Author

Wang, Hong

Date of Issue

2007

School

School of Electrical and Electronic Engineering

Abstract

In this project, modification of our current low frequency noise setup by including a
probe station to carry out on-wafer low frequency (LF) noise measurement was
proposed and performed. Low frequency noise measurements were performed using different devices such as InP-based heterojunction bipolar transistors (HBTs) and InP/InGaAs metamorphic HBTs on GaAs. The study enables us to gain a fundamental understanding on mechanism of the low frequency noise in these novel devices. The correlations between LF noise and device material quality and reliability were investigated.