Proceedings
of the 14th International Symposium on Space Terahertz Technology (2003)[Artikel, refereegranskad vetenskaplig]

We report on the design and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with an output frequency of 500 GHz. The HBV is a symmetric varactor, thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device, the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the traditional Schottky varactor for high order frequency multiplier circuits. We present analytical, temperature dependent models, which can be used to calculate parameters such as optimum doping concentration, layer structure, device area and series resistance for HBVs, as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools, for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency for a planar, six-barrier InGaAs HBV of more than 30%, for an input power level of 19 dBm. A waveguide circuit realisation of a 500 GHz HBV quintupler is presented.

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BibTeX @article{Ingvarson2003,author={Ingvarson, Mattias and Olsen, Arne Øistein and Stake, Jan},title={Design and analysis of
500 GHz heterostructure barrier varactor quintuplers},journal={Proceedings
of the 14th International Symposium on Space Terahertz Technology},abstract={We report on the design and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with an output frequency of 500 GHz. The HBV is a symmetric varactor, thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device, the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the traditional Schottky varactor for high order frequency multiplier circuits. We present analytical, temperature dependent models, which can be used to calculate parameters such as optimum doping concentration, layer structure, device area and series resistance for HBVs, as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools, for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency for a planar, six-barrier InGaAs HBV of more than 30%, for an input power level of 19 dBm. A waveguide circuit realisation of a 500 GHz HBV quintupler is presented.},year={2003},keywords={heterostructure barrier varactor (HBV), frequency multiplier, sub-millimetre wave, sub-millimetre wave, semiconductor diode, symmetric varactor},}

RefWorks RT Journal ArticleSR PrintID 2238A1 Ingvarson, MattiasA1 Olsen, Arne ØisteinA1 Stake, JanT1 Design and analysis of
500 GHz heterostructure barrier varactor quintuplersYR 2003JF Proceedings
of the 14th International Symposium on Space Terahertz TechnologyAB We report on the design and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with an output frequency of 500 GHz. The HBV is a symmetric varactor, thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device, the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the traditional Schottky varactor for high order frequency multiplier circuits. We present analytical, temperature dependent models, which can be used to calculate parameters such as optimum doping concentration, layer structure, device area and series resistance for HBVs, as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools, for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency for a planar, six-barrier InGaAs HBV of more than 30%, for an input power level of 19 dBm. A waveguide circuit realisation of a 500 GHz HBV quintupler is presented.LA engOL 30