Pulsed laser irradiation (193 nm, t=14 ns) at low fluence (0.045 J/cm2) of GaAs 18O enriched native oxides leads to a very efficient oxygen exchange between 18O in the oxides and 16O coming from the surrounding atmosphere. 1000 laser pulses caused a complete exchange of oxygen from an oxide layer of âˆ¼30-nm thickness. This showed a very high rate of oxygen self-diffusion under laser irradiation although the total oxygen content in the oxide was preserved. As this process is believed to have a threshold fluence, a model based on the hole-pair mechanism of Itoh and Nakayama [Phys. Lett. A 92, 471 (1982)] is suggested. Preferential loss of As and preferential oxidation of Ga are also observed to some extent.

We experimentally demonstrated enhanced spontaneous and stimulated emission of GaAs/AlGaAs nanowire via the Purcell effect. By integrating the NW and SiO2-Au substrate, the hybridization of the dielectric modes in the NW with surface plasmons on the surface of Au formed hybrid plasmonic modes....

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation...

Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement structures are reported. Using atomic layer deposition, the current confinement structures are fabricated by depositing Al2O3 on airgap surfaces of undercut apertures, which are formed by laterally etching the active region....

Experimental data on the nano- and microsecond pulsed laser radiation (Î» = 1.315 Âµm) confinement in compensated GaAs are reported. There are three regions of confinement, which are controlled by radiation self-defocusing due to single-photon absorption by deep impurity levels,...

Discusses how scientists from Orsay, France described the room-temperature operation of a gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) quantum cascade (QC) laser. Advantages of GaAs-based QC lasers; Ways by which the temperature dependence of GaAs-based lasers was improved;...