HANVISION CO., LTD.

Daejeon-si, KR

HANVISION CO., LTD. Patent applications

Patent application number

Title

Published

20120061572

SEMICONDUCTOR FOR SENSING INFRARED RADIATION AND METHOD THEREOF - The bolometric sensing circuit includes a pixel array comprising pixels, each pixel comprising a sensor configuration to comprise a light receiving portion to convert incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; an output portion to output a common mode voltage that represents a voltage of the sensing portion from which accumulated heat has been removed in response to a heat removing voltage to thermally reset the sensing portion, and output a sensed voltage that represents a voltage of the sensing portion which has accumulated heat for an integration period after being thermally reset; and a processor to subtract the common mode voltage from the sensed voltage to produce a signal voltage that represents a change in resistance of the sensing portion due to the heat accumulated for the integration period.

03-15-2012

20110217805

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part pattern having a beam structure in the cavity; forming a light-absorbing layer for converting energy of incident photons into heat, along the sensing part pattern; turning the entire structure over, removing the handle wafer, and thus exposing a rear portion of the sensing part pattern; and forming an additional light-absorbing layer on a rear portion of the light-absorbing layer formed on the sensing part pattern, thereby forming a sensing structure part having a beam structure. The method may further comprises: after the forming of the light-absorbing layer for converting the energy of the incident photons into the heat, forming on the light-absorbing layer a filling layer to fill up the cavity, and after the forming of the additional light-absorbing layer, selectively removing the filling layer and exposing the sensing structure part in a manner to float it over the cavity.

09-08-2011

20110169918

3D IMAGE SENSOR AND STEREOSCOPIC CAMERA HAVING THE SAME - A three-dimensional (3D) image sensor and a stereoscopic camera having the same are provided. The 3D image sensor includes one or more image acquisition regions, each image acquisition region having a plurality of pixels; and an output signal generation controller configured to extract pixel signals from two regions of interest (ROIs) set within the image acquisition regions and output image signals based on the pixel signals, the ROIs being apart from each other. The output signal generation controller may minutely adjust the position of at least one of the ROIs in accordance with a convergence adjustment signal. The output signal generation controller may vertically or horizontally move each of the ROIs in accordance with a camera shake signal and may thus correct camera shake. The output signal generation controller may align the ROIs with left and right lenses in an optical system. The output signal generation controller may vertically or horizontally move each of the ROIs in accordance with an optical axis correction signal and may thus correct an optical axis error resulting from an optical is axis misalignment.

07-14-2011

20110065223

THERMO-ELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A micro-bolometer type infrared (IR) sensing device is provided. The IR sensing device includes an absorbed heat discharging part; a sensing structure part formed as bean structure, spaced apart from the absorbed heat discharging part, supported at least at one end on the absorbed heat discharging part, and discharging heat absorbed in the sensing structure part by being elastically deformed and thus touching the absorbed heat discharging part. The sensing structure part includes: a sensing part with variation in secondary attribute (for example, in electrical resistance property) according to heat; and a light-absorbing part formed into one unit with the sensing part in a manner to surround the sensing part as seen in section view, and converting energy of incident photons into heat. The sensing structure part discharges heat absorbed therein by being elastically deformed and thus touching the absorbed heat discharge part spaced apart downward from the sensing structure part. According to an aspect of the present invention, the sensing structure part has a meander structure which is meandered while advancing and returning and showing a shape ‘⊂’ or a shape ‘⊃’ in turns at curved portions, as seen from above, near at least one end where the sensing structure part is supported, wherein the meander structure is based on a serpentine structure which is narrow in width and curved in form.

07-22-2010

20100116988

SEMICONDUCTOR FOR SENSING INFRARED RADIATION AND METHOD THEREOF - A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; and a sensing circuit which includes a common mode current providing portion and a current subtraction portion, wherein the common mode current providing portion outputs a common mode current related to a value of a current which is flowing in the sensing portion when there is no incident light and the current subtraction portion outputs subtraction currents for the common mode current and a sensing current related to a current output from the sensing portion. In another embodiment, the sensing configuration includes a heat removing portion which is disposed to form an empty space between the heat removing portion and the light receiving portion and the sensing portion, and removes accumulated heat from the light receiving portion and the sensing portion, and the sensing circuit includes an actuating voltage supplying portion which applies electric potential between the sensing portion and the heat removing portion to make the light receiving portion and the sensing portion elastically deflect into the empty space and consequently contact the heat removing portion to remove the heat.

THERMO-ELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.

03-25-2010

20100038540

IMAGE SENSOR FOR DETECTING WIDE SPECTRUM AND METHOD OF MANUFACTURING THE SAME - Provided are an image sensor for detecting a wide spectrum, including a plurality of infrared ray receiving layers which individually receive infrared rays having different wavelengths for each pixel, the plurality of infrared ray receiving layers stacked to each other, and a manufacturing method thereof. The image sensor, which is an integrated image sensor where at least two micro bolometers are stacked, acquires spectrum information about visible rays and near-infrared rays as well as two or more infrared rays applied on an object, without mechanical/thermal/optical distortion, and provides the spectrum information to a silicon-based semiconductor such as a photodiode, thereby improving photoelectric conversion efficiency.