Abstract: In this paper, we investigate the evolution of extended defects during a millisecond
Flash anneal after a preamorphising implant. The experimental results, supported by predictive
simulations, indicate that during the ultra-fast temperature ramp-up and rump-down occurring in a
millisecond Flash anneal, the basic mechanisms that control the growth and evolution of extended
defects are not modified with respect to the relatively slower annealing processes, such as “soak”
and “spike” Rapid Thermal Annealing. In addition, we have observed a decrease in the number of
trapped interstitials in the End-Of-Range (EOR) defects when decreasing the Ge+ amorphisation
energy from 30 keV down to 2 keV. This result is ascribed to two concomitant phenomena: (i) the
increase of the initial number of interstitials, Ni, created by the amorphisation step, when the
implant energy is decreased and (ii) the efficient interstitial annihilation at the silicon surface, whose
recombination length, Lsurf, is in the nanometer range even at the very high temperatures employed
in millisecond Flash anneals.

Abstract: Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to analyze the annealing behavior of defects and the optimistic effect of cavities to oxygen. It was found that the cavities had strong getting effect to oxygen and captured its neighboring implanted oxygen atom, and enhanced the formation of SixOy compound, thus helped shaping the buried oxide in a well defined region. In addition, it also minished the damage level in lattice. The interface between damage layer and crystalline layer was estimated to be 198 nm below surface of 6H-SiC. The implanted oxygen was pegged in the compressed and serried cavity layer, making the amorphous layer narrower than that of reference samples

Abstract: A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions (167 MeV) in wide range fluencies 4x109 –1x1011 cm-2 at temperatures 250C and 5000C are presented. After irradiation these samples were thermal annealed at 5000C for 30 min. Far-action effect at a depth of more than one order of magnitude of stopping distance was observed under Xe ions irradiation in 4H-SiC. An increase of the ion Xe fluencies increased the concentration of radiation-induced defects that resulted in rise of the compensation effect of conductivity in samples. Irradiation of 4H-SiC by Xe ions at 5000C was accompanied with "dynamic annealing" some low-temperature radiation-induced defects, which led to a partial recovery of the electrical characteristics of devices. The thermal annealing of irradiated samples led to additional partial annealing of radiation defects, which increases the radiation resource of devices based on 4H-SiC.