Choice of parameter values for the simulation is not obvious. It is also difficult to
correlate the parameters of such a simple model with real-word parameters. In a real
etching process the important factors are temperature, pH, and time. In a computer
simulation the parameters are the unit cell etching probabilities and the total number
of simulation steps.

Etching time

Corresponds to the total simulation time, or the number of simulation steps.

Ph

This is the proton concentration, so this should show how often a particular
unit cell is visited. pH thus also correlates with the simulation time, or steps
per frame. Obviously, if you want, say 10 frames, the total simulation time also changes.
Unfortunately pH also changes the relative etching probabilities of the various unit
cell configurations. This correlation is not known and is one of the main subjects
of the simulation study.

Temperature

This parameter is expected to influence all etching probabilities.

The sum of all configuration probabilities also
changes the total etching rate, i.e., the number of unit cells removed after a fixed number
of tries. This total also changes during the etching process itself, not only due to
the surface morphology changes (more or fewer kink sites, for example) but also
due to the finite size of the simulation world.

The etching probabilities are shown later in the form of a list, for example,
p(0)=0, p(1)=0.01, p(2)=1, p(3)=1, p(4)=1. This would mean that the probability
of removing a completely surrounded unit cell is zero, p(0)=0. The probability
of removing a unit cell from a straight step edge is low, p(1)=1. All other
probabilities are equal to 1, meaning that all kink sites and isolated
unit cells are always removed, whenever the Monte Carlo simulation touches
them.