Abstract

ion implantation at moderate doses into nominally undoped bulk single-crystal substrates followed by annealing in the range was used to fabricate diodes that show visible luminescence at and band-edge electroluminescence at under forward bias conditions. The current-voltage behavior of the diodes are characteristic of metal-insulator-semiconductor devices and suggest the implantation creates a more resistive region in the in which holes are created by impact ionization during biasing, similar to the case of electroluminescence in varistors. The series resistance is only due to the use of the conducting substrate.

Received 14 December 2005Accepted 16 February 2006Published online 10 March 2006

Acknowledgments:

This research was sponsored by the USARO under Grant No. DAAD19-01-1-0603, the Army Research Laboratory, Grant No. NSF DMR 0400416, Grant No. 0305228, Dr. L. Hess, DOE Grant No. DE-FC26-04NT42271, and the USAFOSR under Grant No. F49620-03-1-0370 and by DOE Contract No. DE-AC05-00OR22725.