Abstract

layers, with , were grown on GaN on both the In-polar and N-polar orientations by metal organic chemical vapor deposition. The impact of growth conditions, including temperature and the group-III flow rates, on the surface morphology and indium mole fraction was investigated. In-polar layers had a smooth surface morphology characterized by mounds which decreased in size with increasing supersaturation during growth. Smooth N-polar InAlN was achieved through the use of vicinal sapphire substrates with misorientation angles of 3°–5° toward , and a trend of an increase in step bunching with decreasing supersaturation was observed for N-polar InAlN layers. The indium incorporation increased with decreasing growth temperature and increasing growth rate for both In-polar and N-polar layers. The indium incorporation was similar for both orientations on samples which were coloaded in our reactor.