A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation

Abstract

In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, ΔlD is implemented as an asymmetrical voltage controlled current source and the new ΔlDmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.

abstract = "In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, ΔlD is implemented as an asymmetrical voltage controlled current source and the new ΔlDmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.",

N2 - In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, ΔlD is implemented as an asymmetrical voltage controlled current source and the new ΔlDmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.

AB - In this paper, we present a new approach for modeling hot-electron induced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical /- V characteristics after stressing. The change in drain current, ΔlD is implemented as an asymmetrical voltage controlled current source and the new ΔlDmodel is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical model equations, the implementation scheme in BERT (BErkeley Reliability Tools) simulator and simulatior results of uni- and bidirectional circuit stressing based on the new model are presented.