Abstract

Transistor action has been observed for the first time in a Si‐TaSi2 eutectic composite. These devices, utilizing the insitu cylindrical Schottky junctions between the Si matrix and the TaSi2 rod phase, have characteristics typical of a metal‐semiconductor field‐effect transistor (MESFET). However, unlike a conventional planar device like a MESFET, eutectic transistors are resistant to avalanche breakdown. A device is demonstrated that blocks 600 V, a value that is three times larger than would be expected for a planar device of the same carrier concentration.