An extension of the theory for charge emission from monoenergetic grain boundary interface states by thermal emission (TE) and thermionic-field emission (TFE) is presented for states distributed in energy, whose density is either constant or slowly varying with energy as compared to the Fermi function. The importance of TFE increases with the doping concentrationN, and the voltage appli...
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Comparison of the theory, developed in Part I of this paper [1], with transient capacitance experiments leads to the conclusion that the interface state energy distribution in grain boundaries is temperature dependent. This conclusion is based on experimental observations of the emission rate over a wide temperature range. One physical interpretation of this result is that contraction of the silic...
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Elastic stresses are frequently induced in GaAs substrates during the fabrication of FET's, particulariy in the vicinity of windows in dielectric overlayers. It is shown here that these stresses can produce piezoelectric charge densities of such magnitude to appreciably shift the pinchoff voltage and saturation current of FET's. These shifts are of opposite sign for FET's oriented along [011] and ...
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The injection of hot carriers from Si into SiO_{2} in various MOSFET structures is characterized via direct measurements of gate current. A method of mapping gate currents as a function of both gate and drain bias potentials is described. The deterioration of device parameters with hot-electron injection is also characterized, and it is proposed that the rate of aging is a function not only of the...
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A simple analytical model for the MOS device characteristics including the effect of high vertical and horizontal fields on channel carrier velocity is presented. Analytical expressions for the drain current, saturation drain voltage, and transconductance are developed. These expressions are used to examine the effect of scaling the channel length, the gate dielectric thickness, and the bias volta...
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We propose a new extended "end" resistance measurement technique to determine the series source and drain resistance of a field-effect transistor. In this method the small-signal "end" resistance, defined as a derivative of the drain-source voltage, with respect to the gate current, is measured as a function of the drain current. The "end" resistance includes the contributions from the source seri...
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Microwave characterization on 1-µm gate (Al, Ga)As/GaAs modulation-doped field-effect transistors (MODFET's) was done using a network analyzer. Equivalent circuit parameters were computed and compared to those of GaAs MESFET's with an identical geometry. The MODFET's had higher current-gain and power-gain cutoff frequencies (18 and 38 GHz versus 14 and 30GHz) and the circuit parameters g...
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Monte Carlo (MC) simulation and experimental results are used to investigate mark detection technology in electron-beam (e-beam) direct writing for a 10-kV acceleration voltage. The simulation is based on a single scattering and a continuously slowing down approximation model, and also takes into account the Gaussian profile of the e-beam in order to calculate the backscattered electrons from the ...
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The predominant noise is1/fnoise and consists of two parts: a) Noise varying asImin{C}max{2}, generated mostly with conducting channel and predominating for normal values of the collector voltage VCE. b) Noise at low VCEand practically independent of VCE; it is generated chiefly in the space charge region around the base grating and gives coll...
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A new EPROM named SEPROM, based on a modified SEPOX process, is proposed and evaluated. The SEPROM offers a process compatibility to logic LSI's with higher packing density, since the area of the second gate oxide is equal to that of the first gate oxide. To improve the coupling capacitance ratio, which relates to write and read operations, a thin second gate oxide is required for the SEPROM cell ...
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A solid-state optical sensor based on a buried-channel charge-transfer MOS structure and operated at voltages in the above, breakdown regime is proposed. In this mode of operation the MOS photosensor performs as a photon counter with, it is suggested two significant advantages over similar sensors based on p-n junction diodes, namely: self-quenching of the avalanche discharge and possible implemen...
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An expression for the recombination rate in gold-doped silicon is derived taking into account both gold energy levels. This formula shows that the dominant energy level under high-injection conditions is not the midgap gold acceptor, but the gold donor level. The high-low injection lifetime ratio calculated with the derived expression is in good agreement with measured values. This indicates that ...
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The dielectric degradation phenomena in gate oxides of MoSi2/thin n+poly-Si (<100 nm) gate structure which appeared after high-temperature annealing have been analyzed in detail. Analyses included obtaining the correlation between gate oxide dielectric characteristics and various factors like phosphorus concentration in poly-Si, native oxide on poly-Si, sheet resistance of...
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The recombination velocity of polysilicon grain boundaries is calculated from the Shocley-Read-Hall formula, taking into account the balance of charges for nonequilibrium conditions. The calculation is not restricted to grain boundaries in depletion, but applies to the full range of band bending. The results show the existence of significant differences in the nonequilibrium behavior of depletion,...
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In a conventional bipolar transistor the current is limited by diffusion in the neutral base region. In the bulk-barrier transistor the current is determined by diffusion or thermionic emission over a potential barrier. This type of operation occurs in bipolar transistors if the width of the neutral base is below a definite value. The limit between bipolar- and bulk-barrier mode is defined. The cu...
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The small-signal charge transfer inefficiency (SCTI) of a surface-channel CCD has been studied. The experimentally observed behavior of the SCTI could not be explained by the conventional interface state model. Using the McWhorter model for the interface states, which assumes a distribution of the states in the oxide perpendicular to the interface, an excellent agreement between theory and experim...
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A simulator named CASTAM, which includes both process and device models, has been developed to predict MOS process variations through the analysis of variations in electrical characteristics of fabricated MOS devices using the Monte Carlo method. Analysis accuracy using the simulator is examined. Investigation shows that process parameter variations can be estimated with an error of less than 10 p...
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Electromigration in metal conductors used in VLSI circuits raises important concerns especially at submicrometer dimensions. In this paper, we show that the current-carrying capability required in submicrometer MOS technology can be quite severe. We show experimentally that the mean time to fail for Al-Cu conductors increases as the linewidth decreases below about 2 µm and well into the submi...
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The high packing density required for VLSI CMOS circuits leads to enhanced performance of the inherent parasitic bipolar devices, and thus latchup becomes a major problem. One of the most attractive techniques for overcoming this is to fabricate the devices on n-on-n+epitaxial substrate material. This paper deals with latchup suppression by such a technique in fine-dimension CMOS circui...
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A Schottky-barrier diode with self-aligned floating guard ring is described. The device structure requires no additional mask or process step in an advanced bipolar LSI technology featuring polysilicon base contact and self-aligned emitter region [1]. In contrast to conventional guard ring structures, the guard ring is separated from the anode by a sidewall oxide of thickness less than 0.3 µm...
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Dual-collector bipolar transistor structures have been evaluated and found to be sensitive to an applied magnetic field. In particular, the magnetic field results in unequal currents to the two collectors. The output signal is taken as a differential voltage developed across the output load resistors. The mechanism giving rise to the unequal collector currents appears to be emitter-injection modul...
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The charge packet splitting operation employed by charge-domain filters to implement fractional multiplication has been described. Several experiments have been designed to determine the accuracy of this operation. The fabricated circuits investigate the dependence of split accuracy on coefficient value, channel width, barrier shape, barrier location, and the extra (dummy) barriers. A computerized...
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Two methods are described to obtain the value of the series resistance(R)of a Schottky diode from its forward I-V characteristic. The value ofRis then used to plot the curve ln (I) versusV_{D} (= V - IR)which becomes a straight line even if ln(I)versusVdoes not. The ideality factornand the Schottky-barrier heightPhi_...
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The low-temperature dependence of the nonideal base current component has been studied in low-concentration emitter n-p-n Si transistors. Under forward bias, below a certain temperature, ideality factors greater than 2 have been found and hFEroll-off characteristics deviate from a S-R-H recombination model.
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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.