Graphene samples were prepared on various substrates via mechanical
exfoliation. The samples were then annealed in vacuum at
temperatures from
200 \r{ }C to 1000 \r{ }C. AFM images showed that folds were
generated on
graphene's surface above a critical temperature after annealing.
The top of
folds were enveloped by wave-like structure. The mechanism for
the fold
formation is believed to be due to differences in thermal
expansion between
the graphene and the substrate. We will discuss the dependence of
fold
formation on annealing temperature, graphene-substrate
interaction, graphene
thickness, and presence of graphene defects. We believe these
results are
relevant to the understanding of similar fold formation in both
CVD and SiC
epitaxial growth of graphene.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2010.MAR.H22.15