Abstract

The modification of the electronic properties of InSb by implantation of low-energy N-2(+) ions and annealing have been investigated. A non-uniform electron density depth profile is observed in the near-surface region. Detailed measurements of the conduction-band electron-plasma frequency as a function of temperature combined with carrier statistics reveal that the electron concentration profile in the near-surface region cannot be explained solely by donor-type defects induced by the nitrogen implantation. However, these experimental observations can readily be explained in terms of InNxSb1-x band structure, the different distributions of damage-induced donor defects, and the acceptor-type nitrogen. (C) 2004 American Institute of Physics.