Sounds okay to me (we used to do implants to GaAs wafers here before. No
problems.) -mike
At 03:10 PM 1/21/2005, you wrote:
>Specmat committee:
>>Mike Weimer would like to do a moderate dose H+ implant into a GaAs
>partial wafer ... my inclination is that this should be just fine as the
>potential heating due to the implant beam should be virtually non-existant.
>>Does anyone have any other concerns related to this?
>>Thanks,
>>John