Title: Ultrafast scanning probe microscopy

An ultrafast scanning probe microscopy method is described for achieving subpicosecond-temporal resolution and submicron-spatial resolution of an observation sample. In one embodiment of the present claimed invention, a single short optical pulse is generated and is split into first and second pulses. One of the pulses is delayed using variable time delay means. The first pulse is then directed at an observation sample located proximate to the probe of a scanning probe microscope. The scanning probe microscope produces probe-sample signals indicative of the response of the probe to characteristics of the sample. The second pulse is used to modulate the probe of the scanning probe microscope. The time delay between the first and second pulses is then varied. The probe-sample response signal is recorded at each of the various time delays created between the first and second pulses. The probe-sample response signal is then plotted as a function of time delay to produce a cross-correlation of the probe sample response. In so doing, the present invention provides simultaneous subpicosecond-temporal resolution and submicron-spatial resolution of the sample. 6 Figs.

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An ultrafast scanning probe microscopy method for achieving subpicosecond-temporal resolution and submicron-spatial resolution of an observation sample. In one embodiment of the present claimed invention, a single short optical pulse is generated and is split into first and second pulses. One of the pulses is delayed using variable time delay means. The first pulse is then directed at an observation sample located proximate to the probe of a scanning probe microscope. The scanning probe microscope produces probe-sample signals indicative of the response of the probe to characteristics of the sample. The second pulse is used to modulate the probe ofmore » the scanning probe microscope. The time delay between the first and second pulses is then varied. The probe-sample response signal is recorded at each of the various time delays created between the first and second pulses. The probe-sample response signal is then plotted as a function of time delay to produce a cross-correlation of the probe sample response. In so doing, the present invention provides simultaneous subpicosecond-temporal resolution and submicron-spatial resolution of the sample.« less

The author has merged the techniques of ultrafast laser spectroscopy with those of scanning probe microscopy to develop an ultrafast scanning tunneling microscope. The response of a tunneling gap to a 650 fs voltage pulse was measured.

Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 {mu}s. On the basis ofmore » the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 {mu}C/cm{sup 2}, which is equivalent to 1/20 electron per nanometer square at room temperature.« less

We have measured the response of the tunneling gap of a scanning tunneling microscope to excitation by a subpicosecond electrical pulse. Combining ultrashort laser pulses techniques with scanning tunneling microscopy (STM), we have obtained simultaneous 2-ps time resolution and 50-A spatial resolution. This is a 9 orders of magnitude improvement in the time resolution currently attainable with STM. The potential of this powerful technique for studying ultrafast dynamical phenomena on surfaces with atomic resolution and mesoscopic electronic device physics is discussed.