PROBLEM TO BE SOLVED: To provide a resist material suitable for good liquid-immersion lithography, and to provide a pattern-forming method.SOLUTION: The polymer compound contains general formulas in the figure, and has 1,000-500,000 Mw (weight average molecular weight). In the formulas, R1a, R1b and ...

PROBLEM TO BE SOLVED: To provide a resist material having good barrier performance to water, capable of suppressing dissolution of a resist film thereof in water, having a large backward contact angle to water, capable of eliminating liquid droplet residues, having excellent process applicability wi ...

PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition suitable for resist patterning on a substrate whose surface has steps, to provide a method for manufacturing a semiconductor device using the composition and to provide a semiconductor substrate.SOLUTION: In the method f ...

PROBLEM TO BE SOLVED: To provide a positive-type resist material wherein the pattern degradation during developing operation is inhibited and the mask error factor is reduced.SOLUTION: The resist material is a resin wherein the rate of dissolution into an alkali developer is increased by the action ...

PROBLEM TO BE SOLVED: To prevent (1) inter-mixing of the protective layer and the photoresist layer and prevent (2) defects by making the resist surface more hydrophilic after developing in an immersion lithography process which inserts water between the protective layer and the projection lens on t ...

PROBLEM TO BE SOLVED: To provide a resist material to be used for immersion lithography of microfabrication in the manufacturing process of a semiconductor device, or the like, and a resist pattern forming process using the same.SOLUTION: The resist material comprises a high molecular compound used ...

PROBLEM TO BE SOLVED: To provide a pattern forming method effective for reducing the pitch between patterns by forming a line pattern in a space area of a pattern formed by the first exposure by the second exposure, and resist material for use therein.SOLUTION: The pattern forming method includes: a ...

PROBLEM TO BE SOLVED: To provide a patterning process in which a first resist film is cured by irradiation with ultrashort-wavelength light of ≤180 nm wavelength to prevent mixing of the first and second resist films and dissolution of a first resist pattern in a developer in second development.SOLU ...

PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and therefore useful for microfabrication for manufacturing a VLSI by electron beams or far ultraviolet rays.SOLUTION: The resin whose dissolution rat ...

PROBLEM TO BE SOLVED: To provide a resist material having good appliability, suppressing the generation of micro-bubbles in a solution and less liable to cause various defects that cause the lowering of yield in a device process and to provide a pattern forming method.SOLUTION: The resist material c ...