Details, datasheet, quote on part number: NAND128R3AN1

Part

NAND128R3AN1

Category

Memory => Flash => NAND Flash

Description

NAND Flash Memory<<<>>>the NAND Flash 528 Byte/ 264 Word Page is A<<<>>>family of Non-volatile Flash Memories That Uses<<<>>>nand Cell Technology. The Devices Range From<<<>>>128Mbits to 1Gbit And Operate With Either a 1.8V<<<>>>or 3V Voltage Supply. The Size of a Page is Either<<<>>>528 Bytes (512 + 16 Spare) or 264 Words (256 + 8<<<>>>spare) Depending on Whether The Device Has a X8<<<>>>or X16 Bus Width.<<<>>>the Address Lines Are Multiplexed With The Data Input/<<<>>>output Signals on a Multiplexed x8 or X16 Input/<<<>>>output Bus. This Interface Reduces The Pin<<<>>>count And Makes it Possible to Migrate to Other<<<>>>densities Without Changing The Footprint.<<<>>>each Block CAN be Programmed And Erased Over<<<>>>100,000 Cycles. To Extend The LiFETime of NAND<<<>>>flash Devices it is Strongly Recommended to Implement<<<>>>an Error Correction Code (ECC). A Write<<<>>>protect Pin is Available to Give a Hardware Protection<<<>>>against Program And Erase Operations.<<<>>>the Devices Feature an Open-drain Ready/busy<<<>>>output That CAN be Used to Identify if The Program/<<<>>>erase/read (P/E/R) Controller is Currently Active.<<<>>>the Use of an Open-drain Output Allows The Ready/<<<>>>busy Pins From Several Memories to be Connected<<<>>>to a Single Pull-up Resistor.<<<>>>a Copy Back Command is Available to Optimize The<<<>>>management of Defective Blocks. When a Page<<<>>>program Operation Fails, The Data CAN be Programmed<<<>>>in Another Page Without Having to Resend<<<>>>the Data to be Programmed.