Abstract

The conduction type of P dopedZnOthin films using dopant source can be controlled by adjusting the oxygen partial pressure by means of radio-frequency sputtering. Under an optimal oxygen partial pressure of 5%, -type ZnOthin films were obtained with a hole concentration of . Under a growth condition of extremely low oxygen partial pressure, P dopedZnOthin films exhibit -type conduction with a hole concentration of . This research not only achieved significant technical advance in the fabrication of -type ZnO but also gained critical advance in fundamental understanding of the governing mechanism of -type ZnO.

Received 23 December 2005Accepted 16 February 2006Published online 31 March 2006

Acknowledgments:

The authors would like to thank Professor S. F. Yu from Nanyang Technological University of Singapore for PL measurement and discussion. This research was sponsored by National University of Singapore and the Agency for Science, Technology and Research of Singapore (A*STAR).