Tag - low temperature GaAs

The Fermi level of annealed low-temperature GaAs on Si-δ-doped GaAs grown by molecular beam epitaxy
Photoreflectance has been used to study the Fermi level of annealed low-temperature GaAs in sample structures composed of low-temperature GaAs on top of Si-δ-doped GaAs. The diffusion of As precipitates across the interface between low-temperature GaAs and normal GaAs is observed by cross-sectional imaging via transmission electron [...]

Fundamental issues of device-relevant low temperature GaAs and related materials properties
In the past few years, a flurry of activity has been devoted to the studies and device applications of non-stoichiometric GaAs grown by molecular beam epitaxy at the extremely low temperature (LT) of 250 °C or below using, in [...]

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The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.

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The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.