We analyze the peculiarities of the magnetic dynamics of MTJs with a composite free layer. The composite magnetic layer consists of two half-ellipses separated by a non-magnetic spacer. We show that… (More)

Spin transfer torque random access memory is one of the promising candidates for future universal memory. The reduction of the current density required for switching and the increase of the switching… (More)

The theoretical predictions [1] and the experiments [2] of spin transfer switching demonstrated that the spin transfer torque random access memory (STTRAM) is one of the promising candidates for… (More)

We propose a new method of soft magnetic layer switching based on torques generated by the spin Hall effect and show a possibility of building 1Transistor-1MTJ cells with different paths for read and… (More)

The breathtaking increase of the performance of integrated circuits was made possible by the continuing size miniaturization of semiconductor devices’ feature size. The 32nm MOSFET process technology… (More)

We propose a novel spin-torque oscillator based on two MgO-MTJs with a shared free layer. By performing extensive micromagnetic modeling we found that the structure exhibits a wide tunability of… (More)