We at Army Research Laboratory (ARL) have developed 2xD light emitting device (LED) arrays for possible application in infrared (IR) scene projection experiments. These LEDs emit light in the 3-4 μm wavelength region with peak at 3.75 μm when operate at room temperature. The epitaxial structure for LED was grown on GaSb substrate by molecular beam epitaxial (MBE) technology. Mesa sizes ranging from 30-100 μm diameters were used in the device fabrication. By comparing with radiation from blackbody source, we found that the brightness temperature of the infrared LED is in the range of 300-600 K. We obtained very good uniformity in device current and voltage (I-V) characteristics. This paper discusses the LED array design, fabrication and evaluation results.