Abstract

The evaluation of the neutron irradiation induced defects in GaN is studied using a thermally stimulated current (TSC) method with excitation above (below) the energyband gap using ultraviolet (blue, green, red, and infrared) emitting diodes. Annealing at , a broad TSC spectrum for excitation by the ultraviolet light is resolved by five traps, (ionization energy is ), , , , and . Infrared illumination shows a remarkable reduction in TSC for the and traps, indicating the photoquenching behavior. The possible origins of the observed five traps are discussed.