Abstract

Sample devices of commercially available SiC MESFETs were measured under pulsed conditions. The results show significant improvements over traditional III-V devices measured under the same conditions. The measurements indicate that SiC devices may have several advantages for use in pulsed applications such as Phased Array Radar.

Abstract

Sample devices of commercially available SiC MESFETs were measured under pulsed conditions. The results show significant improvements over traditional III-V devices measured under the same conditions. The measurements indicate that SiC devices may have several advantages for use in pulsed applications such as Phased Array Radar.