TECHNICAL PUBLICATIONS:

Characteristics of InGaN/AlGaN multiple quantum well laser diodes

IEEE Journal of Selected Topics in Quantum Electronics

We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple-quantum-well devices were grown by organometallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were in the range from 419 to 432 nm. The lowest threshold current density obtained was 20 kA/cm2 with maximum output powers of 50 mW. Longitudinal Fabry-Perot modes are clearly resolved in the high-resolution optical spectrum of the lasers, with a spacing consistent with the cavity length. Cavity length studies on a set of samples indicate that the distributed losses in the structure are on the order of 30-40 cm-1.