Multiple-pulse laser thermal annealing for the formation of Co-silicided junction

Author

Lee, Pooi See

Pey, Kin Leong

Chow, F. L.

Tang, L. J.

Tung, Chih Hang

Wang, X. C.

Lim, G. C.

Date of Issue

2006

School

School of Materials Science and Engineering

Version

Accepted version

Abstract

Formation of Co-silicide contact layers on narrow
silicon regions using multiple-pulse excimer laser annealing is
demonstrated. Excellent performance of junction leakage behavior
can be attained on narrow-width n+/p and p+/n junction
as compared with standard rapid thermal annealed samples.
Liquid-phase epitaxial Co-silicide regrowth has been found to
occur and create a smooth and abrupt silicide/Si interface with
high junction integrity using multiple-pulse laser annealing. Heat confinement created by the shallow trench isolation surrounding
the narrow-width n+/p and p+/n junctions has minimized rapid
quenching that might result in an amorphous structure. This has
facilitated the crystallization of Co-silicide with multiple-pulse
laser annealing.