8 Properties of CNTs Strong and very flexible molecular materialElectrical conductivity is 6 times that of copperHigh current carrying capacityThermal conductivity is 15 times more than copperToxicity?Amitesh04/29/2014

19 Removal of m-CNTFETsVMR Technique : A special layout called VMR structure consisting of inter-digitated electrodes at minimum metal pitch is fabricated. M-CNT electrical breakdown performed by applying high voltage all at once using VMR. M-CNTs are burnt out and unwanted sections of VMR are later removed.Using Thermal and Fluidic Process: Preferential thermal desorption of the alkyls from the semiconducting nanotubes and further dissolution of m-CNTs in chloroform.Chemical Etching: Diameter dependent etching technique which removes all m-CNTs below a cutoff diameter.04/29/2014

22 Conditional probability after removal techniquesNs = number of surviving s-CNTsNm = number of surving m-CNTsprs = conditional probability that a CNT is removed given that it is s-CNTprm = conditional probability that a CNT is removed given that it is m-CNTqrs = 1 - prsqrm = 1 -prm04/29/2014

25 µ(ICNT) = psµ( Is )+ pmµ(Im )Current of a single CNTICNT = ps Is + pmImµ(ICNT) = psµ( Is )+ pmµ(Im )ICNT = drive current of single CNT (type unknown)Is = drive current of single s-CNTIm = drive current of single m-CNTps = probability of s-CNTpm = probability of m-CNT04/29/2014

39 CONCLUSIONModeled count variations and hence device current as a probabilistic functionStudied the affect of these faults on tuning ratio and gate delayInferred some design guidelines that could be used to judge the correctness of a processMathematically derived noise margin based on current equations – better noise margin than a CMOS04/29/2014