Abstract

Photoluminescence (PL) emitted from (111)Cd1−xMnxTe/(111)GaAs:Si heterojunctions produced using pulsed laser evaporation and epitaxy (PLEE) has been studied at 11.5 K. The heterojunctions show PL from the substrate E0 and E0+Δ0 gap regions as well as from the epilayer. The substrate E0+Δ0 signal is particularly sensitive to the epilayer growth temperature and is strongest for samples grown on substrates held at Tg=290 °C. The heterojunction PL also includes a component produced by Si dopant atoms in the substrate that undergo clustering changes as the growth temperature is raised. Through comparison with annealing studies of the substrate, it is argued that the PLEE ablated material possesses sufficient kinetic energy to increase the effective temperature above Tg at the growth surface.