They are fine technologies; the materials they use are very particular, must be processed and operated in particular ways. There is therefore a natural division between companies who have already invested in these materials (so need to continue their development and in some cases already offer products) and those who haven't (so will be reluctant).

The company I work for builds industrial equipment with a long life cycle. Our products are expected to remain in operation for 10 years or more. Our producta are also specified to operate over the industrial temperature range (-45C to +85C)

How do MRAM, PCM and ReRAM compare for replacing Flash this type of use? We've noticed that as the processes shrink, Flash is becoming less reliable. In addition, most vendors appear to be chasing the commercial market with higher densities and lower reliability.

The growth of the non-volatile memory market was expected because the MRAM nonvolatile memory technologies provide better results and are cheaper. My nephew had the opportunity to try the new ferroelectric RAM`s and he was very pleased with them, he even called the Innovia CMC specialists to ask if it is worthy to invest in this.

@MikeSmith2011
It is also interesting that Yole bracketed PCM and MRAM together to indicate a market size they think the two technologies together could reach but saying nothing about each one.
By 2016 it could be MRAM 100 percent and PCM 0% or vice versa.
Almost certainly the absolute number will br wrong and the perentages somewhere between the two extremes I've outlined.

PCM was easier to sell against the field-driven MRAM that Everspin or Crocus made, since it could scale better. But now it could have a more difficult time against the new STT type MRAM. But a big difference is the MRAM resistance is becoming negligible or at least smaller compared to the transistor itself, which can be 20 K-ohm or more. Any resistance-based memory therefore cannot have a minimum resistance less than say 30 K-ohm, and equivalently, maximum current cannot exceed say 40 uA. The first condition is harder for MRAM, the second harder for PCM.

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