Title

Author

Abstract

"Considerable work has been done on the theory of thermal runaway and the relationship between transistor junction temperature and collector power dissipation. The first part of this thesis is a review of literature. An equation for the normalized junction temperature and its peak value is developed. From this equation, the junction temperature at the thermal runaway point for a given maximum power dissipation could be determined. The second part of this thesis is experimental. The author examined the thermal runaway points for eight different transistors in the basic common emitter class A circuit which operated under no signal DC conditions"--Abstract, page iii.