Using the Hall method, regularities of Te doping of GaSb grown by the Czochralski method and by liquid-phase epitaxy (LPE) are studied. Optimum epitaxial conditions that enable the growth of Te-doped GaSb layers with higher carrier mobilities than the bulk Czochralski-grown GaSb are determined. Possibilities of improvement of output parameters of photoconverters obtained by diffusion of Zn into n-GaSb from the gas phase and by LPE are discussed.

Comparison of GaSb TPV cells fabricated on the wafers obtained from different manufacturers is carried out. TPV arrays with three and four 1x1 cm2 cells connected in series and parallel were fabricated and investigated at both pulsed illumination and at radiation of emitter heated by gas. Arrays from four 8x9 mm2GaSb cells connected in series-parallel using the shingled assembling process have been manufactured. TPV arrays from four GaSb cells 1x1 cm2 in size connected in both series and parallel have alike electrical power of 5 W at the photocurrent density of 5 A/cm2.

A hybrid solar and fuel thermophotovoltaic system development is reported. Module design with performance analysis of its parts is presented. The solar part of the module consists of a Fresnel lens ensuring 3200x concentration. The fuel-fired part is a propane burner ensuring an effective no-flame regime of the burning process. The developed system is tested in three regimes: solar only with the tungsten- emitter coated with a HfO2 layer for better spectral matching, gas-powered and hybrid. The advanced module with improved cell cooling for better performance in the gas-fired regime is developed and tested.