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Optoelectronic IGBT/MOSFET Gate Drivers utilizing Optoplanar® coplanar packaging technology and optimized IC design to achieve high insulation voltage and high noise immunity, characterized by high common mode rejection. These devices offer a 1,414 V peak working voltage to permit the device to directly drive medium power IGBTs. The use of P-channel MOSFETs at output stage enable lower dynamic power consumption per cycle during switching that current solutions.