GaN-on-SiC Device Hoists 40 W at 3 GHz

Model XPT1015 is a +28-VDC GaN-on-silicon high-electronic-mobility-transistor (HEMT) power transistor from Nitronex Corp. capable of 40-W output power from DC to 2.5 GHz. The transistor, which is ideal for commercial, industrial, and military markets, boasts 17.5-dB small-signal gain and 65% peak drain efficiency at 2 GHz. It features thermal resistance at 1.9C/W. The device is fabricated using Nitronex's patented SIGANTIC GaN-on-Si process, which is based on industry-standard 4-in. silicon wafers.