DigiTimes reports that Hynix has developed 1Gb DDR3 DRAM built on 40nm process technology. It delivers a maximum speed of 2133Mbps and operates at a wide range of voltage. The mass production of 1Gb DDR3 DRAM using Hynix’ 40nm process technology is slated to begin in the third quarter of 2009.

DigiTimes reports that Hynix has developed 1Gb DDR3 DRAM built on 40nm process technology. It delivers a maximum speed of 2133Mbps and operates at a wide range of voltage. The mass production of 1Gb DDR3 DRAM using Hynix’ 40nm process technology is slated to begin in the third quarter of 2009.

Hynix’ overall productivity of 40nm 1Gb DDR3 DRAM has increased by more than 50% over its existing 50nm process technology. By applying technology of ‘three-dimensional transistor’ architecture, the product minimizes leakage current and further reduces overall power consumption.

The new 1Gb memory chip meets Intel’s DDR3 DRAM specification compliance and the memory module will be examined for certification by Intel. Hynix is looking to expand the adoption of its 40nm technology and DDR3 specification of high speed and low power consumption to other products such as mass storage memory module, mobile DRAM and graphics DRAM.