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Abstract

An infrared (IR) polarizer with tungsten silicide (WSi) wire grid was fabricated by two-beam interference exposure and reactive ion etching. To enhance TM transmittance, silicon monoxide was deposited between the WSi wire grid (400nm period) and a Si substrate. The transmittance was over 80% in the 4–5μm wavelength range. The ratio of TM and TE transmittances was over 100 (20dB) in the 2.5–6μm wavelength range. The fabricated polarizer has higher durability and bettter compatibility with microfabrication processes compared with conventional IR polarizers.

References

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