Power modules are added for dual, single-phase and single switch topologies

Power modules offering dual, single-phase bridge, and single-switch topologies are available from Vishay Intertechnology in a range of current and voltage ratings.

The portfolio of power modules in the SOT-227 package from Vishay Intertechnology now include seven new devices featuring ThunderFET power MOSFETs and standard, FRED Pt, and Trench MOS Barrier Schottky (TMBS) diodes. The modules are available in dual, single-phase bridge, and single-switch topologies with a variety of current and voltage ratings.

The VS-FC420SA15 and VS-FC270SA20 single-switch modules featuring ThunderFET power MOSFETs are the first available from the company with voltages of 150 and 200V, respectively. They offer up to 400A, low on-resistance down to 1.93-milliOhm at 10V, and gate charge of 250nC, suitable for high performance DC/DC converters, battery chargers, AC motor drives, and UPS.

Vishay’s first 1200V insulated standard recovery rectifier modules in the SOT-227 package are the VS-RA160FA120 and VS-RA220FA120. Both are optimised for OR-ing applications in electric vehicle chargers and single- and three-phase bridges. The dual devices feature high forward current to 220A, low 0.26 degree C/W junction to case thermal resistance, and low forward voltage drop down to 1.22V.

Featuring FRED Pt diodes, Vishay’s VS-UFH280FA30 insulated Hyperfast rectifier module is the company’s first to feature 300V in a dual topology, while the VS-UFH60BA65 is its first ‘ultra-fast’ single-phase bridge device. Intended for low voltage, high frequency inverters in welding machines and UPS, and output rectification for charging stations and switch mode power supplies, the devices offer soft recovery characteristics, fast reverse recovery times down to 58 nano seconds and current to 280A.

For high frequency switch mode power supplies, DC/DC converters, and plasma cutters, Vishay’s VS-QA300FA17 insulated TMBS rectifier module is the company’s first with a 170V rating. Offered in a dual topology, the device features current of 300A, low forward voltage of 0.98V at 200A, and low junction to case thermal resistance of 0.26 degree C/W per leg (0.13 degree C/W per module).

The power MOSFET, Hyperfast, and TMBS modules provide high temperature performance to +175 degree C, compared with competing devices which typically offer operating temperatures to +150 degree C. The devices are RoHS-compliant and UL-approved.

Samples and production quantities of the new power modules are available now, with lead times of 12 to 14 weeks for large orders.

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