A strategic partnership between Littelfuse and Monolith Semiconductor has resulted in two 1200-V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs. These SiC MOSFETs, actually not the first fruit from this partnership, are aimed at the industrial and automotive markets. The parts were introduced at last week’s APEC event, amid the on-going GaN verses SiC debate.

The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer ultra-low on-resistance (RDS(ON)) levels, just 120 and 160 mΩ, respectively. These SiC MOSFETs are designed for use as power semiconductor switches in a wide range of various power conversion systems. They also offer a combination of high operating voltages and ultra-fast switching that traditional power transistor solutions such as silicon IGBTs with similar current ratings and packages can’t match.

About the Author

Richard Nass is the Executive Vice-President of OpenSystems Media. His key responsibilities include setting the direction for all aspects of OpenSystems Media’s Embedded and IoT product portfolios, including web sites, e-newsletters, print and digital magazines, and various other digital and print activities. He was instrumental in developing the company's on-line educational portal, Embedded University. Previously, Nass was the Brand Director for UBM’s award-winning Design News property. Prior to that, he led the content team for UBM Canon’s Medical Devices Group, as well all custom properties and events in the U.S., Europe, and Asia. Nass has been in the engineering OEM industry for more than 25 years. In prior stints, he led the Content Team at EE Times, handling the Embedded and Custom groups and the TechOnline DesignLine network of design engineering web sites. Nass holds a BSEE degree from the New Jersey Institute of Technology.