Si nanocrystals (NCs) are often prepared by thermal annealing of multiple stacks of alternating sub-stoichiometric SiOx
and SiO2 nanolayers. It is frequently claimed that in these structures, the NC diameter can be predefined by the
thickness of the SiOx layer, while the NC concentration is independently controlled by the stoichiometry parameter
x. However, several detailed structural investigations report that the NC size confinement to within the thickness of the
SiOx layer is not strictly obeyed. In this study we address these contradicting findings: based on cross-correlation
between structural and optical characterization of NCs grown in a series of purposefully prepared samples of different stoichiometry
and layer thickness, we develop a comprehensive understanding of NC formation by Si precipitation in multinanolayer structures.
We argue that the narrow NC size distribution generally observed in these materials appears due to reduction of the Si diffusion
range, imposed by the SiO2 spacer layer. Therefore, both the SiOx layer thickness and composition as
well as the actual thickness of the SiO2 spacer play an essential role in the NC formation.

Disclaimer/Complaints regulations

If you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let
the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible
and/or remove it from the website. Please Ask the Library, or send a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands.
You will be contacted as soon as possible.