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Presents research which showed that a composition-spread technique allows for the efficient evaluating of materials with both a high dielectric constant and a high breakdown field. Application of approach to the Zr--Sn--Ti--O system; Better thin-film dielectrics resulting; Applications for...

Key properties of PbSrSe thin films grown by molecular beam epitaxy have been studied for mid-infrared optoelectronic device applications. Detailed knowledge of the material parameters for the device design is required. The material parameters considered are: temperature-dependent band gaps,...

Examines the structural and electrical properties of fabricated polycrystalline thin films. Application of metalorganic solution deposition technique in the fabrication process; Depiction of thin film dielectric and insulating properties; Applicability of tantalum oxide thin film in high...

Improved dielectric properties of lead zirconate titanate (PZT) films deposited on a variety of foils using buffer layers are reported. Foils include titanium, stainless steel, and nickel with LaNiO[sub 3](LNO) buffer layers which were prepared by sol-gel processing. High dielectric constant...

CdS thin films were deposited by simple and easy successive ionic layer adsorption and reaction (SILAR) method. Prepared thin film were annealed at 250Â°c in air for 30 minutes. The crystallographic structure and the crystallite size were studied by the X-ray diffraction (XRD) pattern and...

We have prepared an all-solid-thin film electrochromic device (ECD), consisting of layers ITO / NiO / ZrO2 / WO3 / ITO using the PVD method. The WO3 is used as an electrochromic layer, NiO as an ion-storage layer, and ZrO2 as a solid electrolyte layer in the all-solid-thin film ECD. The optical...

The characteristics of a spin-wave optoelectronic microwave oscillator are experimentally studied for the first time. The oscillator represents a ring structure the microwave circuit of which contains a spinwave delay line based on the yttrium-iron-garnet film. The optical part of the oscillator...

A series of heteroepitaxial Ba[sub x]Sr[sub 1-x]TiO[sub 3] thin films with composition x=0.50 were deposited on (001) MgO substrates by pulsed-laser deposition. The thickness of the films was varied from 14 to 500 nm to produce a systematically decreasing level of in-plane tensile stresses. The...