Abstract:
Continuing to expand its capacity, Korea's Samsung Electronics Co. Ltd has disclosed plans that it is looking to build a new wafer fab for use in processing devices at the 65nm node. The proposed fab would be a 300mm facility, which would make NAND-based flash memories and other 65nm products. The company is already developing its first sub-70nm parts, including an 8-gigabit flash-memory device for advanced NAND applications.