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A polymeric heat resistant photopolymerizable composition of a polyamide
ester resin containing photopolymerizable groups useful for forming relief
structures on electrical devices such as capacitors, integrated circuits
and semiconductors; a solution of the composition is applied to a
substrate such as a coated silicon wafer which forms an electrical device,
dried to form a film, the film is exposed to radiation through a pattern
and photopolymerized; the unexposed and unpolymerized part of the film is
dissolved off and the resulting relief structure is baked to form a
polyimide structure with sharp definition and has good mechanical,
chemical and electrical properties; to reduce radiation exposure time and
increase the rate of photopolymerization the following constituents are
used in the composition:
a radiation sensitive polymerizable polyfunctional acrylate compound and a
photopolymerization initiator of an aromatic biimidazole.

wherein the polyamide ester resin upon heating converts to a polyimide resin.

2. The improved composition of claim 1 in which the polyamide ester resin comprises the following structure: ##STR2## wherein.fwdarw.denotes isomerism, R is an aromatic radical, R.sup.1 is an organic radical containing a photo polymerizable
olefinic double bond, R.sup.2 is an aromatic, aliphatic or cycloaliphatic radical and n is a positive integer sufficiently large to provide the resin with a weight average molecular weight of about 5,000 to 75,000 determined by gel permeation
chromatography.

3. The composition of claim 2 in which the polyamide ester resin comprises R from pyromellitic dianhydride, R.sup.1 from hydroxy alkyl methacrylate or hydroxy alkyl acrylate and R.sup.2 from an aromatic diamine.

6. The composition of claim 5 in which the leuco dye is an alkyl amino-aromatic alkane.

7. The composition of claim 4 or 5 in which the photopolymerization initiator is

bis(2-o-chlorophenyl-4,5-diphenyl imidazolyl) or

bis[2-o-chloro-phenyl-4,5-di(m-methoxyphenyl imidazolyl].

8. The composition of claim 4 or 5 containing a photosensitizer.

9. The composition of claim 2 in which the polyamide ester resin is of pyromellitic dianhydride esterified with hydroxyethyl methacrylate and reacted with oxydianiline, the polyfunctional acrylate compound is trimethylol propane polyethyoxylate
having a weight average molecular weight of about 500-1500, the photopolymerization initiator is bis(2-o-chlorophenyl-4,5-diphenyl imidazolyl), and the composition contains tris(diethylamino-o-tolyl) methane, and a photosensitizer of tetramethyldiamino
benzophenone.

10. The composition of claim 2 in which the polyamide ester is of pyromellitic dianhydride, esterified with hydroxyl ethyl methacrylate and reacted with oxydianiline, the polyfunctional acrylate is trimethylol propane trimethacrylate or
trimethylol propane triacrylate, the polymerization initiator is bis(2-o-chlorophenyl-4,5-diphenyl imidazolyl) and the composition contains tris(diethylamino-o-tolyl) methane and a photosensitizer of tetramethyldiamino benzophenone.

Description

BACKGROUND OF THE INVENTION

This invention relates to an improved polymeric heat resistant photopolymerizable composition useful for forming relief structures on electrical devices such as semiconductors and capacitors.

Photopolymerizable polymeric compositions used to form relief structures on electrical devices are well known as shown in Sigusch et al. U.S. Pat Nos. 3,953,877 issued Apr. 27, 1976, Kleeberg et al. 3,957,512 issued May 18, 1976 and Rubner et
al. 4,040,831 issued Aug. 9, 1977 now U.S. Pat. Re. No. 30,186 reissued Jan. 8, 1980. These compositions have limited commercial use since the radiation exposure time required to photopolymerize these compositions is too long for a modern process.
Exposure times of 1 minute and preferably of 30 seconds or less are needed for an efficient process. The improved composition of this invention provides a composition that can be photopolymerized in a relatively short time period of exposure to
radiation.

SUMMARY OF THE INVENTION

An improved radiation polymerizable composition of a polyamide ester resin containing photopolymerizable groups and a solvent for the resin; the improvement that is used in this composition is as follows:

The improved radiation polymerizable composition is used to form relief structures on electrical devices such as capacitors and semiconductors. A solution of the composition is applied to a substrate such as a silicon wafer coated with a silicon
dioxide layer and dried and forms a film on the substrate. The film is then exposed to radiation through a pattern and photopolymerized to form a relief structure. The unexposed and unpolymerized part of the film is dissolved off with a developer
solution. The resulting relief structure is baked to remove the photopolymerized material and to form a polyimide structure with a sharp definition and with good mechanical, chemical and electrical properties.

To reduce radiation exposure time and increase the rate of photopolymerization, of a composition of a polyamide ester resin containing photopolymerizable groups, the following constituents are used in the composition:

about 5-30% by weight, based on the weight of resin, of radiation sensitive polymerizable polyfunctional acrylate compound and about 0.5-15% by weight, based on the weight of the resin, of photopolymerization initiator of aromatic biimidazole.

It is possible to obtain improved results, i.e., shorter polymerization times without the use of the above polymerizable polyfunctional acrylate compounds in the composition. For most practical commercial processes, the presence of the
polyfunctional acrylate compounds is highly preferred.

All molecular weights made reference to herein are determined by gel permeation chromatography.

Also, hexaaryl biimidazoles can be used as photopolymerization initiators as shown in Fishman U.S. Pat. No. 3,552,973 issued Jan. 5, 1971.

To enhance the photopolymerization, other photoinitiators and photosensitizers in amounts of about 0.1-10% by weight, based on the weight of the resin, can be used in the composition. Typically useful photosensitizers and initiators include
aromatic ketones such as benzophenone, Michler's ketone [4,4'-bis(dimethylamino)benzophenone], 4,4'-bis(diethylamino)benzophenone, 4-acryloxy-4'-diethylaminobenzophenone, 4-methoxy-4'-dimethylaminobenzophe none, 2-ethylanthraquinone, phenanthraquinone,
2-t-butylanthraquinone, 1,2-benzanthraquinone, 2,3-benzanthraquinone, 2,3-dichloronaphthoquinone, benzil dimethyl ketal, and other aromatic ketones such as disclosed in aforementioned U.S. Pat. No. 3,552,973; benzoin, benzoin ethers such as benzoin
methyl ether, benzoin ethyl ether, benzoin isobutyl ether, and benzoin phenyl ether, methylbenzoin, ethylbenzoin and other benzoins.

It is possible to use combinations of both photosensitizer and photopolymerization initiators. Generally, the photopolymerization time is longer if the photosensitizer is not added.

It is preferred to have a compound present that changes color when polymerization is complete and that is a hydrogen donor that provides a rapid start for polymerization. Leuco dyes can be used such as those disclosed in aforementioned U.S.
Pat. No. 3,552,973 col. 6, line 6 to col. 11, line 9 which disclosure is hereby incorporated by reference. Typically useful dyes are alkyl amino-aromatic alkanes such as tris(diethylamino-o-tolyl) methane, tris(dimethylamino-o-oxylyl) methane and
tris(dipropyl amino-o-tolyl) methane.

The photopolymerizable resin used in the composition can be any type of resin that contains olefinic unsaturated groups that are photopolymerizable and that will form a polymer with good thermal, electrical and chemical properties. Polyamide
ester resins are particularly useful. These resins are prepared according to the aforementioned Rubner U.S. Patent Re. No. 30,186 wherein an aromatic polycarboxylic acid anhydride is esterified with a hydroxy alkyl acrylate or methacrylate which is
then reacted with diamine. Typical aromatic polycarboxylic acid anhydrides and diamines are disclosed in Edwards U.S. Pat. No. 3,179,614 issued Apr. 20, 1965 which disclosure is hereby incorporated by reference.

Typically useful polyamide ester resins have the following structure: ##STR1## where the.fwdarw.denotes isomerism, R is an aromatic radical, R.sup.1 is an organic radical containing a photo polymerizable olefinic double bond, R.sup.2 is an
aromatic, aliphatic or cycloaliphatic radical and n is a positive integer sufficiently large to provide the resin with a weight average molecular weight of about 5,000 to 75,000.

One particularly useful polyamide ester resin is the reaction product of pyromellitic dianhydride, hydroxy ethyl methacrylate and oxydianiline having a weight average molecular weight of about 15,000-60,000.

Typical solvents that can be used alone or in combination to dissolve the polymer and to dilute the composition to an application viscosity are N-methylpyrrolidone, butyrolactone, ethylene glycol monoethyl ether, dimethyl formamide, dimethyl
acetamide and hexamethylphosphoric acid triamide.

Blends of these solvents with a nonsolvent can be used as a developer solution to remove resin that was not exposed to radiation and not polymerized.

Typical developer solutions are 4-butyrolactone/toluene in a weight ratio from 2/1 to 1/4, dimethyl formamide/ethanol in a weight ratio from 2/1 to 1/4.

Plasticizers can also be added to the composition in amounts of 0.1-10% by weight, based on the weight of the resin. Typical plasticizers are tricresyl phosphate, dioctyl phthalate, dihexyl phthalate, dinonyl phthalate, polyethylene glycol
ethers, ethylene glycol dicaprolate.

In the process for applying the composition to substrates, the composition is applied and then dried to form a film at about 30.degree. to 100.degree. C. for about 20 minutes to 5 hours. The film is then exposed through a pattern for about 1
second to 5 minutes. Preferably, for commercial process exposure times of 1-60 seconds are required and usually an exposure time under 30 seconds is much preferred. Typical radiation sources used are ultraviolet lamps providing a wave length of 250 to
400 nanometers and an intensity of 0.5-60 milliwatts per square centimeter (mW/cm.sup.2). After exposure, the film is then dipped or sprayed, with a developer solution and washed with a nonsolvent and then dried. The film is cured to a polyimide relief
structure by baking at about 200.degree.-400.degree. C. for about 20 minutes to 4 hours. During curing all the acrylate components are decomposed leaving a polyimide structure which is formed. The resulting relief structure has a sharp definition,
good chemical, electrical and mechanical properties.

Typical uses for the composition are as follows: protective coatings for semi-conductors, dielectric layers for multilayer integrated circuits, high temperature solder mask, bonding multilayer circuits, a final passivating coating on electrical
devices and the like.

The following examples illustrate the invention. All parts and percentages are on a weight bases and molecular weights are determined by gel permeation chromatography.

EXAMPLE 1

______________________________________ Composition A Grams ______________________________________ Polyamide ester resin 10.00 (polymer of pyromellitic dianhydride and esterified with hydroxy ethyl methacrylate and reacted with
4,4'-oxydianiline and having a weight average molecular weight of about 25,000 prepared according to Example 2 of above U.S. Reissue Pat. No. 30,186) Bis(2-o-chlorophenyl-4,5-diphenylimidazolyl) 0.70 Michler's ketone (tetramethyl 0.25
diaminobenzophenone) Tris(diethylamino-o-tolyl)methane 0.25 Trimethylol propane polyethoxylate 2.0 triacrylate having a weight average molecular weight of about 1200 N-methylpyrrolidone 30.00 Total 43.20 ______________________________________

The above constituents are charged into a container and the container is placed on a roller and mixed for about 2 hours and then the resulting composition is filtered through a 1 micron filter.

A 2 inch diameter silicon wafer having a silicon dioxide coating is coated with an aminosilane adhesion promotor solution by a spin coating technique wherein the wafer is rotated at 3000 rpm for 30 seconds after the adhesion promotor solution is
applied. The wafer then is placed at 300.degree. C. for 10 minutes. The above prepared Composition A is reduced as follows: 10 parts Composition A to 1 part thinner (ethylene glycol monoethyl ether/n-methyl pyrrolidone--1/1 weight ratio) and the
reduced composition is applied by the above spin technique using 3000 rpm for 10 seconds. The composition is exposed to an infrared (IR) light during the spin application. The coating of Composition A is then dried for 2 hours at 55.degree. C. to
provide a film about 12,500 Angstroms thick. The coated wafer is placed in a contact printer having a 200 Watt ultraviolet light source of 356 nanometers (nm) and an intensity of about 5-6 mW/cm.sup.2 using a mask with lines spaced 4 microns apart and
exposed for 5 seconds. The wafer is then developed by dipping the wafer for 10 seconds in a 1/1 solution of 4-butyrolactone/toluene and then rinsed for 5 seconds with a spray of toluene to remove any unexposed composition. The wafer then is cured at
300.degree. C. for 1 hour to provide a relief structure about 4,500 Angstroms thick.

Additional silicon wafers are prepared using the above procedure except the following exposure times are used 10 seconds, 15 seconds, 20 seconds, 30 seconds, 45 seconds and 60 seconds. Exposure times of 10, 15 and 30 seconds result in clearly
defined images which are acceptable but longer exposure times of 30, 45 and 60 seconds result in poorer images due to over exposure.

Additional silicon wafers are prepared using the above identical procedure except the following developer compositions are used: 4-butyrolactone/toluene in the following weight ratio 1/1.2, 1/1.4 and 1/1.6. All developers were adequate and gave
an acceptable product.

Composition B which is representative of known compositions is prepared as follows:

The constituents are mixed together using the same procedure as above and a silicon wafer is coated with the above adhesion promotor and with Composition B using the above coating and drying procedures. The coated wafer then is exposed as above
(10, 15, 20, 30, 45 and 60 seconds) to the aforementioned light source and developed using 4-butyrolactone/toluene ratio 1/1 developer solution. The coating is then cured as above. An underexposed unacceptable relief structure is formed. Exposure time
to the light source had to be increased to 3.5 minutes before an acceptable image was formed.

The above constituents are mixed together using the same procedure as in Example 1 and the resulting composition is coated onto a silicon wafer primed with an adhesion promoter as described in Example 1 using the same coating and drying procedure
as in Example 1. The coated wafer then is exposed for 4.0 minutes to an ultraviolet light source of 1.1 mW/cm.sup.2, developed, rinsed and cured as in Example 1 to provide a coating with an excellent clear image.

Composition B of Example 1 is applied as above and exposed to the same light source for the same time, developed and cured as above. An underexposed unacceptable image is formed. Exposure times had to be increased to about 5-7 minutes to form
an acceptable image.

EXAMPLE 3

The following compositions are prepared by mixing the constituents as in Example 1:

The resulting compositions are each coated onto a silicon wafer primed as in Example 1 with an adhesion promoter using the coating and baking procedure of Example 1. Each of the coatings then are exposed for 1 minute using a 200 Watt light
source having a surface intensity of 1.1 mW/cm.sup.2 in the contact printer. Each of the coated wafers is developed in a 4-butyrolactone/toluene ratio of 1/3 developer solution for 20 seconds and rinsed for 10 seconds with toluene and cured as in
Example 1. All wafers have acceptable images. The wafer made with Composition D has the best and most clear image. The wafer made with Composition C has the next best image which is better than the wafers made with Compositions E and F. The image on
the wafer made with Composition F is slightly better than the image on the wafer made with Composition E.

Composition B of Example 1 is coated onto a silicon wafer primed as in Example 1 using the above procedure. A 1 minute exposure time gave an underexposed unacceptable image. Exposure times had to be increased to about 5-7 minutes to provide a
clear and distinct image on the wafer.