Abstract

With the increase in production volume of RF devices (e.g. for automotive applications), packaging and interconnection become more and more important. Furthermore, new system concepts such as chip-on-chip or RF- MEMS demand new packaging strategies. This paper presents a vertical silicon micromachined RF CPW through- wafer feedthrough with excellent performance in the K-band. In particular, the feedthrough demonstrates an insertion loss of 0.16dB and a return loss of 20dB at 25GHz. A lumped element model was developed and was evaluated with measurements.

Abstract

With the increase in production volume of RF devices (e.g. for automotive applications), packaging and interconnection become more and more important. Furthermore, new system concepts such as chip-on-chip or RF- MEMS demand new packaging strategies. This paper presents a vertical silicon micromachined RF CPW through- wafer feedthrough with excellent performance in the K-band. In particular, the feedthrough demonstrates an insertion loss of 0.16dB and a return loss of 20dB at 25GHz. A lumped element model was developed and was evaluated with measurements.