An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.

特許請求の範囲（英語）

[claim1]1. A III-nitride light emitting device, comprising: a plurality of III-nitride layers comprising at least one p-type layer, an active region, and at least one n-type layer, wherein the III-nitride layers are not c-plane III-nitride layers, and wherein the active region is comprised of at least one III-nitride quantum well layer having a thickness that achieves a current density such that light is emitted at an output power of at least 25 milliWatts (mW) when a current input at 20 milliAmps (mA) is applied.[claim2]2. The device of claim 1, wherein the at least one quantum well layer has a thickness of approximately 8-12 nanometers.[claim3]3. The device of claim 1, wherein the at least one quantum well layer has a thickness of approximately 10 nanometers.[claim4]4. The device of claim 1, wherein one or more emitting surfaces of the device is roughened, textured, patterned or shaped.[claim5]5. The device of claim 4, wherein more than one emitting surface of the device is roughened, textured, patterned or shaped.[claim6]6. The device of claim 4, wherein the emitting surface of the device is a cone shaped surface.[claim7]7. The device of claim 1, wherein the active region is comprised of multiple emitting layers emitting light at more than one wavelength.[claim8]8. The device of claim 1, further comprising a transparent electrode layer is formed adjacent the III-nitride layers.[claim9]9. The device of claim 8, wherein the transparent electrode layer is an electrically conductive contact layer.[claim10]10. The device of claim 8, wherein a surface of the transparent layer is roughened, textured, patterned or shaped.[claim11]11. The device of claim 8, wherein a current spreading layer is deposited before the transparent electrode layer.[claim12]12. The device of claim 1, wherein the device is placed on a transparent mounting structure.[claim13]13. The device of claim 1, wherein the active region includes at least one quantum well layer having a thickness greater than 5 nanometers to increase emitting efficiency as compared to non-polar or semi-polar III-nitride quantum well layers having a thickness of 5 nanometers or less and the light-emitting device has increased light emitting efficiency as the thickness is increased.[claim14]14. A method of fabricating a III-nitride light emitting device, comprising: forming a plurality of III-nitride layers comprising at least one p-type layer, an active region, and at least one n-type layer, wherein the III-nitride layers are not c-plane III-nitride layers, and wherein the active region is comprised of at least one III-nitride quantum well layer having a thickness that achieves a current density such that light is emitted at an output power of at least 25 milliWatts (mW) when a current input at 20 milliAmps (mA) is applied.[claim15]15. The method of claim 14, wherein the at least one quantum well layer has a thickness of approximately 8-12 nanometers.[claim16]16. The method of claim 14, wherein the at least one quantum well layer has a thickness of approximately 10 nanometers.[claim17]17. The method of claim 14, wherein one or more emitting surfaces of the device is roughened, textured, patterned or shaped.[claim18]18. The method of claim 17, wherein more than one emitting surface of the device is roughened, textured, patterned or shaped.[claim19]19. The method of claim 17, wherein the emitting surface of the device is a cone shaped surface.[claim20]20. The method of claim 14, wherein the active region is comprised of multiple emitting layers emitting light at more than one wavelength.[claim21]21. The method of claim 14, further comprising forming a transparent electrode layer adjacent the III-nitride layers.[claim22]22. The method of claim 21, wherein the transparent electrode layer is an electrically conductive contact layer.[claim23]23. The method of claim 21, wherein a surface of the transparent layer is roughened, textured, patterned or shaped.[claim24]24. The method of claim 21, wherein a current spreading layer is deposited before the transparent electrode layer.[claim25]25. The method of claim 14, wherein the device is placed on a transparent mounting structure.[claim26]26. The method of claim 14, wherein the active region includes at least one III-nitride quantum well layer having a thickness greater than 5 nanometers to increase emitting efficiency as compared to non-polar or semi-polar III-nitride quantum well layers having a thickness of 5 nanometers or less and the light-emitting device has increased light emitting efficiency as the thickness is increased.