Abstract:

An object is to provide a method for manufacturing a light-emitting device
with high definition, high light-emitting characteristics, and the long
lifetime by employing a method in which a desired evaporation pattern can
be formed and an excess evaporation of a material layer which is to be
the transfer layer is prevented and in which deterioration of the
material or the like is hard to occur in a transfer step. This is a
method for manufacturing a light-emitting device, in which irradiation
with first light is performed to pattern a material layer over a first
substrate which is an evaporation donor substrate and irradiation with
second light is performed to evaporate the material layer patterned onto
a second substrate which is a deposition target substrate.

Claims:

1. A method for manufacturing a light-emitting device, comprising the
steps of:forming a reflective layer having an opening portion over one
surface of a first substrate;forming a light absorption layer so as to be
in contact with the first substrate and the reflective layer;forming a
material layer so as to be in contact with the light absorption
layer;removing a first part of the material layer by performing
irradiation on the opposite surface of the first substrate with first
light wherein the first part of the material layer overlaps with the
opening portion of the reflective layer; andevaporating a second part of
the material layer onto a second substrate by performing irradiation on
the opposite surface of the first substrate with second light wherein the
second part of the material layer overlaps with the reflective layer.

2. A method for manufacturing a light-emitting device, according to claim
1,wherein the irradiation of the first light is performed in a range of a
general formula
(1):1/(A1).sup.1.5.ltoreq.B.sub.1.ltoreq.10.sup.6/(A1).sup.1.5
and B.sub.1.ltoreq.10.sup.-3 (1)where light intensity is A1
(W/cm2)and irradiation time is B1 (s), andwherein the
irradiation of the second light is performed in a range of a general
formula (2):1/(A2).sup.1.5.ltoreq.B.sub.2.ltoreq.10.sup.6/(A2).-
sup.1.5 and B2>10.sup.-3 (2)where light intensity is
A2(W/cm2) and irradiation time is B2 (s).

3. The method for manufacturing a light-emitting device, according to
claim 1, wherein the first light is a laser light and the second light is
a lamp light.

4. The method for manufacturing a light-emitting device, according to
claim 1, wherein the reflectance of the reflective layer is greater than
or equal to 85% with respect to light.

5. The method for manufacturing a light-emitting device, according to
claim 1, wherein the reflective layer contains any of aluminum, silver,
gold, platinum, copper, an alloy containing aluminum, and an alloy
containing silver.

6. The method for manufacturing a light-emitting device, according to
claim 1, wherein the reflectance of the light absorption layer is less
than or equal to 70% with respect to light.

8. The method for manufacturing a light-emitting device, according to
claim 1, wherein the material layer is formed from an organic compound.

9. The method for manufacturing a light-emitting device, according to
claim 1, wherein the material layer contains one or both of a
light-emitting material and a carrier-transporting material.

10. A method for manufacturing a light-emitting device, comprising the
steps of:forming a reflective layer having an opening portion over one
surface of a first substrate;forming a light absorption layer so as to be
in contact with the first substrate and the reflective layer;forming a
material layer so as to be in contact with the light absorption
layer;removing a first part of the material layer by performing
irradiation on the opposite surface of the first substrate with first
light wherein the first part of the material layer overlaps with the
opening portion of the reflective layer; andevaporating a second part of
the material layer onto a second substrate by heating the first substrate
wherein the second part of the material layer overlaps with the
reflective layer.

11. A method for manufacturing a light-emitting device, according to claim
10,wherein the irradiation of the first light is performed in a range of
a general formula
(1):1/(A1).sup.1.5.ltoreq.B.sub.1.ltoreq.10.sup.6/(A1).sup.1.5
and B.sub.1.ltoreq.10.sup.-3 (1)where light intensity is A1
(W/cm2)and irradiation time is B1 (s).

12. The method for manufacturing a light-emitting device, according to
claim 10, wherein the first light is a laser light.

13. The method for manufacturing a light-emitting device, according to
claim 10, wherein the reflectance of the reflective layer is greater than
or equal to 85% with respect to light.

14. The method for manufacturing a light-emitting device, according to
claim 10, wherein the reflective layer contains any of aluminum, silver,
gold, platinum, copper, an alloy containing aluminum, and an alloy
containing silver.

15. The method for manufacturing a light-emitting device, according to
claim 10, wherein the reflectance of the light absorption layer is less
than or equal to 70% with respect to light.

17. The method for manufacturing a light-emitting device, according to
claim 10, wherein the material layer is formed from an organic compound.

18. The method for manufacturing a light-emitting device, according to
claim 10, wherein the material layer contains one or both of a
light-emitting material and a carrier-transporting material.

19. A method for manufacturing a light-emitting device, comprising the
steps of:forming a metal film over one surface of a first
substrate;etching the metal film to form a reflective pattern;forming a
light absorption layer so as to be in contact with the first substrate
and the reflective layer;forming a material layer so as to be in contact
with the light absorption layer;removing a first part of the material
layer by performing irradiation on the opposite surface of the first
substrate with first light wherein the first part of the material layer
does not overlap with the reflective pattern; andevaporating a second
part of the material layer onto a second substrate by performing
irradiation on the opposite surface of the first substrate with second
light wherein the second part of the material layer overlaps with the
reflective pattern.

20. A method for manufacturing a light-emitting device, comprising the
steps of:forming a metal film over one surface of a first
substrate;etching the metal film to form a reflective pattern;forming a
light absorption layer so as to be in contact with the first substrate
and the reflective layer;forming a material layer so as to be in contact
with the light absorption layer;removing a first part of the material
layer by performing irradiation on the opposite surface of the first
substrate with first light wherein the first part of the material layer
does not overlap with the reflective pattern; andevaporating a second
part of the material layer onto a second substrate by heating the first
substrate wherein the second part of the material layer overlaps with the
reflective pattern.

Description:

BACKGROUND OF THE INVENTION

[0001]1. Field of the Invention

[0002]The present invention relates to a method for manufacturing a
light-emitting device using an evaporation method.

[0003]2. Description of the Related Art

[0004]Light emitting elements, which use organic compounds as a light
emitting member and are characterized by the thinness, lightweight, fast
response, and direct current low voltage driving, are expected to be
applied to next-generation flat panel displays. Among display devices,
ones having light emitting elements arranged in matrix are considered to
be particularly superior to conventional liquid crystal display devices
for their wide viewing angle and excellent visibility.

[0005]It is said that, as for a light-emitting mechanism of a
light-emitting element, an EL layer is sandwiched between a pair of
electrodes and voltage is applied to the EL layer, and thus electrons
injected from a cathode and holes injected from an anode are recombined
in an emission center of the EL layer to form molecular excitons, and the
molecular excitons release energy when returning to a ground state; thus,
light is emitted. A singlet excited state and a triplet excited state are
known as excited states, and it is thought that light emission can be
obtained through either of the excitation states.

[0006]An EL layer included in a light-emitting element includes at least a
light-emitting layer. In addition, the EL layer can have a stacked-layer
structure including a hole-injecting layer, a hole-transporting layer, an
electron-transporting layer, an electron-injecting layer, and/or the
like, in addition to the light-emitting layer.

[0007]In addition, an EL material for forming an EL layer is roughly
classified into a low molecular (monomer) material and a high molecular
(polymer) material. In general, a film of a low molecular material is
often formed by an evaporation method and a film of a high molecular
material is often formed by an inkjet method or the like.

[0008]An evaporation apparatus which is used in an evaporation method has
a substrate holder to which a substrate is mounted; a crucible (or an
evaporation boat) containing an EL material, that is, an evaporation
material; a heater for heating the EL material in the crucible; and a
shutter for preventing the EL material from being scattered during
sublimation. The EL material which is heated by the heater is sublimated
and deposited onto the substrate.

[0009]Note that in order to achieve uniform deposition, actually, a
deposition target substrate needs to be rotated and the substrate and the
crucible need to be separated from each other by at least a certain
distance. In addition, when films of different colors are separately
formed using a plurality of EL materials through a mask such as a metal
mask, it is necessary that the distance between pixels be designed to be
large and that the width of a partition (bank) formed of an insulator
between pixels be large. Such needs are major problems in advancing high
definition (increasing the number of pixels) and miniaturization of pixel
pitches along with downsize of a light-emitting device including a
light-emitting element.

[0010]Therefore, as for flat panel displays, it has been necessary to
achieve high productivity and cost reduction as well as to solve those
problems in order to achieve higher definition and higher reliability.

[0011]Thus, a method for forming an EL layer of a light emitting element
through laser thermal transfer has been proposed (see Reference 1:
Japanese Published Patent Application No. 2006-309995). Reference 1
discloses a transfer substrate which has a photothermal conversion layer
including a low-reflective layer and a high-reflective layer and also a
transfer layer over a supporting substrate. Irradiation of such a
transfer substrate with a laser light allows the transfer layer to be
transferred to an element-forming substrate.

SUMMARY OF THE INVENTION

[0012]However, when the transfer substrate in which the transfer layer is
formed over the high-reflective layer and the low-reflective layer is
irradiated with a to transfer the transfer layer onto the deposition
target substrate directly as described in Reference 1, heat generated in
the low-reflective layer is conducted to the high-reflective layer if the
irradiation time with a laser light is long, whereby not only part of the
transfer layer which is over the low-reflective layer but also part of
the transfer layer which is over the high-reflective layer is highly
likely to be transferred. In contrast, when irradiation with a laser
light with high output power is performed instantaneously in order to
shorten irradiation time with the laser beam, although only the part of
the transfer layer which is over the low-reflective layer is transferred
and a desired evaporation pattern can be formed, the transfer layer has a
high temperature at the moment that irradiation with the laser light is
performed, whereby decomposition or deterioration of a material included
in the transfer layer might occur. Further, after the transfer, the
resulting film formed in this manner is likely to be very uneven and poor
in its film quality.

[0013]Therefore, an object of one embodiment of the present invention is
to provide a method for manufacturing a light-emitting device with high
definition, high light-emitting characteristics, and the long lifetime by
applying a method in which a desired evaporation pattern can be formed
and an excess evaporation of a material layer which is to be the transfer
layer is prevented and in which deterioration of the material or the like
is hard to occur in a transfer step.

[0014]One embodiment of the present invention is a method for
manufacturing a light-emitting device, in which irradiation with first
light is performed to pattern a material layer over a first substrate
which is an evaporation donor substrate and irradiation with second light
is performed to evaporate the material layer, which has been patterned,
onto a second substrate which is a deposition target substrate.

[0015]A structure of one embodiment of the present invention is a method
for manufacturing a light-emitting device in which a reflective layer
which has an opening portion is formed over one surface of a first
substrate; a light absorption layer is formed so as to be in contact with
the first substrate and the reflective layer; a material layer is formed
so as to be in contact with the light absorption layer; and the opposite
surface of the first substrate is irradiated with the first light in a
range of the following general formula (1), where light intensity is
A1(W/cm2) and irradiation time is B1 (s).

1/(A1)1.5≦B1≦106/(A1)1.5 and
B1≦10-3 (1)

[0016]With the irradiation with the first light, part of the material
layer which overlaps with the opening portion of the reflective layer is
removed; the one surface of the first substrate and a deposition target
surface of the second substrate are disposed so as to face each other and
be brought close to each other; and the opposite surface of the first
substrate is irradiated with the second light in a range of the following
general formula (2), where light intensity is A2(W/cm2) and
irradiation time is B2 (s).

1/(A2)1.5≦B2≦106/(A2)1.5 and
B2>10-3 (2)

[0017]With the irradiation with the second light, part of the material
layer which overlaps with the reflective layer is evaporated onto the
deposition target surface of the second substrate.

[0018]Further, another structure of one embodiment of the present
invention is a method for manufacturing a light-emitting device, in which
a reflective layer with an opening portion is formed over one surface of
a first substrate; a light absorption layer is formed so as to be in
contact with the first substrate and the reflective layer; a material
layer is formed so as to be in contact with the light absorption layer;
and the opposite surface of the first substrate is irradiated with first
light in a range of the following general formula (1), where light
intensity is A1(W/cm2) and irradiation time is B1 (s).

1/(A1)1.5≦B1≦106/(A1)1.5 and
B1≦10-3 (1)

[0019]With the irradiation with the first light, part of the material
layer which overlaps with the opening portion of the reflective layer is
removed; the one surface of the first substrate and a deposition target
surface of a second substrate are disposed so as to face each other and
be brought close to each other; the first substrate is heated; and part
of the material layer which overlaps with the reflective layer is
evaporated onto the deposition target substrate of the second substrate.

[0020]In each of the aforementioned structures, the first light is a laser
light.

[0021]In each of the aforementioned structures, the reflective layer has a
reflectance of greater than or equal to 85% with respect to light and
contains any of aluminum, silver, gold, platinum, copper, an alloy
containing aluminum, and an alloy containing silver.

[0022]In each of the aforementioned structures, the light absorption layer
has a reflectance of less than or equal to 70% with respect to light and
contains any of tantalum nitride, titanium nitride, chromium nitride,
manganese nitride, titanium, and carbon.

[0023]In each of the aforementioned structures, the material layer is
formed from an organic compound and contains one or both of a
light-emitting material and a carrier-transporting material.

[0024]The present invention also covers an electronic device including a
light-emitting device, as well as a light-emitting device including a
light-emitting element. Accordingly, a light-emitting device in this
specification refers to an image display device, a light-emitting device,
and a light source (including an illumination device). In addition,
light-emitting devices include all of the following modules: modules
provided with a connector, for example, a flexible printed circuit (FPC),
a tape automated bonding (TAB) tape, or a tape carrier package (TCP);
modules provided with a printed wiring board at the end of a TAB tape or
a TCP; and modules where an integrated circuit (IC) is directly mounted
on a light-emitting element by a chip-on-glass (COG) method.

[0025]Light irradiation is performed twice in the method for manufacturing
a light-emitting device related to one embodiment of the present
invention, which enables pattern formation of the material layer over the
evaporation donor substrate and deposition of the material layer onto the
deposition target substrate. Specifically, the material layer formed over
the evaporation donor substrate is patterned by the first light
irradiation and the patterned material layer is evaporated onto the
deposition target substrate by the second light irradiation, whereby the
material layer can be evaporated with high accuracy. Therefore, the
light-emitting device with high definition, high light-emitting
characteristics, and the long lifetime can be manufactured.

[0026]Note that, since a light source which emits light having high
intensity instantaneously is used in first light irradiation, irradiation
time can be shortened and can prevent deformation of a pattern region due
to heat conduction. Further, since the material layer over the
evaporation donor substrate is patterned in the first light irradiation,
a light source which emits light with lower intensity than that in the
first light irradiation can be used in the second light irradiation
regardless of heat conduction. Accordingly, deterioration of the material
layer evaporated onto the deposition target substrate due to light
irradiation can be prevented.

[0027]Note that, when lamp light is used as a light source in the second
light irradiation, since a film can be deposited on a large area at one
time, productivity of a light-emitting device can be improved. Further,
in the present invention, by heating the evaporation donor substrate
indirectly or directly instead of the second light irradiation, the
evaporation material over the evaporation donor substrate may be
sublimated and deposited onto the deposition target substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

[0028]FIGS. 1A to 1D are views illustrating a method for manufacturing an
evaporation donor substrate according to one embodiment of the present
invention.

[0029]FIGS. 2A to 2C are views illustrating a method for manufacturing an
evaporation donor substrate according to one embodiment of the present
invention.

[0030]FIGS. 3A to 3C are views illustrating an evaporation donor substrate
and a deposition method according to one embodiment of the present
invention.

[0031]FIG. 4 is a view illustrating an apparatus whose light source is a
laser beam.

[0032]FIGS. 5A and 5B are views illustrating an apparatus whose light
source is a lamp light.

[0033]FIGS. 6A and 6B are views illustrating an evaporation donor
substrate for full-color display and a pixel arrangement in an EL layer.

[0034]FIGS. 7A and 7B are views illustrating an evaporation donor
substrate for full-color display and a pixel arrangement in an EL layer.

[0035]FIGS. 8A and 8B are views illustrating a light-emitting element.

[0039]FIGS. 12A to 12E are views each illustrating an electric device.

[0040]FIGS. 13A to 13C are views illustrating an electric device.

[0041]FIG. 14 is a graph showing a region where conditions for first light
and second light are satisfied.

DETAILED DESCRIPTION OF THE INVENTION

[0042]Hereinafter, the embodiments according to the present invention will
be described in detail with reference to the drawings. However, the
present invention is not limited to explanation to be given below, and it
is to be easily understood that modes and details thereof can be
variously modified without departing from the purpose and the scope of
the present invention. Thus, the present invention is not interpreted
while limiting to the following description of the embodiments.

Embodiment 1

[0043]Embodiment 1 describes a deposition method in which an evaporation
donor substrate is used. Note that Embodiment 1 describes the case where
an evaporation material is patterned over the evaporation donor substrate
and an EL layer of a light-emitting element is formed with use of the
patterned evaporation material.

[0044]The evaporation donor substrate used in this embodiment is described
with reference to FIGS. 1A to 1D. As illustrated in FIG. 1A, a reflective
layer 103 including an opening portion 102 is formed over a first
substrate 101 which is a supporting substrate and a light absorption
layer 104 is formed over the first substrate 101 and the reflective layer
103. Note that part of the light absorption layer 104 is formed so as to
fill the opening portion 102.

[0045]Further, a material layer 105 is formed over the light absorption
layer 104. In FIG. 1A, each of the reflective layer 103 including the
opening portion 102, the light absorption layer 104, and the material
layer 105 is formed over the entire surface of the first substrate 101.

[0046]Note that, when the first substrate 101 is irradiated with light,
since the first substrate 101 is needed to transmit the light, the first
substrate 101 is preferably a substrate having high transmittance. It is
also preferable that the first substrate 101 be formed of a material
having low thermal conductivity. This is because the first substrate 101
having low thermal conductivity enables heat obtained from the
irradiation light to be conducted to the material layer efficiently. As
the first substrate 101, for example, a glass substrate, a quartz
substrate, a plastic substrate containing an inorganic material, or the
like can be used.

[0047]Further, when irradiation with first light 107 illustrated in FIG.
1B is performed, the reflective layer 103 allows part of the light
absorption layer 104 to be irradiated with light selectively and reflects
the irradiation light in other parts. Therefore, the reflective layer 103
is preferably formed from a material having high reflectance with respect
to the first light 107. Specifically, the reflective layer 103 preferably
has a reflectance of greater than or equal to 85%, more preferably, a
reflectance of greater than or equal to 90% with respect to the
irradiation light.

[0048]Further, as a material which can be used for the reflective layer
103, for example, aluminum, silver, gold, platinum, copper, an alloy
containing aluminum (for example, an aluminum-titanium alloy and an
aluminum-neodymium alloy), an alloy containing silver (silver-neodymium
alloy), indium oxide-tin oxide, or the like can be used.

[0049]Note that the reflective layer 103 can be formed by any of various
kinds of methods. For example, a metal film can be formed for use as the
reflective layer 103 by a sputtering method, an electron beam evaporation
method, a vacuum evaporation method, or the like. It is preferable that
the thickness of the reflective layer 103 be greater than or equal to 100
nm although it depends on a material. With a thickness of greater than or
equal to 100 nm, transmission of the irradiation light through the
reflective layer can be suppressed.

[0050]A variety of methods can be used for formation of the opening
portion 102 described in this embodiment, and dry etching is preferably
used. With use of dry etching, the opening portion 102 has a sharper
sidewall. A minute material layer pattern can be formed by using this
reflective pattern.

[0051]The light absorption layer 104 absorbs light which is used during
evaporation. Therefore, it is preferable that the light absorption layer
104 be formed from a material which has low reflectance and high
absorptance with respect to the irradiation light. Specifically, it is
preferable that the light absorption layer 104 have a reflectance of less
than or equal to 70% with respect to the irradiation light.

[0052]Further, as a material which can be used for the light absorption
layer 104, for example, a metal nitride, such as titanium nitride,
tantalum nitride, molybdenum nitride, and tungsten nitride, molybdenum,
titanium, tungsten, or the like is preferably used. Note that the light
absorption layer 104 is not limited to a single layer and may include a
plurality of layers.

[0053]Since a kind of a material which is suitable for the light
absorption layer 104 varies depending on the wavelength of the
irradiation light, the material of the light absorption layer 104 needs
to be selected as appropriate.

[0054]Further, the light absorption layer 104 can be formed by any of a
variety of methods. For example, the light absorption layer 104 can be
formed by a sputtering method, an electron beam evaporation method, a
vacuum evaporation method, or the like.

[0055]It is preferable that the light absorption layer 104 have a
thickness with which the irradiation light is not transmitted (the
thickness of greater than or equal to 100 nm and less than or equal to 2
μm is preferable) although it depends on a material. In particular,
with a thickness of greater than or equal to 100 nm and less than or
equal to 600 nm, the light absorption layer 104 can efficiently absorb
the irradiation light to generate heat. In addition, the light absorption
layer 104 having a thickness of greater than or equal to 100 nm and less
than or equal to 600 nm allows highly accurate deposition onto a
deposition target substrate.

[0056]The light absorption layer 104 may partially transmit the
irradiation light as long as the evaporation material contained in the
material layer 105 can be heated to the sublimation temperature. Note
that when the light absorption layer 104 partially transmits the
irradiation light, it is preferable that a material which is not
decomposed by light be used as the evaporation material contained in the
material layer 105.

[0057]In addition, the greater the difference in reflectance between the
reflective layer 103 and the light absorption layer 104 is, the more
preferable it is. Specifically, the difference in reflectance with
respect to the wavelength of the irradiation light is preferably greater
than or equal to 25%, more preferably, greater than or equal to 30%.

[0058]The material layer 105 includes the evaporation material which is to
be evaporated onto the deposition target substrate. Then, by irradiation
of the evaporation donor substrate with light, the material layer 105 is
heated, so that the evaporation material is sublimated and evaporated
onto the deposition target substrate.

[0059]Note that any of a variety of materials can be used as the
evaporation material contained in the material layer 105 regardless of
whether they are organic compounds or inorganic compounds, as long as the
material can be evaporated. In the case of forming an EL layer of a
light-emitting element as described in this embodiment, a material which
can be evaporated to form an EL layer is used. For example, an organic
compound, such as a light-emitting material, a carrier-transporting
material or a carrier injecting material that forms an EL layer, or an
inorganic compound which is used for an electrode of a light-emitting
element, such as metal oxide, metal nitride, metal halide, or an
elementary substance of metal, as well as a carrier-transporting layer or
a carrier-injecting layer included in an EL layer, can be used. Details
of the materials which can be evaporated to form an EL layer is given not
here but in Embodiment 5; therefore, Embodiment 5 is referred to for
details.

[0060]The material layer 105 may contain a plurality of materials. The
material layer 105 may be a single layer or a stack of a plurality of
layers. Accordingly, by stacking a plurality of layers each containing an
evaporation material, co-evaporation is possible. In the case where the
material layer 105 has a stacked-layer structure, it is preferable that
the layers be stacked so that an evaporation material having a low
sublimation temperature (or a material which can be evaporated at a lower
temperature) be contained in a layer near the first substrate. Such a
structure allows efficient evaporation with used of the material layer
105 which has a stacked-layer structure.

[0061]The material layer 105 is formed by any of a variety of methods. For
example, a wet method, such as a spin coating method, a spray coating
method, an ink-jet method, a dip coating method, a casting method, a die
coating method, a roll coating method, a blade coating method, a bar
coating method, a gravure coating method, or a printing method, can be
used. Alternatively, a dry method, such as a vacuum evaporation method or
a sputtering method, can be used.

[0062]In order to form the material layer 105 by a wet method, a
predetermined evaporation material may be dissolved or dispersed into a
solvent, and a solution or a dispersion liquid may be adjusted. There is
no particular limitation on the solution as long as it can dissolve or
disperse an evaporation material and it does not react with the
evaporation material. Examples of the solvent are as follows:
halogen-based solvents, such as chloroform, tetrachloromethane,
dichloromethane, 1,2-dichloroethane, and chlorobenzene; ketone-based
solvents such as acetone, methyl ethyl ketone, diethyl ketone, n-propyl
methyl ketone, and cyclohexanone; aromatic-based solvents such as
benzene, toluene, and xylene; ester-based solvents such as ethyl acetate,
n-propyl acetate, n-butyl acetate, ethyl propionate,
γ-butyrolactone, and diethyl carbonate; ether-based solvents such
as tetrahydrofuran and dioxane; amide-based solvents such as
dimethylformamide and dimethylacetamide; dimethyl sulfoxide; hexane;
water; and the like. A mixture of plural kinds of these solvents may also
be used. By using a wet method, it is possible to increase use efficiency
of the material, which leads to a reduction in a manufacturing cost.

[0063]Then, as illustrated in FIG. 1B, a second substrate 106 is disposed
so as to face a surface of the first substrate 101 over which the
reflective layer 103, the light absorption layer 104, and the material
layer 105 are formed. Note that the second substrate 106 is a substrate
for collecting the material by intentional evaporation of part of the
material layer 105 which is sublimated by light irradiation, in the case
where the material layer 105 formed over the first substrate 101 is
processed to have a desired shape. As illustrated in FIG. 1B, with
provision of the second substrate 106, the part of the material layer 105
can be collected, whereby the material collected can be reused when a
material layer of another evaporation donor substrate is formed.

[0064]Further, it is preferable that the first substrate 101 and the
second substrate 106 face each other and that a distance between the
first substrate 101 and the second substrate 106 be shortened in order to
improve collection efficiency of the material. In particular, a surface
of the material layer 105 over the first substrate 101 and a surface of
the second substrate 106 are brought close to each other so that a
distance d1 between the surface of the material substrate 105 and
the surface of the second substrate 106 is set to be less than or equal
to 2 mm, preferably less than or equal to 0.05 mm. However, it is
preferable that the surface of the material layer 105 and the second
substrate 106 be not in contact with each other.

[0065]As illustrate in FIG. 1B, when the opposite surface of the first
substrate 101 is irradiated with the first light 107, the light with
which the reflective layer 103 over the first substrate 101 is irradiated
is reflected and the light with which the opening portion 102 is
irradiated is absorbed by the light absorption layer 104. Further, the
light absorption layer 104 provides heat obtained by the absorbed light
to the evaporation material of the material layer 105 so that the
evaporation material is sublimated and an evaporation material 105a,
which is part of the material layer 105, is evaporated onto the second
substrate 106 (see FIG. 1c). Note that the evaporation material 105a
evaporated onto the second substrate 106 can be collected to be reused.

[0066]In this manner, the evaporation donor substrate in which a material
layer 105b is located so as to overlap with the reflective layer 103 over
the first substrate 101 can be formed (see FIG. 1D).

[0067]The first irradiation light 107 satisfies a general formula (1)
described below, where light intensity is A1 (W/cm2) and an
irradiation time is B1 (s). Note that the general formula (1)
described below is a range shown in a region a (1401) in FIG. 14.

1/(A1)1.5≦B1≦106/(A1)1.5 and
B1≦10-3 (1)

[0068]Note that with the irradiation with the first light in the range of
the general formula (1), the material layer 105 in a position which
overlaps with the opening portion 102, can be sublimated. Note that with
the irradiation with the light in the range of the general formula (1),
the light absorption layer 104 is prevented from being damaged due to
excess energy. Note that the irradiation tome B1 (s) of the first
light 107 is preferably set to be less than or equal to 1 ms, more
preferably less than or equal to 0.1 ms in order to prevent the heat
generated in the light absorption layer 104 from being conducted in a
surface direction.

[0069]As the first light 107 used for irradiation, a laser light is
preferably used as a light source. As a laser oscillator, a laser
oscillator capable of emitting ultraviolet light, visible light, or
infrared light can be used. For example, a laser light with a wavelength
of 488 nm, 514 nm, 527 nm, 532 nm, or 561 nm can be used. Use of the
laser light as a light source allows efficient thermal conversion in the
light absorption layer 104 even if the irradiation time is short.
Therefore, the precision of the shape of the material layer 105b formed
by the partial sublimation of the evaporation material can be improved.

[0070]Further, as a laser beam, a laser light emitted from one or more of
the following can be used: a gas laser such as an Ar laser, a Kr laser,
or an excimer laser; a solid-state laser such as a laser using, as a
medium, a single crystalline YAG, YVO4, forsterite
(Mg2SiO4), YAlO3, or GdVO4, or a polycrystalline
(ceramic) YAG, Y2O3, YVO4, YAlO3, or GdVO4,
which is doped with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta, a
glass laser, a ruby laser, an alexandrite laser, a Ti:sapphire laser, or
a fiber laser. Alternatively, a second harmonic or a third harmonic
oscillated from the aforementioned solid-state laser can be used. Note
that when a solid-state laser whose laser medium is a solid is used,
there are advantages in that maintenance-free conditions can be
maintained for a long time, and output is comparatively stable.

[0071]Further, a pulsed laser, continuous-wave (CW) laser, or the like can
be used for the aforementioned laser. Note that, in the case of a pulsed
laser, for example, a laser light with a frequency of not only several Hz
to several hundreds kHz but also a frequency greater than or equal to 1
MHz can be used. Further, a laser spot preferably has a linear shape or a
rectangular shape. In particular, in the case of a pulsed laser, the
length of the major axis of the laser spot can be increased to
approximately 1 m, whereby processing time is shortened to improve
productivity.

[0072]In the present invention, the material layer 105 is heated not with
radiation heat from the irradiation light but with heat conducted by the
light absorption layer 104 which absorbs the irradiation light.
Therefore, it is preferable to set light irradiation time to be short so
that heat is not conducted from a part of the light absorption layer 104
which is irradiated with light to a part of the light absorption layer
104 which is not irradiated with light in a surface direction and so that
an area of the material layer 105 which is heated is not enlarged.

[0073]Further, pattern formation of the material layer 105 by light
irradiation is preferably performed under a reduced-pressure atmosphere.
Accordingly, it is preferable that a deposition chamber have a pressure
of less than or equal to 5×10-3 Pa, more preferably greater
than or equal to 10-6 Pa and less than or equal to 10-4 Pa.

[0074]Next, a deposition method in which the first substrate 101 including
the material layer 105b illustrated in FIG. 1D is used as an evaporation
donor substrate is described with reference to FIGS. 2A to 2C. Note that
a method for forming an EL layer of a light-emitting element with use of
the evaporation donor substrate is described here.

[0075]In FIG. 2A, the first substrate 101 is disposed so that the surface
of the first substrate 101 over which the reflective layer 103, the light
absorption layer 104, and the material layer 105b are formed faces a
deposition target surface of a third substrate 201 which is a deposition
target substrate.

[0076]The third substrate 201 is the deposition target substrate over
which a desired layer is deposited through an evaporation process using
an evaporation donor substrate. Note that since the case where an EL
layer of a light-emitting element is formed using an evaporation donor
substrate is described here, a first electrode 202 which is one of
electrodes of the light-emitting element is formed over the third
substrate 201. Then, the first substrate 101 and the third substrate 201
are disposed so as to face each other in proximity; specifically, they
are disposed close to each other so that a distance d2 between a
surface of the material layer 105b over the first substrate 101 and a
surface of the third substrate 201 (in particular, a surface of the first
electrode 202) is greater than or equal to 0 mm and less than or equal to
10 μm, preferably greater than or equal to 0 mm and less than or equal
to 5 μm, or more preferably greater than or equal to 0 mm and less
than or equal to 3 μm.

[0077]Note that the distance d2 is defined as a distance between the
outermost surface of the first substrate 101 and the outermost surface of
the third substrate 201. Therefore, when the first electrode 202 is
formed over the third substrate 201 and insulator 203 is formed over the
third substrate 201 so as to cover and an edge portion of the first
electrode 202 as illustrated in FIG. 3A, the distance d2 is defined
as a distance between the surface of the material layer 105b over the
first substrate 101 and a surface of the insulator 203 formed over the
third substrate 201. Note that, when the surface of the material layer
105b over the first substrate 101 and an outermost surface of the layer
formed over the third substrate 201 have unevenness, the distance d2
is defined as the shortest distance between the surface of the material
layer 105b over the first substrate 101 and the outermost surface of the
layer formed over the third substrate 201.

[0078]Then, as illustrated in FIG. 2B, a rear surface of the first
substrate 101 (the surface over which the reflective layer 103, the light
absorption layer 104, and the material layer 105b are not formed) is
irradiated with second light 204. With irradiation with the second light
204, heat generated in the light absorption layer 104 is conducted in a
surface direction of the light absorption layer 104 and the material
layer 105b in a position which overlaps with the reflective layer 103 is
heated to evaporate the evaporation material of the material layer 105b
onto the first electrode 202 formed over the third substrate 201, whereby
an EL layer 205 of a light-emitting element can be formed. Note that the
same applies to a structure illustrated in FIGS. 3A to 3C. An EL layer
206 of a light-emitting element is formed over the first electrode 202 of
the third substrate 201 as illustrated in FIG. 3B.

[0079]The second light 204 used for irradiation satisfies a general
formula (2) described below, where light intensity is A2
(W/cm2) and irradiation time is B2 (s). Note that the general
formula (2) described below is in a range shown in a region b (1402) in
FIG. 14.

1/(A2)1.5≦B2≦106/(A2)1.5 and
B2>10-3 (2)

[0080]Note that, irradiation with the second light in the range of the
general formula (2) allows the heat generated in the light absorption
layer 104 to be conducted in a surface direction whereby the material
layer 105b which in a position which overlaps with the reflective layer
103 can be evaporated onto the third substrate. Note that the irradiation
time B2 (s) of the second light 204 is preferably set to be greater
than or equal to 1 ms, more preferably greater than or equal to 10 ms.

[0081]As for the second light 204, lamp light which enables irradiation on
a large area by one-time irradiation is preferably used as a light
source. For example, when a halogen lamp is used, the whole first
substrate 101 can be heated to a temperature of greater than or equal to
500° C. by irradiation for approximately 7s, whereby the
evaporation material of the material layer 105b can be sublimated.

[0082]In the case where a lamp light is used as the light source for the
second light 204, a discharge lamp, such as a flash lamp (a xenon flash
lamp, a krypton flash lamp, or the like), a xenon lamp, or a metal halide
lamp, or an exothermic lamp, such as a halogen lamp or a tungsten lamp,
can be used. The flash lamp enables irradiation on a large area for a
short time (0.1 millisecond to 10 milliseconds). In addition, the amount
of light irradiation of the third substrate 201 can be controlled by
changing a time interval of light emission of the flash lamp. In
addition, the running cost can be suppressed because of the long lifetime
and low power consumption at the time of waiting for light emission of
the flash lamp.

[0083]It is preferable that evaporation by light irradiation be performed
in a reduced-pressure atmosphere. Accordingly, it is preferable that the
deposition chamber have a pressure of less than or equal to
5×10-3 Pa, more preferably greater than or equal to 10-6
Pa and less than or equal to 10-4 Pa.

[0084]Note that the case where the light absorption layer 104, which
absorbs the light from the light source, provides heat to the material
layer 105 is described here; however, this embodiment is not limited
thereto and radiation heat due to the irradiation light from a light
source may be used. Accordingly, the evaporation material of the material
layer 105b may be sublimated not only by light irradiation but also by
direct heating with use of a heat source, such as a heater.

[0085]Further, as illustrated in FIG. 2c, the distance d2 between the
first substrate 101 and the third substrate 201 may be set to be 0 mm.
That is, the material layer 105b over the first substrate 101 and the
surface of the first electrode 202 formed over the third substrate 201
are disposed so as to face each other and be in contact with each other.
In this manner, reduction of the distance d2 can prevent
misplacement of a disposition region, and thus can prevent deformation of
a deposited pattern of the disposition target surface. Accordingly, the
EL layer 207 of a light-emitting element can be formed over the third
substrate 201 with high accuracy. Note that, in the case of FIGS. 3A to
3C, when the distance d2 between the first substrate 101 and the
third substrate 201 is set to 0 mm, the surface of the material layer
105b over the first substrate 101 and the surface of the insulator 203
formed over the third substrate 201 are in contact with each other,
whereby deformation of the disposition pattern over the deposition target
surface due to misplacement of the disposition region can be prevented
more effectively. Therefore, an EL layer 208 of the light-emitting
element can be formed with high accuracy so as to be in contact with the
first electrode 202 over the third substrate 201 as illustrated in FIG.
3C.

[0086]Note that, in this embodiment, the case where the third substrate
201 is located below the first substrate 101 is described; however, the
present invention is not limited thereto. The orientation of the
substrates can be appropriately determined.

[0087]In the aforementioned deposition method with use of the evaporation
donor substrate, by irradiation with the laser light used as the first
light 107 in the pattern formation of the material layer over the
evaporation donor substrate, efficient thermal conversion in the light
absorption layer is realized with a brief light irradiation. Therefore,
the precision of the shape of the material layer 105b formed by the
partial sublimation of the evaporation material can be improved.

[0088]In addition, when the patterned material layer is evaporated onto
the deposition target substrate, by light irradiation using light whose
light source is lamp light or the like as the second light 204, a large
area can be irradiated at one time. Therefore, the heat conducted in a
surface direction in the light absorption layer 104 improves the
deposition efficiency in the evaporation of the evaporation material onto
the deposition target substrate.

[0089]Further, after the evaporation material is irradiated with the first
light and sublimated partly so that the material layer over the
evaporation donor substrate is processed to have a desired shape, the
material layer is evaporated onto the deposition target substrate.
Therefore, the precision of the shape of the layer evaporated onto the
deposition target substrate can be improved. Further, the evaporation
material partly sublimated is evaporated onto another substrate, whereby
the evaporation material partly sublimated can be collected and reused
and thus a manufacturing cost can be reduced.

Embodiment 2

[0090]Embodiment 2 describes an apparatus which is used when an
evaporation donor substrate is irradiated with a laser light as a light
source of first light, in a deposition method with use of the evaporation
donor substrate described in Embodiment 1.

[0091]FIG. 4 is a perspective view illustrating an example of an apparatus
using a laser light. The laser light is emitted from a laser oscillator
403 (a YAG laser apparatus, an excimer laser apparatus, or the like) and
transmitted through a first optical system 404 for changing a laser light
shape into a rectangular shape, a second optical system 405 for shaping
the laser beam, and a third optical system 406 for collimating the laser
beam. Then, an optical path is bent in a direction perpendicular to a
first substrate 401, which is an evaporation donor substrate over a first
substrate stage 409, by using a reflecting mirror 407. After that, the
first substrate 401 is irradiated with the laser beam.

[0092]Note that a structure of the evaporation donor substrate described
in Embodiment 2 is similar to that described in Embodiment 1. That is,
the first substrate 401 has the structure in which a reflective layer, a
light absorption layer, and a material layer are formed. Note that an
opening portion of the reflective layer is formed in a region 413
illustrated with a dotted line in FIG. 4.

[0093]Further, the shape of a laser spot on the first substrate 401 is
preferably set to a rectangular shape or a linear shape. Furthermore, in
the case of using a large-sized substrate, a long side of the laser spot
is preferably set to be in the range from 20 cm to 100 cm in order to
shorten processing time. Further, a plurality of laser oscillators and a
plurality of optical systems, each of which is illustrated in FIG. 4, may
be provided so that a substrate with a large area is processed in a short
time. Specifically, a laser beam may be emitted from each of the
plurality of laser oscillators and the area to be processed of the one
substrate is shared by the plurality of laser beams.

[0094]Note that FIG. 4 illustrates one example, and there is no particular
limitation on a positional relationship of each optical system or
electrooptical element placed along the optical path of the laser light.
For example, the reflective mirror 407 is not used necessarily if the
laser oscillator 403 is disposed above the first substrate 401 so that
the laser light is emitted from the laser oscillator 403 in a direction
perpendicular to a main plane of the first substrate 401. Further, each
optical system may employ a condenser lens, a beam expander, a
homogenizer, a polarizer, or the like, and these may be combined.
Further, as each optical system, slits may be combined.

[0095]By two-dimensionally scanning the irradiation region of the laser
beam on a surface to be irradiated as appropriate, irradiation is
performed on a large area of a substrate. In order to perform scanning,
the irradiation region of the laser beam and the substrate are moved
relative to each other. Here, a moving means (not illustrated) for moving
the first substrate stage 409, which keeps the first substrate 401 that
is an evaporation donor substrate, in a direction perpendicular to the
long side of the laser spot is controlled by a control device 416 to
perform scanning. Note that the control device 416 is preferably
interlocked so as to also control the laser oscillator 403. Moreover, the
control device 416 is preferably interlocked with a position alignment
mechanism 408 which has an image pickup device for recognizing a position
marker.

[0096]The first substrate 401 and the second substrate 400 are brought
closer to each other to face each other so that a distance d between the
first substrate 401 and the second substrate 400 is set to be less than
or equal to 2 mm, preferably less than or equal to 0.05 mm. Note that a
surface of a material layer 412 and a surface of the second substrate 400
are preferably not in contact with each other.

[0097]When the material layer 412 is patterned with use of the apparatus
illustrated in FIG. 4, at least the first substrate 401 and the second
substrate 400 are disposed in a vacuum chamber. All of the components
illustrated in FIG. 4 may be placed in the vacuum chamber.

[0098]Although FIG. 4 illustrates an example of the apparatus employing a
so-called face-up system in which a deposition target surface of the
second substrate 400 faces upward, a deposition apparatus employing a
face-down system may be used. In addition, an apparatus employing a
so-called vertical placement may also be employed in which a main plane
of the second substrate 400 is perpendicular to a horizontal plane.

[0099]With use of such an apparatus, the material layer of the evaporation
donor substrate can be patterned. Further, since the evaporation material
evaporated onto the second substrate can be collected to be reused when
pattern formation is performed, a manufacturing cost can be reduced.

[0100]Note that the structure described in Embodiment 2 can be combined
with the structure in Embodiment 1 as appropriate.

Embodiment 3

[0101]Embodiment 3 describes an apparatus which is used when an
evaporation donor substrate including a patterned material layer is
irradiated with a lamp light used as a light source of second light in a
deposition method employing the evaporation donor substrate described in
Embodiment 1.

[0102]In FIG. 5A, a deposition chamber 501, which is a vacuum chamber, is
interlocked with another processing chamber by a gate valve 502 and
further provided with an exhaust mechanism 503. In addition, the
deposition chamber 501 includes at least a substrate stage 504 for
keeping a first substrate 511 (including a material layer 513) which is
an evaporation donor substrate, a substrate supporting mechanism 505 for
keeping a third substrate 512 which is a deposition target substrate, and
a light source 510.

[0103]Note that a material layer of the first substrate 511 kept on the
substrate stage 504 is patterned by performing the treatment described in
Embodiment 1 or Embodiment 2 in another processing chamber. That is,
after the material layer of the first substrate 511 is patterned in
another processing chamber, the resulting substrate is transferred to the
deposition chamber 501 and then set on the substrate stage 504. The third
substrate 512 is fixed to the substrate supporting mechanism 505 so that
a surface of the first substrate 511 over which the material layer 513 is
formed faces a deposition target surface of the third substrate 512 which
is a deposition target substrate.

[0104]Further, by moving the substrate supporting mechanism 505, the first
substrate 511 and the third substrate 512 are brought closer to each
other so that a distance between the first substrate 511 and the third
substrate 512 is the distance d. Note that the distance d is defined as a
distance between a surface of the material layer 513 formed over the
first substrate 511 and the surface of the third substrate 512. Further,
when some kind of layer (for example, a conductive layer which functions
as an electrode or an insulator which functions as a partition) is formed
over the third substrate 512, the distance d is defined as the distance
between the surface of the material layer 513 over the first substrate
511 and the surface of the layer formed over the third substrate 512.
Note that, in the case where the surface of the material layer 513 over
the first substrate 511, the surface of the third substrate 512, and the
surface of the layer formed over the third substrate 512 have unevenness,
the distance d is defined as the shortest distance between the surface of
the material layer 513 over the first substrate 511 and an outermost
surface of the third substrate 512 or an outermost surface of the layer
formed over the third substrate 512. Note that the distance d is set to
greater than or equal to 0 mm and less than or equal to 10 μm,
preferably greater than or equal to 0 mm and less than or equal to 5
μm, and more preferably, greater than or equal to 0 mm and less than
or equal to 3 μm.

[0105]Here, the distance d is set to 2 mm. In addition, if the third
substrate 512 is hard like a quartz substrate and formed from a material
which is unlikely to be deformed (warped, bent, or the like), the
distance d can be reduced to 0 mm as the minimum distance. Further, as
for control of the distance between the substrates, although an example
in which the substrate stage 504 is fixed and the substrate supporting
mechanism 505 is moved is illustrated in FIGS. 5A and 5B, a structure in
which the substrate stage 504 is moved and the substrate supporting
mechanism 505 is fixed may be employed. Alternatively, both of the
substrate stage 504 and the substrate supporting mechanism 505 may be
moved. Note that, FIGS. 5A and 5B illustrate a cross section in a step in
which the substrate supporting mechanism 505 is moved so that the first
substrate 511 and the third substrate 512 are brought closer to each
other to have the distance d therebetween.

[0106]In FIGS. 5A and 5B, the substrate stage 504 and the substrate
supporting mechanism 505 include a moving means (not illustrated) for
moving not only in a vertical direction but also in an XY (horizontal)
direction and are controlled by the control device 506, whereby alignment
is performed with high accuracy. Note that the control device 506 is
preferably interlocked with a position alignment mechanism 507 including
an image pickup device for recognizing a position marker over the
substrate (which is the third substrate 512 in this case). In addition, a
sensor for measuring temperature or humidity in the deposition chamber
501 may be provided.

[0107]Then, a surface of the first substrate 511 over which the material
layer 513 is not formed is irradiated with the second light. Accordingly,
the material layer 513 patterned over the first substrate 511 is heated
in a short time and the evaporation material contained in the material
layer 513 is sublimated, whereby the evaporation material is deposited
onto the deposition target surface (that is, a bottom flat surface) of
the third substrate 512 which is disposed so as to face the first
substrate 511. When the first substrate 511 includes the material layer
513 with a desired uniform thickness in advance, deposition can be
performed so that the third substrate 512 has a desired uniform thickness
without a film-thickness monitor in the deposition apparatus illustrated
in FIGS. 5A and 5B. Although a substrate is rotated in a conventional
evaporation apparatus, the deposition target substrate is fixed during
deposition in the deposition apparatus illustrated in FIGS. 5A and 5B.
Therefore, this deposition apparatus is suitable for deposition onto a
large-area glass substrate, which is easily broken. In addition, in the
deposition apparatus in FIGS. 5A and 5B, the evaporation donor substrate
is also fixed during deposition.

[0108]Note that it is preferable that a large area of the light source 510
is opposite the first substrate 511 which is the evaporation donor
substrate.

[0109]In order to reduce thermal effects on the material layer 513 formed
over the first substrate 511 due to heat from the light source on
standby, an openable and closable shutter used for thermal insulation on
standby (before an evaporation process) may be provided between the light
source 510 and the first substrate 511.

[0110]As the lamp light used for the light source 510, a discharge lamp,
such as a flash lamp (a xenon flash lamp or a krypton flash lamp), a
xenon lamp, or a metal halide lamp, or an exothermic lamp such as a
halogen lamp or a tungsten lamp can be used. A flash lamp is capable of
repeatedly emitting very high-intensity light for a short time (0.1
millisecond to 10 milliseconds) over a large area; thus, heating can be
performed uniformly and efficiently regardless of the area of the first
substrate. In addition, heating of the first substrate 511 can also be
controlled by a changing time interval of light emission. In addition,
the running cost can be suppressed because of the long lifetime and low
power consumption at the time of waiting for light emission of the flash
lamp. In addition, immediate heating is facilitated by using the flash
lamp to eliminate a vertical mechanism, a shutter, or the like in a case
of using the heater. Thus, further reduction in size of the deposition
apparatus can be achieved.

[0111]Note that although FIGS. 5A and 5B illustrate an example in which
the light source 510 is placed in the deposition chamber 501, part of an
inner wall of the deposition chamber may be made from a
light-transmitting member and the light source 510 may be placed outside
the deposition chamber. By providing the light source 510 outside the
deposition chamber 501, maintenance such as replacement of light bulbs of
the light source 510 can be made easier.

[0112]Further, a mechanism for controlling the temperature of the third
substrate 512 may be provided. In the case where a cooling mechanism is
provided as the mechanism for controlling the temperature, for example, a
tube through which a heat medium flows is provided in the substrate
supporting mechanism 505 and a cooling medium flows as a heat medium
through the tube, whereby the substrate supporting mechanism 505 can be a
cold plate. Provision of the cooling mechanism in this manner is useful
for deposition of different material layers. On the other hand, when the
heating mechanism is provided, the substrate supporting mechanism 505 may
be provided with a heating means, such as a heater. Provision of the
mechanism for controlling the temperature (heating or cooling) of the
third substrate 512 as described above can also prevent warp or the like
of the substrate.

[0113]Note that although FIGS. 5A and 5B illustrate the deposition
apparatus employing the face-down system in which the deposition surface
of the third substrate 512 faces downward, a deposition apparatus
employing a face-up system in which the deposition surface of the third
substrate 512 faces upward can also be used. Further, although FIGS. 5A
and 5B illustrate the example of the deposition apparatus in which
substrates are horizontally placed, a deposition apparatus in which
substrates are vertically placed can also be used.

[0114]With use of such a deposition apparatus, the material layer over the
evaporation donor substrate can be evaporated onto the deposition target
substrate. Note that since the material layer over the evaporation donor
substrate is patterned in advance, the evaporation material can be
evaporated onto the deposition target substrate with high accuracy.

[0115]Note that with use of a lamp light as the light source, a large area
can be deposited at one time, whereby a take time can be reduced and a
manufacturing cost for a light-emitting device can be reduced.

[0116]Note that the structure in Embodiment 3 can be combined with the
structure in any of Embodiment 1 or Embodiment 2 as appropriate.

Embodiment 4

[0117]Embodiment 4 describes a method for manufacturing a light-emitting
device which is capable of full-color display by forming an EL layer of a
light-emitting element with a plurality of evaporation donor substrates
described in Embodiment 1.

[0118]While Embodiment 1 describes the case where EL layers formed from
the same kind of material are formed over the third substrate, which is a
deposition target substrate, through one deposition process, Embodiment 4
describes the case where three kinds of EL layers each emitting different
colors are formed in respective positions over the third substrate.

[0120]Further, the third substrate which is a deposition target substrate
illustrated in FIG. 2A in Embodiment 1 is prepared. Note that a plurality
of first electrodes 202 is formed over the third substrate.

[0121]First, in a similar manner to FIG. 2A, the third substrate and the
first substrate (R) are superimposed on each other and aligned with each
other for a first deposition process. It is preferable that the third
substrate be provided with an alignment marker. The first substrate (R)
is also preferably provided with an alignment marker. Note that since the
first substrate (R) is provided with a light absorption layer, a portion
of the light absorption layer over and near the alignment marker is
preferably removed in advance. Further, the material layer (R) formed
over the first substrate (R) is patterned so as to be disposed only in
the position where the material layer (R) overlaps with a reflective
layer (R) 601.

[0122]Then, a rear surface of the first substrate (R) (the surface over
which a reflective layer 103, a light absorption layer 104, and a
material layer 105b, which are illustrated in FIG. 2A, are not formed) is
irradiated with light. The light absorption layer 104 absorbs the
irradiation light and conducts heat in a surface direction to the
material layer (R) to sublime an evaporation material contained in the
material layer (R). Thus, the EL layer (R) is formed over the first
electrode over the third substrate 201. After the first deposition is
completed, the first substrate (R) is moved away from the third substrate
201.

[0123]Next, the third substrate 201 and the first substrate (G) are
superimposed on each other and aligned with each other for a second
deposition process. Note that the material layer (G) formed over the
first substrate (G) is formed in a position which is shifted by one pixel
from the material layer (R) formed over the first substrate (R) which has
been used in a first deposition process.

[0124]Then, the rear surface of the first substrate (G) (the surface
illustrated in FIG. 2A, over which the reflective layer 103, the light
absorption layer 104, and the material layer 105b are not formed) is
irradiated with light. The light absorption layer 104 absorbs light and
conducts heat in the plane direction to the material layer (G) to sublime
the evaporation material contained in the material layer (G). Thus, the
EL layer (G) is formed over the first electrode that is next to the first
electrode over the third substrate 201, over which the EL layer (R) is
formed in the first deposition. After the second deposition is completed,
the first substrate (G) is moved away from the third substrate 201.

[0125]Next, the third substrate 201 and the first substrate (B) are
superimposed on each other and aligned with each other for a third
deposition process. Note that the material layer (B) formed over the
first substrate (B) is formed in a position which is shifted by two
pixels from the material layer (R) formed over the first substrate (R)
which has been used in the first deposition process.

[0126]Then, a rear surface of the first substrate (B) (the surface
illustrated in FIG. 2A, over which the reflective layer 103, the light
absorption layer 104, and the material layer 105b are not formed) is
irradiated with light. FIG. 6A is a top view illustrating the state
immediately before the third deposition is performed. In FIG. 6A, the
material layer (B) is formed so as to overlap with the reflective layer
(B) 604; the light absorption layer 104 absorbs light which is
transmitted through an opening portion 602 of the first substrate (B) and
conducts heat in the plane direction to the material layer (B) to
sublimate the evaporation material contained in the material layer (B);
and an EL layer (B) is formed over the first electrode that is next to
the first electrode over the third substrate 201, over which the EL layer
(G) is formed in the second deposition. After the third deposition, the
first substrate (B) is moved away from the third substrate 201.

[0127]In this manner, the EL layer (R) 611, the EL layer (G) 612, and the
EL layer (B) 613 can be formed over the third substrate with regular
intervals. Then, a second electrode is formed over these layers. Thus,
the light-emitting element can be formed.

[0128]Through the above steps, light-emitting elements that exhibit
different emission colors are formed over one substrate, whereby a
light-emitting device capable of full color display can be formed.

[0129]FIGS. 6A and 6B illustrate an example in which each shape of the
reflective layer (R) 601, the reflective layer (G) 603, and the
reflective layer (B) 604 which are formed over the first substrate which
is an evaporation donor substrate is set to be a rectangular shape;
however, there in no particular limitation on the shape thereof. When
light-emitting regions which have the same emission color are adjacent to
each other, the reflective layer (R) 601, the reflective layer (G) 603,
and the reflective layer (B) 604 may be formed successively (in so-called
a linear shape). Note that when the reflective layer (R) 601, the
reflective layer (G) 603, and the reflective layer (B) 604 are formed in
a linear shape, since deposition is performed between the light-emitting
regions which have the same emission color, an insulator or the like is
preferably formed between the first electrodes included in the
light-emitting regions.

[0130]Further, there is no particular limitation on the arrangement of the
pixels. The shape of each pixel may be a polygonal shape, for example, a
hexagon shape as illustrated in FIG. 7A, and a full-color light-emitting
device may be realized by arrangement of an EL layer (R) 711, an EL layer
(G) 712, and an EL layer (B) 713. Note that, in order to form the
polygonal pixel illustrated in FIG. 7A, deposition may be performed with
use of the first substrate including the patterned material layer (R) so
as to overlap with the polygonal reflective layer 701 illustrated in FIG.
7B.

[0131]Further, in manufacture of the light-emitting device capable of
full-color display described in Embodiment 5, the deposition method in
which an evaporation donor substrate is used is employed, whereby a
minute pattern can be formed with high accuracy. Therefore, not only can
the light-emitting element with high definition be obtained but
improvement of characteristics thereof can be realized. Further, since
the evaporation material which is to be unnecessary in pattern formation
of the material layer can be collected to be reused, a manufacturing cost
can be reduced.

[0132]Note that the structure in Embodiment 4 can be combined with a
structure in any of Embodiments 1 to 3 as appropriate.

Embodiment 5

[0133]This embodiment describes a manufacturing method of a light-emitting
element and a light-emitting device applying one embodiment of the
present invention.

[0134]For example, light-emitting elements illustrated in FIGS. 8A and 8B
can be manufactured. In the light-emitting element illustrated in FIG.
8A, a first electrode 802, an EL layer 803 which includes only a
light-emitting layer 813, and a second electrode 804 are stacked in that
order over a substrate 801. One of the first electrode 802 and the second
electrode 804 functions as an anode and the other functions as a cathode.
Holes injected from an anode and electrons injected from a cathode are
recombined in the EL layer 803, whereby light can be emitted. In this
embodiment, the first electrode 802 functions as the anode and the second
electrode 804 functions as the cathode.

[0135]In the light-emitting element illustrated in FIG. 8B, the EL layer
803 in FIG. 8A has a stacked structure including a plurality of layers.
Specifically, a hole-injecting layer 811, a hole-transporting layer 812,
the light-emitting layer 813, an electron-transporting layer 814, and an
electron-injecting layer 815 are provided in that order from the first
electrode 802 side. Note that the EL layer 803 functions by including at
least the light-emitting layer 813 as in FIG. 8A; therefore, all of the
above layers are not always necessary and may be selected as appropriate
to be provided as needed.

[0136]As the substrate 801 in FIGS. 8A and 8B, a substrate having an
insulating surface or an insulating substrate is employed. Specifically,
any of a variety of glass substrates made of glass used for the
electronics industry, such as alminosilicate glass, aluminoborosilicate
glass, or barium borosilicate glass; a quartz substrate; a ceramic
substrate; a sapphire substrate; or the like can be used.

[0137]For the first electrode 802 and the second electrode 804, any of
various types of metals, alloys, electrically conductive compounds,
mixtures thereof, and the like can be used. Specifically, indium
oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or
silicon oxide, indium oxide-zinc oxide (IZO), tungsten oxide-indium oxide
containing tungsten oxide and zinc oxide, or the like is given, for
example. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten
(W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu),
palladium (Pd), a nitride of a metal material (such as titanium nitride:
TiN), or the like can be given.

[0138]These materials are usually formed by a sputtering method. For
example, indium zinc oxide can be formed by a sputtering method using a
target in which zinc oxide is added to indium oxide at 1 wt % to 20 wt %.
A film of indium oxide containing tungsten oxide and zinc oxide can be
formed by a sputtering method using a target in which tungsten oxide and
zinc oxide are added to indium oxide at 0.5 wt % to 5 wt % and 0.1 wt %
to 1 wt %, respectively. Alternatively, by application of a sol-gel
method or the like, an inkjet method, a spin coating method, or the like
may be used for the formation.

[0139]Furthermore, aluminum (Al), silver (Ag), an alloy containing
aluminum, or the like can be used. Moreover, any of the following
materials having a low work function can be used: elements which belong
to Group 1 and Group 2 of the periodic table, that is, alkali metals such
as lithium (Li) and cesium (Cs) and alkaline-earth metals such as
magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys thereof (an
alloy of aluminum, magnesium, and silver, and an alloy of aluminum and
lithium); rare earth metals such as europium (Eu) and ytterbium (Yb), and
alloys thereof; and the like.

[0140]A film of an alkali metal, an alkaline earth metal, or an alloy
including these can be formed by vacuum evaporation. In addition, an
alloy including an alkali metal or an alkaline earth metal can be formed
by a sputtering method. Further, silver paste or the like can be formed
by an inkjet method. The first electrode 802 and the second electrode 804
can be formed as a stacked-layer film without being limited to a
single-layer film.

[0141]Note that in order to extract light emitted from the EL layer 803 to
the outside, one or both of the first electrode 802 and the second
electrode 804 are formed so as to transmit light. For example, one or
both of the first electrode 802 and the second electrode 804 are formed
using a conductive material having a light-transmitting property, such as
indium tin oxide, or formed using silver, aluminum, or the like so as to
have a thickness of several nm to several tens nm. Alternatively, the
first electrode layer 802 or the second electrode 804 can have a
stacked-layer structure including a thin film of a metal such as silver
or aluminum and a thin film of a conductive material having a
light-transmitting property, such as ITO.

[0142]The EL layer 803 (the hole-injecting layer 811, the
hole-transporting layer 812, the light-emitting layer 813, the
electron-transporting layer 814, or the electron-injecting layer 815) of
the light-emitting element described in this embodiment can be formed by
application of any of the deposition methods described in Embodiments 1
to 4.

[0143]For example, in the case where the light-emitting element
illustrated in FIG. 8A is formed, a material layer of the evaporation
donor substrate described in Embodiment 1 is formed from a material which
is used for the EL layer 803 and the EL layer 803 is formed over the
first electrode 802 over the substrate 801 using the evaporation donor
substrate. Then, the second electrode 804 is formed over the EL layer
803, whereby the light-emitting element illustrated in FIG. 8A can be
obtained.

[0144]Various kinds of materials can be used for the light-emitting layer
813. For example, a fluorescent compound which exhibits fluorescence or a
phosphorescent compound which exhibits phosphorescence can be used.

[0145]Examples of a phosphorescent compound which can be used for the
light-emitting layer 813 are given below. For example, as a blue
light-emitting material, the following can be given:
bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III)
tetrakis(1-pyrazolyl)borate (abbr.: FIr6);
bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III) picolinate
(abbr.: FIrpic);
bis[2-(3',5'bistrifluoromethylphenyl)pyridinato-N,C2']iridium(III)
picolinate (abbr.: Ir(CF3ppy)2(pic));
bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III)
acetylacetonate (abbr.: FIr(acac)); and the like. Further, As a green
light-emitting material, the following can be given:
tris(2-phenylpyridinato-N,C2')iridium(III) (abbr.: Ir(ppy)3);
bis(2-phenylpyridinato-N,C2')iridium(III)(acetylacetonate) (abbr.:
Ir(ppy)2(acac)); bis(1,2-diphenyl-1H-benzimidazolato)iridium(III)
acetylacetonate (abbr.: Ir(pbi)2(acac));
bis(benzo[h]quinolinato)iridium(III)acetylacetonate (abbr.:
Ir(bzq)2(acac)); and the like. Further, as a yellow light-emitting
material, the following can be given:
bis(2,4-diphenyl-1,3-oxazolato-N,C2')iridium(III)acetylacetonate
(abbr.: Ir(dpo)2(acac));
bis[2-(4'-perfluorophenylphenyl)pyridinato]iridium(III) acetylacetonate
(abbr.: Ir(p-PF-ph)2(acac));
bis(2-phenylbenzothiazolato-N,C2')iridium(III)acetylacetonate
(abbr.: Ir(bt)2(acac)); and the like. As an orange light-emitting
material, the following can be given:
tris(2-phenylquinolinato-N,C2')iridium(III) (abbr.: Ir(pq)3);
bis(2-phenylquinolinato-N,C2')iridium(III)acetylacetonate (abbr.:
Ir(pq)2(acac)); and the like. As a red light-emitting material, an
organometallic complex, such as
bis[2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3']iridium(acetylacetona-
te) (abbr.: Ir(btp)2(acac)),
bis(1-phenylisoquinolinato-N,C2')iridium(III)acetylacetonate (abbr.:
Ir(piq)2(acac)),
(acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III)
(abbr.: Ir(Fdpq)2(acac)), or
(2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinato)platinum(II) (abbr.:
PtOEP), can be given. In addition, a rare earth metal complex, such as
tris(acetylacetonato)(monophenanthroline)terbium(II) (abbr.:
Tb(acac)3(Phen)),
tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III)
(abbr.: Eu(DBM)3(Phen)), or
tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(-
III) (abbr.: Eu(TTA)3(Phen)), performs light emission (electron
transition between different multiplicities) from a rare earth metal ion;
therefore, such a rare earth metal complex can be used as a
phosphorescent compound.

[0146]Examples of a fluorescent compound which is used for the
light-emitting layer 813 are given below. For example, as a blue
light-emitting material,
N,N-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine
(abbr.: YGA2S),4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamin-
e (abbr.: YGAPA), or the like can be given. As a green light-emitting
material, the following can be given:
N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbr.:
2PCAPA); N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carba-
zol-3-amine (abbr.: 2PCABPhA);
N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine
(abbr.: 2DPAPA);
N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylen-
ediamine (abbr.: 2DPABPhA);
9,10-bis(1,1'-biphenyl-2-yl)]-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanth-
racene-2-amine (abbr.: 2YGABPhA); N,N,9-triphenylanthracen-9-amine (abbr.:
DPhAPhA); and the like. As a yellow light-emitting material, the
following can be given: rubrene;
5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbr.: BPT); and the
like. Further, as a red light-emitting material, the following can be
given: N,N,N',N-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbr.:
p-mPhTD); 7,13-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2--
a]fluoranthene-3,10-diamine (abbr.: p-mPhAFD); and the like.

[0147]Alternatively, the light-emitting layer 813 can have a structure in
which a substance having a high light-emitting property (a dopant
material) is dispersed into another substance (a host material). The
structure in which a substance with a high light-emitting property (a
dopant material) is dispersed into another substance (a host material) is
used for the light-emitting layer, whereby crystallization of the
light-emitting layer can be controlled. Further, concentration quenching
due to high concentration of the substance having a high light-emitting
property can be suppressed.

[0148]As the substance in which the substance having a high light-emitting
property is dispersed, when the substance having a high light emitting
property is a fluorescent compound, a substance having singlet excitation
energy (the energy difference between a ground state and a singlet
excited state) higher than the fluorescent compound is preferably used.
When the substance having a high light-emitting property is a
phosphorescent compound, a substance having higher triplet excitation
energy (the energy difference between a ground state and a triplet
excited state) than the phosphorescent compound is preferably used.

[0150]As the dopant material, any of the aforementioned phosphorescent
compounds and fluorescent compounds can be used.

[0151]When the light-emitting layer 813 has a structure in which a
substance having a high light-emitting property (dopant material) is
dispersed into another substance (host material), a mixed layer of the
host material and the guest material is formed as the material layer over
the evaporation donor substrate. Alternatively, the material layer over
the evaporation donor substrate may have a structure in which a layer
containing a host material and a layer containing a dopant material are
stacked. By forming the light-emitting layer 813 using an evaporation
donor substrate with the material layer having such a structure, the
light-emitting layer 813 contains a substance in which a light-emitting
material is dispersed (a host material) and a substance having a high
light-emitting property (a dopant material), and has a structure in which
the substance having a high light-emitting property (a dopant material)
is dispersed into the substance in which a light-emitting material is
dispersed (a host material). Note that for the light-emitting layer 813,
two or more kinds of host materials and a dopant material may be used, or
two or more kinds of dopant materials and a host material may be used.
Alternatively, two or more kinds of host materials and two or more kinds
of dopant materials may be used.

[0152]When the light-emitting element illustrated in FIG. 8B is formed,
the evaporation donor substrates described in Embodiment 1 which have
material layers formed from respective materials for forming respective
layers in the EL layer 803 (the hole-injecting layer 811, the
hole-transporting layer 812, the electron-transporting layer 814, and the
electron-injecting layer 815) is prepared, and the respective layers are
deposited using their respective evaporation donor substrates by the
method described in Embodiment 1, whereby the EL layer 803 is formed over
the first electrode 802 over the substrate 801. Then, the second
electrode 804 is formed over the EL layer 803, and thus the
light-emitting element in FIG. 8B can be obtained. Note that although all
the layers in the EL layer 803 can be formed by the method described in
Embodiment 1 in this case, only some of the layers in the EL layer 803
may be formed by the method described in Embodiment 1.

[0153]For example, the hole-injecting layer 811 can be formed using
molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide,
manganese oxide, or the like. In addition, it is possible to use a
phthalocyanine-based compound such as phthalocyanine (H2Pc) or
copper phthalocyanine (CuPc), a high molecule such as
poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS), or
the like to form the hole-injecting layer.

[0154]As the hole-injecting layer 811, a layer which contains a substance
having a high hole-transporting property and a substance having an
electron-accepting property can be used. The layer containing a substance
having a high hole-transporting property and a substance having an
electron-accepting property has a high carrier density and an excellent
hole-injecting property. In addition, the layer containing a substance
having a high hole-transporting property and a substance having an
electron-accepting property is used as a hole-injecting layer which is in
contact with an electrode which functions as an anode, whereby various
kinds of metal, alloys, electrically conductive compounds, mixtures
thereof, or the like can be used for the electrode regardless of the work
function of a material of the electrode which functions as an anode.

[0155]The layer which contains a substance having a high hole-transporting
property and a substance having an electron-accepting property can be
formed using, for example, an evaporation donor substrate having a
material layer which is a stack of a layer containing a substance having
a high hole-transporting property and a layer containing a substance
having an electron-accepting property.

[0156]Examples of the substance having an electron-accepting property,
which is used for the hole-injecting layer 811, include:
7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbr.: F4-TCNQ);
chloranil; and the like. In addition, a transition metal oxide is given.
Still other examples are oxide of metal belonging to Group 4 to Group 8
of the periodic table. Specifically, vanadium oxide, niobium oxide,
tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide,
manganese oxide, and rhenium oxide are preferable because of a high
electron-accepting property. Among these, molybdenum oxide is especially
preferable since it is stable in the air and its hygroscopic property is
low so that it can be easily treated.

[0157]As the substance having a high hole-transporting property used for
the hole-injecting layer 811, any of a variety of compounds such as
aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons,
and high molecular compounds (such as oligomers, dendrimers, and
polymers) can be used. Note that the substance having a high
hole-transporting property, which is used for the hole-injecting layer,
is preferably a substance having a hole mobility of 10-6 cm2/Vs
or more. Further, another substance may also be used as long as a
hole-transporting property thereof is higher than an
electron-transporting property. Specific examples of the substance having
a high hole-transporting property, which can be used for the
hole-injecting layer 811, are given below.

[0158]For example, as an aromatic amine compound which can be used for the
hole-injecting layer 811, the following can be used:
4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbr.: NPB);
N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine
(abbr.: TPD); 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbr.:
TDATA); 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine
(abbr.: MTDATA);
4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbr.:
BSPB); and the like. Further, the following can be given:
N,N'-bis(4-methylphenyl)(p-tolyl)-N,N'-diphenyl-p-phenylenediamine
(abbr.: DTDPPA),
4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbr.: DPAB),
4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)b-
iphenyl (abbr.: DNTPD);
1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbr.:
DPA3B); and the like.

[0159]As the carbazole derivative which can be used for the hole-injecting
layer 811, the following can be specifically given:
3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbr.:
PCzPCA1); 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbaz-
ole (abbr.: PCzPCA2);
3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole
(abbr.: PCzPCN1); and the like.

[0160]In addition, as the carbazole derivative which can be used for the
hole-injecting layer 811, the following can be given:
4,4'-di(N-carbazolyl)biphenyl (abbr.: CBP);
1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbr.: TCPB);
9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbr.: CzPA);
1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene; and the like.

[0161]Further, as the aromatic hydrocarbon which can be used for the
hole-injecting layer 811, the following can be given:
2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbr.: t-BuDNA),
2-tert-butyl-9,10-di(1-naphthyl)anthracene,
9,10-bis(3,5-diphenylphenyl)anthracene (abbr.: DPPA),
2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbr.: t-BuDBA),
9,10-di(2-naphthyl)anthracene (abbr.: DNA); 9,10-diphenylanthracene
(abbr.: DPAnth), 2-tert-butylanthracene (abbr.: t-BuAnth);
9,10-bis(4-methyl-1-naphthyl)anthracene (abbr.: DMNA),
9,10-bis[2-(1-naphthyl)phenyl]-2-tert-butylanthracene,
9,10-bis[2-(1-naphthyl)phenyl]anthracene,
2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene,
2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl,
10,10'-diphenyl-9,9'-bianthryl,
10,10'-bis(2-phenylphenyl)-9,9'-bianthryl,
10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene,
tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, and the
like. In addition, pentacene, coronene, or the like can also be used. As
these aromatic hydrocarbons listed here, an aromatic hydrocarbon having a
hole mobility of greater than or equal to 1×10-6 cm2/Vs
and having 14 to 42 carbon atoms is preferably used.

[0162]Note that an aromatic hydrocarbon which can be used for the
hole-injecting layer 811 may have a vinyl skeleton. As examples of the
aromatic hydrocarbon having a vinyl group,
4,4'-bis(2,2-diphenylvinyl)biphenyl (abbr.: DPVBi),
9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbr.: DPVPA), and the
like can be given.

[0163]The hole-injecting layer 811 can be formed by using an evaporation
donor substrate having a material layer which is a stack of a layer
containing a substance having a high hole-transporting property and a
layer containing a substance having an electron-accepting property. When
a metal oxide is used as the substance having an electron-accepting
property, it is preferable that a layer which contains a metal oxide be
formed after the layer which contains a substance having a high
hole-transporting property be formed over the first substrate 801. This
is because, in many cases, metal oxide has a higher decomposition
temperature or an evaporation temperature than a substance having a high
hole-transporting property. The evaporation source with such a structure
makes it possible to efficiently sublimate a substance with a high
hole-transporting property and metal oxide. In addition, local
non-uniformity of the concentration in a film formed by evaporation can
be suppressed. Moreover, there are few kinds of solvents which dissolve
or disperse both a substance with a high hole-transporting property and a
metal oxide, and a mixed solution is not easily formed. Therefore, it is
difficult to directly form a mixed layer by a wet process. However, the
use of the deposition method of the present invention makes it possible
to easily form a mixed layer which contains a substance having a high
hole-transporting property and a metal oxide.

[0164]In addition, the layer containing a substance having a high
hole-transporting property and a substance having an electron-accepting
property is excellent in not only a hole-injecting property but also a
hole-transporting property, and thus the aforementioned hole-injecting
layer 811 may be used as the hole-transporting layer.

[0165]Further, the hole-transporting layer 812 is a layer with a high
hole-transporting property. As the substance having a high
hole-transporting property, for example, an aromatic amine compound, such
as 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbr.: NPB or
α-NPD),
N,N-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine
(abbr.: TPD), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbr.:
TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine
(abbr.: MTDATA), or
4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbr.:
BSPB), or the like can be used. The substances mentioned here mainly have
a hole mobility of 10-6 cm2/Vs or higher. Further, other
substances may also be used as long as a hole-transporting property
thereof is higher than an electron-transporting property. The layer
including a substance having a high hole-transporting property is not
limited to a single layer, but two or more layers including the
aforementioned substances may be stacked.

[0166]The electron-transporting layer 814 contains a substance having a
high electron-transporting property. As the substance having a high
electron-transporting property, for example, a metal complex having a
quinoline skeleton or a benzoquinoline skeleton, such as
tris(8-quinolinolato)aluminum (abbr.: Alq);
tris(4-methyl-8-quinolinolato)aluminum (abbr.: Almq3);
bis(10-hydroxybenzo[h]quinolinato)beryllium (abbr.: BeBq2), or
bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbr.: BAlq)
can be used. Alternatively, a metal complex or the like having an
oxazole-based or thiazole-based ligand, such as
bis[2-(2-hydroxyphenyl)benzoxazolato]zinc (abbr.: Zn(BOX)2) or
bis[2-(2-hydroxyphenyl)benzothiazolato]zinc (abbr.: Zn(BTZ)2) can be
used. Further alternatively, besides the metal complexes,
2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbr.: PBD),
1,3-bis[5-p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbr.:
OXD-7), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole
(abbr.: TAZ01), bathophenanthroline (abbr.: BPhen), bathocuproine (abbr.:
BCP), or the like can be used. The substances mentioned here mainly have
an electron mobility of 10-6 cm2/Vs or higher. If a substance
has a higher electron transporting property than a hole transporting
property, substances other than the above may be used for the electron
transporting layer. Further, the electron transporting layer may be a
stacked layer of two or more layers formed from the above substances as
well as a single layer.

[0167]As the electron injecting layer 815, a compound of alkali metal or
alkaline earth metal such as lithium fluoride (LiF), cesium fluoride
(CsF), or calcium fluoride (CaF2) can be used. Furthermore, a layer,
in which a substance having an electron transporting property is combined
with an alkali metal or an alkaline earth metal, can be employed. For
instance, Alq including magnesium (Mg) can be used. Note that it is
preferable that the layer in which a substance having an
electron-transporting property is combined with an alkali metal or an
alkaline earth metal be used as the electron-injecting layer because
electrons are efficiently injected from the second electrode layer 804.

[0168]Note that there is no particular limitation on a stack-layer
structure of layers of the EL layer 803. The EL layer 803 may be formed
by an appropriate combination of a light-emitting layer with any of
layers which contain a substance having a high electron-transporting
property, a substance having a high hole-transporting property, a
substance having a high electron-injecting property, a substance having a
high hole-injecting property, a bipolar substance (the substance having a
high electron-transporting property and a high hole-transporting
property), and the like.

[0169]Light emission from the EL layer 803 is extracted to the outside
through one or both the first electrode 802 and the second electrode 804.
Accordingly, one of or both the first electrode 802 and the second
electrode 804 are electrodes having a light-transmitting property. When
only the first electrode 802 is a light-transmitting electrode, light is
extracted from the substrate 801 side through the first electrode 802.
Meanwhile, when only the second electrode 804 is a light-transmitting
electrode, light is extracted from a side opposite to the substrate 801
side through the second electrode 804. When both the first electrode 802
and the second electrode 804 are light-transmitting electrodes, light is
extracted from both the substrate 801 side and the side opposite to the
substrate 801 side through the first electrode 802 and the second
electrode 804.

[0170]Although FIGS. 8A and 8B illustrate a structure in which the first
electrode 802 that functions as an anode is provided on the substrate 801
side, the second electrode 804 that functions as a cathode may be
provided on the substrate 801 side.

[0171]The EL layer 803 is formed by any one of the deposition methods
described in Embodiments 1 to 4 or may be formed by a combination of the
deposition methods described in Embodiments 1 to 4. Further, electrodes
or layers may be formed by respective formation methods. Examples of a
dry method include a vacuum evaporation method, an electron beam
evaporation method, a sputtering method, and the like. An ink-jet method,
a spin-coating method, or the like can be employed as a wet process.

[0172]In the light-emitting element according to Embodiment 5, an EL layer
can be formed applying the evaporation donor substrate which is one
embodiment of the present invention. Accordingly, a highly accurate film
can be formed efficiency. Therefore, not only improvement in
characteristics of the light-emitting element, but also improvement in
yield and a reduction in cost can be achieved.

Embodiment 6

[0173]Embodiment 6 describes a light-emitting device which is formed using
the light-emitting element described in Embodiment 5.

[0174]First, a passive-matrix light-emitting device is described with
reference to FIGS. 9A to 9C and FIG. 10.

[0175]In a passive-matrix (also called simple-matrix) light-emitting
device, a plurality of anodes arranged in stripes (in strip form) and a
plurality of cathodes arranged in stripes are provided to be orthogonal
to each other. A light-emitting layer is interposed at each intersection.
Therefore, a pixel at an intersection of an anode selected (to which a
voltage is applied) and a cathode selected emits light.

[0176]FIG. 9A is a top view of a pixel portion before sealing. FIG. 9B is
a cross-sectional view taken along a dashed line A-A' in FIG. 9A. FIG. 9c
is a cross-sectional view taken along a dashed line B-B' in FIG. 9A.

[0177]As a base insulating layer, an insulating layer 904 is formed over a
substrate 901. Note that the insulating layer 904 is not necessarily
formed if the base insulating layer is not needed. A plurality of first
electrode layers 913 is arranged in stripes with regular intervals over
the insulating layer 904. Partitions 914 each having an opening portion
corresponding to respective pixels are provided over the first electrodes
913. The partitions 914 having an opening portion are formed from an
insulating material (a photosensitive or nonphotosensitive organic
material such as polyimide, acrylic, polyamide, polyimide amide, resist,
or benzocyclobutene, or an SOG film such as a SiOx film containing an
alkyl group). Note that each opening portion corresponding to a pixel is
a light-emitting region 921.

[0178]A plurality of inversely tapered partitions 922 is provided over the
partitions 914 each having an opening portion, which are parallel to each
other and extend in a direction to intersect the first electrodes 913.
The inversely tapered partitions 922 are formed by a photolithography
method using a positive photosensitive resin by which an unexposed
portion remains as a pattern and controlling the amount of light exposure
or developing time in such a manner that a lower portion of the pattern
is etched more.

[0179]The total thickness of the partition 914 having an opening portion
and the inversely tapered partition 922 is set to be larger than the
total thickness of an EL layer and a second electrode 916. Thus, an EL
layer which is divided into plural regions, specifically, an EL layer (R)
(915R) formed from a material which exhibits red light emission, an EL
layer (G) (915G) formed from a material which exhibits green light
emission, and an EL layer (B) (915B) formed from a material which
exhibits blue light emission; and the second electrodes 916 are formed.
Note that the plurality of separated regions is electrically isolated
from one another.

[0180]The second electrodes 916 are electrodes arranged in stripes which
are parallel to each other and extend in the direction intersecting with
the first electrodes 913. Note that the EL layer and a part of a
conductive layer forming the second electrodes 916 are also formed over
the inversely tapered partitions 922; however, they are separated from
the EL layer (R) (915R), the EL layer (G) (915G), the EL layer (B)
(915B), and the second electrodes 916. Note that the EL layer in this
embodiment is a layer including at least a light-emitting layer and may
include a hole-injecting layer, a hole-transporting layer, an
electron-transporting layer, an electron-injecting layer, or the like in
addition to the light-emitting layer.

[0181]Here, an example is described in which the EL layer (R) (915R), the
EL layer (G) (915G), and the EL layer (B) (915B) are selectively formed
to form a light-emitting device which provides three kinds of light
emission (red (R), green (G), blue (B)) and is capable of performing
full-color display. The EL layer (R) (915R), the EL layer (G) (915G), and
the EL layer (B) (915B) are formed in stripes to be parallel to each
other. These EL layers may be formed by applying any one of the methods
described in Embodiments 1 to 4.

[0182]Further, sealing is performed using a sealant such as a sealant can
or a glass substrate for sealing, if necessary. In this embodiment, a
glass substrate is used as a sealing substrate, and a substrate and the
sealing substrate are attached to each other with an adhesive material
such as a sealing material to seal a space surrounded by the adhesive
material such as a sealing material. The space that is sealed is filled
with a filler or a dried inert gas. In addition, a desiccant or the like
may be put between the substrate and the sealing material so that
reliability of the light emitting device is increased. The desiccant
agent removes a minute amount of moisture for sufficient desiccation. For
the desiccant agent, a substance that adsorbs moisture by chemical
adsorption such as oxide of alkaline earth metal such as calcium oxide or
barium oxide can be used. In addition, a substance that adsorbs moisture
by physical adsorption such as zeolite or silicagel may be used.

[0183]The desiccant agent is not necessarily provided if the sealant that
covers and is contact with the light-emitting element is provided to
sufficiently block the outside air.

[0184]Next, FIG. 10 illustrates a top view of the case in which the
passive-matrix light-emitting device in FIGS. 9A to 9C is mounted with an
FPC or the like.

[0185]In FIG. 10, scan lines and data lines intersect so as to be
orthogonal to each other in a pixel portion for displaying images.

[0186]Here, the first electrodes 913 in FIGS. 9A to 9C correspond to scan
lines 1003 in FIG. 10; the second electrodes 916 correspond to data lines
1002; and the inversely tapered partitions 922 correspond to partitions
1004. EL layers are sandwiched between the data lines 1002 and the scan
lines 1003, and an intersection portion indicated by a region 1005
corresponds to one pixel.

[0187]Note that the scan lines 1003 are electrically connected at their
ends to connection wirings 1008, and the connection wirings 1008 are
connected to an FPC 1009b through an input terminal 1007. The data lines
1002 are connected to an FPC 1009a through an input terminal 1006.

[0188]In addition, an optical film such as a polarizing plate, a
circularly polarizing light plate (including an elliptically polarizing
plate), a retardation plate (a λ/4 plate or a λ/2 plate), or
a color filter may be provided as appropriate on the light-emission
surface. Further, the polarizing plate or the circulary polarizing plate
may be provided with an anti-reflection film. For example, an anti-glare
treatment which can diffuse reflected light in the depression/projection
of the surface, and reduce glare can be performed.

[0189]Although FIG. 10 illustrates the example in which a driver circuit
is not provided over the substrate, the present invention is not
particularly limited thereto. An IC chip including a driver circuit may
be mounted over the substrate.

[0190]In the case where an IC chip is mounted, a data line side IC and a
scan line side IC, in each of which a driver circuit for transmitting a
signal to the pixel portion is formed, are mounted on the periphery of
(outside of) the pixel portion by a COG method. As an alternative
mounting technique to the COG bonding, TCP or wire bonding may be used.
TCP is a TAB tape on which an IC is mounted, and the IC is mounted by
connecting the TAB tape to wires on the element forming substrate. Each
of the data line side IC and the scanning line side IC may be formed
using a silicon substrate. Alternatively, it may be formed in such a
manner that a driver circuit is formed using a TFT over a glass
substrate, a quartz substrate, or a plastic substrate. Although described
here is an example in which one IC is provided on one side, a plurality
of ICs may be provided on one side.

[0191]Next, an example of an active-matrix light-emitting device is
described with reference to FIGS. 11A and 11B. Note that FIG. 11A is a
top view illustrating a light-emitting device and FIG. 11B is a cross
sectional view taken along a dashed line A-A' in FIG. 11A. The
active-matrix light-emitting device of this embodiment includes a pixel
portion 1102 provided over an element substrate 1110, a driver circuit
portion (a source-side driver circuit) 1101, and a driver circuit portion
(a gate-side driver circuit) 1103. The pixel portion 1102, the driver
circuit portion 1101, and the driver circuit portion 1103 are sealed,
with a sealant 1105, between the element substrate 1110 and a sealing
substrate 1104.

[0192]In addition, over the element substrate 1110, a lead wiring 1108 for
connecting an external input terminal which transmits a signal (for
example, a video signal, a clock signal, a start signal, or a reset
signal) or an electric potential to the driver circuit portion 1101 and
the driver circuit portion 1103 is provided. Here, an example in which an
FPC (flexible printed circuit) 1109 is provided as the external input
terminal is described. Although only the FPC is illustrated here, this
FPC may be provided with a printed wiring board (PWB). The light-emitting
device in this specification includes not only a light-emitting device
body but also a state in which an FPC or a PWB is attached thereto.

[0193]A sectional structure thereof is described with reference to FIG.
11B. The driver circuit portions and the pixel portion are formed over
the element substrate 1110; however, the pixel portion 1102 and the
driver circuit portion 1101 which is the source-side driver circuit are
illustrated in FIG. 11B.

[0194]An example is illustrated in which a CMOS circuit which is the
combination of an n-channel TFT 1123 and a p-channel TFT 1124 is formed
as the driver circuit portion 1101. Note that a circuit included in the
driver circuit portion may be formed of various CMOS circuits, PMOS
circuits, or NMOS circuits. Although a driver-integrated type where the
driver circuit is formed over the substrate is described in this
embodiment, the present invention is not limited to this structure, and
the driver circuit may be formed outside the substrate, not over the
substrate.

[0195]The pixel portion 1102 includes a plurality of pixels, each of which
includes a switching TFT 1111, a current-controlling TFT 1112, and a
first electrode 1113 which is electrically connected to a wiring (a
source electrode or a drain electrode) of the current-controlling TFT
1112. Note that an insulator 1114 is formed to cover end portions of the
first electrode 1113. In this embodiment, the insulator 1114 is formed
using a positive photosensitive acrylic resin.

[0196]Further, the insulator 1114 is preferably formed so as to have a
curved surface with curvature at an upper end portion or a lower end
portion of the insulator 1114 in order to obtain favorable coverage with
a film which is to be stacked over the insulator 1114. For example, in
the case of using a positive photosensitive acrylic resin as a material
for the insulator 1114, the insulator 1114 is preferably formed so as to
have a curved surface with a curvature radius (0.2 μm to 3 μm) at
the upper end portion thereof. Note that either a negative photosensitive
material which becomes insoluble in an etchant by light irradiation or a
positive photosensitive material which becomes soluble in an etchant by
light irradiation can be used for the insulator 1114. As the insulator
1114, without limitation to an organic compound, either an organic
compound or an inorganic compound, such as silicon oxide or silicon
oxynitride, can be used.

[0197]An EL layer 1100 and a second electrode 1116 are stacked over the
first electrode 1113. Note that when an ITO film is used as the first
electrode layer 1113, and a stacked-layer film of a titanium nitride film
and a film containing aluminum as its main component or a stacked-layer
film of a titanium nitride film, a film containing aluminum as its main
component, and a titanium nitride film is used as the wiring of the
current-controlling TFT 1112 which is connected to the first electrode
layer 1113, resistance of the wiring is low and favorable ohmic contact
with the ITO film can be obtained. Note that, although not illustrated in
FIGS. 11A and 11B, the second electrode layer 1116 is electrically
connected to the FPC 1109 which is an external input terminal.

[0198]In the EL layer 1100, at least the light-emitting layer is provided,
and in addition to the light-emitting layer, a hole injecting layer, a
hole-transporting layer, an electron-transporting layer, and/or an
electron-injecting layer are/is provided as appropriate. The first
electrode 1113, the EL layer 1100, and the second electrode 1116 are
stacked, whereby a light-emitting element 1115 is formed.

[0199]Although the cross sectional view in FIG. 11B illustrates only one
light-emitting element 1115, the plurality of light-emitting elements are
arranged in matrix in the pixel portion 1102. Light-emitting elements
which provide three kinds of light emissions (R, G, and B) are
selectively formed in the pixel portion 1102, so that a light-emitting
device capable of full-color display can be formed. Alternatively, by a
combination with color filters, a light emitting device capable of
full-color display may be formed.

[0200]Furthermore, the sealing substrate 1104 and the element substrate
1110 are bonded to each other with the sealing material 1105, whereby the
light-emitting element 1115 is provided in a space 1107 surrounded by the
element substrate 1110, the sealing substrate 1104, and the sealing
material 1105. Note that the space 1107 may be filled with an inert gas
(for example, nitride or argon) or the sealant 1105.

[0201]Note that an epoxy-based resin is preferably used for the sealant
1105. In addition, it is preferable to use a material that allows
permeation of moisture or oxygen as little as possible. The sealing
substrate 1104 may be formed with a plastic substrate formed of FRP
(fiberglass-reinforced plastics), PVF (polyvinyl fluoride), mylar,
polyester, acrylic, or the like as well as a glass substrate or a quartz
substrate.

[0202]As described above, a light-emitting device can be obtained
according to one embodiment of the present invention. An active-matrix
light-emitting device is likely to require a high manufacturing cost per
device because TFTs are manufactured; however, application of one
embodiment of the present invention makes it possible to drastically
reduce loss of materials in forming light-emitting elements. Thus, a
reduction in a manufacturing cost can be achieved.

[0203]According to one embodiment of the present invention, formation of
an EL layer included in a light-emitting element can be facilitated as
well as manufacture of a light-emitting device including the
light-emitting element. In addition, a precise pattern can be formed, and
thus a high-definition light-emitting device can be obtained.

[0204]Note that the structure in Embodiment 6 can be combined with the
structure in any of Embodiments 1 to 5 as appropriate.

Embodiment 7

[0205]In this embodiment, various electronic devices each of which is
completed using the light-emitting device manufactured by application of
one embodiment of the present invention are described using FIGS. 12A to
12E.

[0206]As examples of electronic devices to which the light-emitting device
according to one embodiment of the present invention is applied, there
are televisions, cameras such as video cameras or digital cameras, goggle
type displays (head-mounted displays), navigation systems, audio playback
devices (car audio systems, audio systems, or the like), laptop
computers, game machines, portable information terminals (mobile
computers, cellular phones, smartphones, portable game machines,
electronic book readers, or the like), image playback devices in which a
recording medium is provided (devices that are capable of playing back
recording media such as digital versatile discs (DVDs) and equipped with
a display device that can display an image), lighting devices, and the
like. Specific examples of these electronic devices are illustrated in
FIGS. 12A to 12E.

[0207]FIG. 12A illustrates a display device including a chassis 8001, a
supporting base 8002, a display portion 8003, a speaker portion 8004, a
video input terminal 8005, and the like. The display device is
manufactured by using a light-emitting device formed according to one
embodiment of the present invention for the display portion 8003. Note
that the display device includes all devices for displaying information
such as for a personal computer, for receiving TV broadcasting, and for
displaying an advertisement. With application of one embodiment of the
present invention, deterioration of a material in film formation is
prevented and pattern can be formed with high accuracy. Therefore, a
light-emitting device with high definition, high light-emitting
characteristics and the long lifetime can be provided.

[0208]FIG. 12B illustrates a computer, which includes a main body 8101, a
housing 8102, a display portion 8103, a keyboard 8104, an external
connection port 8105, a pointing device 8106, and the like. This computer
is manufactured using a light-emitting device which is formed according
to one embodiment of the present invention in the display portion 8103.
With application of one embodiment of the present invention,
deterioration of a material in film formation is prevented and pattern
can be formed with high accuracy. Therefore, a computer with high
definition, high light-emitting characteristics, and the long lifetime
can be provided.

[0209]FIG. 12c illustrates a video camera including a main body 8201, a
display portion 8202, a housing 8203, an external connection port 8204, a
remote control receiving portion 8205, an image receiving portion 8206, a
battery 8207, an audio input portion 8208, operation keys 8209, an
eyepiece portion 8210, and the like. This video camera is manufactured
using a light-emitting device which is formed according to one embodiment
of the present invention in the display portion 8202. With application of
one embodiment of the present invention, deterioration of a material in
film formation is prevented and pattern can be formed with high accuracy.
Therefore, a video camera with high definition, high light-emitting
characteristics, and the long lifetime can be provided.

[0210]FIG. 12D illustrates a desk lamp including a lighting portion 8301,
a shade 8302, an adjustable arm 8303, a support 8304, a base 8305, and a
power supply switch 8306. This desk lamp is manufactured using a
light-emitting device according to one embodiment of the present
invention in the lighting portion 8301. Note that the term `lighting
appliance` also encompasses ceiling lights, wall lights, and the like.
With application of one embodiment of the present invention,
deterioration of a material in film formation is prevented and pattern
can be formed with high accuracy. Therefore, a desk lamp with high
definition, high light-emitting characteristics, and the long lifetime
can be provided.

[0211]FIG. 12E illustrates a cellular phone including a main body 8401, a
housing 8402, a display portion 8403, an audio input portion 8404, an
audio output portion 8405, operation keys 8406, an external connection
port 8407, an antenna 8408, and the like. This cellular phone is
manufactured using a light-emitting device according to one embodiment of
the present invention in the lighting portion 8403. With application of
one embodiment of the present invention, deterioration of a material in
film formation is prevented and pattern can be formed with high accuracy.
Therefore, a cellular phone with high definition, high light-emitting
characteristics, and the long lifetime can be provided.

[0212]FIG. 13A also illustrate a cellular phone and FIG. 13A is a front
view, FIG. 13B is a rear view, and FIG. 13c is a development view. A main
body 1301 is a so-called smartphone which has both functions of a
cellular phone and a portable information terminal, and incorporates a
computer and can process a variety of data processing in addition to
voice calls.

[0213]The main body 1301 includes two housing: a housing 1302 and a
housing 1303. The housing 1302 includes a display portion 1304, a speaker
1305, a microphone 1306, operation keys 1307, a pointing device 1308, a
camera lens 1309, an external connection terminal 1310, an earphone
terminal 1311, and the like, while the housing 1303 includes a keyboard
1312, an external memory slot 1313, a camera lens 1314, a light 1315, and
the like. In addition, an antenna is incorporated in the housing 1302.

[0214]Further, in addition to the above structure, the smartphone may
incorporate a non-contact IC chip, a small size memory device, or the
like.

[0215]In the display portion 1304, the display device described in the
above embodiment can be incorporated, and display direction can be
changed depending on a usage pattern. Since the camera lens 1309 is
provided in the same surface as the display portion 1304, the cellular
phone can be used as a videophone. Further, a still image and a moving
image can be taken with the camera lens 1314 and the light 1315 using the
display portion 1304 as a viewfinder. The speaker 1305 and the microphone
1306 are not limited to use for verbal communication, and can be used for
a videophone, recording, reproduction, and the like.

[0216]With the use of operation keys 1307, making and receiving calls,
inputting simple information of e-mails or the like, scrolling of the
screen, moving the cursor and the like are possible. In addition, the
housings 1302 and 1303 overlap with each other (FIG. 13A) slide and can
be developed as illustrated in FIG. 13c, so that the cellular phone can
be used as a portable information terminal. In this case, smooth
operation can be conducted by using the keyboard 1312 or the pointing
device 1308. The external connection terminal 1310 can be connected to an
AC adapter and various types of cables such as a USB cable, and charging
and data communication with a personal computer are possible.
Furthermore, a large amount of data can be stored and moved by inserting
a recording medium into the external memory slot 1313.

[0217]Further, in addition to the aforementioned functions, the cellular
phone may also have an infrared communication function, a television
reception function, or the like.

[0218]Note that the aforementioned cellular phone is manufactured using a
light-emitting device which is formed according to one embodiment of the
present invention in the display portion 1304. With application of one
embodiment of the present invention, deterioration of a material in film
formation is prevented and pattern can be formed with high accuracy.
Therefore, a cellular phone with high definition, high light-emitting
characteristics, and the long lifetime can be provided.

[0219]As described above, an electronic device or a lighting device can be
obtained by using the light-emitting device according to one embodiment
of the present invention. The applicable range of the light-emitting
device according to one embodiment of the present invention is so wide
that the light-emitting element can be applied to electric devices of
every field.

[0220]Note that the structure in Embodiment 7 can be combined with a
structure in any of Embodiments 1 to 6 as appropriate.

[0221]This application is based on Japanese Patent Application serial no.
2008-103425 filed with Japan Patent Office on Apr. 11, 2008, the entire
contents of which are hereby incorporated by reference.