Abstract

In this paper,no el metal membrane series switches and inducti ely tuned shunt switches are presented.The series switch produces an isolation better than - 30 dB at 5 GHz in the up-state and return loss less than -20 dB from DC to 20 GHz. The shunt switch geometry can be modi ﬁed to specify the resonant frequency of the switch in the down-state.The shunt switch is modeled by an equivalent CLR circuit.The MEMS membrane height is 1.5-2.5 µm,resulting in a pulldown oltage of 15-25 V.Application areas are in low-loss high-isolation communication and radar switches.

Abstract

In this paper,no el metal membrane series switches and inducti ely tuned shunt switches are presented.The series switch produces an isolation better than - 30 dB at 5 GHz in the up-state and return loss less than -20 dB from DC to 20 GHz. The shunt switch geometry can be modi ﬁed to specify the resonant frequency of the switch in the down-state.The shunt switch is modeled by an equivalent CLR circuit.The MEMS membrane height is 1.5-2.5 µm,resulting in a pulldown oltage of 15-25 V.Application areas are in low-loss high-isolation communication and radar switches.