AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C).
By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high
temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by
DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of
ScxAl1-xN.