Abstract

p+‐n shallow junction fabrication using on‐axis Ga implantation into crystalline and preamorphized Si, in conjuction with rapid thermal annealing, is reported. The implants are performed at energies of 50 and 75 keV for doses of 1 and 3.5×1015/cm2. Taking advantage of the short Ga projection range, low critical dosage (2×1014/cm2) needed for amorphizing the implanted layer, and a low anneal temperature (550–600 °C) required to induce solid phase epitaxial regrowth and activate the Ga dopants in excess of its maximum solidsolubility in Si, a shallow junction at a depth of 100 nm and with sheet resistance of 150 Ω/⧠ was obtained using 75 keV Ga implantation at a dose of 1×1015/cm2. The sheet resistance of the Ga‐implanted layer can be optimized by adjusting the anneal temperature and time.