Abstract

Multiple liquid phase epitaxy of In1−xGaxP1−z Asz‐InP double heterojunctions, from a single set of In‐rich melts, is demonstrated, and is shown to be a useful technique for the study of the problem of lattice matching at heterojunctioninterfaces and for growing large numbers of low‐threshold (’’defect‐free’’) DH laser wafers (λ∼1 μm).