This paper shows the results of atomistic modeling for the interaction between spherical nano abrasive and substrate in chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-Jones 12-6 potentials. The abrasive dynamics was modeled by three cases, such as slipping, rolling, and rotating. Simulation results showed that the different dynamics of the abrasive results the different features of surfaces. This model can be extended to investigate the 3-dimensional chemical mechanical polishing processes.

The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke`s law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubcs corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics o silicon nanotubes under torsion can be modelled in the continuum elasticity theory.

Transformer Coupled Plasma Chemical Vapor Deposited (TCP-CVD) silicon nitride (SiNx) is widely used as a gate dielectric material for thin film transistors (TFT). This paper reports the SiNx films, grown by TCP-CVD at the low temperature (30). Experimental investigations were carried out for the optimization o(SiNx film as a function of /SiH flow ratio varying ,3 to 50 keeping rf power of 200 W, This paper presents the dielectric studies of SiNx gate in terms of deposition rate, hydrogen content, etch rate and leakage current density characteristics lot the thin film transistor applications. And also, this work investigated means to decrease the leakage current of SiNx film by employing plasma treatment. The insulator layers were prepared by two step process; the plasma treatment and then PECVD SiNx deposition with SiH, gases.

Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO), HO, and KIO. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of AlO particles in presence of surfactant stabilizing the slurry.

A BCl/Ne plasma chemistry was used to etch Ga-based (GaAs, AIGaAs, GaSb) and In-based (InGaP, InP, InAs and InGaAsP) compound semiconductors in a Planar Inductively Coupled Plasma (ICP) reactor. The addition of the Ne instead of Ar can minimize electrical and optical damage during dry etching of III-V semiconductors due to its light mass compared to that of Ar All of the materials exhibited a maximum etch rate at BCl to Ne ratios of 0.25-0.5. Under all conditions, the Ga-based materials etched at significantly higher rates than the In-based materials, due to relatively high volatilities of their trichloride etch products (boiling point CaCl : 201 , AsCl : 130 , PCl: 76 ) compared to InCl (boiling point : 600 ). We obtained low root-mean-square(RMS) roughness of the etched sulfate of both AIGaAs and GaAs, which is quite comparable to the unetched control samples. Excellent etch anisotropy ( > 85) of the GaAs and AIGaAs in our PICP BCl/Ne etching relies on some degree of sidewall passivation by redeposition of etch products and photoresist from the mask. However, the surfaces of In-based materials are somewhat degraded during the BCl/Ne etching due to the low volatility of InCl./.

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, dielectric and piezoelectric properties of PSN-PZT[0.91Pb(Sb1/2/Nb1/2/)0.03/(Zr0.495/Ti0.505/)0.97/O-0.04Pb(Ni1/2/W1/2/)O+0.05BiFeO+0.3wt％MnO+0.6wt％CuO〕 ceramics were investigated according to Zr/Ti ratio. As Zr/Ti ratio is increased, electromechanical coupling factor(kp/) and dielectric constant increased and then decreased after the ratio of Zr/Ti

In this study, in order to develop the low temperature sintering ceramics for multi-layer piezoelectric transformer, PSN-PZT system ceramics were manufactured as a function of CuO addition and their dielectric and piezoelectric characteristics were Investigated. CuO addition facilitated densification at low temperature due to the effect of CuO-PbO liquid phase. Through the X-ray diffraction pattern study, absence of second phase unwanted was confirmed. Among the specimen to which CuO was added, the 0.6wt% CuO added specimen sintered at 900 and 920 showed the most excellent mechanical quality factor and electromechanical coupling factor, respectively. Besides the densification accelerator, CuO acted as a accepter and increased mechanical quality. Compared with the specimen with no addition sintered at 1150 , the 0.6wt% CuO added specimen sintered at 920 showed the appropriate dielectric and piezoelectric characteristics for multi-layer piezoelectric transformer.

We investigated the effects of calcination temperatures on the sintering behaviors and microwave dielectric Properties of (Z M )Ti system. Highly densified samples were obtained at the sintering temperatures below 100 with additions of 0.45 wt.%B and 0.55 wt.% . From the examination of the existing phases and microstructures before and after sintering of (Z M )Ti system which is calcined at the various temperatures ranging from 80 to 100, it was found that higher Q values were obtained when unreacted phases in calcined body were reduced. When calcined at 100 and sintered at 90, it consists of hexagonal as. a main phase with uniform microstructure and exhibits Q value of 42,000 GHz and dielectric constant of 22. 22. 22.

Recently, as the road capacity reaches the limit and environmental problems becomes serious, there is gradually increased a need for railroad vehicles that are environment-friendly and have time regularity, reliability, and safety. Accordingly, in addition to conventional railroad vehicles, lots of vehicles are being newly developed. We developed the hardware and software of the measurement system for on-line test and evaluation of korean high speed train. The software controls the hardware of the measurement system and acts as interface between users and the system hardware. In this paper, practical experiment are performed to verify mechanical performance of motor and main transformer for Korean high speed rail. The experimental test carried out by using new temperature measurement method and verify the temperature performance of motor and transformer is verified.

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is dimethyl methyl phosphonate(CP, DMMP) that is simulant gas of nerve gas. Sensing materials were Sn added a-Al with 0∼20wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor device was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Total size of device was 7100.6㎣. Crystallite size & phase identification and morphology of fabricated Sn powders were analyzed by X-ray diffraction and by a scanning electron microscope, respectively. Fabricated sensor was measured as flow type and resistance change of sensing material was monitored as real time using LabVIEW program. The best sensitivity was 75% at adding 4wt.% -Al, operating temperature 30 to DMMP 0.5ppm. Response and recovery time were about 1 and 3min., respectively. Repetition measurement was very good with 3％ in full scale.TEX>$\pm$3％ in full scale.

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100100.Q-factor was 996.68 and Keff/ was 3.91％.

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

In order to passivate the GaAs surface, silicon-nitride films were fabricated by using laser CVD method. SiH and NH were used to obtain SiN films in the range of 100∼300 on p-type (100) GaAs substrate. To determine interface characteristics of the metal-insulator-GaAs structure, electrical measurements were performed such as C-V curves and deep level transient spectroscopy (DLTS). The results show that the hysteresis was reduced and interface trap density was lowered to 1,012 ∼ 1,013 at 100 ∼ 200. According to the study of surface leakage current, the passivated CaAs has less leakage current compared to non-passivated substrate.

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and ate analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene(CH) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen(H) gas plasma indicates better vortical alignment, lower temperature process, and longer tip, compared to that grown by ammonia(NH) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be 2.6 V/ We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

In order to reduce driving power consumption, we propose and fabricate a new structure of asymmetric SOI 12 thermo-optic switch that has a back side silicon trenched structure. Compared to conventional SOI thermo optic switches without heat sink structure, it shows an improvement of switching power reduction from about 4 watt to 1.8 watt without sacrificing cross talk of about 20 ㏈ at the light wavelength of 1.55 . Here we also described the main design consideration and fabrication procedure for the proposed device.

Since the grating optical low-pass fillet degrades the resolution of images, we developed a hologram optical low-pass filter that show low degradation of the image and studied its characteristics. We designed the hologram that divides input beam into circular shaped 21 beams with a Monte-Carlo based hologram generation program and calculated its MTE characteristics to compare it with that of a grating filter. The hologram was manufactured through the optical lithography process and attached to a digital imaging device (Zoran 732212) for measurement. The moirfiltering is compared with zone plate images and the resolution loss is measured with USAF resolution chart. The hologram optical low-pass filter showed better characteristics in both moly filtering and resolution.

In order to enhance current Injection efficiency of Y-groove inner strife(VIS) quantum wire lasers, three different current configurations, n-blocking on p-substrate(VIPS), p-n-p-n blocking on n-substrate(VI(PN)nS), p-blocking on n-substrate(VINS) have been designed and fabricated. Among them VIPS laser showed the most stable characteristics of lasing up to 5 mW/facet, a threshold current of 39.9 mA at 818 nm, and an external differential quantum efficiency of 24 %/facet. The current tuning rate was almost linear 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/.

The effects of molecular structure on the redox properties are explored by the cyclic voltammetry, constant current potentiometry and spectroscopy using the thin films of organic electroluminescence materials of Poly(N-vinylcarbazole); PVK and 2- (4`-tert-butylphenyl) -5-(4"-bisphenyl) -1,3,4-oxadiazole; PBD. The UV/visible absorption maxima and band gap (Eg/) show at 310nm (4.00eV) and 368nm (3.37eV) for FBD, 344nm (3.60eV) and 356nm (3.48eV) for PVK, respectively. The measured electrochemical ionization potential (IP) and electron affinity (EA) of these materials we 5.87 and 2.82eV for PBD, 5.80 and 3.17eV for PVK, respectively. The electrical band gaps are 3.05eV for PBD and 2.78eV for PVK, respectively. The electrical hole gap and electron gap with respect to the first rising potentials and the inflection potentials are obtained to be 0.39V and 0.41V for PBD, 0.25V and 0.28V for FVK, respectively.

Quench behavior of resistive superconducting fault current limiters (SFCLS) with various pattern shapes was investigated. The pattern shapes employed were meander, bi-spiral, and spital shapes of identical line width, gap and margin. SFCLS were fabricated from YBCO thin films grown on two-inch diameter AlO substrates under the same conditions. The total length of current limiting paths was the shortest at the spital shape due to its larger useless space. Inductance component of SFCLs with the spiral shape was around two times as high as those of other two shapes. This is not desirable since impedance characteristics of existing power systems can be changed. Resistance rise of current limiting elements was low at a spiral shape before the whole quench completion, which may act as a disadvantage for simultaneous quench in serial connection between current limiting elements, but the temperature tended to have similar values at higher voltages. On the other hand, hi-spital shape was severe at insulation level between current limiting lines. When these aspects were considered, we concluded that a meander shape was appropriate to design for a resistive SFCL based on thin films except the concentration of electric field at edge areas of strip lines.

In this paper, dc reactor lot the inductive high-Tc superconducting fault current limiter (SFCL) was optimally designed by finite element method(FEM). The Prototype high-Tc do reactor was manufactured and compared to the results of design. This dc reactor consists of 4∼stacked double pancake coils which are wounded with Bi-2223 wire coated with SUS315L. Kapton tape is used for the insulation of turn to turn and layer to layer. Each pancake is connected in series by soldering Finally, optimal design and manufacture method lot the dc reactor is suggested in this paper. Through the comparison of result of optimal design and experimental result of prototype high-Tc superconducting dc reactor, reliance on the design of the high-Tc dc reactor tot the 1.2 kV/80 A SFCL is proved.

Fault current limiters (FCL) are extensively needed to suppress fault currents, especially for trunk power systems heavily connected to high voltage/large current transmission lines. Due to its ideal electrical behavior, high-temperature superconductor fault current limiter (HTSFCL) becomes one of the most important developing trends of limiters in power system. This paper describes the result of an investigation of the dielectric characteristics of turn-to-turn insulation for pancake and solenoid type reactor coil in liquid nitrogen. The influence of thickness in a variety length, on AC, DC and impulse surface flashover has been investigated. Also, the relationships between the number of turn and breakdown characteristics were clarified. The information gathered in this test series should be helpful in the design of liquid nitrogen filled DC reactor type HTSFCL.

To utilize FeCoSiB amorphous films for magnetoelastic sensors, the temperature dependency of magnetization (M-T curve) and the magnetization properties of the amorphous films were investigated in this study. As the amount of cobalt In the films increased, the Curie temperature decreased but the crystallization temperature increased. In addition to this, the crystallization temperature was lower than the Curie temperature in the film containing 20 at% cobalt. The optimized annealing condition was set up by analyzing the H-T curve. And then, the amorphous film that has excellent magnetic properties and uni-axal anisotropy could be prepared for construction of the magnetoelastic sensor devices. The coercive force of the film was below 0.5 Oe and the anisotripic field was about 5 Oe.

GIS(Gas Insulated Switchgear) is power equipment with excellent dielectric strength and is economy merit in high confidence and stability. But, because of structural characteristics, this is difficult to monitor externally and provide much loss in the event of an accident. Recently, because equipment of GIS is occurring problem of confidence used for a long time, development of diagnosis technique have been importantly recognized. therefore, measurement and analysis of PD much has been generally used for equipment of GIS. But, in case of measurement of PD at field, real trouble signals is difficult to classify noise. Accordingly, a variety of trouble conditions for DS are simulated, and detected signals are analyzed by the application of electrical and mechanical methods. For this analysis, detected signals are accumulated according to phase-magnitude with the application of induction sensor, and then we analyzed the characteristics. For the simulation experiment, we make DS for 170KV GIS and analyze the characteristics of detected signals with the application of neural network algorithm. last, we have measured DS for GIS at field, and then have analyzed detected signals.