Tags: nanowires

Description

A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.

Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.

A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...

I will discuss some recent experimental examples from my lab studying quantum coherent transport and interferometry in electrons as well as cold atoms. For example, phase coherent electron transport and interference around a cylinder realized in a nanowire of topological insulator...

Michael Freeman shares his perspective on how we should approach building a quantum computer, starting with the mathematical roots and moving through the physics to concrete engineering and materials growth challenges on which success will hinge. He will then discuss a new, enhanced,...

This talk will reveal synthesis secrets for nm-control of layer thicknesses, even for difficult alloys, which has enabled studies of magnetization reversal, magneto-elasticity, giant magnetoresistance, and spin transfer torqueswitching. These nanowires will mitigate the ITRS Roadmap’s...

IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...

This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...

PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...