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Abstract

In this paper, key issues of salicide process are studied for a variety of additional nitrogen (N) implantation step. As devices are scaled down to deep sub-micron level, transformation of TiSi2 from the high resistivity metastable C49-phase to fmal C54-phase is retarded. Different techniques had been developed to enhance the silicidation process, including PAT (pre-amorphization implant) to enhance C54-phase TiSi2 nucleation, and ITM (Jmplant through metal) to iniroduce Ti/Si interface-mixing. It is of great interest to thrther improve the process such that the use of self-aligned TiSi2 process can be further extended down to deep sub-micron devices without switching to other materials. Impact of incorporating N implantation into the conventional self-aligned TiSi2 sub-micron CMOS devices is presented. Silicidation reaction is found to be enhanced by N implantation. As a result, lower sheet resistance is achieved on narrow polysilicon line. Low energy and dosage ion-implantation conditions are preferred in order to minimise the gate to source/drain leakage. p+ and n+ junction leakage will be further discussed in this article. This is the very first study on the effect of N ion-implantation on silicidation reaction. SEM and AFM were used to study the impact of N incorporation, cross-section TEM were perfonned to study the defects generated after N implantation. Keywords: N ion-implantation, RTA, TiSi2, sheet resistance, gate to source/drain leakage, junction leakage, salicide process, defects

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Journal of Applied Remote SensingJournal of Astronomical Telescopes Instruments and SystemsJournal of Biomedical OpticsJournal of Electronic ImagingJournal of Medical ImagingJournal of Micro/Nanolithography, MEMS, and MOEMSJournal of NanophotonicsJournal of Photonics for EnergyNeurophotonicsOptical EngineeringSPIE Reviews