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Abstract

Colored semi-transparent Cu-Si oxide thin films have been prepared by reactive magnetron sputtering from a single cathode of copper-silicon composition. Thin films of different composition and optical response were obtained by changing process parameters like the relative amount of copper in the target and the O2/Ar mixture of the reactive plasma gas. The film characteristics were analyzed by several techniques. Their optical properties (refractive index, absorption coefficient, color) have been correlated with the process parameters used in the film preparation as well as with the film stoichiometry and chemistry.

Figures (11)

OES spectra corresponding to several ΦO2/ΦAr ratios of the process plasma discharge, as indicated. Bands are assigned to different species according to [15]. Inset: Intensity ratios of the strongest Cu (I324 + I327) and Ar (I416 + I420) emission lines in the plasma discharge as a function of the gas flow ratio ΦO2/ΦAr corresponding to a Si target with 3 Cu strips, 100 W applied power and 5x10−3 mbar total pressure in the reaction chamber.

Refractive index (left) and extinction coefficient (right) of a series of Cu-Si oxide thin films for a ΦO2/ΦAr ratio of 1.0 and different number of strips in the cathode and for 3 stripes and different values of the ΦO2/ΦAr ratio.

Left: (x,y) chromaticity coordinates (evaluated in transmission) of the Cu-Si oxide thin films studied in this work represented in the CIE 1931 chromaticity diagram. Right: Example of the deposition of Si-Cu mixed oxides with 1, 2 or 3 Cu strips wrapped to a Si target and ΦO2/ΦAr = 0.1.