CoolSiC™ MOSFET

Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Silicon Carbide (SiC) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. CoolSiC™ MOSFET first products in 1200 V target photovoltaic inverters, battery charging and energy storage. CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers to harness never before seen levels of efficiency and system flexibility.

Products

Highlights

Enhancing new materials to offer customers extended levels of performance

Silicon Carbide (SiC) opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.

In comparison to traditional silicon (Si) based high voltage (>600V) switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.

All this results in a robust Silicon Carbide MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allowing for system size reduction, power density increases and high lifetime reliability.

Benefits

Highest efficiency for reduced cooling effort

Longer lifetime and higher reliability

Higher frequency operation

Reduction in system cost

Increased power density

Reduced system complexity

Ease of design and implementation

Features

Low device capacitances

Temperature independent switching losses

Intrinsic diode with low reverse recovery charge

Threshold-free on-state characteristics

Product line up

TO-247-4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3pin version, especially at higher currents and higher switching frequencies. Easy1B modules offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections.

Details

SiC MOSFET Gate Driver ICs 1200 V

Ultra-fast switching 1200-V power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.

Please find also

Documents

Boards

Tools & Software

Simulation

Videos

EV charging - General Information

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The Future of EV Charging – Infineon’s One-Stop-Shop, See how Infineon as the market leader and global frontrunner in power electronics, enable you to bring energy-efficient DC EV charger designs to life. With our highly-efficient components and in-depth technical support.

EV charging - Detailed Information

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The Future of EV Charging – Infineon’s One-Stop-Shop, See how we as the market leader and global frontrunner in power electronics, enable you to bring energy-efficient DC EV charger designs to life. With our highly-efficient components and in-depth technical support.

CoolSiC™ - Revolution to rely on

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Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging and manufacturing excellence, Infineon CoolSiC™ enables you to develop radical new product designs with best system cost-performance ratio.

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