Growth of thin films of lanthanide oxides and lanthanide copper oxides by MOCVD

Abstract

Thin films of CeO2, Nd2O3 and Nd2CuO4 were prepared by MOCVD on quartz, sapphire, MgO[100] and Si[100]. The usual β-diketonato complexes were used as precursors. Preliminary information about the thermal stability and possible fragmentation of the precursors was obtained by thermal analysis and mass spectrometry. The good cristallinity of the films was demonstrated by XRD. In all three compounds a preferential orientation was found. The morphology and elemental distribution on the films was investigated by profilometry and EMPA. For the deposition of CeO2 films from the precursor Ce(dpm)4 a variety of carrier and reaction gases were investigated.

title = "Growth of thin films of lanthanide oxides and lanthanide copper oxides by MOCVD",

abstract = "Thin films of CeO2, Nd2O3 and Nd2CuO4 were prepared by MOCVD on quartz, sapphire, MgO[100] and Si[100]. The usual β-diketonato complexes were used as precursors. Preliminary information about the thermal stability and possible fragmentation of the precursors was obtained by thermal analysis and mass spectrometry. The good cristallinity of the films was demonstrated by XRD. In all three compounds a preferential orientation was found. The morphology and elemental distribution on the films was investigated by profilometry and EMPA. For the deposition of CeO2 films from the precursor Ce(dpm)4 a variety of carrier and reaction gases were investigated.",

N2 - Thin films of CeO2, Nd2O3 and Nd2CuO4 were prepared by MOCVD on quartz, sapphire, MgO[100] and Si[100]. The usual β-diketonato complexes were used as precursors. Preliminary information about the thermal stability and possible fragmentation of the precursors was obtained by thermal analysis and mass spectrometry. The good cristallinity of the films was demonstrated by XRD. In all three compounds a preferential orientation was found. The morphology and elemental distribution on the films was investigated by profilometry and EMPA. For the deposition of CeO2 films from the precursor Ce(dpm)4 a variety of carrier and reaction gases were investigated.

AB - Thin films of CeO2, Nd2O3 and Nd2CuO4 were prepared by MOCVD on quartz, sapphire, MgO[100] and Si[100]. The usual β-diketonato complexes were used as precursors. Preliminary information about the thermal stability and possible fragmentation of the precursors was obtained by thermal analysis and mass spectrometry. The good cristallinity of the films was demonstrated by XRD. In all three compounds a preferential orientation was found. The morphology and elemental distribution on the films was investigated by profilometry and EMPA. For the deposition of CeO2 films from the precursor Ce(dpm)4 a variety of carrier and reaction gases were investigated.