Abstract

Nitric oxide interaction with and surfaces is investigated by synchrotron radiation-based core level photoemission spectroscopy. At , NO exposures result in oxynitride formation, while annealing at removes oxygen leading to a nitride layer. Most interestingly, the results suggest stoichiometric layer formation at interface. This finding is of interest in limiting dopant diffusion and in defect passivation so critical at insulator/SiC interfaces.