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Description

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Abstract: Atomically thin 2D Transition metal dichalcogenide (TMD) materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. Our recent demonstration in vapor phase growth of TMD monolayer as MoS2 and WSe2 has stimulated the research in growth and applications. The growth of TMD layers is scalable and these layer materials can be transferred to desired substrates, making them suitable building blocks for constructing multilayer stacks for various applications. 2D monolayer building blocks can be used to form p-n junctions.

It is known that Moore’s law may not be valid in 7 nm technology nodes if we consider only Si or III-V semiconductors. 2D TMD materials are also promising materials for post-Si electronics, where their ultra-thin body structure may be able to serve for 5 nm and 3 nm technology nodes, meaning that Moore’s Law could be further extended with these materials. We have demonstrated a 10 nm channel length of transistor based on MoS2 few layers using microelectronic compatible processes.

About the Speaker: Prof. Lain-Jong Li obtained his PhD from Oxford University in 2006 after 5 years of R&D at Taiwan Semiconductor Manufacturing Company. He obtained his PhD from Oxford University in 2006, followed by an assistant professor position at Nanyang Technology University, Singapore. He joined KAUST in 2014 and is currently a Professor of MSE at KAUST’s Physical Sciences and Engineering Division. Li’s publications have achieved > 12460 citations in more than 210 SCI journals and a h-index of 55 (ISI Web of knowledge). He is also a CTO of one start-up company, Nitronix Nanotech Inc., in Taiwan.