Abstract

Single nanowire metal-oxide-semiconductor field-effect transistors(MOSFETs) were fabricated using nanowires grown by site selective molecular-beam epitaxy. When measured in the dark at , he depletion-mode transistors exhibit good saturation behavior, a threshold voltage of , and a maximum transconductance of order . Under ultraviolet illumination, the drain–source current increase by approximately a factor of 5 and the maximum transconductance is . The channel mobility is estimated to be , which is comparable to that reported for thin film enhancement mode MOSFETs, and the on∕off ratio was in the dark and under UVillumination.

Received 27 May 2004Accepted 27 July 2004Published online 24 September 2004

Acknowledgments:

The work at UF is partially supported by AFOSR grant under grant number F49620-03-1-0370, by the Army Research Office under grant no. DAAD19-01-1-0603, the Army Research Laboratory, AFOSR (F49620-02-1-0366, G. Witt, and F49620-03-1-0370), NSF(CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 10-316 monitored by Mr. Daniel E. Fitch, and the National Science Foundation (DMR 0400416, DMR-0305228, Dr. L. Hess).