Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
/ F. Moscatelli (CNR-IMM Bologna) ; D. Passeri (DI of University of Perugia and INFN Perugia) ; A. Morozzi (DI of University of Perugia and INFN Perugia) ; R. Mendicino (DII of University of Trento and TIFPA-INFN) ; G.-F. Dalla Betta (DII of University of Trento and TIFPA-INFN) ; G. M. Bilei (INFN Perugia)
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). [...] AIDA-2020-PUB-2016-007.-
Geneva : CERN, 2016
- Published in : IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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