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Feb 9, 2014

We
report the growth of high crystalline quality GaN-based light emitting diodes
(LEDs) on Si (111) substrates with AlN/GaN superlattice interlayer for both
stress and dislocation engineering. A focused study involved comparison of
different interlayer structures including low-temperature AlN,
medium-temperature AlN multilayers and AlN/GaN supperlattice for optimization
of the LED performance. The results show that the AlN/GaN supperlattice
interlayer is the most effective in reducing the residual tensile stress and
improving the crystalline quality of GaN on Si. With the AlN/GaN superlattice
interlayer, optical properties of the LEDs were enhanced and optical output
power of unpackaged LED chips on Si substrates was improved by 24%.Highlights►
High-performance GaN-based LEDs grown on Si (111) substrates using MOVPE.