Abstract

We have developed a simple approach to fabricate wide band gap surface layer for Cu(In,Ga)Se2 (CIGS) thin film. The Cu depleted surface layer was reconstructed by an In-Ga-Se post deposition treatment at different temperatures, which was monitored by a light controlling method. A desirable Cu concentration in surface layer has been achieved after depositing a 80nm thick In-Ga-Se layer at 400°C and the corresponding device performance is remarkably improved compared with device without surface modification. Additionally, the excess Cu2-xSe phase on the surface could also be eliminated by this method in case of high Cu/(In+Ga).

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