Abstract

A charge trapping memory device using film as charge trapping layer and amorphous as the tunneling and blocking layers was fabricated for nonvolatile memory application. nanocrystals are precipitated from the phase separation of filmannealed at . A memory window of 2.3 V and a stored electron density of were obtained. Good retention characteristics of the memory device at were observed due to the deep charge trapping level as identified by the valence band offsets and electron energy loss spectrum measurements.

Received 13 June 2010Accepted 03 September 2010Published online 05 October 2010

Acknowledgments:

This paper was financially supported by the National Natural Science Foundation of China (Grant Nos. 50972054 and 6063601), the National Basic Research Program of China (Grant No. 2010CB934201), and National Key Project (Grant No. 2009ZX02101-4).