Modules using Samsung's latest 3Xnm process are expected later this year

Lower power due to smaller process

DDR3 DRAM has just overtaken DDR2 as
the predominant memory technology used in today's new computers.
Newer RAM has traditionally been more expensive than previous
generations, but DDR3 pricing has gone down over the last few years
due to mass production and die shrinks to smaller process nodes. Not
only does this result
in price cuts, but also lower power consumption and higher
possible speeds.

Samsung just started producing DDR3 on its 40nm
process last year, but is already working on its newest
generational node. The company describes it as being 30nm-class, but
is generally acknowledged as being around 32nm. The process size
refers to the average half-pitch of a memory cell. A smaller die size
means that more dies can fit on a silicon wafer, reducing production
costs. The company estimates the new chips will increase its
cost-efficiency per wafer by sixty percent.

The new 2Gb
chip can be used to create power-efficient 4GB modules operating at
1.35 volts. Samsung expects power savings of 30 percent compared to a
similar chip produced on a 50nm process, with a 4GB module consuming
only three watts per hour when used in a newer-generation notebook.

“Our accelerated development of next generation 30nm-class DRAM
should keep us in the most competitive position in the memory
market,” said Soo-In Cho, President of Samsung Electronics' Memory
Division.

Mass production of the new chips is expected to start in the
second half of the year, with volume ramping up for the busy holiday
shopping season.

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