Abstract

Hall effect measurements have been performed on tin-doped indium oxide thin films prepared by the dipping method. The apparent variation of electron mobility with carrier concentration in these films has been quantitatively interpreted in terms of scattering at charged and neutral impurities. An electrical resistivity as low as was obtained for the films doped with about 6 at. % Sn. A further increase in the doping content lead to the formation of neutral defects without contributing carriers to the material.