General-use ICP/RIE etch system. Independent control of plasma density using the ICP power (max 1000W) and substrate bias using the RIE power (max 500W). Can be used to etch materials selectively and faster than a simple RIE system.

Dries samples without surface tension distortions, by replacing liquid on sample with liquid CO2, then passing through CO2's supercritical region to change it from liquid to gas without crossing a phase boundary.

Flow hood for handling solvents, including acetone and alcohol. No corrosives are permitted at this bench. Two hotplates, DI sink, DI sprayer, and N2 blowoff gun. Users may request permission to heat solvents at this bench.