Samsung starts mass producing 128Gb 3-bit MLC NAND Flash memory

Samsung has announced that they’ve initiated mass production of128Gb (gigabit) 3-bit MLC NAND flash memory using 10nm process technology. Samsung says this chip offers the highest density in the industry along with performance of 400Mbps based on toggle DDR 2.0 interface.

Samsung will integrate the chip in embedded NAND storage and SSDs and will expand the supply of its 128GB (gigabyte) memory cards and SSDs with capacity over 500GB.

By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs. The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market.