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About us

The institute investigates fundamental problems in semiconductor physics and in semiconductor materials.

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The institute investigates fundamental problems in semiconductor physics and in semiconductor materials. In the device development alternative concepts and property limits are explored, e. g. the maximum transistor frequency and the minimum transistor cross section. The epitaxy of SiGe, classical III/V compounds and of GaN is a broad activity.
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Cooperations

Our Institute cooperates with national and international companies and scientific partners:
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