BIOGRAPHYDr. Hui Fang is currently a postdoctoral researcher working with Prof. John Rogers at UIUC. Dr. Fang was born in Auhui, China. He received his B.S. from Tsinghua University (Beijing) in 2009 and achieved his Ph.D. with Prof. Ali Javey at University of California, Berkeley in 2014.
His research interests include understanding and controlling the properties of engineered functional nanomaterials while adopting materials innovation for technological applications, including electronics and sensors. He enjoys unraveling new materials science mysteries and seeking optimal solutions for grand technological challenges.
Dr. Fang has authored and co-authored 22 journal papers (total citations: 629, h-index: 12), most of which are published in high impact journals including Nature, Proceedings of the National Academy of Sciences, Nano Letters, Advanced Materials and Journal of the American Chemical Society. He also serves as the reviewer for Nature Communications, ACS Nano, Nano Research, and MRS Proceedings.

Compound Semiconductor on Insulator (XOI) FETs [BPN567]Due to their high mobility, the integration of compound semiconductors on Si has been
actively studied over the past several years. This integration,
however, presents significant challenges. The conventional method of addressing this problem
consists of growth of multiple epilayers of materials to address the
lattice mismatch between Si and the desired semiconductor, leading to highly complex fabrication
techniques. Here we demonstrate high performance compound
semiconductor on insulator (XOI) field effect transistors (FET) consisting of ultra-thin InAs
nanoribbons (NR) on insulator that exhibit performance on par with the
state of the art quantum well FETs. We have performed a detailed study on the transport properties
of these InAs ribbons,
showing that quantum confinement plays a significant role in the electron transport properties. In
detail, the contact
resistance and mobility are heavily affected by the number of sub-bands populated.