High quality quantum well structures of InGaAsP (Î» = 1.55 Âµm)/InP were grown by lowpressure organometallic vapor phase epitaxy on 0.2Â° and 2Â° misoriented (001) InP substrates. Multiple-line 2 K photoluminescence emission was observed for the first time from thin quantum wells of InGaAsP grown on 0.2Â° misoriented substrates. The multiple-line emission is interpreted to result from half-monolayer well width variations within one welt with lateral sizes larger than the excitonic radius. Quantum wells grown on substrates with 2Â° misorientation showed generally wider single-line photoluminescence emission due to well width variations within one well with lateral sizes smaller than the excitonic radius. The studied well thicknesses ranged from â‰ˆ70 Ã… down to â‰ˆ4 Ã…, which showed emission as short as 905 nm (1.37 eV) corresponding to a spectral upshift of 514 meV. The very high quality of the quantum wells of InGaAsP is indicated by a 2 K photoluminescence linewidth of 8.8 meV for a â‰ˆ 6 Ã… well.

GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayerâ‰Š2.93 Ã…) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer...

We investigated the relation between structural properties and carrier recombination processes in InGaN/GaN multiple quantum well (MQW) structures with quantum well widths of 3 and 9 nm, grown by metal-organic chemical-vapor deposition on bulk GaN crystals. Quantum barriers of the samples are...

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in...

A new method of obtaining quantum-size GaAs[sub 1-x]Sb[sub x](xâ‰¤0.45) layers is proposed. The method consists in laser vaporization of solid metallic antimony near the substrate directly in the reactor. The antimony concentration is set by the antimony sputtering time with the arsine flux...

We have investigated the composition and optical properties of GaInAsN/GaAs single quantum wells grown using metal organic chemical vapor epitaxy at 500 Â°C. Using time-of-flight secondary ion mass spectrometry and photoluminescence spectroscopy, we have shown the presence of a 1â€“2 nm...