Abstract

Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors(TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface and trap density at a back interface It is found that the H plasma treatment is apt to generate and The O plasma treatment reduces while the -vapor heat treatment reduces both and Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.