Abstract

Amorphous Oxide Semiconductor (AOS) TFTs have exhibited superior performances to conventional silicon-based TFTs. In addition, their fabrication process is potentially comparable to existing amorphous silicon (a-Si) TFT production technology in terms of manufacturing cost and simplicity. They are thereby considered the promising active devices for next-generation display applications.

The AOS TFTs can either have a top-gate or bottom-gate structure. At present, the bottom-gate structure is mainly used for the fabrication of AOS TFTs. Although the bottom-gate structure has a relatively simple fabrication process, the intrinsic disadvantage, like the large parasitic capacitance limits its application in high end products. The top-gate structure, in particular, the self-aligned top-gate structure is preferable for AOS TFTs, however, its implementation in technology is difficult.

This talk is going to address the major issues for fabricating high performances of AOS TFTs, which includes AOS active layer deposition, interface treatment, gate insulator engineering and source/drain doping engineering.

Speaker's Biography

Shengdong Zhang received the B.E. and Master degrees in Electronic Engineering from the Southeast University, China, and the Ph.D. degree in Solid-state Electronics and Microelectronics from Peking University, China. He had worked with the Nanjing Electron Devices Institute (NEDI) till 1999, where he was in charge of development of silicon pressure sensors and a-Si TFTs, and was one of the major contributors to the first a-Si TFT LCD TV prototype in china mainland. From 1996 to 1998 and 2000 to 2002, he worked with Hong Kong University of Science and Technology as a visiting scholar and got involved in the development of high-voltage SOI FETs and poly-Si TFTs. In 2002, He joined the Peking University, China, where he is currently a full professor with the School of Electronics Engineering and Computer Science, and the Acting Dean of School of Electronic and Computer Engineering at Shenzhen Campus. His current research interest includes thin film transistors, active matrix displays, integrated circuits for displays, and nano-technologies.

Prof. Zhang is currently an academic committee member of the National Research Center for Flat Panel Display Technology, and the technical committee member of the National Engineering Lab for AMOLED Technology.

He has co-authored more than 300 research papers in international journals and conferences, and has been authorized 14 US patents and more than 110 Chinese patents so far.

School of Electronics Engineering and Computer Science
Peking University

Shengdong Zhang received the B.E. and Master degrees in Electronic Engineering from the Southeast University, China, and the Ph.D. degree in Solid-state Electronics and Microelectronics from Peking University, China. He had worked with the Nanjing Electron Devices Institute (NEDI) till 1999, where he was in charge of development of silicon pressure sensors and a-Si TFTs, and was one of the major contributors to the first a-Si TFT LCD TV prototype in china mainland. From 1996 to 1998 and 2000 to 2002, he worked with Hong Kong University of Science and Technology as a visiting scholar and got involved in the development of high-voltage SOI FETs and poly-Si TFTs. In 2002, He joined the Peking University, China, where he is currently a full professor with the School of Electronics Engineering and Computer Science, and the Acting Dean of School of Electronic and Computer Engineering at Shenzhen Campus. His current research interest includes thin film transistors, active matrix displays, integrated circuits for displays, and nano-technologies.

Prof. Zhang is currently an academic committee member of the National Research Center for Flat Panel Display Technology, and the technical committee member of the National Engineering Lab for AMOLED Technology.

He has co-authored more than 300 research papers in international journals and conferences, and has been authorized 14 US patents and more than 110 Chinese patents so far.