Abstract

We report on photoluminescence in the 1.7–2.1μm range of silicon doped with thulium. This is achieved by the implantation of Tm into silicon that has been codoped with boron to reduce the thermal quenching. At least six strong lines can be distinguished at 80K; at 300K, the spectrum is dominated by the main emission at 2μm. These emissions are attributed to the trivalent Tm3+ internal transitions between the first excited state and the ground state.

References

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Table 1

List of the Main Transitions, in nm, Identified in the Tm3+:Si System (This Work, at 80K and 300K) as Well as PreviouslyReported Transitions from [9] (CaWO4/77K), [10] (KCaF3/15K), [11] (Yttrium Scandium Gallium Garnet/77K), and [12]