The Raman scattering from In1-x-yGaxAly As/InP lattice matched quaternary alloys is studied. The alloys are grown on (100) oriented InP substrates by molecular beam epitaxy. The composition and intensity dependence of optical phonon mode frequencies show that the alloys exhibit three-mode behavior including InAs-like, GaAs-like and AlAs-like modes. The LO phonon modes are Raman active in the depolarized configuration and Raman inactive in the polarized configuration. TO phonon modes are also observed due to disorder effect, resulting in the asymmetrical shapes of the Raman peaks of phonons.

The Raman scattering from In1-x-yGaxAly As/InP lattice matched quaternary alloys is studied. The alloys are grown on (100) oriented InP substrates by molecular beam epitaxy. The composition and intensity dependence of optical phonon mode frequencies show that the alloys exhibit three-mode behavior including InAs-like, GaAs-like and AlAs-like modes. The LO phonon modes are Raman active in the depolarized configuration and Raman inactive in the polarized configuration. TO phonon modes are also observed due to disorder effect, resulting in the asymmetrical shapes of the Raman peaks of phonons.