Titiania Nanoparticles

SEM image of silver nanoplates

SEM image of silver nanoplates with thicknesses of 50–70 nm and edge lengths ranging from 200 nm to 1 mm, which are grown on semiconductor wafers at room temperature through a simple galvanic reaction between an aqueous solution of silver nitrate and n-type GaAs (Yugang Sun and Gary Wiederrecht), Argonne's Center for Nanoscale Materials.

Image: Photo courtesy of Argonne National Laboratory.

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SEM image of silver nanoplates

SEM image of silver nanoplates with smooth morphology grown on semiconductor wafers at room temperature through a simple galvanic reaction between an aqueous solution of silver nitrate and n-type GaAs (Yugang Sun and Gary Wiederrecht,), Argonne's Center for Nanoscale Materials.

Image: Photo courtesy of Argonne National Laboratory.

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Complex Oxide Molecular Beam Epitaxy--3

Anand Bhattacharya shown with complex oxide molecular beam epitaxy instrument (DCA R450D Custom). This technology allows pure complex oxides films to be grown epitaxially; of special interest are films that are ferroelectric, ferromagnetic, or superconducting. Alternating layers can be deposited to allow the observation of novel properties at the boundary or interface.
The Center for Nanoscale Materials (CNM) at Argonne National Laboratory is a joint partnership between the U.S. Department of Energy (DOE) and the State of Illinois, as part of DOE’S Nanoscale Science Research Center program.

Image: Photo courtesy of Argonne National Laboratory.

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Chemical Vapor Deposition System

Lamda Technologies microwave plasma-enhanced chemical vapor deposition (PECVD) system housed in Argonne's Center for Nanoscale Materials cleanroom facility; available in the user program for the growth of ultrananocrystalline diamond films.