A Physical Model of an SOI Field-Effect Hall Sensor

Abstract

Studies in the field of the development of new structures of Hall sensor with improved characteristics, in particular with increased magnetic sensitivity are in high demand. A physical model is proposed, which explains features of the Hall–hate characteristic and the formation of the increased magnetic sensitivity region in the SOI field-effect Hall sensor (SOI FEHS). The results of simulation in the Synopsys TCAD system confirm the proposed physical model of SOI FEHS functioning. The model explains features of the Hall–gate characteristic of the SOI FEHS in a wide range of gate voltages and allows the conclusion that the SOI FEHS has two operating regions and their choice is dictated by specific conditions of the sensor application. To achieve the maximum magnetic sensitivity, regions of partial depletion and enhancement should be chosen. To provide high noise immunity, it is reasonable to choose the full enhancement modes.