Abstract

We report on the high performance solar-blind AlGaN-based photodetectors that are grown by metal-organic chemical vapor deposition on -plane sapphire substrates. The dark current of the diameter devices was measured to be on the order of for bias voltages up to . The breakdown voltages were higher than . The responsivities of the photodetectors were 0.052 and at under 0 and reverse biases, respectively. We achieved a detectivity of for diameter AlGaN detectors.

Received 01 February 2008Accepted 12 February 2008Published online 10 March 2008

Acknowledgments:

This work is supported by the European Union under the projects EU-NoE-METAMORPHOSE, EU-NoE-PHOREMOST, EU-PHOME, and EU-ECONAM, and TUBITAK under Project Nos. 105E066, 105A005, 106E198, 106A017, and 107A012. One of the authors (E.O.) also acknowledges partial support from the Turkish Academy of Sciences.