Silicon Carbide (SiC) has been demonstrated as the most promising material for High Power applications due to its wide bandgap, high thermal conductivity, good carrier transport, and native substrates. Serious effort began in year 2001 to drive down the device killer material defects such as basal plane dislocations (BPDs) and other extended defects. At the start of the program, BPD densities in SiC epilayers were >105 cm-2, and currently typical densities are less than 1 cm-2. In this talk, this journey of BPD reduction and elimination in SiC substrates and epilayers, which resulted in commercial devices, will be presented. Additionally, new material challenges to obtain ultra-high voltage devices will be discussed.