amorphous and polycrystalline thin film silicon science and technology 2009

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This book presents new concepts for a next generation of PV. Among these concepts are: Multijunction solar cells, multiple excitation solar cells (or how to take benefit of high energy photons for the creation of more than one electron hole-pair), intermediate band solar cells (or how to take advantage of below band-gap energy photons) and related technologies (for quantum dots, nitrides, thin films), advanced light management approaches (plasmonics). Written by world-class experts in next generation photovoltaics this book is an essential reference guide accessible to both beginners and experts working with solar cell technology. The book deeply analyzes the current state-of-the-art of the new photovoltaic approaches and outlines the implementation paths of these advanced devices. Topics addressed range from the fundamentals to the description of state-of-the-art of the new types of solar cells.

This handbook is a compendium giving a comprehensive description of the basics of semiconductor physics relevant to the design and analysis of thin film solar cell materials. It starts from the basics of material science, describing the material and its growth, defect and electrical properties, the basics of its interaction with photons and the involved statistics, proceeding to space charge effects in semiconductors and pn-junctions. Most attention is given to analyze homo- and hetero-junction solar cells using various models and applying the field-of-direction analysis for discussing current voltage characteristics, and helping to discover the involvement of high-field effects in solar cells. The comprehensive coverage of the main topics of - and relating to - solar cells with extensive reference to literature helps scientists and engineers at all levels to reach a better understanding and improvement of solar cell properties and their production. The author is one of the founders of thin film solar cell research.

This book constitutes the refereed proceedings of the Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, held in Costa de Caparica, Portugal, in February 2012. The 65 revised full papers were carefully reviewed and selected from numerous submissions. They cover a wide spectrum of topics ranging from collaborative enterprise networks to microelectronics. The papers are organized in topical sections on collaborative systems, service orientation, knowledge and content management, human interaction, Petri nets, smart systems, robotic systems, perceptional systems, signal processing, energy, renewable energy, energy smart grid, power electronics, electronics, optimization in electronics, telecommunications and electronics, and electronic materials. The book also includes papers from the Workshop on Data Anaylsis and Modeling Retina in Health and Disease.

Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) – structure, physics and brief history Paper electronics – Paper transistors, paper memories and paper batteries Applications of oxide TFTs – transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors

Applications requiring large-area semiconductor coverage rely increasingly on amorphous and heterogeneous silicon materials because they can be deposited at low cost on a variety of substrates. This volume covers the range from fundamental research to the device applications of these materials. A special session on medium-range order is featured, and confirms the belief that ordering correlates with the electronic quality of a-Si:H films. Important experimental observations on metastable effects in a-Si:H are also reported, as are devices and processing strategies. Topics include: growth and properties; high-rate deposition; recrystallization, amorphization and porous silicon; ordering and hydrogen; metastability; defects, band tails and transport; heterogeneous materials and devices; thin-film transistors and displays; solar cells; and detectors, imagers and other devices.

This issue of ECS Transactions includes 33 papers that were presented at the Second International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT II), held in the Xi¿an Garden Hotel, Xian, China, July 5-10, 2009. This symposium was sponsored by the Engineering Conferences International.

Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.

This issue of ECS Transactions includes papers presented at the 2009 EuroCVD-17 and CVD 17 symposium. Topical areas covered include fundamentals of chemical vapor deposition (CVD), chemistry of precursors for CVD, synthesis of nanomaterials by CVD and related methods, industrial applications of CVD, and novel CVD reactors and processes. This issue is sold as a two-part set and also includes a CD-ROM of the entire issue.