The TI LMG3410R070 GaN power stage, available from Mouser Electronics, features an integrated gate driver and robust protection to offer improved performance compared with silicon MOSFETS and integrated-gate bipolar transistors (IGBTs). The device delivers zero common source inductance, a user-adjustable slew rate of 25 to 100 V/ns, and a 20 ns propagation delay for mHZ operation. The robust IC features over-current protection with greater than 150 V/ns slew rate immunity, over-temperature protection, and transient over-voltage immunity, as well as overvoltage lockout protection on all supply rails. Housed in a compact, 8 mm × 8 mm QFN package, the LMG3410R070 power stage requires no external protection components, allowing for simplified design and layout processes.

The powerful LMG3410R070 is well suited for performance with the KC-LINK surface mount capacitors from KEMET Electronics. Designed to meet the demands of fast-switching semiconductors like the TI LMG3410R070 IC, the KC-LINK capacitors feature extremely low effective series resistance and thermal resistance, allowing the devices to withstand the stress of high-frequency, high-voltage DC link applications.

The superior power density offered by the TI LMG3410R070 power stage enables efficient topologies like the totem-pole PFC, delivering a power supply-size reduction of up to 50 percent. The LMG3410R070 IC is ideal for applications including multi-level converters, solar inverters, high voltage battery chargers, and uninterruptible power supplies.

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