In the present invention, memory chips are stuck together in stacked fashion by TAB (tape automated bonding), and a multiple memory chip and lead complex like an SOP (small out-line package) is formed of the chips and leads, whereby a memory module of high packaging density can be realized by a flat ...

There are disclosed a semiconductor integrated circuit device, a semiconductor integrated circuit wiring method and a cell arranging method, which can reduce delay in a semiconductor integrated circuit and improve noise resistibility., achieve facility of wiring design, and reduce production cost.

A MOS-type semiconductor integrated circuit device is provided in which MOS transistors are formed in a vertical configuration. The MOS transistors are constituted by pillar layers formed on the substrate. The outer circumferential surfaces of the pillar layers are utilized to form the gates of the ...

A semiconductor integrated circuit device with the SOI structure is provided, which decreases the chip area of wiring lines interconnecting p- and n-channel IGFETs, raising their integration level. This device is comprised of a semiconductor layer formed on an insulating substrate. The semiconductor ...

A semiconductor integrated circuit device has a plurality of basic cells. The basic cells are placed in a matrix form, and are formed on a semiconductor substrate. Each of the basic cells includes a wire selection portion and a logic gate portion. The logic gate portion has a MOS transistor. The wir ...

The semiconductor integrated circuit enjoys a high performance and can be produced at a low production cost and within a short time. A cell has an internal circuit connection such that an output terminal is connected to a plurality of input terminals through source-drain paths of active devices conn ...

Herein disclosed is a semiconductor integrated circuit device comprising a SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs. The gate electrodes of the drive MISFETs and the gate electrodes of the transfer MISFETs of the memory cell, and ...

In a semiconductor integrated circuit wherein an interlayer insulating film is formed over a semiconductor substrate having a semiconductor device formed thereover; and an interconnection embedded in an interconnection groove in the interlayer insulating film is formed by the deposition of a metal f ...

A wiring pattern is divided into sets of long wiring (L1) and sets of short wiring (Ls) by comparison to a reference value. Layout rules of the sets of long wiring (L1) are made different from layout rules of the sets of short wiring (Ls) by using an effect of a Levenson type phase shift. Thereby, a ...

In a semiconductor integrated circuit device and a method of designing the same, design information about circuit cells each having a desired function are described as objects according to selected purposes. The pieces of design information are registered in a cell library as cell information capabl ...