Low-profile high-power switch package for GaN, SiC, and GaAs devices

San Diego, CA — StratEdge has annouced a Beryllium Oxide (BeO) package and full assembly and testing services for high power semiconductor switches and small Gallium Nitride (GaN), Silicon Carbide (SiC), and Gallium Arsenide (GaAs) devices. Applications for these packages include test and measurement, military radios, and radar.

The StratEdge BeO package has a thermal conductivity of 270 W/mK (Watts/meter Kelvin). The 0.205 inch diameter circular package has a BeO disk base to accommodate devices of up to 0.030 by 0.040 inches. This standard hermetic package comes with a circular metal lid with gold tin preform. The package is designed with four leads to accommodate single pole, three throw switch (SP3T) devices. The maximum assembled package height, including the lid, is 0.056 inches.

"Their small size and ability to draw a considerable amount of heat away from tiny high power devices make StratEdge's BeO packages perfect for older technology silicon diodes as well as newer silicon carbide and gallium nitride devices," explained Tim Going, president and CEO of StratEdge.

StratEdge assembly services are performed at the company's headquarters in San Diego, CA. They include eutectic or epoxy die attach, gold or aluminum wedge-to-wedge thermosonic wire bonding, lidding, lead trimming, marking, bulk packaging, and testing.

The BeO packages are available as part of the company's latest Power Package family, which features thermally enhanced packages in many shapes, sizes, and lead counts. The materials used in the packages have matched coefficients of expansion to mitigate the inherent stresses of brazing dissimilar materials together. All packages are designed for high reliability and offer excellent RF performance over the range of the device. All packages are capable of passing MIL-STD 883 fine and gross hermeticity testing and meet RoHS and WEEE compliance standards.