Abstract

Lasing action on a third order waveguide mode is demonstrated at room temperature under optical pumping, in a specifically designed quantum well laser structure. The AlGaAsheterostructure involves barriers which ensure that the third order waveguide mode has a higher overlap with the single quantum well emitter than the fundamental mode. Third order mode operation of a laser structure opens the way to modal phase matched parametric down conversion inside the semiconductor laser itself. It is a first step towards the realization of semiconductor twin photon laser sources, needed for quantum information experiments.