Cree has introduced a 1700 volt 4.9 Amp silicon carbide mosfet. The C2M1000170D is for high speed/voltage switchmode supplies. I wonder if it would make a nice high power RF device in class E. It only has 69 watts dissipation rating in TO247-3 case. What the heck is that about? Cin is 191 pF, Cout is 12 pF. 46 nS rise time.