Dual 100V MOSFET has ESD protection for automotive headlights

Toshiba Electronics Europe has released a dual MOSFET with high levels of ESD protection intended for use in rugged automotive applications, including as a driver IC for headlight LEDs.

The SSM6N813R’s maximum drain-source voltage (VDSS) of 100V makes it suitable for headlight applications requiring multiple LEDs. Fabricated using the latest process, the SSM6N813R has a maximum power dissipation of 1.5W and offers efficient operation through low on-resistance (RDS(ON)) of just 112mΩ. The devices can support drain currents (ID) up to 3.5A. The dual MOSFETs are packaged in a tiny TSOP6F package measuring just 2.9x2.8x0.8mm, the same size as a SOT23 package and giving a footprint that is 70% smaller than that of an SOP8 package.

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