PRODUCTSDDR3 SDRAM

H5TQ4G43BFR

The H5TQ4G43BFR-xxC and H5TQ4G83BFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

Features

VDD=VDDQ=1.5V +/- 0.075V

Fully differential clock inputs (CK, CK) operation

Differential Data Strobe (DQS, DQS)

On chip DLL align DQ, DQS and DQS transition with CK transition

DM masks write data-in at the both rising and falling edges of the data strobe

All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock