"But what if there were a Class D transistor technology with switching so precise that it could generate a near perfect power representation of the small audio signal produced by the PWM Modulator, thus reducing (or fully eliminating) the need for these large amounts of feedback? What if the technology were so disruptive that the bandwidth of the output filter could be doubled for High-Definition Audio without fear of increased EMI/EMC problems? And, what if the switching technology of a Class D audio amplifier could boast an "On" resistance with switching losses that were so low that power dissipation became negligible, thereby enabling the world to enjoy the benefits of Class D, at or above the quality of Class A?

In fact, that transistor technology is available today and is increasingly being used by manufacturers to create near perfect sound quality for Class D audio systems. The greater switching speed of Efficient Power Conversion's (EPC's) eGaN® FETs allow amplifier designers to increase PWM switching frequencies, reduce dead-time, and drastically reduce feedback; in turn, producing a sound quality previously limited to large, complex, heavy Class A amplifier systems. Further, this innovative high-speed switching technology has already disrupted myriad other industries, including telecommunications, medical, and automotive to name a few.

AR-amp pic2.tifThis transistor technology is called Gallium Nitride (GaN) and is poised to uproot the high-end audio world. In fact, GaN-based Class D is much more power-efficient than traditional, MOSFET-based Class D and offers orders of magnitude better performance. Performance that to many listeners, even surpasses the quality of Class A. At any given product price point, these new Class D solutions can meet, or surpass the quality of today's linear amplifier solutions. As an example, the eGaN FET-based Class D amplifiers can easily achieve a mid-band THD performance of 0.005%, where a comparable linear amplifier Class would achieve around 0.05%."