Ishwara B. Bhat is a Professor of Electrical, Computer
and Systems Engineering Department at RPI. He received his B.S.E.E. degree
from Indian Institute of Technology, India and his M.S. and Ph.D. degrees
from Electrical Engineering, Rensselaer Polytechnic Institute (RPI). He
has over 20 years of experience in epitaxial growth and characterization
of several II-VI, III-V and IV-IV semiconductors. He was the Co-Chair of
1996 and 2000 II-VI workshops held in Las Vegas, NV and Albuquerque, NM
respectively and has edited several special issues of Journal of Electronic
Materials. He has served as the member of the Program Committee of several
national and International Conferences. Professor Bhat has published over
75 articles in refereed journals.

Research Interest

His research
interests included growth of wide band gap semiconductors (such as GaN,
SiC and ZnSe) and narrow band semiconductors (such as HgCdTe, InGaSb).
His accomplishments included first demonstrations of: (a) p type doping
of HgCdTe by MOVPE, (b) p type doping of ZnSe by MOVPE using phenylhydrazine,
and, (c) several in-situ grown IR devices in HgCdTe, and development of
ELO growth process for CdTe on Si.

Prof. Bhat
had over 10 multiyear contracts with various government agencies and industrial
labs. His current research is focused on the growth of silicon carbide
epitaxial films for use in high power, high temperature and high voltage
devices, as well as the growth of InGaSb for application in multi-IR technology.