Statistics

Fabrication and charaterization of InP-based high election mobility transistors

View/Open

Author

Liu, Yuwei

Date of Issue

2009

School

School of Electrical and Electronic Engineering

Abstract

InP-based high electron mobility transistor (HEMT) is an important device in high frequency and low noise applications. In current work, studies on InP-based InGaAs single channel HEMT and InGaAs/InP composite channel HEMT were carried out. Some important issues such as the thermal stability of InGaAs/InP composite channel HEMT, surface passivation effect on InGaAs/InP composite channel HEMT, high-frequency noise of InP HEMT, and suppress of thermal noise in InGaAs/InP composite channel HEMT were investigated. They are summarized as following: