Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates

Abstract

Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 µm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C and the 6H-SiC epilayers, grown under the same process parameters, deteriorates when lowering the off-orientation of the substrate.