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1 High voltage high and low-side driver Description Datasheet - production data Features High voltage rail up to 600 V dv/dt immunity ± 50 V/nsec in full temperature range Driver current capability: 400 ma source 650 ma sink Switching times 50/30 nsec rise/fall with 1 nf load CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down Undervoltage lockout on lower and upper driving section Internal bootstrap diode Outputs in phase with inputs Applications Home appliances Induction heating HVAC DIP-8 Motor drivers SR motors DC, AC, PMDC and PMAC motors Asymmetrical half-bridge topologies Industrial applications and drives Lighting applications Factory automation Power supply systems SO-8 The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD offline technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 ma and 400 ma respectively and can be simultaneously driven high. The L6385E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution. The L6385E features the UVLO protection on both lower and upper driving sections (V CC and V boot ), ensuring greater protection against voltage drops on the supply lines. The device is available in a DIP-8 tube and SO-8 tube, and tape and reel packaging options. Table 1. Device summary Part number Package Packaging L6385E DIP-8 Tube L6385ED SO-8 Tube L6385ED013TR SO-8 Tape and reel December 2014 DocID13863 Rev 3 1/15 This is information on a product in full production.

8 Bootstrap driver L6385E 5 Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6385E device a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low-side driver (LVG), with a diode in series, as shown in Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage. The diode connected in series to the DMOS has been added to avoid undesirable turn-on. C BOOT selection and charging To choose the proper C BOOT value, the external MOS can be seen as an equivalent capacitor. This capacitor C EXT is related to the MOS total gate charge: Equation 1 C EXT = Q gate V gate The ratio between the capacitors C EXT and C BOOT is proportional to the cyclical voltage loss. It has to be: C BOOT >>>C EXT E.g.: if Q gate is 30nC and V gate is 10V, C EXT is 3nF. With C BOOT = 100nF the drop would be 300 mv. If HVG has to be supplied for a long time, the C BOOT selection has to take into account also the leakage losses. E.g.: HVG steady state consumption is lower than 200 A, so if HVG T ON is 5 ms, C BOOT has to supply a maximum of 1 µc to C EXT. This charge on a 1mF capacitor means a voltage drop of 1 V. The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually has a great leakage current). This structure can work only if V OUT is close to GND (or lower) and in the meanwhile the LVG is on. The charging time (T charge ) of the C BOOT is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor. The bootstrap driver introduces a voltage drop due to the DMOS R DSON (typical value: 125 ). At low frequency this drop can be neglected. Anyway increasing the frequency it must be taken in to account. The following equation is useful to compute the drop on the bootstrap DMOS: Equation 2 Q gate V drop = I charge R dson V drop = R dson T charge where Q gate is the gate charge of the external power MOS, R dson is the on resistance of the bootstrap DMOS, and T charge is the charging time of the bootstrap capacitor. 8/15 DocID13863 Rev 3

9 Bootstrap driver For example: using a power MOS with a total gate charge of 30 nc the drop on the bootstrap DMOS is about 1 V, if the T charge is 5 ms. In fact: Equation 3 V drop = 30nC V 5s V drop has to be taken into account when the voltage drop on C BOOT is calculated: if this drop is too high, or the circuit topology doesn t allow a sufficient charging time, an external diode can be used. Figure 4. Bootstrap driver D BOOT V S V BOOT V S V BOOT H.V. H.V. HVG C BOOT HVG C BOOT V OUT V OUT TO LOAD TO LOAD LVG LVG a b D99IN1056 DocID13863 Rev 3 9/15 15

15 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID13863 Rev 3 15/15 15

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