Abstract

With the use of fullerenetin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more than 5. The improvements are attributed to the reduction of the injection barrier at the ITO/pentacene interface, which can be confirmed by the work functionmeasured at the and the contact resistance obtained by transmission line method. Meanwhile, the average transmittance in the visible region with a 3.5 nm buffer layer for 65-nm-thick pentacene organic thin film transistors remains at 62.98%.

Abstract

With the use of fullerenetin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more than 5. The improvements are attributed to the reduction of the injection barrier at the ITO/pentacene interface, which can be confirmed by the work functionmeasured at the and the contact resistance obtained by transmission line method. Meanwhile, the average transmittance in the visible region with a 3.5 nm buffer layer for 65-nm-thick pentacene organic thin film transistors remains at 62.98%.