Mobile Semiconductor’s proprietary design and layout techniques are applied to all architectures to optimize performance while keeping die size small.

Low voltage (LV) SRAM use high VT devices to minimize leakage currents with limited standard VT devices used when required and a dedicated retention mode providing industry leading low standby currents. The low standby current of Mobile Semiconductor’s LV memories are ideal for the IoT market.

Single-port ultra-high speed (UHS) memories use low VT and optional super-low VT devices to optimize the critical path and enhance performance while limiting static current. Ultra high speed (UHS) memories use the high performance bit cell. High speed (HS) memories use the high density bit cell.