Abstract

Borondiffusion from gas phase was implemented for -type doping of at temperatures in the range of . A two-branch diffusion associated with two different diffusion mechanisms was observed. The activation energy and prefactor were calculated for each diffusion branch, that are and for fast and slow diffusion, respectively. It has been confirmed that the surface layer of diffused boron mostly consists of shallow boron acceptors, while the tail of diffusion profile has mostly deep level centers.