Resonant cavity enhanced (RCE) photodiodes are
promising candidates for applications in optical communications
and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE ...

We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of 60 GHz resulting in a bandwidth-efficiency product of 45 GHz.

High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ...

Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency ...

We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents ...

Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on ...

Deep ultraviolet Al0.75Ga0.25N metal-semiconductor-metal photodetectors with high Al concentration have been demonstrated. A metal-organic chemical vapor deposition grown high quality Al0.75Ga0.25N layer was used as a ...

Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ...

Backilluminated ultraviolet metal-semiconductor-metal photodetectors with different spectral responsivity bands were demonstrated on a single Alx Ga1-x N heterostructure. This was accomplished by the incorporation of an ...

Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ...

We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...

We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption ...

The recent developments in high Al-content AlxGa1−xN material growth
technology made it possible to fabricate high performance solar-blind
photodetectors operating in the ultraviolet (UV) spectral region with improved
receiver ...

Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ...

Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap ...

The strong quantum confinement effect in lead selenide (PbSe) colloidal quantum dots (CQDs) allows to tune the bandgap of the material, covering a large spectral range from mid- to near infrared (NIR). Together with the ...