Abstract

Arbitrary doping profiles with abrupt transitions have been produced in n‐type Si MBEfilms. Changes in doping level were produced with a resolution unattainable by CVDgrowth and at depths inaccessible to ion implantation. It was found, however, that films must be grown above ∼850 °C. Below that temperature doping profiles were distorted and Sb segregated strongly on the sample surface.