Abstract

TiO2 films with thicknesses (d) above 15 nm were grown on optically polished surfaces of MgO (001) substrates held at 400 °C by sputtering a Ti target with an argon-ion beam when the partial pressure of O2 was kept at 1.1 × 10-2 Pa. X-ray diffraction patterns show that TiO2 films with d < 56 nm are composed of an a-axis anatase-type structure, whereas those with d > 56 nm are composed of a mixture of phases with the c-axis parallel to the film surface. The thickness dependence of the infrared reflection–absorption spectra shows that TiO2 films with d < 56 nm are composed of both anatase and amorphous phases, whereas those with d > 56 nm are composed of anatase, rutile, and amorphous phases. The crystallinity in TiO2 films is also evaluated from the infrared reflection–absorption spectra by comparison of the observed and the calculated results determined from the dielectric function of anisotropic TiO2 bulk single crystal.

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