Abstract

Electron transport properties in an armchair graphene nanoribbon are theoretically
investigated by considering the presence of line defect. It is found that the line
defect causes the abundant Fano effects and bound state in continuum (BIC) in the
electron transport process, which are tightly dependent on the width of the nanoribbon.
By plotting the spectra of the density of electron states of the line defect, we see
that the line defect induces some localized quantum states around the Dirac point
and that the different localizations of these states lead to these two kinds of transport
results. Next, the Fano effect and BIC phenomenon are detailedly described via the
analysis about the influence of the structure parameters. According to the numerical
results, we propose such a structure to be a promising candidate for graphene nanoswitch.