Abstract

The stability of films during thermal processing will help determine their usefulness as an alternative gate dielectric for advanced complementary metal-oxide-semiconductordevices. We used medium energy ion scattering and atomic force microscopy to examine the degradation of ultrathin layers under ultrahigh vacuum annealing and the effects of low-temperature oxidation. No degradation is observed at 900 °C, but voids appear at higher temperatures. Growth of interfacial takes place during low-pressure oxidation at 600 °C, which may limit the capacitance of extremely thin structures.