By incorporating two power amplifiers on a single chip -- one for
the 2.4GHz band and another for the 5GHz band -- the HA31010 MMIC
achieves a 4 mm x 4 mm mounting area, approximately 40 percent smaller
than separate 2.4GHz and 5GHz Renesas SiGe MMICs. The device delivers
high gain at the industry's lowest current dissipation level for a
SiGe MMIC. Specifically, it achieves a 28dB power gain in the 2.4GHz
band while consuming only 130mA, and a 24dB power gain in the 5GHz
band while consuming just 160mA.

An on-chip MOSFET-based switching circuit provides on/off control
of the two amplifier circuits, simplifying band switching and
transmit/receive implementation by eliminating the need for an
external switching device. The HA31010 MMIC also incorporates an
output power detector circuit. This feature simplifies the design of
wireless LAN terminals that actively implement low power consumption.
In such designs, the power detector serves as a sensor for the
automatic output-power control function that maintains the minimum
output power necessary for performing communication.

Renesas uses an ultra-fine SiGe-CMOS process to manufacture the
HA31010 chip, which allows a high level of integration. The transistor
pattern and circuit-block layout are optimized to reduce parasitic
capacitances and inductances that would otherwise degrade
high-frequency characteristics. The chip is mounted in a small
surface-mount, 24-pin WQFN0404 (Renesas package code) package that is
totally lead-free. The package employs silver paste material for
optimal die bonding reliability and conductivity, and Sn-Bi
(stannum-bismuth) for package electrode plating.

The HA31010 dual-band power amplifier is the second
high-performance device Renesas has developed for wireless-LANs. The
company entered this market in 2005 with the 5GHz HA31005 SiGe MMIC.
Product development in SiGe technology is ongoing to meet the evolving
needs of customers in global markets.

Readers can find additional product and contact information on the
Renesas Technology Web site at www.renesas.com.

About Renesas Technology Corp.

Renesas Technology Corp. is one of the world's leading
semiconductor system solutions providers for mobile, automotive and
PC/AV (Audio Visual) markets and the world's No.1 supplier of
microcontrollers. It is also a leading provider of LCD Driver ICs,
Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed
Signal ICs, System-on-Chip (SoC), System-in-Package (SiP) and more.
Established in 2003 as a joint venture between Hitachi, Ltd.
(TOKYO:6501) (NYSE:
HIT) and Mitsubishi Electric Corporation
(TOKYO:6503), Renesas Technology achieved consolidated revenue of 906
billion JPY in FY2005 (end of March 2006). Renesas Technology is based
in Tokyo, Japan and has a global network of manufacturing, design and
sales operations in around 20 countries with about 26,200 employees
worldwide. For further information, please visit
http://www.renesas.com.

Note to Editors: A specification summary is included in this
release, and a photo and block diagram of the HA31010 MMIC are
available.

Product names, company names, or brands mentioned are the property
of their respective owners.