Applications are invited for a fully-funded 3.5 year PhD studentship to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors.

Project description

The studentship holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced epitaxial growth and novel device fabrication of the integrated devices are essential for the project. She/he will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.

The studentship is based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.

Academic requirements

This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a strong background in semiconductor materials & physics. Candidates from a Physics department are particularly welcome. A first-degree of class 1 or 2:1 class or its international equivalent is required.

Funding notes

The studentship is fully funded for 3.5 years and is open to UK/EU applicants who meet the University’s entrance requirements (however, non-UK/EU candidates in an exceptional case will be considered). Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.