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The Doppler effect is the perceived change in frequency of sound emitted by a source moving relative to the observer: as a...
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The Doppler effect is the perceived change in frequency of sound emitted by a source moving relative to the observer: as a plane flies overhead, the note of the engine becomes noticeably lower, as does the siren noise from a fast-moving emergency vehicle as it passes. The effect was first noted by Christian Doppler in 1842. The effect is widely used to measure velocities, usually by reflection of a transmitted wave from the moving object, ultrasound for blood in arteries, radar for speeding cars and thunderstorms. The velocities of distant galaxies are measured using the Doppler effect (the red shift).

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Viewing the motion of Mars against the starry background: How the Ptolemy model and the Copernicus model predict the same...
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Viewing the motion of Mars against the starry background: How the Ptolemy model and the Copernicus model predict the same direction, hence the same path. (We slightly simplify--taking both models in the circular orbit approximation, as portrayed in Copernicus' illustration.

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EducaNext provides access to thousands of materials on various subjects of relevance to teaching and learning at the college...
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EducaNext provides access to thousands of materials on various subjects of relevance to teaching and learning at the college level and higher. Member institutions list their materials on the site as well as fees for those materials. You have to register (free) to use this learning object repository.

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This course is the second in a series on Electromagnetism beginning with Electromagnetism I (8.02 or 8.022). It is a survey...
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This course is the second in a series on Electromagnetism beginning with Electromagnetism I (8.02 or 8.022). It is a survey of basic electromagnetic phenomena: electrostatics; magnetostatics; electromagnetic properties of matter; time-dependent electromagnetic fields; Maxwell's equations; electromagnetic waves; emission, absorption, and scattering of radiation; and relativistic electrodynamics and mechanics.

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This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First...
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This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology. The operation of a CMOS inverter will be explained. We will explain in more detail how the transfer characteristics relate to the CMOS design. Study Goals: This course aims at a thorough understanding of the physics of advanced semiconductor devices. Students are expected to be able to explain the operation of these devices based on the design and material properties..

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In the electrical engineering, solid-state materials and the properties play an essential role. A thorough understanding of...
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In the electrical engineering, solid-state materials and the properties play an essential role. A thorough understanding of the physics of metals, insulators and semiconductor materials is essential for designing new electronic devices and circuits. After short introduction of the IC fabrication process, the course starts with the crystallography. This will be followed by the basic principle of the quantum mechanics, the sold-state physics, band-structure and the relation with electrical properties of the solid-state materials. When the material physics has been throughly understood, the physics of the semiconductor device follows quite naturally and can be understood quickly and efficiently. Study Goals: The student can 1) determine the crystal structure, the density of atoms and the Miller indices of a crystal, 2) apply Schrodinger's wave equation to various potential functions and derive a probability of finding electrons, 3) discuss the concept of energy band formation and difference of material properties in terms of the band, 4) derive the concentrations of electron and holes with a given temperature in terms of Fermi energy, and 5) can discuss drift, diffusion and scattering of carriers in a semiconductor under various temperature and impurity concentrations..

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