Abstract

Electron spin dynamics in intrinsic bulk indium phosphide(InP)semiconductor is studied by time resolved pump probe reflectivity technique using the cocircularly and countercircularly polarized femtosecond pulses at room temperature and 70 K. The reflectivity change from bleaching into absorption is observed with increasing pump photonenergy, which can be explained in terms of the spin sensitive band filling and band gap renormalization effects. Density dependence of electron spin relaxation time shows similar tendency at room temperature and 70 K. With increasing carrier density, the electron spin relaxation time increases and then decreases after reaching a maximum value. Our experimental results agree well with the recent theoretical prediction [Jiang and Wu, Phys. Rev. B79, 125206 (2009)] and D’yakonov–Perel’ mechanism is considered as a dominating contribution to the electron spin relaxation in intrinsic bulk InPsemiconductor.

Received 19 October 2010Accepted 02 December 2010Published online 18 January 2011

Acknowledgments:

This work is supported by National Natural Science Foundation of China (under Grant No. 10774099), the Program for Professor of a Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, and Science and Technology Commission of Shanghai Municipal (under Grant No. 09530501100). Part of the work is also supported by Shanghai Leading Academic Discipline Project (under Grant No. S30105).