CONDUCTIVE POLYMER FOR SOLID ELECTROLYTE CAPACITOR - [Problem] To provide a conductive polymer for solid electrolyte capacitor having outstanding solubility in solvents or dispersibility in solvents and which can produce a capacitor having outstanding capacitor characteristics in high-temperature environments.

2014-01-16

20140014882

FULLERENE DERIVATIVE AND PHOTOELECTRIC CONVERSION DEVICE USING SAME - The present invention provides a fullerene derivative having an electron donating group adjacent to the fullerene nucleus, represented by formula (I) which exhibits a high LUMO energy and a high open circuit voltage based thereon and which is highly compatible with polymers and excellent in charge mobility and charge separation ability:

ORGANIC IONIC FUNCTIONAL MATERIALS - The present invention relates to a novel non-polymeric organic ionic compound comprising one ion having a functional organic group, such as a matrix group, a hole injection group, a hole transport group, an electron injection group and an electron transport group, and comprising another ion preferably being so small that it may act as a mobile ion in films containing the organic ionic compound. Furthermore, the present invention relates to a composition containing the novel organic ionic compound and another functional compound. The novel organic ionic compound or the composition may be used in organic devices as functional materials, such as matrix materials or for materials charge transport. The resulting organic devices are also object of the present invention.

2014-01-16

20140014886

LIFT TABLE CONTROL - According to the invention, a scissor lift table is hereby proposed having a base unit and a carrier unit adjustable relative to the base unit by means of a scissor unit provided with a drive unit. A safety device of the scissor lift table comprises a monitoring element, which registers parameters of a motor, and a safety element, which processes safety-related signals. The safety device additionally comprises a drive control and a drive brake, wherein the drive control acts on the drive brake in the event of a disruption.

Thermally-Confined Spacer PCM Cells - A memory device includes an array of contacts and a patterned insulating layer over the array of contacts. The patterned insulating layer includes a trench. The trench includes a sidewall aligned over a plurality of contacts in the array. A plurality of bottom electrodes on a lower portion of the sidewall contacts respective top surfaces of the contacts in the plurality of contacts. A thermally confined spacer of memory material between the patterned insulating layer and an insulating fill material is formed on an upper portion of the sidewall in contact with the plurality of bottom electrodes.

2014-01-16

20140014889

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating layers and the second insulating layer of the plurality of second layers.

2014-01-16

20140014890

CONDUCTIVE PATH IN SWITCHING MATERIAL IN A RESISTIVE RANDOM ACCESS MEMORY DEVICE AND CONTROL - A non-volatile memory device structure. The device structure includes a first electrode, a second electrode, a resistive switching material comprising an amorphous silicon material overlying the first electrode, and a thickness of dielectric material having a thickness ranging from 5 nm to 10 nm disposed between the second electrode and the resistive switching layer. The thickness of dielectric material is configured to electrically breakdown in a region upon application of an electroforming voltage to the second electrode. The electrical breakdown allows for a metal region having a dimension of less than about 10 nm by 10 nm to form in a portion of the resistive switching material.

2014-01-16

20140014891

DUAL-PLANE MEMORY ARRAY - A memory array has a plurality of conductor structures. Each conductor structure has a top wire segment extending in a first direction, a middle wire segment extending in a second direction at an angle from the first direction, a bottom wire segment extending in a direction opposite to the first direction, and a via connecting the top, middle, and bottom wire segments. A plurality of memory cells in an upper plane of the memory array are formed at intersections of the middle wire segment of each conductor structure with the top wire segments of neighboring conductor structures, and a plurality of memory cells in a lower plane are formed at intersections of the middle wire segment of each conductor structure with the bottom wire segments of neighboring conductor structures.

2014-01-16

20140014892

Resistive-Switching Memory Element - A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.

2014-01-16

20140014893

ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICE - A two-terminal memory cell including a Schottky metal-semiconductor contact as a selection device (SD) allows selection of two-terminal cross-point memory array operating voltages that eliminate “half-select leakage current” problems present when other types of non-ohmic devices are used. The SD structure can comprise a “metal/oxide semiconductor/metal” or a “metal/lightly-doped single layer polycrystalline silicon.” The memory cell can include a two-terminal memory element including at least one conductive oxide layer (e.g., a conductive metal oxide—CMO, such as a perovskite or a conductive binary oxide) and an electronically insulating layer (e.g., yttria-stabilized zirconia—YSZ) in contact with the CMO. The SD can be included in the memory cell and configured electrically in series with the memory element. The memory cell can be positioned in a two-terminal cross-point array between a pair of conductive array lines (e.g., a bit line and a word line) across which voltages for data operations are applied.

2014-01-16

20140014894

HIGH PERFORMANCE LIGHT EMITTING DIODE WITH VIAS - High performance light emitting diode with vias. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a plurality of filled vias configured to connect a doped region on one side of the light emitting diode to a plurality of contacts on the other side of the light emitting diode. The filled vias may comprise less that 10% of a surface area of the light emitting diode.

2014-01-16

20140014895

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - According to one embodiment, a nitride-semiconductor light-emitting element includes a laminated body, a pair of two transparent conductive layers, a current-blocking layer, a first electrode, and a second electrode. The laminated body includes a nitride semiconductor, a first layer including a first conductivity-type layer, a second layer including a second conductivity-type layer, and a light-emitting layer sandwiched between the first layer and the second layer. The two transparent conductive layers are laterally separated from each other by a prescribed region. The prescribed region is a portion of a surface of the first layer. The current-blocking layer covers respective surfaces of the two transparent conductive layers.

2014-01-16

20140014896

LIGHT EMITTING DIODE DEVICE USING CHARGE ACCUMULATION AND METHOD OF MANUFACTURING THE SAME - A light emitting device using charge accumulation and a method of manufacturing the light emitting device are provided. The light emitting device includes a substrate, a first electrode formed on the substrate, a hole transport layer formed on the first electrode, an electron transport layer formed on the hole transport layer, and a second electrode formed on the electron transport layer. A thickness of the hole transport layer may be greater than 20 nm and a thickness of the electron transport layer may be greater than 40 nm. A quantum dot (QD) layer may be disposed between the hole transport layer and the electron transport layer.

2014-01-16

20140014897

SEMICONDUCTOR LIGHT EMITTING DEVICE WITH DOPED BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer.

2014-01-16

20140014898

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the active layer. The intermediate refraction layer is disposed on the first conductive type semiconductor layer. The intermediate refraction layer has a refractivity that is smaller than that of the first conductive type semiconductor layer and is greater than that of air.

2014-01-16

20140014899

MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE HAVING THE SAME - A multi-quantum well structure includes two first barrier layers, two well layers sandwiched between the two first barrier layers, and a doped second barrier layer sandwiched between the two well layers. The second barrier layer has its conduction band and forbidden band gradually transiting to those of one of the well layers, and a dopant concentration of the second barrier layer gradually changes along a direction from one well layer to the other. The invention also relates to a light emitting diode structure having the multi-quantum well structure.

2014-01-16

20140014900

LIGHT EMITTING SOURCE AND METHOD FOR EMITTING LIGHT BASED ON BORON NITRIDE NANOTUBES - The present invention relates to a source for emitting broad spectrum light of controllable frequency comprising boron nitride nanotubes with defects caused by the vacancy of a boron atom in the tubular structure and wherein the source is further provided with means for producing an electric field perpendicular to the tube. The invention can be used as a field-effect transistor (by adding electrodes) or as a source for converting energy of an incoming beam.

2014-01-16

20140014901

LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer and a third semiconductor stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.

2014-01-16

20140014902

Photodiode and Method for Making the Same - A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer.

2014-01-16

20140014903

VERTICAL TUNNELING NEGATIVE DIFFERENTIAL RESISTANCE DEVICES - The present disclosure relates to the fabrication of microelectronic devices having at least one negative differential resistance device formed therein. In at least one embodiment, the negative differential resistance devices may be formed utilizing quantum wells. Embodiments of negative differential resistance devices of present description may achieve high peak drive current to enable high performance and a high peak-to-valley current ratio to enable low power dissipation and noise margins, which allows for their use in logic and/or memory integrated circuitry.

2014-01-16

20140014904

Replacement Contacts for All-Around Contacts - In one aspect, a FET device is provided. The FET device includes a substrate; a semiconductor material on the substrate; at least one gate on the substrate surrounding a portion of the semiconductor material that serves as a channel region of the device, wherein portions of the semiconductor material extending out from the gate serve as source and drain regions of the device, and wherein the source and drain regions of the device are displaced from the substrate; a planarizing dielectric on the device covering the gate and the semiconductor material; and contacts which extend through the planarizing dielectric and surround the source and drain regions of the device.

2014-01-16

20140014905

FIELD EFFECT TRANSISTOR USING GRAPHENE - According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

2014-01-16

20140014906

ORGANIC LIGHT-EMITTING DIODE STRUCTURE AND DISPLAY DEVICE THEREOF - The present invention is provided an organic light emitting diode structure and display device therefor, wherein an organic light emitting diode comprises a transparent substrate; and multi-rowed and multi-columned light emitting pixel units formed on the transparent substrate, which comprising a plurality of light emitting pixels. The organic light emitting diode also comprises ultraviolet light emitting pixels for emitting ultraviolet light. The present invention is caused the OLED display device to carry out colorful display and also can use to be ultraviolet light.

2014-01-16

20140014907

DISPLAY APPARATUS AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A display apparatus includes a plurality of first wirings extending in a first direction and a plurality of second wirings extending in a second direction crossing the first direction. Differing first identification patterns are present on the plurality of corresponding first wirings to identify the plurality of first wirings, and differing second identification patterns are present on the plurality of corresponding second wirings to identify the plurality of second wirings.

2014-01-16

20140014908

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a substrate including a display area, an encapsulation member facing the substrate, a pad unit around the display area of the substrate, the pad unit including a contact area and an exposure area that is spaced apart from the contact area, and a flexible printed circuit (FPC) that is connected to the contact area of the pad unit and is curved towards the encapsulation member.

2014-01-16

20140014909

ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes: a substrate; a pixel electrode disposed on the substrate; an intermediate layer that is disposed on the pixel electrode and includes an organic light-emitting layer; a facing electrode disposed on the intermediate layer; and a thin film encapsulating layer disposed on the facing electrode, wherein the thin film encapsulating layer includes: a first inorganic film and a second inorganic film, which are disposed on the facing electrode; a first organic film that is disposed between the first inorganic film and the second inorganic film and has a first thickness; and a second organic film that is disposed on the second inorganic film and has a second thickness greater than the first thickness.

2014-01-16

20140014910

ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus is provided. The organic light-emitting display apparatus includes: a pixel electrode for reflecting incident light and located on a substrate including a thin film transistor (TFT), and electrically connected to the TFT; an organic layer on the pixel electrode and including an emission layer; and an opposite electrode on the organic layer and including a resonant region for forming a resonant structure with the pixel electrode by reflecting light emitted from the emission layer, and a non-resonant region that is a region other than the resonant region.

2014-01-16

20140014911

LED PHOSPHOR AND FABRICATING METHOD THEREOF - The present invention relates to a LED (light-emitting diode) phosphor and fabricating method thereof, and particularly relates to a LED phosphor having a light-emitting thin film (or photoluminescence thin film) made of an organic material and a zinc oxide microstructure (or nanostructure) and a method for fabricating the LED phosphor by hydrothermal method and combination of the organic material and the zinc oxide microstructure (or nanostructure). In this invention, the light-emitting thin film (or photoluminescence thin film) made of the organic material and the zinc oxide microstructure (or nanostructure) is applied instead of rare earth elements to fabricate the LED phosphor. Therefore, the cost of the LED phosphor and the white LED can be reduced and the processes for fabricating the LED phosphor and the white LED can be simplified.

2014-01-16

20140014912

PIXEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING THE SAME - A pixel of an organic light emitting display device includes a transistor configured to output a first source voltage, an organic light emitting diode coupled to the transistor, and a wiring configured to be applied with a reference voltage to ground a leakage current of the transistor. The organic light emitting diode includes a first electrode configured to receive the first source voltage, a first common layer on the first electrode, an organic light emitting layer on the first common layer, and a second electrode on the organic light emitting layer and configured to be applied with a second source voltage different from the first source voltage. The first common layer is coupled to the wiring.

ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a substrate, a first electrode on the substrate, a particle located between the substrate and the first electrode, an insulation pattern that is on the first electrode and that corresponds to the particle, an intermediate layer that is on the insulation pattern and that is electrically connected to the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

2014-01-16

20140014915

DUAL MODE DISPLAY DEVICES AND METHODS OF MANUFACTURING THE SAME - Disclosed are dual mode display devices and methods of manufacturing the same. The dual mode display device may include a first substrate, a first electrode on the first substrate, a second substrate opposite to the first electrode and the first substrate, a second electrode between the second substrate and the first electrode, a third electrode between the first electrode and the second electrode, an optic switching layer between the first electrode and the third electrode, and an organic light-emitting layer between the second electrode and the third electrode.

FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A flat panel display device includes: a substrate; an insulating layer having first, second, and third openings; a plurality of first lines on the insulating layer overlapped with the first openings, extending in a first direction, and including a first organic light-emitting layer; a plurality of second lines on the insulating layer overlapped with the second openings, extending in the first direction, and including a second organic light-emitting layer that is different from the first organic light-emitting layer; and a plurality of third lines on the insulating layer overlapped with the third openings, extending in the first direction, and including a third organic light-emitting layer that is different from the first and second organic light-emitting layers. Adjacent first and second lines are partially overlapped with each other, and the first, second, and third lines are not overlapped with the openings overlapped with other ones of the lines.

ORGANIC LAYER DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE SAME, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED BY THE METHOD - An organic layer deposition apparatus includes: a conveyer unit including a transfer unit for attaching a substrate, a first conveyer unit, and a second conveyer unit; and a deposition unit including a vacuum chamber and an organic layer deposition assembly for depositing an organic layer on the substrate. The organic layer deposition assembly includes: a deposition source for discharging a deposition material; a deposition source nozzle unit including a plurality of deposition source nozzles; a patterning slit sheet including a plurality of patterning slits that are arranged in a first direction; and a deposition source shutter that moves in the first direction, and selectively blocks the deposition material that is vaporized in the deposition source. The transfer unit moves between the first and second conveyer units. The transfer unit keeps the attached substrate spaced apart from the organic layer deposition assembly while being transferred by the first conveyer unit.

SUBSTRATE FOR AN ORGANIC ELECTRONIC DEVICE AND AN ORGANIC ELECTRONIC DEVICE COMPRISING THE SAME - A substrate including a base substrate; a scattering layer which is formed on the base substrate, includes a binder and scattering particles for scattering light, and has an uneven structure formed on a surface thereof opposite the base substrate; and a planarizing layer which is formed on the scattering layer and has a flat surface formed thereon, is provided. Here, the refractive index Na of the scattering particles and the refractive index Nb of the planarizing layer satisfy the expression |Na−Nb|≧0.3, an organic electronic device including the substrate, and a method of manufacturing the same are provided. Light-extraction efficiency can be improved and the manufacturing process can be simplified without degrading device performance.

2014-01-16

20140014924

ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING OF THE SAME - An organic light emitting display apparatus includes: a substrate; an insulation layer on the substrate and including first regions that are arranged along a first direction and second regions that are adjacent to the first regions and are arranged along the first direction; first lines on the insulation layer to cover the first regions and including first organic light-emitting layers; and second lines on the insulation layer to cover the second regions and including second organic light-emitting layers different from the first organic light-emitting layers. A portion of the first regions and a portion of the second regions facing each other are not parallel to the first direction.

ORGANIC LIGHT EMITTING DIODE, AND PANEL AND DISPLAY USING THE SAME - An organic light emitting diode, and a panel and a display using the same are disclosed. The organic light emitting diode of the present invention comprises: a reflecting layer; a resonance enhancing layer disposed on the reflecting layer; a first electrode disposed on the resonance enhancing layer, wherein the resonance enhancing layer is disposed between the reflecting layer and the first electrode; an organic layer disposed on the first electrode; and a second electrode disposed on the organic layer, wherein the organic layer is disposed between the first electrode and the second electrode.

2014-01-16

20140014927

ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device including a first electrode, a second electrode facing the first electrode, and an organic layer between the first electrode and the second electrode, wherein the organic layer includes an electron transport layer (ETL), and the electron transport layer (ETL) includes a compound represented by the following Chemical Formula 1 and an alkali metal complex.

2014-01-16

20140014928

ORGANIC EL ELEMENT, RADIATION-SENSITIVE RESIN COMPOSITION, AND CURED FILM - The organic EL display element is constituted by having a substrate, a TFT disposed on the substrate, a protective film covering the TFT, an anode disposed on the protective film, an organic luminescent layer disposed on the anode, a bank that defines an arranging area for the organic luminescent layer, and a cathode disposed on the organic luminescent layer. At least one of the protective film and bank is constituted as a cured film that is formed by using a radiation-sensitive resin composition containing a resin and a compound having a quinonediazide structure, contains a resin and at least one of a compound having a quinonediazide structure and a compound having an indenecarboxylic acid structure, and has an excellent patterning property.

Organic Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A novel organic compound with which the emission characteristics, emission efficiency, and reliability of a light-emitting element can be improved is provided. The organic compound has an imidazo[1,2-f]phenanthridine skeleton and a dibenzothiophene skeleton or a dibenzofuran skeleton bonded through an arylene group. The light-emitting element including the organic compound in a light-emitting layer shows high efficiency and low power consumption.

2014-01-16

20140014931

RADIATION-EMITTING ORGANIC-ELECTRONIC DEVICE AND METHOD FOR THE PRODUCTION THEREOF - A process of producing a radiation-emitting organic-electronic device having a first and a second electrode layer and an emitter layer includes: A) providing a phosphorescent emitter with an anisotropic molecule structure and a matrix material, B) applying the first electrode layer to a substrate, C) applying the emitter layer under thermodynamic control, with vaporization of the phosphorescent emitter and of the matrix material under reduced pressure and deposition thereof on the first electrode layer such that molecules of the phosphorescent emitter are in anisotropic alignment, and D) applying the second electrode layer on the emitter layer.

ORGANIC ELECTROLUMINESCENT ELEMENT AND LIGHTING FIXTURE - The objective of the present invention is to propose an organic electroluminescent element capable of realizing lighting with which a person feels comfortable irrespective of change in luminance of emitted light. The organic electroluminescent element according to the present invention is constituted by a plurality of layers stacked. The organic electroluminescent element has such characteristics that, in a range of 100 cd/m

2014-01-16

20140014934

ORGANIC THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC THIN-FILM TRANSISTOR - A transistor manufacturing method includes: forming a gate electrode above a substrate; forming a gate insulator above the gate electrode; forming source and drain electrodes above the gate insulator; forming a sacrificial layer above the source and drain electrodes; forming a partition wall layer above the sacrificial layer; forming an opening by patterning the partition wall layer to partly expose the sacrificial layer; removing the sacrificial layer to expose the source and drain electrodes; and forming an organic semiconductor layer to cover the source and drain electrodes and the gate insulator, wherein the source and drain electrodes occupy 50% or more of a surface area of the opening, and the source and drain electrodes are spaced apart at an interval smaller than an average granular diameter of crystals each of which is at least partly positioned above the source or drain electrode.

ORGANIC THIN FILM AND ORGANIC ELECTROLUMINESCENT ELEMENT CONTAINING SAME IN LIGHT-EMITTING LAYER - In an organic thin film (a light emitting layer) of an organic EL element, an organic thin film having an emitting material which is made up of an organic polymer main backbone polymerized with a molecular chain, which emits light having a maximum value at a wavelength different from a wavelength at which an emission spectrum emitted by the main backbone itself has a maximum value, and nanosized particles which are mixed into the emitting material is used as the light emitting layer. According to the above configuration, the maximum values of the emission spectra of light emitted by the molecular chain and the main backbone of the emitting material can be increased. Moreover, the light which has the emission spectra having the plural maximum values can be generated without depending on the plural emitting materials, so that the light emitting layer can be manufactured easily.

2014-01-16

20140014937

ORGANIC ELECTROLUMINESCENT ELEMENT - Provided is an organic electroluminescent element superior in long-term durability and lifetime characteristics. The organic electroluminescent element has a structure where plurality of light-emitting layers formed via an intermediate layer are interposed between a positive electrode and a negative electrode. The intermediate layer has a mixed layer, a first layer, and a hole-injection layer which are formed in this order from the positive electrode to the negative electrode, the mixed layer containing an electron-donating substance and an electron-transporting organic material, and the first layer being made of an electron-transporting material. The first layer has a thickness in a range of 0.2 to 2.0 nm. The hole-injection layer consists of an electro-accepting organic material.

2014-01-16

20140014938

LIGHT-EMITTING ELEMENT AND ILLUMINATING APPARATUS - A light-emitting device comprising: an organic electroluminescence element that has a light-emitting surface and emits light from the light-emitting surface; and a structure layer that is provided directly or indirectly on the light-emitting surface of the organic electroluminescence element, wherein the structure layer has a concavo-convex structure on a surface of the structure layer, the surface being opposite to the organic electroluminescence element, the concavo-convex structure including a first streak array extending in a first direction that is parallel to the surface, a second streak array extending in a second direction that is parallel to the surface and intersects the first direction, and a third streak array extending in a third direction that is parallel to the surface and intersects the first direction and the second direction, the concavo-convex structure includes flat surface portions parallel to the light-emitting surface and an inclined surface portion that is inclined with respect to the light-emitting surface, and a projected area formed by projecting the inclined surface portion upon a plane parallel to the flat surface portions in a direction perpendicular to the flat surface portions is 0.1 times or less times a total area of the flat surface portions.

2014-01-16

20140014939

ORGANIC EL LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREFOR, AND ORGANIC EL ILLUMINATION DEVICE - An organic EL light emitting device includes a transparent substrate, a transparent electrode film formed on the substrate, a positive electrode contact portion in contact with a part of the transparent electrode film and electrically connected therewith, an insulating layer formed on the transparent electrode film such that the an insulating layer covers a portion excluding a light emitting part, an organic light emitting layer formed on the transparent electrode film and on the insulating layer, a negative electrode film formed on the organic light emitting layer, a negative electrode contact portion in contact with at least a part of the negative electrode film and electrically connected therewith, and a protective layer for separating and electrically insulating the positive electrode contact portion and the transparent electrode film from the negative electrode contact portion.

2014-01-16

20140014940

ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to phosphorescent organic electroluminescent devices which have a low concentration of the phosphorescent emitter in the emitting layer.

2014-01-16

20140014941

COLOR CONVERSION FILM AND MULTICOLOR-EMITTING, ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE COLOR CONVERSION FILM - A color conversion film that absorbs light from an organic electroluminescent part emitting blue-green light and converts the light to visible light at a longer wavelength. The color conversion film includes two different dyes. A first dye is a polymer dye with an average molecular weight of 1000 to 1,000,000 that absorbs light incident on the color conversion film and transfers the energy of the light to a second dye. The second dye is a dye that receives the energy from the first dye and emits light. With a multicolor-emitting, organic electroluminescent device including the color conversion film, it is possible to achieve excellent conversion efficiency without increasing the thickness of the color conversion film as in a conventional device using a binder resin. Such an organic electroluminescent device may include as well a pair of electrodes at least one of which is a transparent electrode, and an organic electroluminescent layer sandwiched between the electrodes.

2014-01-16

20140014942

THIN-FILM TRANSISTOR, ELECTRONIC CIRCUIT, DISPLAY AND METHOD OF MANUFACTURING THE SAME - A bottom gate bottom contact thin-film transistor including a gate electrode, a source electrode, a drain electrode, a dielectric layer and a semiconductor layer of a semiconducting oxide is disclosed. The dielectric layer is arranged between the gate electrode and the semiconductor layer structure, and the source electrode and the drain electrode are covered with said semiconductor layer structure. The source electrode and the drain electrode include at least a first electrode portion of an oxygen reducing material, and a second electrode portion of an additional material different from said oxygen reducing material wherein the second electrode portion of the drain at a side facing the source exposes to said semiconductor layer structure at least a surface portion of a main surface of its first electrode portion facing away from the dielectric layer.

PIXEL STRUCTURE AND FABRICATION METHOD THEREOF - A pixel structure includes a first patterned transparent conductive layer, an active layer, an insulating layer and a second patterned transparent conductive layer. The first patterned transparent conductive layer is disposed on a substrate and includes a source, a drain and a pixel electrode connected to the drain. The active layer connects the source and the drain. The insulating layer covers the source, the drain and the active layer. The second patterned transparent conductive layer is disposed on the insulating layer and includes a gate disposed above the active layer and a common electrode disposed above the pixel electrode. A fabrication method of a pixel structure is also provided.

2014-01-16

20140014945

PIXEL STRUCTURE AND METHOD OF MANUFACTURING A PIXEL STRUCTURE - A pixel structure and a method of manufacturing a pixel structure are provided. The pixel structure includes an active device, a gate insulation layer, a dielectric insulation layer, a capacitance electrode, a protection layer and a pixel electrode. The active device includes a gate, a semiconductor channel layer, a source and a drain. The dielectric insulation layer covers the semiconductor channel layer. A dielectric index of the dielectric insulation layer is greater than a dielectric index of the gate insulation layer. The capacitance electrode is overlapped with the drain. The capacitance electrode, the drain and the dielectric insulation layer between the two constitute a storage capacitor structure. The protection layer is disposed on the dielectric insulation layer and the capacitance electrode is located between the protection layer and the dielectric insulation layer. The pixel electrode is disposed on the protection layer and connected to the drain of the active device.

2014-01-16

20140014946

HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME - A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

2014-01-16

20140014947

SEMICONDUCTOR DEVICE - High field-effect mobility of a transistor including an oxide semiconductor is achieved. Further, a highly reliable semiconductor device including the transistor is provided. In a transistor having a structure in which oxide semiconductor layers are stacked over a gate electrode layer with a gate insulating layer interposed therebetween. An oxide semiconductor layer serving as a buffer layer for interface stabilization is provided between an insulating layer and an indium zinc oxide layer serving as a main current path (channel) of the transistor. The indium zinc oxide layer serving as a channel includes a crystalline portion. An oxide semiconductor which contains indium and zinc and has a larger energy gap than the indium zinc oxide layer is used for the oxide semiconductor layer serving as a buffer layer.

Display Device and Electronic Device - To improve color reproduction areas in a display device having light-emitting elements. A display region has a plurality of picture elements. Each picture element includes: first and second pixels each including a light-emitting element which has a chromaticity whose x-coordinate in a CIE-XY chromaticity diagram is 0.50 or more; third and fourth pixels each including a light-emitting element which has a chromaticity whose y-coordinate in the diagram is 0.55 or more; and fifth and sixth pixels each including a light-emitting element which has a chromaticity whose x-coordinate and y-coordinate in the diagram are 0.20 or less and 0.25 or less, respectively. The light-emitting elements in the first and second pixels have different emission spectrums from each other; the light-emitting elements in the third and fourth pixels have different emission spectrums from each other; and the light-emitting elements in the fifth and sixth pixels have different emission spectrums from each other.

MEMORY DEVICE AND MANUFACTURING METHOD THE SAME - A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

2014-01-16

20140014954

SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.

2014-01-16

20140014955

SEMICONDUCTOR DEVICE - At least one of a plurality of transistors which are highly integrated in an element is provided with a back gate without increasing the number of manufacturing steps. In an element including a plurality of transistors which are longitudinally stacked, at least a transistor in an upper portion includes a metal oxide having semiconductor characteristics, a same layer as a gate electrode of a transistor in a lower portion is provided to overlap with a channel formation region of the transistor in an upper portion, and part of the same layer as the gate electrode functions as a back gate of the transistor in an upper portion. The transistor in a lower portion which is covered with an insulating layer is subjected to planarization treatment, whereby the gate electrode is exposed and connected to a layer functioning as source and drain electrodes of the transistor in an upper portion.

2014-01-16

20140014956

THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode formed on a substrate; a gate insulation film covering the gate electrode; an oxide semiconductor layer formed on the gate insulation film; an etching stopper film formed on a channel forming portion of the oxide semiconductor layer, and a source electrode and a drain electrode covering an edge portion of the etching stopper film. The etching stopper film is made of an insulating material, and the insulating material is capable of attenuating a light having wavelength not greater than 450 nm.

2014-01-16

20140014957

SEMICONDUCTOR DEVICE INCLUDING A STRUCTURE FOR SCREENING CONNECTIVITY OF A TSV - A semiconductor device is provided to check through silicon via (TSV) connectivity at a wafer level. The semiconductor device includes a first metal layer formed over a through silicon via (TSV), a second metal layer and a third metal layer formed at both sides of the first metal layer to be electrically coupled to the TSV, and a fourth metal layer formed over the first metal layer to be electrically coupled to the first metal layer.

2014-01-16

20140014958

SEMICONDUCTOR CHIP MODULE AND SEMICONDUCTOR PACKAGE HAVING THE SAME - A semiconductor chip module includes a first semiconductor chip having first through-electrodes, a second semiconductor chip having second through-electrodes which are electrically connected with the first through-electrodes, first and second test pads, a first connection line which connects the first test pad with one second through-electrode, a second connection line which connects the second test pad with another second through-electrode, third connection lines which connect the remaining second through-electrodes into pairs, and are partially constituted by fuses, and a third semiconductor chip having fourth connection lines which electrically connect the first through-electrodes of the first semiconductor chip into pairs, wherein the first and second is through-electrodes are connected in series between the first test pad and the second test pad by the first connection line, the second connection line, the third connection lines, and the fourth connection lines.

2014-01-16

20140014959

PASSIVATION LAYER FOR PACKAGED CHIP - A packaged IC chip includes a testing pad, wherein the testing pad is electrically connected to devices in the packaged integrated circuit chip. The packaged IC chip further includes a first passivation layer over a portion of the testing pad, and a second passivation layer covering a surface of the testing pad and a portion of the first passivation layer surrounding the testing region of the testing pad. A distance between edges of the second passivation layer covering the surface of the testing pad to edges of the testing pad is in a range from about 2 mm to about 15 mm.

2014-01-16

20140014960

Display Device and Method for Manufacturing Display Device - The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attacked to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.

2014-01-16

20140014961

DISPLAY DEVICE AND DISPLAY PANEL THEREOF - A display device and a display panel thereof are provided. The display panel includes a plurality of pixels, a first adjacent zone and a plurality of gate lines. The pixels include a first pixel and a second pixel adjacent to the first pixel. Each pixel includes one of the gate lines. The gate lines include a first gate line and a second gate line. The first pixel includes the first gate line. The second pixel includes the second gate line. The first gate line and the second gate line are located at the first adjacent zone.

2014-01-16

20140014962

DISPLAY DEVICE AND PIXEL DEFECT CORRECTING METHOD - A display device includes a plurality of pixels formed in a matrix pattern by partition with a plurality of gate lines and a plurality of data lines. The plurality of pixels are connected to the plurality of gate lines and the plurality of data lines. At least a part of the plurality of pixels includes a transistor, a pixel electrode connected to the transistor, a common electrode arranged so as to be opposed to the pixel electrode, and a correction transistor portion. The correction transistor portion includes a gate electrode portion that is formed of a part of the common electrode and transmits visible light, a semiconductor active portion that transmits visible light, a drain electrode portion that forms a drain electrode, and a source electrode portion that forms a source electrode.

Semiconductor Device and Method of Manufacturing the Same - In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

2014-01-16

20140014965

Chemical vapor deposition system with in situ, spatially separated plasma - Chemical vapor deposition (CVD) systems and methods for forming layers on a substrate are disclosed. Embodiments of the system comprise a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining site isolation. Methods of forming layers on a substrate comprise forming a first layer from a precursor on a substrate in a CVD environment, contacting the substrate with plasma in a plasma environment, wherein the forming and contacting steps are performed in the unitary system and repeating the forming and contacting steps until a layer of desired thickness is formed. The forming and contacting steps can be performed to form devices having multiple distinct layers, such as Group III-V thin film devices.

2014-01-16

20140014966

GALLIUM NITRIDE DEVICES HAVING LOW OHMIC CONTACT RESISTANCE - A semiconductor structure having mesa structure comprising: a lower semiconductor layer; an upper semiconductor layer having a higher band gap than, and in direct contact with, the lower semiconductor layer to form a two-dimension electron gas (2DEG) region between the upper semiconductor layer. The 2DEG region has outer edges terminating at sidewalls of the mesa. An additional electron donor layer has a band gap higher than the band gap of the lower layer disposed on sidewall portions of the mesa structure and on the region of the 2DEG region terminating at sidewalls of the mesa. An ohmic contact material is disposed on the electron donor layer. In effect, a sideway HEMT is formed with the electron donor layer, the 2DEG region and the ohmic contact material increasing the concentration of electrons (i.e., lowering ohmic contact resistance) all along the contact between the lower semiconductor layer and the electron donor layer.

TRANSISTOR DEVICE AND FABRICATION METHOD - Various embodiments provide transistor devices and fabrication methods. An exemplary transistor device with improved carrier mobility can be formed by first forming a confining layer on a semiconductor substrate to confine impurity ions diffused from the semiconductor substrate to the confining layer. An epitaxial silicon layer can be formed on the confining layer, followed by forming a gate structure on the epitaxial silicon layer. A portion of the epitaxial silicon layer can be used as an intrinsic channel region. A source region and a drain region can be formed in portions of each of the epitaxial silicon layer, the confining layer, and the semiconductor substrate.

2014-01-16

20140014969

SEMICONDUCTOR DEVICE - A semiconductor device includes: a package; an input matching circuit and an output matching circuit in the package; and transistor chips between the input matching circuit and the output matching circuit in the package. Each transistor chip includes a semiconductor substrate having long sides and short sides that are shorter than the long sides, and a gate electrode, a drain electrode and a source electrode on the semiconductor substrate. The gate electrode has gate fingers arranged along the long sides of the semiconductor substrate and a gate pad commonly connected to the gate fingers and connected to the input matching circuit via a first wire. The drain electrode is connected to the output matching circuit via a second wire. The long sides of the semiconductor substrates of the transistor chips are oblique with respect to an input/output direction extending from the input matching circuit to the output matching circuit.

2014-01-16

20140014970

METHOD OF FABRICATING SINGLE-LAYER GRAPHENE - A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.

2014-01-16

20140014971

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.

2014-01-16

20140014972

SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

2014-01-16

20140014973

3C-SiC TRANSISTOR - A bipolar power semiconductor transistor is disclosed. The transistor includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type disposed on the semiconductor substrate; a semiconductor drift region of a second conductivity type, opposite the first conductivity type, disposed on the first semiconductor region, a body region of the first conductivity type located within the semiconductor drift region, a source region of the second conductivity type located within the body region, a gate placed above and in contact to the source region, the gate to control charge in a channel region between the semiconductor drift region and the source region and to thereby control flow of charge within the semiconductor drift region. The semiconductor substrate includes a material having silicon (Si) and the first semiconductor region includes a material having 3-step cubic silicon carbide (3C-SiC).

SEMICONDUCTOR CHIP INCLUDING HEAT RADIATION MEMBER, AND DISPLAY MODULE - A semiconductor chip includes a circuit region having an integrated semiconductor circuit on a semiconductor substrate, and a heat radiation member on at least a portion of a scribe lane region configured to at least partially surround the circuit region, the heat radiation member including a plurality of heat radiation fins that extend in a direction orthogonal to an upper surface of the semiconductor substrate.

2014-01-16

20140014976

OPTICAL DEVICE AND PROCESSING METHOD OF THE SAME - An optical device including: a rectangular front side having a light-emitting layer; a rectangular rear side parallel to the front side; and first to fourth lateral sides adapted to connect the front and rear sides, in which the first lateral side is inclined by a first angle with respect to a perpendicular of the front side, and the second lateral side opposed to the first lateral side is inclined by a second angle with respect to the perpendicular, and the third lateral side is inclined by a third angle with respect to the perpendicular, and the fourth lateral side opposed to the third lateral side is inclined by a fourth angle with respect to the perpendicular.

LED MODULE - In various embodiments, a light emitting diode module is provided. The light emitting diode module may include at least one light emitting diode; wherein the at least one light emitting diode is connected in parallel with at least one first capacitor; wherein the at least one light emitting diode is arranged in a first structural unit, and the at least one first capacitor is arranged in a second structural unit, wherein the first structural unit and the second structural unit are electrically coupled to one another via a first cable.