MOS Scaling: Transistor Challenges for the 21st Century (continued an SOI device Table 3: Estimated improvement in circuit speed these parameters on current generation circuit speed improvements is shown in Table 3. We call it best increasing the transistor off-state leakage. Studies done at Intel indicate that NMOS SOI devices require a somewhat higher threshold voltage than bulk devices to maintain an equivalent off-state leakage due to the www.datasheetarchive.com/files/intel/technologies/itj/q31998/articles/art_3g-v1.htm

MOS Scaling: Transistor Challenges for the 21st Century Figure 42: Cross section of an SOI device Table 3: Estimated is shown in Table 3. We call it best case, since to date, no literature paper has demonstrated these device parasitic improvements without increasing the transistor off-state leakage. Studies devices to maintain an equivalent off-state leakage due to the floating body effect[28]. This higher www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3g-v2.htm

MOS Scaling: Transistor Challenges for the 21st Century Figure 42: Cross section of an SOI device Table 3: Estimated is shown in Table 3. We call it best case, since to date, no literature paper has demonstrated these device parasitic improvements without increasing the transistor off-state leakage. Studies devices to maintain an equivalent off-state leakage due to the floating body effect[28]. This higher www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3g-v2-vx2.htm

MOS Scaling: Transistor Challenges for the 21st Century Figure 42: Cross section of an SOI device Table 3: Estimated is shown in Table 3. We call it best case, since to date, no literature paper has demonstrated these device parasitic improvements without increasing the transistor off-state leakage. Studies devices to maintain an equivalent off-state leakage due to the floating body effect[28]. This higher www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3g-v1.htm

MOS Scaling: Transistor Challenges for the 21st Century Figure 42: Cross section of an SOI device Table 3: Estimated is shown in Table 3. We call it best case, since to date, no literature paper has demonstrated these device parasitic improvements without increasing the transistor off-state leakage. Studies devices to maintain an equivalent off-state leakage due to the floating body effect[28]. This higher www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3g.htm