Abstract

A close relationship is found between the blue and yellow luminescence bands in -type GaNfilms, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.