A well established semiconductor manufacturer for the telecommunications sector has an opportunity for a Junior RF IC Design Engineer to be based at their design centre in Essex, UK.

In this position you will be working on RF IC Design in CMOS and BiCMOS technology in the frequency range of 30MHz to 3GHz and will contribute to RF circuit design including; mixers, LNAs, PAs (power amplifiers), oscillators and frequency synthesisers. You will be working in close co-operation with other teams including layout, ATE test and characterisation and will be working to verify measured results and perform debugging, during both the evaluation and production ramp-up phases.

Masters or PhD qualified in Microelectronics or Electrical Engineering, you will have knowledge in RF IC Design in CMOS and/or BiCMOS technology including experience in Cadence design tools and RF blocks such as mixers, LNAs, PAs (power amplifiers), oscillators and frequency synthesisers. You will ideally have system knowledge and experience in the creation of models for off-chip elements e.g. package and PCB. Knowledge of on-chip coupling mechanisms and parasitic layout effects is also desired.