Abstract

Power transistor applications require alternative gate dielectrics on SiC that can operate at high fields without breaking down, as well as provide a high quality interface in order to minimize mobility degradation due to interface roughness. We have grownepitaxial MgO (111) crystalline layers on (0001) substrates and characterized their structural and electrical properties. Measurements of gate leakage, breakdown fields, and dielectric properties make epitaxial MgO a potential candidate gate dielectric for SiC-based transistors.

Received 04 April 2008Accepted 22 May 2008Published online 13 June 2008

Acknowledgments:

Work at Yale is supported by NSF MRSEC DMR 0520495, NSF DMR 0705799, ONR, and the Packard and Sloan Foundations. Work at Northeastern is supported by the Office of Naval Research (Dr. Colin Wood) under the “Epitaxial Multifunctional Materials with Applications” MURI Program.