Abstract

In this work we describe a new method suitable for large area nanoimprint lithography. In step&stamp process the pattern on a stamp is transferred into a polymer layer on the substrate by repeating a step&stamp cycle. The method is demonstrated by imprinting matrices of test structures on polymer-coated 100 mm silicon wafers. A new polymer, PPM, is used as resist in the experiments. The polymer has been developed to fulfill the demands of imprint lithography. Patterns with sizes down to 400 nm were imprinted into either 100 nm or 340 nm thick PPM resist. After thinning in oxygen plasma, the resist layer is used as etching mask or for fabrication of interdigitated aluminum fingers by lift-off.

title = "Step and stamp imprint lithography using a commercial flip chip bonder",

abstract = "In this work we describe a new method suitable for large area nanoimprint lithography. In step&stamp process the pattern on a stamp is transferred into a polymer layer on the substrate by repeating a step&stamp cycle. The method is demonstrated by imprinting matrices of test structures on polymer-coated 100 mm silicon wafers. A new polymer, PPM, is used as resist in the experiments. The polymer has been developed to fulfill the demands of imprint lithography. Patterns with sizes down to 400 nm were imprinted into either 100 nm or 340 nm thick PPM resist. After thinning in oxygen plasma, the resist layer is used as etching mask or for fabrication of interdigitated aluminum fingers by lift-off.",

N2 - In this work we describe a new method suitable for large area nanoimprint lithography. In step&stamp process the pattern on a stamp is transferred into a polymer layer on the substrate by repeating a step&stamp cycle. The method is demonstrated by imprinting matrices of test structures on polymer-coated 100 mm silicon wafers. A new polymer, PPM, is used as resist in the experiments. The polymer has been developed to fulfill the demands of imprint lithography. Patterns with sizes down to 400 nm were imprinted into either 100 nm or 340 nm thick PPM resist. After thinning in oxygen plasma, the resist layer is used as etching mask or for fabrication of interdigitated aluminum fingers by lift-off.

AB - In this work we describe a new method suitable for large area nanoimprint lithography. In step&stamp process the pattern on a stamp is transferred into a polymer layer on the substrate by repeating a step&stamp cycle. The method is demonstrated by imprinting matrices of test structures on polymer-coated 100 mm silicon wafers. A new polymer, PPM, is used as resist in the experiments. The polymer has been developed to fulfill the demands of imprint lithography. Patterns with sizes down to 400 nm were imprinted into either 100 nm or 340 nm thick PPM resist. After thinning in oxygen plasma, the resist layer is used as etching mask or for fabrication of interdigitated aluminum fingers by lift-off.