A Comparative Study of Hetero Structure Devices for Electronic Applications

Roberto Marani*, Anna Gina Perri**

* Researcher, Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy.

** Professor of Electronics and Head of Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, Bari, Italy.

Periodicity:June - August'2018

Abstract

In this paper, the authors present a comparison through a simulation study, among different hetero structure devices, like Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor (HEMT), and Tunnel Field Effect Transistor (TFET), with reference to their applications in electronic field. In particular, MESFET and HEMT present good performance in power amplifiers and they are characterized by high mobility of the charge carriers that allows to consume less at high frequency. TFET is the newest experimental device, which has a very powerful application in logic circuits, ultra low-power specific analog ICs with better temperature strength and low-power SRAM.