Plasma-Enhanced Atomic Layer Deposition

​ALD is a surface controlled layer-by-layer process for the deposition of thin films with atomic layer precision. PEALD is a further advancement on ALD. It enables improved film properties at lower temperatures.

WHAT HAPPENS DURING PEALD?

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PEALD uses specific chemical precursors just like in thermal ALD. However, it also makes use of cycling an RF-plasma to create the necessary chemical reactions in a highly controlled manner.‬

WHAT ARE THE BENEFITS?

PEALD technology retains the key benefits of ALD, such as excellent conformality, thickness control and within wafer uniformity, while processing at lower temperatures. ‪It also provides the additional benefits of the ability to control the tuning of the film properties and a capability for pre- and post-deposition in-situ treatments.‬​