Abstract of the Disclosure

The invention describes an integrated circuit combining semiconductor circuit elements having active regions of the same or opposite type conductivity separated by a semiconductive region over which extends an interconnection on an insulating layer, wherein a highly doped surface region is provided underneath the interconnection to reduce unwanted field-induced leakage currents. In a preferred, the circuit elements are complementary IGFETs. In another embodiment, one of the IGFETs is built into an island surrounded by a thin heavily doped liner

Figure descriptions: cover graphic

Figure 1 is a cross-sectional view taken along the line I-I of Figure 2.

Figure 2 is a plan view.

Figures 1 and 2 show a completed device comprising a p-type body (1), epitaxially deposited n-type material (2), the extent of which is shown in Figure 2 by the chain-dot line (3), an n+ diffused layer (4), p-type diffused regions (5), n-type diffused regions (6) and an oxide layer (7).