Abstract

The functionalization of graphene oxide (GO) sheets with polyimide (PI) enables the layer-by-layer fabrication of a GO-PI hybrid resistive-switch device and leads to high reproducibility of the memory effect. The current-voltage curves for the as-fabricated device exhibit multilevel resistive-switchproperties under various reset voltages. The capacitance-voltage characteristics for a capacitor based on GO-PI nanocomposite indicate that the electrical switching may originate from the charge trapping in GO sheets. The high device-to-device uniformity and unique memory properties of the device make it an attractive candidate for applications in next-generation high-density nonvolatile flash memories.

Received 24 June 2011Accepted 10 July 2011Published online 29 July 2011

Acknowledgments:

This work was supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (20103514120009) and Scientific Research Project for Universities funded by Fujian Education Department (JK2010005).