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Magnetic Memory Element

Publishing Venue

IBM

Related People

Russell, LA: AUTHOR

Abstract

Switching circuits and storage matrices employing open flux path magnetic bistable elements are constructed in which unwanted electrical and magnetic field coupling between conductors coupling the elements is substantially eliminated.

Country

United States

Language

English (United States)

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Magnetic Memory Element

Switching circuits and storage matrices employing open flux path magnetic
bistable elements are constructed in which unwanted electrical and magnetic
field coupling between conductors coupling the elements is substantially
eliminated.

A magnetic film 10 exhibiting uni-axial anisotropy 11 has a first drive
conductor 12, a second drive conductor 13 and an output conductor 14. Each of
the conductors 12, 13 and 14 is connected at one end to a common terminal 15
and at the other end to individual terminals 16, 17 and 18, respectively. By
energization of the terminals 16 and 17 with a balanced current input, a parallel
field is applied to film 10. Electrical and magnetic coupling of the sense
conductor 14 is eliminated when each of the conductors 12, 13 and 14 is
symmetrically positioned with respect to one another.