Title

Author

Publication Date

10-2007

Type of Culminating Activity

Thesis

Degree Title

Master of Science in Electrical Engineering

Department

Electrical and Computer Engineering

Major Advisor

Dr. R. Jacob Baker

Abstract

A sensing technique using a voltage-mode architecture, noise-shaping modulator, and digital filter (a counter) is presented for use with cross-point MRAM arrays and magnetic tunnel junction memory cells. The presented technique eliminates the need for precision components, the use of calibrations, and reduces the effects of power supply noise. To obviate the effects of cell-to-cell variations in the array, a digital self-referencing scheme using the counter is presented. Traditional transfer function analysis techniques are applied to gain a rudimentary understanding of the sense amplifier's desired operation. Further insight results from behavioral simulations performed in Simulink. These simulations also dictate the block-level requirements for overall operation. The individual blocks are designed at the transistor level. Finally, the blocks are combined and the sense amplifier's operation (at the transistor level) is evaluated.