Abstract

Yb‐doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta‐diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×1015 cm−3. The doped layers exhibited the characteristic Yb+3‐4f photoluminescent emission at 1.23 eV. The low‐temperature photoluminescence indicates the association of Yb with other centers to form complexes.