A low-temperature growth technique for GaN single crystal films has been developed utilizing electron cyclotron resonance (ECR) plasma excitation. The GaN film has been grown in a low pressure metalorganic vapor phase epitaxy (MOVPE) system using the reaction of trimethylgallium with highly activated nitrogen extracted from the ECR plasma chamber. Growth conditions of GaN single crystal films have been clarified by examining reflection high-energy electron diffraction patterns. The surface morphology of the GaN single crystal film is very smooth and electrical properties are comparable to those of a MOVPE technique at high growth temperatures.

It is shown that GaN layers can be grown on (100)- and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed n-type conductivity with...

A comparative study of electron cyclotron resonance (ECR) and radio frequency (rf) plasma as a nitrogen source for molecular-beam epitaxy GaN was carried out. The effects of differences in the excited nitrogen species on the optical signals during GaN growth were investigated by 77 K...

Focuses on a study which measured electron-cyclotron-resonance (ECR) and reactive ion etching (RIE) rates for gallium nitride and related compounds using the same reactor and plasma parameters in metal organic group compounds. Comparison between RIE and ECR etching of plasmas; Methodology of...

A local structural transition in heavily Fe-doped GaN films related to the magnetic properties has been revealed by fluorescence x-ray absorption fine structure (XAFS) analysis. The structural transition is explained (or considered to be induced) by the change in the degree of hybridization...