Abstract

We fabricate field-effect transistors(FETs) by depositing a regioregular poly(3-hexylthiophene) (RR-P3HT) active layer via different preparation methods. The solvent used in the polymer film deposition and the deposition technique determine the film microstructure, which ranges from amorphous or granular films to a well-defined fibrillar texture. The crystalline ordering of RR-P3HT into fibrillar structures appears to lead to optimal FET performances, suggesting that fibrils act as efficient “conduits” for the charge carrier transport. Treating the silicon oxide gate insulator with hexamethyldisilazane enhanced the FET performance.

Received 02 February 2006Accepted 08 June 2006Published online 08 August 2006

Acknowledgments:

The research at UCSB was supported by the Samsung Advanced Institute of Technology. Part of this work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR05-20415. S.C. acknowledges the support by the Korea Research Foundation Grant No. M07-2004-000-10137-0 and M.S. acknowledges the F.R.I.A. (Belgium) for a doctoral fellowship and Communauté française de Belgique for a research stay grant. Ph.L. is Chercheur Qualifié of the “Fonds National de la Recherche Scientifique” (FNRS-Belgium).