2010-01-06

At 2008’s International Electron Device Meeting, researchers at MIT’s Microsystems Technology Laboratories demonstrated silicon nanowires with twice the electron mobility — which indicates how easily current can be induced — of their predecessors. Now, the same group has shown that they can build chips in which up to five high-performance nanowires are stacked on top of each other. That would allow nanowire transistors to pass up to five times as much current without taking up any more area on the surface on the chip, a crucial step toward establishing the viability of silicon-nanowire transistors.