Please use this identifier to cite or link to this item:
http://eprint.iitd.ac.in/handle/2074/1377

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Language

dc.contributor.author

Pandey, S K

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dc.contributor.author

Tiwari, Umesh

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dc.contributor.author

Raman, R

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dc.contributor.author

Prakash, Chandra

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dc.contributor.author

Krishna, Vamsi

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dc.contributor.author

Dutta, Viresh

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dc.contributor.author

Zimik, K

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dc.date.accessioned

2006-02-22T04:12:59Z

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dc.date.available

2006-02-22T04:12:59Z

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dc.date.issued

2005

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dc.identifier.citation

Thin Solid Films, 473(1), 54-57

en

dc.identifier.uri

http://eprint.iitd.ac.in/dspace/handle/2074/1377

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dc.description.abstract

The paper reports the growth of cadmium telluride (CdTe) thin films by pulsed laser deposition (PLD) using excimer laser (KrF, λ=248 nm, 10 Hz) on corning 7059 glass and SnO2-coated glass (SnO2/glass) substrates at different substrate temperatures (Ts) and at different laser energy pulses. Single crystal target CdTe was used for deposition of thin films. With 30 min deposition time, 1.8- to 3-μm-thick films were obtained up to 200 °C substrate temperature. However, the film re-evaporates from the substrate surface at temperatures >275 °C. Atomic force microscopy (AFM) shows an average grain size 0.3 μm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all pulse energies except at 200 mJ. At 200 mJ laser energy, the films show hexagonal phase. Optical properties of CdTe were also investigated and the band gap of CdTe films were found as 1.54 eV for hexagonal phase and 1.6 eV for cubic phase.