Hynix Semiconductor has developed 2-gigabit (2Gb) low-power DDR2 DRAM for mobile applications such as smartphones and tablet PCs, with volume production slated for the first half of 2010.

Hynix said its new mobile DRAM, which is manufactured using the company's 40nm-class process technology, utilizes a 1.2V low voltage operation. The device processes up to 4.26-gigabytes (4.26GB) of data per second with a 32-bit I/O, providing high bandwidth.

The new 44nm mobile DRAM runs at up to 1,066 megabits per second (Mbps), and is offered in small-form-factor packages such as multi-chip package (MCP) and package-on-package (POP).

As of 2013, the 10 ASEAN nations had a total of over 700 million mobile subscriptions, with the CAGR from 2003-2013 reaching 24%. This Digitimes Research Special Report analyzes the various mobile broadband markets in ASEAN and looks at the respective trends in 4G LTE development for those markets.

This Digitimes Research Special Report analyzes the strategies of key China-based major panel makers BOE, Tianma and IVO for attacking the different market segments through technology and pricing, and their relationship to local vendors Huawei, Lenovo, ZTE, Xiaomi and Coolpad.