Abstract:GaInAs and AlInAs structures have been grown on on-axis and misoriented [4°-(111) In-plane] (110) InP substrates. In general, the growth on the on-axis substrates shows a high density of defects; while the surface morphology using misoriented substrates is smooth. A smooth morphology is obtained on on-axis (110) InP, however, with a low substrate temperature and high V/III ratio. The photoluminescence properties of the individual alloys grown on (110) show high intensities, similar to that which can be obtained on (100) substrates, but the peaks are significantly broadened and shifted in energy. The interface quality of the GaInAs-AlInAs (110) heterojunction, inferred from the linewidths of quantum well emissions, is improved by growing at higher temperature