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Resumen

Intermediate band solar cells (IBSCs) are a new kind of devices capable of surpassing the Shockley Queisser efficiency limit for conventional solar cells. This novel technology requires the use of a new type of material named intermediate band (IB) material which makes a better use of the solar spectrum thanks to the existence of a collection of electronic levels within the band gap of the semiconductor. Quantum Dots (QDs) remain as a feasible technology to implement IB materials. InAs/GaAs QD-IBSCs were manufactured in order to test the validity of the concept, although their real size and shape are far from the optimum. This causes extra electron levels to appear within the nanostructure confining potential, degrading the performance of the device. In this paper, the effect of these extra levels will be studied through a multiple level IBSC model based on the detailed balance, but modified so a term accounting for the non-radiative recombination (NRR) is also included. The model is completed with constant fitting parameters so the concentration JL-VOC curves (which do not incorporate series resistance effects) can be fitted. Several QD-IBSCs where manufactured, measured and fitted with this model, rendering relevant information about the recombination nature of the QD-IBSCs.