Abstract

First demonstration of cross phase modulation based interferometric switch is presented in silicon on insulator waveguides. By using Mach-Zehnder interferometric configuration we experimentally demonstrate switching of CW signal ~25 nm away from the pump laser. We present the effect of free carrier accumulation on switching. Additionally, we theoretically analyze the transient effects and degradations due to free carrier absorption, free carrier refraction and two photon absorption effects. Results suggest that at low peak power levels the system is governed by Kerr nonlinearities. As the input power levels increase the free carrier effects becomes dominant. Effect of free carrier generation on continuum generation and power transfer also theoretically analyzed and spectral broadening factor for high input power levels is estimated.

Total amount of phase shift for two different free carrier lifetime values induced by a) the index change due to free carrier accumulation and b) the Kerr nonlinearity. T=pulse period and τeff=free carrier life time.

Total amount of phase shift induced by the index change due to free carrier accumulation and the Kerr nonlinearity in the absence of free carrier accumulation. 180° phase shift can be obtained by Kerr nonlinearity at moderate power levels and with minimal free carrier effect.

Power transfer function in the presence of pulse steepening. Free carrier absorption causes higher attenuation at the trailing edge of the pulse and average throughput reduces On the other hand peak power level shows saturated behavior due to TPA.