Abstract

The authors report on transparent thin-film transistors using amorphousindiumzinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphousindiumzinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous served as the gate dielectric oxide. Devices were realized that display a threshold voltage of and an on/off ratio of operated as a -type enhancement mode with saturation mobility of . The devices showed optical transmittance about 80% in the visible range.

Received 12 November 2006Accepted 04 December 2006Published online 10 January 2007

Acknowledgments:

This work was supported by the National Research Laboratory grant from the Ministry of Science and Technology (MOST) and Korea Science and Engineering Foundation (KOSEF). Financial support from Daegu Gyeongbuk Institute of Science & Technology (DGIST) was gratefully acknowledged.