The ultrafast relaxation of photoexcited electrons in AlN has been investigated using ensemble Monte Carlo approach. The electrons are excited using infra-red laser pulses with energies ranging from 800 mev to 1000 meV above the conduction band edge at different excitation levels. The energy relaxation, valley population, the build-up and decay of the hot phonon distributions are examined. The strong polar optical phonon scattering rates coupled with the short lifetimes of A(LO) leads to quick decay of the hot phonon distributions. Additionally, the rapid electron-electron scattering leads to fast thermalization of the carrier distributions.