Abstract

The effects of Si and Al ion implantation on the resistive switching properties of a
-based resistive random access memory (RRAM) device are investigated. Testing results demonstrate that Si or Al implantation into
films results in reduced electroforming voltages and improves reproducibility of resistive switching over 1,000 cycles as measured by a DC voltage sweeping method. Furthermore, the Si or Al implantation into
resistive switching memory devices was found to improve device yields, reduce operating voltages and their variability, expand on/off resistance ratio (>103 for Al-doped, > 500 for Si-doped), and increase retention times (>3 × 105 s at room temperature). Doping by Si or Al ion is suggested to improve the formation of conducting filaments in
matrix and thus improve the performances of the Pt/Ti/
/Pt device.