Abstract

In this letter, we present the effects of the nitrogen-incorporated interface on threshold voltage shift , which was induced by charge trapping and detrapping in hafnium oxide -metal–oxide–semiconductor field-effect transistors. Under the various gate voltage conditions, the nitrogen-incorporated interface showed a smaller ratio of interfacecharge density to total charge density due to its thinner interface thickness and lower energy band offset. In addition, the degradations of the interface quality and the mobility under the stress condition were less severe for the nitrogen-incorporated interface devices.