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Abstract

In this paper the thermal instability problems in semiconductor power devices are briefly presented. Experimental observations about these phenomena can be achieved by using infrared radiometry to obtain a temperature mapping of the surface of the devices. Our system, based on a radiometric microscope with an automatic scanning and elaboration system, is described. Finally, some results of our system, consisting in dynamic temperature maps obtained on two different devices, are presented, and the causes of their different thermal instability are briefly discussed.

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Journal of Applied Remote SensingJournal of Astronomical Telescopes Instruments and SystemsJournal of Biomedical OpticsJournal of Electronic ImagingJournal of Medical ImagingJournal of Micro/Nanolithography, MEMS, and MOEMSJournal of NanophotonicsJournal of Photonics for EnergyNeurophotonicsOptical EngineeringSPIE Reviews