Abstract:

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The characteristics of Ni, Monel (Ni-Cu alloy, Ni55mol%-Cu45mol%), Monel/Si,
Ni/Ti/Ni and Mo electrodes were studied for ohmic contact to C-face N-type 4H-SiC. Low contact
resistivity (ρC) was not compatible with reduction of graphite precipitation in the case of Ni, Monel,
Ni/Ti/Ni, and Mo electrodes. Monel/Si achieved less graphite precipitation and low ρC, which is
enough to apply for actual rectifier, because a Monel/Si electrode forms a silicide without reaction
between the deposits and the substrate.

Abstract: 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold voltage Vth was designed to be 3.0 V by TCAD simulation, and was 3.6 – 3.8 V at the fabricated devices. On / off ratio was approximately 105.