The fabrication of solid C$\sb{60}$ device structures by vacuum sublimation methods is described. The experimentally determined threshold of intrinsic conductivity of solid C$\sb{60}$ is $\sim$1.5eV. The observations of ...

This dissertation analyzes the feasibility and advantages of molecular functionalization of scanning tunneling microscope (STM) probes with buckminsterfullerenes. The C$\sb{60}$ molecules are adsorbed onto the tunneling ...

A number of different methods for electrically characterizing ZnSe thin films are presented. These include the Hall effect, current-voltage profiling, and capacitance-voltage profiling. The planar Schottky technique is ...

The spontaneous polarization of thin film LiNbO$\sb3$ has been shown to be reversible with the application of an electric field at room temperature. This electric field is applied across the sample in the form of a voltage ...

Degradation of the tunneling oxide film in EEPROM and FLASH memory test structures has been studied. Two models have been used to characterize the tunneling induced degradation of the oxide thin film. They are the effective ...

A novel model system is developed to study the effects of the environment on transport properties of a superconducting single-electron transistor (S-SET). The impedance of a two-dimensional electron gas (2DEG) 50 nm below ...