Kingston has announced several new solid state drives that will be a part of its HyperX lineup, as the Savage SSD series.

To be available in 120, 240, 480 and 960GB capacities, the new Kingston HyperX Savage SSD series is based on a quad-core, eight-channel Phison S10 controller paired up with Toshiba's 19nm MLC NAND. The new HyperX Savage SSD series will be the fastest SATA-based SSD series in Kingston's HyperX lineup and will replace the HyperX 3K SSD lineup.

With the quad-channel Phison S10 controller, the HyperX Savage SSD series will offer sequential transfer speeds of up to 560MB/s for read and up to 530MB/s for write while random 4K performance is set at up to 100,000 IOPS for read and up to 89,000 IOPS for write.

The HyperX Savage is based on SATA 6Gbps interface and a standard 2.5-inch 7mm form-factor. Like other Kingston SSDs, the HyperX Savage will also be available as a stand-alone SSD or with an upgrade bundle kit that includes a 2.5-inch USB 3.0 enclosure, 3.5-inch bracket and mounting screws, SATA cable, hard drive cloning software, screwdriver and a 7mm to 9.5mm adapter.

While Kingston did not reveal any details regarding precise availabilty date or the price a quick check shows it listed for pre-order in retail/e-tail with a price set at €85 for the 128GB model, 135€ for the 240GB one, 265€ for 480GB and 660€ for the 960GB model.

OCZ is working on yet another member of the Vector SSD lineup, the Vector 180. Techpowerup managed to spot it at the Computex 2014 floor and score some pictures of the PCB as well as some details regarding the expected performance of the new SSD.

The upcoming Vector 180 will be a high-end 2.5-inch consumer SSD based on OCZ-Indilinx Barefoot 3 M00 series controller which will be paired up with Toshiba's 19nm MLC NAND. According to OCZ, the new Vector 180 will pack quite a few features which will also make it suitable for entry-enterprise markets as well.

The first PCB pictures of the OCZ Vector 180 show LPDDR3 cache as well as a power-outage mitigating logic part which will finish all current read and write operations if it senses a power outage or unstable power, which should prevent data loss.

According to first informations, the upcoming Vector 180 SSD will be available in capacities of up to 960GB and offer sequential transfer speeds of up to 550MB/s with 4K random performance will be at up to 100,000 IOPS.

Hopefully, the OCZ Vector 180 official release is not far away and we will hear more about it soon.

OCZ has announced the new Deneva 2 series of enterprise SSDs that will now include 2.5-inch, 6Gbps SATA III models that feature 19nm NAND Multi-Level Cell (MLC) flash paired up with LSI's Sandforce SF-2281 controller, as well as an improved power architecture that will bring the superior storage performance, endurance, reliability as well as excellent total cost of ownership, something that is quite important in the enterprise industry.

In addition to the new 19nm NAND flash process geometry, the new Deneva 2 series will also feature a new power architecture designed from the ground up in order to optimize server back plane functionality. Based on the popular LSI Sandforce SF-2281 controller now paired up with 19nm toggle mode NAND MLC flash chips, the new Deneva 2 SSDs will offer read and write performance of up to 550MB/s and 520MB/s with random 4K read and write performance of up to 45K and 34K IOPS.

Daryl Lang, SVP of Product Management at OCZ technology noted that Deneva 2 SSD series has already been popular among IT professionals for enterprise applications as OnLine Transaction Processing, database warehousing, read intensive data caching and server boot-ups and that latest NAND flash process will deliver optimal balance of I/O performance and cost-efficiency for customers.

To be available in 120, 240 and 480GB capacities the new Deneva 2 series will also feature data fail recovery, intelligent block management, wear leveling and robust error correction as well as lower power consumption.

Back in April 2011, Toshiba and SanDisk jointly announced that they were the first to achieve a silicon fabrication breakthrough on the 19nm process node. The good news was that smaller, cheaper and higher capacity NAND flash could be stored in 2-bit-per-cell (MLC) transistors when 16 die are stacked into a single-chip package.

Rewind further back to 2008, and many analysts remember that SanDisk's former Chairman, Founder and CEO Eli Harari had questioned the industry's ability to scale below the 20nm process node. The company cited "uncertainties with Extreme Ultraviolet (EUV) lithography at such small scales, a process that had been hit with delays, lack of power sources and cost issues at the time.

Toshiba had started sampling its 19nm NAND flash shipments in April 2011 and hit volume production between July and September 2011. At the time, however, it was only sampling 2-bit-per-cell (MLC) products and had only intended to commercialize 3-bit-per-cell (TLC) later on.

In January 2012, Toshiba finally began manufacturing 19nm NAND flash on 3-bit-per-cell (TLC) 128Gb chips with the world's smallest die size at just 170mm2. The company has also been able to achieve the world's fastest write speeds on any 3-bit-per-cell (TLC) device at 18MB/s.

AnandTech recently published a comprehensive and informative overview of Triple-Layer Cell (TLC) NAND flash and its place in the consumer electronics industry which can be found here. Of course, the new TLC die shrink technology introduces a myriad of problems for voltage regulation, write amplification and ECC that all must be taken into consideration when manufacturing NAND flash at this small of a scale. Nevertheless, Toshiba claims it has optimized the peripheral circuit structure of the chips and uses air-gap technology for transistors, effectively reducing coupling between memory cells down to 5-percent.

We look forward to the first products from partnering vendors and expect them to be announced soon.