Abstract

We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17dB are obtained for both the ‘on’ and ‘off’ switching states over an optical bandwidth of 110nm, owing to the implementation of broadband 50% couplers. Full 2×2 switching functionality is demonstrated, with low power consumption (~3mW) and a fast switching time (<4ns). The utilization of standard CMOS metallization results in a low drive voltage (~1V) and a record-low VπL (~0.06V·mm). The wide optical bandwidth is maintained for temperature variations up to 30K.

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