Weebit Nano demonstrated a 300 nm 4Kb Silicon Oxide RRAM cell

Weebit Nano announced that it has managed to produce a 4Kb array on 300 nm cells, with 100% yield on selected arrays. Weebit says that this result validates its technology and that this demonstration was the final significant step towards the next goal for the company - a 40nm RRAM Silicon Oxide working cell by the end of 2017.

Preliminary speed tests of Weebit's technology showed that write speeds could be 100 to 1000 times faster than traditional 3D Flash technology while using significantly lower energy.