2Proffesor at Department of Electrical Engineering, Amir Kabir University of Technology, Tehran, Iran

Abstract

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum galliumnitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band(12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAEof 43% and linear gain of 22.9 dB was reached.THE use of solid state power amplifiers (SSPAs) in manyradio communication systems, such as Ku band satellitecommunication systems, mobile cellular phone systems,etc, has increased significantly in recently years. The SSPAshigher reliability, smaller size, and enhanced performancehave resulted in an increased popularity over its travelingwave tube amplifier (TWTA) counterparts