Abstract

Photoconductivity of amorphous silicon carbon nitride as a function of incident photon energies has been studied. A metal-semiconductor-metal photodetector device based on the thin film demonstrates excellent selective ultraviolet sensing features. A large photo-to-dark current ratio about 5000 and a relative quantum efficiency about under illumination of the light source and a bias voltage of were observed. A model based on the heterogeneous structure in the thin film which consists of bands and bands was introduced to account for the observed photoconductive transport properties.