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TOKYO, Japan — October 22, 2015 — Leading semiconductor test equipment supplier Advantest Corporation (TSE: 6857, NYSE: ATE) announced today that it has initiated sales of its new TDR Option for the company's TS9000 series of terahertz analysis systems. The new option enables analysis of circuit quality in semiconductors, printed substrates, electronic components, and other applications, utilizing short-pulse terahertz waves.

Advantest will demonstrate its new TS9000 terahertz analysis systems for the semiconductor industry in booth 619, at the International Microelectronics Assembly and Packaging Society conference in Orlando, FL, October 27-29, 2015 at the Rosen Center Hotel. IMAPS is the largest society dedicated to the advancement and growth of microelectronics and electronics packaging technologies. More information on IMAPS can be found at: http://www.imaps.org/imaps2015/.

TS9000 TDR Option probe station

Background

Electronic device circuit quality analysis is commonly performed using oscilloscope TDR (time domain reflectometry). However, as devices grow smaller and more highly integrated, the ability to locate failures with extreme spatial precision has become increasingly more important., Existing measurement instruments have limited resolution, as the rise time of the short pulse cannot be compressed much further, creating the risk that existing analysis technologies will be inadequate to handle the requirements of the highly integrated devices on the horizon. Advantest's terahertz analysis technology addresses these concerns and meets the need for ultra-high-resolution measurement by utilizing short-pulse terahertz waves for analysis of complex electrical circuits.

Key Features

The TS9000 TDR Option relies on Advantest's market-proven TDR/TDT(*) measurement technology to pinpoint and map circuit defects utilizing short-pulse signal processing. The solution delivers circuit analysis with an extremely high spatial precision of less than 5µm, and a maximum measurement range of 300 mm, including for internal circuitry used in through-silicon vias (TSVs) and interposers. Moreover, with the optional TDR/TDT CAD Data Link, errors located can be mapped and displayed on the CAD data of the target device, making it much easier for users to identify the causes of errors. Three types of TDR/TDT probes, each with a different resolution and measurement distance setting, are available for the TS9000 TDR Option, as are customizations for unique contact requirements.

Advantest announced the TS9000 MTA Option, a terahertz analysis system for measuring semiconductor mold thickness, in September 2014. With the launch of the TDR Option, the TS9000 Series continues to define the company's new approach to measurement utilizing terahertz technology, adding critical support for advanced electronic device measurement and product quality management.

(*) TDR (time domain reflectometry)/TDT (time domain transmissometry) is widely used to locate circuit failures. Signals are output and the times taken for them to be reflected / transmitted through the target device, as well as their waveforms, form the basis of measurement calculations, allowing users to determine the transmissivity and other qualities of the device.

Pass

Fail

3D semiconductor wiring failures and TDR measurement examples

Key Specifications

Maximum DUT size

150mm × 150mm

Fault position locating resolution

< 5µm

Available measurement length

> 300mm (In TDR configuration)
> 600mm (In TDT configuration)

Measurement time

< 5min/point @ TDR 300 mm

Size / Weight

Probe Station:

1230mm (W) ×

830mm (D) ×

700 (H) mm /

140kg or less

Analysis Unit:

430mm (W) ×

540mm (D) ×

230 (H) mm /

30kg or less

Optical Unit:

430mm (W) ×

240mm (D) ×

220 (H) mm /

14kg or less

Note: All information supplied in this release is correct at the time of publication, but may be subject to change without warning.