Abstract

Networks of siliconnanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure.

We would like to thank Oğuz Gülseren for valuable discussions. This work was supported by The Scientific and Technological Research Council of Turkey (TÜBİTAK) with Project No. 109R037 and German Federal Ministry of Education and Research (BMBF) with Project No. TUR09240. Ü.K. acknowledges Helmholtz-Zentrum Dresden - Rossendorf for supporting his visits in Dresden.