formation of the doped layers which are atomic-layer thick; formed in the course of Molecular Beam Epitaxy (MBE)of multilayer structures such as superlattices.

Molecular Beam Epitaxy, MBE

physical deposition process (basically evaporation) carried out in ultra-high vacuum (below 10-8 torr) and at substrate temperature typically not exceeding 800 oC; due to unobstructed (molecular) flow of species to be deposited and chemical cleanliness of the substrate surface highly controlled growth of ultra-thin epitaxial layers is possible; the highest precision deposition method used in semiconductor processing.