Home » Multilayer structure for epitaxial growth of oxide films on Si with an underlying electrode

TITLE

Multilayer structure for epitaxial growth of oxide films on Si with an underlying electrode

AUTHOR(S)

Hung, L.S.; Bosworth, L.A.

PUB. DATE

May 1993

SOURCE

Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2625

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

Examines the multilayer structure for oxide thin films epitaxial growth on silicon (Si). Action of epitaxial layer calcium fluoride for metal-substrate reaction; Deposition of potassium niobate on the multilayer structure; Use of Si wafers as a substrate for multilayer structures.

ACCESSION #

4375165

Related Articles

Presents the autocorrelation function analysis of amorphous interlayers formed in the interfacial reactions of molybdenum (Mo) thin films on (111)silicon (Si). Use of transmission electron microscopy; Correlation between Mo[sub 3]Si and Mo-Si alloy; Identification of Mo[sub 3]Si as the first...

The localization of voids in thin Si1-xGex layers after He+ implantation and thermal annealing is reported. A Si/Si1-xGex multilayer grown onto (001) Si was implanted with He+ in the 10-30 keV range, with fluences from 7Ã—1015 up to 1Ã—1016 cm-2, and annealed at 800 Â°C for 1 h. Samples...

Investigates the Y[sub 2]O[sub 3] single crystalline substrate for epitaxial growth of high T[sub c] superconducting thin films. Orientation relationship between the films and the substrate; Characterization of the interface.

Radiation-stimulated interfacial gas release in an Agï¿½glass thin-film system is investigated. It is established that under proton irradiation hydrogen accumulates in bubbles, which are the interfacial gas reservoirs, at the interface. The gas bubbles formed are studied and their parameters...

Examines the composition of thin dielectrics grown on silicon in a pure nitrate oxide ambient. Analysis of the layers in thin dielectric chemical etching; Presence of thin nitrogen-rich layer in the silicon-silicide oxide interface; Growth rate of the nitrogen oxide.

Investigates the heteroepitaxial growth of thin-sputtered copper (Cu) film on beta-tantalum (beta-Ta) adhesion layer. Use of high resolution electron microscopy and electron diffraction; Characteristics of the beta-Ta-deposited silicon; Use of beta-Ta as an underlayer for Cu metallization to...