How to properly use the external flash memory function on the H8S H8SX?

Question:

I am using the external flash memory write function on the H8S (H8SX). I followed the instructions in the application note for correcting the program to be written to the memory and setting the items in the External Flash memory setting dialog box. However, the following problem occurs and the write can't be executed successfully.

If the program size exceeds the flash memory block size, the write cannot be executed successfully (the program written to the Flash memory will runaway).

No error will be generated while programming.

When I check the contents of the flash memory, the even-numbered blocks (Block 0, Block 2, etc.) have been deleted.

Answer:

These problems may occur when the block address of the word mode indicated on the Flash memory data sheet is input as the top address of block in the [External Flash memory setting] dialog box. Make sure the byte mode block address is input as the top address of block, not the word mode block address.

If only the word mode address is indicated on the Flash memory data sheet, input twice the value of the word mode address (example, if the word mode address is indicated as 1000, input 2000)