Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in a focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. Lastly, we further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors.