I ran a load of 12 wafers through a combined time of 16.9 min (3.9 + 13). Measured LTO thickness (nanospec, forced standard oxide RI) on 5 monitors from one end of the load to another gave an overall average of 1405A (std dev=99A). Typical intra wafer std dev ranged from 52-97A. The average extracted dep rate of 83.1A/min is more than 2X lower than historical LTO400 dep rates (~ 200A/min). Previous two users who ran before me also noticed this problem.