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Abstract

Disclosed is an optical bus network with laser diodes, photodiodes and waveguides integrated on a GaAs substrate where the relevant epitaxial and structural features are transferred from the rigid wafer via a lift-off process to a thin flexible MYLAR membrane. A network configuration for VLSI chip-interconnects has been disclosed in the preceding article which describes describing a folded bus topology for high-speed optical signal transmission. Optical bus networks offer lower bus driver currents, shorter bus cycle times, and reduced footprint compared to unterminated electrical buses with CMOS-driver circuits. In addition, the epitaxial lift-off and bonding of the network structure on flexible ribbon carriers allow multilayer layouts.

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United States

Language

English (United States)

This text was extracted from an ASCII text file.

This is the abbreviated version, containing approximately
61% of the total text.

Optical Networks for VLSI Interconnects on Flexible GaAs
Substrate

Disclosed is
an optical bus network with laser diodes,
photodiodes and waveguides integrated on a GaAs substrate where the
relevant epitaxial and structural features are transferred from the
rigid wafer via a lift-off process to a thin flexible MYLAR membrane.
A network configuration for VLSI chip-interconnects has been
disclosed in the preceding article which describes describing a
folded bus topology for high-speed optical signal transmission.
Optical bus networks offer lower bus driver currents, shorter bus
cycle times, and reduced footprint compared to unterminated
electrical buses with CMOS-driver circuits.
In addition, the
epitaxial lift-off and bonding of the network structure on flexible
ribbon carriers allow multilayer layouts.

A thin (N100
o) AlAs layer 5 mm - 10 mm below all relevant
epitaxial and etching features constituting the array of laser
diodes, photodiodes, and waveguides, allows epitaxial lift-off by
hydro fluoric etching (1). GaAs films as
large as several cm2 have
been lifted off and transferred to a Si carrier (1). The figure
shows a cross-section and top-view of an AlGaAs ridge laser with
etched mirrors and self-aligned optical waveguide (2). When operated
under reverse polarity the same laser structure can also be used as a
photodiode. Details of the laser
photodiode structures with attached
waveguide integrated in the GaAs film 1 are shown with lase...