The generation of defects during the injection of charge carriers in metalâ€“oxideâ€“semiconductor capacitors with ultrathin SiON/ZrO[sub 2] gate stacks is investigated. A polarity dependence for the defect generation is revealed. It is shown that this polarity effect is inconsistent...

Studies of the photocapacitance of a-As[sub 2]Se[sub 3] films reveal that its relaxation has a fast and a slow component, leading to two distinct spectra for the density and absorption cross section of deep levels, with different thresholds and magnitudes. The authors associate the fast...

The effect of hydrogen postoxidation annealing (POA) on the reliability of gate oxide formed in 4H-SiC metal-oxide-semiconductor (MOS) capacitors has been investigated. Argon POA at 1200 Â°C and hydrogen POA were carried out over a temperature range of 400-1000 Â°C to improve the properties...

An easily implemented method for measuring the capacitance of semiconductor structures using small-amplitude current pulses is described. It is shown that the accuracy of the method described can be improved significantly when a ballast capacitor is employed and, in addition, a calibration...

Microwave plasma oxidation (below 200 Â°C) of partially strain-compensated Si[sub 1-x-y]Ge[sub x]C[sub y] (Ge:C=20:1 and 40:1) with and without a Si cap layer is reported. The electrical properties of grown oxides have been characterized using a metalâ€“oxideâ€“semiconductor...