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Description/Abstract

It is the purpose of this paper to show expectations, challenges and initial steps concerning the realization of resonant chemical NEMS sensors able to meet the needs of future applications. Here, we focus on the functionalization principles of the sensing Self-Assembled Monolayer (SAM), modeling and simulation of CMOS-SOI resonant NEMS sensor with electrostatic actuation and MOSFET detection, first CMOS-SOI experimental results for making Si nano wire for piezoresistive detection schemes, noise limits of the resonant nano-sensors, challenges for the design of the on-chip readout circuitry, and the specific reliability issues of resonant NEMS. Some of the simulated sensitivity results of about 5 Hz/zg at 433 MHz and MOSFET detection are close to the best state- of- art experimental data from literature of 0.7 Hz/zg at 127 MHz. It is our challenge to pursuit at experimental level with our nanosensor concepts for making reliable nanodevices addressing the needs of integrated sensing.