Abstract

By a comparison between memristors made with aluminium and gold electrodes, this letter demonstrates that aluminium electrodes are an essential component of the TiO$_2$ sol-gel flexible memristor . Both slow varying `analogue' and sudden switching `digital' memristor devices have been observed. Limiting the oxygen exposure of the bottom aluminium electrode favours the creation of digital memristors over analogue ones. A straight-forward fabrication of drop-coated memristors based on sol-gel chemistry is also presented and these show similar behaviour and dependence on electrode material, making them useful as test memristors for experimentation.