The displacement damage hardness that can be achieved using p-channel charge coupled devices (CCD) was originally demonstrated in 1997 and since then a number of other studies have demonstrated an improved tolerance to radiationinduced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×109 and 1.24×1011 protons.cm-2. The number of defects identified using trap pumping, dark current and cosmetic quality immediately after irradiation and over a period of 150 hours after the irradiation with the device held at 153 K and then after different periods of time at room temperature are described. The device also exhibited a flatband voltage shift of around 30 mV per krad, determined by the reduction in full well capacity.