Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation

Abstract

With the view to analyzing piezoresistive effects in silicon microstructures we implemented a rigorous physically-based model in the multidimensional general purpose device simulator DESSISISE In this model, the dependence of the piezoresistive coefficients on temperature and doping concentration is included in a numerically tractable way. Using a commercial TCAD system (ISE), the practicability of the approach is demonstrated by performing a complete simulation sequence for realistic microdevices ranging from the layout design up to the analysis of the device operation.