ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

introduction of dopant into semiconductor for the purpose of altering its electrical properties; allows control of resistivity/conductivity of semiconductor by several orders of magnitude; also used to convert p-type material into n-type material and vice versa.

dose

typically understood as implantation dose; number of ions crossing one cm2 of the surface of the implanted solid; controlled by ion beam current and implantation time.

implantation energy

kinetic energy of implanted ions established through acceleration; determines depth of solid penetration by the ions, and hence, depth of junction formed; quantitatively expressed by projected range Rp.

implantation damage

during ion implantation accelerated ions collide with atoms in the target material and displace them from their original lattice sites; after implantation crystallographic order of the implanted material is being restored by a brief anneal (typically RTP) at the temperature of 800 oC or higher.

projected range

term used in ion implantation terminology; p.r. is a distance from the surface of implanted material at which implanted ions reach maximum concentration (concentration peak).

Term (Index)

Definition

Plasma Immersion Ion Implantation, PIII

very shallow implantation taking place when the wafer is "immersed" in plasma containing dopant ions; ions are not accelerated toward the substrate, and hence, penetration depth is very shallow; can be used to form ultra-shallow junctions.

doping

introduction of dopant into semiconductor for the purpose of altering its electrical properties; allows control of resistivity/conductivity of semiconductor by several orders of magnitude; also used to convert p-type material into n-type material and vice versa.

ion implantation

ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

ionized gas, specifically a self-contained part of the electrical discharge in gases featuring equal concentration of ions and electrons; plasma contains electrically active species, but as a whole is electrically neutral; ions can be extracted from plasma to play variety of important functions in semiconductor processing.