ISSI samples 1 Gb, 2 Gb DDR3 SDRAMs

A family of DDR3 SDRAMs targets applications in automotive, communications, industrial, medical and mil-aerospace. The 1 Gb (IS43TR16640A) and 2 Gb (IS43TR16128A) devices from Integrated Silicon Solution, Inc. (ISSI) feature clock speeds as high as 933 MHz with data rates of up to 1833 MT/s. The modules, which operate on 1.5 V, are available in commercial, industrial, and automotive temperature grades; a 1.35-V device is set to follow.

Key features:

Packages: 96-ball BGA for x16, 78-ball BGA for x8

Bidirectional differential data strobe

Data masking per byte on write commands

Programmable burst length of 4 or 8

Programmable CAS latency

Auto-refresh and self-refresh modes

OCD (driver adjustment)

ODT (on die termination) supported

Write leveling

Samples of the x16 1.5V DDR3 products are going out now with production shipments starting in Q1 2013. Samples of the x8 1.5V and x8/x16 1.35V options will start near year’s end with volume production shipments beginning in Q1 2013. For more information, click here.