2010

Product Catalog

Discrete Semiconductors

Bipolar Transistors Digital Transistors

Bipolar TransistorsROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

Digital TransistorsDigital transistors, pioneered by ROHM, incorporate resistor(s) for digital circuits. The broad lineup includes space-saving, ultra-compact types available in a range of internal resistance configurations.

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

Transistors for Solenoid/Motor/Relay Drive

40% smaller mounting areaSummary Features Applications

All functions required for motor drive, including the clamping diode, current limiting resistor, and protection resistor, are integrated into one package, reducing mounting area by 40% over discrete solutions.

High breakdown resistance in a space-saving design

Back EMF generated by coils in the motor is absorbed by t h e bu i l t - i n c l a m p d i o d e fe a t u r i n g h i g h b r e a k d ow n resistance. Current limiting and protection resistors are also integrated, reducing mounting area by up to 40%.

Monolithic Motor Drive Solution

Current Limiting Resistor R1

Malfunction Prevention Resistor R2

Clamping Diode Current Limiting Resistor Transistor

Clamping Diode

Mounting area Reduced

TransistorMalfunction Prevention Resistor

40

Transistor for Solenoid Motor Driver

Characteristics Comparison The die is protected from back electromotive force by the internal clamping diode. No clamping diodeBack electromotive voltage

Switching in portable devices DC/DC converters

IC/I B = 20 Pulsed Ta = 25C

2SB16902SB1197K

products, contributing to increased power savings. The broad lineup is available in a number of package types, including VMT3 and MPT3 with collector currents up to 6A. Optimized for a variety of applications, especially portables.

QSZ1 QSZ2 QSZ3 QSZ4

2 A 270 to 680 2 A 270 to 680 1.5 A 270 to 680 1.5 A 270 to 680 3 A 270 to 680 3 A 270 to 680 2 A 270 to 680 2 A 270 to 680 500 200 270 to 680

DC/DC Converter

EML4 PNPDi

UML4N

EML6

FML9

US5L9

QSL9

1.5 A 270 to 680 700 1 A 270 to 680 700 500 200 270 to 680

DC/DC Converter

US5L11

QSL11

UML6N

NPNDi

FML10

US5L10 US5L12

QSL10 QSL12

1.5 A 270 to 680 700 1 A 270 to 680 700

Note : Pin 1 is located at the upper right in the equivalent circuit diagrams for EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5, and TSMT6 Pin 1 is located at the lower right in the equivalent circuit diagrams for SMT5 and SMT6

General Purpose Amplification

Low VCE sat

Driver High-speed Switching High hFE and Muting High Breakdown Voltage High Frequency Darlington3

25 0.3 VEBO

20 50 300 25 6 20 11 32

0.5 0.15 0.1 0.05 0.05 0.05 0.05 0.3

32 VCES 0.3

1 : When mounted on a recommended land pattern 2 : For hFE, please refer to the specifications 3 : For the internal circuit, please refer to the specifications Note : (-) symbol omitted for PNP elements

120 to 390 120 to 390 180 to 560 270 to 680 120 to 560120 to 270/ 180 to 390

General Purpose Amplification

2SA1576UB

Low VCE sat

270 to 680 270 to 680 270 to 680 270 to 680 270 to 680 120 to 390 120 to 390 120 to 390 120 to 390120 to 270/ 120 to 390

Driver High-speed Switching High hFE and Muting High Breakdown Voltage High Frequency Darlington3

820 to 2700 820 to 2700 820 to 2700 56 to 120 82 to 180 (fT300MHz) 180 to 560 (fT800MHz) 82 to 180 (fT1500MHz) 56 to 180 (fT3200MHz) 5k or more 5k or more

20 50 300 25 6 20 11 3032 VCES

1 : When mounted on a recommended land pattern 2 : For hFE, please refer to the specifications 3 : For the internal circuit, please refer to the specifications Note : (-) symbol omitted for PNP elements

270 to 680 270 to 680

120 to 390/ 180 to 560

120 to 390180 to 560/ 120 to 390

270 to 680 270 to 680 200 to 500 200 to 500 200 to 500 120 to 390 120 to 390 180 to 450 180 to 450 180 to 450 120 to 390 120 to 270 120 to 270 120 to 390 120 to 390 120 to 390 120 to 39082 to 180/ 120 to 270 120 to 270/ 120 to 390

820 to 1800 390 to 820 820 to 1800 560 to 1800 2k or more 1k to 10k 1k to 10k

1 : When mounted on a recommended land pattern 2 : For hFE, please refer to the specifications 3 : For the internal circuit, please refer to the specifications Note : (-) symbol omitted for PNP elements Under development

General Purpose Amplification

2SC2389S 2SD1468S 2SD2687S

180 to 560 120 to 390 350 to 680 120 to 390 120 to 390 120 to 390 120 to 390 120 to 390 120 to 270 120 to 390 120 to 390 120 to 390 120 to 390 100 to 200120 to 270/ 120 to 390 120 to 270/ 120 to 390

Low sat VCE

2SA1585S 2SA854S 2SA1515S

5

2SC4115S 2SC1741S

2SC1741AS 2SD1768S 2SD2705S 2SD2144S 2SD2227S 2SC3415S 2SC2058S

Driver

High-speed Switching

High hFE and Muting

High Breakdown Voltage High Frequency

820 to 2700 820 to 2700 820 to 2700 56 to 120 82 to 180 (fT300MHz) 1k to 10k 1k to 2.5k 1k to 10k

Darlington

1 : When mounted on a recommended land pattern 2 : When mounted on a 1.7mm board with copper foil no greater than cm 2 in area 3 : For hFE, please refer to the specifications 4 : For the internal circuit, please refer to the specifications 5 : Pc=0.4W supplied Note : (-) symbol omitted for PNP elements

Driver Amplifier Inverter Driver

120 or more 120 to 560 120 or more 270 to 680 180 to 390 to 390 to 390 to 270

PNP NPN Preamp

VT6Z1 VT6Z2 DC/DC Converter

1 A 1 A 120 2 A 120 2 A 3 A 3 A 120

2SA1037AK 2SC2412K 2SA2018 2SC2412K

2SB1690 2SD2653 2SB1695 2SD2657 2SB1705 2SD2670 2SB1706 2SD2671

50 50 12 5020 20 50 50 12 12 30 30 12 12 30 30

150 150 500 150

200 200 100 100

120 to 560 270 to 680 120 to 560 120 to 560 120 to 560

2 A 270 to 680 2 A 1.5 A 1.5 A 270680 3 A 3 A 270 to 680 2 A 2 A 270 to 680

Pin 1 is located at the upper right in the equivalent circuit diagrams for EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5, and TSMT6 Pin 1 is located at the lower right in the equivalent circuit diagrams for SMT5 and SMT6

270 to 680 68 or more 180 to 390 68 or more 270 to 680 100 to 600 140 or more 270 to 680 60 or more 270 to 680 120 or more 270 to 680

PNPDTR UMF28N

PNP N-ch MOS

EMF6

UMF6N

Power ManagementPNP-DTR N-ch MOS

EMF32

UMF32N

EMF33

NPNDTR NPN N-ch MOS

EMF8

UMF8N

EMF9

UMF9N

UML1N

UML4N

PNPDi FML9 US5L9 QSL9

1.5 A270 to 680 700 1 A 270 to 680 700 100 100 68 or more

QSL11

PNP-DTR Di

EML17

DC/DC Converter UML2N

150 120 or more 100 500 200 270 to 680

UML6N

NPNDi FML10 US5L10 QSL10

1.5 A 270 to 680 700 1 A 270 to 680 700 100 100 150 Iz=5 80 or more 120 to 270

US5L12

QSL12

NPN-DTR Di NPNDi Shunt Regulator

EML20

EML22

UML23N

Pin 1 is located at the upper right in the equivalent circuit diagrams for EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5, and TSMT6 Pin 1 is located at the lower right in the equivalent circuit diagrams for SMT5 and SMT6

R1R2 Potential Divider Type

100 100

200 120 or more 500 120 or more 500 500 500 500 100 100 100 100 100 100 70 50 100 30 33 or more 39 or more 47 or more 56 or more 33 or more 33 or more 80 or more 30 or more 80 or more 24 or more 68 or more 68 or more 33 or more 56 or more

R1R2 Leak Absorption Type

200 140 or more 200 140 or more 200 140 or more 200 150 or more 500 140 or more 500 140 or more 500 140 or more 500 150 or more 500 500 100 100 100 100 100 100 100 100 500 500 500 600 600 600 100 100 100 100 500 56 or more 56 or more 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 100 to 600 820 to 2700 820 to 2700 820 to 2700 30 or more 68 or more 68 or more 68 or more 56 or more

UMD2N UMD3N UMD4N UMD12N UMD5N UMD9N UMD22N

IMD2A IMD3A IMD9A

Potential Divider Type

EMD4 EMD12 EMD5 EMD9

Leak Absorption Type

EMD22

PNPNPN

EMD38

Input Resistor Type

EMD6

UMD6N

IMD6A

EMD29 EMD30

IMD10A IMD16A

Power Management

DTC114T

DTC115T

Pin 1 is located at the upper right in the equivalent circuit diagrams for EMT5, EMT6, UMT5, UMT6, TUMT5, TUMT6, TSMT5, and TSMT6 Pin 1 is located at the lower right in the equivalent circuit diagrams for SMT5 and SMT6.

Bipolar Transistors / Digital Transistors

18

Discrete Semiconductors

Dimensions0.14

1.26 5 4

0.5

1.2 0.921

0.14

0.16 0.13

0.4 0.4 0.8 0.1

Notes : 1) Characters in ( ) under package designation signify the JEITA No. while characters in < > denote the JEDEC No. 2) For more detailed of dimensions, please refer to the technical specifications.

Bipolar Transistors / Digital Transistors

20

Discrete Semiconductors

MEMO

21

Bipolar Transistors / Digital Transistors

Discrete Semiconductors

MEMO

Bipolar Transistors / Digital Transistors

22

2010

Bipolar Transistors / Digital Transistors

The content specified in this document is correct as of 1st October, 2009. No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.