Abstract

Undoped Ga0.47In0.53As layers were grown by molecular beam epitaxy lattice matched to InP at substrate temperatures, Ts, in the range from 100 to 600 °C. X‐ray diffraction indicated a widening of the vertical lattice parameter and a simultaneous increase of the arsenic content at low growth temperature. The epitaxial layers were single‐crystalline down to Ts=125 °C. The room‐temperature residual carrier concentrations and the related mobilities for layers grown below 350 °C are strongly affected by Ts, whereas at 77 K an influence of Ts on these parameters is already visible at 450 °C. At the very low growth temperatures the epitaxial layers show highly conductive behavior attributed to defect induced ionized deep centers.