Title (de)

Title (fr)

Publication

Application

Priority

JP 31339194 A 19941216

JP 31234595 A 19951130

Abstract (en)

[origin: EP0717127A2] A plasma processing method and a plasma processing apparatus are provided in which a deposition film is formed, on a substrate (1112) serving also as an electrode, by application of high frequency power (1120) ranging from 20 MHz to 450 MHz with simultaneous application of DC voltage ranging from 30 to 300 V or -30 to -300 V and/or AC voltage (1123) ranging from 30 to 600 V to the substrate in an evacuatable reaction chamber. This method make it practicable to uniformize the plasma and the film thickness distribution independently of the discharge frequency and the applied high frequency power, thereby broadening the allowable range of conditions of the processing such as film formation and the allowable range of the design of the apparatus.