Author:

Byung Hee Hong
(Sungkyunkwan University)

Large scale pattern growth of graphene is one of the most awaiting problems
to be solved in order to bring this material for device application.
Recently, macroscopic scale graphene films have been prepared by
two-dimensional assembly of graphene sheets chemically derived from graphite
crystals and graphene oxides. However, the sheet resistance of these films
is found to be much larger than theoretically expected values. Here, we
report the direct synthesis of centimeter-scale graphene films using
chemical vapor deposition (CVD) on thin Ni layers, where the overall
structures are connected by lateral electric connections. As a result, the
transferred graphene films show very low sheet resistance with excellent
optical transparency. At low temperatures, the single layers transferred on
SiO$_{2}$ substrates show high electron mobility with the signature of
quantum Hall effect, implying that the quality of CVD-grown graphene is as
high as mechanically cleaved graphenes. Employing these outstanding
mechanical properties of graphenes, we also demonstrate the macroscopic
usage of the highly conducting and transparent electrodes for
flexible/stretchable/foldable electronics.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.B28.3