Inorganic Photoresist

Description

Proposed inorganic photoresist is based on thin films of chalcogenide glasses deposited onto substrate by thermal vacuum evaporation. It is known, that chemical properties of such layers can be changed by light or electron-beam irradiation. Using proprietary etching solutions we can obtain positive or negative resist effect: rate of irradiated resist dissolution essentially higher or lower, than non-irradiated one.

The effects of light sensitivity of chalcogenide thin films and chalcogenide-Ag structures were discovered in V.E. Lashkaryov Institute of Semiconductor Physics (ISP) NAS of Ukraine. Investigating mechanism of photostimulated transformations in such layers made it possible to elaborate thin-film photosensitive media with the number of unique characteristics.

Also worked out are some technologies of these photosensitive layers (inorganic resists) application in photolithography, for information storage, in diffractive optics (diffraction gratings, Fresnel lenses and arrays of lenses), for direct mastering of optical discs and so on. Such resists are very promising for interferential pattern registration and relief-phase holograms formation.

Stage of Development

Pilot samples. The technology is tested and available for demonstration. Prototype samples of diffraction gratings (with spatial frequency from 600 up to 6000 mm-1), masters of rainbow holograms and optical disks are made and tested.