14-NM FinFET in Microwind

Instead of a continuous channel,
the FinFET uses fins, allowing transistor be low power, faster, compact and continue scaling. FinFET provides the same Ion current at a smaller size. FinFET provides lower leakage current Ioff at the same Ion. Microwind will now allow student to explore future
technology which is different from 45 years old planar style. Learn about process variation and manufacturability issue with/without dummy gates. Planar MOS were almost about to break Moore’s law, know how FinFET kept it intact.

FinFET, also known as Fin Field Effect Transistor, is a type of non-planar or "3D" transistor used in the design of modern processors. FinFET designs also use a conducting channel that rises above the level of the insulator, creating a thin silicon structure, shaped like a fin, which is called a gate electrode. This fin-shaped electrode allows multiple gates to operate on a single transistor. This type of multi-gate process extends Moore's law, allowing semiconductor manufacturers to create CPUs and memory modules that are smaller, perform faster, and consume less energy.