Abstract

A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.

Original language

English

Title of host publication

Proceedings of SPIE - The International Society for Optical Engineering

abstract = "A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.",

N2 - A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.

AB - A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.