Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST)

抄録

Ternary compound Ti<SUB>3</SUB>SiC<SUB>2</SUB> was successfully synthesized by pulse discharge sintering the powder mixture of TiH<SUB>2</SUB>/SiC/C. When the molar ratio of the starting powder mixture was selected to be TiH<SUB>2</SUB>:SiC:C=2.8:1:0.8, single-phase dense Ti<SUB>3</SUB>SiC<SUB>2</SUB> was synthesized at 1400°C for 20 min. The grain size of synthesized Ti<SUB>3</SUB>SiC<SUB>2</SUB> strongly depends on the sintering temperature. The synthesis mechanism of Ti<SUB>3</SUB>SiC<SUB>2</SUB> was revealed to be completed via the reactions among the intermediate phases of Ti<SUB>5</SUB>Si<SUB>3</SUB>C<SUB>x</SUB> and TiC. It is found that dehydrogenation was accelerated by the synthesis reaction during sintering progress. Compared with Ti/SiC/C powder mixture, the TiH<SUB>2</SUB>/SiC/C mixed powder is favorable for synthesizing Ti<SUB>3</SUB>SiC<SUB>2</SUB> through PDS technique.