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All Designs（）

To conserve energy while meeting the increasing demand for electricity, Toshiba is promoting the development of various ICs and power devices, ranging from mobile, automotive, and other industrial applications to electric energy conversion equipment.*Toshiba Review (Vol.72, No.5, November 2017)

Smartphones have become an indispensable part of daily life. To enhance the functionality of mobile devices, Toshiba is promoting the development of LDO regulator ICs, featuring superior power supply ripple rejection characteristics, load transient response and low power consumption. *Toshiba Review (Vol.72, No.5, November 2017)

For power transmission and distribution applications, Toshiba has developed and released a line of injection enhanced gate transistors (IEGTs) known as press-pack IEGTs (PPIs) as switching devices for HVDC systems.*Toshiba Review (Vol.72, No.5, November 2017)

Toshiba has been releasing a wide variety of SiC power devices, and are also developing GaN power devices capable of performing high-speed switching operations, including a quasi-normally-off GaN HEMT and GaN MOSFET.*Toshiba Review (Vol.72, No.5, November 2017)

Toshiba developed the TC7738WBG power management IC for cSSD which achieves a reduction in power consumption and package size through the use of Wafer-level chip scale package (WCSP).*Toshiba Review (Vol.72, No.5, November 2017)

In response to a need for a power management function, our PMMCD series ICs are expected to contribute to solution realizing a more compact footprint and cost savings by reducing the size and number of peripheral parts.*Toshiba Review (Vol.72, No.5, November 2017)

Toshiba has been developing a SIMO DC-DC converter equipped with a maximum-on-time (MOT) control technology, and a channel-consolidated multiple-switching (CCMS) control technology for IoT devices. *Toshiba Review (Vol.72, No.5, November 2017)

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Data selection and de-noising based on reliability for long-range and high-pixel resolution LiDAR," 2018 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, 2018, pp. 1-3. doi: 10.1109/CoolChips.2018.8373079 Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8373079)

K. Yoshioka et al., "A 20ch TDC/ADC hybrid SoC for 240×96-pixel 10%-reflection <0.125%-precision 200m-range imaging LiDAR with smart accumulation technique," 2018 IEEE International Solid - State Circuits Conference - (ISSCC), San Francisco, CA, 2018, pp. 92-94. doi: 10.1109/ISSCC.2018.8310199Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8310199)

H. Yamashita et al., "Low noise superjunction MOSFET with integrated snubber structure," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 32-35. doi: 10.1109/ISPSD.2018.8393595Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393595)

W. Saito, "Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET," 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 36-39. doi: 10.1109/ISPSD.2018.8393596Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8393596)

T. Sugiyama et al., "Evaluation methodology for current collapse phenomenon of GaN HEMTs," 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, 2018, pp. 3B.4-1-3B.4-5. doi: 10.1109/IRPS.2018.8353559Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8353559)

Toshiba is promoting the development of a wide variety of advanced automotive semiconductor devices and contributing to the advancement of CASE (Connected, Autonomous, Shared, Electric) technologies.*Toshiba Review (Vol.73, No.6, November 2018)

Y. Yamada et al., "7.2 A 20.5TOPS and 217.3GOPS/mm2 Multicore SoC with DNN Accelerator and Image Signal Processor Complying with ISO26262 for Automotive Applications," 2019 IEEE International Solid- State Circuits Conference - (ISSCC), San Francisco, CA, USA, 2019, pp. 132-134. doi: 10.1109/ISSCC.2019.8662459Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8662459)

Innovations in automotive sensing technologies to support safe driving have been advancing as a result of the practical realization of ADAS. Toshiba is working the development of deep neural network-intellectual property (DNN-IP)、as well as improving conventional recognition technologies for Visconti™*Toshiba Review (Vol.73, No.6, November 2018)

Toshiba is engaged in the development of motor driver IC products for automotive use, which achieve a balance between high-density mounting and reduction of package size in order to realize compact size in-vehicle motor systems *Toshiba Review (Vol.73, No.6, November 2018)

Accompanying the expanding dissemination of eco-friendly automobiles, demand has been increasing for reduction of the power consumption of automotive semiconductor devices.Our Bluetooth LE IC and power amplifier facilitate reduction of the size of in-vehicle electronic systems.*Toshiba Review (Vol.73, No.6, November 2018)

In line with this trend in the development of semiconductor relays, Toshiba Electronic Devices & Storage Corporation has developed and released products including power metal-oxide-semiconductor field-effect transistors (MOSFETs) and controller integrated circuits (ICs) to control the gate on/o_ state of power MOSFETs for automotive. *Toshiba Review (Vol.73, No.6 November 2018)

K. Agawa, R. Ninomiya, M. Takizawa, T. Mori and T. Sakurai, "Connection Structure Using Rubber Connectors in the IoT Edge Platform, Trillion Node Engine," 2018 IEEE CPMT Symposium Japan (ICSJ), Kyoto, 2018, pp. 55-58. doi: 10.1109/ICSJ.2018.8602895
Ⓒ2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8602895)

T. Mizoguchi, Y. Sakiyama, N. Tsukamoto and W. Saito, "High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 307-310 doi: 10.1109/ISPSD.2019.8757656
Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757656)

K. Komatsu et al., "Design Method and Mechanism Study of LDMOS to Conquer Stress Induced Degradation of Leakage Current and HTRB Reliability," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 363-366. doi: 10.1109/ISPSD.2019.8757670
Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757670)

K. Tanabe, H. Kubota, A. Sai and N. Matsumoto, "Inter-Frame Smart-Accumulation Technique for Long-Range and High-Pixel Resolution LiDAR," 2019 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), Yokohama, Japan, 2019, pp. 1-3. doi: 10.1109/CoolChips.2019.8721340
Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any coyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8721340)

Leaves having various functions were developed in this project commissioned by the New Energy and Industrial Technology Development Organization (NEDO), and the practicality and reliability of the platform have been verified.

H. Kobayashi et al., "Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 515-518.
doi: 10.1109/ISPSD.2019.8757691
Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757691)

T. Nishiwaki et al., "Alpha-Particle Shielding Effect of Thick Copper Plating Film on Power MOSFETs," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 91-94. doi: 10.1109/ISPSD.2019.8757695
Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757695)

K. Kobayashi et al., "100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 99-102. doi: 10.1109/ISPSD.2019.8757615
Ⓒ2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. And published article is uploaded in IEEE Xplore (https://ieeexplore.ieee.org/document/8757615)

Data Selection and De-noising Based on Reliability for Long-Range and High-Pixel Resolution LiDAR
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