Abstract

We present the results of a Monte Carlo calculation of the electron velocity and mobility, as well as mobilitymeasurements in compensated GaAs. For appreciable compensation ratios, the peak velocity, negative differential mobility, and peak‐to‐valley velocity ratios are drastically reduced in comparison with those in uncompensated GaAs. This reduction makes the Gunn effect less likely to manifest itself in ion‐implanted GaAs metal‐semiconductor field‐effect transistors and other GaAs devices where compensation is important.