Dynamic Systems Model for Ionic Mem-Resistors

Memristive system models have previously been proposed to describe ionic memory resistors. However, these models neglect the mass of ions and repulsive forces between ions and are not well formulated in terms of semiconductor and ionic physics. This article proposes an alternative dynamic systems model in which the system state is derived from a second order differential equation in the form of a driven damped harmonic oscillator. Application is made to Schottky and tunneling barriers.
Category:Condensed Matter

Dynamic Systems Model for Filamentary Memresistors

A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a dynamic Schottky barrier (associated with the electron depletion width surrounding the filament-electrode gap). A general model is formulated which may be applicable to many different forms of memory resistor materials. The frequency response of the model is briefly discussed.
Keywords- mem-resistor, non-linear dynamic systems, RRAM, ReRAM, Schottky junction, tunneling junction
Category:Condensed Matter

Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors

A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model.
Keywords- mem-resistor, RRAM, ReRAM
Category:Condensed Matter

Pinched Hysteresis Loops Are a Fingerprint of Square Law Capacitors

It has been claimed that pinched hysteresis curves are the fingerprint of memristors. This paper demonstrates that a linear resistor in parallel with a nonlinear, square law capacitor also produces pinched hysteresis curves. Spice simulations are performed examining the current vs. voltage behavior of this circuitry under different amplitudes and frequencies of an input signal. Based on this finding a more generalized dynamic systems model is suggested for ReRAM and neuromorphic modeling to cover a broader range of pinched hysteresis curves.
Category:Condensed Matter