Abstract

We experimentally investigate the optical properties of a novel hybrid material/structure consisting of a GaInNAs quantum well and stacked InAs/InGaAs quantum dot layers on GaAs substrate. We demonstrate that the strong quantum confined Stark effect within the quantum well can effectively control well-dot detuning when reverse bias voltage is applied. With a combination of low- and room-temperature time resolved luminescence spectra we infer device absorption recovery time under 30 ps. These properties could be utilized in high-speed optoelectronics devices, in particular electro-absorption modulated lasers and reconfigurable multisection devices, where the hybrid quantum dots – quantum well material system could offer easily and rapidly interchangeable function, i.e., emission gain or variable attenuation, of each section depending on the external bias.