In this study, a research was conducted for comparisons between Hetero Junction (HJ) solar cells and anis type materials. The material Al0.25Ga0.75 As /GaAs is discussed as an example of such a structure and on the other hand the Cd0.25 S0.75 -InP anis type as an example of the solar cells is considered as an example of an anis type in which the properties of low lattice mismatch appear as an advantageous for junction transport. Finally all common junctions are experimented and results show the best efficiency for each with real amounts.