The main purpose of this work is to demonstrate the possibility of fabrication of SC and solar modules based on SIS structures using spray pyrolisis technique. Thin films, deposited at 450oC on the nSi crystals surface, are used for the formation of n+ITO-SiO2-nSi structures with a shallow junction using the special designed installation. SiO2 insulator layers were obtained on the silicon wafers surface by different methods: anodic, thermal or chemical oxidation. Silicon wafers oriented in the (100) plane with different electron concentration 1015cm-3-1016cm-3 were used as substrates for the fabrication of SIS structures. The rear n-n+ junction is an usual back surface field structure which was obtained by a diffusion process from POCl3 gas mixture. SC on the base of n+ITO-SiO2-n-n+Si isotype structures with active area of 24cm2 and efficiency 10,11% have been fabricated. PV modules with the output power up to 30W have been fabricated on the base of mentioned structures.