Insight Product Company offers Microwave Silicon Limiter PIN Diodes with p+-i-n+ structures are designed to be used in microwave protective devices included in hybrid integrated circuit (HIC) hermetically sealed, design of which provides protection against moisture, salt, fog, mycelial fungus, hoarfrost, dew, decreased and increased pressure.

Features:

Mesa construction
SiO2 Passivation
Gold metallisation

Electrical Specification @ +25°C

Model

Capacitance
@ UR=0 Volts (pF)

Maximum Forward Resistance @
10 mA, 2÷4 GHz
(Ohms)

Minimum Reverse Voltage
@ 10 A (Volts)

Maximum Forward Voltage
@ 10 A (Volts)

Maximum Switching
Time @ 10 Volts (ns)

@ 10 mA

@ 100 mA

IP-LIM-5

0.40÷0.60

1.0

60

0.9

20

50

IP-LIM-1

0.30÷0.45

0.9

80

0.85

15

50

IP-LIM-2

0.30÷0.45

0.9

70

0.85

15

50

IP-LIM-3

0.30÷0.45

1.0

80

0.85

15

50

IP-LIM-4

0.30÷0.45

1.0

70

0.85

15

50

IP-LIM-5/2

0.30÷0.45

1.0

60

0.85

15

50

Maximum Ratings

Parameter

AbsoluteMaximum

Temperature

Operating

-60°C to +75°C

Storage

-65°C to +85°C

Pulse power

100 Watt

Duty cycle

0.01

Pulse duration

26 s

Chip bonding

In the process of chip bonding into HIC "minus" electrode should be soldered using acid-free flux at temperature no more than +
270 °C during no more than 5 sec.
It is allowable to mount diode with a current conducting glue, T_hardening =150°C during 5 min or T_hardening = 120°C during 15 minutes.

The glue should have the following characteristics: bulk resistance no less than 0.0004 Ohm, thermal resistance 6.7 - 7 C/W, thermal conductivity 29 WmK

Microwelding by ribbon and wire
Band of typical values of diode total capacitance as a function of reverse voltage.

Thermocompression bonding is recommended. Wire diameter and ribbon width have to be less than anode contact diameter.

Typical pressure in microwelding has to be no less than 20 grams and no more than 30 grams.

A stage should be heated up to about 350°C. Mounting of “plus” contact is admitted by microwelding.