Publications (28)11.33 Total impact

[Show abstract][Hide abstract]ABSTRACT:
Presented is a 3 watt Q-band PHEMT MMIC power amplifier module
with a peak efficiency of 25% at 44.5 GHz, believed to be the highest
reported at this power level and frequency. The waveguide power
amplifier module features the use of thinned 2-mil GaAs MMICs with
off-chip output matching and combining on a 5-mil alumina
substrate

[Show abstract][Hide abstract]ABSTRACT:
EHF military satellite communications uplinks require (ground,
airborne, or shipborne) transmitters capable of rapid beam steering over
a wide scan angle. This allows precise alignment between source and
receiver at all times, even if one or both is in rapid motion. In
addition, it allows a number of signals directed at different receivers
at arbitrary locations in space to be multiplexed real-time.
Multiple-element MMIC modules for a high-power, high-efficiency 44 GHz
transmit phased array are demonstrated. Two-element modules, employing
TRW HEMT-based MMICs, have demonstrated 28 dBm output power per element
and 21-23% module power-added efficiency. We believe these to be the
highest output power and power-added efficiency achieved by MMIC-based
EHF phased array modules to-date

[Show abstract][Hide abstract]ABSTRACT:
Presented is an 850 mW Q-band PHEMT MMIC power amplifier with a
peak efficiency of 34% at 45.5 GHz, believed to be the highest reported
at this power level and frequency. The compact amplifier (3.6 mm by 1.6
mm) features the use of thinned 2-mil GaAs substrate and off-chip output
matching and combining on a 5-mil alumina substrate

[Show abstract][Hide abstract]ABSTRACT:
The authors present a 20 GHz downconverter and a 44 GHz
upconverter for a low cost miniaturized transceiver for EHF SATCOM
terminal applications. The hardware features a set of passivated
pseudomorphic InGaAs HEMT MMICs including a 20 GHz balanced low noise
amplifier and a 44 GHz 100 mW driver amplifier. The upconverter input
and the LO input of the downconverter feature built-in-test (BIT) with
on-chip detectors. The downconverter is packaged in a low temperature
co-fired ceramic (LTCC) substrate, with integrated RF and DC
interconnects, printed resistors, and a buried stripline IF filter

[Show abstract][Hide abstract]ABSTRACT:
A W-band 3-stage monolithic low noise amplifier has been developed
based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation
and stabilization bakes have been introduced for the first time to the
MMIC process to make it more suitable for production. A minimum noise
figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz
and represents the best reported performance to date for any passivated
multi-stage MMIC LNA's operating at W-band

[Show abstract][Hide abstract]ABSTRACT:
Recent development on MMIC power amplifier has pushed the
power-added efficiency (PAE) of 1-W amplifier to 29.4%. The power
amplifier, using 0.15-μm InGaAs T-gate PHEMT devices, can deliver 1.2
W with 25% efficiency at 40 GHz when the drain is biased at 5 V. When
the drain voltage drops to 4 V the output power is 1 W with 9-db
associated gain and 29.4% PAE. The measured linear gain is averaged to
be 12.5 db from 38-44 GHz

[Show abstract][Hide abstract]ABSTRACT:
A broadband monolithic power amplifier has been developed using
0.15 μm T-gate pseudomorphic InGaAs HEMT. When biased for class A
operation, the amplifier has a measured small signal gain of 12.4 to
13.1 dB in the frequency range of 40 to 46 GHz. Saturated output power
of 1.01 watts with 7.03 dB associated gain and 15.1% power-added
efficiency at 44.5 GHz has also been measured

[Show abstract][Hide abstract]ABSTRACT:
A monolithic W-band three-stage low-noise amplifier (LNA) based on 0.1- mu m pseudomorphic (PM) InAlAs/InGaAs/InP high-electron-mobility transistors (HEMTs) has been developed. This LNA has demonstrated a noise figure of 4.3 dB and an associated small-signal gain of 19 dB at 100 GHz with a low DC power consumption of 20 mW. This demonstrates the potential of InP HEMT technology for higher millimeter-wave applications. The gain and noise performance is comparable with the best reported results of the monolithic W-band LNA using GaAs-based PM HEMTs even at this first iteration phase of the development. The HEMTs discussed consume only 30% of the DC power typically needed in the GaAs-based HEMT LNAs with the same device periphery and design approach.

[Show abstract][Hide abstract]ABSTRACT:
The authors report the effect of profile design and MBE (molecular
beam epitaxy) growth conditions on the material characteristics and
device performance of W -band and D -band
InGaAs/InAlAs/InP HEMTs (high electron mobility transistors). The
performance advantage of pseudomorphic channels compared to
lattice-matched devices is significant in these devices. Using
lattice-matched In<sub>0.53</sub>Ga<sub>0.47</sub>As channels, a noise
figure of 1.7 dB with 7.7-dB associated gain at 93 GHz has been
achieved. However, using pseudomorphic
In<sub>0.60</sub>Ga<sub>0.40</sub>As channels, a 1.3-dB noise figure
with 8.2-dB associated gain at 93.5 GHz has been achieved. The authors
have also measured 7.3-dB gain at 141.5 GHz using In<sub>0.60</sub>Ga
<sub>0.40</sub>As devices

[Show abstract][Hide abstract]ABSTRACT:
High-performance W -band monolithic one- and two-stage low
noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices
have been developed. The one-stage amplifier has a measured noise figure
of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the
two-stage amplifier has a measured small signal gain of 13.3 dB at 94
GHz and 17 dB at 89 GHz with a noise figure of 5.5 dB from 91 to 95 GHz.
An eight-stage LNA built by cascading four of these monolithic two-stage
LNA chips demonstrates 49 dB gain and 6.5 dB noise figure at 94 GHz. A
rigorous analysis procedure was incorporated in the design, including
accurate active device modeling and full-wave EM analysis of passive
structures. The first pass success of these LNA chip designs indicates
the importance of a rigorous design/analysis methodology in
millimeter-wave monolithic IC development

[Show abstract][Hide abstract]ABSTRACT:
The authors have successfully developed a 0.1 μm T-gate planar
doped pseudomorphic InGaAs high-electron-mobility transistor (HEMT)
process for the fabrication of low noise and power devices with record
W -band performance. The low noise device has a noise figure of
2.3 dB with an associated gain of 7.5 dB at 92 GHz. When optimized for
power using a planar doped channel, the device exhibited an output power
of 62.7 mW with 4.0 dB gain and 13.2% power added efficiency at 94 GHz.
When tuned for minimum noise, the power device achieved a noise figure
of 3.0 dB with 7.4 dB associated gain at 94 GHz

[Show abstract][Hide abstract]ABSTRACT:
The authors have successfully developed a 0.1 μm T-gate planar
doped pseudomorphic InGaAs high-electron-mobility transistor (HEMT)
process for the fabrication of low noise and power devices with record
W -band performance. The low noise device has a noise figure of
2.3 dB with an associated gain of 7.5 dB at 92 GHz. When optimized for
power using a planar doped channel, the device exhibited an output power
of 62.7 mW with 4.0 dB gain and 13.2% power added efficiency at 94 GHz.
When tuned for minimum noise, the power device achieved a noise figure
of 3.0 dB with 7.4 dB associated gain at 94 GHz

[Show abstract][Hide abstract]ABSTRACT:
A high-performance W -band monolithic two-stage LNA
(low-noise amplifier) based on pseudomorphic InGaAs/GaAs HEMT (high
electron mobility transistor) device has been developed. This amplifier
has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89
GHz. The noise figure is 5.5 dB from 91 to 95 GHz. This is the best
reported performance of a W -band monolithic LNA. The measured
results of this MMIC (monolithic microwave integrated circuit) LNA rival
those of some reported hybrid LNAs. A rigorous analysis procedure was
incorporated in the design, including accurate active device modeling
and full-wave EM analysis of passive structures. The first-pass success
of this LNA chip design indicates the importance of a rigorous
analysis/design methodology in the millimeter-wave monolithic IC
development

[Show abstract][Hide abstract]ABSTRACT:
GaAs-based InGaAs pseudomorphic high electron mobility transistors
(HEMTs) have demonstrated superior low-noise and high-power capabilities
at microwave and millimeter-wave frequencies. The authors present a pair
of 3-stage amplifiers fabricated with the same process demonstrating
excellent noise and power performance. A K -band fully
monolithic LNA (low-noise amplifier) has been demonstrated greater than
33 dB gain over a 4 GHz bandwidth with a noise figure of less than 2 dB
over 2 GHz. A Q -band power amplifier has demonstrated an output
power of 13.3 dBm at 1 dB compression with 25.3 dB of gain and a
saturated output power of 16.1 dBm at 40 GHz. These amplifiers are
designed for insertion into future EHF satellite communication ground
terminals