SiC power switch devices such as Vertical Junction Field Effect Transistors (VJFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are being developed for power conditioning applications in a variety of rugged environments. While the SiC devices have been well characterized for high-temperature behavior, much less data is available for radiation effects, including gamma and proton radiation. Here, SemiSouth, Auburn, and Georgia Tech propose testing of SemiSouth SiC VJFETs and Auburn MOSFETs over a temperature range of ambient to 300C, both DC and dynamic testing, done pre- and post-radiation test. Gamma radiation will be from a Co 60 source, at 1.33 MeV, and the proton radiation will be from 1-4 MeV and 63 MeV. The analyis will help steer the development of radiation-hardened SiC switches in Phase II.