Home » Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

TITLE

Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

AUTHOR(S)

Bell, L. D.; Kaiser, W. J.; Hecht, M. H.; Grunthaner, F. J.

PUB. DATE

January 1988

SOURCE

Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p278

SOURCE TYPE

Academic Journal

DOC. TYPE

Article

ABSTRACT

Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

The electrical transport properties of three types of manganese silicide nanocontacts, including tabular island/Si(111), nanowire/Si(111), and three-dimensional island/Si(111), are investigated by a scanning tunneling microscope with tip contacting the silicide islands. All current-voltage...

Presents information on a study which investigated the temperature dependence of Schottky barrier heights on silicon. Experimental procedures; Measurement of temperature coefficients; Discussion of the results.

We present an analytic model for the current-voltage (I-V) behavior for a nanoscale Schottky contact, emphasizing the role of minority carriers. The minority carriers give rise to a surface recombination current that can strongly dominate the majority current flow throughout the bias range. The...

Scanning tunneling spectroscopy was performed on a (15,0) single wall carbon nanotube partially wrapped by poly(3-hexyl-thiophene). On the bare nanotube section, the local density of states is in good agreement with the theoretical model based on local density approximation and remarkably is not...

Describes the planar back-to-back Schottky-barrier silicon position sensor. Vibration-limited optical-position sensitivity of the device; Relation between circuit photocurrent response and detector gap; Response time of the unbiased device.

Examines the fabrication of platinumsilicide Schottky diodes on p-silicon substrates structured with a dry-etched lamellar grating. Dependence of detector sensitivity on the polarization of the radiation; Enhancement of responsivity up to 70%; Comparison of reference diodes from different wafers.