Abstract : This manuscript is devoted to the physics of polaritons in two wide band gap semiconductor : ZnO and GaN. The polaritonic parameters of these materials have been accurately determined through a study which combines linear and non-linear spectroscopies continuous reflectivity, autocorrelation, photoluminescence and degenerate four-wave mixing. The interpretation of these results lead to a better understanding of the interaction processes in the semiconductor : the important role played by the polariton-LO phonon interactions in the polaritonic damping is highlighted and particularly for ZnO. This preliminary work on bulk samples is essential for a suitable study of polariton lasing in microcavities like it is presented in the second part of this manuscript. For this study, two similar microcavities, one based on ZnO and another on GaN. The photonic properties of these structures are at the state of the art : they have a good quality factor Q ≈ 1,000 and have a low photon disorder. The strong coupling regime and the polariton lasing are observed to room temperature. Finally, the establishment of phase diagrams allows to highlight the important role of LO phonons in reduction of the laser threshold.