Abstract

Effects of interfaces and thermal annealing on the electrical performance of the (ONA) stacks in nonvolatile memory devices were investigated. The results demonstrated the principal role of and /metal-gate interfaces in controlling charge retention properties of memory cells. Memory devices that employ both electron and hole trappings were fabricated using a controlled oxidation of nitride surface prior to the growth, a high-temperature annealing of the ONA stack in the atmosphere, and a metal gate electrode having a high work function (Pt). These devices exhibited electrical performance superior to that of their existing analogs.