We report the achievement of a semiconductor tube laser that can operate in the optical communication wavelength range for applications in the emerging Si-photonics. Such nanoscale devices are fabricated from self-organized InAs/InGaAsP quantum dotnanomembranes through a strain-driven self-rolling mechanism using standard photolithography process. Under continuous wave optical pumping, the devices exhibit an ultralow lasing threshold of ∼1.26 μW at 82 K, with multiple emission wavelengths in the S band of optical communications. The spontaneous emission coupling factor and Purcell factor are estimated to be ∼0.30 and ∼4.8, respectively.

Publication date

2012-07-17

Language

English

Affiliation

Information and Communication Technologies; National Research Council Canada