Tag / BiCS FLASH

Toshiba has long researched technologies essential for continued progress in NAND flash memory. With BiCS FLASH, a new stacked memory cell architecture, the company has created a 3D structure that will support advances and density enhancements in coming years.

Toshiba Corporation today unveiled the latest generation of its BiCS FLASH three-dimensional flash memory with a stacked cell structure, a 64-layer device that will be first in the world to start sample shipments today. The new device incorporates 3-bit-per-cell (TLC) technology and achieves a 256-gigabit capacity, an advance that underscores the potential of Toshiba’s proprietary architecture.