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Abstract

This study presents the synthesis of copper indium gallium (di)selenide (CIGS) films by a solvothermal method. Four factors in CIGS synthesis are considered: In/Ga ratios, hydrogen contents during thermal annealing, thermal annealing temperatures, and annealing times. Experimental results show that the optimal parameters for CIGS film synthesis are the following: proportion of Cu:In:Ga:Se = 1:0.7:0.3:2; hydrogen content during thermal annealing, 5%; thermal annealing temperature, 600 °C; and annealing time, 100 min. The largest crystal grain size of a CIGS film synthesized using these optimal parameters is about 100 nm. The crystal grain size is also found to be inversely proportional to sheet resistance. This relationship holds true because a smaller crystal indicates more grain boundaries and defects. Thus, an electron encounters more barriers in the transmission process, and electric conductivity decreases.