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IR SMT Phototransistor

Wednesday, 01 March 2006

Designed as a miniaturized surface-mount device for infrared
detection in sensing applications, OPTEK Technology
(Carrollton, TX) has developed a series of NPN silicon phototransistors
in 1206 chip packages. The devices are packaged
with a flat molded lens; the OP520 features an opaque lens to
shield it from ambient light, while the OP521 lens is water
clear, giving it a wider response range. The devices exhibit response
times of 15 μs with peak response to 880-nm light. Electrical performance of the
OP520/521 Series is characterized by collector-emitter voltages of 30 V, emitter-collector voltage
of 5 V, collector current of 20 mA and power dissipation of 75 mW at 25 °C. They are RoHS-compliant
and are compatible with high-temperature (260 °C), lead-free soldering processes. Rated
for operation from -25 °C to +85 °C, the phototransistors are designed to be mechanically and
spectrally matched to OPTEK’s OP250 series surface mount infrared LEDs.

Question of the Week

This week's Question: This month, the Federal Aviation Administration proposed long-awaited rules on the commercial use of small drones, requiring operators to be certified, fly only during daylight, and keep their aircraft in sight. The ruling,...