Abstract

We have successfully developed a 100WAlGaN/GaN power amplifier with a bandwidth of 300MHzin S-band, operating at 50V drain bias voltage. This amplifier consists of one HEMT die developed for L/S-band frequency operation and a single-ended package. The developed amplifier has an output power of 100W and ahigh linear gain of more than 13.5dB in the frequency range of 2.6GHz to 2.9GHz under CW or pulsed conditions [200usec (pulse width) and 2msec (period)]. High drain efficiency of 58% was also achieved at an output power of100W and frequency of 2.8GHz. To the best of our knowledge this is the first report of 100W AlGaN/GaNHEMT amplifier developed for S-band high powerapplication.

Abstract

We have successfully developed a 100WAlGaN/GaN power amplifier with a bandwidth of 300MHzin S-band, operating at 50V drain bias voltage. This amplifier consists of one HEMT die developed for L/S-band frequency operation and a single-ended package. The developed amplifier has an output power of 100W and ahigh linear gain of more than 13.5dB in the frequency range of 2.6GHz to 2.9GHz under CW or pulsed conditions [200usec (pulse width) and 2msec (period)]. High drain efficiency of 58% was also achieved at an output power of100W and frequency of 2.8GHz. To the best of our knowledge this is the first report of 100W AlGaN/GaNHEMT amplifier developed for S-band high powerapplication.