The optical and physical properties of hexagonal boron nitride single crystals grown from a molten metal solution are reported. The hBN crystals were grown by precipitation from a nickel-chromium flux with a boron nitride ...

Palladium, Pt, and Cr/Pt contacts to the wide band gap icosahedral boride semiconductor B₁₂As₂ have been studied. All Pd and Pt contacts exhibited nonlinear I-V characteristics, while Cr/Pt contacts were Ohmic. The specific ...

Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were ...

In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC
seeds by the sublimation-recombination method were assessed. The positions of the defects in
AlN were first identified by defect ...

The epitaxy of scandium nitride deposited by hydride vapor phase epitaxy on 6HSiC(
0001) substrates is reported. The structure and composition of the deposited films
were dependent on both the scandium metal source and ...

Icosahedral boron phosphide (B12P2) is a wide bandgap semiconductor (3.35 eV) that has been reported to “self-heal” from high-energy electron bombardment, making it attractive for potential use in radioisotope batteries, ...

This paper reports on the influence of deposition temperature on the structure, composition, and electrical properties of TiO[subscript 2] thin films deposited on n-type silicon (100) by plasma-assisted atomic layer ...

Oxygen degrades the properties of AlN, thus producing bulk single crystals with low oxygen
concentrations is an important goal. Most of the oxygen in bulk AlN single crystals grown by
the sublimation-recondensation method ...

In contrast to other III-nitride semiconductors GaN and AlN, the intrinsic (or free) exciton transition in hexagonal boron nitride (h-BN) consists of rather complex fine spectral features (resolved into six sharp emission ...

Hexagonal boron nitride (hBN) single crystals were grown using a Ni–Cr flux growth method. The crystallization cooling rate, soak temperature and soak time were controlled to determine their effect on crystal size and ...

The yellow color of bulk AlN crystals was found to be caused by the optical absorption of light with wavelengths shorter than that of yellow. This yellow impurity limits UV transparency and hence restricts the applications ...