Abstract

A high quality 100-layer InAs quantum dot(QD)structure was successfully grown on InP substrate. The overall compressive strain caused by InAs QDs on is effectively balanced by inserting tensile-strained InGaAs strain-balance layers immediately above QD layers. The cross-sectional transmission electron microscopy images show a low defect density of less than and a smooth interface between QD layers throughout the whole structure. In addition, the intense room temperature photoluminescence indicates a good optical quality of the multilayerQDstructure.

Received 29 December 2005Accepted 02 July 2006Published online 09 August 2006

Acknowledgments:

This work was partially supported by the U.S. Army Research Office MURI program (DAAD19-01-1-0591) and DARPA University Photonics Research Centers program (Hyper-Uniform Nanophotonic Technologies Center, HR0011-04-1-0034). The TEM measurement in this work was carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No.DEFG02-91-ER45439.