Abstract

Superconducting Bi2Sr2Ca2Cu3Oxthin films have been prepared insitu at atmospheric pressure by an inductively coupled, argon‐oxygen rf plasma. This high Tc phase has been achieved by exposing the grownfilm,insitu, to the same argon‐oxygen plasma used for the deposition of the film. No post‐annealing steps are required. Bi2Sr2Ca2Cu3Oxfilms with critical temperatures of 100 K and critical current densities of 1×105 A/cm2 at 77 K and zero field have been obtained at a deposition rate of 100–200 Å/min. The films are mirror smooth with very few particulates and pinholes. Control of the substrate heater temperature is critical as high‐quality filmsgrow only in a narrow temperature range. The effect of plasma treatment and substrate heater temperature is discussed.