NVE Notified of Patent Grant on Spintronic Structure

EDEN PRAIRIE, Minn., March 29 /PRNewswire-FirstCall/ -- NVE Corporation
(Nasdaq: NVEC) announced that it has been notified by the U. S. Patent and
Trademark Office that the patent titled "Magnetic Field Sensor with Augmented
Magnetoresistive Sensing Layer" will be issued today. The patent relates to
the use of an effect known as "electron spin exchange-biasing" for
low-hysteresis spin dependent tunneling (SDT) and giant magnetoresistance
(GMR) sensors. The patent is number 6,872,467 and is the grant of the
application published by the U.S. Patent and Trademark Office under number
2004-0115478.
SDT and GMR sensors applications include magnetic disk read heads and
magnetoresistive random access memory (MRAM). The invention reduces
hysteresis, which can cause errors and signal loss.
"This is an important sensor innovation," said NVE Founder and Chief
Technology Officer James M. Daughton, Ph.D. "It enables better linear
magnetic field sensors and could have wide applications."
Links to the new patent as well as NVE's other U. S. patents can be found
at the "company information" section of NVE's website ( http://www.nve.com ).
NVE is a leader in the practical commercialization of spintronics, a
nanotechnology that many experts believe represents the next generation of
microelectronics. NVE licenses its MRAM intellectual property and sells
spintronic products, including sensors and couplers, to revolutionize data
sensing and transmission.
Statements used in this press release that relate to future plans, events,
or performance are forward-looking statements that are subject to certain
risks and uncertainties including, among others, risks in the enforcement of
our patents as well as the risk factors listed from time to time in our
filings with the SEC, including our Annual Report on Form 10-KSB and other
reports filed with the SEC.