Article Tools

Abstract

Transient behavior of the a-Si : H/Si3N4 metal–insulator–semiconductor (MIS) capacitor and its
relationship to the performance of a-Si:H based active-matrix liquid crystal
displays (AMLCDs) have been analyzed in detail. A relatively slow voltage
decay whose time constant is comparable to the frame period of the LCD is
observed after applying a voltage pulse that drives the MIS capacitor into
the electron accumulation. The voltage decay is due to electron emission from
the localized states at the a-Si : H/Si3N4 interface. It is also found that this voltage transient results
in a shift in the optimum common voltage for the liquid crystal pixel by changing
the temperature and light exposure when an MIS-type capacitor is inserted
between the pixel electrode and the adjacent gate bus-line as the storage
capacitor. This shift in the optimum common voltage affects the image quality
of AMLCDs through image sticking or flicker. A similar effect can occur even
without an MIS-type storage capacitor in high resolution AMLCDs, where the
gate-source parasitic capacitance of the thin—film transistor is comparable
to the net capacitance of the pixel. It is important to take such transient
effects of MIS capacitors into consideration in pixel designing.

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.