Abstract

We have investigated the optical transitions in single and multiple quantum wells using photovoltaicmeasurements at room temperature. From a theoretical fit to the experimental data, the conduction band offset electron effective mass and band gap energy were estimated. It was found that the is dependent on the indium concentration, but independent on the nitrogen concentration over the range The of GaInNAs is much greater than that of InGaAs with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. Our experimental results for the and of GaInNAs are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized N states.