Title (fr)

Publication

Application

Priority

JP 9702580 W 19970725

JP 21658396 A 19960729

JP 4970997 A 19970217

Abstract (en)

[origin: WO9805063A1] An epitaxial wafer which is improved in gettering ability to various kinds of contaminants in the device process of the wafer without performing any process by the EG effect after the wafer is cut and formed is expected by simplifying the processes as much as possible so as to reduce the production cost of the wafer, and a silicon epitaxial wafer which exhibits a sufficient IG effect even in a device manufacturing process at a low temperature of below 1,080 DEG C in the device process and a method for manufacturing the wafer are disclosed. A silicon single crystal is grown by the CZ method in an atmosphere where the oxygen concentration is relatively high and the carbon concentration is intendedly high, and the wafer exhibits an excellent gettering ability without being subjected to the EG processing. When a single crystal is pulled up, the oxygen and carbon concentrations are adequately controlled. After the crystal is cut into wafers, they are annealed for a short time at a low temperature. Thus the number of processings is decreased by not conducting various conventional complex EG processings after the wafer formation, except the processing for imparting the IG ability to the wafers, lowering the manufacturing cost. Therefore, the IG ability can be given to an epitaxial wafer by a low-temperature device process, the EG processing is not needed even when double side mirror polishing is necessary to flatten the surface of the wafer with high precision, and hence a wafer adaptable to high-precision flatness is fabricated.