Answer: Static RAM: No refreshing, 6 to 8 MOS transistors are required to form one memory cell, Information stored as voltage level in a flip flop. Dynamic RAM: Refreshed periodically, 3 to 4 transistors are required to form one memory cell, Information is stored as a charge in the gate to substrate capacitance.

Static RAM: No refreshing, 6 to 8 MOS transistors are required to form one memory cell, Information stored as voltage level in a flip flop. Dynamic RAM: Refreshed periodically, 3 to 4 transistors are required to form one memory cell, Information is stored as a charge in the gate to substrate capacitance.

Static RAM: No refreshing, 6 to 8 MOS transistors are required to form one memory cell, Information stored as voltage level in a flip flop. Dynamic RAM: Refreshed periodically, 3 to 4 transistors are required to form one memory cell, Information is stored as a charge in the gate to substrate capacitance.

Static RAM: No refreshing, 6 to 8 MOS transistors are required to form one memory cell, Information stored as voltage level in a flip flop. Dynamic RAM: Refreshed periodically, 3 to 4 transistors are required to form one memory cell, Information is stored as a charge in the gate to substrate capacitance. Source: CoolInterview.com

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