Abstract

This chapter discusses and presents different designs to screen the polarization level in the quantum wells for [0001]-oriented DUV LEDs. By doing so, the quantum confined Stark effect (QCSE) can be decreased. We suggest a simple way to reduce the QCSE by adopting Si-doped quantum barriers. Meanwhile, we also find that DUV LEDs are very sensitive to the polarization polarity, such that if nonpolar, semipolar and nitrogen-polar DUV LED structures are grown, we shall avoid using the p-AlGaN/p-GaN hole injection layer. The p-AlGaN/p-GaN hole injection layer can have remarkably hole depletion effect at the interface for those growth orientations except the [0001] orientation.