Chikama, JP

Hiroyuki Chikama, Tokyo JP

Patent application number

Description

Published

20100149803

LAMP - A lamp can includes: a first reflective surface which can be provided on a surface of a circular shaped member, a radius of a top of the annular member can be longer than a radius of a bottom of the annular member; a second reflective surface which can be arranged inside of the first reflective surface and can have a conical shape, a vertex of the second reflective surface can be directed to a top side of the first reflective surface; and a plurality of light emitters which can be annularly arranged on the first reflective surface around the second reflective surface at a predetermined interval so as to be projected on the second reflective surface.

06-17-2010

Terumi Chikama, Kawasaki-Shi JP

Patent application number

Description

Published

20110262140

MULTI-WAVELENGTH LIGHT AMPLIFIER - A multi-wavelength light amplifier includes a first-stage light amplifier which has a first light amplifying optical fiber amplifying a light input, a second stage light amplifier which has a second light amplifying optical fiber amplifying a first light output from the first-stage light amplifier, and an optical system which maintains a second light output of the second-stage light amplifier at a constant power level. The first-stage and second-stage light amplifiers have different gain vs wavelength characteristics so that the multi-wavelength light amplifier has no wavelength-dependence of a gain thereof.

10-27-2011

Terumi Chikama, Kawasaki JP

Patent application number

Description

Published

20130045007

MULTI-WAVELENGTH LIGHT AMPLIFIER - A multi-wavelength light amplifier includes a first-stage light amplifier which has a first light amplifying optical fiber amplifying a light input, a second stage light amplifier which has a second light amplifying optical fiber amplifying a first light output from the first-stage light amplifier, and an optical system which maintains a second light output of the second-stage light amplifier at a constant power level. The first-stage and second-stage light amplifiers have different gain vs wavelength characteristics so that the multi-wavelength light amplifier has no wavelength-dependence of a gain thereof.

02-21-2013

Yoshimasa Chikama, Osaka-Shi JP

Patent application number

Description

Published

20100316870

MANUFACTURING METHOD FOR DISPLAY DEVICE AND DISPLAY DEVICE - A method for manufacturing a display device includes a first step of preparing a first substrate which has a first area to be etched and a second area located at a periphery of the first area and which has a display element on its surface, a second step of etching and removing the first area of the first substrate, a third step of forming a second substrate on a surface of the first substrate that is opposite to the surface on which the display element is located, and a fourth step of removing the second area of the first substrate.

12-16-2010

20110043720

METHOD FOR MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE - A method for manufacturing a display device includes; a first step of preparing a plastic substrate placed on a support substrate, a second step of bonding a first region of an expanded silicone sheet to an end of the plastic substrate, and bonding a second region of the silicone sheet to the support substrate having the plastic substrate placed thereon, thereby fixing the plastic substrate to the support substrate by a biasing force of the silicone sheet, and a third step of laminating a plurality of thin films over the plastic substrate fixed to the support substrate.

02-24-2011

20120091452

OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

THIN-FILM TRANSISTOR, PROCESS FOR PRODUCTION OF SAME, AND DISPLAY DEVICE EQUIPPED WITH SAME - The present invention provides a thin-film transistor capable of high-speed operation, a process for producing the same, and a display device including the same. The thin-film transistor of the present invention includes, on a substrate, in the order of: a gate electrode; a gate insulating film; an oxide semiconductor film; and a protective insulating film, the protective insulating film having a planar shape that is completely or substantially the same as the planar shape of the gate electrode.

OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms.

OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22.

THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD - A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets.

CIRCUIT BOARD, DISPLAY DEVICE, AND PROCESS FOR PRODUCTION OF CIRCUIT BOARD - The present invention provides a circuit board having excellent productivity, particularly a circuit board having excellent productivity with respect to a semiconductor layer and source layer forming step, a display device, and a process for producing a circuit board. The circuit board of the present invention is a circuit board including an oxide semiconductor layer and an electrode connected to the oxide semiconductor layer, wherein the electrode is formed by essentially laminating a layer made of a metal other than copper and a layer containing copper.

06-05-2014

20140367683

OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

12-18-2014

Patent applications by Yoshimasa Chikama, Osaka-Shi JP

Yoshimasa Chikama, Osaka JP

Patent application number

Description

Published

20100013785

DISPLAY PANEL SUBSTRATE, DISPLAY PANEL, DISPLAY APPRATUS, AND METHOD FOR MANUFACTURING DISPLAY PANEL SUBSTRATE - A display panel substrate according to the present invention includes at least an insulating substrate, first conductive wires formed on the insulating substrate, a piezoelectric material film formed on the first conductive wires, second conductive wires intersecting with the first conductive wires, and a protecting film for protecting the first conductive wires, the second conductive wires, and the piezoelectric material film. The insulating film is formed at least in an area in an effective display area on the insulating substrate. The piezoelectric film is formed at least at an intersection of a first conductive wire and a second conductive wire. This makes it possible to provide a display panel substrate that allows integration of a touch panel function into a display panel without causing an increase in size of the display panel.

01-21-2010

20140083841

THIN FILM-FORMING METHOD - A method of forming a thin-film includes: a normal deposition step of depositing a thin-film on a substrate by performing discharge among a plurality of targets, and by providing an inert gas and a reactive gas into a processing chamber, with a magnet section being reciprocated along a target section formed by these targets; and a discharge starting step of starting a discharge at the target section prior to the normal deposition step, in a state in which a flow ratio of the reactive gas to the inert gas is larger than a flow ratio of the reactive gas to the inert gas in the normal deposition step.

CIRCUIT COMPONENT, ELECTRODE CONNECTION STRUCTURE AND DISPLAY DEVICE INCLUDING THE SAME - An electrode connection structure including a first circuit component including a resin plate, a barrier film stacked on a surface of the resin plate, a circuit section formed on the barrier film and a first electrode provided on the surface of the resin plate on which the barrier film is stacked, and a second circuit component arranged to face the first circuit component and having a second electrode facing the first electrode, wherein the first and second electrodes are electrically connected via pressure applied thereto in the directions approaching each other and a portion of the barrier film surrounding the first electrode is at least partially removed from the surface of the resin plate.