A mixed pattern, combining two separately formed patterns (177, 230), is formed on a single mask layer (160) and then transferred to the underlying substrate (110). The first of the separately formed patterns, (177), is formed by pitch multiplication and the second of the separately formed patterns, ...

By using conventional spacer and etch techniques, microstructure elements, such as lines and contact openings of integrated circuits, may be formed with dimensions that are mainly determined by the layer thickness of the spacer layer. In a sacrificial layer (309), an opening is formed by means of st ...

Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping prof ...

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can precisely and effectively form a pattern.SOLUTION: The method of manufacturing a semiconductor device includes a step to form first master patterns (21a and 21b) on base areas (13, 15 and 16), a step to form ...

A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask (229) on regions of the substrate. The first mask is defined using lithographic techniques. A second mask (214) is then conformably formed on one or more sidewalls of the firs ...

There is disclosed a process for etching noble metals, particularly for removing selected areas of thin films of electrically conductive noble metals, by contacting exposed areas of noble metal with a plasma that must include both fluorine and chlorine and may, optionally, also contain oxygen.

(EN) The invention relates to a method for the self-adjusted reduction in size of structures in a layer sequence, whereby at least one metal layer is applied on a substrate, the structure to be reduced in size being limited by the at least one metal layer. Said method is characterized in that the me ...

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...

A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to g ...