The third generation of MESH OVERLAY Power
MOSFETsSTP5NC90Z - STP5NC90ZFPSTB5NC90Z - STB5NC90Z-1 for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener Diodes between Gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications. By STMicroelectronics