Abstract

We investigated the flat band voltage modulation by insertion of lanthanum oxide into hafnium oxide gate dielectrics. The properties of nanolaminates were precisely modulated by controlling the position of layer at bottom, middle, or top using atomic layer deposition. When the layer was positioned closer to the interface (bottom), the reduction in shift was more effective than the other two cases (middle and top). From our experimental results, we propose that the main mechanism of modulation using layer is dipole moment formation at an interfacial layer between high k gate dielectric and Si substrate.

Received 09 November 2009Accepted 19 February 2010Published online 14 April 2010

Acknowledgments:

This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, Grant No. 10030519). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by Nano R&D program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. 2009-0083749 and 2009-0082853).