Abstract

By measuring the spontaneous emission from strained and unstrained 1.5 μm InGaAs quantum well lasers as a function of temperature we deduce the temperature dependence of the radiative current density at threshold corresponds to a characteristic temperature T0≊300 K, close to that expected from theory, whereas T0 of the threshold current is around 60 K. We conclude from our analysis that the large temperature dependence of long wavelength lasers is due to Auger recombination.