Abstract

Deep level transient spectroscopy (DLTS) for investigating electronic properties of
self-assembled InAs/GaAs quantum dots (QDs) is described in an approach, where experimental
and theoretical DLTS data are compared in a temperature-voltage representation. From
such comparative studies, the main mechanisms of electron escape from QD-related levels
in tunneling and more complex thermal processes are discovered. Measurement conditions
for proper characterization of the levels by identifying thermal and tunneling processes
are discussed in terms of the complexity resulting from the features of self-assembled
QDs and multiple paths for electron escape.