Abstract

Spin-dependent tunneling has been shown to occur through as the insulating tunnel barrier. Magnetic tunnel junctions of the type were prepared by oxidizing thin metal layer of Ga in oxygen plasma and characterized. The highest junctionmagnetoresistance observed was 18.2% at room temperature, increasing to 27.6% at 77 K. The average barrier height was estimated to be about 2 eV, as opposed to over 3 eV for junctions with barrier of comparable quality. Otherwise these junctions behave similar to those with This shows the feasibility of obtaining lower resistance junctions with as the barrier for magnetic storage applications.