SAN JOSE, Calif.--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., a world leader in advanced semiconductor
technology, today announced a successful network processor tape-out
based on Samsung’s 14LPP (Low-Power Plus) process technology in close
collaboration with eSilicon and Rambus. This achievement is built on
Samsung’s cutting-edge foundry process and design infra for network
applications, eSilicon’s complex ASIC and 2.5D design capability with
its IP solutions, and Rambus’ high-speed 28G SerDes solution.

Samsung’s 14LPP process technology based on 3D FinFET structure has
already been proven for its high performance and manufacturability
through mass production track record. The next generation process for
network application is 10LPP process which is based on 10LPE (Low-Power
Early) of which mass production was started from last year for the first
time in the industry. 10LPP process’ mass production will be started in
this year end.

Additionally, Samsung named its newly developed full 2.5D turnkey
solution, which connects a logic chip and HBM2 memory with an
interposer, as I-CubeTM (Interposer-Cube) solution. This
14LPP network process chip is the first product that Samsung applied
I-CubeTM solution together with Samsung’s HBM2 memory. The
I-CubeTM solution will be essential to network applications
for high-speed signaling, and it is expected to be adopted into other
applications such as computing, server and AI in the near future.

“This successful 14nm network processor tape-out was combined with
eSilicon’s proven design ability in network area and Rambus’ expertise
in SerDes and Samsung’s robust process technology along with I-Cube
solution,” said Ryan Lee, Vice President of Foundry Marketing Team at
Samsung Electronics. “Our collaboration model will have a great
influence on a network foundry segment and Samsung will keep developing
its network foundry solution to be a meaningful total network solution
provider aligned with its process roadmap from 14nm and 10nm to 7nm.”

“This project was a true collaboration between Samsung, Rambus and
eSilicon. eSilicon is proud to bring its FinFET ASIC and interposer
design skills along with our substantial 2.5D integration skills to the
project,” said Patrick Soheili, Vice President of Product Management and
corporate development at eSilicon. “Our HBM Gen2 PHY, custom flip-chip
package design and custom memory designs also helped to optimize the
power, performance and area for the project.”

“Networking OEMs are looking for high-quality leadership IP suppliers
that can bring 28G backplane SerDes in advanced FinFET process nodes to
market,” said Luc Seraphin, senior vice president and general manager of
Rambus Memory and Interfaces Division. “Our success with Samsung and
eSilicon is a testament that these industry-leading solutions are
attainable when you bring leading companies together. This is the first
of several other offerings we plan to bring to networking and enterprise
ASIC markets around the globe.”

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. inspires the world and shapes the future
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the worlds of TVs, smartphones, wearable devices, tablets, cameras,
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