Global Patent Index - EP 0836232 A4

GPI coverage and content

You can use Global Patent Index (GPI) to carry out detailed searches of the EPO’s worldwide bibliographic and legal event data collections (DOCDB and INPADOC, also used in Espacenet and PATSTAT) and download or visualise the results for statistical analysis

Current content: 123 711 965 patent documents

This week's update (05/06/2020 12:00 CET):

224 639 new documents added

1 141 291 documents amended

GPI key values

Run regular monitoring (e.g. monthly or quarterly) of technical areas or companies

Use built-in charts to visualise technical trends and patenting activity of companies

Choose the data you want to see and download to focus on what you are interested in

Run data quality assessments to measure the risk of incomplete search results

More information

GPI user manual (PDF), free trial and subscription information are available on the EPO website

Title (fr)

Publication

Application

Priority

RU 9700082 W 19970325

RU 96105544 A 19960326

RU 96112308 A 19960621

Abstract (en)

[origin: US6057556A] PCT No. PCT/RU97/00082 Sec. 371 Date Feb. 2, 1998 Sec. 102(e) Date Feb. 2, 1998 PCT Filed Mar. 25, 1997 PCT Pub. No. WO97/36333 PCT Pub. Date Oct. 2, 1997The tunnel-effect device comprises an input electrode 3, an output electrode 4, and N control electrodes 5 separated with tunneling barriers, the latter barriers and the interbarrier space therein appear as an ordered structure of molecules and clusters establishing tunneling junctions; each control electrode 5 is located in the region of the ordered structure of molecules and clusters 2. The dimensions and properties of the molecules and clusters provide for single-electron correlated electron tunneling at a relatively high (room) temperature. The tunnel-effect device functions on the base of controlled correlated electron tunneling. Possibility of controlling the tunneling current opens the way to constructing various electronic gate circuits on the base of single-electron tunneling junctions and hence to preparing single-electron analog and digital devices, in particular, high-sensitivity sensors. The method for preparing the tunnel-effect device consists in establishing on the surface of a solid-state substrate an input electrode, an output electrode, and control electrodes, followed by formation of an inert dielectric molecular matrix with orderly built-in active molecules and clusters which are the localization centers of the tunneling electrons and thus establish single-electron tunneling junctions. The effect of discrete tunneling of individual current carriers through tunneling barriers at room temperature used in the tunnel-effect device may also be applied in a single-electron transistor and used for constructing single-electron gate circuits, wherein logical "1" and "0" are identified with the presence or absence of an electron.