Abstract

Polycrystalline (PZT)films thick on substrates were prepared at by metalorganic chemical vapor deposition(MOCVD). At , the remanent polarization of the as-deposited films was approximately . Inserting seeds between the PZT films and Ir bottom electrodes improved the crystallinity of the films markedly but improved their ferroelectric properties only slightly. Low-temperature postannealing, on the other hand, even at (i.e., below the deposition temperature), improved values and hysteresis loop shapes without obviously improving the crystallinity of the films. The electrical properties were improved even more when the films were annealed at . These results suggest that the low-temperature processing and sub-film thickness needed for making three-dimensionally structured ferroelectric capacitors can be obtained by using low-temperature MOCVD to depositPZT films, and then annealing those films at a temperature no greater than .