Question

Figure P2.52 gives the electron and hole concentrations in a
2-um-wide region of silicon. In addition, there is a constant
electric field of 20 V/cm present in the sample. What is the total
current density at x=0? What are the individual drift and diffusion
components of the hole and electron current densities at x =1.0 um?
Assume that the electron and hole mobilities are 350 and 150
cm^2/Vs, respectively.