Descriptive Note:

Final rept. 1 Jul 73-30 Nov 74,

Corporate Author:

Personal Author(s):

Report Date:

1975-01-01

Pagination or Media Count:

105.0

Abstract:

The report consists of two parts. Part 1 reports ion implantation studies on single crystal silicon. Post bombardment and post annealing properties of 1 MeV O implanted silicon are reported. It is shown that high temperature annealing at 1000C leads to impurity oxygen ordering and superlattice formation. The second part summarizes the work done on Gd3Ga5O12 garnet crystals. First a polishing technique is reported to obtain damage-free surface on garnet wafers. Subsequently, double crystal spectrometry is applied to measure variations in lattice constants in garnet substrates, epitaxial garnet films, and in garnet substratefilm combination after high energy 1 to 3 MeV proton implantation.