Abstract

The recent observation of a fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron–electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr, and Nb) because only those are not attacked by the reactive acid etching fabrication step. Here we show a new technique that leads to mechanically stable suspended high mobilitygraphene devices and is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm2/Vs at an electron carrier density of n = 5.0 × 109 cm−2 at 77 K. This technique paves the way toward complex suspended graphene based spintronic, superconducting, and other types of devices.

Received 11 November 2010Accepted 17 February 2011Published online 02 May 2011

Acknowledgments:

We would like to thank Bernard Wolfs, Siemon Bakker, and Johan G. Holstein for technical assistance. This work is part of the research program of the Foundation for Fundamental Research on Matter (FOM) and is supported by NanoNed, NWO, and the Zernike Institute for Advanced Materials.