Abstract

An order network of oxide precipitates has been found in the monocrystalline superficial silicon layer of a silicon‐on‐insulator structure obtained by high‐dose oxygen implantation. The network consists of oxide precipitates 2 nm in size spaced about 5 nm apart. Electron diffractionpatterns indicate that ordering occurs both parallel and perpendicular to the surface along the 〈100〉 directions of the silicon lattice. The precipitate network has a cubic symmetry.