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Controlled synthesis of large grain single crystal graphene by chemical vapor deposition

CONTROLLED SYNTHESIS OF LARGE GRAIN SINGLE CRYSTAL
GRAPHENE BY CHEMICAL VAPOR DEPOSITION
by
Ning Yang
A Thesis Presented to the
FACULTY OF THE USC VITERBI SCHOOL OF ENGINEERING
UNIVERSITY OF SOUTHERN CALIFORNIA
In Partial Fulfillment of the
Requirements for the Degree
MASTER OF SCIENCE
(ELECTRICAL ENGINEERING)
May 2012
Copyright 2012 Ning Yang

This thesis presents a novel Chemical Vapor Deposition (CVD) method that can produce six-lobe large grain single crystal graphene with grain size up to 80 um. The new CVD method introduces a reduced carbon source concentration and an intentionally reduced gas flow rate in the initial stage. Compared with previously reported methods, this method offers a promising pathway for investigation of the growth mechanism of six-lobe large grain single crystal graphene CVD process. Controlled synthesis of six-lobe, square and hexagonal shaped single crystal graphene has been achieved by varying the pressure increasing method. The comparison study gives a good indication of the dependent relationship between pressure increasing methods and different single crystal graphene morphologies.

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CONTROLLED SYNTHESIS OF LARGE GRAIN SINGLE CRYSTAL
GRAPHENE BY CHEMICAL VAPOR DEPOSITION
by
Ning Yang
A Thesis Presented to the
FACULTY OF THE USC VITERBI SCHOOL OF ENGINEERING
UNIVERSITY OF SOUTHERN CALIFORNIA
In Partial Fulfillment of the
Requirements for the Degree
MASTER OF SCIENCE
(ELECTRICAL ENGINEERING)
May 2012
Copyright 2012 Ning Yang