Abstract

A triple-push oscillator has been implemented using MMIC approach. This 24.6-GHz MMIC HBT triple-push oscillator was fabricated using InGaP/GaAs HBT MMIC technology. The principle of a trip e-push oscillator is that three identical fundamental oscillators are combined via microstrip-lines and operated in odd-mode oscillation to provide 120 o phase difference among three fundamental oscillators. As a consequence, the third harmonic signals of this MMIC triple-push oscillator chip were in-phase added to provide an output signal of –14.8 dBm at 24.6 GHz with more than 20-dB fundamental and the second harmonic rejection.

Abstract

A triple-push oscillator has been implemented using MMIC approach. This 24.6-GHz MMIC HBT triple-push oscillator was fabricated using InGaP/GaAs HBT MMIC technology. The principle of a trip e-push oscillator is that three identical fundamental oscillators are combined via microstrip-lines and operated in odd-mode oscillation to provide 120 o phase difference among three fundamental oscillators. As a consequence, the third harmonic signals of this MMIC triple-push oscillator chip were in-phase added to provide an output signal of –14.8 dBm at 24.6 GHz with more than 20-dB fundamental and the second harmonic rejection.