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Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that uses ALD (atomic layer deposition) to deposit film between bonded wafers or dice to stop the copper from corroding and diffusing. Benefits include a solution that speeds vapor diffusion and eliminates potential shorting and leakage problems associated with metal passivation layers.

Country

United States

Language

English (United States)

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Disclosed is a method that uses ALD (atomic layer deposition) to deposit film between bonded wafers
or dice to stop the copper from corroding and diffusing. Benefits include a solution
that speeds vapor diffusion and eliminates potential shorting and leakage
problems associated with metal passivation layers.

Background

Currently a problem exists where corroded exposed copper
migrates under the biased thermal stressing after stacking wafers or dice with
copper-copper bonds. Presently there are no known solutions for this problem,
but there are several solutions underway to solve the problem by selectively
depositing passivating metal layers over the copper, or using polymer underfill
materials.

General Description

The following are the steps needed to create the disclosed
method:

1.
Stack the wafers using copper-copper bonds (individual die can
not have a guard ring at the bonding layers).

2.
Cleave the wafers into the die (optional).

3.
Place stacked the wafers
or die into a vacuum chamber.

4.
Pump the first gas into the chamber (e.g. triethylaluminum for
Al2O3).

5.
Evacuate the vacuum chamber.

6.
Pump the second gas into the chamber (e.g. water for Al2O3).

7.
Evacuate the vacuum chamber.

8.
Repeat steps 4 through 7 until the desired thickness of
insulating layer is deposited.
Approximately 50 - 100 angstroms of material should be sufficient to
inhibit copper corrosion and diffusion during BTS (biased thermal stressing).