1017 Fe+/cm2) was studied by transmission electron microscopy. Face‐centered cubic FeSi2 (γ phase) was observed in the as‐implanted sample and the samples annealed at temperatures up to 600 °C. It is suggested that the formation of the equilibrium semiconducting FeSi2 (β phase) is preceded via a transition γ phase due to its better lattice match with the silicon matrix. The absence of metallic FeSi2 (α phase) can be attributed to the high iron dose implantation.