Abstract :
III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

Abstract :
In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. READ MORE

Abstract :
Measurements play a key role in the development of microwave hardware as they allow engineers to test and verify the RF performance on a system, circuit, and component level. Since modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand of higher datarates, nonlinear characterization using wideband stimuli is becoming increasingly important. READ MORE

Abstract :
The increased power consumption and power density demands of moderntechnologies have increased the technical requirements of DC/DC and AC/DC powersupplies. In this regard, the primary objective of the power supply researcher/engineeris to build energy efficient, high power density converters by reducing the losses andincreasing the switching frequency of converters respectively. READ MORE

Abstract :
Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. READ MORE