The heterojunction bipolar transistor (HBT) power amplifier blocks are fabricated onto a single lnGaP die; one supports the GSM850/900 bands and the other supports the DCS1800/PCS1900/ B34/B39 bands. Both PA blocks share two common power supply pads. The InGaP die, silicon die, and the passive components are mounted on a multi-layer laminate substrate. The entire assembly is encapsulated with plastic over mold.