Assembly Having Adjacent Regions Of Different Semiconductor Material On An Insulator Substrate And Method Of ManufacturePaul Harvey Robinson

Filed September 8, 1966

Abstract of the Disclosure

A method of providing contiguous adjacent regions of monocrystalline
semiconductor material of different conductivity characteristics on a
monocrystalline insulator substrate, comprising growing a first epitaxial
layer of semiconductor material onto said insulator substrate, said first
layer having a given conductivity characteristic, and said semiconductor
material having substantially the same atomic spacing in its crystal
lattice as said substrate, removing certain portions of said first layer
to expose corresponding portions of said insulator substrate, growing a
second layer of monocrystalline semiconductor material onto the remaining
portions of said first layer and onto the exposed portions of said
insulator substrate, said second layer having a conductivity
characteristic different from that of said first layer, and removing the
top portion of said second layer to a depth sufficient to expose the
remaining portions of said first layer.

Figure descriptions: cover graphic

Figures 1(a)-1(d) are cut away persoective views of the imporved assembly
illustrating various stages of its fabrication according to the improved method.