Authors:

Priscila Gonzalez Barba(King Abdullah University of Science and Technology)

See-Hun Yan(IBM Almaden Research Center)

Luc Thomas(IBM Almaden Research Center)

Kwang-Su Ryu(IBM Almaden Research Center)

Stuart Parkin(IBM Almaden Research Center)

Aurelien Manchon(King Abdullah University of Science and Technology)

Spin-orbit-induced anisotropic transport in magnetic materials, studied for
more than a century, has recently experienced a renewed interest thanks to
the formulation of anisotropic spin scattering in terms of Berry's
curvature. Anisotropic magnetoresistance (AMR) is related to the scattering
of the transport electrons on the orbitals of localized electrons, depending
on the magnetization direction. The contributions of the interfaces on AMR
has been scarcely studied. We consider a trilayer composed of one
ferromagnetic layer sandwiched between two normal metals. The normal metals
display spin Hall effect (SHE), whereas the ferromagnetic layer polarize the
flowing current. We propose that SHE present in the top and bottom layers
might contribute to the AMR. The charge and spin currents are analyzed by
drift-diffusion equations including the role of inverse SHE as well as
anomalous Hall effect. Longitudinal and transverse spin accumulations at the
interfaces are captured through spin dependent conductance and the mixing
conductance. It is shown that the presence of a spin accumulation in the
normal metal close to the interface is transformed into a charge current
through inverse SHE hence altering the conductivity of the normal metal. The
obtained total resistivity calculation indicates its own spin accumulation
profile dependance.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2013.MAR.B15.10