Low-temperature excitation and photoluminescence spectra are described for single GaAs/Al0.37Ga0.63As quantum wells grown by molecular beam epitaxy with and without a 2-min interruption of growth at the heterointerfaces. The spectra from samples grown with interruption include well-resolved...

A photoluminescence emission band at 830 nm has been detected in single heterojunction quantum well structures (modulation-doped structures) in the range of 250â€“400 K. This emission band is observed neither in heterojunction structures without a two-dimensional electron gas (2DEG), nor in...

Ultrathin InGaAs/InP single quantum well structures, grown by chloride transport vapor levitation epitaxy, have been investigated by low-temperature photoluminescence (PL). Well-resolved multiple peaks are observed in the PL spectra, instead of an expected single peak. We attribute this to...

Recombination of quasi-two-dimensional (2D) free-electron-hole pairs in PbTe/(Pb,Eu)Te multiple quantum wells has been studied in time-resolved photoluminescence experiments in the 4â€“5 Î¼m region on subnanosecond scale by an infrared upconversion method. Over a finite temperature range,...

Techniques of low-temperature photoluminescence (PL), photoluminescence excitation, and photoreflectance were used to study the effect of hydrogen plasma treatment at 260ï¿½C on antimodulation Si-doped GaAs/AlGaAs heterostructures with near-surface single quantum wells (QWs) grown by...

Single CdTe/CdMgTe quantum well (QW) structures are investigated by stationary and time-resolved photoluminescence in the presence of an applied magnetic field. We study the dependence of the electron and the hole g factors on the well width by combining Zeeman measurements and the recently...

We present direct measurements of interwell carrier transport in InGaAsP quantum well (QW) laser structures performed by time-resolved photoluminescence. Conditions of originally empty and filled wells are explored. In both cases, the time for the hole transport across the structure is found to...