Abstract

The incorporation efficiency of carbon in GaAs using carbon tetrabromide was studied. A series of carbon-doped GaAs samples were grown at different pressures and V/III ratios using solid sourcemolecular beam epitaxy (SSMBE). The results showed a high carbon incorporation efficiency of ∼30% within the pressure range up to which resulted in carbondoping concentration of up to However, an increase in V/III ratio was found to reduce the carbon incorporation efficiency. Based on our experimental results, a kinetic model was developed to explain the effect of carbon incorporation in GaAs from in SSMBE growth. The model incorporates the effects of different decomposition rates on the As-covered and Ga-covered surface.