Fabrication process for RSFQ/qubit systems

Abstract

We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards
integration of RSFQ and qubit circuits. The emphasis is to provide a process
enabling RSFQ operation at sub-100 mK temperatures required for qubit
operation. In this paper we describe the main properties of the process. We
also present experimental characterization data and in particular introduce a
method of determining the critical current density by wafer level room
temperature measurements.

abstract = "We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.",

N2 - We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards
integration of RSFQ and qubit circuits. The emphasis is to provide a process
enabling RSFQ operation at sub-100 mK temperatures required for qubit
operation. In this paper we describe the main properties of the process. We
also present experimental characterization data and in particular introduce a
method of determining the critical current density by wafer level room
temperature measurements.

AB - We have developed a Nb/Al/AlO‡/Nb trilayer process aimed towards
integration of RSFQ and qubit circuits. The emphasis is to provide a process
enabling RSFQ operation at sub-100 mK temperatures required for qubit
operation. In this paper we describe the main properties of the process. We
also present experimental characterization data and in particular introduce a
method of determining the critical current density by wafer level room
temperature measurements.