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Abstract

III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ~9 nm at 20 mW optical power. Owing to the fast recombination (τe<0.35 ns) through the amplified spontaneous emission, the SLD exhibits a significantly large 3-dB bandwidth of 807 MHz. A data rate of 1.3 Gbps with a bit-error rate of 2.9 × 10−3 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications.

Plot of: (a) electroluminescence (EL) spectra of the SLD under current injection of 50 mA - 400 mA; (b) Comparison of EL spectra from an LD, SLD and LED at 400 mA; (c) FWHM and peak wavelength of the SLD as a function of injection current at room temperature.

Plot of: (a) Optical power vs. injection current (L-I) from the top emission (SE) and edge emission (ASE + SE) of the SLD. The current density is labeled as well. Inset: Photo of the edge-emitting SLD operating at 300 mA. (b) Current vs. voltage (I-V) relation of the SLD. Inset: I-V curve in log scale. (c) Capacitance vs. voltage (C-V) characteristics of the SLD. (d). 1/C2vs. voltage relation with a slope of −4.2 × 1018.