A model for inversion in trench isolation is developed using an analytical model to calculate the surface charge density along the trench sidewall. The model shows that the inversion path takes place… (More)

Hardness assurance methods are examined for several types of optocouplers. A new diagnostic method using reverse-recovery time has a strong correlation with damage in the internal light emitting… (More)

The effects of radiation damage on modern electronic and optoelectronic is discussed. Ionization damage causes degradation in transistors and integrated circuits, and there are new effects -including… (More)

Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected… (More)

Mechanisms for total dose degradation of linear circuits are discussed, including bulk effects, oxide charge buildup and recombination at the Si-SiO2 interface. The dependence of damage on bias,… (More)

InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the… (More)

Hot-carrier-induced degradation due to AC stress on short-channel MOSFETs is discussed. It is observed that pulsed gate voltage stressing with a short falltime (0.7 ns) can cause additional lifetime… (More)