This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and RT-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be done down to below 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

Detailed Specifications:

1000W ICP source, 600W RF Sample Bias Source in etching chamber

RT - 350°C sample temperature

100% SiH4, Ar, N2, O2

Multiple 4” diameter wafer capable system

Pieces possible by mounting or placing on 4 ” wafer

Contact Information:

For additional information regarding the Unaxis High Density PECVD or if you would like to inquire about using the UCSB Nanofabrication Facility, please contact
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using the telephone number or e-mail address below.

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Phone: (805) 893-3918 ext. 217E-Mail:
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