Phase Change Material Memory Device
(31 - 40 of 46 results)

A technique includes, in response to a request to write data to memory cells (140) of a phase change memory device (33), placing the memory cells (140) in a state that is shared in common among the memory cells (140). Also, in response to this request, the data is written to the memory cells (140).

The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of secon ...

A phase change material memory cell (10) may be formed with singulated, cup-shaped phase change material (18). The interior of the cup-shaped phase change material (18) may be filled with a thermal insulating material (22). As a result, heat losses upwardly through the phase change material (18) may ...

A technique includes, in response to a request to write data to memory cells (140) of a phase change memory device (33), placing the memory cells (140) in a state that is shared in common among the memory cells (140). Also, in response to this request, the data is written to the memory cells (140).

A technique includes determining whether a storage level of a phase, change memory cell is within a predefined margin from a resistance threshold. In response to the determination, the cell is selectively written.

A PCM memory device and a method of fabricating the same are provided. The memory device comprises a lower electrode, a dielectric layer, a conductor spacer, an interfacial layer and a PCM layer. The dielectric layer is disposed above the lower electrode and the dielectric layer further comprises an ...

PURPOSE: A method is provided to selectively refresh a memory cell of a phase change material memory device. CONSTITUTION: A computer system(30) includes other components than the memory controller hub(34) and the memory(32). The computer system(30) includes a processor(42) (one or more microprocess ...

A phase change material memory cell (10) may be formed with singulated, cup-shaped phase change material (18). The interior of the cup-shaped phase change material (18) may be filled with a thermal insulating material (22). As a result, heat losses upwardly through the phase change material (18) may ...

A technique includes, in response to a request to write data to memory cells (140) of a phase change memory device (33), placing the memory cells (140) in a state that is shared in common among the memory cells (140). Also, in response to this request, the data is written to the memory cells (140).

PURPOSE: A phase change material memory device and a method for forming the same are provided to reduce the contact area between the conductor and the phase change material layer. CONSTITUTION: A phase change material memory device comprises the first insulating layer(60) which is provided to the to ...