Abstract

Interferometric lithography was used to create a wide variety of two-dimensional and three-dimensional patterns in standard photoresist. The patterns were then converted to amorphous carbon structures through pyrolysis in a reducing atmosphere. The structures maintain their fundamental in-plane morphology despite undergoing significant shrinkage. As an indication of their functionality, the authors highlight their use in two diverse applications: (1) as a defect reduction mask in metal-organic chemical vapor depositiongrowth of gallium nitride(GaN) on sapphire and (2) as a nanoparticle decorated electrode for catalytic oxidation of methanol.

The authors would like to acknowledge Bonnie McKenzie for providing SEM images. The interferometric lithography work took place at the Center for High Technology Materials at the University of New Mexico in collaboration with Alex K. Raub and S. R. J. Brueck. This work was supported by the Laboratory Directed Research and Development program at Sandia National Laboratories. Sandia is multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy’s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.