Abstract

Higher Ion/Ioff and a low off state leakage is desirable for a selector diode for memory applications. Punch through based triangular barrier bidirectional Si NIPIN selector possess high on-off current ratio (>1 × 104) with a low off state leakage current. An Ion/Ioff > 1 × 106 at 1 V with an Ioff of 76 nA at 0.5 V, for NIPIN, has been demonstrated here, by scaling the i-region length and delta-p doping by simulation results which are calibrated with experimental results.