Abstract

The low-frequency noise of triple-gate fin field-effect transistors (finFETs) fabricated on silicon-on-insulator (SOI) substrates, with or HfSiON gate stacks has been studied. In most cases, noise has been observed with for low frequencies . It is shown that this type of noise can be ascribed to number fluctuations and scales with the effective device area. Based on a simple tunneling model, the noise spectral density has been converted to an oxide trap density profile, exhibiting a decay in for larger distances from the interface. This stands in contrast with planar bulk devices with a similar high- gate stack and seems to be typical for the fin processing used, irrespective of further process details, like the use of selective epitaxialgrowth, strained SOI or strain-inducing cap layers.