Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it will demonstrate for the first time a 16-Gigabyte (GB), very low profile (VLP) memory module at the VM World 2010 in an IBM H22V blade server, running on Intel Xeon™ 5600-series processors.

Based on 4-gigabit (Gb), 40 nanometer (nm)-class DDR3, the new modules use 18 4Gb dual-die packaged (DDP) chips, and operate on 1.35 volts of electrical current. The 16GB 40nm-class DDR3 memory provides a powerful green solution, consuming 70 percent less power than four 4GB DDR3 modules and over 40 percent less than two 8GB modules, in setting a new “standard” for lower power consumption in servers. The module’s very low profile (18.75 mm high) allows it to be used in extremely compact blade servers.

High-density, 40nm-class DDR3 will benefit data center mangers, IT directors and server farm managers who need to work with large data sets at significantly faster speeds than those offered by most servers on the market today.

“We are informing the market that not only are higher density, low-voltage memory modules going to be in greater demand very soon, but that they are already being readied for market in the latest blade servers from IBM,” said Jim Elliott, vice president, memory marketing and product planning, Samsung Semiconductor, Inc.

"High density, low-profile memory can allow for increased performance on database applications and offer advantages when it comes to power usage and savings. Samsung's module is helping us deliver up to 50% more total memory capacity on our IBM BladeCenter Servers, enabling support for more virtual machines," said Brian Sanders, director of marketing, System x, IBM. IBM is offering the module in its HS22 and HS22V blade servers.

The module consumes up to 20 percent less power than a 1.5V DDR3 and over 80 percent less than a 1.8V DDR2. Each IBM HS22V offers up to 288GBs with Samsung’s DDR3 16GB DIMMs (dual in-line memory modules), while the HS22 provides up to 192 GB/s.