H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/10—Details of semiconductor or other solid state devices to be connected

H01L2924/102—Material of the semiconductor or solid state bodies

H01L2924/1025—Semiconducting materials

H01L2924/1026—Compound semiconductors

H01L2924/1027—IV

H01L2924/10272—Silicon Carbide [SiC]

H—ELECTRICITY

H01—BASIC ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/10—Details of semiconductor or other solid state devices to be connected

H01L2924/102—Material of the semiconductor or solid state bodies

H01L2924/1025—Semiconducting materials

H01L2924/1026—Compound semiconductors

H01L2924/1032—III-V

H01L2924/1033—Gallium nitride [GaN]

H—ELECTRICITY

H01—BASIC ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/10—Details of semiconductor or other solid state devices to be connected

H01L2924/11—Device type

H01L2924/14—Integrated circuits

H01L2924/141—Analog devices

H01L2924/142—HF devices

H01L2924/1421—RF devices

H—ELECTRICITY

H01—BASIC ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/30—Technical effects

H01L2924/301—Electrical effects

H01L2924/3011—Impedance

H—ELECTRICITY

H01—BASIC ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/30—Technical effects

H01L2924/301—Electrical effects

H01L2924/3011—Impedance

H01L2924/30111—Impedance matching

Abstract

In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a heat sink.

PCT/US2012/0471352011-07-182012-07-18Method and design of an rf thru-via interconnect
WO2013055423A2
(en)