Abstract

The recombination dynamics of vapor-liquid-solid grown GaAs-nanowires with an axial p-n heterojunction is investigated by spatially and time-resolvedphotoluminescencespectroscopy. By scanning across the doping transition of single p-n and n-p dopednanowires, respectively, the particular influence of surface losses in differently doped areas is studied. We found a significantly reduced non-radiative recombination for the n-doped region compared to the p-doped one, which can be attributed to suppressed surface losses because of the characteristic band bending at the surface.

[Manufacture or treatment of devices consisting of
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