Abstract

Change in small‐signal gate‐to‐drain capacitance of an n‐metal–oxide semiconductorfield effect transistor as a function of gate and drain voltages before and after drain avalanche hot‐hole injection was used to study the nature of trapped charge. The results show the trapping of holes and generation of acceptor interface states at the top half of the silicon band gap. Comparison with the Pbo dangling bond model was made and the difference explained.