Reports on a study on the dislocation distribution and emission profile of sublimation lateral overgrowth of gallium nitride (GaN) and metalorganic chemical vapor deposition films. Use of transmission electron microscopy and cathodoluminescence; Nature of dislocations in sublimation GaN;...

This letter describes the relationship between the morphological evolution of heteroepitaxial a-plane GaN films and the formation of the extended defect structure. The initial a-plane GaN growth on a-plane SiC substrates (via a high temperature AlN buffer layer) follows a Volmerâ€“Weber...

High resolution x-ray diffraction and optical transmission measurements were performed on neon-implanted metal-organic chemical-vapor deposition-grown GaN thin films, successively annealed at 800 and 1000 Â°C, to study the effect of implantation. Several subsidiary peaks on lower angle side of...