Abstract

The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells(QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.

This work was supported by the Engineering and Physical Sciences Research Council through HYPIX Project under Grant No. EP/F05999X/1 and Ultra-parallel Visible Light Communications Project under Grant No. UP-VLC EP/K00042X/1.