Knowledge

1.2Gallium Nitride(GaN)-Definition
Despite the fact that GaN has been studied far more extensively than the other group
III nitrides, further investigations are still needed to approach the level of understanding
of technologically important materials such as Si and GaAs. GaN growth
often suffers from large background n-type carrier concentrations because of native
defects and, [...]

1.2.1 Chemical Properties of GaN
Since Johnson et al. [139] first synthesized GaN in 1932, a large body of information
has repeatedly indicated that GaN is an exceedingly stable compound exhibiting
significant hardness. It is this chemical stability at elevated temperatures combined
with its hardness that has made GaN an attractive material for [...]

1.2.2 Mechanical Properties of GaN
GaNhas a molecular weight of 83.7267 g mol1 in the hexagonalwurtzite structure.The
lattice constant of early samples of GaN showed a dependence on growth conditions,
impurity concentration, and film stoichiometry [151]. These observations were
attributed to a high concentration of interstitial and bulk extended defects. A case in
point [...]

1.2.3Thermal Properties of GaN
In a similar vein,GaN and other allied group III nitride semiconductors are grown
at high temperatures and also subjected to increased junction temperatures during
operation of devices such as amplifiers and light emitting devices. As such, the
structures are subjected to thermal variations as well. In this context, it [...]

1.1Crystal Structure of Nitrides
Group III nitrides can be of crystalline structures: the wurtzite (Wz), zinc blende (ZB),
and rock salt. Under ambient conditions, the thermodynamically stable structure is
wurtzite for bulk AlN, GaN, and InN. The zinc blende structure for GaN and InN has
been stabilized by epitaxial growth of thin films [...]

Introduction
GaN as a representative of its binary cousins, InN and AlN, and their ternaries along
with the quaternary, is considered one of the most important semiconductors after Si.
It is no wonder that it finds ample applications in lighting and displays of all kinds,
lasers, detectors, and high-power amplifiers. These applications stem [...]

5-1 Introduction
Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed
for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors
cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions
is expected to enable significant improvements to a far-ranging variety of applications and systems.
These range [...]

SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for SiC homoepitaxy include high-power switching [...]

5-2-1-1 SiC Crystallography
Silicon carbide occurs in many different crystal structures, called polytypes. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While there are over 100 known [...]

5-2-1-2 Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in Table 5.1. Much more
detailed electrical [...]

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The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.

Featured Products

The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.