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Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition
technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate
temperature on the structure and electrical properties of IrO2 films was investigated. The deposited films
at substrate temperatures ranging from 250 to 500°C under an oxygen pressure of 20Pa were pure
polycrystalline tetragonal IrO2 and the preferential growth orientation changed with the substrate
temperature. IrO2 films were well solidified with the fairly homogeneous thickness and exhibited a good
adhesion with the substrate. The room-temperature resistivity of IrO2 films decreased with the increase of
substrate temperature and the minimum resistivity of (42±6) μ-·cm was deposited at 500°C.

Abstract: Indium tin oxide (ITO) used in many applications such as electronic and optical devices
were deposited on the soda lime glass substrate by an electron beam evaporation techniques from a
mixture of 90wt% of In2O3 and 10wt% of SnO2. The physical, electrical and optical properties of the
ITO films were determined as a function of substrate temperature. The films deposited at 200
showed optimum properties with a strong diffraction peak having a preferred orientation along the
[111] direction. Experimental results showed that sheet resistance and transmittance of the ITO film
increased with an increase in substrate temperature. Surface roughness increased slightly as a function
of substrate temperature because of grain growth.

Abstract: High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by
pulsed laser deposition on quartz glass substrates at room temperature. We varied the growth
condition in terms of oxygen pressure. The structure and electrical and optical properties of the
as-grown AZO films were mainly investigated. The AZO films formed at room temperature showed a
low electrical resistivity of 3.01×10-4 ) cm, a carrier concentration of 1.12×1021 cm-3 and a carrier
mobility of 18.59 cm2/Vs at an oxygen pressure of 10 mTorr. A visible transmittance of above 83%
was obtained. The present results suggest that optimized AZO films should be very useful and
effective for flexible display, top emission type of OLEDs and for various other kinds of
optoelectronic devices such as flexible solar cell or passive photo device.

Abstract: Sn doped indium oxide (ITO) films were fabricated on polyethylene terephtalate (PET)
substrate by magnetron sputtering at low deposition temperature using a 10 wt % SnO2-doped In2O3
target applied in the infrared regions as low emissivity materials. The microstructure and surface
morphology of ITO films was studied using X-ray diffraction (XRD) and atomic force microscopy
(AFM); the resistivity was investigated by four-point probe technology. It was found that the film
with amorphous microstructure has highest resistivity to 1.956×10-3 2.cm at low deposition
temperature and the surface roughness and resistivity increase with the increasing Ar sputtering
pressure from 0.5Pa to 1.4Pa. The most interesting is that the resistivity increases with the
increasing surface roughness, it indicates that there are internal correlation between roughness and
resistivity.

Abstract: “GfE Coating Materials Company” had developed a novel AZOY transparent conducting oxide (TCO) material that used ZnO as raw material and contained a small amount of Y2O3 and Al2O3. In this study, the AZOY material developed by GfE company is used as the based TCO material and we will develop the influences of substrate temperatures on the characteristics of AZOY TCO films by RF sputtering method, under optimal O2/argon ratio and depositing pressure. After deposition, the sheet resistance of AZOY films is measured with a four point probe, and surface morphology and cross-sections are studied using a field emission scanning electron microscope (FESEM). And finally, the UV-Vis spectrophotometer is used to find the transmittance of AZOY TCO films.

Abstract: Mg films were prepared by magnetron sputtering on zirconia substrate. The surface morphology, structure and adhesion performance were determined by scanning electron microscopy (SEM), X-ray diffraction (XRD) and automatic nano scratch tester, respectively. The results show that the Mg films deposited on the substrates at 50 °C, 200 °C, 300 °C are mainly of hexagonal phase with the crystal planes (002) in highly preferred orientation that is weaken with the substrate temperature increased. After annealed at 230 °C, the quality of thin film deposited on the substrate at 50 °C can be improved as crystallizability enhanced and grain size increased. The adhesion of Mg film increases firstly, and then decreases with increasing the substrate temperatures.