H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

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H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof

H01L51/0059—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

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H01L51/5048—Carrier transporting layer

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H01L51/5088—Carrier injection layer

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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Y10T428/31721—Of polyimide

Abstract

An imide derivative represented by the following formula (A). (A) (In the formula, Ra and Rb each represents hydrogen, halogeno, cyano, alkyl, fluoroalkyl, or aryl, provided that at least one of Ra and Rb is fluoroalkyl; and Rc and Rd each represents (un)substituted benzyl, aryl, heterocycle, fluoroalkyl, or imido.)

Description

Specification

New imide derivative, a material for an organic elect port ELEMENT AND les use it was organic elect port ELEMENT

[0002] The organic-elect opening element (hereinafter, "elect port luminescent" and may be abbreviated as "EL"), by an electric field is applied, is input Note than the hole and the cathode that are injected from the anode is a self-luminous element fluorescent substance using the principle of light emission by electron recombination energy.

The organic EL element Tang et reported include tris (8-hydroxy quinolinol) aluminum emitting layers, bird whistle - has a laminated structure of the Rujiamin derivative for the hole transporting layer. The advantages of the product layer structure, to increase the injection efficiency of holes to the emitting layer, to increase generation efficiency of excitons generated by recombination by blocking electrons injected from a cathode and emitting light layer in and the like to confine the generated excitons.

[0004] The layered structure of the organic EL device, a hole transport (injection) layer, two-layer electron transporting light emitting layer, or a hole transporting (injecting) layer, a light emitting layer, 3 of the electron-transporting (injecting) layer layer type and the like are well known. In such multilayer structure devices, order to increase the efficiency of recombination of injected holes and electrons, the device structures and forming methods have been made.

[0005] Conventionally, as a hole-transporting material used in an organic EL device, aromatic di- Amin derivatives or described in Patent Document 1, aromatic fused ring Jiamin derivatives described in Patent Document 2 was known ヽ. The organic EL device using these aromatic Jiamin derivative for the hole transporting material, sufficient for applying voltage to obtain a light emission luminance becomes higher, cause problems of size Kunar such reduction and power consumption device life Te! / I was.

[0006] As a solution to these problems, the electron-accepting it 匕合 of such Lewis acids in the positive hole injection layer of the organic EL element method for doping has been proposed (Patent Documents 3 to 6 etc.). However, used in them Ru electron-accepting compound, contact the manufacturing process of the organic EL elements, Te handling, on, or unstable, or at the time of the organic EL device driving, stability such as heat resistance shortage, there is a problem such that the life is reduced.

Further, Patent is Document 5, 7, the electron-accepting I 匕合 was exemplified in such 8 Tetorafuruo Logistics Xia eaves diacetic methane, small molecular weight! /, Is replaced by or fluorine, by Rukoto, sublimation is a high tool organic EL element in making a vacuum deposition, diffuse into the device, or there is a risk of contaminating the apparatus or device, also you current power S leak by crystallization when made into a device there is a problem and the like.

[0007] Accordingly, the present inventors have proceeded with research by focusing on an imide derivative. Specifically, we are focusing on the naphthalene emission acid diimide derivative and pyromellitic diimide derivatives. This reduction Gobutsu are known to form Amin derivatives and charge transfer complexes of the donor compound (Non Patent Document 2). Also known as an electrophotographic photoreceptor material (Patent Document 9).

[0008] The above imide derivative is an electron accepting property, and is excellent in heat resistance, durability to device degradation due to Joule heat or the like in lower productivity and EL element being driven by decomposition during vapor deposition can be expected .

However, the reduction potential of the imide derivative used as the electron transporting material of an electrophotographic photoreceptor is 1.5 to 1 0. 5V (vs. saturated calomel electrode, hereinafter "vsSCE" hereinafter), and a weak electron-accepting properties. Therefore, to apply the organic EL element was deficient in performance.

[0009] The present invention has been made in view of the above problems, and an object thereof is to provide a good suitable electron-accepting compound as a constituent material of an organic EL device.

Further, it is driven by low voltage and an object to provide a long-life organic EL device. Disclosure of the Invention

[0010] The present invention intensively studied, derived from pyromellitic acid which is an electron-accepting I 匕合 was further novel imide compound to introduce an electron withdrawing group, or a specific imide derivatives, high charge holding the child receptive further been found to improve the heat resistance and electrical characteristics. Then, it was found that when applying this imide derivative in an organic EL element as the organic EL device material, it is possible to realize a low voltage and lifetime of the drive voltage.

[0011] According to the present invention, such as the following imide derivatives are provided.

1. imide derivative represented by the following formula (A).

[Formula 1]

(Wherein, R a and R b are each hydrogen, halogen, Shiano group, an alkyl group, an Furuoroaru kill group or Ariru group, at least one of R a or R b is Ru der Furuoroarukiru group. R e and R d are each a substituted or unsubstituted benzyl group, Ariru group, a heterocyclic, Furuoroarukiru or imido group.)

4. dimethylformamide reduction potential (vs. saturated calomel electrode) gar organic elect port luminescent device material according to any one of 1 to 3 is 0. 5V or more in.

5. an anode and a cathode,

Has an organic thin film layer one or more layers including a light emitting layer between the anode and the cathode, the imide derivative of at least one organic thin film layer according to any one of 1 to 4 or organic elect port ELEMENT organic elect port luminescent device containing a use material.

6. The organic thin film layer, a hole transport layer from the anode side, organic elect port device as described light-emitting layer and an electron transport layer 5 is a laminate comprising in this order.

9. off Seiana輸 Okuso or a hole injection layer containing said imide derivative or organic elect port luminescent element material is further represented by the following formula (III) - Renjiamini 匕合 product 7 or having containing 8 organic elect port device as described in.

(Wherein, R to R are hydrogen, a halogen atom, triflate Ruo Russia methyl group, an alkyl group, an Ari group or heterocyclic. With full alkenyl groups which are to be attached, a naphthalene skeleton, Cal Bazoru skeleton or a fluorene skeleton it may be formed. n is 1 or 2.)

[0012] According to the present invention can provide material for new organic EL element.

Further, according to the present invention, it can be driven at low voltage, and the organic EL element can provide a long life.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] FIG. 1 is a schematic sectional view showing one embodiment of an organic EL device of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

[0014] First, a description will be given imide derivatives of the present invention.

Imide derivatives of the present invention is a compound represented by the following formula (A).

[Of 5]

In formula (A), R a and R b are each hydrogen, halogen, Shiano group, an alkyl group, full Ruoroarukiru group or Ariru group. Provided that at least one of R a or R b is full Oroarukiru group. R e and R d are each a substituted or unsubstituted benzyl group, § aryl group, a heterocyclic, Furuoroarukiru or imido group. Imide derivatives of [0016] Formula (A) has a high electron-accepting properties. In addition, when used as an organic EL element material, it is possible to lower the driving voltage of the device, also improves life. Further, at the time of manufacture of the device, since no scattered inside the film forming apparatus, it also contaminate the film deposition apparatus or organic EL elements.

[0017] Formula (A), the as Nono androgenic atoms represented by R a and R b, fluorine, chlorine is preferred.

[0018] As the alkyl group represented by R a and R b, a methyl group, an isopropyl group, tert- butyl group.

[0024] As Furuoroarukiru group represented by R e and R u, par full O b butyl group, a cyclohexyl group Pafuruoro are preferred.

[0025] As the imide group represented by R e and R d, preferred is such substituents shown below.

[Formula 6]

[0026] imide derivatives of the present invention, for example, be synthesized by reaction of a literature (Macromolecules, 25, 3540 (tetracarboxylic anhydride and Amin compounds synthesized by the methods described (scheme shown in the following scheme) in 1992) be able to.

Imide derivatives of the present invention is preferably a reducing electrostatic position in dimethylformamide (DMF) solution -0. 5V (vs SCE) or more.

By reduction potential uses 0. 5V or more compounds, electron-accepting property is that more strongly. Particularly preferably, it is -0. 4V or more.

It shows a preferred example of the compound represented by formula (A) below. Note that the synthesis examples of the compounds are described in Examples below.

(A- 1) (A-2)

(A-5) (A-6)

(A- 19) (A- 20) will now be described organic EL device material of the present invention.

The organic EL device material of the present invention are pyromellitic acid diimide derivative represented by naphthalene tetracarboxylic acid diimide derivative represented by the following formula (I), or the following formula ([pi). [0029] [I spoon 9]

[0030] where you! /, Te in (I),! ^ To 1 ^ 1 (> are each hydrogen, halogen, Furuoroarukiru group or shea § cyano group. However, those I ^ R 1 ^ all are hydrogen is excluded.

In the formula (II),! ^ 11 ~! ^ 2. Are each hydrogen, halogen, Furuoroarukiru group or Shiano group. However,! Except ^ is what all of the ~ ^ is hydrogen

[0031] imide derivative represented formula (I) or formula ([pi) has an electron-accepting, driving voltage of the device by using the organic EL element can be lowered, also the service life It can be improved.

Further, at the time of manufacture of the device, since no scattered inside the film forming apparatus, film formation instrumentation 置又 guess also contaminate the organic EL element.

[0032] formula (I) and in formula (II),! The ^ to 1 ^ is a halogen atom shown, for example, fluorine or chlorine is preferred.

[0033] where Te you, in the formula (II) and (I),! The ^ to 1 ^ indicates Furuoroarukiru group, for example, tri Furuoromechiru group, penta full O Roe methyl group, per full O b cyclohexyl group, there is perf Ruo b adamantyl group and the like, preferably the triflate Ruo B methyl ,.

By reduction potential uses 0. 5V or more compounds, electron-accepting property is that more strongly. Particularly preferably, it is -0. 4V or more.

[0035] shows the example of the imide derivatives suitable for use as a material for an organic EL device of the present invention below. Note that the examples of synthetic methods will be described in Examples below.

(1 -3) (1 -4)

(1 -5) (1-6)

(1 -7) (1 -8)

(II- 1) CII-2)

(II one 3) (Π- 4)

(II - 9)

[0036] Next, a description will be given organic EL device of the present invention.

The organic EL device of the present invention, between the cathode and the anode, having an organic thin film layer one or more layers including a light emitting layer. And in at least one layer of the organic thin film layer, an imide derivative conductor or the material for an organic EL device of the present invention (hereinafter, including imide derivative, referred to as organic EL device material.) Containing.

[0037] FIG. 1 is a schematic sectional view showing one embodiment of an organic EL device of the present invention.

In the organic EL device 1, an anode 10 on a substrate (not shown), a hole injection layer 20, hole transport layer 3 0, light emitting layer 40, electron transporting layer 50, a cathode 60 are stacked in this order. The element smell Te, an organic thin film layer is a hole injection layer 20, hole transport layer 30, and has a one-emitting layer 40 and electron transport layer 50 Ranaru laminated structure. Of the layers forming these organic thin film layers, at least one layer contains the material for an organic EL device of the present invention. Accordingly, the driving voltage of the organic EL element can be lowered, also can achieve longer life.

The content of this material to the layers forming the organic thin film layer contains the material for an organic EL device of the present invention is preferably 1 to: a L00mol%.

[0038] In the organic EL device of the present invention, the layer in the area (the hole transport band area) between the anode 10 and the light-emitting layer 40, specifically, the hole injection layer 20 or the hole transport layer 30 but preferably it contains the material for organic EL devices of the present invention. Incidentally, as in this embodiment, Te your ヽ the device having both the hole injection layer 20 及 beauty hole transport layer 30, good that the hole injection layer 20 in the anode side contains the material Better ,.

[0039] In the case of using an organic EL device material of the present invention the layer of hole transporting zone, even to form a hole injection layer or a hole transport layer by Chemical compound of the invention alone! /, and it may have use in combination with other materials.

For example, by mixing the organic EL device material and the aromatic Amin derivatives of the present invention, when forming a hole injection injection layer or a hole transport layer, Hue is represented by the formula (ΠΙ) - Renjiamin compounds are preferred .

[Of 11]

[0040] (wherein, R to R are hydrogen, a halogen atom, triflate Ruo Russia methyl group, an alkyl group, Ari group or heterocyclic. With full alkenyl groups which are to be attached, a naphthalene skeleton, Cal Bazoru backbone or a fluorene skeleton may be formed. n is 1 or 2.)

The Hue - the inclusion of Renjiamini 匕合 was in some cases be improved compounds uniformity and film quality when using a alone of the present invention, heat resistance, or a charge injection property.

[0045] The R 21 to R 26 is naphthalene skeleton include a phenylene Le group attached, they may form a force carbazole skeleton or a fluorene skeleton. Note that these are but it may also be substituted with a methyl group.

[0046] The content of the compound of formula (III) for the hole transport layer or a hole injection layer is preferably 0.1 to 99 mol 0/0.

The following illustrates a preferred example of a compound of formula (III).

[0047] [of 12]

(C-7) (C-8)

(C - 9) (C one 1 0)

(C- 1 1)

The configuration of the organic EL device of the present invention, if example embodiment Nag to be limited to the above embodiments, a structure of the following (1) to (15), I also! /,.

[0049] Among these, usually (4), (6), configuration is preferably used in (7), (8), (12), (13) and (15).

The following describes each member constituting the organic EL device of the present invention.

[0050] (translucent substrate)

The organic EL device of the present invention is formed on a transparent substrate. Here U transparent substrate is a substrate for supporting the organic EL element, a light transmittance in the visible region of 400~700nm 50% or more is preferably a flat and smooth substrate having.

In the case where the supporting substrate opposite the light-extraction direction is located is translucent is unnecessary

[0051] (anode)

The anode of the organic EL device plays a role for injecting holes into the hole transporting layer or the light emitting layer, when transparency is required for the anode, indium tin oxide alloy (ITO), tin oxide ( NESA), indium zinc oxide alloy (IZO), gold, silver, platinum and copper. Also it does not require transparency, when a reflective electrode may in addition to their metal, aluminum, molybdenum, chromium, also be used metals and alloys such as nickel.

These materials alone may or force of these materials with each other alloys that may be used can be suitably selected other also is added to the materials elemental of.

When the light emitted from the light emitting layer from the anode, the transmittance of the anode to the emission is preferably increased Ri by 10%. The sheet resistance of the anode is preferably not more than several hundred ΩΖ port. The anode of the thickness of the force usually 10nm~l depending on the material mu m, is preferably selected in the range of 10 to 200 nm.

[0052] (light-emitting layer)

Emission layer of the organic EL device has a combination of the following functions (1) to (3).

(1) Injection function: function field can inject holes from the anode or the hole injecting layer upon application, electrons can be injected from the cathode or electron injection layer functions

(2) transporting function; injected charges (electrons and holes) function by the force of the electric field

(3) Emitting function: electrons and provides the field of recombination of holes, functions holes injected ease and electrons injected Yogumata even if a difference in ease leading the recombination to the emission of light, the hole and Yo even if large and small transport ability represented by the mobility of electrons, but it is preferable to move either electrons.

[0054] As the host material for use in the emitting layer, it has preferably the compounds represented by the following (i) ~ (ix).

Asymmetric anthracene represented by the following formula (i).

[Of 13]

(Wherein, Ar is a condensed aromatic group having 10 to 50 ring carbon atoms substituted or unsubstituted.

Ar, is an aromatic radical having 6 to 50 ring carbon atoms substituted or unsubstituted.

X represents a substituted or unsubstituted aromatic group having 6 to 50 ring carbon atoms, a substituted or unsubstituted 5 to 50 ring atoms aromatic heterocyclic group, a substituted or unsubstituted alkyl group having 1 to 50 carbon atoms , substituted or unsubstituted alkoxy group having 1 to 50 carbon atoms, a substituted or unsubstituted Ararukiru group having 6 to 50 carbon atoms, a substituted or unsubstituted 5 to 50 ring atoms Ariruokishi group, a substituted or unsubstituted Ariruchio group having 5 to 50 atoms forming the number 1 to 50 of carbon atoms of the substituted or unsubstituted alkoxycarbonyl - group, a carboxyl group, a halogen atom, Shiano group, a nitro group, a hydroxyl group.

a, b and c are each an integer of 0 to 4.

n is an integer of 1 to 3. When n is 2 or more, in [] Chiyoi be the same or different. )

Asymmetric monoanthracene derivative represented by the following formula (ii).

[Of 14]

(Wherein, Ar 1 and Ar 2 each independently represents an aromatic ring group substituted or unsubstituted aromatic ring group having 6 to 50, m and n is an integer of 1 to 4, respectively. However, m = If n = l point of attachment to the big one Ar 1 and Ar 2 benzene rings are symmetrically, when Ar 1 and Ar 2 in the same nag m or n is an integer from 2 to 4 the m and n are different integers.

R 31 to R 4 ° each independently represent a hydrogen atom, a substituted or unsubstituted aromatic ring group having 6 to 50 ring carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 5 to 50 ring atoms, if substituted Ku unsubstituted alkyl group having 1 to 50 carbon atoms, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group having 1 to 50 carbon atoms, a substituted or unsubstituted number 6-50 carbon Ararukiru group, a substituted or unsubstituted 5 to 50 ring atoms Ariruokishi group, a substituted or unsubstituted 5 to 50 ring atoms Ariruchio group, a substituted or unsubstituted carbon number 1-50 alkoxycarbonyl - group, a substituted or unsubstituted silyl group, carboxyl group, halogen atom, Shiano group, a nitro group, a hydroxyl group. )

Asymmetric pyrene derivative represented by the following formula (iii).

[Of 15]

(Wherein, Ar 3 and Ar 4 are independently a substituted or unsubstituted aromatic group having 6 to 50 ring carbon atoms.

L 1 and L 2 are each a substituted or unsubstituted Hue - Len group, a substituted or unsubstituted naphthalene - Len group, a substituted or unsubstituted Furuoreniren group or a substituted or unsubstituted dibenzosilolylene group.

m is an integer of 0 to 2, n is an integer from 1 to 4, s is an integer of 0 to 2, t is an integer of 0-4. Further, L 1 or Ar 3 is bonded to any one of 1- to 5-positions of pyrene, L 2 or Ar 4 bonds at any one of 6- to 10-positions of pyrene.

However, when n + t is an even number, Ar 3, Ar 4, L 1, L 2 satisfy the following (1) or (2). (1) Ar 3 ≠ Ar 4 and Z or LL 2 (≠ herein indicates a group of different structures.) (2) eight? ^ Two eight bought! ^ When the two

(2- 1) m ≠ s and Z or n ≠ t, or

When (2- 2) m = s and n = t,

(2- 2- 1) L 1 and L 2, or pyrene is, forces are bonded to different bonding positions location on the Ar 3 and Ar 4 respectively, (2- 2- 2) L 1 and L 2, or Ru optionally bonded to the same position of pyrene force Ar3 and Ar4, L 1 and L 2 or Ar 3 and Ar substitution position location position 1 in 4 of pyrene and 6-positions, or 2- and 7-position there is no case. )

Asymmetric anthracene derivative represented by the following formula (iv).

[Of 16]

(Wherein, A 1 and A 2 each independently is a fused aromatic ring group substituted or unsubstituted aromatic ring group having 10 to 20.

Ar 5 and Ar 6 are independently a hydrogen atom, or a substituted or unsubstituted carbon atoms of 6 to 50 aromatic ring group.

R 41 to R 5 ° each independently represent a hydrogen atom, a substituted or unsubstituted aromatic ring group having 6 to 50 ring carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 5 to 50 ring atoms, if substituted Ku unsubstituted alkyl group having 1 to 50 carbon atoms, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group having 1 to 50 carbon atoms, a substituted or unsubstituted number 6-50 carbon Ararukiru group, a substituted or unsubstituted 5 to 50 ring atoms Ariruokishi group, a substituted or unsubstituted 5 to 50 ring atoms Ariruchio group, a substituted or unsubstituted carbon number 1-50 alkoxycarbonyl - group, a substituted or unsubstituted silyl group, carboxyl group, halogen atom, Shiano group, a nitro group or a hydroxyl group. Ar 5, Ar 6, R 49 and R 5G are each a saturated or unsaturated cyclic structure in adjacent ones Yogu be plural, even.

However, in the formula (iv), the 9- and 10 of the center do not symmetrically composed groups are bonded to X- Y axis shown on the anthracene. )

Anthracene derivative represented by the following formula (V).

[Formula 17]

(Wherein, 1 ~ R bU are independently a hydrogen atom, an alkyl group, a cycloalkyl group, substitution and also good Ariru group, an alkoxyl group, Arirokishi group, an alkylamino group, Aruke - group, Ariruamino group or substituted indicates a heterocyclic group which may be, a and b, respectively are shown an integer of 1 to 5; when they are 2 or more, R 51 s or R 52 together are Oite respectively, the same But different Yogumata R 51 s or R 52 together even though may be bonded to form a ring, and R 53 and R 54, R 55 and R 56, R 57 and R 58, R 59 . R 6 may be bonded to form a form a ring L 3 represents a single bond, -O-, one S-, - N (R) - (R good be alkyl or substitution Ariru a group), an alkylene group or Ariren group.)

Anthracene derivative represented by the following formula (vi).

[Of 18]

(Wherein, R 61 to R 7G are independently a hydrogen atom, an alkyl group, a cycloalkyl group, § Li Lumpur group, an alkoxyl group, Arirokishi group, an alkylamino group, an s to Ariruamino group or substitution indicates a cyclic group, cd, e and f are each an integer of 1 to 5, when it al is 2 or more, each other R 61, R 62 together, with each other or R 67 together R 66, at each Yogumata R 61 together be the same or different, R 62 to each other, R 66 s or R 67 s may be bonded to each other to form a ring, R 63 and R 64, R 68 and R 69 is . each other may be bonded to form a ring L 4 is a single bond, -0-, -S -, - N (R) - (R is a good Ariru group be an alkyl group or substituted) , an alkylene group or an Ariren group.)

[0060] spiro fluorene derivative represented by the following formula (vii).

[Formula 19]

(Wherein, A 5 to A 8 each independently represent a substituted or unsubstituted Bifue - group or a substituted or is unsubstituted naphthyl group.)

[0061] fused ring-containing compound represented by the following formula (viii).

[Of 20]

(Wherein, A 9 to A 14 are as defined above, R 71 ~! ^ Are each independently a hydrogen atom, an alkyl group of 1 to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, 1 to 4 carbon atoms 6 alkoxyl group, Ariruokishi group having 5 to 18 carbon atoms, Ararukiruokishi group having 7 to 18 carbon atoms, the number 5-16 of Ariruamino group carbon atoms, a nitro group, Shiano group, having 1 to 6 carbon atoms ester group or halogen represents an atomic, at least one of a 9 to a 14 is a group having 3 or more fused aromatic rings.)

Furuoreni 匕合 compounds represented by the following formula (ix).

[Of 21]

(Wherein, R and R are a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted Ararukiru group, a substituted or unsubstituted Ariru group, a substituted or unsubstituted heterocyclic group, a substituted amino group, Shiano each other R 74 to bind to. different fluorene groups represents a group or a halogen atom, each other R 74 may be different even in the same, 74 and 75 bonded to the same fluorene group, different than the same even though it may. R 76 and R 77 each represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted Ararukiru group, the substitution or unsubstituted Ariru group, or a substituted or unsubstituted heterocyclic group , between R 76 which binds to the fluorene group that different, each other R 77 is R 76 and R 77 Yogu bonded to the same fluorene group optionally substituted by one or more identical, different even with the same Even though it may. Ar 7 and Ar 8, a total of three or more substituted or unsubstituted fused polycyclic aromatic group or a benzene ring and a heterocyclic ring total of three or more substituted or unsubstituted benzene ring represents a fused polycyclic heterocyclic group bonded to the full Oren group carbon, Ar 7 and Ar 8, be the same or may be also have been different. n represents an integer of 1 to 10.)

[0064] As the light emitting material, it is also possible to use a phosphorescent compound. When using the phosphorescent compound, ヽ preferred is compound host material comprises a force carbazole ring. The dopant is a compound capable of emitting triplet exciton force, triple Ko励 elevators force is not particularly limited so long as it can emit light, Ir, Ru, Pd, Pt, at least one selected the group force becomes Os and Re force One thing preferred metal is a metal complex containing tool porphyrin metal complex or Orutometarui spoon metal complex is preferable.

Suitable host compound force consisting phosphorescent including force carbazole ring, in its excited state Kararin-emitting I 匕合 product results energy transfer takes place to a compound having a function of emitting light the phosphorescent compound is there. Particularly limited if the compound can transfer its excited energy to a phosphorescent I 匕合 was as Hosutoi 匕合 material may be appropriately selected depending on the Nag purposes. A force carbazole any heterocyclic ring other than the ring or the like, may be.

Phosphorescent dopant is a compound capable of emitting triplet excitons force. Is not particularly limited so long as it can emit light even triplet exciton force, Ir, Ru, Pd, Pt, be a metal complex containing at least one metal selected the group forces consisting Os and Re forces Preferably, the porphyrin metal complex or Orutometarui spoon metal complexes are preferred. The porphyrin metal complex thereof, porphyrin platinum complex is preferable. Phosphorescent it 匕合 comprises may be used alone or in combination of two or more.

As the ligand to form a Orutometarui spoon metal complex there are various things, preferred ligands, 2-phenylene Rubirijin derivatives, 7, 8 base Nzokinorin derivatives, 2- (2 Choi - Le) pyridine derivatives, 2- (1-naphthyl) pyridine derivatives, 2-Hue - Rukinori emissions derivatives. These derivatives may have substituents, if necessary. In particular, fluoride, good preferable is as force blue dopant introduced with triflate Ruo b methyl group. Furthermore § cetyl § Seto diisocyanate as the auxiliary ligand, we have the ligands other than the ligands, such as picric acid, also good.

The content of a phosphorescent dopant in an emitting layer, a force such as especially limited can be appropriately selected depending on purpose of Nag, a 0.1 to 70 wt%, 1 to 30 mass% preferable. Phosphorus less than the content 0.1% by weight of the light emitting arsenide compounds are weak luminescence its content effect is not sufficiently exhibited, if more than 70 wt%, remarkable phenomenon dividing concentration quenching and word to become the device performance is degraded.

[0068] The light-emitting layer, a hole transporting material as needed, an electron transporting material, may contain a polymeric binder.

The thickness of the light-emitting layer is preferably 5 to 50 nm, more preferably 7 to 50 nm, and most preferably 1 0 to 50 nm. Emitting layer formation becomes difficult at less than 5 nm, there is a risk that the adjustment of chromaticity may become difficult, there is a possibility that the driving voltage exceeds 50nm is increased.

[0069] (a hole transport layer: a hole injection layer)

The hole transporting layer is a layer for helping the injection of holes into the emitting layer so as to transport it to the light emitting region, hole mobility is large instrument Ioni spoon energy normally 5. 5 eV or less and small. Material which transports holes to the light emitting layer is preferably at a lowerヽfield strength as such a hole transport layer, further hole mobility, for example, 10 4 ~10 6 VZcm upon application of an electric field of at least 10 _4 if cm 2 / V · sec preferable.

[0070] As described above, when an organic EL device material of the present invention in the hole transporting zone, I also form a hole transport layer in this onset Ming compound alone, then, mixed with other materials to be used in not good. In the case of mixing, Hue is represented by the formula (III) - Renjiamini 匕合 product is not preferred.

While with force, known as the mixtures used formula (III) compound being limiting those in the Nag other, and Ru ones are conventionally used as hole charge transporting materials, the hole injection layer of an EL element Yo, it is used to select an arbitrary one from those.

In the case where a layer other than the hole transporting zone comprises material of the present invention, the mixed material the following be to form a hole transport layer alone.

[0074] It is also possible to use other aromatic dimethylidene type compounds, p-type Si, inorganic compounds such as p-type SiC as the material of the hole injection layer.

[0075] The hole injection layer, the film thickness of the hole transport layer is not particularly limited, usually 5Itapai! It is a ~ 5 μ m. Hole injection, if the transport layer long as it contains the compound of the present invention in the hole transporting zone, I be composed of one layer which also one or two or more force above mentioned materials!, And, or the hole injecting, transporting layer of a compound different mosquito ゝ et consisting hole injection and may be one in which the transport layer are stacked.

[0076] Although a part of the organic semiconductor layer is also a hole transport layer, which is a layer for helping the injection of holes or electrons into the emitting layer, those having a conductivity of more than 10 _1 SZcm Ru suitable der. As the material of such an organic semiconductor layer, electroconductive oligomers such as including § reel § Min oligomers disclosed in containing Chio Fen oligomer Ya Hei 8-1 93191, JP-conductive, such as including § reel § Min dendrimers it can be used sexual dendrimers.

[0077] (electron injecting, transporting layer) The electron injection layer 'transport layer helps injection of electrons into the light emitting layer to transport it to the light emitting region, and has a large electron mobility. Furthermore, adhesion improving layer is good, especially adhesion to the cathode among the electron injection layer is a layer of material.

The electron transport layer number nm~ number; be appropriately chosen in a film thickness of zm, particularly when thick film thickness, electrodeposition in order to avoid pressure rising, 10 4 to 10 6 electron mobility when an electric field is applied in VZcm at least 1 0 _5 cm it is preferably at 2 ZVs more.

As the material for the electron injection layer, metallic complexes and Okisajiazoru derivatives of 8-hydroxyquinoline or derivatives thereof are preferred. Specific examples of the metal complexes of 8-hydroxyquinoline or its derivatives, Okishin (generally 8-quinolinol or 8-hydroxycarboxylic quinoline) metal chelating O carboxymethyl maytansinoid I 匕合 containing chelates, such as tris (8 - quinolinol) aluminum can be used as the electron injecting material.

[0078] On the other hand, the Okisajiazoru derivative include electron transfer compounds represented by the following general formula.

[0079] [of 23]

[0080] (wherein, Ar 11, Ar 1 ', Ar ", Ar, Ar lb, Ar 19 each represent a substituted or unsubstituted Ariru group may each also being the same or different. The Ar14, Ar 17, Ar is represents a substituted or non-substituted Ariren group, or different from each other be the same! /, it has good too)

Here Hue as Ariru group - group, Bifuwe - Lil group, an anthryl group, a perilenyl group and a pyrenyl group. As the Ariren group Hue - alkylene group, a naphthylene group, bi Hue - Len group, anthrylene group, a perylenylene group, pyrenylene group, and the like. As the location substituent alkyl group having 1 to 10 carbon atoms, and alkoxy group or Shiano group having 1 to 10 carbon atoms. The electron transfer I 匕合 was favored which can form thin films.

[0081] c which may be mentioned below as specific examples of the electron-transporting匕合product

[0082] [of 24]

[0083] Further, as a material for the electron injection layer and the electron transport layer, leaving at be used Chinochi represented by the following formula (1) to (6).

[0084] [of 25]

[0085] (In the formula (1) and (2), A to A are independently a nitrogen atom or a carbon atom c

A 1 represents a substituted or unsubstituted Ariru group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 60 carbon atoms of, is a hydrogen atom, a substituted or unsubstituted carbon the number of 6 to 60 of Ariru group, a substituted or unsubstituted heteroaryl group having 3 to 60 carbon atoms of a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, or substituted or unsubstituted carbon atoms 1 20 alkoxy group, or a these divalent groups. However, either one of Ar 21 and Ar 22, a substituted or unsubstituted aromatic ring group having 10 to 60 fused ring group, or a substituted or unsubstituted mono hetero fused ring group having 3 to 60 carbon atoms, or, this is a divalent group of these.

Ar 23 is a substituted or unsubstituted Ariren group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroarylene group to having 3 to 60 carbon atoms to.

L 11, L 12 and L 13 each independently represent a single bond, a substituted or unsubstituted aromatic ring group having 6 to 60 of Ariren group, a substituted or unsubstituted heteroarylene group having 3 to 60 carbon atoms to the, or a substituted or unsubstituted Furuoreniren group.

R 81 is a hydrogen atom, a substituted or unsubstituted Ariru group having 6 to 60 carbon atoms, substituted or is unsubstituted heteroaryl group having 3 to 60 carbon atoms to the number of carbon atoms of the substituted or unsubstituted 1-2 0 alkyl group, or a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, n is an integer of 0 to 5, when n is 2 or more, even if a plurality of R 81 may be the same or different Yogu also attached at each other group a plurality of R 81 adjacent, may form a carbocyclic aliphatic ring or a carbocyclic aromatic ring.

R 82 is a hydrogen atom, a substituted or unsubstituted Ariru group having 6 to 60 carbon atoms, substituted or is unsubstituted heteroaryl group having 3 to 60 carbon atoms to the number of carbon atoms of the substituted or unsubstituted 1-2 0 alkyl group, or a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, or L n-Ar 21 - is Ar 22. Nitrogen-containing heterocyclic derivative represented by).

HAr-L 14 -Ar 24 -Ar 25 (3)

(Wherein, HAr is substituted a nitrogen-containing heterocyclic ring which may having 3 to 40 carbon atoms, L 14 is a single bond, a good number of carbon atoms from 6 may have a substituent 60 Ariren group, have a substituent!, even I, has a heteroarylene group or substituent to the 3 to 60 carbon atoms! /, it also! /, is a full Oreniren group, Ar 24 is a divalent aromatic hydrocarbon group which has carbon atoms which may 6 to 60 have a substituent, Ar 25 is Ariru group of carbon atoms which may 6 to 60 have a substituent or have a substituent, I also, nitrogen-containing heterocyclic derivative you express by a heteroaryl group of 3 to 60 carbon atoms.).

[0090] (wherein, R 91 to R 98 and Z 2 are independently a hydrogen atom, a saturated or unsaturated hydrocarbon group, an aromatic group, a heterocyclic group, a substituted amino group, a substituted boryl group, an alkoxy represents a group or § Li one Ruokishi group, chi 12, gamma 12, and z 1 are each independently a saturated or unsaturated carbon hydrocarbon group, an aromatic group, a heterocyclic group, a substituted amino group, an alkoxy group or Ariruokishi represents a group, Z 1 and the substituents Z 2 are Yogu n also form a condensed ring bonded to each other represents the integer of 1 to 3, when n is 2 or more, Z 1 is different may. However, n is an 1, X 12, Y 12 and R 92 turtles methyl group, R 98 is a hydrogen atom or a substituted boryl group, and n is Z force S methylation group 3 borane derivatives represented by the case does not contain.).

[0091] [of 28]

[0092] wherein, Q 1 and Q 2 each independently represent a ligand represented by the following formula (7), L 15 is a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted substitution of a cycloalkyl group, a substituted or unsubstituted Ariru group, a substituted or unsubstituted heterocyclic group, oR '(R' is a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted Shikuroa alkyl group, a substituted or unsubstituted Ariru group, a substituted or unsubstituted heterocyclic group) or -. O Ga- Q 3 (Q 4) (Q 3 and Q 4, represented by the same) and Q 1 and Q 2 to table a ligand. ]

[0093] [of 29]

[0094] [wherein rings A 24 and A 25 are'll have a substituent! A 6-membered Ariru ring structure fused together. ]

[0095] The metal complex is larger nature of an n-type semiconductor is strong instrument electron injecting ability. Furthermore, the energy generated at the time complexation, bonding between the metal and the ligand of the formed metal complex becomes strong, and large summer also fluorescence quantum efficiency as a luminescent material.

[0096] In a preferred embodiment of the present invention, region or in an interfacial region between the cathode and the organic layer transporting electrons, there is a device containing a reducing dopant. The reducing dopant is defined electron transporting compound as a substance which can reduce. Therefore, as long as it has a certain reducing, various ones can be used, for example, alkali metals, alkaline earth metals, rare earth metals, oxides of alkali metals, halides of alkali metals, alkaline earth metals oxides, alkaline earth metal Harogeni 匕物 halides Sani 匕物 or rare earth metal of the rare earth metals, organic complexes of alkali metals, alkaline earth metals organic complexes, the group power selection made organic complex force of a rare earth metal at least one material may be suitably used.

Among these, more preferable reductive dopant, K, at least one alkali metal selected from the group consisting of Rb and Cs, more preferably, Rb or Cs, the most favorable Mashiino is a Cs is there.

[0098] These alkali metals are particularly a relatively small amount of added pressure to the reducing capacity high instrument electron injecting zone can enhance luminance intensity and lifetime of the organic EL device. Further, as a work function 2. 9 eV or less of the reductive dopant, the two or more combinations of the alkali metals is also preferable device in particular, the combination containing Cs, such as Cs and Na, Cs and K, Cs and R b or it is preferably a combination of Cs and Na and K! /,.

By including a combination of cs, can be efficiently exhibit the reducing ability by hydrogenation mosquito 卩 to the electron injecting zone, Ru enhance luminance intensity and lifetime of is achieved in the organic EL device.

[0099] may further include an electron injecting layer made of an insulator or a semiconductor and disposed between the cathode and the organic layer in the present invention. In this case, it is possible to effectively prevent a current leak, thereby enhancing electron injectability.

Such insulation is preferred to use the alkali metal chalcogenides, alkaline earth metal Karukoge ruler's private property, at least one metal compound selected from the group consisting of halides and alkaline earth metal halides of alkali metals . If Re ヽ consists of an electron injection layer strength S these alkali metal chalcogenide or the like, preferred in terms of being able to further improve the electron injection property.

[0101] Further, as the semiconductor constituting the electron transporting layer, Ba, Ca, Sr, Yb, Al, Ga, In, Li, Na, Cd, Mg, Si, Ta, at least one element of Sb and Zn oxide containing, nitrides or include alone or in combinations of two or more such Sani 匕窒 product.

The inorganic compound constituting the electron transporting layer is preferably a microcrystalline or amorphous insulating thin film. When the electron transporting layer is formed of the insulating thin films, more uniform quality thin film can be formed, Note thereby reducing pixel defects such as dark spots, as such inorganic compounds, the above-mentioned alkali metal calcogenides, alkaline earth metal chalcogenides, halo Geni 匕物 like halides of alkali metals and alkaline earth metals.

[0102] (cathode)

Small work function as a cathode (4 eV or less) metal, alloy, and an electroconductive compound and these mixtures is used as the electrode material. Is an example of such an electrode material include sodium, sodium mono-potassium alloy, magnesium, lithium, magnesium 'silver alloy, aluminum / Sani匕 aluminum, aluminum' lithium alloy, indium, rare earth metals and the like .

The cathode 〖possible to form a thin film by a method such as vapor deposition or sputtering of the electrode material Koyori, can be manufactured.

[0103] When taking out the cathode power light emitted from the light emitting layer, where the transmittance of the cathode to the luminescence is preferably greater than 1 0%.

The sheet resistance of several hundred Ω Z opening following the preferred tool thickness of the cathode is usually ΙΟηπ! ~ 1 mu m, preferably 50 to 200 nm.

[0104] (insulating layer)

The organic EL has since an electric field is applied to ultra-thin films, it tends to form defects in pixels due to leak and short circuit. To prevent this, it is preferred to insert an insulative thin layer between the pair of electrodes.

Can be manufactured organic EL element by more than illustrative materials by an anode, a light-emitting layer, hole injecting layer if necessary, and If necessary to form an electron injection layer or the like, to form a cathode. Also from the cathode to the anode, it is also possible to fabricate an organic EL device in the reverse order. [0106] Hereinafter, we describe the production example of the organic EL element in which an anode Z hole transport layer Z emitting layer Z electron transport layer Z cathode on a transparent substrate is sequentially provided.

First appropriate transparent thin films becomes anode material force 1 mu m or less on a substrate, preferably forming an anode by a method such as vapor deposition or sputtering to have a thickness of the range of 10~2 OOnm.

Next, a hole transport layer on the anode. Formation of hole transporting layer, vacuum evaporation method as described above, a spin coating method, casting method, the force uniform film is Ya immediately and pinholes obtained which can be carried out by LB method and the like hardly occurs it is preferable that form the point force equal vacuum deposition method.

[0107] When forming the hole transport layer by vacuum vapor deposition process, is to be used (material for the hole transport layer), that different desired crystal structure or recombining structure of the hole-transporting layer, and others. force general deposition source temperature 50 to 450 ° C, vacuum degree of 10 one 7 ~ 10 _3 torr, vapor deposition rate 0. 01~ 50nmZ sec, substrate temperature - 50 to 300 ° C, suitably in the range of thickness 5nm~5 μ m it is preferable to select.

[0108] Next, an emitting layer on the hole transport layer. Formation of luminescent layer also, a vacuum deposition method using a desired organic luminescent material, sputtering, spin coating method, the organic light - emitting material can be formed by thin film I spoon by casting or some other method, uniform film can give is Ya immediately and pinholes Lumpur is difficulty occurs, it is preferable to form by a vacuum vapor deposition method in terms of equal. When the EML is formed by vacuum deposition, the deposition conditions vary depending on a compound used, it can be generally selected from conditions similar to those for the hole-transporting layer.

[0109] Next, an electron-transporting layer is formed on this emitting layer. The hole-transporting layer and the emitting layer, is preferably formed by vacuum deposition because a homogenous film is required. Conditions for the deposition hole transport layer can be selected conditions similar to those for power and light emitting layer.

[0110] Finally it is possible to obtain an organic EL device by laminating the cathode.

Cathode but also metal force is constituted, it is possible to use a vapor deposition method, sputtering. Vacuum deposition is preferred in order to protect also forces damaging forces at the time of film underlying organic layers are. Preparation of the organic EL device has been described so far preferred to prepare from a consistently positive in one vacuuming up shade pole. [0111] The method for forming each of the layers the organic EL device of the present invention is not particularly limited. Specifically, vacuum deposition method, molecular beam deposition method (MBE method), or Deitsubingu method using a solution prepared by dissolving in a solvent the material, spin coating method, a casting method, a bar coating method and a roll coating method it can be formed by a known method by.

[0112] The thickness of each organic layer of the organic EL device of the present invention is not particularly limited, generally it is necessary when high applied voltage thickness is too a defect such as pinholes is too thick to Ya immediately opposite occurs thin Ri because the efficiency is deteriorated, in the range of several nm to 1 mu m is preferable.

[0113] The organic EL device emits light when a voltage is applied between the electrodes. When applying the dc voltage to the organic EL element, the anode + cathode in the one polarity, can be observed applying Then emitting a voltage of 5 to 40 V. Incidentally, electric current does not flow by applying a voltage in the reverse polarity, no light is emitted at all. The anode in the case where an AC voltage is applied, uniform emission only when the cathode was One Do to one polarity are observed. !, An optional AC waveform applied to.

[Example]

[0114] Hereinafter, an organic EL device material and the organic EL device of the present invention will be described with reference to examples in details, the present invention as long as not exceeding the gist thereof it is not limited to the following examples still shows the structures of the compounds synthesized in the examples below.

[0116] Results of measuring the infrared absorption spectrum (IR) of the resulting I匕合product, absorption of Cal Boniru group was confirmed at 1715 cm _ 1. In addition, MZZ = 640 has been confirmed by mass spectrometry.

Naphthalene tetracarboxylic acid anhydride 5. lg, was put in dimethyl formamide (DMF) 45 ml, stirring at room temperature, p triflumizole Ruo Russia methyl § - was added dropwise phosphorus 6. solution dissolve the 7g to DMFlOml, 1 time and the mixture was stirred. This was followed by heating for 3 hours and stirred at 0.99 ° C. After cooling, the precipitated solid was filtered. Performed Asetonitoriru force recrystallization, further subjected to sublimation purification to obtain a a pale pink solid (1-1) 5. Og.

[0119] measures the infrared spectrum of this compound (IR), carboxymethyl to 1710 cm _ 1 - absorption Le group was confirmed. MZZ = 554 has been confirmed by mass spectrometry.

This compound was dissolved in DMF, and a solution of 0.01 mol Z l, was measured reduction potential similarly by Size Lee click 'voltammetry as in Example 1. As a result, the reduction potential was -0. 33 V.

Results of the measurement of the reduction potential in the same manner as in Example 2, was 0. 33V.

[0121] Example 4

Synthesis of (I 6)

Was charged naphthalene tetracarboxylic anhydride 4. 6 g in DMF45ml, husk while stirring at room temperature, 4-amino-1, 2 lid opening - tolyl 5. 2 g was added dropwise a solution prepared by dissolving DMFlOml, and stirred for 1 hour. This was followed by heating for 3 hours and stirred at 0.99 ° C. After cooling, 50 ml of methanol was charged, and the precipitated solid was filtered. Asetonitoriru force is also recrystallized and further subjected to sublimation purification, 3. give 7g (1-6) as a pale yellow solid.

The substrate with transparent electrode lines was mounted on a substrate holder of a vacuum deposition apparatus, so as to cover the transparent electrode on the surface where the transparent electrode line is formed with a thickness 60 nm, Example 1 in the synthesized (A- 1) and a compound represented by the following formula (C- 1), 2: 98 was formed so that the ratio (molar ratio). The mixed film, that acts as a hole injection layer.

Subsequently, a film thickness of 20nm on the mixed film was formed a layer of a compound represented by the following formula (HTM- 1). This film functions as a hole transporting layer.

Furthermore it was deposited a compound represented by the following formula having a film thickness of 40 nm (EM1). As light emission molecules simultaneously, Amin compound having a styryl group following the (D1), EM1 and D1 weight ratio power 0: was deposited such that 2. This film functioned as an emitting layer.

[0124] thereby forming a compound represented by the following formula (Alq) on this film with a thickness of 10 nm. This functions as an electron injection layer. Thereafter, a reductive dopant Li (Li source: Saesugetta one company Ltd.) and Alq were co-deposited, eight MakumakuAtsu as an electron injection layer (cathode) ^) !!!!!) was formed. The Alq: Li film by depositing metal A1 to form a metal cathode organic EL light emitting element form forms 7 this the on.

Shows a driving voltage at a current density LOmAZcm 2, the initial luminance 1,000 nit, room temperature, a result of measuring the half life of emission at DC constant current driving with 1.

[Of 31]

A 1 q

[0126] Example 7

When forming the hole injection layer, with the exception of using the synthesized (1-6) in Example 4 instead of (A- 1), an organic EL device was formed in the same manner as in Example 6, was evaluated .

The results are shown in Table 1.

[0127] Comparative Example 1

Except that the hole injection layer was formed with compound alone represented by the formula (C-1), an organic EL device was formed in the same manner as in Example 6, was evaluated. The results are shown in Table 1.

[0128] [Table 1]

Industrial Applicability

[0129] imide derivative or an organic EL device material of the present invention, the material of the organic EL device, in particular, a hole transport layer, it is preferable to form the HIL. Also it can be used as the charge transporting material of an electrophotographic photoreceptor. Other useful also as an organic photosensitive material or an organic solar cell material.

The organic EL device of the present invention, the planar light emitter or a display backlight light source such as a, a cellular phone, PDA, car navigation, a display unit such as a car instrument panel, can be suitably used for lighting or the like.

Claims

Imide derivative represented by the range formula (A) according to.

[Formula 1]

(Wherein, R a and R b are each hydrogen, halogen, Shiano group, an alkyl group, an Furuoroaru kill group or Ariru group, at least one of R a or R b is Ru der Furuoroarukiru group. And R d They are each a substituted or unsubstituted benzyl group, Ariru group, a heterocyclic, Furuoroarukiru or imido group.)

[5] an anode, a cathode, has an organic thin film layer one or more layers including a light emitting layer between the anode and the cathode, wherein the at least one layer any of claims 1 to 4 wherein the organic thin film layer organic elect port Ruminessen scan device containing the imide derivative or organic elect port luminescent device material.

[6] The organic thin film layer, a hole transport layer from the anode side, organic elect port device as described light-emitting layer and the electron transport layer to claim 5, which is a laminate comprising in this order.

Claims and containing not Renjiamini 匕合 product - [9] Seiana輸 Okuso or a hole injection layer containing said imide derivative or organic elect port luminescent element material is further off represented by the following formula (III) organic elect port device as described in 7 or 8.

[Formula 4]

(Wherein, R to R b is hydrogen, halogen atom, triflate Ruo Russia methyl group, an alkyl group, an Ari group or heterocyclic. With full alkenyl groups which are to be attached, a naphthalene skeleton, Cal Bazoru skeleton or a fluorene skeleton may be formed. n is 1 or 2.)