Power Management - Power MOSFET Drivers

The Serial SuperFlash® Kit 2 allows evaluation of Microchip's Serial Flash Devices which are made using the SST SuperFlash® technology. The Serial SuperFlash Kit 2 contains three Serial Flash Daughter Boards. The Serial Flash Daughter Board is an evaluation board designed to interface with the mikroBUS™ connector on the Explorer 16/32 Development Board (DM240001-2). It can also interface with the PICtail™ Plus connector located on the Explorer 16 Development Board (DM240001).

The MIC4100, MIC4101, MIC4103 and MIC4104 are a family of high-frequency, 100V MOSFET drivers. Each part contains a high-side and low-side driver and will drive many switching power supply topologies. Refer to the MIC4100/1 and MIC4103/4 specifications for detailed information.
This evaluation board provides a platform for evaluating any of the drivers. The evaluation board schematic is shown in Figure 1. A 1μF, 100V ceramic capacitor is connected between the “HV Supply Input” and “Ground” terminals and provides high frequency decoupling on the board. 0.1μf capacitors are used for decoupling the VDD and HB pins of the driver. 100V, N-Channel, SO-8 FETs are included with the board.

The MIC4414 and MIC4415 are low-side MOSFET drivers designed to switch an N-channel enhancement type MOSFET in low-side switch applications. The MIC4414 is a non-inverting driver and the MIC4415 is an inverting driver. These drivers feature short delays and high peak current to produce precise edges and rapid rise and fall times.

The MIC4414 and MIC4415 are low-side MOSFET drivers designed to switch an N-channel enhancement type MOSFET in low-side switch applications. The MIC4414 is a non-inverting driver and the MIC4415 is an inverting driver. These drivers feature short delays and high peak current to produce precise edges and rapid rise and fall times.

The MIC4478, MIC4479, and MIC4480 are low-side dual MOSFET drivers. They are designed to switch N-channel enhancement type MOSFETs from TTL-compatible control signals for low-side switching applications. The MIC4478 is dual non-inverting, the MIC4479 is dual inverting, and the MIC4480 has complimentary non-inverting and inverting drivers. Short propagation delays and high peak currents produce precise edges and rapid rise and fall times. The MIC4478/4479/4480 are powered from a +4.5V to +32V supply voltage. The on-state gate drive output voltage is approximately equal to the supply voltage (no internal regulators or clamps). In a low-side configuration, the drivers can control a MOSFET that switches any voltage up to the rating of the MOSFET.

The MIC4478, MIC4479, and MIC4480 are low-side dual MOSFET drivers. They are designed to switch N-channel enhancement type MOSFETs from TTL-compatible control signals for low-side switching applications. The MIC4478 is dual non-inverting, the MIC4479 is dual inverting, and the MIC4480 has complimentary non-inverting and inverting drivers. Short propagation delays and high peak currents produce precise edges and rapid rise and fall times. The MIC4478/4479/4480 are powered from a +4.5V to +32V supply voltage. The on-state gate drive output voltage is approximately equal to the supply voltage (no internal regulators or clamps). In a low-side configuration, the drivers can control a MOSFET that switches any voltage up to the rating of the MOSFET.

The MIC4478, MIC4479, and MIC4480 are low-side dual MOSFET drivers. They are designed to switch N-channel enhancement type MOSFETs from TTL-compatible control signals for low-side switching applications. The MIC4478 is dual non-inverting, the MIC4479 is dual inverting, and the MIC4480 has complimentary non-inverting and inverting drivers. Short propagation delays and high peak currents produce precise edges and rapid rise and fall times. The MIC4478/4479/4480 are powered from a +4.5V to +32V supply voltage. The on-state gate drive output voltage is approximately equal to the supply voltage (no internal regulators or clamps). In a low-side configuration, the drivers can control a MOSFET that switches any voltage up to the rating of the MOSFET.

The MIC4604 is an 85V Half Bridge MOSFET driver. The MIC4604 features fast 39ns propagation delay times and 20ns driver rise/fall times for a 1nF capacitive load. The low-side and high-side gate drivers are independently controlled. The MIC4604 has TTL input thresholds. It includes a high-voltage internal diode that helps charge the high-side gate drive bootstrap capacitor.

The MIC4605 is an 85V half-bridge MOSFET driver that features adaptive-dead-time and shoot-through protection. The adaptive-dead-time circuitry actively monitors the half-bridge outputs to minimize the time between high-side and low-side MOSFET transitions, thus maximizing power efficiency. Anti-shoot-through circuitry prevents erroneous inputs and noise from turning both MOSFETs on at the same time. Additionally, the MIC4605’s adjustable gate drive sets the gate drive voltage to VDD for optimal MOSFET RDS(ON), which minimizes power loss due to the MOSFET’s RDS(ON).

The MIC4605 is an 85V half-bridge MOSFET driver that features adaptive-dead-time and shoot-through protection. The adaptive-dead-time circuitry actively monitors the half-bridge outputs to minimize the time between high-side and low-side MOSFET transitions, thus maximizing power efficiency. Anti-shoot-through circuitry prevents erroneous inputs and noise from turning both MOSFETs on at the same time. Additionally, the MIC4605’s adjustable gate drive sets the gate drive voltage to VDD for optimal MOSFET RDS(ON), which minimizes power loss due to the MOSFET’s RDS(ON).

The MIC4605 is an 85V half-bridge MOSFET driver that features adaptive-dead-time and shoot-through protection. The adaptive-dead-time circuitry actively monitors the half-bridge outputs to minimize the time between high-side and low-side MOSFET transitions, thus maximizing power efficiency. Anti-shoot-through circuitry prevents erroneous inputs and noise from turning both MOSFETs on at the same time. Additionally, the MIC4605’s adjustable gate drive sets the gate drive voltage to VDD for optimal MOSFET RDS(ON), which minimizes power loss due to the MOSFET’s RDS(ON).

The MIC4605 is an 85V half-bridge MOSFET driver that features adaptive-dead-time and shoot-through protection. The adaptive-dead-time circuitry actively monitors the half-bridge outputs to minimize the time between high-side and low-side MOSFET transitions, thus maximizing power efficiency. Anti-shoot-through circuitry prevents erroneous inputs and noise from turning both MOSFETs on at the same time. Additionally, the MIC4605’s adjustable gate drive sets the gate drive voltage to VDD for optimal MOSFET RDS(ON), which minimizes power loss due to the MOSFET’s RDS(ON).

The MIC4606 is an 85V full-bridge MOSFET driver that features adaptive dead time and shoot-through protection. The adaptive dead time circuitry actively monitors both sides of the full-bridge to minimize the time between high-side and low-side MOSFET transitions, thus maximizing power efficiency. Anti-shoot-through circuitry prevents erroneous inputs and noise from turning both MOSFETS of each side of the bridge on at the same time.

The MIC4606 is an 85V full-bridge MOSFET driver that features adaptive dead time and shoot-through protection. The adaptive dead time circuitry actively monitors both sides of the full-bridge to minimize the time between high-side and low-side MOSFET transitions, thus maximizing power efficiency. Anti-shoot-through circuitry prevents erroneous inputs and noise from turning both MOSFETS of each side of the bridge on at the same time.

The MIC4607 is an 85V, three-phase MOSFET driver. The MIC4607 features a fast (35ns) propagation delay time and 20ns driver rise/fall times for a 1nF capacitive load. TTL inputs can be separate high- and low-side signals or a single PWM input with high and low drive generated internally. High- and low-side outputs are guaranteed to not overlap in either mode. The MIC4607 includes overcurrent protection as well as a high-voltage internal diode that charges the high-side gate drive bootstrap capacitor.A robust, high-speed, and low-power level shifter provides clean level transitions to the high-side output. The robust operation of the MIC4607 ensures that the outputs are not affected by supply glitches, HS ringing below ground, or HS slewing with high-speed voltage transitions. Undervoltage protection is provided on both the low-side and high-side drivers. The MIC4607 is available in a both a 28-pin 4mm ? 5mm QFN and 28-pin TSSOP package with an operating junction temperature range of -40°C to +125°C.

The MIC4608 is a 600V Half Bridge IGBT or MOSFET driver. The MIC4608 features a 450ns propagation delay including a 200ns input filtering time to prevent unwanted pulses. The low-side and high-side gate drivers are independently controlled (with shoot thru protection) or controlled with a single PWM signal. The MIC4608 has TTL input thresholds. Under-voltage protection is provided on both the low-side and high-side drivers.

The MIC4609 motor driver evaluation board demonstrates the capabilities of Microchip’s MIC4609 High Voltage, 3-Phase motor gate driver. The evaluation board contains the MIC4609 3-Phase driver, (6) IGBTs configured as a 3-Phase bridge, an overcurrent protection circuit and current/voltage sensing that can be fed back to an external controller for closed loop control of a motor.

The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an Nchannel enhancement type MOSFET in high-side or low–side applications. The MIC5019 operates from a 2.7V to 9V supply. It generates gate voltages of 9.2V from a 3V supply and 16V from a 9V supply. The device consumes a low 77μA of supply current and less than 1μA of supply current in shutdown mode.

The MIC5060 MOSFET driver is designed for gate control of N-channel, enhancement-mode, and power MOSFETs used as high-side or low-side switches. The MIC5060 can sustain an on-state output indefinitely. The MIC5060 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The driver is capable of turning on a logic-level MOSFET from a 2.75V supply or a standard MOSFET from a 5V supply. The gate-to-source output voltage is internally limited to approximately 15V. The MIC5060 is protected against automotive load dump, reversed battery, and inductive load spikes of –20V.