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The use of high dose Co+ implantation into hydrogenated amorphous silicon (a-Si:H) deposited on glass has been investigated for the fabrication of low resistivity layers and Schottky devices without the need for high temperature thermal processing. Layer resistivities as low as 10 Ω/□ have been achieved for the as-implanted samples and 3 Ω/□ after annealing at temperatures up to 500°C. Quality Schottky devices have been fabricated for implant doses as low as 1016 Co+ cm–2.