Congratulations go out to Toshiba for scoring a real technological first with its development of a gallium-nitride (GaN) power field-effect transistor (FET), designed for the Ku-band (12 to 18GHz) frequency range. So, what’s special about this tr...

Toshiba Corporation standardized on the open source Liberty Composite Current Source (CCS) modeling technology for its CMOS5/TC320C 65-nanometer (nm) production libraries.
The library is supported through Synopsys' Galaxy Design Platform, which...

Ishikawa, Japan:Toshiba Corp. and Kaga Toshiba Electronics Corp. (Kaga Toshiba) plan to build a new semiconductor production fab based on 200mm wafers. The fab is expected to increase production capacity of power devices...

Toshiba and SanDisk have opened Fab 4, a 300mm wafer fabrication facility for NAND Flash Memory at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.
Fab 4 will start mass production in December 2007 and is expected to produce 80,000 wafer...

Tokyo, Japan: According to Toshiba, its new 3D graphics chip adds previously unseen levels of realism and excitement to games played on mobile phones. The new device, the TC35711XBG, is able to render 800 Mpixels/s, which surpasses that of...

Power outages at several Samsung Electronics Co. fabs may extend the current NAND shortage, potentially boosting prices in the global NAND flash memory market, according to iSuppli.
Five of Samsung's NAND-flash production lines and one system LS...