Product Overview

Achieving bandwidth speeds up to 3.2Gbps, Samsung DDR4 delivers higher performance at a higher speed than both DDR2 and DDR3. Compared to DDR3L (low power DDR3), Samsung DDR4 shows an overall improvement in performance in every DIMM and a performance that is more than 40 percent better at 1 DIMM per channel.

A major decrease in voltage and the improved I/O power efficiency of DDR4 synchronous dynamic RAM (SDRAM) translates into significant cost savings. According to Samsung internal testing, DDR4 boasts a continuous working voltage of 1.2 V, a voltage that is 11 percent lower than the 1.35 V consumed by DDR3L. By adopting POD (Pseudo Open Drain) for data transmission, Samsung DDR4's input/output (I/O) power consumption is reduced by 50 percent compared to the previously-used SSTL (Stub Series Terminated Logic) of DDR3L. Overall, Samsung DDR4 shows a Performance/watt level more than 20 percent higher than DDR3L.