Method of producing semiconductor device
A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. A first conductive type impurity is diffused in the silicon carbide substrate. A...

Cross OD FinFET Patterning
A method of forming an integrated circuit structure includes providing a semiconductor substrate; providing a first lithography mask, a second lithography mask, and a third lithography mask;...

TRUE CSP POWER MOSFET BASED ON BOTTOM-SOURCE LDMOS
A semiconductor package may comprise a semiconductor substrate, a MOSFET device having a plurality cells formed on the substrate, and a source region common to all cells disposed on a bottom of the...

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VERTICAL DMOS-FIELD EFFECT TRANSISTOR
A vertical diffused metal oxide semiconductor (DMOS) field-effect transistors (FET), has a cell structure with a substrate; an epitaxial layer or well of the first conductivity type on the...

TRANSISTORS AND METHODS OF MANUFACTURING THE SAME
Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device, includes forming a gate oxide film on an SiC region by a first thermal oxidation treatment in a first oxidizing atmosphere, performing a second...

High Voltage Device with Reduced Leakage
A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a...