Formation of chalcogenide glass p-n junctions

AUTHOR(S)

Tohge, Noboru; Kanda, Kimio; Minami, Tsutomu

PUB. DATE

June 1986

SOURCE

Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1739

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

Rectifying p-n junctions have been formed between n-type Ge20Bi11Se69 bulk glass and p-type chalcogenide films such as Ge20Se80 and As2Se3. The forward current in the power law increased with increasing bias voltage, suggesting that it was space charge limited. The spectral response of the short circuit currents showed a maximum and a shoulder at photon energies which corresponded to the optical band gaps of the p-type films and the n-type glass, respectively. This finding is indicative of the bending of the energy bands in both the p-type films and the n-type glass in the vicinity of the p-type film/n-type glass interface.

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Shallow and ultrashallow p-n junctions were formed in Si by stimulated diffusion of P from phosphosilicate glass and B from borosilicate glass under pulsed photon annealing. Electrical, photoelectric, and optical properties of these junctions were investigated. Special features of stimulated...

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The carrier profile for InAs films grown on GaP is modeled as a first-order approximation which assumes that 90Â° edge dislocation intersections and the threading dislocation intersections act as shallow donors. Due to dislocation annihilation during growth, the threading dislocation...

Forward current-voltage characteristics of nonideal Ti/4 H-SiC Schottky contacts with an ideality factor n = 1.1â€“1.2 in the exponential portion of the characteristics have been analyzed. The nonideality was considered to be a result of the formation of a thin dielectric layer between the...