Archives: GaN

Researchers at Yale University developed a novel conductivity based selective electrochemical etching to introduce nanometer sized pores into GaN. The fabrication process for the edge-emitting laser cavity samples included cleaving with the LatticeAx 420, diamond-tipped cleaving tool to form the GaN m-plane end facets. See the paper in the Proc. of SPIE Vol. 9748 97480Q-7. For more information contact Ge Yuan, ge.yuan@yale.edu

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LatticeGear has developed solutions for preparing the highest quality scribed and cleaved samples. Our smart mechanical solutions deliver samples with speed and simplicity at low startup cost and without service contracts. LatticeGear solutions enable you to get to the business of analysis faster. LatticeGear is a certified Emerging Small Business (ESB), Women Business Enterprise (WBE) and Minority Business Enterprise (MBE), Certification #10516.

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LatticeGear has developed solutions for preparing the highest quality scribed and cleaved samples. Our smart mechanical solutions deliver samples with speed and simplicity at low startup cost and without service contracts. LatticeGear solutions enable you to get to the business of analysis faster.