Abstract

We demonstrate the emission at room temperature from a metamorphic quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual substrate. Careful growth optimization ensured good optical and structural qualities. For a broad area laser, a minimum threshold current density of was achieved under pulsed operation. This result indicates that metamorphic InGaAsquantum wells can be an alternative approach for GaAs-based lasers.