Abstract

Undoped and Nb-doped Ba0.7Sr0.3TiO3 (BST) thin films were fabricated by RF magnetron sputtering. The bipolar resistance switching behaviors of both thin films were observed with the stable endurance by DC voltage sweep. Nbdoping in BST influenced the defect distribution and improved the uniformity of resistance switching random access memory (ReRAM) properties. The defect distribution was strongly related to the resistance switchingproperties and the decrease in the grain size caused by Nbdoping made the oxygen migration more efficient. The oxygen migration in BST was assisted by Nbdopants which increased the concentration of the non-lattice oxygen in BST layer during ReRAM operation.