Abstract

Diffusion of germanium(Ge) and arsenic (As) has been investigated simultaneously using As-implanted Geisotopesuperlattices. No transient enhanced diffusion of As that could have arisen by the implantation damage is observed. A quadratic dependence of the Geself-diffusion on the carrier concentration due to the Fermi level effect is observed. A precise reproduction of the Ge and As diffusion profiles by a numerical simulator lets us conclude that doubly negatively charged vacancies are the dominant point defects responsible for more than 95% of the self-diffusion in intrinsic Ge and this fraction increases even further in -type Ge.

Received 10 October 2008Accepted 23 October 2008Published online 11 November 2008

Acknowledgments:

This work has been supported in part by the Research Program on Collaborative Development of Innovative Seeds by JST, in part by Special Coordination Funds for Promoting Science and Technology for INQIE, and in part by Keio Global COE Program.