See data sheets for some of our most popular products:

Drivers

The 5541 is a single channel high-speed driver that level shifts standard logic-level TTL into +4V at 500 mA output high and -500V at 1mA output low. The 5541 has a TTL buffer stage, a high-speed level shift, dual stage current boost. It is constructed on a 1.4” square FR4 substrate with discrete semiconductors and custom hybrid microcircuit encased in thermally conductive potting and plastic shell.

The 5542 is a single channel high-speed driver that level shifts standard logic-level TTL into +4V at 1 A output high and -1500V at 1mA output low. The 5542 has a TTL buffer stage, a high-speed level shift, dual stage current boost. It is constructed on a 1.81” x 2.81” FR4 substrate with discrete semiconductors and custom hybrid microcircuit encased in thermally conductive potting and plastic shell.

The 9535 is a high-speed differential driver designed to drive PIN diode switches in RF modulators and switches. The driver is compatible with CMOS and TTL logic and has a single inverting channels +/- 15v and up to +/-400ma. The driver is composed of silicon discrete BJT’s mounted to a thin film substrate with integral TaN resistors. Package is TO-10 hermetic glass metal construction designed for good thermal footprint at high current ideal for integration into microwave assembly which operates in harsh environments of high temperature and vibration.

The 5220 is a dual channel high-speed driver that level shifts standard logic-level TTL into outputs suitable to drive SP2T high power PIN diode RF/Microwave switches. It has a TTL buffer stage, a high-speed level shift, and a DCDC converter which generates the -100V from +50V input. It is constructed on an alumina thin film substrate with TaN resistors and discrete wire bonded silicon bipolar transistors. It is housed in a hermetic .625 x .625 22 lead metal package.

The 5224 is a dual channel high-speed driver that level shifts standard logic-level TTL into outputs suitable to drive SP2T high power PIN diode RF/Microwave switches. The 5224 has a TTL buffer stage, a high-speed level shift, and a DCDC converter which generates up to -150V from a X3 multiplier charge pump. It is constructed on a 1.5” x 1.0” FR4 substrate with hermetic hybrid mounted to it.

The 9978 is a dual channel complementary output high speed driver suitable for high power GaAs, GaN, and SiC PIN diode switches. It accepts negative CMOS logic, which uses the negative supply rail as the logic low nominal output voltage. It was designed specifically to drive industry standard GaN and GaAs PIN MMIC’s which need negative current for forward diode bias and positive voltage for back bias. Driver is capable of driving up to -30 mA so it is ideally suited for driving TGS4304 and similar devices. It is an alumina substrate assembly with gold bond pads for integration into a chip & wire construction either open or covered with alumina.

The 99191 is a driver featuring wide positive voltage range suited for driving high powered PIN diode switches. The driver is compatible with 5.0V CMOS logic and supplies output high up to +250V and low to -5V at -250mA. External current limiting resistors are required to set current. It consists of silicon BJT and MOSFET array mounted to a laminate substrate and sealed with a dam and fill process. This forms a 12×12 mm 18 pos SMT assembly.

The 9979 is a dual channel complementary output high speed driver suitable for high power GaAs, GaN, and SiC PIN diode switches. The 9979 accepts negative CMOS logic, which uses the negative supply rail as the logic low nominal output voltage. It was designed specifically to drive industry standard GaN and GaAs PIN MMIC’s which need negative current for forward diode bias and positive voltage for back bias. Driver is capable of driving up to -150mA so one driver can supply multiple switches. It is ideally suited for driving TGS4304 and similar devices. The 9979 is an alumina substrate assembly with gold bond pads for integration into a chip & wire construction, either open or optionally covered with alumina.

The MF250E3 features high speed and wide negative voltage range suited for driving all shunt PIN diode switches. The driver is compatible with 3.3/5.0 V TTL and CMOS logic and has 2 independent channels to supply each bias line with +50 ma current to forward bias the PIN diode and –V from -5 to -100V to reverse bias the PIN diode. The MF250E3 is constructed on an alumina thin film substrate with TaN resistors and discrete wire bonded silicon bipolar transistors. The driver is housed in a hermetic .375 x .625 22 lead metal package designed for integration into an integrated microwave assembly. It contains no solder and is RoHS compliant

The 99131 is a driver featuring high speed and wide negative voltage range suited for driving high power MASW series SP2T monolithic switches. The driver is compatible with 3.3/5.0 V CMOS logic and has a single logic input and 2 outputs to supply each bias line with –V up to -40V and up to +/-40 mA current. External current limiting resistors are required to set current. It consists of discrete silicon BJT bonded to a laminate substrate and sealed with a dam and fill process. This forms a 7 x 7 mm 11 pos 1.27mm pitch SMT assembly designed for integration into an integrated microwave assembly. This driver is RoHS compliant.

The 99141 is a driver featuring high speed and wide negative voltage range suited for driving high power MASW series SP2T monolithic switches. The driver is compatible with 3.3/5.0 V CMOS logic and has a single logic input and 2 outputs to supply each bias line with –V up to -40V and up to +/-40 mA current. External current limiting resistors are required to set current. The 99141 consists of discrete silicon BJT bonded to a laminate substrate and sealed with a dam and fill process. This forms a 7 x 7 mm 11 pos 1.27mm pitch SMT assembly designed for integration into an integrated microwave assembly. This driver is RoHS compliant.

The 99199 is a driver featuring high speed and wide negative voltage range suited for driving high power MASW series SP2T monolithic switches. The driver is compatible with 3.3/5.0 V CMOS logic and has a single logic input and 2 outputs to supply each bias line with –V up to -40V and up to +/-40 mA current. On-board user-modifiable output current-setting resistors and spiking caps are integrated into the unit. The 99199 consists of silicon micro components soldered to a laminate substrate and protected with a dam and fill process. This forms a 7 x 7 mm protected area within a nominal 1″ by .55″ pcb, with a fully continuous grounded gold-plated backside, designed for integration into an integrated microwave assembly. This driver is RoHS compliant.

The DF225ASM is a decoded with enable 2 channel output driver suitable for multi-throw PIN diode switches. The DF225ASM accepts TTL or CMOS logic. It was designed to supply current both from positive and negative supply as is needed in series shunt configuration. The driver will supply +/- 25 mA into a PIN diode load. The driver a .280” x .230” alumina substrate assembly with gold bond pads for integration into a chip & wire construction, either

open or optionally covered with alumina cover. It is designed for integration into a hermetic module which operates in harsh environments of high temperature and vibration. This driver contains no solder and is RoHS compliant.

The MDI2354 is a driver with 2 toggling channels featuring high speed and wide negative voltage range suited for driving TGS2354 SP2T GaN switch MMIC. The driver is compatible with 3.3/5.0 V CMOS logic and supplies 0V and –V from -5 to -50V to bias the GaN FETs. The MDI2354 is constructed on an alumina thick film substrate with thick film resistors and discrete wire bonded silicon bipolar transistors. The driver is housed in a 7mm square 44 lead .5 mm pitch QFN.

The 9857 is a driver with 2 toggling channels featuring high speed and wide negative voltage range suited for driving SP2T GaN and GaAs switch MMICs. The driver is compatible with 3.3/5.0 V CMOS logic and supplies 0V and –V (from -5 to -60V) to bias the FETs. The 9857 is constructed on an alumina thick film substrate with TaN resistors and discrete wire bonded silicon bipolar transistors. The driver is housed in a 7mm square 44 lead 0.5 mm pitch AlN QFN and is designed for integration into an integrated microwave assembly which operates in harsh environments of high temperature and vibration. The 9857 contains no solder and is RoHS compliant.

The MDI011036Q is a driver featuring high speed and wide negative voltage range suited for driving MASW-011036 SP2T terminated switch MMIC. The driver is compatible with 3.3/5.0 V CMOS logic and supplies up to 25 mA current to forward bias the diodes and –V from -5 to -30V to back bias the diodes. It is constructed on an alumina thin film substrate with TaN resistors and discrete wire bonded silicon bipolar transistors, packaged in a 7mm 44 pad QFN.

The 99110 is a driver featuring high speed and wide negative voltage range suited for driving MASW-003103 SP3T monolithic switch. The driver is compatible with 3.3/5.0 V CMOS logic and has 3 independent channels to supply each bias line with +/-40 mA current to forward bias the PIN diodes. –V can vary from -5 to -12V for high back bias operation. Current limiting resistors are accessible for easy replacement to adjust output current. It consists of silicon BJT transistors wire bonded to a laminate substrate and sealed with a dam and fill process. This forms a .5” x 1.0” 16 pad open package assembly.

The 99138 is a driver featuring high speed suited for driving high power SP3T switch using Vpos and GND. The driver is compatible with 3.3/5.0 V CMOS logic and has 3 independent channels to supply complementary outputs to bias series and shunt diodes. Driver is capable of sinking up to 75mA and supplying +40V and 50mA. External current limiting resistors are required to set current. It consists of laminate substrate and sealed with a dam and fill process. This forms a 12 x 12 mm 18 lead SMT assembly.

The 99182 is a driver featuring high speed and wide negative voltage range suited for driving high speed PIN diode switches. The driver is compatible with 5.0 V CMOS logic and has 4 independent channels outputs to supply output high and low up to +/-100 mA operating at +5V and -200V. External current limiting resistors are required to set current. It consists of silicon BJT and MOSFET array mounted to a laminate substrate and sealed with a dam and fill process. This forms a 12×12 mm 18 pos SMT assembly.

The 99139 is a driver featuring high speed and wide negative voltage range suited for driving high speed PIN diode switches. It is compatible with 3.3/5.0 V CMOS logic and has 4 independent inverting channels to supply output high and low up to +-40 mA at +5V and -5 to -40V. It consists of silicon BJT and CMOS FETs mounted on a laminate substrate and sealed with a Dam and Fill process. This forms a 6 x 6 mm 10 pos SMT assembly.

The 9829 is a driver featuring high speed and high voltage range suited for driving high Power PIN diode switches. The driver is compatible with CMOS and TTL logic and has channels each supplying complementary outputs to sink the series diode with up to +500 mA current in forward bias and the shunt diode up to 100mA. All reverse bias is +149V or Vneg-1V. It is constructed on an alumina thin film substrate with TaN resistors and discrete wire bonded silicon bipolar transistors and housed in a 12mm square 80 lead QFN.

The 9598 features silicon bipolar junction transistor switching for driving low power PIN diode switches. The driver is compatible with 3.3/5.0 V CMOS logic and has 4 independent inverting channels to supply output high and low up to +-30 mA at +-5V supplies. It consists of a monolithic silicon BJT array of NPN and PNP transistors mounted on an Alumina substrate and sealed in a hermetic alumina 6mm square 36 POS .5 pitch QFN. This surface mount driver is designed for integration into an integrated microwave assembly. It contains no solder and is RoHS compliant

The DS499ASM is a decoded with Enable 4 channel output driver suitable for multi-throw PIN diode switches. It accepts TTL or CMOS logic. It was designed to supply current both from positive and negative supply as is needed in series shunt configuration. It is also usable for all series or all shunt switching. Driver is capable of driving up to +/- 50 ma. The DS499ASM is a .200”x.270” alumina substrate assembly with gold bond pads for integration into a chip & wire construction, either open or optionally covered with alumina cover. It is designed for integration into a hermetic module which operates in harsh environments of high temperature and vibration.

The DF425ASM is a decoded with enable 4 channel output driver suitable for multi-throw PIN diode switches. The DF425ASM accepts TTL or CMOS logic. It was designed to supply current both from positive and negative supply as is needed in series shunt configuration. It is also usable for all series or all shunt switching. Driver will supply +/- 25 mA into a PIN diode load. The DF425ASM is a .411 x .411” alumina substrate assembly with gold bond pads for integration into a chip & wire construction, either open or optionally covered with alumina cover. It is designed for integration into a hermetic module which operates in harsh environments of high temperature and vibration. This driver contains no solder and is RoHS compliant.

The 9598 features silicon bipolar junction transistor switching for driving low power PIN diode switches. The driver is compatible with 3.3/5.0 V CMOS logic and has 4 independent inverting channels to supply output high and low up to +-30 mA at +-5V supplies. It consists of a monolithic silicon BJT array of NPN and PNP transistors mounted on an Alumina substrate and sealed in a hermetic alumina 6mm square 36 POS .5 pitch QFN. This surface mount driver is designed for integration into an integrated microwave assembly. It contains no solder and is RoHS compliant

The IX499E4 is a driver featuring high speed and wide negative voltage range suited for driving all shunt PIN diode switches. The driver is compatible with 3.3/5.0 V CMOS logic and has 4 independent channels to supply each bias line with up to +70 mA current to forward bias the PIN diode and –V from -5 to -100V to reverse bias the PIN diode. External current limiting resistors are required to set current. The IX499E4 is constructed on an alumina thin film substrate with TaN resistors and discrete wire bonded silicon bipolar transistors. The driver is housed in a hermetic .375 x .625 22 lead metal package designed for integration into an integrated microwave assembly. This driver contains no solder and is RoHS compliant.

The DS499ASM is a decoded with Enable 4 channel output driver suitable for multi-throw PIN diode switches. It accepts TTL or CMOS logic. It was designed to supply current both from positive and negative supply as is needed in series shunt configuration. It is also usable for all series or all shunt switching. Driver is capable of driving up to +/- 50 ma. The DS499ASM is a .200”x.270” alumina substrate assembly with gold bond pads for integration into a chip & wire construction, either open or optionally covered with alumina cover. It is designed for integration into a hermetic module which operates in harsh environments of high temperature and vibration.

The 9892 is a 6 channel driver suitable for high voltage MEMS, Piezo or PIN diode switch applications. It accepts standard TTL and CMOS logic, and level shifts them to +/ – voltage levels. The drive is specially designed to drive high voltage low current loads like MEMS, Piezo devices, and back biased PIN diodes. The 9892 is housed in an all metal gold over nickel plated hermetic housing with internal chip & wire construction, on alumina substrate and TaN resistors. It is designed for integration into a hermetic module which operates in harsh environments of high temperature and vibration.

The 9797 is a 7 channel driver suitable for high power PIN diode switch applications. The 9797 accepts standard TTL and CMOS logic, and level shifts them to +/ – voltage levels up to +/-15V and +/-40 mA out. It is specially designed to drive a series diode configuration. The 9797 is housed in an all metal gold over nickel plated hermetic housing with internal chip & wire construction, on alumina substrate and TaN resistors. It is designed for integration into a hermetic module which operates in harsh environments of high temperature and vibration.

The DS899ASM is a decoded with enable 8 channel output driver suitable for multi-throw PIN diode switches. The DS899ASM accepts TTL or CMOS logic. It was designed to supply current both from positive and negative supply as is needed in series shunt configuration. It is also usable for all series or all shunt switching. Driver will supply +/- 50 mA into a PIN diode load. The drive is a .200”x.480” alumina substrate assembly with gold bond pads for integration into a chip & wire construction, either open or optionally covered with alumina cover. It is designed for integration into a hermetic module which operates in harsh environments of high temperature and vibration.

The 9885 is a 10 channel high voltage driver that level shifts standard complementary logic into down to –50V and up to +100V suited to drive MEMS or PIN diodes. The 9885 has a TTL buffer stage, a level shift, and an output buffer. The 9885 is housed in a 28 lead hermetic gold plated metal package. Leads are available in gold plated flat leads or solder dipped formed leads. They are designed for operation in harsh environments.

The 9849 is a driver featuring extremely high speed suited for driving AlGaAs PIN diode switches. The driver is compatible with CMOS and TTL logic and has 10 channels each supplying +/- 5v and up to +/-50 ma current into PIN diode load. The 9829 is constructed on an alumina thin film substrate with TaN resistors and discrete wire bonded silicon bipolar transistors and housed in a 12mm square 80 lead QFN. This is designed for integration into an integrated microwave assembly which operates in harsh environments of high temperature and vibration.

Switches

The 6008 is an AlGaAs PIN diode reflective high speed switch covering 2 to 40 GHz. The input accepts 3.3 V CMOS logic. The switch is composed of an integral driver which converts logic levels into positive and negative current to bias the AlGaAs PIN diodes both on and off. The switch is a series shunt configuration and uses the MACOM MA4GSW4. It is constructed utilizing low loss Rogers 4350 microwave laminate, monolithic PIN diode switch elements and discrete silicon bipolar transistor driver circuitry. RF connections are made with gold wire bonds. The part is an edge wrap surface mount to be mounted directly to 4350 micro-strip//GCPW connection.

The 6011 is an AlGaAs PIN diode reflective high speed SP8T switch covering 2 to 18 GHz. The input accepts 3.3 V CMOS logic. The switch is composed of an integral driver which converts logic levels into positive and negative current to bias the AlGaAs PIN diodes both on and off. The switch is an all series configuration and uses the MACOM MA4AGSW8-1. The 6011 is constructed utilizing low loss Rogers 4350 microwave laminate, monolithic PIN diode switch elements and discrete silicon bipolar transistor driver circuitry. RF connections are made with gold wire bonds. The part is an edge wrap surface mount to be mounted directly to 4350 micro-strip//GCPW connection.

The 6020 is a GaAs FET non-reflective high speed switch covering 10 MHz to 1000 MHz. The input accepts 3.3 V CMOS logic. The switch is composed of an integral driver which converts logic levels into negative voltage to bias the GaAs FET both on and off. The switch is a series shunt configuration and is direct replacement for Alpha PN AC336-1. The 6020 is composed of alumina transmission line connected to 2 GaAs FET switch mmics with 1 mil Au wirebonds. The driver consists of discrete cmos level shift IC. All components housed in a 10 lead hermetic flatpack.

Detectors

The voltage doubler RF Detector provides a stable video pulse which is a function of the RF input power level. The RF Detector is temperature controlled to assure that the detected video magnitudes are repeatable under the specified environmental conditions. The RF Detector output will be trimmed to a predetermined level at a specified RF input power. It consists of multiple discrete chips mounted to an alumina nitride substrate which is thermally isolated from the 10 lead .250″ square flatpack. All interconnects are 1 mil Au wire for high reliability assembly designed for integration into an Integrated microwave assembly.