The
authors propose and demonstrate the integration of a photodiode, a quantum-confined
Stark-effect quantum-well optical modulator, and a metal-semiconductor field-effect
transistor (MESFET) to make a field-effect transistor self-electrooptic effect device.
This integration allows optical inputs and outputs on the surface of a GaAs-integrated
circuit chip, compatible with standard MESFET processing. To provide an illustration of
feasibility, the authors demonstrate signal amplification with a single MESFET