Abstract

The authors combine metal oxide semiconductor(MOS) gated diode measurements and very sensitive electrically detected electron spin resonancemeasurements to detect and identify negative bias temperature instability(NBTI) generated defect centers in fully processed pMOS field effect transistors. Both short and long term stressing defects are different from those generated by NBTI in devices. The spectra generated by long term stressing differ from the short term stressing signals and are somewhat similar to those observed in plasma nitrided oxide devices. The results suggest that NBTI defects are located in the interfacial layer of these devices.