Category | November

The Status of the GaNpowIR™ platform at International Rectifier The availability of new power electronics based on commercially viable wide band gap semiconductors such as GaN on silicon power devices fabricated in silicon foundries, provides the required performance to cost value proposition to enable lower economic barrier to adoption for energy efficient [...]

650V IGBT4 the optimized device for reduced EMI and low ΔV The trend of the last years of all power semiconductor manufacturers to increase the switching speed of the devices offers the benefit of reduced switching losses and the possibility to improve the efficiency of the system. These power devices require optimized [...]

Developing a new platform for high voltage switching A major issue for the 10 kV IGCT has been the limited turn-off capability. By introducing the new HPT technology a 10 kV IGCT is in development that has a switching capability comparable with the capability of former IGCTs with half the voltage rating. [...]

By Dr. Thierry Meynard, University of Toulouse, LAPLACE - CIRTEM, Technical Chairman of the ECPE Workshop With more than 165 participants, the ECPE Workshop held in Västerås (Sweden) has confirmed the growing attention paid to multilevel conversion systems (Figure 1). Initiated by ABB Corporate Research (Dr. Demetriades and Dr. Tenca) the seminar has [...]

Several important parameters need to be considered When microprocessor systems have to restart, a dedicated reset IC can improve system reliability by ensuring proper initialization of the processor regardless of the input voltage conditions. By Eric Schlaepfer, Senior Member of the Technical Staff, Applications Maxim Integrated Products Inc., Sunnyvale, CA A [...]

Through-out its voltage / current characteristic, the Varistor is actually conducting Varistors offer a cost effective solution for the protection over Solar Invertors against over-voltages. Thermally Protected Varistors from TDK-EPC can help to reduce down times and to optimize returns on investment. By David Connett, Director IC Reference Design, EPCOS AG. A [...]

Both gate and Miller capacitances are significantly lower As enhancement mode gallium-nitride-on-silicon transistors (eGaNTM) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature [...]

Automotive Using Ethernet as Physical Layer Data Bus Ethernet has been officially be added to the list of automotive networks, such as CAN, LIN, FlexRay and MOST. But why did Ethernet make the list and for what specific automotive applications? Most important of all, can it really meet the challenges of Automotive? [...]

17 mm technology: Rectifiers, IGBTs and drivers for motor control The IGBT is seen as the power semiconductor solving problems, combining the advantages of bipolar and field effect technology, thus making it easy to control even large power converters. Modern solutions are realized in 17 mm stack height, which increases the clearance [...]

Integrated solution for two output channels simplifies design and enhances reliability The device, the VNI2140J, integrates on-chip two 45V Power MOSFETs channels (80mOhm typical Rds(on) at 25 degrees Celsius) together with logic, driver, protection, and diagnostic. The VNI2140J is housed in the tiny Jedec standard PSSO-12 lead power package. By Giuseppe Di [...]