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Abstract

An optically tunable and detectable magnetoeletric (ME) effect has been discovered in the composite consisting of InGaN/GaN multiple quantum wells and magnetostrictive ferromagnetic Ni or FeCo thin films at room temperature. Due to the interactively optical and piezoelectric properties of nitride semiconductors, this composite provides an intriguing optically accessible system, in which the magnetoelectric effect can be both easily tuned and detected. The underlying mechanism can be well accounted for by the interplay among magnetostrictive, piezoelectric and optical transition. It thus offers a new paradigm to generate artificial material systems with magnetic/electric/optical inter-related/controllable properties.

Figures (7)

(a) Photoluminescence spectra of InGaN/GaN MQWs under different excitation power density with an excitation wavelength of 325 nm, (b) and (c) Raman scattering spectra of InGaN/GaN MQWs with an excitation wavelength of 325 nm.

Raman scattering spectra of (a) FeCo-coated and (b) uncoated InGaN/GaN MQWs under different applied magnetic field. (c) Frequencies of InGaN A1(LO) phonon mode in FeCo-coated InGaN/GaN MQWs and the calculated strain as a function of applied magnetic field. The inset shows the hysteresis curve of FeCo-coated InGaN/GaN MQWs with the applied magnetic field parallel to the sample plane. [22]