Abstract

Formation of ultrathin amorphized Si layer by femtosecond laserirradiation is reported in this letter. Below the fluence of ablation threshold, femtosecond laserirradiation induced an amorphization of crystalline Si. The authors confirmed the thickness of amorphous Si layer by transmission electron microscope. The thickness of the amorphized layer was found to be quite uniform and did not depend on the number of irradiated laser pulses and fluence, which was related to the effective light penetration depth.