Abstract

We present the electric properties of nanowire field-effect transistors showing ambipolar conduction. Be dopednanowires are grown by the vapor-solid-solid mechanism using molecular beam epitaxy with in situ deposited Au catalyst particles. -type conduction in InAsnanowires is challenging because of the Fermi-level pinning above the conduction band edge at the nanowiresurface that leads to creation of an electron inversion layer. We demonstrate that this task is possible without a modified surface and report a strong temperature dependence of the on-off ratio caused by the surface inversion layer.