Authors

Document Type

Article

Publication Date

10-1-1994

Abstract

We have observed a number of allowed and parity-forbidden Landau-level transitions in a modulation-doped GaAs-AlxGa1-xAs single heterojunction structure using photoluminescence-excitation spectroscopy at 2 K. The GaAs layer in this structure is 5000 Å thick. From the allowed Landau-level transitions we determine the reduced mass of the electron-hole pair to be 0.07me. Using a heavy-hole mass of 0.45me, we determine the average value of the electron effective mass to be 0.084me. From the parity-forbidden transitions where the hole Landau level is the same but the electron Landau levels are different, we determine the average value of the electron mass to be 0.085me, in excellent agreement with the value determined from the allowed transitions.