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Abstract:

A surface-emitting laser device includes a lower reflector, a resonator
structure having an active layer and an upper reflector on an inclined
substrate, and an emission region emitting laser light enclosed by an
electrode. The upper reflector includes a confinement structure having a
current passing region enclosed by an oxide containing at least an oxide
generated as a result of partial oxidation of a layer containing aluminum
subject to selective oxidation, and a dielectric film formed within the
emission region, the dielectric film at least enclosing a partial region
including a center of the emission region. In viewing from a direction
orthogonal to the emission region, a center of a region enclosed by the
dielectric film is located at a position distant from the center of the
emission region based on a size of the confinement structure relative to
a direction orthogonal to an inclined axis of the inclined substrate.

Claims:

1. A surface-emitting laser device comprising: a lower reflector, a
resonator structure having an active layer and an upper reflector layered
on an inclined substrate; and an emission region enclosed by an
electrode, the emission region being configured to emit laser light,
wherein the upper reflector includes a confinement structure having a
current passing region enclosed by an oxide, the oxide containing at
least an oxide generated as a result of partial oxidation of a layer
containing aluminum subject to selective oxidation, and a dielectric film
formed within the emission region, the dielectric film at least enclosing
a partial region including a center of the emission region, and wherein
in viewing from a direction orthogonal to the emission region, a center
of a region enclosed by the dielectric film is located at a position
distant from the center of the emission region based on a size of the
confinement structure relative to a direction orthogonal to an inclined
axis of the inclined substrate.

2. The surface-emitting laser device as claimed in claim 1, wherein the
dielectric film has a ring shape in viewing from the direction orthogonal
to the emission region.

3. The surface-emitting laser device as claimed in claim 1, wherein the
dielectric film has a ring shape that is split at least at one place in
viewing from the direction orthogonal to the emission region.

4. The surface-emitting laser device as claimed in claim 3, wherein the
dielectric film has the ring shape that is split at two mutually facing
places in a direction parallel to the inclined axis of the inclined
substrate in viewing from the direction orthogonal to the emission
region.

5. The surface-emitting laser element as claimed in claim 1, wherein an
overlapped part of the dielectric film and the current passing region is
present on each of a first side and a second side of an axis direction
orthogonal to the inclined axis of the inclined substrate relative to a
center of the current passing region in viewing from the direction
orthogonal to the emission region, and an area of the overlapped part on
the first side differs from an area of the overlapped part on the second
side.

6. The surface-emitting laser device as claimed in claim 5, wherein a
direction from the center of the current passing region to the first side
in the axis direction corresponds to an inclined direction, and the area
of the overlapped part on the first side is larger than the area of the
overlapped part on the second side.

7. The surface-emitting laser device as claimed in claim 1, wherein an
optical thickness of the dielectric film is an odd multiple of an
oscillation wavelength/4.

8. The surface-emitting laser device as claimed in claim 1, wherein the
dielectric film is made of any of SiNx, SiOx, TiOx, and SiON.

9. An optical scanner device for optically scanning a scanning surface
with emitting light, the optical scanner device comprising: a light
source including the surface-emitting laser device as claimed in claim 1;
a deflector configured to deflect light emitted from the light source;
and a scanning optical system configured to converge the light deflected
by the deflector onto the scanning surface.

10. An image forming apparatus comprising: at least one image carrier;
and the optical scanner device as claimed in claim 9 configured to scan
light modulated based on image information relative to the at least one
image carrier.

Description:

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The disclosures herein generally relate to a surface-emitting laser
device, an optical scanner device and an image forming apparatus, and
more particularly to a surface-emitting laser device capable of
oscillating laser light in a direction orthogonal to a substrate, an
optical scanner device having such a surface-emitting laser device, and
an image forming apparatus having such an optical scanner device.

[0003] 2. Description of the Related Art

[0004] A vertical cavity surface-emitting laser (VCSEL) device is a
semiconductor laser device that oscillates laser light in a direction
orthogonal to a substrate. The VCSEL generally has features such as (1) a
low price, (2) low power consumption, (3) high performance with a smaller
size and (4) easy to integrate two-dimensionally compared to an edge
emitting laser (EEL) that oscillates laser in a direction parallel to a
substrate.

[0005] The surface-emitting laser device (VCSEL) includes a confinement
structure to enhance electric current injecting efficiency. As an example
of such a confinement structure, a confinement structure obtained by
selectively oxidizing aluminum-arsenic (AlAs) (hereinafter also called an
"oxide confinement structure" for convenience) is frequently used.

[0006] The oxide confinement structure is obtained by forming a mesa of a
predetermined size having a layer subject to selective oxidation
(hereinafter also called a "selective oxidation layer") that is formed of
a p-AlAs layer exposed from sides of the mesa, and subsequently placing
the mesa under a high-temperature water-vapor atmosphere to selectively
oxidize Al from sides of the mesa, thereby causing an unoxidized region
to remain in the selectively oxidized p-AlAs layer (i.e., the selective
oxidation layer) near the center of the mesa. This unoxidized region
corresponds to a drive current passing region (current injecting region)
of a surface-emitting layer device. Thus, it may be easy to confine the
electric current.

[0007] The refractive index of the oxidized Al (AlxOy) layer in the oxide
confinement structure is approximately 1.6, which is lower than the
refractive index of a semiconductor layer. Hence, the refractive index
difference is formed in a transverse direction within a resonator
structure to confine the laser light in the center of the mesa, which may
eventually improve luminous efficiency of the laser light. As a result,
the surface-emitting layer (VCSEL) device may be capable of implementing
excellent properties such as a low threshold current and high luminous
efficiency.

[0008] Examples of an applied field of the VCSELs include a light source
for an optical recording system in a printer (oscillation wavelength: 780
nm band), a light source for recording in an optical disk device
(oscillation wavelengths: 780 nm band, 850 nm band), and a light source
for an optical transmission system such as a local area network (LAN)
utilizing optical fibers (oscillation wavelengths: 1.3 μm band and 1.5
μm band). Further, the VCSELs may also be applied as a light source
for optical transmission between boards, within a board, between chips in
a large-scale integrated circuit (LSI), or within the chip of the
integrated circuit.

[0009] In the aforementioned examples of the applied field of the VCSELs,
light emitted from the VCSEL (hereinafter also simply called "emission
light") may preferably be directed in a certain polarization direction
and preferably have a circular cross-section, and preferably be capable
of emitting light orthogonal to a reference plane.

[0010] The prospective method for adjusting a polarization direction at
present may be the VCSEL that employs an inclined substrate. Employing
the inclined substrate in the VCSEL may make a crystal structure
asymmetric relative to a main surface of the substrate. This may
introduce anisotropy into optical gain. As a result, it may be possible
to align the polarization in a specific direction in which the optical
gain increases.

[0011] For example, Japanese Patent No. 4010095 (hereinafter referred to
as "Patent Document 1") discloses a surface-emitting semiconductor laser
having a relatively simple configuration that is capable of controlling
polarization of laser light in a certain direction, and capable of
oscillating laser light with low threshold current to exhibit high
output. The surface-emitting semiconductor laser disclosed in Patent
Document 1 includes a main surface of a semiconductor substrate that is
crystallographically inclined at an angle range of 15 to +5 degrees in a
[1 1 0] direction based on a [1 0 0] direction relative to a surface
having a crystal face orientation equivalent to a [1 0 0] plane and
includes an active layer formed of GaAs/AlGaAs semiconductor. The
disclosed surface-emitting semiconductor laser further includes a
selective oxidation layer obtained by oxidizing, from its peripheral
part, a macroscopically smooth layer having a cross sectional outer
circumferential shape without singularity when cut in parallel with the
main surface of the semiconductor substrate.

[0012] Further, Japanese Laid-open Patent Publication No. 2010-153768
(hereinafter referred to as "Patent Document 2") discloses a
surface-emitting laser device capable of exhibiting a stable polarization
direction while controlling oscillation of a high-order transverse mode.
The surface-emitting laser device disclosed in Patent Document 2 includes
a p-side electrode formed around an emission region of an emission
surface emitting laser light, and a transparent dielectric film formed in
a peripheral region within the emission region to lower reflectivity of
the peripheral region less than reflectivity of a central part of the
emission region. In the surface-emitting laser device having the above
configuration, the region having the low reflectivity within the emission
region has anisotropy in two mutually orthogonal directions.

[0013] In addition, Japanese Patent No. 3566902 (herein after referred to
as "Patent Document 3") discloses a surface-emitting laser device having
a transparent layer relative to an oscillation wavelength of an
oscillation laser formed by coating a part of an internal surface of an
opening of an upper electrode. In the surface-emitting laser device, the
thickness of the transparent layer is (2i+1)/4n times (n represents a
refractive index of the transparent layer, i represents an integer) of
the oscillation wavelength of the oscillation laser.

[0014] Moreover, Japanese Laid-open Patent Publication No. 2011-009693
(hereinafter referred to as "Patent Document 4") discloses a method for
fabricating a surface-emitting laser device. The method includes layering
a transparent dielectric layer on an upper surface of a layered product
before forming of a mesa structure, forming a first resist pattern
including a pattern regulating an outer shape of the mesa structure on
the upper surface of the dielectric film and a pattern protecting a
region corresponding to one of a high reflective region and a low
reflective region of an emission region, etching the dielectric layer
utilizing the first resist pattern as an etching mask, and forming a
second resist pattern protecting a region corresponding to the entire
emission region.

[0019] In view of various kinds of applications of the surface-emitting
laser device, it is important for the surface-emitting laser device to
emit laser light in a direction orthogonal to a reference plane (e.g., an
upper surface of a package). Note that in the present application, an
emitting direction of laser light indicates a direction in which the
emitted laser light exhibits the greatest radiant intensity (see FIGS. 24
to 25B).

[0020] FIG. 26A illustrates the frequency of emitting directions of laser
light emitted from surface-emitting laser devices each including an
inclined substrate having an inclined axis in an x-axis direction when
viewed from the y-axis direction, and FIG. 26B illustrates the frequency
of emitting directions of laser light emitted from the surface-emitting
laser devices each including an inclined substrate having an inclined
axis in an x-axis direction when viewed from the x-axis direction. As
illustrated in FIGS. 26A and 26B, a large number of devices emit laser
light in a direction orthogonal to a reference plane when viewed from the
y-axis direction whereas a large number of devices emit laser light being
inclined to a direction orthogonal to the reference plane when viewed
from the x-axis direction.

[0021] Hence, the emitting directions of the laser light emitted from the
surface-emitting laser devices employing the inclined substrate may emit
laser light slightly inclined relative to the direction orthogonal to the
reference plane. It may be difficult for the surface-emitting laser
devices emitting laser light slightly inclined relative to the direction
orthogonal to the reference plane to exhibit desired laser properties
with stability.

SUMMARY OF THE INVENTION

[0022] It is a general object of at least one embodiment of the present
invention to provide a feeding device, an image forming apparatus capable
of transferring various types of tab-attached sheets without replacing
the end fence, which may substantially eliminate one or more problems
caused by the limitations and disadvantages of the related art.

[0023] According to one embodiment, there is provided a surface-emitting
laser device that includes a lower reflector, a resonator structure
having an active layer and an upper reflector layered on an inclined
substrate; and an emission region enclosed by an electrode, the emission
region being configured to emit laser light. In the surface-emitting
laser device, the upper reflector includes a confinement structure having
a current passing region enclosed by an oxide, the oxide containing at
least an oxide generated as a result of partial oxidation of a layer
containing aluminum subject to selective oxidation, and a dielectric film
formed within the emission region, the dielectric film at least enclosing
a partial region including a center of the emission region. Further, in
the surface-emitting laser device, in viewing from a direction orthogonal
to the emission region, a center of a region enclosed by the dielectric
film is located at a position distant from the center of the emission
region based on a size of the confinement structure relative to a
direction orthogonal to an inclined axis of the inclined substrate.

[0024] According to one embodiment, there is provided an optical scanner
device for optically scanning a scanning surface with emitting light. The
optical scanner device includes a light source including the
surface-emitting laser device; a deflector configured to deflect light
emitted from the light source; and a scanning optical system configured
to converge the light deflected by the deflector onto the scanning
surface.

[0025] According to one embodiment, there is provided an image forming
apparatus that includes at least one image carrier; and the optical
scanner device configured to scan light modulated based on image
information relative to the at least one image carrier.

[0026] Additional objects and advantages of the embodiments will be set
forth in part in the description which follows, and in part will be
obvious from the description, or may be learned by practice of the
invention.

[0027] It is to be understood that both the foregoing general description
and the following detailed description are exemplary and explanatory only
and are not restrictive of the invention, as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Other objects and further features of embodiments will be apparent
from the following detailed description when read in conjunction with the
accompanying drawings, in which:

[0029]FIG. 1 is a diagram illustrating a schematic configuration of a
color printer according to an embodiment;

[0030]FIG. 2 is a diagram illustrating an optical scanner device in the
color printer in FIG. 1;

[0031]FIG. 3 is a diagram illustrating the optical scanner device in the
color printer in FIG. 1;

[0032]FIG. 4 is a diagram illustrating the optical scanner device in the
color printer in FIG. 1;

[0033]FIG. 5 is a diagram illustrating the optical scanner device in the
color printer in FIG. 1;

[0048]FIG. 19 is a diagram illustrating the method for fabricating the
surface-emitting laser array;

[0049] FIG. 20 is a diagram illustrating a comparative example;

[0050]FIG. 21 is a diagram illustrating a modified example of a
dielectric film;

[0051]FIG. 22 is a diagram illustrating a relationship between a Δy
in the modified example of the dielectric film and an emitting direction;

[0052]FIG. 23 is a diagram illustrating a relationship between a
dimension of a current passing region in a y-axis direction and an
emitting direction within a yz plane when a center of an inner diameter
of the dielectric film matches a center of the emission region;

[0053]FIG. 24 is a diagram illustrating an emitting direction of laser
light emitted from the surface-emitting laser device;

[0054] FIGS. 25A and 25B are diagrams each illustrating an emitting
direction of laser light emitted from the surface-emitting laser device;
and

[0055] FIGS. 26A and 26B are diagrams each illustrating the frequency of
emitting directions of laser light emitted from the surface-emitting
laser device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0056] Preferred embodiments are described below with reference to the
accompanying drawings.

[0057] In the following, preferred embodiments are described with
reference to FIGS. 1 through 20. FIG. 1 is a schematic diagram
illustrating a configuration of a color printer 2000 according to an
embodiment.

[0059] Note that in the following descriptions, an x-axis direction is
defined as a direction along a longitudinal direction of each of the
photoreceptor drums, and a z-axis direction is defined as a direction
along an array direction (or arrangement direction) of the four
photoreceptor drums in an xyz three-dimensional orthogonal coordinate
system.

[0060] The communication control device 2080 controls bidirectional
communications with a host apparatus (such as a personal computer) via a
network or the like.

[0061] The printer control device 2090 includes a contral processing unit
(CPU), a read-only memory (ROM) storing programs written in codes
decodable by the CPU and various types of data utilized for executing the
programs, a random access memory (RAM) serving as a working memory, an
analog-to-digital (AD) converter circuit and the like. The printer
control device 2090 reports multicolored image information (black image
information, cyan image information, magenta image information and yellow
image information) received from the host apparatus via the communication
control device 2080 to the optical scanner device 2010.

[0062] The photoreceptor drum 2030a, the charging device 2032a, the
developing roller 2033a, the toner cartridge 2034a and the cleaning unit
2031a are utilized as an assembly, which composes an image forming
station configured to form a black image (hereinafter simply called a "K
station" for convenience).

[0063] The photoreceptor drum 2030b, the charging device 2032b, the
developing roller 2033b, the toner cartridge 2034b and the cleaning unit
2031b are utilized as an assembly, which composes an image forming
station configured to form a cyan image (hereinafter simply called a "C
station" for convenience).

[0064] The photoreceptor drum 2030c, the charging device 2032c, the
developing roller 2033c, the toner cartridge 2034c and the cleaning unit
2031c are utilized as an assembly, which composes an image forming
station configured to form a magenta image (hereinafter simply called a
"M station" for convenience).

[0065] The photoreceptor drum 2030d, the charging device 2032d, the
developing roller 2033d, the toner cartridge 2034d and the cleaning unit
2031d are utilized as an assembly, which composes an image forming
station configured to form a yellow image (hereinafter simply called a "Y
station" for convenience).

[0066] Each of the photoreceptor drums 2030 has a photosensitive layer on
its surface. That is, the surfaces of the photoreceptor drums 2030 are
subject to scanning. Note that the photoreceptor drums 2030 are
configured to rotate by a not-illustrated rotational mechanism in
directions indicated by arrows in FIG. 1.

[0068] The optical scanner device 2010 is configured to scan the charged
surfaces of the photoreceptor drums 2030 by luminous flux modulated for
corresponding colors based on the multicolored image information acquired
from the printer control device 2090. Hence, electric charges dissipate
only from light exposed parts of the surfaces of the photoreceptor drums
2030 such that latent images corresponding to the image information are
formed on the respective surfaces of the photoreceptor drums 2030. The
latent images formed on the surfaces of the photoreceptor drums 2030
travel along with the rotation of the photoreceptor drums 2030 in
directions toward the corresponding developing rollers 2032. Note that a
configuration of the optical scanner device 2010 will be described later.

[0069] Toner from the corresponding toner cartridges is uniformly applied
to the surfaces of the developing rollers 2033 while rotating such that
thin toner layer are uniformly formed on the surfaces of the developing
rollers 2033. The toner applied to the surfaces of the developing rollers
2033 are then transferred to the light exposed parts of the surfaces of
the photoreceptor drums 2030 and the transferred toner is then attached
to the light exposed parts of the surfaces of the photoreceptor drums
2030 while the toner is brought into contact with the surfaces of the
photoreceptor drums 2030. That is, the developing rollers 2033 apply
toner to the latent images formed on the surfaces of the corresponding
photoreceptor drums 2030 to make the latent images visible on the
surfaces of the photoreceptor drums 2030. Note that the toner applied
latent images (hereinafter also called "toner images" for convenience)
travel along with the rotation of the photoreceptor drums 2030 in a
direction toward the transfer belt 2040.

[0070] The toner images of respective colors of yellow, magenta, cyan and
black are sequentially transferred to the transfer belt 2040 at
predetermined timing so as to superimpose the respective toner images. As
a result, a color image is formed on the transfer belt 2040.

[0071] The paper feeding tray 2060 stores sheets of recording paper. The
paper feeding roll 2054 is arranged near the paper feeding tray 2060 so
as to pick one sheet of the recording paper (hereinafter simply called a
"recording sheet") from the paper feeding tray 2060 and transfer the
picked recording sheet to the resist roller pair 2056. The resist roller
pair 2056 transfers the recording sheet to an interval between the
transfer belt 2040 and the transfer roller 2042 at predetermined timing.
As a result, the color image on the transfer belt 2040 is transferred
onto the recording sheet. The recording sheet onto which the color image
is transferred is conveyed to the fixing device 2050.

[0072] The fixing device 2050 applies heat and pressure to the recording
sheet so as to fix the toner to the recording sheet. The recording sheet
to which the toner is fixed is conveyed to the paper output tray 2070 via
the discharge roller 2058 and sequentially stacked on the paper output
tray 2070.

[0073] Each of the cleaning units 2031 is configured to remove remaining
toner (residual toner) from the surface of the corresponding one of the
photoreceptor drums 2030. The surface of the corresponding photoreceptor
drum 1030 from which the residual toner is removed returns to a position
that faces the corresponding charging device 2032.

[0074] Next, the configuration of the optical scanner device 2010 is
described.

[0076] Note that a direction corresponding to a main-scanning direction is
hereinafter called a "main-scanning equivalent direction", and a
direction corresponding to a sub-scanning direction is called a
"sub-scanning equivalent direction" for convenience.

[0077] The light source 2200a, the coupling lens 2201a, the apertured
plate 2202a, the cylindrical lens 2204a, the scanning lens 2105a and the
turning mirror 2106a serve as an optical member for forming a latent
image on the surface of the photoreceptor drum 2030a.

[0078] The light source 2200b, the coupling lens 2201b, the apertured
plate 2202b, the cylindrical lens 2204b, the scanning lens 2105b, the
turning mirror 2106b and the turning mirror 2108b serve as an optical
member for forming a latent image on the surface of the photoreceptor
drum 2030b.

[0079] The light source 2200c, the coupling lens 2201c, the apertured
plate 2202c, the cylindrical lens 2204c, the scanning lens 2105c, the
turning mirror 2106c and the turning mirror 2108c serve as an optical
member for forming a latent image on the surface of the photoreceptor
drum 2030c.

[0080] The light source 2200d, the coupling lens 2201d, the apertured
plate 2202d, the cylindrical lens 2204d, the scanning lens 2105d and the
turning mirror 2106d serve as an optical member for forming a latent
image on the surface of the photoreceptor drum 2030d.

[0081] Each of the coupling lenses 2201 is arranged in an optical path of
the luminous flux emitted from the corresponding light source 2200 to
make the luminous flux an approximately parallel luminous flux.

[0082] Each of the apertured plates 2202 has an aperture so that the
apertured plate 2202 adjusts the luminous flux via the corresponding
coupling lens 2201.

[0083] Each of the cylindrical lenses 2204 converges the luminous flux
having passed through the corresponding apertured plate 2202 to form an
image relative to the y-axis direction near deflection reflecting
surfaces of the optical deflector 2104.

[0084] The optical deflector 2104 includes two-staged polygon mirrors.
Each of the two-staged polygon mirrors includes four deflection
reflecting surfaces. The first stage (lower stage) of the polygon mirror
deflects the luminous flux from the cylindrical lens 2204a and the
luminous flux from the cylindrical lens 2204b. The second stage (upper
stage) of the polygon mirror deflects the luminous flux from the
cylindrical lens 2204b and the luminous flux from the cylindrical lens
2204c. Note that the first stage and the second stage of the polygon
mirrors rotate with a phase of the first stage being shifted from a phase
of the second stage by approximately 45 degrees.

[0085] The luminous flux from the cylindrical lens 2204a deflected by the
optical deflector 2104 is applied to the photoreceptor drum 2030a via the
scanning lens 2105a and the turning mirror 2106a so as to form an optical
spot. The optical spot travels with the rotation of the optical deflector
2104 in a longitudinal direction of the photoreceptor drum 2030a.

[0086] Likewise, the luminous flux from the cylindrical lens 2204b
deflected by the optical deflector 2104 is applied to the photoreceptor
drum 2030b via the scanning lens 2105b and the two turning mirrors 2106b
and 2108b so as to form an optical spot. The optical spot travels with
the rotation of the optical deflector 2104 in a longitudinal direction of
the photoreceptor drum 2030b.

[0087] Similarly, the luminous flux from the cylindrical lens 2204c
deflected by the optical deflector 2104 is applied to the photoreceptor
drum 2030c via the scanning lens 2105c and the two turning mirrors 2106c
and 2108c so as to form an optical spot. The optical spot travels with
the rotation of the optical deflector 2104 in a longitudinal direction of
the photoreceptor drum 2030c.

[0088] Likewise, the luminous flux from the cylindrical lens 2204d
deflected by the optical deflector 2104 is applied to the photoreceptor
drum 2030d via the scanning lens 2105d and the turning mirror 2106d so as
to form an optical spot. The optical spot travels with the rotation of
the optical deflector 2104 in a longitudinal direction of the
photoreceptor drum 2030d.

[0089] Note that a traveling direction of the optical spot on each of the
photoreceptor drums 2030 corresponds to a "main-scanning direction"
whereas a rotational direction of each of the photoreceptor drums 2030
corresponds to a "sub-scanning direction".

[0090] An optical system arranged in an optical path between the optical
deflector 2104 and each of the photoreceptor drum 2030 may also be called
a "scanning optical system".

[0091] Each of the light sources includes a surface-emitting laser array
100 composed of 32 luminescent parts that are arranged two-dimensionally
(See FIG. 6). In this configuration, a z-axis direction is defined as a
laser oscillation direction, and the x-axis and y-axis directions are
defined as two directions mutually orthogonal to the z-axis direction
within a surface of the surface-emitting laser array.

[0092] As illustrated in FIG. 7, 32 luminescent parts are arranged at
equal intervals (i.e., indicated by "d1" in FIG. 7) in a condition where
all the luminescent parts are orthogonally projected in a virtual line
extending in the x-axis direction. Note that in this specification, a
"luminescent part interval" is defined as a center-to-center distance
between the two luminescent parts.

[0093] Note that FIG. 8A is a cross sectional diagram illustrating one
luminescent part sectioned in parallel with an xz plane, and FIG. 8B is a
cross sectional diagram illustrating the luminescent part sectioned in
parallel with a yz plane.

[0094] Each of the luminescent parts is a surface-emitting layer that has
an oscillation wavelength of 780 nm band, and is configured to include a
substrate 101, a buffer layer 102, a lower semiconductor DBR 103, a lower
spacer layer 104, an active layer 105, an upper spacer layer 106, an
upper semiconductor DBR 107, an upper electrode 113, a lower electrode
114, a wiring member 115, and a dielectric film 116.

[0095] As illustrated in FIG. 9A, the substrate 101 has a mirror polishing
surface (a main surface). The substrate 101 is an n-GaAs mono-crystal
substrate, a normal line direction of which is inclined at 15 degrees
(8=15) toward a crystal orientation [1 1 1] A direction relative to a
crystal orientation [1 0 0] direction. That is, the substrate 101 is a
so-called "inclined substrate". Note that as illustrated in FIG. 9B, the
substrate 101 is arranged such that the crystal orientation [0 -1 1]
direction of the substrate 101 is a +x direction and the crystal
orientation [0 1 -1] direction of the substrate 101 is a -x direction.
Hence, an inclined axis of the inclined substrate is parallel to the
x-axis direction. Note that -y direction may also be called an "inclined
direction".

[0096] Further, in this configuration, the use of the inclined substrate
as the substrate 101 may provide a polarization adjusting function to
stabilize the polarization direction in the x-axis direction.

[0097] Referring back to FIGS. 8A and 8B, the buffer layer 102 is formed
of an n-GaAs layer and layered on the surface of the substrate 101 in a
+z direction.

[0098] The lower semiconductor DBR 103 is layered on a surface of the
buffer layer 102 in the +z direction. The lower semiconductor DBR 103 has
42.5 pairs of refractive index layers each having a low refractive index
layer made of an n-Al0.93Ga0.07As and a high refractive index
layer made of an n-Al03Ga0.7As. A composition gradient layer
having a thickness of 20 nm is provided between the low refractive index
layer and the high refractive index layer for reducing electric
resistance. Note that a ratio of one composition to the other in the
composition gradient layer gradually changes. Each of the low refractive
index layer and the high refractive index layer is arranged such that the
corresponding refractive index layer includes a half of the adjacent
composition gradient layer, and an optical thickness of the corresponding
refractive index layer is set as λ/4 provided that the oscillation
wavelength is determined as λ. Note that if the optical thickness
is determined as λ/4, an actual thickness D of the corresponding
layer is D=λ/4n. Note that n represents a refractive index of a
medium of that layer.

[0099] The lower spacer layer 104 is layered on a surface of the lower
semiconductor DBR 103 in the +z direction. The lower spacer layer 104 is
formed of an undoped layer made of Al0.33Ga0.67As.

[0100] The active layer 105 is layered on a surface of the lower spacer
layer 104 in the +z direction. The active layer 105 is formed of
GaInAsP/Al0.33Ga0.67As having a triple quantum well structure.

[0101] The upper spacer layer 106 is layered on a surface of the active
layer 105 in the +z direction. The upper spacer layer 106 is formed of an
undoped layer made of Al0.33Ga0.67As.

[0102] A part composed of the lower spacer layer 104, the active layer 105
and the upper spacer layer 106 may also be called a "resonator
structure". The resonator structure is configured to include a half of
the adjacent composition gradient layer such that an optical thickness of
the resonator structure is formed as 1 wavelength. The active layer 105
is provided at a center of the resonator structure located corresponding
to a position of a loop of a standing wave distribution of the electric
field so as to obtain a highly induced stimulated emission probability.

[0103] The upper semiconductor DBR 107 is layered on a surface of the
upper spacer layer 106 in the +z direction. The upper semiconductor DBR
107 has 32 pairs of a low refractive index layer made of
p-Al0.93Ga0.07As and a high refractive index layer made of
p-Al0.33Ga0.67As. A composition gradient layer is provided
between the low refractive index layer and the high refractive index
layer. Each of the low refractive index layer and the high refractive
index layer is arranged such that the corresponding refractive index
layer includes a half of the adjacent composition gradient layer, and an
optical thickness of the corresponding refractive index layer is set as
λ/4.

[0104] A selective oxidation layer made of p-Al0.99Ga0.01As and
having a thickness of 30 nm is inserted into one of the low refractive
index layers of the upper semiconductor DBR 107. More specifically, the
selective oxidation layer is inserted into the refractive index layer of
the second pair from the upper spacer layer 106.

[0105] The contact layer 109 is made of p-GaAs. The contact layer 109 is
layered on a surface of the upper semiconductor DBR 107 in the +z
direction.

[0106] Note that a product obtained by layering two or more semiconductor
layers on the substrate 101 is simply called a "layered product".

[0107] Next, a method for fabricating the surface-emitting laser array 100
is described.

[0109] In this process, trimethylaluminum, trimethylgallium (TMG), and
trimethylindium (TMI) are used as raw materials for III-Group, and
phosphine (PH3) and arsine (AsH3) are used as raw materials for
V-Group. In addition, carbon tetrabromide (CBr4) and dimethylzinc
(DMZn) are used as p-type dopant materials, and hydrogen selenide
(H2Se) is used as an n-type dopant material.

[0110] Process 2: A square resist pattern having 25 μm on a side
corresponding to a desired mesa shape is formed on the surface of the
layered product.

[0111] Process 3: a square pillar-shaped mesa is formed by
inductively-coupled plasma (ICP) dry etching utilizing the aforementioned
square resist pattern as a photomask. In this process, a bottom surface
for etching is located in the lower spacer layer 104.

[0112] Process 4: The photomask is removed as illustrated in FIG. 11.

[0113] Process 5: The resulting layered product is heat-treated with water
vapor. In this process, aluminum (Al) of the selective oxidation layer
108 is selectively oxidized from an outer periphery of the mesa. Then, an
unoxidized region 108b enclosed by an Al oxide layer 108a remains at a
central part of the mesa as illustrated in FIG. 12. As a result, an oxide
confinement structure configured to restrict a path for the drive current
of a luminescent part only to a path formed in the central part of the
mesa. Note that the aforementioned unoxidized region 108b corresponds to
the current passing region (also referred to as a "current injection
region"). The current passing region (current injection region) 108b has
an approximately square shape having a length of approximately 5.4 μm
on a side.

[0114] Process 6: A resist mask for forming a separation groove (along
which the chip is cut) is formed on the surface of the layered product.

[0115] Process 7: The separation groove (along which the chip is cut) is
formed on the surface of the layered product by dry etching utilizing the
aforementioned resist mask as an etching mask.

[0116] Process 8: A protective layer 111 made of SiN is formed by chemical
vapor deposition (CVD) as illustrated in FIG. 13. In this process, an
optical thickness of the protection layer 111 is set as λ/4.
Specifically, since a refractive index n of SiN is 1.86 and an
oscillation wavelength λ is 780 nm, the actual film thickness
(=λ/4 n) of the protection layer 111 is set as approximately 105
nm.

[0117] Process 9: An etching mask for forming an opening (hereinafter also
called a "mask M") is formed on an upper side of the mesa serving as a
laser emitting surface. In this process, the mask M is formed so as to
not to etch the periphery of the upper surface of the mesa and a ring
region of the upper surface of the mesa. As an example, an inner diameter
and an outer diameter of the ring region are determined as 4 μm and 8
μm, respectively. Further, a center of the inner diameter of the ring
region in this example is shifted by Δy (i.e., Δy=0.2 μm
in this example) from a center of the current passing region 108b toward
+y direction as illustrated in FIG. 14. Note that the center of the
current passing region 108b indicates an intersection of two diagonal
lines in the current passing region 108b. Note that in the related art
surface-emitting laser array, Δy is set as Δy=0, as
illustrated in FIG. 15.

[0119] Process 11: The masks M are then removed as illustrated in FIGS.
16A and 16B. Note that the protective layer 111 remaining in a region
corresponding to an opening of the upper electrode 113 serves as the
dielectric film 116. The dielectric film 116 serves as a function to
decrease the reflectivity of the peripheral part of the upper surface of
the mesa compared to the central part of the upper surface of the mesa.
That is, the dielectric film 116 serves as a function to decrease the
reflectivity of the peripheral part of the upper surface of the mesa such
that reflectivity of the peripheral part within a laser emitting region
of the upper surface of the mesa is lower than reflectivity of the
central part of the upper surface of the mesa.

[0120] Process 12: A square resist pattern having 10 μm on a side is
formed such that a center of the square resist pattern approximately
matches the center of the upper surface of the mesa to thereby deposit a
p-side electrode material. As an electrode material, a multilayer film of
Cr/AuZn/Au or a multilayer film of Ti/Pt/Au may be used.

[0121] Process 13: The electrode material deposited on the square resist
pattern is lifted off so as to form the upper electrode 113 as
illustrated in FIGS. 17 and 18. The region enclosed by the upper
electrode 113 corresponds to the emission region. A center of the
emission region matches the center of the upper surface of the mesa. Note
that a center of an inner diameter of the dielectric film 116 in this
example is shifted by Δy (i.e., Δy=-0.2 μm in this
example) from a center of the emission region toward -y direction.

[0122] Process 14: The backside of the substrate 101 is polished in a
predetermined thickness (e.g., 100 μm), and the lower electrode 114 is
then formed on the polished backside surface of the substrate 101 as
illustrated in FIG. 14. In this example, the lower electrode 114 is made
of a multilayer film of AuGe/Ni/Au.

[0123] Process 15: The ohmic conductivity of the upper electrode 113 and
the lower electrode 114 is obtained by annealing. As a result, the mesa
is formed as the luminescent part.

[0124] Process 16: The luminescent parts are then cut per chip, and then
implemented in a ceramic package.

[0125] A laser emitting direction is measured for each of the luminescent
parts in the thus formed surface-emitting laser array 100 when output
power is 0.3 mW. The results of the measurements indicate that each of
the luminescent parts emits laser light approximately orthogonal to a
reference plane of the package.

[0126] FIG. 20 illustrates a comparative example having a layer structure
similar to that of the surface-emitting laser array 100. As illustrated
in FIG. 20, in the comparative example of the surface-emitting laser
array (hereinafter referred to as a "surface-emitting laser array A"), a
center of an inner diameter of the dielectric film 116 is shifted by
Δy (i.e., Δy=-0.2 μm) from a center of the emission region
toward -y direction. A laser emitting direction is measured for each of
the luminescent parts in the comparative example of the surface-emitting
laser array A when output power is 0.3 mW. The results of the
measurements indicate that each of the luminescent parts emitting laser
light within a plane orthogonal to the inclined axis of the substrate
exhibits inclination in a direction opposite to an inclined direction of
the substrate 101 relative to a direction orthogonal to a reference plane
of the package. Note that in the surface-emitting laser array A in which
a center of an inner diameter of the dielectric film 116 is shifted
Δy=0 μm from a center of the emission region, each of the
luminescent parts also exhibits laser emitting inclination in a direction
opposite to an inclined direction of the substrate 101 relative to a
direction orthogonal to a reference plane of the package within a plane
orthogonal to the inclined axis of the substrate.

[0127] As described above, the surface-emitting laser array 100 according
to the embodiment includes the substrate 101, the buffer layer 102, the
lower semiconductor DBR 103, the resonator structure, the upper
semiconductor DBR 107, the upper electrode 113, the lower electrode 114,
the wiring member 115 and the dielectric film 116.

[0128] The substrate 101 is the inclined substrate having an x-axis
direction as the inclined axis direction. Further, the dimension in the
y-axis direction of the current passing region 108b is approximately 5.4
μm. The center of the inner diameter of the dielectric film 116 in
viewing from the z-axis direction is shifted by 0.2 μm from the center
of the emission region toward +y direction.

[0129] In this case, the surface-emitting laser array 100 may be capable
of suppressing oscillation of a high-order transverse mode and capable of
emitting laser light approximately orthogonal to the reference plane.

[0130] Further, in the optical scanner device 2010 according to the
embodiment, each of the light sources has the above surface-emitting
laser array 100. Accordingly, optical scanning of each of the
photoreceptor drums may be carried out with high accuracy.

[0131] Further, the color printer 2000 according to the embodiment
includes the above optical scanner device 2010. As a result, a high
quality image may be formed.

[0132] In the surface-emitting laser array 100, the luminescent parts are
arranged at equal intervals d2 in a condition where all the luminescent
parts are orthogonally projected in a virtual line extended in the
sub-scanning direction. Hence, the surface-emitting laser array 100 may
have a configuration similar to a case where the luminescent parts are
arranged at equal intervals on the photoreceptor drum in the sub-scanning
direction by adjusting illuminating timing.

[0133] If, for example, the aforementioned intervals d2 is 2.65 μm and
magnification of the optical system in the optical scanner device 2010 is
two-fold power (2×), the optical scanner device 2010 may be capable
of writing an image with high-density resolution of 4800 dpi (dot/inch).
Further, if the number of the luminescent parts is increased, if the
luminescent parts are arranged in an array configuration where the
interval d2 is reduced by narrowing a pitch d1 (see FIG. 7) in the
sub-scanning direction, or if the magnification of the optical system is
reduced, the optical scanner device 2010 may be capable of writing an
image with even higher density resolution, thereby printing the image
with high quality. Note that the writing (scanning) intervals in the
main-scanning direction may be easily controlled by adjusting
illuminating timing of the luminescent parts.

[0134] In this case, the color printer 2000 may print the image without
lowering printing speeds despite the fact that the writing dot density is
increased. Further, the color printer 2000 may print the image with
higher printing speeds when the writing dot density is constant.

[0135] Moreover, the life-span of the color printer 2000 is increased by
efficient use of the surface-emitting laser array 100, which may enable
the writing unit or the light source unit to be recycled.

[0136] Note that in the above embodiment, as illustrated as an example in
FIG. 21, the dielectric film 116 may have a ring shape from which two
opposing ends in the y-axis direction are removed. In this case, a laser
emitting direction is measured for each of the luminescent parts in the
thus formed surface-emitting laser array 100 formed in a condition where
Δy=0.2 μm when output power is 0.3 mW. The results of the
measurements indicate that each of the luminescent parts emits laser
light approximately orthogonal to a reference plane of the package.

[0137]FIG. 22 illustrates a relationship (measured results) between a
value of λy and a laser emitting direction at output power of 0.3
mW in the approximately square surface-emitting laser array that includes
the current passing region 108b having a length of approximately 5.4
μm on a side.

[0138] As illustrated in FIG. 22, when the value of λy is in a range
of 0.2 to 0.4 μm, laser light is emitted in a direction closer to a
direction orthogonal to the reference plane compared to a case where the
value being Δy=0 in the related art.

[0139] In viewing from the direction orthogonal to the emission region, as
illustrated as an example in FIG. 18, an overlapped part of the
dielectric film 116 and the current passing region 108b is present on a
first side (i.e., -y side) and a second side (i.e., +y side) of an axis
direction (i.e., y-axis direction in this example) orthogonal to the
inclined axis of the inclined substrate with respect to a center of the
current passing region 108b, and an area of the overlapped part on one
side differs from an area of the overlapped part on the other side. Note
that in the related art example, an area of the overlapped part of the
dielectric film and the current passing region on one side is equal to an
area of the overlapped part on the other side in the axis direction
orthogonal to the inclined axis of the substrate.

[0140] Specifically, a direction from the center of the current passing
region toward the aforementioned axis direction matches the inclined
direction (see FIG. 9A, -y direction in this case). The area of the
overlapped part on one side is greater than in the area of the overlapped
part on the other side. The radiant intensity distribution is widened in
the overlapped part of the dielectric film and the current passing
region. Hence, strength of the entire radiant distribution is attracted
in the inclined direction so as to change the entire radiant
distribution. As a result, even if the inclined substrate is used, the
emitting direction may be directed at a direction orthogonal to the
reference plane.

[0141] In a case where the overlapped part of the dielectric film and the
current passing region is increased on the inclined direction side,
luminous efficiency of the laser light is not lowered as expected and is
the same as that obtained in the surface-emitting laser array formed in a
condition where Δy=0 μm.

[0142]FIG. 23 is a diagram illustrating a relationship between a
dimension in the y-axis direction of the current passing region and an
emitting direction within the yz plane when a center of an inner diameter
of the dielectric film matches a center of the emission region in view of
the z-axis direction. As illustrated in FIG. 23, there is a correlation
between the dimension in the y-axis direction of the current passing
region and the emitting direction. The emitting direction is increased as
the dimension in the y-axis direction of the current passing direction
increases.

[0143] Hence, in viewing from a direction orthogonal to the emission
region, a center of a region enclosed by the dielectric film is shifted
from the center of the emission region in a direction orthogonal to the
inclined axis of the inclined substrate based on a size of the current
passing region, which may suppress the oscillation of the high-order
transverse mode and may cause the surface-emitting laser array to emit
laser light in a direction approximately orthogonal to the reference
plane.

[0144] Further, in the above embodiment, an outer shape of the cross
sectional surface of the mesa is approximately square; however, the outer
shape of the cross sectional surface of the mesa may not be limited to
the square shape. For example, the outer shape of the cross sectional
surface of the mesa may be any of circular, elliptical, and rectangular
shapes.

[0145] In the above embodiment, the normal line direction of the main
surface of the substrate 101 is inclined toward the crystal orientation
[1 1 1] A direction relative to the crystal orientation [1 0 0]
direction; however, the inclination of the normal line direction of the
main surface of the substrate 101 may not be limited to the above
described inclination. That is, the substrate 101 may be inclined such
that the normal direction of the main surface of the substrate 101 is
inclined toward one direction of the crystal orientation [1 1 1]A
relative to one direction of the crystal orientation [1 0 0].

[0146] Further, in the above embodiment, each of the light sources
includes the surface-emitting laser array 100. However, the light source
configuration may not be limited to the above-described configuration.
For example, each of the light sources may be fabricated in a manner
similar to the fabrication of the surface-emitting laser array 100 and
the luminescent part may include one surface-emitting laser device.

[0147] In the above embodiment, the oscillation wavelength of each of the
luminescent parts is 780 nm band; however, the oscillation wavelength of
the luminescent part may not be limited to 780 nm band. The oscillation
wavelength of the luminescent part may be changed based on
characteristics of the photoreceptor drums.

[0148] Further, the surface-emitting laser array 100 may be used for
apparatuses or devices other than the image forming apparatus in the
above embodiment. In such cases, the oscillation wavelength may be 650 nm
band, 850 nm band, 980 nm band, 1.3 μm band, or 1.5 μm band based
on application purposes.

[0149] Further, in the above embodiment, the color printer is used as an
example of the image forming apparatus; however, the image forming
apparatus may not be limited to the color printer.

[0150] In addition, the aforementioned image forming apparatus is
configured to transfer a toner image to a recording sheet. However, the
aforementioned image forming apparatus may not be limited to such an
image forming apparatus. For example, the image forming apparatus may be
configured to directly emit laser light toward a color-developing medium
(e.g., paper).

[0151] Further, the aforementioned image forming apparatus may be
configured to utilize a silver-salt film as an image carrying member. In
this case, a latent image is formed on the silver-salt film by an optical
scanning, and the latent image is visualized by a process similar to a
developing process of an ordinary silver halide photography process.
Subsequently, the visualized image is transferred onto photographic
printing paper by a printing process similar to that carried out in the
ordinary silver halide photography process. Such an image forming
apparatus may be implemented as an optical plate-making apparatus or an
optical plotting apparatus that plots CT scanned images.

[0152] The surface-emitting laser device according to the aforementioned
embodiment may be capable of suppressing oscillation of the high-order
transverse mode and capable of emitting laser light approximately
orthogonal to the reference plane.

[0153] Further, the optical scanning device according to the
aforementioned embodiment may be capable of carrying out optical scanning
of a surface subject to scanning with high accuracy.

[0154] Moreover, the image forming apparatus according to the
aforementioned embodiment may be capable of forming high quality images.

[0155] All examples and relationshipal language recited herein are
intended for pedagogical purposes to aid the reader in understanding the
principles of the invention and the concepts contributed by the inventor
to furthering the art, and are to be construed as being without
limitation to such specifically recited examples and relationships, nor
does the organization of such examples in the specification relate to a
showing of the superiority or inferiority of the invention. Although the
embodiment of the present invention has been described in detail, it
should be understood that various changes, substitutions, and alterations
could be made hereto without departing from the spirit and scope of the
invention.

[0156] This patent application is based on Japanese Priority Patent
Application No. 2011-167955 filed on Aug. 1, 2011, and Japanese Priority
Patent Application No. 2012-130844 filed on Jun. 8, 2012, the entire
contents of which are hereby incorporated herein by reference.