Abstract

Molybdenum disulfide (MoS2) field effect transistors(FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FETdevices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300 K without a high-κ dielectric overcoat and increased to 16.1 cm2/V s with a high-κ dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109.

Received 20 March 2013Accepted 23 April 2013Published online 16 May 2013

Acknowledgments:

The authors acknowledge the support of the Army Research Lab (ARL) Director's Strategic Initiative (DSI) program on interfaces in stacked 2D atomic layered materials. The authors would also like to thank Dr. Pani Varanasi, ARO for his in-depth technical discussion on 2D atomic layer R&D. P.M.A., J.L., S.N, and Z.L. also acknowledge funding support from the ARO MURI program on 2D materials. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARL or the U.S. Government. The U.S. Government is authorized to reproduce or distribute reprints for Government purposes notwithstanding any copyright notation herein.