Ferroelectric thick films of Bi3NbTiO9 (BNT) with Aurivillius type structure were
fabricated using the airflow deposition method at room temperature. The precursor powder for
deposition was prepared by a conventional mixed oxide route. The BNT films obtained from airflow
deposition had thickness between 25 and 90 μm. Subsequent sintering showed that the films were
sinterable at lower temperatures than bulk samples prepared from the same powder using isostatic
cold pressing technique. Thick films sintered at 900 0C displayed higher density and a higher
electrical breakdown field compared with bulk samples. SEM microscopy showed similar grain size
for the thick films sintered at 900 0C and corresponding bulk samples sintered at 1150 0C. A
pronounced preferential grain orientation of 70% along the c-axis was observed for thick films with
thickness of 252m sintered at 9000C. While the grain orientation in bulk samples was random the
grains in the thick films were aligned along the substrate plane. This significant microstructural
difference between thick film and bulk samples is believed to be associated with directional nature of
the deposition process. The novel method allowed anisotropic film formation without applying
pressure during sintering. Low sintering temperature allows reduction in bismuth losses and better
grain growth control, which also contributes to the advantages of the method.