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Abstract

As a saturable absorption material, the heterostructure with the van der Waals structure has been paid much attention in material science. In general, the heterogeneous combination is able to neutralize, or even exceed, the individual material’s advantages in some aspects. In this paper, which describes the magnetron sputtering deposition method, the tapered fiber is coated by the MoS2-WS2 heterostructure, and the MoS2-WS2 heterostructure saturable absorber (SA) is fabricated. The modulation depth of the prepared MoS2-WS2 heterostructure SA is measured to be 19.12%. Besides, the theoretical calculations for the band gap and carrier mobility of the MoS2-WS2 heterostructure are provided. By employing the prepared SA, a stable and passively erbium-doped fiber laser is implemented. The generated pulse duration of 154 fs is certified to be the shortest among all fiber lasers based on transition mental dichalcogenides. Results in this paper provide the new direction for the fabrication of ultrafast photon modulation devices.

Figures (6)

Fig. 1 Atomic and electronic structure of the MoS2-WS2 heterostructure. (a) Top and side views of the MoS2-WS2 heterostructure, the dashed rectangle denotes the primitive cell. (b), (c) and (d) are band structures of MoS2-WS2 heterostructure, monolayer MoS2 and monolayer WS2, respectively. Here, the fermi level is set to be zero, and the orange line denotes valence-band maximum for the holes and conduction-band minimum for the electrons. Besides, red points project the contribution from the MoS2 in (b). (e) is the band alignment of the MoS2-WS2 heterostructure. The energy levels of MoS2 and monolayer WS2 slabs are shown in both sides. Here, the monolayer MoS2, monolayer WS2, and MoS2-WS2 heterostructure are considered.