In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide () thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

Study on Current Switching in Electronic Devices Based on Vanadium Dioxide Thin Films Using CO2Laser, Journal of the Korean Institute of Illuminating and Electrical Installation Engineers, 2016, 30, 1, 1