A read retry function ensures data reliability when using the latest MLC-type NAND flash memory, while an enhanced ECC function allows for the expansion of ECC to 71 bits per 512 byte block. A static-wear leveling algorithm averages the write and erase process over all blocks of the memory area, thus improving the lifespan of installed flash memory.

Other features include:

Power interruption tolerance algorithm

Auto recovery and auto refresh

Data randomizer function

AES 128-bit encryption

SMART (Self-Monitoring & Analysis Reporting Technology) capabilities

TDK will start releasing a number of NAND modules incorporating the new GBDriver RS4 in April 2013. For more information, visit global.tdk.com.