Iliadis, Agis

Research Interests

Elemental and Compound Semiconductor Materials and Devices

Wide Band-Gap Semiconductors

Ohmic and Schottky Metallization Systems

Light Emitting Processes

Epitaxial Growth

Background

Professor Agis A. Iliadis is the Director of the Semiconductor Nanotechnology Research Laboratory and a member of the Maryland NanoCenter. He received his M.Sc. and Ph.D. degrees in Electrical Engineering, from the Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology (UMIST).

His expertise is in the areas of nanotechnology, sensors, semiconductor devices/circuits, and CMOS IC technology. Current research focus is in novel sensors and nanotechnology compatible with CMOS IC technology for developing multi-functionality in CMOS ICs, smart sensor arrays, and nanodevices. His contributions are in the development of self-assembled nanostructures and nanocomposite copolymers on Si CMOS wafers, ZnO and SiC wide band-gap semiconductor devices and technology, gas sensors, heterojunction field effect transistors (HEMTs), SOI MOSFETs, light emitting devices in III-V semiconductors, light emission in Si, ohmic contacts, thin film epitaxial growth, improved metal/semiconductor and oxide/semiconductor interfaces, and electromagnetic interference (EMI) in CMOS integrated circuits.

He is a senior member of the IEEE, a Distinguished Lecturer in the IEEE-EDS Society, an AdCom member of the IEEE-EDS Technical Committee on Electronic Materials, an AdCom member of the IEEE EDS Educational Activities Committee, and the EDS Representative to IEEE-USA Professional Activities Board (PACE). He is a member of MRS, LEOS, InstPhys (UK), SPIE, TMS, DEPS, and ECS and organized and served in several Conference Committees.