Abstract

The channel layer substitution of a wider bandgapAlGaN for a conventional GaN in high electron mobility transistors(HEMTs) is an effective method of enhancing the breakdown voltage. We demonstrated a remarkable breakdown voltage enhancement in these AlGaN channel HEMTs. The obtained maximum breakdown voltages were 463 and in the HEMT with the gate-drain distances of 3 and , respectively. This result is very promising for the further higher power operation of high-frequency HEMTs.