Abstract

The authors have investigated the effect of Ge concentration on the evolution of optical center ( center) in Si-implanted epitaxial at low temperature annealing. From the results of photoluminescence, the annealing behavior of center can be separated into two regimes, i.e., centers in alloy with Ge are stable, otherwise not stable. The annealing behavior of center is similar to {311} defect in . It is suggested that the dissipation of excess interstitials by outdiffusion at low temperature is one of the candidate mechanisms for the retardation of transient enhanced diffusion of boron in .

Received 27 September 2006Accepted 22 December 2006Published online 24 January 2007

Acknowledgments:

The authors would like to thank SRF for ROCS (SEM and CUG-Wuhan) support for one of the authors (J.T.) and thank R. Harding for his help in the PL experiments. This work is funded by EPSRC Grant Nos. GR/R10820 and GR/R24531/01.