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Abstract

Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dynamic properties of microring quantum dot lasers grown directly on exact (001) GaP/Si. Effectively, a single-mode operation was observed at 1.3 μm with modes at spectrally distant locations. High temperature stability with T0∼103K has been achieved with a low threshold of 3 mA for microrings with an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Small signal modulation responses were measured for the first time for the microrings directly grown on silicon, and a 3 dB bandwidth of 6.5 GHz was achieved for a larger ring with an outer ring radius of 50 μm and a ring waveguide width of 4 μm. The directly modulated microring laser, monolithically integrated on a silicon substrate, can incur minimal real estate cost while offering full photonic functionality.

Fig. 3. Measured L-I-V curve of a microring laser with intrinsic active region. The device features an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Inset, zoomed-in view of the L-I curve in the low-injection region.

Fig. 5. Measured L-I curves as a function of the heat sink temperature for two microring lasers with (a) an intrinsic active region and (b) a modulation p-doped active region. Both devices have an outer ring radius of 15 μm and a ring waveguide width of 4 μm. (c) Temperature-dependent threshold current versus heat sink temperature for the two microring lasers, where the dashed lines represent the linear fit to the experimental data.

Fig. 6. Threshold currents as a function of outer ring radius for microring lasers (a) with an intrinsic active region and a modulation p-doped active region on the GaP/Si, and (b) on GaP/Si substrate and native GaAs substrate with an intrinsic active region.

Fig. 7. Small-signal modulation responses of the QD ring laser biased from 21 to 86 mA. The fitting curves are drawn using a three-pole fitting function H(f). Inset, L-I-V characteristics from the same device.