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We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the V<sub>th</sub> shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn or Cu was not observed. It was found that the addition of Si or Hf element into the IGZO channel layer leads to reducing the hole trap sites formed at or near the gate insulator/IGZO channel interface.