Electron Spin Resonance in NTD Silicon

Abstract

Neutron transmutation doped silicon has been studied and characterized by electron spin resonance. Two samples were irradiated for the same final target resistivity (25 ohm-cm) in the University of Missouri Research Reactor. One was in a position with high flux and the second was exposed to a lower flux. The room temperature ESR spectrum as a function of anneal temperature for both samples has been obtained from the irradiation temperature up to 600°C. A number of ESR centers have been found. The lattice defect config uration corresponding to some of these centers has previously been identified and is discussed. The data indicates that ESR measurements are a non-destructive and convenient way to obtain the sample’s temperature during irradiation.

E. B. Hale in Semiconductor Research Semiannual Report, ed. by H. Y. Fan. (Purdue University, Lafayette, 1965), p. 19. In this technical report ESR measurements in neutron damaged, float zone silicon annealed at temperatures in the range 100°C to 500°C were presented. A new center, designated P7, was also discovered. This center is the same as center A3 reported in Ref. 8.Google Scholar