Our innovative and industry-leading development techniques have made these stiff, durable and stable materials possible for the most demanding manufacturing environments.

CVD silicon carbide traditionally has been used in semiconductor processing applications, such as RTP and oxide etch chamber components, which can take advantage of the excellent thermal shock resistance of silicon carbide and its resistance to erosion by high energy plasmas.

Performance SiC, conductive CVD silicon carbide gives equipment manufacturers new options for materials to use in the processing chamber. The benefits of CVD silicon carbide-purity, stiffness, chemical and oxidation resistance, ability to withstand thermal shock, and dimensional stability—now combine with low electrical resistance, opening up the door to new ways to process wafers.

Heating elements and susceptors made of low resistivity Performance SiC may improve heating uniformity inside the processing chamber. Other ways it may benefit the industry include chambers or liners with improved in situ clean uniformities, sputter targets, and all types of electrodes. Since CVD silicon carbide can be used in very thin sections, its low mass can improve throughput while it improves the use of space in crowded processing tools.

We believe low resistivity CVD silicon carbide will revolutionize the deposition and etch processes. With a combination of suitability for use in a wafer processing chamber and its electrical conductivity, this material opens up new ways to get energy to the wafer. Low resistivity Performance SiC is theoretically dense, intrinsically pure, has a high degree of chemical and process inertness, and has a bulk resistivity of less than 0.1 ohm-cm.

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