quarta-feira, 22 de setembro de 2010

600/1200V IGBTs Set Benchmark Performance in High Switching Speed Applications

The third generation of high speed IGBTs from Infineon Technologies (H3) in the voltage class 600V and 1200V are optimised for high speed switching in welding, UPS, SMPS and Solar applications. The new devices show excellent dynamic behaviour, smooth switching and significant loss reduction, providing the system designers with a cost-effective solution to meet today’s stringent requirements of energy efficiency regulations and simplify the system design by reduction of cooling and filtering efforts. Davide Chiola andHolger Hüsken, IGBT Application Engineering and IGBT Technology Development, InfineonTechnologies, Austria/GermanyFULL PAPER HERE:http://www.4shared.com/document/1Isct0m_/IGBTNOVO.html

Issue 5 2010 Power Electronics Europe www.power-mag.com Power electronics systems are commonly used in motor drive, power supply and power conversion applications. They cover a wide output power spectrum: from several hundred watts in small drives up to megawatts in wind-power installations or large drive systems. Inside the system the gate driver circuit withits extensive control and monitoring functions forms the interface between the microcontroller and the power switches (IGBT). This article provides an overview of different gate driver topologies for different power ranges and shows examples for monolithic integration of the driver functionality. R. Herzer, J.Lehmann, M. Rossberg, B. Vogler, SEMIKRON Elektronik, Nuremberg, Germany.

Design and Implementation of Parallel Operation ofInverters with Instantaneous Current Sharing SchemeUsing Multiloop Control Strategy on FPGA PlatformA thesis submitted in partial ful llment of the requirementsfor the degree of Master of Technology by Shahil Shahto theDepartment of Electrical EngineeringIndian Institute of Technology, KanpurJuly 2008.

Mosfet_or_IGBT_Driver IC 2101.aviDriving a mosfet or an IGBT in a half bridge configuration requires a driver as the top mosfet or IGBT has to get the DC supply from an isolated source.Understanding its use helps writting its input program and output use for inverters ,converters erc .

Energy Efficiency in India: Challenges and InitiativesBerkeleyLab 20 de maio de 2010May 13, 2010 EETD Distinguished Lecture: Ajay Mathur is Director General of the Bureau of Energy Efficiency, and a member of the Prime Minister's Council on Climate Change. As Director General of BEE, Dr. Mathur coordinates the national energy efficiency programme, including the standards and labeling programme for equipment and appliances; the energy conservation building code; the industrial energy efficiency programme, and the DSM programmes in the buildings, lighting, and municipal sectors.

Product’s Primary FunctionPower electronics modules are the core components of all power electronicssystems. In essence, power electronics systems convert electrical energy fromone form (provided by a source) into another form (consumed by a load). They arerequired to drive electric motors (such as those for electric and hybrid vehicles),convert energy from renewable sources (i.e., solar arrays or wind generators), andprovide power for a wide variety of electronics and electronic systems (DC powersupplies and inverters).With applications in hybrid and electric vehicles, renewable energy interfaces,and more-electric aircraft, it reduces size and volume of power electronicsystems by an order of magnitude over present state-of-the-art silicon-basedsolutions while simultaneously reducing energy loss by greater than 50 percent andoffering the potential to save $100s of millions.Our team’s high-temperature silicon carbide power module is the world’s firstcommercial high-temperature (250°C) silicon carbide-based power electronicsmodule. The 50 kW (kilowatt) (1200 V (volt) /150 A (ampere) peak) silicon carbide(SiC) power modules are rated up to 250°C junction temperature and integratehigh-temperature gate drivers.Figure 9.1. Exploded view of the high-temperature SiC half-bridge power module.

Quem sou eu -Quien soy yo

Ingeniero Electrónico peruano,egresado de la Universidad Nacional Mayor de San Marcos-LIMA-PERU
Armando Walter Cavero Miranda was born in Lima, PERU, in 1957.
He received the B.S. degree in Electronic and Electrical Engineering from SAN MARCOS NATIONAL UNIVERSITY, Lima, PERU, in 1985 ,and the M.S LATU SENSU. degree in 1994,from SÂO JUDAS TADEU University of, SAO PAULO, BRASIL.
Eng. Armando Cavero Miranda has more than twenty years industry and research experiences in the area of power electronics engineering.
His current research
interests are power electronic control of power supply and
electric machines,circuits simulation PSPICE ORCAD PSIM SIMULINK