Two inverse Class F power amplifiers
working at 1 GHz and 1.8 GHz respectively have
been developed. The PAs use a LDMOS
transistor as an active element in order to
generated high efficiency with high output
power. The 1 GHz PA achieved a drain
efficiency of 77.8 % with 12.4 W of output power
and the 1.8 GHz PA a drain efficiency of 60 %
with 13 W of output power. To our knowledge
these results represent the highest efficiency and
output power for an inverse Class F PA based on
a single LDMOS transistor working at these
frequencies.

Länka till denna publikation

Dela på webben

Skapa referens, olika format (klipp och klistra)

BibTeX @article{Lepine2005,author={Lepine, Fabien and Ådahl, Andreas and Zirath, Herbert},title={L-Band LDMOS Power Amplifiers Based on an Inverse Class-F Architecture},journal={IEEE Transactions on Microwave Theory and Techniques},volume={53},issue={6},pages={2007-2012},abstract={Two inverse Class F power amplifiers
working at 1 GHz and 1.8 GHz respectively have
been developed. The PAs use a LDMOS
transistor as an active element in order to
generated high efficiency with high output
power. The 1 GHz PA achieved a drain
efficiency of 77.8 % with 12.4 W of output power
and the 1.8 GHz PA a drain efficiency of 60 %
with 13 W of output power. To our knowledge
these results represent the highest efficiency and
output power for an inverse Class F PA based on
a single LDMOS transistor working at these
frequencies.},year={2005},}

RefWorks RT Journal ArticleSR PrintID 12307A1 Lepine, FabienA1 Ådahl, AndreasA1 Zirath, HerbertT1 L-Band LDMOS Power Amplifiers Based on an Inverse Class-F ArchitectureYR 2005JF IEEE Transactions on Microwave Theory and TechniquesVO 53IS 6SP 2007OP 2012AB Two inverse Class F power amplifiers
working at 1 GHz and 1.8 GHz respectively have
been developed. The PAs use a LDMOS
transistor as an active element in order to
generated high efficiency with high output
power. The 1 GHz PA achieved a drain
efficiency of 77.8 % with 12.4 W of output power
and the 1.8 GHz PA a drain efficiency of 60 %
with 13 W of output power. To our knowledge
these results represent the highest efficiency and
output power for an inverse Class F PA based on
a single LDMOS transistor working at these
frequencies.LA engOL 30