Refractive index data for MoO3 added to the RI library. Thanks to Luis Guillermo Gerling (UPC) for forwarding the reference.

14 Apr 2015

A bug in the wafer ray tracer was corrected. Until now, if a rear reflector was added, assigned as Lambertian, and removed, the reflection distribution of the rear surface would be incorrectly treated as Lambertian instead of specular. Thanks Tim Frijnts (Helmholtz Berlin) for reporting this bug.

Fixed a bug in the sheet resistance calculator in which the temperature was treated as Kelvin irrespective of whether the units were selected to be celcius or Kelvin. Thanks to the anonymous user for reporting the bug.

23 Mar 2015

Version 6.1 of PC1Dmod released by Halvard Haug (IFE). It contains more physical models and is embedded in the traditional PC1D user interface.

17 Mar 2015

A bug in the wafer ray tracer was corrected. Before now, a ray that intersected an inverted pyramid on the rear would escape without attributing its intensity to a loss mechanism. Thanks Steven Limpert (ASU) for spotting the bug.

The option to use Schindler's mobility model was added to most semiconductor calculators.

9 Mar 2015

Griddler 2.0 released for Windows. Griddler 2.0 provides a fast and sophisticated way to simulate a full-area solar cell with any metalisation pattern.

3 Mar 2015

New version of Quokka 2 released (ver 2.2.4). It contains additional options for optical models and minor bug fixes. See Quokka 2 change log for details.

16 Feb 2015

Table in the Output Data tab of the mobility calculator fixed so that it is updated after changes to the inputs on the Calcultor tab.

2 Feb 2015

Ben Sudbury joins PV Lighthouse to take care of business development.

30 Jan 2015

Maximum number of busbars in the grid calculator increased from 10 to 100. A higher number of busbars increases the time required to generate the grid image. That problem can be circumvented by hiding the image.

A bug in the wafer ray tracer that occurred for non-normally incident illumination was corrected. Before now, the spectral outputs (but not the integrated outputs) neglected a 1/cos(θ) dependence on the incident angle.

EDNA 2 is released as an online calculator. EDNA 2 simulates the behaviour of a region of heavily doped silicon, such as an emitter or a back-surface field. It can be used to determine the J0E of an arbitrarily doped emitter.

18 Jun 2013

PV Lighthouse's Mal Abbott presents a paper at the IEEE's 39th PV conference in Tampa. The paper, a collaboration with Dupont, evaluates the recombination losses in industrial phosphorus emitters.