My question is related to understanding of device physics of Floating Gate memory cells. In one of the text it is mentioned that the Fowler-Nordheim tunneling (FNT) programming and erasing of floating gate memory cells are self limiting in nature due to change in threshold voltage of Floating gate MOSFET. Though intuitively it makes sense but in other text the equation for tunnel current density of doesn't involve anything related to threshold voltage.

So is there any research paper which shows mathematically that FNT programming and erase of Floating gate memory cells are self limiting in nature.