Citation and License

Nanoscale Research Letters 2012, 7:244
doi:10.1186/1556-276X-7-244

Published: 6 May 2012

Abstract

GaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully
transferred onto silicon substrates using a double-transfer technique. Compared with
the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement
in the light extraction and thermal dissipation, which should be mainly attributed
to the removal of sapphire and the good thermal conductivity of silicon substrate.
Benefited from the optimized wafer bonding process, the transfer processes had a negligible
influence on electrical characteristics of the transferred LEDs. Thus, the transferred
LEDs showed a similar current–voltage characteristic with the conventional LEDs, which
is of crucial importance for practical applications. It is believed that the double-transfer
technique offers an alternative way to fabricate high performance GaN-based thin-film
LEDs.