The UVD and UVE photodiodes exhibit significant advantages over technology used in competing devices such as inversion layer photodiodes, including lower capacitance and higher response times. OSI Optoelectronics’ UVD photodiodes peak at 970 nm. The UVE devices peak at 720 nm and suppress the near-infrared, making them particularly useful in applications where blocking the NIR spectral region is required. Both products can be biased for lower capacitance, wider dynamic range, and high speed response times. Alternatively, the UVD and UVE series may be operated in the photovoltaic (unbiased) mode for situations that require low drift with temperature variations.

Available in varying sizes and footprints, in metal or ceramic packages, OSI’s UV-enhanced planar diffused Si photodiodes are ideal for applications in medical instrumentation, pollution monitoring, spectroscopy, fluorescence, water purification, UV exposure meters, and more. For more information about the planar diffused photodiodes, please go to:

For additional information about the company’s full range of high-performance, light-sensing products for industrial, scientific, military, and OEM solutions, please visit: www.osioptoelectronics.com/.

OSI Optoelectronics, Inc. Hawthorne, California-(www.osioptoelectronics.com), a division of OSI Systems, is the global leader in design and manufacture of high performance standard, custom, and OEM silicon and InGaAs photodiodes. For over 40 years, we have developed and manufactured OEM and custom solutions for leading technologies and industries. We provide advanced optoelectronic components and sub-assemblies for aerospace and defense, security, inspection systems, medical, communications, and industrial automation applications.