TSV formation overview

Citation

Abstract

Through-silicon vias (TSVs) are the foundation of today's emerging 3D integration and 2.5D Si interposer technologies. These interconnects extend through the silicon substrate, enabling vertical integration and shortened interconnect lengths for reduced size, weight, and power consumption [1,2]. It is expected that 3D and 2.5D integration will play a major role in the continued advancement of semiconductor technology, as the scaling of 2D Si microelectronics slows down and becomes increasingly more difficult [3,4]. Examples of emerging 3D integrated circuit (3D IC) applications, as demonstrated by companies such as Tezzaron and IBM, are illustrated in Figure 5.1 [5,6]. An assembled 2.5D wide I/O field-programmable gate array (FPGA) architecture, recently demonstrated by Xilinx (with TSMC and Amokor), is shown in Figure 5.2 [7].

Contact RTI Press

To contact an author, request an exam or review copy, or seek permission to use copyrighted content, contact our editorial team.

RTI uses cookies to offer you the best experience online. By continuing to use our website, you agree to the use of cookies. If you would like to know more about cookies and how to manage them please view our Privacy Policy.