Figure 5

Hemispherical reflectance spectrum measurement of Si nanostructures. Measured hemispherical reflectance spectra of the corresponding Si nanostructures fabricated using different etching temperatures from 23°C to 40°C in an aqueous solution composed of HNO3, HF, and DI water (4:1:20 v/v/v). The insets show 45° tilted-view SEM images for the corresponding Si nanostructures.