Abstract

The process dependence of 1/fnoise in p-type piezoresistors was investigated in this work using both electrical and materials characterization approaches. P-type piezoresistors were fabricated with 20 keV and 40 keV boron implants with and without implant oxide and varying isochronal 900 °C inert anneals. The devices were characterized electrically using I-V, Hall Effect, and power spectral density (PSD) noise measurements. The defects were visualized using cross-section transmission electron microscopy and plane view TEM The measured 1/fnoise PSDs in the p-type piezoresistors are systematically compared to the number and dimension of bulk defect densities measured with TEM after each annealing condition of the piezoresistors. The 1/fnoise PSDs of the piezoresistors implanted with 20 keV boron track the TEMdefect number densities while those implanted with 40 keV boron through SiO2 with inert and oxidizing anneals track the faulted loop areas.

[Manufacture or treatment of devices consisting of
a plurality of solid state components or integrated circuits formed in or on a common
substrate or of specific parts thereof; Manufacture of integrated circuit devices or of
specific parts thereof, Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof, Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof]