Abstract

The AlGaN/GaN HFET project at QinetiQ
has the capability to grow high quality layers using
MOVPE, fabricate HFETs with 0.8 and 0.25µm gate length
and fabricate amplifiers. Here we present recent work on
topics as diverse as X-ray determination of aluminium
concentration, 0.25Ohm.mm Ohmic contacts, measurement
of saturated velocity, current slump and a 57W hybrid
amplifier.

Abstract

The AlGaN/GaN HFET project at QinetiQ
has the capability to grow high quality layers using
MOVPE, fabricate HFETs with 0.8 and 0.25µm gate length
and fabricate amplifiers. Here we present recent work on
topics as diverse as X-ray determination of aluminium
concentration, 0.25Ohm.mm Ohmic contacts, measurement
of saturated velocity, current slump and a 57W hybrid
amplifier.