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2016 National Nanotechnology Initiative Strategic Plan

This document is the strategic plan for the NNI. It describes the NNI vision and goals and the strategies by which these goals are to be achieved. The plan includes a description of the NNI investment strategy and the program component areas called for by the 21st Century Research and Development Act of 2003, and it also identifies specific objectives toward collectively achieving the NNI vision. This plan updates and replaces the NNI Strategic Plan of February 2014.

The purpose of this experiment is to conduct synthesis of silver nanoplates and explore their shape stability that affects optical property (referred to as localized surface plasmon resonance (LSPR). Students will learn about the differences in physical properties and behavior at the nanoscale as compared to the same materials at the macroscale. This lesson assists students in working with scale and unit conversion Silver nanoparticles can take the shape of cubes, spheres, bars,...

This course is intended to introduce the students to concepts of theoretical chemistry and molecular modeling.
A practical approach will be used guiding the student from the fundamental theoretical background to the practical aspects of the models: definition, analysis and interpretation.
The topics discussed in each section are reinforced with varied exercises, references, and further readings.

The contents of the course is structured as follows:

Introduction.
The molecular Hamiltonian and the solution of the Schroedinger equation.a.- The Hartree-Fock (HF) approximation. Differential equation.b.- The Roothaan-Hall equations. The algebraic equation.
The Born-Oppenheimer approximation. Geometry Optimization.
Molecular energy and the potential energy surface.
Analysis of the WFN: Molecular properties.
Molecular geometry. The concept of molecular structure.

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part …

In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid state physicists, chemists, numerical analysts, and software professionals. And yet, as you will see in part 1 of this course (first 5 weeks), that the basics of current flow though solid state …

In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid state physicists, chemists, numerical analysts, and software professionals. And yet, as you will see in part 1 of this course (first 5 weeks), that the basics of current flow though solid state …

The modern solar cell was invented at Bell Labs in 1954 and is
currently receiving renewed attention as a potential contribution to
addressing the world\‘s energy challenge. This set of five tutorials
is an introduction to solar cell technology fundamentals. It begins
with a broad overview of solar cells and continues with a discussion
of carrier generation and recombination in silicon solar cells. The
tutorials continue with an overview of solar cell modeling and …

The Effect of Doping on Semiconductors

In this simulation, users can select the temperature and the concentration of dopant, both donors and acceptors, that can be added to silicon. Two diagrams are generated. One is a schematic of an energy band diagram that shows the Fermi energy as well as a representation of the concentrations of electrons and holes in the material using red and blue circles. The other shows the concentrations of electrons and holes as a function of temperature as a line plot, in a classic Arrhenius plot representation. The intrinsic carrier concentration and Fermi energy are also shown, for reference.