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Abstract

The two-color recording sensitivity S and the figure of
merit M/# are measured in a reduced and congruent
LiNbO3:In crystal of 2.2-mm thickness. The results are
compared with those before reduction treatment. It is found that
S increases by an order of magnitude through reduction
treatment but the M/# is unchanged. Measured values
for S and M/# in the reduced crystal are
found to be 3 × 10-3 cm/J and 0.04, respectively,
with a total writing intensity of 4.0 W/cm2 at 780 nm and
a gating intensity of 1.15 W/cm2 at 488 nm. These
values are close to those of near-stoichiometric LiNbO3
crystals under similar recording conditions. We also show that
photoconductivity plays an important role in the improvement of
S in LiNbO3:In.

References

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