Gallium-diffused waveguides in sapphire

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Description/Abstract

The fabrication and characterisation of gallium-diffused planar waveguides in sapphire is reported. Waveguides were fabricated by diffusion of 60nm - 200nm thick films of gallium oxide into c-cut sapphire at 1600°C for times ranging between 6 and 16 hours. Near-field intensity profiles of the guided modes were measured at wavelengths between 488nm and 850nm, and the surface index elevation was estimated to be up to (0.6±0.02)x10?2. Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.