Abstract

During the past years Si MMIC have entered the cellular base station arena. It has been necessary to demonstrate the technical capabilities of these products, in terms of power and in terms of bandwidth/gain flatness. These two particular topics are essential in this multiband high power domain , where linearisation is very often required. This article presents the technical difficulties specific to high power Si MMIC, the associated solutions, and two circuits demonstrating their power and bandwidth capabilities.

Abstract

During the past years Si MMIC have entered the cellular base station arena. It has been necessary to demonstrate the technical capabilities of these products, in terms of power and in terms of bandwidth/gain flatness. These two particular topics are essential in this multiband high power domain , where linearisation is very often required. This article presents the technical difficulties specific to high power Si MMIC, the associated solutions, and two circuits demonstrating their power and bandwidth capabilities.