A leader in high-performance RF/Microwave & Microelectronic solutions, API Technologies designs, develops and manufactures one of the world’s largest selections of components and systems for use in commercial, defense, and space applications.

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Pulsed Power Amplifiers

GaN-Based Power Amplifiers for TWT Amplifier Replacement

API Technologies' line of Gallium Nitride (GaN) Power Amplifiers utilize pulsed, solid state power amplifier technology and include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz.

These power amplifiers serve as cost-effective replacements for traveling wave tube (TWT) amplifiers and offer longer life, better efficiencies and reduced size and weight than their TWT counterparts.

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1,000 Watt GaN Solid State Pulsed Power Amplifier

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Pulsed Power Amplifier Overview & Applications

GaN Solid State Pulsed Power Amplifiers

API Technologies’ Solid State Pulsed Power Amplifier products provide output power up to 1 kW and suited for wide band operation. These amplifiers utilize state of the art thermal simulation and scanning tools as well as multiple design technologies resulting in reduced size, excellent thermal performance, and improved reliability.

Utilizing state of the art GaN transistor technology, API Technologies is able to overcome limitations in TWT (traveling wave tube) with solid state pulsed power amplifiers. These solid state designs overcome the inherent problems with electron tube TWTs of limited life and single point failure susceptibility while addressing the competing high performance airborne system requirements of kilowatt power levels and compact size.

Applications Include:

Technology Comparison

The advantages for using a GaN SSPA to replace a TWT include:
1. Eliminating a system’s finite life due to cathode exhaustion in the TWT.
2. Removing concern about TWT damage at turn-on after extended storage periods.
3. Eliminating multiple single point failure sources in the TWT.
4. Providing distributed final stage health monitoring and early failure warning while maintaining system operational integrity.
5. Offering improved reliability to meet modern EW system requirements.

Although there are steps that can be taken to extend cathode life in a TWT, it cannot be eliminated, resulting in the system having a finite operating lifetime.

MTBF

SSPA uses parallel combined transistors that provide a soft fail configuration. Parallel power sources in the SSPA provide the opportunity to monitor amplifier health at multiple power stages.

TWT relies on energy transfer from the electron beam into the RF signal traveling along a helix wire. All components in the tube are potential single point hard failure sources.

RF/Microwave Power Amplifier Capabilities

Silicon MOSFET, LDMOS, GaAs, GaN, and SiC Technologies

At API Technologies, our high performance power amplifier solutions are designed with strict attention to efficiency and reliability. Products include broadband, high linearity designs, as well as high frequency, narrowband, higher power amplifiers to 1,000 watts with emphasis on size and packaging. Our engineers are experts in multiple discipline integration, including power amplifier designs with integrated switches, filters and splitters.

Utilizing state of the art GaN transistor technology, API Technologies is able to overcome limitations in TWT (traveling wave tube) with solid state pulsed power amplifiers. These solid state designs overcome the inherent problems with electron tube TWTs of limited life and single point failure susceptibility while addressing the competing high performance airborne system requirements of kilowatt power levels and compact size.