Please use this identifier to cite or link to this item:
http://eprint.iitd.ac.in/handle/2074/1592

Full metadata record

DC Field

Value

Language

dc.contributor.author

Gupta, P K

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dc.contributor.author

Chopra, K L

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dc.date.accessioned

2006-04-10T04:12:25Z

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dc.date.available

2006-04-10T04:12:25Z

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dc.date.issued

1988

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dc.identifier.citation

Electron Device Letters, IEEE, 9(1), 17 - 19

en

dc.identifier.uri

http://eprint.iitd.ac.in/dspace/handle/2074/1592

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dc.description.abstract

Lithographic properties of amorphous silicon films exposed to glow-discharge hydrogen plasma and ion beams have been investigated. The rate of film etching by a CF4 plasma is lowered by exposure, giving rise to a negative resist behavior of the material. The sensitivity and contrast are ~1018 ions/cm2 and 1.1, respectively. The effect of exposure time on etching characteristics was also studied