Vishay D series MOSFETs

Vishay Intertechnology Inc. has started to sample the first devices in its next-generation D Series of high-voltage power MOSFETs. The new 400 V, 500 V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages.

Based on a new high-voltage stripe technology, the D Series MOSFETs enable new levels of efficiency and power density. The devices' stripe design — with a smaller die size and terminations — lowers the total gate charge by 50 % compared with previous-generation products while increasing switching speed and reducing on-resistance and input capacitance.

With gate charges down to 9 nC for the 400 V devices, 6 nC for the 500 V devices, and 45 nC for the 600 V devices, the D Series MOSFETs offer best-in-class gate charge times on-resistance — a key figure of merit (FOM) for MOSFETs used in power conversion applications — down to 7.65 O-nC, 15.6 O-nC, and 12.3 O-nC, respectively.

The new D Series MOSFETs feature simple gate-drive circuitry and high body diode ruggedness, and they are easy to design into more compact, lighter, and cooler end products. The devices are RoHS-compliant, halogen-free according to the IEC 61249-2-21 definition, and avalanche (UIS)-rated for reliable operation.