3. A JFET is also called …………… transistor1. unipolar2. bipolar3. unijunction4. none of the aboveAns : 14. A JFET is a ………… driven device1. current2. voltage3. both current and voltage4. none of the aboveAns : 25. The gate of a JFET is ………… biased1. reverse2. forward3. reverse as well as forward4. none of the aboveAns : 16. The input impedance of a JFET is …………. that of an ordinarytransistor1. equal to2. less than3. more than4. none of the aboveAns : 37. In a p-channel JFET, the charge carriers are …………..1. electrons2. holes3. both electrons and holes4. none of the aboveAns : 28. When drain voltage equals the pinch-off-voltage, then draincurrent …………. with the increase in drain voltage1. decreases2. increases3. remains constant4. none of the aboveAns : 39. If the reverse bias on the gate of a JFET is increased, then width ofthe conducting channel …………..1. is decreased2. is increased3. remains the same4. none of the aboveAns : 110. A MOSFET has …………… terminals1. two2. five3. four4. threeAns : 411. A MOSFET can be operated with ……………..negative gate voltage onlypositive gate voltage onlypositive as well as negative gate voltagenone of the aboveAns : 312. A JFET has ……….. power gainsmallvery highvery smallnone of the aboveAns : 213. The input control parameter of a JFET is ……………gate voltagesource voltagedrain voltagegate currentAns : 114. A common base configuration of a pnp transistor is analogous to ………… of aJFETcommon source configurationcommon drain configurationcommon gate configurationnone of the aboveAns : 315. A JFET has high input impedance because …………it is made of semiconductor materialinput is reverse biasedof impurity atomsnone of the aboveAns : 216. In a JFET, when drain voltage is equal to pinch-off voltage, the depletionlayers ………almost touch each otherhave large gaphave moderate gapnone of the aboveAns : 117. In a JFET, IDSS is known as …………..drain to source currentdrain to source current with gate shorteddrain to source current with gate opennone of the aboveAns : 218. The two important advantages of a JFET are …………..high input impedance and square-law propertyinexpensive and high output impedancelow input impedance and high output impedancenone of the aboveAns : 119. …………. has the lowest noise-leveltriodeordinary trnsistortetrodeJFETAns : 4

20. A MOSFET is sometimes called ………. JFETmany gateopen gateinsulated gateshorted gateAns : 321. Which of the following devices has the highest input impedance?JFETMOSFETCrystal diodeordinary transistorAns : 222. A MOSFET uses the electric field of a ………. to control the channel currentcapacitorbatterygeneratornone of the aboveAns : 123. The pinch-off voltage in a JFET is analogous to ………. voltage in a vacuumtubeanodecathodegrid cut offnone of the aboveAns : 325. In class A operation, the input circuit of a JFET is ………. biasedforwardreversenotnone of the aboveAns : 226. If the gate of a JFET is made less negative, the width of the conductingchannel……….remains the sameis decreasedis increasednone of the aboveAns : 327. The pinch-off voltage of a JFET is about ……….5 V0.6 V15 V25 VAns : 128. The input impedance of a MOSFET is of the order of ………..Oafew hundred OkOseveral MOAns : 429. The gate voltage in a JFET at which drain current becomes zero iscalled ……….. voltagesaturationpinch-offactivecut-offAns : 231. In a FET, there are ……….. pn junctions at the sidesthreefourfivetwoAns : 432. The transconductance of a JFET ranges from ……………..100 to 500 mA/V500 to 1000 mA/V0.5 to 30 mA/Vabove 1000 mA/VAns : 333. The source terminal of a JEFT corresponds to ………….. of a vacuum tubeplatecathodegridnone of the aboveAns : 234. The output characteristics of a JFET closely resemble the outputcharacteristics of a ………. valvepentodetetrodetriodediodeAns : 1

35. If the cross-sectional area of the channel in n-channel JEFT increases, thedrain current ……….is increasedis decreasedremains the samenone of the aboveAns : 136. The channel of a JFET is between the …………….gate and draindrain and sourcegate and sourceinput and outputAns : 237. For VGS = 0 V, the drain current becomes constant when VDS exceeds ………cut offVDDVPo VAns : 338. A certain JFET data sheet gives VGS(off) = -4 V. The pinch-off voltage Vpis ……..+4 V-4 Vdependent on VGSdata insufficientAns : 139. The constant-current region of a JFET lies betweencut off and saturationcut off and pinch-offo and IDSSpinch-off and breakdownAns : 440. At cut-off, the JFET channel is ……….at its widest pointcompletely closed by the depletion regionextremely narrowreverse baisedAns : 241. A MOSFET differs from a JFET mainly because ………………of power ratingthe MOSFET has two gatesthe JFET has a pn junctionnone of the aboveAns : 3

42. A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS =20mA and VGS(off) = -5 V. The value of the drain current is …………20 mA0 mA40 mA10 mAAns : 143. A n-channel D-MOSFET with a positive VGS is operating in …………the depletion-modethe enhancement-modecut offsaturationAns : 244. A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= 0V, the draincurrent is ……….0 mAID(on)maximumIDSSAns : 145. In a common-source JFET amplifier, the output voltage is …………………180o out of phase with the inputin phase with the input90o out of phase with the inputtaken at the sourceAns : 146. In a certain common-source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs =280 mV r.m.s. The voltage gain is …………111.48.753.2Ans : 247. In a certain CS JFET amplifier, RD= 1kO , RS= 560 O , VDD=10V and gm=4500 μS. If the source resistor is completely bypassed, the voltage gain is …………450452.524.5Ans : 4