Abstract

Postoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at interfaces.Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealedinterfaces were performed using constant-capacitance deep level transient spectroscopy (CCDLTS) and double-CCDLTS. We show that the interface state density in as-oxidized samples consists of overlapping distributions of electron traps that have distinctly different capture cross sections. The dominant trap distributions, centered at with , and at with are passivated by NO annealing. The remaining interface states all have capture cross sections in the range .

Received 06 September 2007Accepted 24 November 2007Published online 05 February 2008

Acknowledgments:

We are grateful to W. Woods in the SFU School of Engineering Sciences for assistance with wire bonding. This work was supported by the National Sciences and Engineering Research Council of Canada, the Canadian Foundation for Innovation, the British Columbia Knowledge Development Fund, the U.S. Army Research Office, the U.S. Army TACOM, and the Defense Advanced Research Projects Agency.