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Abstract

An electron temperature gradient in a semiconductor can be employed for microwave generation and switching.

Country

United States

Language

English (United States)

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Semiconductor Device

An electron temperature gradient in a semiconductor can be employed for
microwave generation and switching.

This article describes a structure wherein an electron temperature gradient
results in diffusion of hot electrons from high resistivity regions to low resistivity
regions which in turn produces a runaway situation of increasing resistance so
that under appropriate field distribution and temperature gradient a useful
negative conductance regime will be present. Such a structure is shown in Fig. 1.

The structure of Fig. 1 is a semiconductor film of moderate
doping on a semi-insulating substrate. The film is structured to
form thick (d(1)) and thin (d(2)) regions with longitudinal length
l(1) and l(2), respectively. Since the conductance in the l(1) d(1)
region is larger than that in the l(2) d(2) region, the electron
temperature is higher in the l(2) d(2) region. This is shown in Fig.
2 when a longitudinal field is applied.

If the length l(2) is sufficiently small (approximately

2 lambda (D) (see original)
in an electric field of approximately 10/5/V/cm (for the material
Si), a negative differential conductance, due to the above described
differential conductance, due to the above-described effects, is
present.

The structure can be fabricated with silicon on a sapphire substrate with
appropriate high resolution (such as E-beam) lithographic techniques for l(1),
l(2), d(1), d(2) definitions.