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Abstract

By adding an etch stop layer and using selectively deposited tungsten as an etch stop in exposed silicon contact regions, borderless contacts are made to silicon at varying depths under an insulator. Contacts made by this technique use minimum area without adding photo-masking steps.

Country

United States

Language

English (United States)

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Process for Borderless Contacts to Silicon

By adding an etch stop layer and using selectively deposited tungsten as an
etch stop in exposed silicon contact regions, borderless contacts are made to
silicon at varying depths under an insulator. Contacts made by this technique
use minimum area without adding photo-masking steps.

Referring to Fig. 1, standard processing is used to form polysilicon line 2 over
insulator 4 on silicon substrate 6 having a diffusion region 8. Next, thick insulator
10 and etch stop layer 12 is deposited over the entire surface. A contact hole
pattern is next defined by normal photo processing. Then etch stop layer 12 is
removed from contact hole regions A and B. Next insulator 10 is anisotropically
etched until polysilicon 2 is exposed. Photo resist (not shown) may then be
removed and tungsten (W) 14 is selectively deposited on exposed silicon.

Referring to Fig. 2, anisotropic contact hole etching through remaining
insulator 10 in contact region A is completed to expose the surface of diffusion 8
in substrate 6, thus completing the cross section shown in Fig. 2. Note that W 14
prevented etching in contact hole B. Contact holes in regions A and B are then
filled with a conductor and integrated circuit wiring is completed by standard
processing methods.