depends on the diffusion length L of the semiconductor, the back surface recombination velocity Sb, the base thickness Wbas, and the minority carrier diffusion coefficient Dn [24]. The value of LQmono equals the effective current-voltage diffusion length LJ>mono, which determines the dark saturation current density

(C. ll)

of a single-sided p-n junction (Eqs. (8) and (9) of Ref. [24]). The symbol q denotes the elementary charge and nQ is the equilibrium minority carrier concentration. The quantum efficiency can therefore be used to evaluate the amount of recombination in the base of a single-crystalline solar cell [24, 177, 411].

length L, SRV Sb, and negligible recombination in the emitter would generate exactly the same short-circuit current under spatially homogeneous carrier generation as a semi­infinitely thick monocrystalline cell with a base diffusion length of Lc>mom•