This chapter discusses the fabrication and performance of QD vertical-cavity surface-emitting lasers (VCSELs) as well as their possible applications. The physical fundamentals of optical ...
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This chapter discusses the fabrication and performance of QD vertical-cavity surface-emitting lasers (VCSELs) as well as their possible applications. The physical fundamentals of optical microcavities and VCSELs are briefly reviewed. Some fundamental issues and specific features of QD VCSEL design and fabrication are considered. Specifically, scalability properties of QD VCSELs in comparison with quantum well structures are discussed. The effects of realistic (existing) QD active media on VCSEL design are examined. A technique of selective wet oxidation of AlGaAs alloys is described, and its use in QD VCSEL technology is justified. The current status of QD VCSELs is presented, and their possible device applications are also discussed. Advantages of InGaAs quantum dots for GaAs-based long-wavelength VCSELs are considered.Less

Quantum dot vertical-cavity surface-emitting lasers

Victor M. UstinovAlexey E. ZhukovAnton Yu. EgorovNikolai A. Maleev

Published in print: 2003-08-21

This chapter discusses the fabrication and performance of QD vertical-cavity surface-emitting lasers (VCSELs) as well as their possible applications. The physical fundamentals of optical microcavities and VCSELs are briefly reviewed. Some fundamental issues and specific features of QD VCSEL design and fabrication are considered. Specifically, scalability properties of QD VCSELs in comparison with quantum well structures are discussed. The effects of realistic (existing) QD active media on VCSEL design are examined. A technique of selective wet oxidation of AlGaAs alloys is described, and its use in QD VCSEL technology is justified. The current status of QD VCSELs is presented, and their possible device applications are also discussed. Advantages of InGaAs quantum dots for GaAs-based long-wavelength VCSELs are considered.

In this chapter we address the optical properties of microcavities in the weak-coupling regime and review the emission of light from microcavities in the linear regime. We present a derivation of the ...
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In this chapter we address the optical properties of microcavities in the weak-coupling regime and review the emission of light from microcavities in the linear regime. We present a derivation of the Purcell effect and stimulated emission of radiation by microcavities, and consider how this develops towards lasing. Finally, we briefly consider nonlinear properties of weakly coupled semiconductor microcavities. The functionality of vertical-cavity surface-emitting lasers (VCSELs) is also described.Less

Weak-coupling microcavities

Published in print: 2017-05-11

In this chapter we address the optical properties of microcavities in the weak-coupling regime and review the emission of light from microcavities in the linear regime. We present a derivation of the Purcell effect and stimulated emission of radiation by microcavities, and consider how this develops towards lasing. Finally, we briefly consider nonlinear properties of weakly coupled semiconductor microcavities. The functionality of vertical-cavity surface-emitting lasers (VCSELs) is also described.

The variation of the threshold current density with temperature is an important characteristic of a diode laser and considerable effort is devoted to designing devices that have a ...
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The variation of the threshold current density with temperature is an important characteristic of a diode laser and considerable effort is devoted to designing devices that have a temperature-insensitive threshold current to avoid the expense, and power consumption, of device cooling. This chapter sets out the physics that determines this dependence, together with some illustrative examples. Relevant processes include Auger recombination and carrier leakage out of the confined region, as well as barrier recombination and current flow through the cladding layers by drift and diffusion. In quantum dot lasers the wetting layer has significant influence on the temperature dependence. In a VCSEL the temperature dependence of threshold is determined by the need to meet the threshold condition at the cavity resonance rather than the gain peak. The conditions surrounding the use of the characteristic temperature T0 as a measure of temperature sensitivity are described.Less

Temperature dependence of threshold current

Peter Blood

Published in print: 2015-10-01

The variation of the threshold current density with temperature is an important characteristic of a diode laser and considerable effort is devoted to designing devices that have a temperature-insensitive threshold current to avoid the expense, and power consumption, of device cooling. This chapter sets out the physics that determines this dependence, together with some illustrative examples. Relevant processes include Auger recombination and carrier leakage out of the confined region, as well as barrier recombination and current flow through the cladding layers by drift and diffusion. In quantum dot lasers the wetting layer has significant influence on the temperature dependence. In a VCSEL the temperature dependence of threshold is determined by the need to meet the threshold condition at the cavity resonance rather than the gain peak. The conditions surrounding the use of the characteristic temperature T0 as a measure of temperature sensitivity are described.