Samsung Plans 3nm Gate-All-Around FETs in 2021

According to the company’s latest processor technology roadmap, Samsung aims to mass produce gate-all-around (GAA) transistors (the architectural successor to FinFETS) at the 3nm node in just three years. They will be preceded by 7nm Low Power Plus based on EUV lithography this year, followed by 5nm FinFET production in 2019 and 4nm FinFET production in 2020.

GAA technology has been under development since the early 2000s by Samsung and other firms. GAA transistors are field-effect transistors (FET) that feature a gate on all four sides of the channel to overcome the physical scaling and performance limitations of FinFETs, including supply voltage.