Effect of Radiation-Induced Defect Clusters on Current Flow through a Quasi-ballistic GaAs MESFET

Effect of Radiation-Induced Defect Clusters on Current Flow through a Quasi-ballistic GaAs MESFET
Obolenskii, S.
2004-10-18 00:00:00
A computer simulation and an experiment are conducted to investigate radiation-induced defect formation in the channel of a quasi-ballistic GaAs MESFET using a Au/Ti gate. Irradiation with high-energy neutrons is considered. The study is focused on the conditions under which the gaps between the space-charge regions of defect clusters are comparable in size with the de Broglie wavelength of electrons in GaAs. It is shown that neutron irradiation can improve the performance of GaAs MESFETs if these use a Au/Ti gate structure.
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Effect of Radiation-Induced Defect Clusters on Current Flow through a Quasi-ballistic GaAs MESFET

Abstract

A computer simulation and an experiment are conducted to investigate radiation-induced defect formation in the channel of a quasi-ballistic GaAs MESFET using a Au/Ti gate. Irradiation with high-energy neutrons is considered. The study is focused on the conditions under which the gaps between the space-charge regions of defect clusters are comparable in size with the de Broglie wavelength of electrons in GaAs. It is shown that neutron irradiation can improve the performance of GaAs MESFETs if these use a Au/Ti gate structure.