Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs sample were analyzed by x-ray and microscopic techniques. Our measurements indicate the presence of buried MnAs nanoclusters with a structural phase transition around 40 Â°C, in accord with the first-order magneto-structural phase transition of bulk MnAs. We discuss the structural behavior of these nanoclusters during their formation and phase transition, which is an important point for technological applications.

We report on measurements of the crystal structure and hole density in a series of as-grown and annealed GaMnAs samples. The measured hole densities are used to obtain the fraction of incorporated Mn atoms occupying interstitial and substitutional sites. This allows us to make a direct...

We have studied magnetic and transport properties of insulating and metallic (Ga,Mn)As layers before and after annealing. A dramatic increase of the ferromagnetic transition temperature TC by postgrowth annealing has been realized in both insulating and metallic (Ga,Mn)As. The as-grown...

A comprehensive atomistic model for arsenic in silicon which includes charge effects and is consistent with first-principles calculations for arsenic-vacancy cluster energies has been developed. Emphasis has been put in reproducing the electrical deactivation and the annealed profiles in...

Commercially pure nickel has been processed via low-strain and high-strain routes using various thermomechanical cycles with isochronal annealing from 500 to 900 Â°C. Electron backscattered diffraction was used to characterize the percentage of special boundaries (Î£3-29) formed....

The formation of the microstructure in the course of annealing of cryogenically deformed copper is investigated. It is shown that this material is very unstable, and the primary recrystallization in it is finished already after 1-h annealing at 150Â°C. The formation of the microstructure and...

We have implanted GaN with Mg ions over an energy range of 200keV to 1MeV at substrate temperatures of -150 (cold) and +300Â°C (hot). The radiation damage formation in GaN was increased for cold implants when compared to samples implanted at elevated temperatures. The increase in damage...

The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/Si3N4/Ti sample annealed at 250 Â°C for 30 min in a N2-H2 ambient gas,...

During the annealing process of cold-drawn copper with small amounts of impurities a multiple-sigmoidal behavior has been found, related to the overlapping of two or more process steps, corresponding to a simultaneous recrystallization of the copper matrix and the impurities placement processes....