Abstract

GaInN/GaN light-emitting triodes having two anodes for promoting the injection of holes into the active region were fabricated and characterized. It was found that the anode-to-anode bias modulates not only the hole-injection efficiency but also the effective light-emitting area and hence the current density through the active region. As the anode-to-anode bias increases, the efficiency at the same current density increases, whereas the efficiency droop decreases substantially, indicating that the limited hole-injection efficiency is one of the dominant mechanisms responsible for the efficiency droop in GaN-based light-emitting diodes.

Received 17 September 2011Accepted 14 October 2011Published online 02 November 2011

Acknowledgments:

This work was supported in part by the Industrial Technology Development Program funded by the Ministry of Knowledge Economy (MKE, Korea), and in part by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029711).