­­­­­­­­­­­­­­­­­TSV 100 SiVia

The through-silicon via (TSV) is etched with excellent sidewall surface roughness from the center of the wafer to the edge of the wafer aligned to the notch.

All TSV wafers are etched on a 10μm to 100μm via etch pattern layout for a 200mm wafer.

The electroplated copper layer is 10,000Å followed by 2μm Cu seed layer and 1000Å titanium liner on TEOS.

SVM offers through-silicon via (TSV) wafers with a via depth of 100μm and a diameter of 50μm.

Cross Section

Si vias, before Cu seed

after Cu seed

TSV 1060 SiVia

The through-silicon via (TSV) is etched with excellent sidewall surface roughness from the center of the wafer to the edge of the wafer aligned to the notch.
All through-silicon vias are etched on a 200mm wafer.

The electroplated copper layer is 10,000Å followed by 2μm Cu seed layer and 1000Å titanium liner on TEOS.