Abstract

The authors report the calculation of the minority carrier distribution in the base region of the transistor laser (TL) employing the relevant continuity equations and experimental carrier lifetimes, spontaneous and stimulated, extracted from the transistorcharacteristics. A charge control model of the TL is developed, consistent with the short recombination lifetime of the quantum-well base (which competes with the short emitter-to-collector transit time). The absence of carrier-photon resonance of a TL is demonstrated with the bandwidth estimated to be for a long laser cavity length and for a cavity.

Received 01 May 2007Accepted 07 July 2007Published online 30 July 2007

Acknowledgments:

The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nanophotonics Technologies, HUNT Center). One of the authors (N.H., Jr.) is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and another author (M.F.) for the support of the Nick Holonyak, Jr Chair of Electrical and Computer Engineering. The authors thank H. Statz for helpful comments.