Dependence of negative bias temperature instability (NBTI) on the frequency of the pulsed stress applied on p-channel transistors with plasma nitrided SiON gate dielectrics is studied. The threshold voltage shift (Î”Vth) decrease is observed with increase in frequency. The fractional relaxation is found to be more remarkable after a pulse stress with higher frequency. A phenomenological model based on the dispersive transport of hydrogen in the gate dielectrics is proposed to explain the pulse based NBTI characteristics. The frequency dependence of NBTI is attributed to the existence of deep level hydrogen traps in the gate dielectrics. The model predicts reduced frequency dependence in the ultrahigh frequency range. The results and discussion also confirm the overall correctness of the dispersive transport framework in interpreting the NBTI mechanisms.

We have used scanning nonlinear dielectric microscopy to clarify the position of electrons and holes in the gate SiO2â€“Si3N4â€“SiO2 (ONO) film of a metalâ€“ONOâ€“semiconductor flash memory. The electrons were detected in the Si3N4 part of the ONO film, while the holes were...

The optical and structural properties of H or He implanted ZnO were investigated using low temperature photoluminescence (PL) and infrared spectroscopy (IR). H implantation is shown to influence the relative luminescence intensities of the donor bound excitons, enhancing the 3.361 eV peak, and...

The behavior of the semiconductor dielectric susceptibility under the action of a strong laser pulse in the range of the luminescent M band and two-photon probe of a biexciton level is investigated. It is shown that the pronounced Autlerâ€“Towns effect occurs at the two-photon transition....

The energy and damping of the quasi-stationary state corresponding to a hyperbolic exciton in a semiconductor crystal are calculated. It was assumed that the screened Coulomb potential describes the interaction between the electron and hole. The resonance conditions due to the hyperbolic exciton...

Fast electron trapping in high-k gate dielectrics is shown to effectively increase the magnitude of the threshold voltage during the dc measurements of the drain current, which leads to underestimation of the intrinsic channel carrier mobility. An approach based on the pulse Id-Vg technique is...

To provide the observation of the metastable dielectric electron-hole liquid (DEHL) we suggest to achieve the high-enough total density of non-equilibrium pairs in the excited volume, which exceeds the density of DEHL, by pulse photoexcitation of the doped semiconductor. Doping decreases the...

In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the corresponding Weibull slopes, Î², of the MOS...