We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility.

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BibTeX @article{Lindvall2012,author={Lindvall, Niclas and Kalaboukhov, Alexei and Yurgens, Avgust},title={Cleaning graphene using atomic force microscope},journal={Journal of Applied Physics},issn={0021-8979},volume={111},issue={6},pages={Article Number: 064904},abstract={We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility. },year={2012},keywords={suspended graphene, layer graphene, transport, films, sio2 },}

RefWorks RT Journal ArticleSR ElectronicID 158011A1 Lindvall, NiclasA1 Kalaboukhov, AlexeiA1 Yurgens, AvgustT1 Cleaning graphene using atomic force microscopeYR 2012JF Journal of Applied PhysicsSN 0021-8979VO 111IS 6AB We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility. LA engDO 10.1063/1.3695451 LK http://dx.doi.org/10.1063/1.3695451 LK http://publications.lib.chalmers.se/records/fulltext/158011/local_158011.pdfOL 30