An experimental study has been made of the transport
properties of InAs1-xp-x grown epitaxially from the vapor
phase onto semi-insulating GaAs substrates. The hydrogen
carrier gas flow rate was varied for four sets of
samples of InAs0.16p0.39 with changing thickness between
sets. A fifth set was investigated with varying composition.
Resistivity and Hall effect measurements from
3K to 300K yielded electron mobilities as high as 13,100
2 cm /volt-sec at 77K and electron concentrations from
1.5xl0 16 cm~ 3 to 8xl0
16cm~ 3 at 300K. Transport at low
temperatures (T<30K) is attributed to the formation of
a donor impurity band.