GaAs
- Gallium ArsenideWafer Technology offers single crystal
gallium arsenide grown at low pressure from high purity polycrystalline
gallium arsenide in a vertical temperature gradient (VGF-Vertical
Gradient Freeeze).This method produces crystals with a much
lower dislocation density than those produced by any other
growth method.

Wafer Technology also offers GaAs wafers
produced by the High Pressure Liquid Encapsulated Czochralski
(LEC) method. Single crystal ingots are produced using high
purity gallium and arsenic as the starting material