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This story was printed from CdrInfo.com,
located at http://www.cdrinfo.com.
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SK hynix, the world's second-biggest memory
chipmaker, said Wednesday it has developed an advanced chip
that boasts 6-gigabit capacity with Low Power DDR3.

The 6Gb LPDDR3 (Low Power DDR3) was made using
the company's 20nm class process technology. This product is a
high-performance mobile memory solution that features low power
consumption and high-density, designed for generation premium
mobile devices.

Four 6Gb LPDDR3 products can be stacked up and realize a high
density of maximum 3GB (Gigabytes, 24Gb) solution in a single
package. In consequence, this package reduces the operating
power as well as the standby current by 30% and the height of
the package becomes thin compared to the company's 4Gb-based
one. In addition, it works at ultra low-voltage of 1.2V thus it
satisfies low power consumption which mobile applications
demand.

The product works at 1866Mbps, and with a 32-bit I/O it
processes up to 7.4GB of data per second in a single channel,
and 14.8GB in a dual channel. It can be provided in a form of
'PoP' (Package on Package) to mobile devices.

3GB LPDDR3 products are expected to be noticeably loaded mainly
on to high-end mobile devices from the first half of next year
and will be loaded constantly until 2015.

The company plans to start the mass production of the new
memory at the beginning of next year.

SK hynix defeated market leader Samsung Electronics during the
third quarter of this year in terms of profit margin as SK
hynix hugely benefited from stronger chip prices after a fire
in its plant in Wuxi, China.