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Abstract

Ternary logic functions are implemented through the use of insulated gate field-effect transistor (IGFET) circuits, containing devices with two different threshold voltages.

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United States

Language

English (United States)

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Multiple Threshold IGFET Ternary Circuits

Ternary logic functions are implemented through the use of insulated gate
field-effect transistor (IGFET) circuits, containing devices with two different
threshold voltages.

Ternary logic requires three voltage levels which can be obtained by using
IGFET devices, with different threshold voltages in the same circuit and selecting
the appropriate width-to-length (W/L) ratios for each device. There are several
techniques for obtaining devices with different threshold voltages. One technique
is to vary the gate oxide thickness during processing. Another technique is to
vary the source-to substrate voltage which requires isolating the devices into two
separate regions (pockets). Still another technique is to use ion implantation to
vary the background doping, as presently used to obtain depletion load devices.

To implement ternary functions, the depletion device is used as the active
device with the lower threshold voltage (V(T)1) and the enhancement mode
device as the active device with the higher threshold voltage (V(T)2).

In the figures, Fig. 1 illustrates the voltage and threshold levels for a
particular ternary logic state. Positive threshold voltages have been chosen for
algebraic simplicity, even though threshold voltages could be negative. Fig. 2A
illustrates an exemplary circuit, Fig. 2B refers to the logic definitions
corresponding to that circuit, while Fig. 2C describes the design conditions for the
circuit of 2A....