Cobaltferritethin films were grown on SiO2/Si(100) substrates using pulsed-laser deposition technique at substrate temperatures ranging from 250 to 600 °C. Thermal expansion mismatch between the film and substrate appears to have a substantial effect on the magnetic properties of the cobaltferritefilms, due to the large magnetoelastic coupling of cobaltferrite. It was shown in this study, that polycrystalline films with (111)-preferred orientation could be prepared at substrate temperatures as low as 250 °C. The growth of crystalline cobaltferritefilms at such low temperatures indicates the potential to use cobaltferrite for microelectromechanical systemsdevices and sensor applications including integration with a wider range of multilayer device structures.

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 107 (2010): 09A516 and may be found at http://dx.doi.org/10.1063/1.3357315.