ALUMINUM ELECTRIC WIRE FOR AN AUTOMOBILE AND A METHOD FOR PRODUCING THE SAME - An aluminum electric wire includes an annealing conductor that is made up of elemental wires made of an aluminum alloy containing 0.90-1.20 mass % Fe, 0.10-0.25 mass % Mg, 0.01-0.05 mass % Ti, 0.0005-0.0025 mass % B, and the balance being Al and has a tensile strength of 110 MPa or more, a breaking elongation of 15% or more, and an electric conductivity of 58% IACS or more, and an insulating material covering the conductor. The wire is produced by casting an aluminum alloy prepared by rapidly solidifying a molten aluminum alloy having the above composition, producing the wires by subjecting the alloy to plasticity processing, producing the conductor by bunching the wires, subjecting the wires or the conductor to annealing at 250° C. or higher, and then covering the conductor with the insulator.

02-17-2011

20110056728

FLAME-RETARDANT COMPOSITION AND INSULATED WIRE, AND METHOD FOR PRODUCING FLAME-RETARDANT COMPOSITION - A flame-retardant composition that is more excellent in heat resistance than a conventional flame-retardant composition. The flame-retardant composition contains silane-crosslinked polyolefin, polyolefin, a metallic hydrate, a phenolic antioxidant, a sulfurous antioxidant, a metallic oxide, and a copper inhibitor. The sulfurous antioxidant is preferably a benzimidazole compound, and the metallic oxide is preferably a zinc oxide. The silane-crosslinked polyolefin is preferably polyethylene having a density of 0.880 to 0.910 g/cm

03-10-2011

20120241190

COMPOSITION FOR WIRE COATING MATERIAL, INSULATED WIRE, AND WIRING HARNESS - Provided is a composition for a wire coating material that is capable of achieving heat resistance and a mechanical property at the same time even if silane crosslinking and magnesium hydroxide that is made from a natural mineral are used in combination. The composition contains (A) silane-grafted polyolefin that defines polyolefin onto which a silane coupling agent is grafted, (B) unmodified polyolefin, (C) modified polyolefin that is modified by a functional group, (D) magnesium hydroxide that is made from a natural mineral, and (E) a cross-linking catalyst. Provided is an insulated wire including a wire coating material that contains the composition that is silane-crosslinked. Provided is a wiring harness including the insulated wire.

09-27-2012

20120273268

COMPOSITION FOR WIRE COATING MEMBER, INSULATED WIRE, AND WIRING HARNESS - A composition for a wire coating member having flame retardancy that is heat resistant and productive without using electron irradiation crosslinking, and an insulated wire and a wiring harness having the same. The insulated wire includes a wire coating member containing the composition for the wire coating member that contains water-crosslinkable polyolefin containing polyolefin that is modified by a silane coupling agent, unmodified polyolefin, modified polyolefin that is modified by a functional group, a bromine flame retardant, a cross-linking catalyst, a phenolic antioxidant, and either one of a zinc sulfide, and a zinc oxide and an imidazole compound. The insulated wire is prepared by extrusion-coating a conductor with the composition to form the wire coating member around the conductor, and the wire coating member is water-crosslinked.

11-01-2012

20130161064

COMPOSITION FOR WIRE COATING MATERIAL, INSULATED WIRE, AND WIRING HARNESS - To provide a composition for a wire coating material, which requires no electron irradiation crosslinking, and requires a filler defining a flame retardant agent as less as possible, and from which an insulated wire having a high heat resistance and a high gel fraction can be produced, and to provide an insulated wire and a wiring harness containing the composition. The composition contains (A) silane-grafted polyolefin, which is polyolefin to which a silane coupling agent is grafted, (B) undenatured polyolefin, (C) functional-group modified polyolefin modified by one or more functional groups selected from a carboxylic acid group, an acid anhydride group, an amino group, and an epoxy group, (D) a bromine flame retardant having a phthalimide structure, or a bromine flame retardant having a phthalimide structure and an antimony trioxide, (E) a crosslinking catalyst, and (F) a zinc sulfide, or a zinc oxide and an imidazole compound.

06-27-2013

20130255840

ALUMINUM ELECTRIC WIRE FOR AN AUTOMOBILE AND A METHOD FOR PRODUCING THE SAME - An aluminum electric wire includes an annealing conductor that is made up of elemental wires made of an aluminum alloy containing 0.90-1.20 mass % Fe, 0.10-0.25 mass % Mg, 0.01-0.05 mass % Ti, 0.0005-0.0025 mass % B, and the balance being Al and has a tensile strength of 110 MPa or more, a breaking elongation of 15% or more, and an electric conductivity of 58% IACS or more, and an insulating material covering the conductor. The wire is produced by casting an aluminum alloy prepared by rapidly solidifying a molten aluminum alloy having the above composition, producing the wires by subjecting the alloy to plasticity processing, producing the conductor by bunching the wires, subjecting the wires or the conductor to annealing at 250° C. or higher, and then covering the conductor with the insulator.

10-03-2013

20130273367

COMPOSITION FOR WIRE COATING MATERIAL, INSULATED WIRE, AND WIRING HARNESS - To provide a composition for a wire coating material, requiring no electron irradiation crosslinking and a less filler, that can produce a crosslinked coat having a high heat resistance, gel fraction and peel property at high temperature, and provide an insulated wire, and a wiring harness. A wire coating material composition contains (A) silane-grafted polyolefin, (B) undenatured polyolefin, (C) functional-group modified polyolefin modified by functional groups of a carboxylic acid group, an acid anhydride group, an amino group and an epoxy group, (D) a bromine flame retardant having a phthalimide structure or the flame retardant and an antimony trioxide, (E) a crosslinking catalyst batch containing a resin containing a crosslinking catalyst, and (F) a zinc oxide and an imidazole compound or a zinc sulfide, (G) a triazine hindered phenolic antioxidant having a melting point of 150 degrees C. or more, and (H) a triazole derivative or a hydrazide metal deactivator.

10-17-2013

Patent applications by Masashi Kimura, Yokkaichi-Shi JP

Shinsuke Kimura, Yokkaichi-Shi JP

Patent application number

Description

Published

20110139192

SURFACE TREATMENT APPARATUS AND METHOD FOR SEMICONDUCTOR SUBSTRATE - In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.

06-16-2011

20110143541

APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE - In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

06-16-2011

20110143545

APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE - In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon and rotates the semiconductor substrate, a first supply unit which supplies a chemical and/or pure water to the surface of the semiconductor substrate, and a second supply unit which supplies a diluted water repellent to the surface of the semiconductor substrate to form a water-repellent protective film on the surface of the convex pattern. The second supply unit comprises a buffer tank which stores the water repellent, a first supply line which supplies a purge gas to the buffer tank, a second supply line which supplies a diluent, a pump which sends off the water repellent within the buffer tank, a third supply line which supplies the water repellent sent off from the pump, and a mixing valve which mixes the diluent and the water repellent to produce the diluted water repellent.

06-16-2011

20110269313

SEMICONDUCTOR SUBSTRATE SURFACE TREATMENT METHOD - In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.

11-03-2011

20140206202

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.