DRAM has been a de facto standard for main memory, and advances in process technology have led to a rapid increase in its capacity and bandwidth. In contrast, its random access latency has remained… (More)

Distributed in-memory key-value stores (KVSs), such as memcached, have become a critical data serving layer in modern Internet-oriented data center infrastructure. Their performance and efficiency… (More)

Modern DRAM devices for the main memory are structured to have multiple banks to satisfy ever-increasing throughput, energy-efficiency, and capacity demands. Due to tight cost constraints, only one… (More)

Technology scaling has continuously improved the density, performance, energy efficiency, and cost of DRAM-based main memory systems. Starting from sub-20nm processes, however, the industry began to… (More)

Through-Silicon Interposer (TSI) has recently been proposed to provide high memory bandwidth and improve energy efficiency of the main memory system. However, the impact of TSI on main memory system… (More)

3D-stacked DRAM has the potential to provide high performance and large capacity memory for future high performance computing systems and datacenters, and the integration of a dedicated logic die… (More)

Faulty cells have become major problems in cost-sensitive main-memory DRAM devices. Conventional solutions to reduce device failure rates due to cells with permanent faults, such as populating spare… (More)