.. (2 indent ) With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent

The following subclasses beginning with the letter E are E-subclasses.
Each E-subclass corresponds in scope to a classification in a foreign
classification system, for example, the European Classification system (ECLA).
The foreign classification equivalent to an E-subclass is identified in
the subclass definition. In addition to US documents classified in
E-subclasses by US examiners, documents are regularly classified in
E-subclasses according to the classification practices of any foreign
Offices identified in parentheses at the end of the title. For example,
"(EPO)" at the end of a title indicates both European and
US patent documents, as classified by the EPO, are regularly added to the
subclass. E-subclasses may contain subject matter outside the scope of
this class.Consult their definitions, or the documents themselves to
clarify or interpret titles.

... (3 indent ) Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (e.g., two terminal device) (EPO)

SEMICONDUCTOR DEVICES RESPONSIVE OR SENSITIVE TO ELECTROMAGNETIC RADIATION (E.G., INFRARED RADIATION, ADAPTED FOR CONVERSION OF RADIATION INTO ELECTRICAL ENERGY OR FOR CONTROL OF ELECTRICAL ENERGY BY SUCH RADIATION PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF) (EPO)

. (1 indent ) Including semiconductor component with at least one potential barrier or surface barrier adapted for light emission structurally associated with controlling devices having a variable impedance and not being light sensitive (EPO)

... (3 indent ) With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO)

... (3 indent ) With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO)

.. (2 indent ) Characterized by combinations of two or more features of crystalline structure, shape, materials, physical imperfections, and concentration/distribution of impurities in bulk material (EPO)

....• (5 indent ) For lateral devices where connection to source or drain region is done through at least one part of semiconductor substrate thickness (e.g., with connecting sink or with via-hole) (EPO)

....•... (8 indent ) With nonplanar surface (e.g., with nonplanar gate or with trench or recess or pillar in surface of emitter, base, or collector region for improving current density or short-circuiting emitter and base regions) (EPO)

... (3 indent ) Devices responsive or sensitive to electromagnetic radiation, e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation (EPO)

.... (4 indent ) Devices responsive or sensitive to electromagnetic radiation, e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation, e.g., photovoltaic modules based on organic solar cells (EPO)