Abstract

We have theoretically performed the detailed physical process and the temperature dependence of the hydrogen-enhanced amorphous-to-crystalline transformation of silicon upon plasma-enhanced chemical vapor deposition(PECVD) using the kinetic Monte Carlo simulations. It is found that the epitaxialsilicon can be obtained at very low temperatures upon PECVD with dilution. Our simulations have profound implications for closing the gap between atomic-scale and macroscopic measurements and gaining a full understanding of PECVDgrowth.