Abstract

We investigate the changes in the infrared response due to charge carriers introduced by electrostaticdoping of the correlated insulator vanadium dioxide integrated in the architecture of the field effect transistor. Accumulation of holes at the interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.

Received 14 April 2008Accepted 07 May 2008Published online 17 June 2008

Acknowledgments:

We thank Sun Jin Yun for a careful reading of the manuscript. We gratefully acknowledge discussions with Amos Sharoni and Ivan K. Schuller. This work was supported by the US Department of Energy and by ETRI.