Method of stress induced cleaving of semiconductor devices05/28/15 - 20150144968 - A method of dicing semiconductor devices includes depositing a continuous first layer over the substrate, such that the first layer imparts a compressive stress to the substrate, and etching grooves in the first layer to increase local stress at the grooves compared to stress at the remainder of the first...

Method of manufacturing structures of leds or solar cells04/30/15 - 20150115290 - The invention disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer...

Semiconductor light emitting element03/12/15 - 20150069419 - A semiconductor light emitting element include a semiconductor layer in which a first semiconductor layer, a second semiconductor layer, and a light emitting layer that is disposed between the first semiconductor layer and the second semiconductor layer are disposed. The first semiconductor layer has a step portion protruding more outwards...

Tensile separation of a semiconducting stack03/12/15 - 20150069420 - A stressor layer is applied to a semiconducting stack in order to separate the semiconducting stack at a predetermined depth. Tensile force is applied to the stressor layer, fracturing the semiconducting stack at the predetermined depth and allowing the resulting upper portion of the semiconducting stack to be used in...

Method and apparatus for creating a w-mesa street03/05/15 - 20150060888 - A method for fabricating an epitaxial structure includes providing a wafer comprising one or more epitaxial layers. The wafer is divided into dice where the area between the dice are called streets. Each street has a slot formed on either side of the street. The slots penetrate through the epitaxial...

Light emitting device and electronic device03/05/15 - 20150060890 - An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a...

Light emitting diode substrate02/19/15 - 20150048385 - A method of manufacturing a light emitting diode (LED) substrate includes following steps: providing a nano-patterned substrate, which has a plurality of convex portions and a plurality of first concave portions that are spaced apart from each other, wherein each first concave portion has a depth (d1); forming a plurality...

Light-emitting device01/22/15 - 20150021626 - A light-emitting device includes: a layered semiconductor body including an n-type layer, a light-emitting layer, and a p-type layer stacked in sequence; an n-side electrode formed on part of the n-type layer exposed in a via formed in the layered semiconductor body to be non-conductive with the light-emitting layer and...

Growth substrate and light emitting device comprising the same01/01/15 - 20150001556 - A growth substrate including a substrate having a growth surface including a plurality of steps inclining in a first direction; a first layer disposed on the growth surface, the first layer including an A-plane or an M-plane in an upper part thereof, a plurality of protrusions having an inclined surface...

Electroluminescent display panel and method of fabricating the same10/30/14 - 20140319546 - An electroluminescent display panel and method of fabricating the same are provided. The electroluminescent display panel includes a first multiple-layered structural layer, a second multiple-layered structural layer, a passivation layer and a third patterned conductive layer. The first multiple-layered structural layer includes a first patterned conductive layer, a first patterned...

Light emitting diode package10/16/14 - 20140306240 - An exemplary light emitting diode package includes a substrate, a first electrode and a second electrode embedded in the substrate, and a light emitting chip fixed onto the first electrode by first glue. The first electrode has a first barrier member at a periphery of the first glue and below...

Light-emitting device10/16/14 - 20140306241 - In a light-emitting device where reflective electrodes are regularly arranged, occurrence of interference fringes due to reflection of light reflected by the reflective electrode is inhibited. A surface of the reflective electrode of a light-emitting element is provided with a plurality of depressions. The shapes of the plurality of depressions...

Optoelectronic semiconductor structure and method for transporting charge carriers10/09/14 - 20140299892 - An optoelectronic semiconductor structure (20) comprises an n-type semiconductor region (3); a p-type semiconductor region (1); a p-n junction formed between the n-type and p-type semiconductor regions; and an active region (2). According to the present invention, the optoelectronic semiconductor structure (20) is configured to transport, when in use, charge...

Low carbon group-iii nitride crystals09/18/14 - 20140264388 - The present disclosure generally relates to systems and methods for producing and using Group-III nitride crystals that have enhanced or increase ultraviolet transparency in a range of wavelengths. The crystals may also be used in a number of UV optics and UV optical semiconductor devices....

Optoelectronic device and method for manufacturing the same09/18/14 - 20140264390 - A method of fabricating an epitaxial device, comprising: providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first...

Semiconductor device and manufacturing method thereof09/18/14 - 20140264391 - A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film....

Led chip and method for manufacturing the same08/21/14 - 20140231831 - The invention provides a substrate structure used for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure includes a substrate having a first surface and a second surface opposite to the first surface and a plurality of grooving structure formed on the first surface...

Light emitting element07/03/14 - 20140183564 - A light emitting element includes a first conductivity-type semiconductor layer, a first electrode, a second conductivity-type semiconductor layer and a second electrode. The second conductivity-type semiconductor layer has a square peripheral shape. The first electrode includes a first connecting portion on a first diagonal line and a first extending portion...

Display substrate and method of manufacturing the same06/12/14 - 20140159059 - A method of manufacturing a display substrate includes forming a gate insulation layer on the base substrate on which a gate metal pattern, forming a data metal pattern on the gate insulation layer, sequentially forming a insulation layer and an organic layer on the base substrate on which the data...

Protection element and light emitting device using same06/12/14 - 20140159061 - A protective element includes a semiconductor substrate, connecting electrodes, bottom electrodes, and a protection circuit. The connecting electrodes are provided on a mount surface of the semiconductor substrate on which a light-emitting element for flip-chip mounting is mounted so as to be each connected to an electrode of the light-emitting...

Semiconductor device and manufacturing method thereof06/05/14 - 20140151720 - A semiconductor device adapted for being disposed on a substrate is provided. The semiconductor device includes a pixel electrode, a drain, a semiconductor channel layer, a source, a gate insulation layer and a side-gate. The pixel electrode is disposed on the substrate. The drain is disposed on the pixel electrode...

Light-emitting device, lighting device, and electronic device05/22/14 - 20140138711 - It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of...

Light emitting diode and method for manufacturing the same05/22/14 - 20140138712 - A light emitting device is provided, including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes. The first semiconductor layer has a step-down region such that one...

Method for producing an optoelectronic component and component produced in such manner03/06/14 - 20140061676 - A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before...

Light-emitting transistors with improved performance02/27/14 - 20140054613 - Disclosed are light-emitting transistors having novel structures that can lead to enhanced device brightness, specifically, via incorporation of additional electrically insulating components that can favor charge localization and in turn, carrier recombination and exciton formation....

Power light emitting diode and method with uniform current density operation01/30/14 - 20140027789 - A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the...

Semiconductor chip including heat radiation member, and display module01/16/14 - 20140014975 - A semiconductor chip includes a circuit region having an integrated semiconductor circuit on a semiconductor substrate, and a heat radiation member on at least a portion of a scribe lane region configured to at least partially surround the circuit region, the heat radiation member including a plurality of heat radiation...

Optical device and processing method of the same01/16/14 - 20140014976 - An optical device including: a rectangular front side having a light-emitting layer; a rectangular rear side parallel to the front side; and first to fourth lateral sides adapted to connect the front and rear sides, in which the first lateral side is inclined by a first angle with respect to...

Light-emitting device and method for fabricating the same01/09/14 - 20140008668 - To provide a method for fabricating a light-emitting device using flexible glass which is capable of withstanding a process temperature higher than or equal to 500° C., and the light-emitting device. A second substrate is attached to a support substrate using an adsorption layer. The second substrate is bonded to...

Display apparatus and method of manufacturing the same12/19/13 - 20130334543 - A display apparatus includes a display panel, a gate driver, and a data driver. The display panel includes a display area in which an image is displayed and a non-display area disposed adjacent to the display area. The display panel includes an insulating substrate which has a groove. The gate...

Optoelectronic semiconductor chip and method for the production thereof12/12/13 - 20130328066 - An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is...

Semiconductor device and a method of manufacturing the same12/05/13 - 20130320358 - A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor...

Optoelectronic device and method for manufacturing the same11/21/13 - 20130306993 - A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light...

Method of making a light-emitting device and the light-emitting device09/12/13 - 20130234166 - This disclosure discloses a method of making a light-emitting device. The method comprises: providing a light-emitting wafer having an orientation flat portion and comprises a substrate and a light-emitting stack formed on the substrate; forming a first line along a direction which is neither parallel nor perpendicular to the orientation...

Light emitting diode and method for manufacturing the same08/29/13 - 20130221378 - An LED manufacturing method includes the steps of forming a first insulator film on a semiconductor layer, forming a laminated body including a mask layer and an electrode on the first insulator film, forming a second insulator film to cover the laminated body and a first region of the first...

Semiconductor element and manufacturing method thereof08/22/13 - 20130214292 - A manufacturing method of a semiconductor element which can improve productivity and reliability, comprises a step of forming a device structure layer including a semiconductor layer on a first substrate; a step of forming a first metal layer on the device structure layer; a step of forming a second metal...

Optoelectronic semiconductor chip and method for producing same08/01/13 - 20130193450 - An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or...

Light emitting diode and manufacturing method thereof06/27/13 - 20130161652 - A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure...

Light emitting device and method of driving the light emitting device05/23/13 - 20130126912 - A light emitting device that achieves long life, and which is capable of performing high duty ‘drive,’ by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line...

Display device and method for fabricating the same05/16/13 - 20130119408 - An inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder 100 and a buffer section 101....

Solid state light emitting semiconductor device05/09/13 - 20130112998 - A solid state light emitting semiconductor device including a substrate, a mesa epitaxy stacking structure, an insulating layer, a first type electrode and a second type electrode is provided. The mesa epitaxy stacking structure includes a first type semiconductor layer, an active layer and a second type semiconductor layer arranged...

Organic electroluminescent display device and method of fabricating the same05/02/13 - 20130105821 - An organic electroluminescent display device includes a first electrode on a substrate, an organic layer including a light-emitting layer on the first electrode, a second electrode including lower and upper conductive layers sequentially stacked on the organic layer, and an insulating pattern extending into the organic layer through the lower...

Light emitting diode with chamfered top peripheral edge04/25/13 - 20130099254 - A light emitting diode includes a substrate and a light emitting structure. The light emitting structure includes a light outputting surface away from the substrate and a plurality of sidewalls adjoining the light outputting surface. A top peripheral edge interconnecting the light outputting surface and the sidewalls of the light...

Leds and methods for manufacturing the same02/28/13 - 20130049015 - A light emitting diode (LED) is disclosed. The LED includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a patterned structure. The first semiconductor layer having first and second regions is positioned on the substrate, wherein the first region is thicker than the second...

Semiconductor light emitting chip and method for processing substrate02/14/13 - 20130037825 - Disclosed is a semiconductor light emitting chip (20) that is composed of: a substrate (10), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces (25, 26) configured of planes that intersect all the planes equivalent to the M plane of the...

Semiconductor light emitting element01/17/13 - 20130015470 - The semiconductor light emitting device of the present invention includes a semiconductor layer, a first electrode and a second electrode arranged to interpose the semiconductor layer therebetween, an insulating layer provided to the semiconductor layer at the same side as the second electrode and opposite to the first electrodes so...

Electronic device01/03/13 - 20130001594 - A method of making an electronic device comprising a double bank well-defining structure, which method comprises: providing an electronic substrate; depositing a first insulating material on the substrate to form a first insulating layer; depositing a second insulating material on the first insulating layer to form a second insulating layer;...