Abstract

Nitrogen incorporation into hydrogenated amorphous carbonfilms has recently attracted a wide range of interest due to its contribution in reducing film stress and improving field emissionproperties. In this work we characterize the electrical properties of nitrogen containing films. The films were prepared by plasma enhanced chemical vapor deposition in an acetylene environment with a range of bias voltages. Nitrogen incorporation was achieved by exposing the films to an atomic nitrogen flux from a rf plasma with up to 40% dissociation and atomic nitrogen fluxes of up to Raman results indicate that the doping process is accompanied by some structural changes seen by the G-band peak shifts. X-ray photoelectron spectroscopyspectra suggest that the dopant levels exceed those previously reported. Capacitance probe and techniques showed a decrease in contact potential difference and density of states for dopedfilms, indicating a rise in the Fermi level.