Tadashi SAKAI1

Nanocarbons, such as graphene and carbon nanotubes (CNTs), are expected to be the future of LSI interconnect materials. We have developed nanocarbon growth methods at low-temperatures (400-650°C) which are essential for the back end of line (BEOL) interconnect processes. Further, by applying these growth methods, the fabrication processes for nanocarbon interconnect structures have been demonstrated on 300 mm silicon wafers.