A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...

A hands-on learning exercise used to illustrate the device physics of a light emitting diode (LED) in a simple resistor circuit. Students explore the photon energy of four LEDs, compare the voltage drop (or forward bias) across the LED, and explain the behavior of the LED under...