Interband transitions of a series of as-grown AlGaAs/GaAs quantum well structures grown by MOVPE have been studied using photoreflectance to determine their well shape. The transition energies calculated using three different quantum well profiles are compared to those obtained using photoreflectance. The results show that the shape of these structures is best represented by an exponential potential profile.

Interband transitions of a series of as-grown AlGaAs/GaAs quantum well structures grown by MOVPE have been studied using photoreflectance to determine their well shape. The transition energies calculated using three different quantum well profiles are compared to those obtained using photoreflectance. The results show that the shape of these structures is best represented by an exponential potential profile.

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eng

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Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html